MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SC−70 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. SC−70 CASE 419 STYLE 4 CATHODE 1 Features SC−70 Package Allows Either Two Separate Unidirectional 3 ANODE CATHODE 2 Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range Standard Zener Breakdown Voltage Range: 15 − 33 V Peak Power − 40 W @ 1.0 ms (Unidirectional), per Figure 5 Waveform ESD Rating: − Class 3B (> 16 kV) per the Human Body Model − Class C (> 400 V) per the Machine Model Low Leakage < 5.0 mA Flammability Rating UL 94 V−0 AEC−Q101 Qualified and PPAP Capable − SZMMBZxxVAWT1G SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These are Pb−Free Devices* Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MMBZxxVAWT1G SC−70 (Pb−Free) 3,000 / Tape & Reel SZMMBZxxVAWT1G SC−70 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Use the Device Number to order the 7 inch/3,000 unit reel. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 4 1 Publication Order Number: MMBZ27VAW/D MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series MAXIMUM RATINGS Rating Symbol Peak Power Dissipation @ 1.0 ms (Note 1) @ TL 25C Ppk Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25C Derate above 25C PD Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Range Value Unit W 40 200 1.6 mW mW/C RqJA 618 C/W TJ, Tstg − 55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non−repetitive current pulse per Figure 5 and derate above TA = 25C per Figure 6. 2. FR−5 = 1.0 x 0.75 x 0.62 in. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR I IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT VC VBR VRWM Test Current QVBR Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK V IR VF IT IPP Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) VC @ IPP (Note 4) Breakdown Voltage Device Marking VRWM IR @ VRWM Volts nA Min Nom Max mA MMBZ15VAWT1G AT 12 50 14.25 15 15.75 1.0 MMBZ20VAWT1G AU 17 50 19.00 20 21.00 1.0 MMBZ27VAWT1G AA 22 50 25.65 27 28.35 1.0 MMBZ33VAWT1G AV 26 50 31.35 33 34.65 1.0 Device* VBR (Note 3) (V) 3. VBR measured at pulse test current IT at an ambient temperature of 25C. 4. Surge current waveform per Figure 5 and derate per Figure 6 *Include SZ-prefix devices where applicable. http://onsemi.com 2 @ IT VC IPP QVBR V A mV/5C 21 1.9 12.3 28 1.4 17.2 40 1.0 24.3 46 0.87 30.4 MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series TYPICAL CHARACTERISTICS 1000 15 100 12 10 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VBR @ IT) 18 9 1 6 0.1 3 0 −40 0 + 50 + 100 TEMPERATURE (C) + 150 0.01 −40 Figure 1. Typical Breakdown Voltage versus Temperature + 85 + 25 TEMPERATURE (C) + 125 Figure 2. Typical Leakage Current versus Temperature (Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) 320 PD, POWER DISSIPATION (mW) 300 C, CAPACITANCE (pF) 280 240 200 5.6 V 160 120 15 V 80 40 0 0 1 2 250 200 150 100 FR−5 BOARD 50 0 3 ALUMINA SUBSTRATE 0 BIAS (V) Figure 3. Typical Capacitance versus Bias Voltage 25 50 75 100 125 TEMPERATURE (C) 150 175 Figure 4. Steady State Power Derating Curve (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) http://onsemi.com 3 MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr 10 ms 100 VALUE (%) PEAK VALUE − IPP IPP HALF VALUE − 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25C TYPICAL CHARACTERISTICS 100 90 80 70 60 50 40 30 20 10 0 0 25 Figure 5. Pulse Waveform RECTANGULAR WAVEFORM, TA = 25C Ppk, PEAK SURGE POWER (W) Ppk, PEAK SURGE POWER (W) Figure 6. Pulse Derating Curve BIDIRECTIONAL 1 200 100 100 10 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) UNIDIRECTIONAL 0.1 1 10 100 RECTANGULAR WAVEFORM, TA = 25C BIDIRECTIONAL 10 UNIDIRECTIONAL 1 1000 0.1 1 10 100 PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms) Figure 7. Maximum Non−repetitive Surge Power, Ppk versus PW Figure 8. Maximum Non−repetitive Surge Power, Ppk(NOM) versus PW Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). http://onsemi.com 4 1000 MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) c A2 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE L A1 MIN 0.80 0.00 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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