IPB029N06N3 G Data Sheet (478 KB)

IPB029N06N3 G
Ie\Q
IPI032N06N3 G
IPP032N06N3 G
™
"%&$!"# 3 Power-Transistor
Product Summary
Features
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Package
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E=%ID**(%+
Marking
(*1C(.C
(+*C(.C
(+*C(.C
Maximum ratings, 1DT V T E><5CC ? D85BG9C5 [email protected] 9
6954
Parameter
Symbol Conditions
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9>E? EC 4B
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T 8 T
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Value
)*(
T 8 T
)*(
Unit
6
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T 8 T
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T 8 T
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@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
(&0
=9>9
=1<6? ? [email protected]>D
3 =V 3 ? ? <9>7 1B51 -#
%
%
,(
.(
%
%
Thermal characteristics
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CD1>3 5 :E>3 D9
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R `[email protected]
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CD1>3 5
R `[email protected]
:E>3 D
9? > 1=2 9
5>D
A'K
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Static characteristics
B19>C? EB35 2 B51;4? G> F? <D175
V "7G#9HH V =H . I 9 =
!1D5 D8B5C8? <4 F? <D175
V =H"`T#
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%
(&)
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V 9H . V =H . T V T
%
*(
*((
J
s6
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@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
)((((
)+((( \<
%
**((
*1((
Dynamic characteristics
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C U__
V =H . V 9H . f & " J
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D1>3 5
C [__
+ 5F5BC5 DB1>C65B3 [email protected] 9D1>3 5
C ^__
%
/+
%
-EB>? > 45<1I D9=5
t P"[Z#
%
+-
%
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%
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%
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%
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%
tR
%
*(
%
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Q S_
%
-+
%
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Q SP
%
))
%
%
++
%
1<<D9
=5
V 99 . V =H . I 9 R = "
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%
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%
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%
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)+,
Z8
%
%
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6
%
%
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%
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J
%
-1
%
Z_
%
0*
%
Z8
V 99 . V =H .
J
Reverse Diode
9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB
5>D
IH
9? 45 @E<C5 3 EBB
5>D
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75
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.#
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T 8 T
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JG . #< PU<4D WC
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@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
1 Power dissipation
2 Drain current
P `[`4R"T 8#
I 94R"T 8 V =H" .
200
140
120
150
80
I D [A]
P tot [W]
100
100
60
40
50
20
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94R"V 9H T 8 T D 4(
Z `[email protected]"t \#
@1B1=5D5B t \
@1B1=5D5B
D 4t \'T
103
100
WC
<9=9D
54 2 I ? >CD1D
5
^Q_U_`MZOQ
WC
(&-
102
(&*
I D [A]
Z thJC [K/W]
WC
10
-1
(&)
(&(-
=C
(&(*
101
(&()
C9>7<5 @E<C5
=C
98
100
10
10-2
-1
10
0
10
1
10
2
V DS [V]
+ 5F
10-5
10-4
10-3
10-2
10-1
100
t p [s]
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94R"V 9H T V T
R 9H"[Z#4R"I 9 T V T
@1B
1=5D5B V =H
@1B1=5D5B
V =H
480
8
.
.
.
.
.
400
6
240
R DS(on) [m ]
I D [A]
320
.
.
4
160
.
.
2
80
.
.
0
0
0
1
2
3
4
5
0
80
160
V DS [V]
240
320
400
480
200
250
300
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94R"V =H K
V 9Hg5*gI 9gR 9H"[Z#YMd
g R_4R"I 9 T V T
@1B
1=5D5B T V
400
280
350
240
300
200
g fs [S]
I D [A]
250
200
160
120
150
80
100
40
50
T
T
0
0
0
2
4
6
0
+ 5F
50
100
150
I D [A]
V GS [V]
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9H"[Z#4R"T V I 9 V =H .
V =H"`T#4R"T V V =H4V 9H
@1B1=5D5B
I9
6
4
3.5
5
W
3
YMd
W
2.5
3
V GS(th) [V]
R DS(on) [m ]
4
`e\
2
1.5
2
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C 4R"V 9H V =H . f & " J
I <4R"V H9#
@1B1=5D5B
TV
105
103
T =1H
8U__
10
T
4
T
102
I F [A]
C [pF]
8[__
103
T =1H
101
8^__
102
101
100
0
20
40
60
V DS [V]
+ 5F
0
0.5
1
1.5
2
V SD [V]
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
13 Avalanche characteristics
14 Typ. gate charge
I 6H4R"t 6J R =H "
V =H4R"Q SM`Q I 9 @E<C54
@1B
1=5D5B T V"_`M^`#
@1B1=5D5B
V 99
103
12
.
10
.
2
T
T
V GS [V]
8
I AS [A]
10
.
T
101
6
4
2
100
0
)
)(
)((
)(((
0
50
t AV [µs]
100
150
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V 7G"9HH#4R"T V I 9 =
70
V =H
Qg
V BR(DSS) [V]
65
60
V S _"`T#
55
Q S "`T#
Q _c
Q S_
50
-60
-20
20
60
100
140
Q g ate
Q SP
180
T j [°C]
+ 5F
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
PG-TO220-3
+ 5F
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
PG-TO262-3 (I²-Pak)
+ 5F
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
PG-TO263 (D²-Pak)
+ 5F
@175 IPB029N06N3 G
IPI032N06N3 G
IPP032N06N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
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reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
+ 5F
@175