BSC360N15NS3 G
"%&$!"#™3 Power-Transistor
Product Summary
Features
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Q" 1<? 75>6B55 13 3 ? B49
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, ' ' , !
Package
E=%I9HDC%0
Marking
+.(C)-CH
Maximum ratings, 1DT V T E><5CC ? D85BG9C5 C@53 9
6954
Parameter
Symbol Conditions
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9>E? EC 4B
19> 3 EBB5>D
I9
T 8 T
++
T 8 T
*)
Unit
6
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I 9$\aX_Q
T 8 T
)+*
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0(
Y@
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q*(
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/,
K
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T V T _`S
T
T 8 T
# 3 <9=1D
93 3 1D57? BI #' # + 5F
Value
@175 BSC360N15NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
)&/
%
%
-(
)-(
%
%
Thermal characteristics
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CD1>3 5 :E>3 D9
? > 3 1C5
R `T@8
-85B=1<B5C9
CD1>3 5 :E>3 D9
? >
MYNUQZ`
R `T@6
3 = 3 ? ? <9>7 1B51 +#
A'K
Electrical characteristics, 1DT V T E><5CC ? D85BG9C5 C@53 96954
Static characteristics
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V "7G#9HH V =H . I 9 =
!1D5 D8B5C8? <4 F? <D175
V =H"`T#
V 9H4V =H I 9 V *
+
,
05B? 71D5 F? <D175 4B
19> 3 EBB5>D
I 9HH
V 9H . V =H . T V T
%
(&)
)
V 9H . V =H . T V T
%
)(
)((
r6
!1D5C? EB35 <51;175 3 EBB5>D
I =HH
V =H . V 9H .
%
)
)((
Z6
B19>C? EB35 ? >CD1D5 B5C9CD1>3 5
R 9H"[Z#
V =H . I 9 %
+)
+.
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+0
%
)&/
%
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%
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+ 5F
J
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@175 BSC360N15NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
01+
))1(
%
)(.
),)
Dynamic characteristics
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C U__
V =H . V 9H . f & " J
( ED@ED3 1@13 9
D1>3 5
C [__
+ 5F5BC5 DB1>C65B3 1@13 9D1>3 5
C ^__
%
,
&
-EB>? > 45<1I D9=5
t P"[Z#
%
1
%
+ 9C5 D9
=5
t^
%
.
%
-EB>? 6645<1I D9=5
t P"[RR#
%
)*
%
tR
%
,
%
!1D5 D? C? EB35 3 81B75
Q S_
%
-
%
!1D5 D? 4B19> 3 81B75
Q SP
%
*
%
%
,
%
1<<D9
=5
V 99 . V =H . I 9 R = "
\<
Z_
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CD
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Z8
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%
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175
V \XM`QMa
%
-&,
%
( ED@ED3 81B75
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%
*1
+1
Z8
%
%
++
6
%
%
)+*
%
)
)&*
J
%
/0
%
Z_
%
*-(
%
Z8
V 99 . V =H .
J
Reverse Diode
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5>D
9? 45 @E<C5 3 EBB
5>D
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V H9
+ 5F5BC5 B53 ? F5BI D9
=5
t ^^
+ 5F5BC5 B53 ? F5BI 3 81B
75
Q ^^
-#
+ 5F
IH
T 8 T
V =H . I < T V T
V G . I < Pi <'Pt V C
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75 @1B1=5D5B4569>9D
9? >
@175 BSC360N15NS3 G
2 Drain current
P `[`4R"T 8#
I 94R"T 8 V =H" .
80
40
60
30
ID [A]
P tot [W]
1 Power dissipation
40
20
20
10
0
0
0
50
100
150
200
0
25
50
75
100
125
150
175
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94R"V 9H T 8 T D 4(
Z `T@84R"t \#
@1B1=5D5B t \
@1B1=5D5B
D 4t \'T
103
101
VC
102
VC
100
Z thJC [K/W]
I D [A]
VC
=C
10
1
(&-
(&*
(&)
(&((&(*
10-1
=C
100
(&()
C9>7<5 @E<C5
98
10-1
10
10-2
-1
10
0
10
1
10
2
10
3
V DS [V]
+ 5F
10-5
10-4
10-3
10-2
10-1
100
t p [s]
@175 BSC360N15NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94R"V 9H T V T
R 9H"[Z#4R"I 9 T V T
@1B
1=5D5B V =H
@1B1=5D5B
V =H
80
60
.
.
.
.
.
50
60
R DS(on) [m ]
I D [A]
.
40
.
40
.
.
.
30
20
20
.
10
.
0
0
0
1
2
3
4
5
0
10
20
V DS [V]
30
40
50
40
50
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94R"V =H K
V 9Hg5*gI 9gR 9H"[Z#YMd
g R_4R"I 9 T V T
@1B
1=5D5B T V
40
50
40
30
g fs [S]
I D [A]
30
20
20
10
10
T
T
0
0
0
1
2
3
4
5
6
7
+ 5F
0
10
20
30
I D [A]
V GS [V]
@175 BSC360N15NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9H"[Z#4R"T V I 9 V =H .
V =H"`T#4R"T V V =H4V 9H
@1B1=5D5B
I9
80
4
70
3.5
60
3
50
2.5
V
V GS(th) [V]
R DS(on) [m ]
V
40
`e\
2
30
1.5
20
1
10
0.5
0
0
-60
-20
20
60
100
140
-60
-20
20
T j [°C]
60
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C 4R"V 9H V =H . f & " J
I <4R"V H9#
@1B1=5D5B
TV
104
103
8U__
103
102
T
I F [A]
C [pF]
8[__
102
T =1H
T
T =1H
101
101
8^__
100
0
20
40
60
80
100
120
V DS [V]
+ 5F
0
0.5
1
1.5
2
V SD [V]
@175 BSC360N15NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I 6H4R"t 6J R =H "
V =H4R"Q SM`Q I 9 @E<C54
@1B
1=5D5B T V"_`M^`#
@1B1=5D5B
V 99
100
10
.
8
.
.
6
V GS [V]
I AS [A]
T
10
T
4
T
2
1
0
1
10
100
1000
0
5
10
15
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V 7G"9HH#4R"T V I 9 =
170
V =H
Qg
V BR(DSS) [V]
160
150
V S _"`T#
140
Q S "`T#
Q _c
Q S_
130
-60
-20
20
60
100
Q g ate
Q SP
140
T j [°C]
+ 5F
@175 BSC360N15NS3 G
PG-TDSON-8 Outline
+ 5F
@175 BSC360N15NS3 G
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@175