PRELIMINARY MX25U51245G MX25U51245G 1.8V, 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY Key Features • Multi I/O Support - Single I/O, Dual I/O and Quad I/O • Support DTR (Double Transfer Rate) Mode • 8/16/32/64 byte Wrap-Around Read Mode PRELIMINARY MX25U51245G Contents 1. FEATURES............................................................................................................................................................... 5 2. GENERAL DESCRIPTION...................................................................................................................................... 7 Table 1. Read performance Comparison.....................................................................................................7 3. PIN CONFIGURATIONS .......................................................................................................................................... 8 Table 2. PIN DESCRIPTION........................................................................................................................8 4. BLOCK DIAGRAM.................................................................................................................................................... 9 5. MEMORY ORGANIZATION.................................................................................................................................... 10 6. DATA PROTECTION............................................................................................................................................... 11 6-1. Block lock protection................................................................................................................................. 12 Table 3. Protected Area Sizes....................................................................................................................12 6-2. Additional 8K-bit secured OTP ................................................................................................................. 13 Table 4. 8K-bit Secured OTP Definition.....................................................................................................13 7. DEVICE OPERATION............................................................................................................................................. 14 7-1. 256Mb Address Protocol........................................................................................................................... 16 7-2. Quad Peripheral Interface (QPI) Read Mode........................................................................................... 19 8. COMMAND SET..................................................................................................................................................... 20 Table 5. Read/Write Array Commands.......................................................................................................20 Table 6. Read/Write Array Commands (4 Byte Address Command Set)...................................................21 Table 7. Register/Setting Commands.........................................................................................................22 Table 8. ID/Security Commands.................................................................................................................23 Table 9. Reset Commands.........................................................................................................................24 9. REGISTER DESCRIPTION..................................................................................................................................... 25 9-1. 9-2. 9-3. Status Register......................................................................................................................................... 25 Configuration Register.............................................................................................................................. 26 Security Register...................................................................................................................................... 28 Table 10. Security Register Definition........................................................................................................28 10. COMMAND DESCRIPTION.................................................................................................................................. 29 Write Enable (WREN)............................................................................................................................... 29 Write Disable (WRDI)................................................................................................................................ 30 Read Identification (RDID)........................................................................................................................ 31 Release from Deep Power-down (RDP), Read Electronic Signature (RES)............................................ 32 Read Electronic Manufacturer ID & Device ID (REMS)............................................................................ 34 QPI ID Read (QPIID)................................................................................................................................ 35 Table 11. ID Definitions .............................................................................................................................35 10-7. Read Status Register (RDSR).................................................................................................................. 