IPB029N06N3 G Data Sheet (478 KB)

IPB029N06N3 G
Ie\Q
IPI032N06N3 G
IPP032N06N3 G
™
"%&$!"# 3 Power-Transistor
Product Summary
Features
V 9H
Q #451<6? B8978 6B5AE5>3 I CG9D389
>7 1>4 CI>3 B53 R , ? >=1H , &
Q ( @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC
I9
.(
J
*&1
Y"
)*(
6
Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI <? G ? >B5C9CD
1>3 5 + 9H"[Z#
Q ' 3 81>>5< >? B=1<<5F5<
Q 1F1<1>3 85 D5CD
54
Q ) 2 6B55 @<1D
9>7 + ? " , 3 ? =@<91>D
Q * E1<96954 13 3 ? B49>7 D? $ )#
6? BD1B75D1@@<9
3 1D9? >C
Q" 1<? 75>6B55 13 3 ? B49
>7 D? # Type
#) ' ' !
#) # ' ' !
#) ) ' ' !
Package
E=%ID*.+%+
E=%ID*.*%+
E=%ID**(%+
Marking
(*1C(.C
(+*C(.C
(+*C(.C
Maximum ratings, 1DT V T E><5CC ? D85BG9C5 C@53 9
6954
Parameter
Symbol Conditions
? >D
9>E? EC 4B
19> 3 EBB5>D
I9
T 8 T
*#
Value
)*(
T 8 T
)*(
Unit
6
) E<C54 4B19> 3 EBB5>D+#
I 9$\aX_Q
T 8 T
,0(
F1<1>3 85 5>5B7I C9
>7<5 @E<C5
E 6H
I 9 R =H "
*+-
Y@
!1D5 C? EB35 F? <D175
V =H
q*(
J
) ? G5B49CC9@1D9? >
P `[`
)00
K
( @5B1D9>7 1>4 CD? B
175 D5=@5B1DEB5
T V T _`S
T
T 8 T
# 3 <9=1D
93 3 1D57? BI #' # )#
*#
+#
,#
+ 5F
$ , - 1>4 $ , EB
B
5>D9C <9=9D54 2 I 2 ? >4G9B
5 G9D8 1>R `T@8 % / D
85 3 89
@ 9C 12 <5 D? 3 1B
B
I , 55 69SEB
5 6? B=? B
5 45D
19
<54 9
>6? B
=1D9? Z
, 55 697EB
5 6? B=? B
5 45D
19<54 9>6? B
=1D
9? >
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
(&0
=9>9
=1<6? ? D@B9>D
3 =V 3 ? ? <9>7 1B51 -#
%
%
,(
.(
%
%
Thermal characteristics
-85B=1<B5C9
CD1>3 5 :E>3 D9
? > 3 1C5
R `T@8
-85B=1<B5C9
CD1>3 5
R `T@6
:E>3 D
9? > 1=2 9
5>D
A'K
Electrical characteristics, 1DT V T E><5CC ? D85BG9C5 C@53 96954
Static characteristics
B19>C? EB35 2 B51;4? G> F? <D175
V "7G#9HH V =H . I 9 =
!1D5 D8B5C8? <4 F? <D175
V =H"`T#
V 9H4V =H I 9 W
*
+
,
05B? 71D5 F? <D175 4B
19> 3 EBB5>D
I 9HH
V 9H . V =H . T V T
%
(&)
*
V 9H . V =H . T V T
%
*(
*((
J
s6
!1D5C? EB35 <51;175 3 EBB5>D
I =HH
V =H . V 9H .
%
)
)((
Z6
B19>C? EB35 ? >CD1D5 B5C9CD1>3 5
R 9H"[Z#
V =H . I 9 %
*&.
+&*
Y"
V =H . I 9 "HB9#
%
*&+
*&1
%
)&+
%
"
/-
),1
%
H
!1D5 B5C9CD
1>3 5
R=
I^MZ_O[ZPaO`MZOQ
g R_
-#
5F935 ? > == H == H == 5@? HI ) 3 ? >>53 D
9? >
) 9C F5B
D931<9> CD
9<<19B
+ 5F
gV 9Hg5*gI 9gR 9H"[Z#YMd
I 9 + G9D8 3 =* ? >5 <1I5B
W= D
893; 3 ? @@5B1B
51 6? B4B
19>
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
)((((
)+((( \<
%
**((
*1((
Dynamic characteristics
#>@ED3 1@13 9D1>3 5
C U__
V =H . V 9H . f & " J
( ED@ED3 1@13 9
D1>3 5
C [__
+ 5F5BC5 DB1>C65B3 1@13 9D1>3 5
C ^__
%
/+
%
-EB>? > 45<1I D9=5
t P"[Z#
%
+-
%
+ 9C5 D9
=5
t^
%
)*(
%
-EB>? 6645<1I D9=5
t P"[RR#
%
.*
%
tR
%
*(
%
!1D5 D? C? EB35 3 81B75
Q S_
%
-+
%
!1D5 D? 4B19> 3 81B75
Q SP
%
))
%
%
++
%
1<<D9
=5
V 99 . V =H . I 9 R = "
Z_
!1D5 81BS5 81B13 D5B9
CD
93C.#
V 99 . I 9 V =H D? .
