NTJD4158C, NVJD4158C Small Signal MOSFET 30 V/−20 V, +0.25/−0.88 A, Complementary, SC−88 Features • • • • • Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate SC−88 Package for Small Footprint (2 x 2 mm) NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com RDS(on) Typ V(BR)DSS ID Max 1.0 W @ 4.5 V N−Ch 30 V 0.25 A 1.5 W @ 2.5 V 215 mW @ −4.5 V P−Ch −20 V −0.88 A 345 mW @ −2.5 V Applications • • • • DC−DC Conversion Load/Power Management Load Switch Cell Phones, MP3s, Digital Cameras, PDAs SC−88 (SOT−363) (6−Leads) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage N−Ch Symbol Value Unit VDSS 30 V P−Ch Gate−to−Source Voltage N−Ch −20 VGS Steady State P−Channel Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) Steady State Pulsed Drain Current N−Ch P−Ch TA = 25°C TA = 25°C −0.88 TA = 85°C −0.63 tp = 10 ms N−Ch Parameter G1 2 5 G2 D2 3 4 S2 A MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 6 1 0.27 W IDM 0.5 A SC−88 (SOT−363) CASE 419B STYLE 26 XXX MG G 1 S1 G1 D2 −3.0 TJ, Tstg −55 to 150 °C IS 0.25 A XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) −0.48 TL °C 260 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. THERMAL RESISTANCE RATINGS Junction−to−Ambient – Steady State (Note 1) D1 (Top View) PD P−Ch Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 6 V 0.25 0.18 Operating Junction and Storage Temperature Source Current (Body Diode) ID TA = 85°C TA = 25°C 1 ±12 P−Ch N−Channel Continuous Drain Current (Note 1) ±20 S1 Symbol Max Unit RqJA 460 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2015 Febuary, 2015 − Rev. 5 1 Publication Order Number: NTJD4158C/D NTJD4158C, NVJD4158C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol N/P Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ N P N P N P N P N P Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS (Note 3) Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS IGSS VGS = 0 V ID = 250 mA ID = −250 mA V 30 −20 mV/ °C 33 −9.0 VGS = 0 V, VDS = 30 V TJ = 25°C VGS = 0 V, VDS = −16 V VGS = 0 V, VDS = 30 V TJ = 125°C VGS = 0 V, VDS = −16 V VDS = 0 V, VGS = 10 V VDS = 0 V, VGS = −4.5 V 1.0 1.0 mA 1.0 1.0 mA 1.5 V 0.5 0.5 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) Negative Gate Threshold Temperature Coefficient VGS(TH)/ TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS N P N P N P N P N P VGS = VDS ID = 100 mA ID = −250 mA VGS = 4.5 V, ID = 10 mA VGS = −4.5 V, ID = −0.88 A VGS = 2.5 V, ID = 10 mA VGS = −2.5 V, ID = −0.71 A VDS = 3.0 V, ID = 10 mA VDS = −10 V, ID = −0.88 A 0.8 −0.45 1.2 3.2 −2.7 1.0 0.215 1.5 0.345 0.08 3.0 mV/ °C 1.5 0.260 2.5 0.500 W S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD N P N P N P N P N P N P N P VDS = 5.0 V VDS = −20 V VDS = 5.0 V f = 1 MHz, VGS = 0 V VDS = −20 V VDS = 5.0 V VDS = −20 V VGS = 5.0 V, VDS = 24 V, ID = 0.1 A VGS = −4.5 V, VDS = −10 V, ID = −0.88 A VGS = 5.0 V, VDS = 24 V, ID = 0.1 A VGS = −4.5 V, VDS = −10 V, ID = −0.88 A VGS = 5.0 V, VDS = 24 V, ID = 0.1 A VGS = −4.5 V, VDS = −10 V, ID = −0.88 A VGS = 5.0 V, VDS = 24 V, ID = 0.1 A VGS = −4.5 V, VDS = −10 V, ID = −0.88 A 20 155 19 25 7.25 18 0.9 2.2 0.2 0.2 0.3 0.5 0.2 0.65 33 225 32 40 12 30 1.5 3.5 pF nC SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf N VGS = 4.5 V, VDD = 5.0 V, ID = 250 mA, RG = 50 W P VGS = −4.5 V, VDD = −10 V, ID = −0.5 A, RG = 20 W ns 15 66 56 78 5.8 6.5 13.5 3.5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR N P N P N P VGS = 0 V, TJ = 25°C VGS = 0 V, TJ = 125°C VGS = 0 V, dIS/dt = 8.0 A/ms VGS = 0 V, dIS/dt = 100 A/ms 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 IS = 10 mA IS = −0.48 A IS = 10 mA IS = −0.48 A IS = 10 mA IS = −0.48 mA 0.65 −0.8 0.45 −0.66 12.4 10.6 0.7 −1.2 V ns NTJD4158C, NVJD4158C TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 10 V to 2.8 V VGS = 2.6 V 0.16 0.2 TJ = 25°C VDS = 5 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 0.2 0.18 2.2 V 2.4 V 0.14 0.12 0.1 2V 0.08 0.06 0.04 1.8 V 0.15 0.1 0.05 