ONSEMI NTB5605PT4

NTB5605P
Power MOSFET
−60 Volt, −18.5 Amp
P−Channel, D2PAK
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Features
• Designed for Low RDS(on)
• Withstands High Energy in Avalanche and Commutation Modes
• Pb−Free Packages are Available
V(BR)DSS
RDS(on) TYP
ID MAX
−60 V
120 mW @ −5.0 V
−18.5 A
Applications
•
•
•
•
P−Channel
Power Supplies
PWM Motor Control
Converters
Power Management
D
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
S
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
VGS
$20
V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
ID
−18.5
A
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
88
W
IDM
−55
A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VGS = 5.0 V, IPK = 15 A,
L = 3.0 mH, RG = 25 W)
EAS
338
mJ
TL
260
°C
Symbol
Max
Unit
RqJC
1.7
°C/W
Pulsed Drain Current
tp = 10 ms
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
Junction−to−Case (Drain) – Steady State
4
Drain
4
1
THERMAL RESISTANCE RATINGS
Parameter
MARKING DIAGRAM
& PIN ASSIGNMENT
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.41 in2).
2
NTB5605PG
AYWW
3
D2PAK
CASE 418B
STYLE 2
NTB5605P
A
Y
WW
G
1
Gate
2
Drain
3
Source
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping †
NTB5605P
D2PAK
50 Units/Rail
NTB5605PG
D2PAK
50 Units/Rail
Device
(Pb−Free)
NTB5605PT4
NTB5605PT4G
D2PAK
800 Tape & Reel
D2PAK
(Pb−Free)
800 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 2
1
Publication Order Number:
NTB5605P/D
NTB5605P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(Br)DSS
VGS = 0 V, ID = −250 mA
−60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(Br)DSS/TJ
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
−64
mV/°C
VGS = 0 V
TJ = 25°C
−1.0
VDS = −60 V
TJ = 125°C
−10
IGSS
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = −250 mA
Drain−to−Source On Resistance
RDS(on)
Gate−to−Source Leakage Current
V
mA
"100
nA
−1.5
−2.0
V
VGS = −5.0 V, ID = −8.5 A
VGS = −5.0 V, ID = −17 A
120
140
140
mW
gFS
VDS = −10 V, ID = −8.5 A
12
VDS(on)
VGS = −5.0 V, ID = −8.5 A
ON CHARACTERISTICS (Note 3)
Forward Transconductance
Drain−to−Source On Voltage
−1.0
S
−1.3
V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
VGS = 0 V, f = 1.0 MHz,
VDS = −25 V
QG(TOT)
VGS = −5.0 V, VDS = −48 V,
ID = −17 A
730
1190
211
300
67
120
13
22
Gate−to−Source Charge
QGS
4.0
Gate−to−Drain Charge
QGD
7.0
td(on)
12.5
25
122
183
29
58
75
150
TJ = 25°C
−1.55
−2.5
TJ = 125°C
−1.4
pF
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = −5.0 V, VDD = −30 V,
ID = −17 A, RG = 9.1 W
tf
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V
IS = −17 A
V
60
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −17 A
QRR
39
21
0.14
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
nC
NTB5605P
30
VGS = −10 V
VGS = −9 V
VGS = −8 V
VGS = −7 V
25
TJ = 25°C
35
40
VGS = −6 V
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
40
VGS = −5.5 V
VGS = −5 V
VGS = −4.5 V
20
15
VGS = −4 V
10
VGS = −3.5 V
5
VDS = −10 V
TJ = 25°C
30
TJ = 125°C
20
10
VGS = −3 V
0
0
0
2
4
6
8
1
3
5
7
9
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
0
4
6
1
2
3
5
7
8
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.5
VGS = −5.0 V
0.45
0.4
0.35
0.3
TJ = 125°C
0.25
0.2
TJ = 25°C
0.15
0.1
TJ = −55°C
0.05
0
0
5
10
15
20
25
30
−ID, DRAIN CURRENT (AMPS)
0.25
TJ = 25°C
0.225
0.2
0.175
0.15
VGS = −5.0 V
0.125
0.1
VGS = −10 V
0.075
0.05
0.025
0
0
6
3
12
9
15
18
21
24
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
2
1.8
9
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
VGS = 0 V
ID = −8.5 A
VGS = −5.0 V
1.6
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
TJ = −55°C
1.4
1.2
1
0.8
0.6
0.4
TJ = 150°C
1000
TJ = 125°C
100
10
0.2
0
−50
1
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
35
40
45
50
55
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
VDS = 0 V
VGS = 0 V
TJ = 25°C
Ciss
1600
1400
1200
1000
800
Crss
Ciss
600
400
200
Coss
Crss
0
10
5 −VGS 0 −VDS 5
10
15
25
20
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
2400
2200
2000
1800
8
60
7
VDS
6
45
QT
5
VGS
4
3
2
15
ID = −17 A
TJ = 25°C
1
0
0
4
0
16
12
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
20
−IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
8
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
tr
tf
100
td(off)
10
td(on)
VDD = −30 V
ID = −17 A
VGS = −5.0 V
1
10
100
VGS = 0 V
TJ = 25°C
15
10
5
0
0
0.25
1000
VGS = −20 V
SINGLE PULSE
TC = 25°C
100
dc
10 ms
1 ms
100 ms
1
0.1
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
0.75
1
1.25
1.5
1.75
10 ms
10
100
Figure 10. Diode Forward Voltage vs. Current
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
10
0.5
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
30
QDS
QGS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
1
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
NTB5605P
400
ID = −15 A
350
300
250
200
150
100
50
0
25
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
NTB5605P
1
D = 0.5
0.2
0.1
SINGLE PULSE
0.1
0.0001
0.05
0.01
0.001
0.01
0.1
1
t, TIME (s)
Figure 13. Thermal Response
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
Figure 14. Diode Reverse Recovery Waveform
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5
10
NTB5605P
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
C
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
H
M
T B
M
N
R
M
STYLE 2:
PIN 1.
2.
3.
4.
P
U
L
L
M
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTB5605P
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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7
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For additional information, please contact your
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NTB5605P/D