36 10-8. Read Configuration Register (RDCR)....................................................................................................... 37 10-9. Write Status Register (WRSR).................................................................................................................. 40 Table 12. Protection Modes........................................................................................................................41 10-10.Enter 4-byte mode (EN4B)....................................................................................................................... 44 10-11. Exit 4-byte mode (EX4B).......................................................................................................................... 44 10-12.Read Data Bytes (READ)......................................................................................................................... 45 10-13.Read Data Bytes at Higher Speed (FAST_READ)................................................................................... 46 10-1. 10-2. 10-3. 10-4. 10-5. 10-6. P/N: PM2244 2 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-14.Dual Output Read Mode (DREAD)........................................................................................................... 47 10-15.2 x I/O Read Mode (2READ).................................................................................................................... 48 10-16.Quad Read Mode (QREAD)..................................................................................................................... 49 10-17.4 x I/O Read Mode (4READ).................................................................................................................... 50 10-18.4 x I/O Double Transfer Rate Read Mode (4DTRD)................................................................................. 52 10-19.Preamble Bit ............................................................................................................................................ 54 10-20.4 Byte Address Command Set.................................................................................................................. 58 10-21.Performance Enhance Mode.................................................................................................................... 63 10-22.Burst Read................................................................................................................................................ 68 10-23.Fast Boot.................................................................................................................................................. 69 10-24.Sector Erase (SE)..................................................................................................................................... 72 10-25.Block Erase (BE32K)................................................................................................................................ 73 10-26.Block Erase (BE)...................................................................................................................................... 74 10-27.Chip Erase (CE)........................................................................................................................................ 75 10-28.Page Program (PP).................................................................................................................................. 76 10-29.4 x I/O Page Program (4PP)..................................................................................................................... 78 10-30.Deep Power-down (DP)............................................................................................................................ 79 10-31.Enter Secured OTP (ENSO)..................................................................................................................... 80 10-32.Exit Secured OTP (EXSO)........................................................................................................................ 80 10-33.Read Security Register (RDSCUR).......................................................................................................... 80 10-34.Write Security Register (WRSCUR).......................................................................................................... 80 10-35.Write Protection Selection (WPSEL)......................................................................................................... 81 10-36.Advanced Sector Protection..................................................................................................................... 83 10-37.Program Suspend and Erase Suspend.................................................................................................... 89 Table 13. Acceptable Commands During Suspend...................................................................................90 10-38.Program Resume and Erase Resume...................................................................................................... 91 10-39.No Operation (NOP)................................................................................................................................. 92 10-40.Software Reset (Reset-Enable (RSTEN) and Reset (RST)).................................................................... 92 11. Serial Flash Discoverable Parameter (SFDP)................................................................................................... 