0.02 TJ = −55°C 0 0.25 0.5 0.75 1 1.25 1.5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 1.25 1.5 1.75 2.25 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 0 1.3 VGS = 4.5 V 1.2 TJ = 125°C 1.1 1.0 0.9 TJ = 25°C 0.8 0.7 0.6 TJ = −55°C 0.5 0.4 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 TJ = 25°C 2.0 VGS = 2.5 V 1.5 1.0 VGS = 4 V 0.5 0 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2 1.75 2.5 2.5 Figure 3. On−Resistance vs. Drain Current and Temperature 1000 ID = 0.01 A VGS = 4.5 V VGS = 0 V 1.5 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 25°C TJ = 125°C 1.25 1 0.75 0.5 TJ = 150°C 100 TJ = 125°C 0.25 0 −50 10 −25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (°C) 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTJD4158C, NVJD4158C C, CAPACITANCE (pF) 50 VDS = 0 V 40 Ciss 30 Crss VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) TJ = 25°C VGS = 0 V 20 Ciss Coss 10 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 5 QG 4 3 QGS 2 1 ID = 0.1 A TJ = 25°C 0 0 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.4 0.8 0.2 0.6 QG, TOTAL GATE CHARGE (nC) 1 Figure 8. Gate−to−Source Voltage vs. Total Gate Charge Figure 7. Capacitance Variation 1000 0.1 100 IS, SOURCE CURRENT (AMPS) VDD = 5.0 V ID = 0.25 A VGS = 4.5 V t, TIME (ns) QGD tf tr td(off) td(on) 10 1 10 VGS = 0 V TJ = 25°C 0.08 0.06 0.04 0.02 0 0.5 100 0.55 0.6 0.65 0.7 0.75 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (OHMS) Figure 10. Diode Forward Voltage vs. Current Figure 9. Resistive Switching Time Variation vs. Gate Resistance www.onsemi.com 4 NTJD4158C, NVJD4158C TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1 1 TJ = 25°C −2 V −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) VGS = −4.5, −3.5 & −2.5 V −1.75 V 0.75 0.5 −1.5 V 0.25 −1.25 V −1 V 0 0.4 0 0.8 0.8 0.7 0.6 0.5 0.4 125°C 0.3 0.2 25°C 0.1 TJ = −55°C 0 1.6 1.2 VDS ≥ −20 V 0.9 2 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.3 VGS = −4.5 V TJ = 125°C 0.25 0.2 TJ = 25°C 0.15 TJ = −55°C 0.1 0 0.25 0.5 1 0.75 −ID, DRAIN CURRENT (AMPS) 0.5 TJ = 25°C 0.4 VGS = −2.5 V 0.3 VGS = −4.5 V 0.2 0.1 0 0.4 0.7 0.8 0.9 1 10000 VGS = 0 V ID = −0.88 A VGS = −4.5 V −IDSS, LEAKAGE CURRENT (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.6 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 1.6 1.4 TJ = 150°C 1000 1.2 1.0 0.8 0.6 0.4 0.2 0 −50 0.5 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature 1.8 0.5 1 1.5 2 2.5 3 3.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TJ = 125°C 100 10 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) 5 15 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage 0 www.onsemi.com 5 20 NTJD4158C, NVJD4158C −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 350 VDS = 0 V Ciss VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 300 250 Crss 200 150 100 50 Coss 0 10 5 VGS 0 VDS 5 15 10 20 5 QT 4 3 Q1 1 ID = −0.88 A TJ = 25°C 0 0 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.4 0.8 1.2 1.6 Qg, TOTAL GATE CHARGE (nC) 2 Figure 8. Gate−to−Source Voltage vs. Total Gate Charge Figure 7. Capacitance Variation 100 0.5 −IS, SOURCE CURRENT (AMPS) t, TIME (ns) Q2 2 td(off) tr 10 td(on) VDD = −10 V ID = −0.8 A VGS = −4.5 V tf 1 VGS = 0 V TJ = 25°C 0.4 0.3 0.2 0.1 0 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current ORDERING INFORMATION Device Marking NTJD4158CT1G TCD NTJD4158CT2G TCD NVJD4158CT1G* VCD Package Shipping† SC−88 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 6 NTJD4158C, NVJD4158C PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D H A D 6 5 GAGE PLANE 4 L L2 E1 E 1 2 DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. e B 6X ddd TOP VIEW DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd b C A-B D M A2 DETAIL A A 6X ccc C A1 C SIDE VIEW SEATING PLANE c MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 END VIEW RECOMMENDED SOLDERING FOOTPRINT* 6X 6X 0.30 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTJD4158C/D