MMBZ16V, SZMMBZ16V 40 Watt Peak Power Zener Transient Voltage Suppressors SOT−23 Dual Common Anode Zeners for ESD Protection http://onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Features • SOT−23 Package Allows Either Two Separate Unidirectional • • • • • • • • • Configurations or a Single Bidirectional Configuration Standard Zener Breakdown Voltage Range − 15.2 V to 16.80 V Peak Power − 40 W @ 1.0 ms (Unidirectional), per Figure 5 Waveform ESD Rating: − Class 3B (> 16 kV) per the Human Body Model − Class C (> 400 V) per the Machine Model ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge Maximum Clamping Voltage @ Peak Pulse Current Low Leakage < 5.0 mA Flammability Rating UL 94 V−0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device SOT−23 CASE 318 STYLE 12 CATHODE 1 3 ANODE CATHODE 2 MARKING DIAGRAM XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 0 1 Publication Order Number: MMBZ16VAL/D MMBZ16V, SZMMBZ16V MAXIMUM RATINGS Symbol Value Unit Peak Power Dissipation @ 1.0 ms (Note 1) Rating Ppk 40 W Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C °PD° 225 1.8 mW° mW/°C Thermal Resistance Junction−to−Ambient RqJA 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C °PD° 300 2.4 °mW mW/°C Thermal Resistance Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6. 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ORDERING INFORMATION Device Marking MMBZ16VALT1G 16A SZMMBZ16VALT1G* 16A MMBZ16VTALT1G 16T SZMMBZ16VTALT1G* 16T Package Shipping† SOT−23 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 2 MMBZ16V, SZMMBZ16V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol I IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT VC VBR VRWM QVBR V IR VF IT Test Current Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IPP Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS Device* MMBZ16VALT1G Device Marking 16A Breakdown Voltage VRWM IR @ VRWM Volts nA Min Nom 13 50 15.20 16 VC @ IPP (Note 5) @ IT VC IPP QVBR Max mA V A mV/5C 16.80 1.0 23 1.7 13.8 VBR (Note 4) (V) (VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS Device* MMBZ16VTALT1G Device Marking 16T Breakdown Voltage VC @ IPP (Note 5) VRWM IR @ VRWM @ IT VC IPP QVBR Volts nA Min Nom Max mA V A mV/5C 13 50 15.68 16 16.32 1.0 23 1.7 13.8 VBR (Note 4) (V) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. Surge current waveform per Figure 5 and derate per Figure 6 * Include SZ-prefix devices where applicable. http://onsemi.com 3 MMBZ16V, SZMMBZ16V TYPICAL CHARACTERISTICS 1000 18 100 15 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VBR @ IT) 21 12 9 10 1 6 0.1 3 0 −40 0 + 50 + 100 TEMPERATURE (°C) 0.01 −40 + 150 Figure 1. Typical Breakdown Voltage versus Temperature + 85 + 25 TEMPERATURE (°C) + 125 Figure 2. Typical Leakage Current versus Temperature (Upper curve is for bidirectional mode, lower curve is for unidirectional mode) 300 PD, POWER DISSIPATION (mW) 90 C, CAPACITANCE (pF) 80 70 60 50 40 30 20 10 250 ALUMINA SUBSTRATE 200 150 100 FR−5 BOARD 50 0 0 BIAS (V) 75 100 125 TEMPERATURE (°C) Figure 3. Typical Capacitance versus Bias Voltage Figure 4. Steady State Power Derating Curve 0 1 2 0 3 (Upper curve is for unidirectional mode, lower curve is for bidirectional mode) http://onsemi.com 4 25 50 150 175 MMBZ16V, SZMMBZ16V PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. tr ≤ 10 ms VALUE (%) 100 PEAK VALUE − IPP IPP HALF VALUE − 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25°C TYPICAL CHARACTERISTICS 100 90 80 70 60 50 40 30 20 10 0 0 25 Figure 5. Pulse Waveform 100 Ppk, PEAK SURGE POWER (W) Ppk, PEAK SURGE POWER (W) RECTANGULAR WAVEFORM, TA = 25°C BIDIRECTIONAL 1 200 Figure 6. Pulse Derating Curve 100 10 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) UNIDIRECTIONAL RECTANGULAR WAVEFORM, TA = 25°C BIDIRECTIONAL 10 UNIDIRECTIONAL 1 0.1 1 10 100 1000 0.1 1 10 100 PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms) Figure 7. Maximum Non−repetitive Surge Power, Ppk versus PW Figure 8. Maximum Non−repetitive Surge Power, Ppk(NOM) versus PW Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). http://onsemi.com 5 1000 MMBZ16V, SZMMBZ16V TYPICAL COMMON ANODE APPLICATIONS A dual junction common anode design in a SOT−23 package protects two separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND SZMMBZ16VALT1G Thru SZMMBZ16VTALT1G Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS SZMMBZ16VALT1G Thru SZMMBZ16VTALT1G CPU I/O CLOCK CONTROL BUS GND SZMMBZ16VALT1G Thru SZMMBZ16VTALT1G http://onsemi.com 6 MMBZ16V, SZMMBZ16V PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBZ16VAL/D