94 11-1. Read SFDP Mode (RDSFDP)................................................................................................................... 94 Table 14. Signature and Parameter Identification Data Values .................................................................95 Table 15. Parameter Table (0): JEDEC Flash Parameter Tables...............................................................97 Table 16. Parameter Table (1): 4-Byte Instruction Tables........................................................................104 Table 17. Parameter Table (2): Macronix Flash Parameter Tables..........................................................106 12. RESET................................................................................................................................................................ 108 Table 18. Reset Timing-(Power On).........................................................................................................108 Table 19. Reset Timing-(Other Operation)...............................................................................................108 13. POWER-ON STATE............................................................................................................................................ 109 14. ELECTRICAL SPECIFICATIONS....................................................................................................................... 110 Table 20. ABSOLUTE MAXIMUM RATINGS........................................................................................... 110 Table 21. CAPACITANCE TA = 25°C, f = 1.0 MHz................................................................................... 110 Table 22. DC CHARACTERISTICS......................................................................................................... 112 Table 23. AC CHARACTERISTICS.......................................................................................................... 113 P/N: PM2244 3 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 15. OPERATING CONDITIONS................................................................................................................................ 115 Table 24. Power-Up/Down Voltage and Timing ....................................................................................... 117 15-1. INITIAL DELIVERY STATE......................................................................................................................117 16. ERASE AND PROGRAMMING PERFORMANCE............................................................................................. 118 17. DATA RETENTION............................................................................................................................................. 118 18. LATCH-UP CHARACTERISTICS....................................................................................................................... 118 19. ORDERING INFORMATION............................................................................................................................... 119 20. PART NAME DESCRIPTION.............................................................................................................................. 120 21. PACKAGE INFORMATION................................................................................................................................. 121 22. REVISION HISTORY .......................................................................................................................................... 124 P/N: PM2244 4 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 1.8V 512M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY 1. FEATURES GENERAL • Supports Serial Peripheral Interface -- Mode 0 and Mode 3 • Single Power Supply Operation - 1.65 to 2.0 volt for read, erase, and program operations • 512Mb: 536,870,912 x 1 bit structure or 268,435,456 x 2 bits (two I/O mode) structure or 134,217,728 x 4 bits (four I/O mode) structure • Protocol Support - Single I/O, Dual I/O and Quad I/O • Latch-up protected to 100mA from -1V to Vcc +1V • Fast read for SPI mode - Support fast clock frequency up to 166MHz - Support Fast Read, 2READ, DREAD, 4READ, QREAD instructions - Support DTR (Double Transfer Rate) Mode - Configurable dummy cycle number for fast read operation • Quad Peripheral Interface (QPI) available • Equal Sectors with 4K byte each, or Equal Blocks with 32K byte each or Equal Blocks with 64K byte each - Any Block can be erased individually • Programming : - 256byte page buffer - Quad Input/Output page program(4PP) to enhance program performance • Typical 100,000 erase/program cycles • 20 years data retention SOFTWARE FEATURES • Input Data Format - 1-byte Command code • Advanced Security Features - Block lock protection The BP0-BP3 and T/B status bits define the size of the area to be protected against program and erase instructions - Advanced sector protection function • Additional 8K bit security OTP - Features unique identifier - Factory locked identifiable, and customer lockable • Command Reset • Program/Erase Suspend and Resume operation • Electronic Identification - JEDEC 1-byte manufacturer ID and 2-byte device ID - RES command for 1-byte Device ID - REMS command for 1-byte manufacturer ID and 1-byte device ID • Support Serial Flash Discoverable Parameters (SFDP) mode P/N: PM2244 5 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G