Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS™3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS(on),max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G Package PG-TO263-3 PG-TO262-3 PG-TO220-3 Marking 029N06N 032N06N 032N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 120 T C=100 °C 120 Unit A Pulsed drain current3) I D,pulse T C=25 °C 480 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 235 mJ Gate source voltage V GS ±20 V Power dissipation P tot 188 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) 3) 4) Rev. 2.2 55/175/56 J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 188 A. See figure 3 for more detailed information See figure 13 for more detailed information page 1 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 0.8 minimal footprint - - 62 6 cm² cooling area 5) - - 40 60 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=118 µA 2 3 4 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.1 2 V DS=60 V, V GS=0 V, T j=125 °C - 20 200 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 2.6 3.2 mΩ V GS=10 V, I D=100 A, (SMD) - 2.3 2.9 - 1.3 - Ω 75 149 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=100 A 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 10000 13000 pF - 2200 2900 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 73 - Turn-on delay time t d(on) - 35 - Rise time tr - 120 - Turn-off delay time t d(off) - 62 - Fall time tf - 20 - Gate to source charge Q gs - 53 - Gate to drain charge Q gd - 11 - - 33 - V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=120 A, R G=3.5 Ω ns Gate Charge Characteristics 6) V DD=30 V, I D=100 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 124 165 Gate plateau voltage V plateau - 5.2 - Output charge Q oss - 100 134 nC - - 120 A - - 480 - 1.0 1.2 V - 59 - ns - 82 - nC V DD=30 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 6) Rev. 2.2 T C=25 °C V GS=0 V, I F=100 A, T j=25 °C VR=30 V, IF=120A, diF/dt=100 A/µs See figure 16 for gate charge parameter definition page 3 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 140 200 120 150 80 I D [A] P tot [W] 100 100 60 40 50 20 0 0 0 50 100 150 0 200 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 1 µs limited by on-state resistance 10 µs 0.5 102 0.2 I D [A] Z thJC [K/W] 100 µs 10-1 0.1 0.05 1 ms 0.02 101 0.01 single pulse 10 ms DC 100 10 10-2 -1 10 0 10 1 10 2 V DS [V] Rev. 2.2 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 480 8 5V 10 V 5.5 V 6V 7V 400 6 R DS(on) [mΩ] I D [A] 320 6V 240 7V 4 160 10 V 5.5 V 2 80 5V 4.5 V 0 0 0 1 2 3 4 5 0 80 160 V DS [V] 240 320 400 480 200 250 300 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 400 280 350 240 300 200 g fs [S] I D [A] 250 200 160 120 150 80 100 40 50 175 °C 25 °C 0 0 0 2 4 6 0 Rev. 2.2 50 100 150 I D [A] V GS [V] page 5 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 6 4 3.5 5 1180 µA 3 max 118 µA 2.5 3 V GS(th) [V] R DS(on) [mΩ] 4 typ 2 1.5 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 175 °C, max Ciss 25 °C 104 175 °C 102 I F [A] C [pF] Coss 103 25 °C, max 101 Crss 102 101 100 0 20 40 60 V DS [V] Rev. 2.2 0 0.5 1 1.5 2 V SD [V] page 6 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 103 12 30 V 10 12 V 102 48 V 150 °C 100 °C V GS [V] I AS [A] 8 25 °C 101 6 4 2 100 0 1 10 100 1000 0 50 t AV [µs] 100 150 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 70 V GS Qg V BR(DSS) [V] 65 60 V g s(th) 55 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.2 page 7 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G PG-TO220-3 Rev. 2.2 page 8 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G PG-TO262-3 (I²-Pak) Rev. 2.2 page 9 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G PG-TO263 (D²-Pak) Rev. 2.2 page 10 2009-12-11 IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 11 2009-12-11