Z8
, G9D389
>7 3 81B75
Q _c
!1D5 3 81B75 D? D
1<
QS
%
)*,
).-
!1D5 @<1D51E F? <D
175
V \XM`QMa
%
-&*
%
( ED@ED3 81B75
Q [__
%
)((
)+,
Z8
%
%
)*(
6
%
%
,0(
%
)&(
)&*
J
%
-1
%
Z_
%
0*
%
Z8
V 99 . V =H .
J
Reverse Diode
9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB
5>D
IH
9? 45 @E<C5 3 EBB
5>D
I H$\aX_Q
9? 45 6? BG1B4 F? <D175
V H9
+ 5F5BC5 B53 ? F5BI D9
=5
t ^^
+ 5F5BC5 B53 ? F5BI 3 81B
75
Q ^^
.#
+ 5F
T 8 T
V =H . I < T V T
JG . #< PU<4D WC
, 55 697EB
5 6? B71D5 3 81B
75 @1B1=5D5B4569>9D
9? >
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
1 Power dissipation
2 Drain current
P `[`4R"T 8#
I 94R"T 8 V =H" .
200
140
120
150
80
I D [A]
P tot [W]
100
100
60
40
50
20
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94R"V 9H T 8 T D 4(
Z `T@84R"t \#
@1B1=5D5B t \
@1B1=5D5B
D 4t \'T
103
100
WC
<9=9D
54 2 I ? >CD1D
5
^Q_U_`MZOQ
WC
(&-
102
(&*
I D [A]
Z thJC [K/W]
WC
10
-1
(&)
(&(-
=C
(&(*
101
(&()
C9>7<5 @E<C5
=C
98
100
10
10-2
-1
10
0
10
1
10
2
V DS [V]
+ 5F
10-5
10-4
10-3
10-2
10-1
100
t p [s]
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94R"V 9H T V T
R 9H"[Z#4R"I 9 T V T
@1B
1=5D5B V =H
@1B1=5D5B
V =H
480
8
.
.
.
.
.
400
6
240
R DS(on) [m ]
I D [A]
320
.
.
4
160
.
.
2
80
.
.
0
0
0
1
2
3
4
5
0
80
160
V DS [V]
240
320
400
480
200
250
300
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94R"V =H K
V 9Hg5*gI 9gR 9H"[Z#YMd
g R_4R"I 9 T V T
@1B
1=5D5B T V
400
280
350
240
300
200
g fs [S]
I D [A]
250
200
160
120
150
80
100
40
50
T
T
0
0
0
2
4
6
0
+ 5F
50
100
150
I D [A]
V GS [V]
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9H"[Z#4R"T V I 9 V =H .
V =H"`T#4R"T V V =H4V 9H
@1B1=5D5B
I9
6
4
3.5
5
W
3
YMd
W
2.5
3
V GS(th) [V]
R DS(on) [m ]
4
`e\
2
1.5
2
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C 4R"V 9H V =H . f & " J
I <4R"V H9#
@1B1=5D5B
TV
105
103
T =1H
8U__
10
T
4
T
102
I F [A]
C [pF]
8[__
103
T =1H
101
8^__
102
101
100
0
20
40
60
V DS [V]
+ 5F
0
0.5
1
1.5
2
V SD [V]
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
13 Avalanche characteristics
14 Typ. gate charge
I 6H4R"t 6J R =H "
V =H4R"Q SM`Q I 9 @E<C54
@1B
1=5D5B T V"_`M^`#
@1B1=5D5B
V 99
103
12
.
10
.
2
T
T
V GS [V]
8
I AS [A]
10
.
T
101
6
4
2
100
0
)
)(
)((
)(((
0
50
t AV [µs]
100
150
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V 7G"9HH#4R"T V I 9 =
70
V =H
Qg
V BR(DSS) [V]
65
60
V S _"`T#
55
Q S "`T#
Q _c
Q S_
50
-60
-20
20
60
100
140
Q g ate
Q SP
180
T j [°C]
+ 5F
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
PG-TO220-3
+ 5F
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
PG-TO262-3 (I²-Pak)
+ 5F
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
PG-TO263 (D²-Pak)
+ 5F
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
+ 5F
@175