HARDWARE FEATURES • SCLK Input - Serial clock input • SI/SIO0 - Serial Data Input or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode • SO/SIO1 - Serial Data Output or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode • WP#/SIO2 - Hardware write protection or serial data Input/Output for 4 x I/O read mode • RESET# - Hardware Reset pin • RESET#/SIO3 * or NC/SIO3 * - Hardware Reset pin or Serial input & Output for 4 x I/O read mode or - No Connection or Serial input & Output for 4 x I/O read mode * Depends on part number options • PACKAGE - 16-pin SOP (300mil) - 24-Ball BGA (5x5 ball array) - 8-land WSON (8x6mm) - All devices are RoHS Compliant and Halogen-free P/N: PM2244 6 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 2. GENERAL DESCRIPTION MX25U51245G is 512Mb bits serial Flash memory, which is configured as 67,108,864 x 8 internally. When it is in two or four I/O mode, the structure becomes 268,435,456 bits x 2 or 134,217,728 bits x 4. MX25U51245G feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input. When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# and RESET# pin become SIO0 pin, SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output. The MX25U51245G MXSMIO (Serial Multi I/O) provides sequential read operation on whole chip. After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256 bytes) basis, or word basis for erase command is executed on sector (4K-byte), block (32K-byte), or block (64K-byte), or whole chip basis. To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read command can be issued to detect completion status of a program or erase operation via WIP bit. Advanced security features enhance the protection and security functions, please see security features section for more details. When the device is not in operation and CS# is high, it is put in standby mode. The MX25U51245G utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after 100,000 program and erase cycles. Table 1. Read performance Comparison Numbers of Dummy Cycles Fast Read (MHz) Dual Output Fast Read (MHz) Quad Output Fast Read (MHz) Dual IO Fast Read (MHz) Quad IO Fast Read (MHz) Quad I/O DT Read 4 - - - 84* 70 42 6 133 133 104 104 84* 52* 8 133* 133* 133* 133 104 66 10 166 166 166 166 133 100 (MHz) Note: * mean default status P/N: PM2244 7 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 3. PIN CONFIGURATIONS 16-PIN SOP (300mil) NC/SIO3 VCC RESET# NC DNU DNU CS# SO/SIO1 1 2 3 4 5 6 7 8 Table 2. PIN DESCRIPTION 16 15 14 13 12 11 10 9 SYMBOL CS# SCLK RESET# DESCRIPTION Chip Select Clock Input Hardware Reset Pin Active low (Note1) Serial Data Input (for 1 x I/O)/ Serial SI/SIO0 Data Input & Output (for 2xI/O or 4xI/ O read mode) Serial Data Output (for 1 x I/O)/ Serial SO/SIO1 Data Input & Output (for 2xI/O or 4xI/ O read mode) Write Protection Active Low or Serial WP#/SIO2 Data Input & Output (for 4xI/O read mode) No Connection or Serial Data Input & NC/SIO3 * Output (for 4xI/O read mode) Hardware Reset Pin Active low or RESET#/SIO3 * Serial Data Input & Output (for 4xI/O read mode) VCC Power Supply GND Ground NC No Connection Do Not Use (It may connect to DNU internal signal inside) SCLK SI/SIO0 NC NC DNU DNU GND WP#/SIO2 8-WSON (8x6mm) CS# SO/SIO1 WP#/SIO2 GND 1 2 3 4 8 7 6 5 VCC RESET#/SIO3 SCLK SI/SIO0 24-Ball BGA (5x5 ball array) 1 2 3 4 5 * Depends on part number options. A B NC NC RESET# DNU NC SCLK GND VCC NC NC CS# NC WP#/SIO2 NC NC SO/SIO1 SI/SIO0 NC/SIO3 NC NC NC NC NC NC C D E P/N: PM2244 Note: 1. RESET# and WP# with internal pull high circuit. 8 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 4. BLOCK DIAGRAM X-Decoder Address Generator SI/SIO0 SO/SIO1 SIO2 * SIO3 * WP# * HOLD# * RESET# * CS# Y-Decoder Data Register Sense Amplifier SRAM Buffer Mode Logic SCLK Memory Array State Machine HV Generator Clock Generator Output Buffer * Depends on part number options. P/N: PM2244 9 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 5. MEMORY ORGANIZATION Sector 1021 2042 … … … … … individual 16 sectors lock/unlock unit:4K-byte 3FF0FFFh 3FEF000h 3FEFFFFh 16360 3FE8000h 3FE8FFFh 16359 3FE7000h 3FE7FFFh … … 3FF0000h 16367 … 16368 16352 3FE0000h 3FE0FFFh 16351 3FDF000h 3FDFFFFh … 2043 3FF7FFFh 16344 3FD8000h 3FD8FFFh 16343 3FD7000h 3FD7FFFh … individual block lock/unlock unit:64K-byte 3FF7000h … 2044 16375 … 1022 3FF8FFFh … 2045 3FF8000h … 2046 16376 … 1023 3FFFFFFh … 2047 Address Range 3FFF000h … 16383 … Block(64K-byte) Block(32K-byte) 16336 3FD0000h 3FD0FFFh 47 002F000h 002FFFFh 0 0 P/N: PM2244 … … … … … 001FFFFh … 0020FFFh 001F000h … 0020000h 31 0018FFFh 0017000h 0017FFFh … 0018000h 23 … 24 0010000h 0010FFFh 15 000F000h 000FFFFh … 16 8 0008000h 0008FFFh 7 0007000h 0007FFFh … 1 32 … 2 0027FFFh … 1 0028FFFh 027000h … 3 0028000h 39 … 4 individual block lock/unlock unit:64K-byte 40 … 2 … 5 … individual block lock/unlock unit:64K-byte 0 0000000h 0000FFFh 10 individual 16 sectors lock/unlock unit:4K-byte REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 6. DATA PROTECTION During power transition, there may be some false system level signals which result in inadvertent erasure or programming. The device is designed to protect itself from these accidental write cycles. The state machine will be reset as standby mode automatically during power up. In addition, the control register architecture of the device constrains that the memory contents can only be changed after specific command sequences have completed successfully. In the following, there are several