NZL5V6ATT1 SC75 Dual Common Anode Zener for ESD Protection This dual monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its dual junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. http://onsemi.com CATHODE 1 3 ANODE 2 CATHODE Specification Features • • • • • • SC−75 Package Allows Two Separate Unidirectional Configurations Low Leakage < 1 mA @ 3 V Breakdown Voltage: 5.3 − 5.9 V @ 1 mA Low Capacitance (40 pF typical between terminals) ESD Protection Meeting IEC61000−4−2 Pb−Free Package is Available MARKING DIAGRAM 3 1 2 56 M G G SC−75 CASE 463 STYLE 4 1 Mechanical Characteristics • • • • Void Free, Transfer−Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications 56 M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NZL5V6ATT1 NZL5V6ATT1G Package Shipping† SC−75 3000/Tape & Reel SC−75 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 3 1 Publication Order Number: NZL5V6ATT1/D NZL5V6ATT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3, or 2 and 3) Parameter Symbol I IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT QVBR IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VC VBR VRWM Breakdown Voltage @ IT V IR VF IT Test Current Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IPP Uni−Directional TVS MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Steady State Power − 1 Diode (Note 1) Maximum Junction Temperature Operating Junction and Storage Temperature Range ESD Discharge IEC61000−4−2, Air Discharge IEC61000−4−2, Contact Discharge Lead Solder Temperature (10 seconds duration) Symbol Value Unit PD 150 mW TJmax 150 °C TJ Tstg −55 to +150 °C VPP "15 "8 kV TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR−4 board with min pad. ELECTRICAL CHARACTERISTICS Breakdown Voltage VBR @ 1 mA (V) Leakage Current IRM @ VRM = 3.0 V VC @ IPP (Note 2) Typical Capacitance @ 0 V Bias @ 1 MHz Max VF @ IF = 10 mA Device Min Nom Max (mA) VC (V) IPP (A) (pF) (V) NZL5V6 5.3 5.6 5.9 1.0 9.97 6.11 40 1.25 2. Surge current waveform per Figure 2 and clamping voltage (VC) per Figure 6. http://onsemi.com 2 NZL5V6ATT1 100 % OF PEAK PULSE CURRENT PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 TEMPERATURE (°C) 150 PULSE WIDTH (tp) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tp 20 10 0 175 PEAK VALUE IRSM @ 8 ms tr 90 0 20 Figure 1. Steady State Power Derating Curve TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY PPK, PEAK POWER (W) NOTE: Non−Repetitive Surge 10 100 tp, PULSE WIDTH (ms) 40 35 30 25 20 15 10 5 0 1000 0 0.5 1 Figure 3. Pulse Rating Curve 1.5 2 2.5 3 3.5 BIAS VOLTAGE (V) 4 5 4.5 Figure 4. Capacitance 11 VC, CLAMPING VOLTAGE (V) 1 IF, FORWARD CURRENT (A) 80 45 10 0.1 0.01 0.001 60 Figure 2. 8 X 20 ms Pulse Waveform 100 1 40 t, TIME (ms) 0.6 0.7 0.8 0.9 1.1 1.2 1 VF, FORWARD VOLTAGE (V) 1.3 10 9 8 7 6 5 1.0 1.4 Figure 5. Forward Current versus Forward Voltage 2.0 3.0 4.0 5.0 6.0 IPP, PEAK PULSE CURRENT (A) 7.0 Figure 6. Clamping Voltage versus Peak Pulse Current (8 x 20 ms Pulse) http://onsemi.com 3 NZL5V6ATT1 PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D HE C 0.20 (0.008) E INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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