MMBZ27VAW D

MMBZxxVAWT1G Series,
SZMMBZxxVAWT1G Series
40 Watt Peak Power
Zener Transient Voltage
Suppressors
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SC−70 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
SC−70
CASE 419
STYLE 4
CATHODE 1
Features
 SC−70 Package Allows Either Two Separate Unidirectional









3 ANODE
CATHODE 2
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range
Standard Zener Breakdown Voltage Range: 15 − 33 V
Peak Power − 40 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
Low Leakage < 5.0 mA
Flammability Rating UL 94 V−0
AEC−Q101 Qualified and PPAP Capable − SZMMBZxxVAWT1G
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These are Pb−Free Devices*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
MARKING DIAGRAM
XX MG
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MMBZxxVAWT1G
SC−70
(Pb−Free)
3,000 /
Tape & Reel
SZMMBZxxVAWT1G
SC−70
(Pb−Free)
3,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
Use the Device Number to order the 7 inch/3,000 unit reel.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 4
1
Publication Order Number:
MMBZ27VAW/D
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series
MAXIMUM RATINGS
Rating
Symbol
Peak Power Dissipation @ 1.0 ms (Note 1)
@ TL  25C
Ppk
Total Power Dissipation on FR−5 Board (Note 2)
@ TA = 25C
Derate above 25C
PD
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature Range
Value
Unit
W
40
200
1.6

mW
mW/C
RqJA
618
C/W
TJ, Tstg
− 55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non−repetitive current pulse per Figure 5 and derate above TA = 25C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
I
IF
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
VC VBR VRWM
Test Current
QVBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
V
IR VF
IT
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
VC @ IPP (Note 4)
Breakdown Voltage
Device
Marking
VRWM
IR @
VRWM
Volts
nA
Min
Nom
Max
mA
MMBZ15VAWT1G
AT
12
50
14.25
15
15.75
1.0
MMBZ20VAWT1G
AU
17
50
19.00
20
21.00
1.0
MMBZ27VAWT1G
AA
22
50
25.65
27
28.35
1.0
MMBZ33VAWT1G
AV
26
50
31.35
33
34.65
1.0
Device*
VBR (Note 3) (V)
3. VBR measured at pulse test current IT at an ambient temperature of 25C.
4. Surge current waveform per Figure 5 and derate per Figure 6
*Include SZ-prefix devices where applicable.
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2
@ IT
VC
IPP
QVBR
V
A
mV/5C
21
1.9
12.3
28
1.4
17.2
40
1.0
24.3
46
0.87
30.4
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series
TYPICAL CHARACTERISTICS
1000
15
100
12
10
IR (nA)
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ IT)
18
9
1
6
0.1
3
0
−40
0
+ 50
+ 100
TEMPERATURE (C)
+ 150
0.01
−40
Figure 1. Typical Breakdown Voltage
versus Temperature
+ 85
+ 25
TEMPERATURE (C)
+ 125
Figure 2. Typical Leakage Current
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
320
PD, POWER DISSIPATION (mW)
300
C, CAPACITANCE (pF)
280
240
200
5.6 V
160
120
15 V
80
40
0
0
1
2
250
200
150
100
FR−5 BOARD
50
0
3
ALUMINA SUBSTRATE
0
BIAS (V)
Figure 3. Typical Capacitance versus Bias Voltage
25
50
75
100
125
TEMPERATURE (C)
150
175
Figure 4. Steady State Power Derating Curve
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
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3
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
tr  10 ms
100
VALUE (%)
PEAK VALUE − IPP
IPP
HALF VALUE −
2
50
tP
0
0
1
2
3
t, TIME (ms)
4
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ TA = 25C
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
0
25
Figure 5. Pulse Waveform
RECTANGULAR
WAVEFORM, TA = 25C
Ppk, PEAK SURGE POWER (W)
Ppk, PEAK SURGE POWER (W)
Figure 6. Pulse Derating Curve
BIDIRECTIONAL
1
200
100
100
10
50
75
100
125
150 175
TA, AMBIENT TEMPERATURE (C)
UNIDIRECTIONAL
0.1
1
10
100
RECTANGULAR
WAVEFORM, TA = 25C
BIDIRECTIONAL
10
UNIDIRECTIONAL
1
1000
0.1
1
10
100
PW, PULSE WIDTH (ms)
PW, PULSE WIDTH (ms)
Figure 7. Maximum Non−repetitive Surge
Power, Ppk versus PW
Figure 8. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
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4
1000
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
L
A1
MIN
0.80
0.00
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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5
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For additional information, please contact your local
Sales Representative
MMBZ27VAW/D