features to protect the system from the accidental write cycles during VCC powerup and power-down or from system noise. • Valid command length checking: The command length will be checked whether it is at byte base and completed on byte boundary. • Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before other command to change data. • Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from writing all commands except Release from deep power down mode command (RDP) and Read Electronic Signature command (RES), Erase/Program suspend command, Erase/Program resume command and softreset command. • Advanced Security Features: there are some protection and security features which protect content from inadvertent write and hostile access. P/N: PM2244 11 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 6-1. Block lock protection - The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0 and T/B) bits to allow part of memory to be protected as read only. The protected area definition is shown as "Table 3. Protected Area Sizes", the protected areas are more flexible which may protect various area by setting value of BP0-BP3 bits. - The Hardware Protected Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and Status Register Write Protect bit. - In four I/O and QPI mode, the feature of HPM will be disabled. Table 3. Protected Area Sizes Protected Area Sizes (T/B bit = 0) Status bit BP3 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 BP2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 BP1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 BP0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 Protect Level 512Mb 0 (none) 1 (1 block, protected block 1023rd) 2 (2 blocks, protected block 1022nd~1023rd) 3 (4 blocks, protected block 1020th~1023rd) 4 (8 blocks, protected block 1016th~1023rd) 5 (16 blocks, protected block 1008th~1023rd) 6 (32 blocks, protected block 992nd~1023rd) 7 (64 blocks, protected block 960th~1023rd) 8 (128 blocks, protected block 896th~1023rd) 9 (256 blocks, protected block 768th~1023rd) 10 (512 blocks, protected block 512nd~1023rd) 11 (1024 blocks, protected all) 12 (1024 blocks, protected all) 13 (1024 blocks, protected all) 14 (1024 blocks, protected all) 15 (1024 blocks, protected all) Protected Area Sizes (T/B bit = 1) Status bit BP3 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 P/N: PM2244 BP2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 BP1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 Protect Level BP0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 512Mb 0 (none) 1 (1 block, protected block 0th) 2 (2 blocks, protected block 0th~1st) 3 (4 blocks, protected block 0th~3rd) 4 (8 blocks, protected block 0th~7th) 5 (16 blocks, protected block 0th~15th) 6 (32 blocks, protected block 0th~31st) 7 (64 blocks, protected block 0th~63rd) 8 (128 blocks, protected block 0th~127th) 9 (256 blocks, protected block 0th~255th) 10 (512 blocks, protected block 0th~511th) 11 (1024 blocks, protected all) 12 (1024 blocks, protected all) 13 (1024 blocks, protected all) 14 (1024 blocks, protected all) 15 (1024 blocks, protected all) 12 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 6-2. Additional 8K-bit secured OTP The secured OTP for unique identifier: to provide 8K-bit one-time program area for setting device unique serial number. Which may be set by factory or system customer. - Security register bit 0 indicates whether the chip is locked by factory or not. - To program the 8K-bit secured OTP by entering secured OTP mode (with Enter Security OTP command), and going through normal program procedure, and then exiting secured OTP mode by writing Exit Security OTP command. - Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register) command to set customer lock-down bit1 as "1". Please refer to "Table 10. Security Register Definition" for security register bit definition and "Table 4. 8K-bit Secured OTP Definition" for address range definition. - Note: Once lock-down by factory or customer, the corresponding range cannot be changed any more. While in secured OTP mode, array access is not allowed. Table 4. 8K-bit Secured OTP Definition Address range Size Lock-down xxx000~xxx1FF 4096-bit Determined by Customer xxx200~xxx3FF 4096-bit Determined by Factory P/N: PM2244 13 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 7. DEVICE OPERATION 1. Before a command is issued, status register should be checked to ensure device is ready for the intended operation. 2. When incorrect command is inputted to this device, this device becomes standby mode and keeps the standby mode until next CS# falling edge. In standby mode, SO pin of this device should be High-Z. 3. When correct command is inputted to this device, this device becomes active mode and keeps the active mode until next CS# rising edge. 4. Input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK. The difference of Serial mode 0 and mode 3 is shown as "Serial Modes Supported". 