NVJS4151P Trench Power MOSFET −20 V, −4.1 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS(ON) Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6 Gate Diodes for ESD Protection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) Typ ID Max 55 mW @ −4.5 V −20 V −4.1 A 70 mW @ −2.5 V 180 mW @ −1.8 V Applications SC−88 (SOT−363) • High Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs D 1 6 D D 2 5 D G 3 4 S MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±12 V ID −3.2 A Continuous Drain Current (Note 1) Steady State TA = 25 °C TA = 85 °C −2.3 t≤5s TA = 25 °C −4.1 Steady State TA = 25 °C PD 1.2 W tp = 10 ms IDM −13 A TJ, TSTG −55 to 150 °C IS −0.8 A TL 260 °C ESD 4000 V Symbol Max Unit Junction−to−Ambient – Steady State RqJA 125 °C/W Junction−to−Ambient − t ≤ 5 s RqJA 75 Junction−to−Lead – Steady State RqJL 45 Power Dissipation (Note 1) Pulsed Drain Current Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) Human Body Model (HBM) THERMAL RESISTANCE RATINGS (Note 1) Parameter © Semiconductor Components Industries, LLC, 2014 D S 6 1 VTY M G G SC−88/SOT−363 CASE 419B 1 D VTY M G D G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). August, 2014 − Rev. 1 MARKING DIAGRAM & PIN ASSIGNMENT D Operating Junction and Storage Temperature ESD Top View 1 Device Package Shipping† NVJS4151PT1G SC−88 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NVJS4151P/D NVJS4151P ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS −20 VGS = 0 V, ID = −250 mA VGS = −16 V, VDS = 0 V V −12 mV/°C TJ = 25°C −1.0 TJ = 85°C −5.0 mA VDS = 0 V, VGS = ±4.5 V ±1.5 mA VDS = 0 V, VGS = ±12 V ±10 mA −1.2 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) −0.40 Negative Threshold Temperature Coefficient VGS(TH)/TJ VGS = VDS, ID = −250 mA 4.0 Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −2.9 A 55 67 VGS = −2.5 V, ID = −2.4 A 70 85 VGS = −1.8 V, ID = −1.0 A 180 205 VGS = −10 V, ID = −3.3 A 12 S 850 pF Forward Transconductance gFS mV/°C mW CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge VGS = 0 V, f = 1.0 MHz, VDS = −10 V QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 160 110 nC 10 VGS = −4.5 V, VDS = −10 V, ID = −3.3 A 1.5 2.8 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time td(ON) 0.85 tr 1.7 td(OFF) Fall Time VGS = −4.5 V, VDD = −10 V, ID = −1.0 A, RG = 6.0 W tf ms 2.7 4.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Ta Discharge Time Tb Reverse Recovery Charge VGS = 0 V, IS = −1.3 A, TJ = 25°C −0.75 63 VGS = 0 V, dIS/dt = 100 A/ms, IS = −1.3 A QRR −1.2 V ns 9.0 54 0.23 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NVJS4151P TYPICAL ELECTRICAL CHARACTERISTICS 5 VDS w −10 V VGS = −2.4 V VGS = −2.0 V 3 −ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) 4 VGS = −1.6 V VGS = −2.8 V to 6.0 V . 2 VGS = −1.4 V 1 VGS = −1.0 V 0 2 4 6 2 1 0 1 2 3 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. On−Region Characteristics ID = −3.3 A TJ = 25°C 0.4 0.3 0.2 0.1 0 0 2 4 6 0.6 TJ = 25°C 0.5 0.4 VGS = −1.8 V 0.3 0.2 0.1 VGS = −2.5 V VGS = −4.5 V 0 1 2 3 4 5 −VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 100000 1.7 VGS = −4.5 V ID = −2.9 A VGS = 0 V −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3 0 8 0.5 1.5 4 VGS = −1.2 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C VGS = −1.8 V TJ = 150°C 10000 1.3 1.1 0.9 1000 100 0.7 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 0 4 8 12 16 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 20 NVJS4151P VGS = 0 V TJ = 25°C 1000 CISS 750 500 250 0 0 4 8 12 16 5 15 QT 4 VGS VDS 3 12 9 2 6 Qgs Qgd ID = −3.3 A TJ = 25°C 1 0 0 20 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 1250 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS 2 4 6 8 10 3 0 12 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 10000 3 −IS, SOURCE CURRENT (A) tf t, TIME (ns) td(off) tr 1000 td(on) 100 1 10 100 VGS = 0 V TJ = 25°C 2.5 2 1.5 1 0.5 0 0.4 0.5 0.6 0.7 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 0.9 NVJS4151P PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X ddd M A2 A ccc C DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd b TOP VIEW 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. A1 C SIDE VIEW C A-B D DETAIL A SEATING PLANE END VIEW c MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 RECOMMENDED SOLDERING FOOTPRINT* 6X 6X 0.30 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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