5. For the following instructions: RDID, RDSR, RDSCUR, READ/READ4B, FAST_READ/FAST_READ4B, 2READ/2READ4B, DREAD/DREAD4B, 4READ/4READ4B, QREAD/QREAD4B, RDSFDP, RES, REMS, QPIID, RDDPB, RDSPB, RDLR, RDEAR, RDFBR, RDCR, the shifted-in instruction sequence is followed by a data-out sequence. After any bit of data being shifted out, the CS# can be high. For the following instructions: WREN, WRDI, WRSR, SE/SE4B, BE32K/BE32K4B, BE/BE4B, CE, PP/PP4B, 4PP/4PP4B, DP, ENSO, EXSO, WRSCUR, EN4B, EX4B, WPSEL, GBLK, GBULK, SUSPEND, RESUME, NOP, RSTEN, RST, EQIO, RSTQIO the CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed. 6.During the progress of Write Status Register, Program, Erase operation, to access the memory array is neglected and not affect the current operation of Write Status Register, Program, Erase. Figure 1. Serial Modes Supported CPOL CPHA shift in (Serial mode 0) 0 0 SCLK (Serial mode 3) 1 1 SCLK SI shift out MSB SO MSB Note: CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is supported. P/N: PM2244 14 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 2. Serial Input Timing tSHSL CS# tCHSL tSLCH tCHSH tSHCH SCLK tDVCH tCHCL tCHDX tCLCH LSB MSB SI High-Z SO Figure 3. Output Timing (STR mode) CS# tCH SCLK tCLQV tCL tCLQV tCLQX tSHQZ tCLQX LSB SO SI ADDR.LSB IN Figure 4. Output Timing (DTR mode) CS# tCH SCLK tCLQV tCLQX tCL tCLQV tCLQX LSB SO SI tSHQZ ADDR.LSB IN P/N: PM2244 15 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 7-1. 256Mb Address Protocol The original 24 bit address protocol of serial Flash can only access density size below 128Mb. For the memory device of 256Mb and above, the 32bit address is requested for access higher memory size. The MX25U51245G provides three different methods to access the whole density: (1) Command entry 4-byte address mode: Issue Enter 4-Byte mode command to set up the 4BYTE bit in Configuration Register bit. After 4BYTE bit has been set, the number of address cycle become 32-bit. (2) Extended Address Register (EAR): configure the memory device into four 128Mb segments to select which one is active through the EAR<0-1>. (3) 4-byte Address Command Set: When issuing 4-byte address command set, 4-byte address (A31-A0) is requested after the instruction code. Please note that it is not necessary to issue EN4B command before issuing any of 4-byte command set. Enter 4-Byte Address Mode In 4-byte Address mode, all instructions are 32-bits address clock cycles. By using EN4B and EX4B to enable and disable the 4-byte address mode. When 4-byte address mode is enabled, the EAR<0-1> becomes "don't care" for all instructions requiring 4-byte address. The EAR function will be disabled when 4-byte mode is enabled. Extended Address Register The device provides an 8-bit volatile register for extended Address Register: it identifies the extended address (A31~A24) above 128Mb density by using original 3-byte address. Extended Address Register (EAR) Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 A31 A30 A29 A28 A27 A26 A25 A24 For the MX25U51245G the A31 to A26 are Don't Care. During EAR, reading these bits will read as 0. The bit 0 is default as "0". P/N: PM2244 16 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 7. EAR Operation Segments 03FFFFFFh EAR<1-0>= 11 03000000h 02FFFFFFh EAR<1-0>= 10 02000000h 01FFFFFFh EAR<1-0>= 01 01000000h 00FFFFFFh EAR<1-0>= 00 00000000h When under EAR mode, Read, Program, Erase operates in the selected segment by using 3-byte address mode. For the read operation, the whole array data can be continually read out with one command. Data output starts from the selected top or bottom 128Mb, but it can cross the boundary. When the last byte of the segment is reached, the next byte (in a continuous reading) is the first byte of the next segment. However, the EAR (Extended Address Register) value does not change. The random access reading can only be operated in the selected segment. The Chip erase command will erase the whole chip and is not limited by EAR selected segment. However, the sector erase ,block erase , program operation are limited in selected segment and will not cross the boundary. Figure 5. Write EAR Register (WREAR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command SI EAR In C5h 7 4 5 3 2 1 0 MSB High-Z SO 6 Figure 6. Write EAR Register (WREAR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 Mode 3 SCLK Mode 0 Mode 0 Command EAR in SIO[3:0] P/N: PM2244 C5h 17 H0 L0 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 8. Read EAR (RDEAR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command C8h SI SO EAR Out High-Z 7 6 5 4 3 EAR Out 2 1 0 7 6 5 4 3 2 1 0 7 MSB MSB Figure 9. Read EAR (RDEAR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 N SCLK Mode 0 SIO[3:0] C8h H0 L0 H0 L0 H0 L0 H0 L0 MSB LSB EAR Out P/N: PM2244 EAR Out 18 EAR Out EAR Out REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 7-2. Quad Peripheral Interface (QPI) Read Mode QPI protocol enables user to take full advantage of Quad I/O Serial Flash by providing the Quad I/O interface in command cycles, address cycles and as well as data output cycles. Enable QPI mode By issuing 35H command, the QPI mode is enable. Figure 10. Enable QPI Sequence CS# MODE 3 SCLK 0 1 2 3 4 5 6 7 MODE 0 SIO0 35h SIO[3:1] Reset QPI (RSTQIO) To reset the QPI mode, the RSTQIO (F5H) command is required. After the RSTQIO command is issued, the device returns from QPI mode (4 I/O interface in command cycles) to SPI mode (1 I/O interface in command cycles). Note: For EQIO and RSTQIO commands, CS# high width has to follow "write spec" tSHSL for next instruction. Figure 11. Reset QPI Mode CS# SCLK SIO[3:0] P/N: PM2244 F5h 19 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 8. COMMAND SET Table 5. Read/Write Array Commands Command (byte) READ FAST READ (normal read) (fast read data) 2READ (2 x I/O read command) 4READ DREAD (1I 2O read) (4 I/O read start from bottom 128Mb) QREAD (1I 4O read) 4DTRD (Quad I/O DT Read) Mode Address Bytes 1st byte SPI 3/4 03 (hex) SPI 3/4 0B (hex) SPI 3/4 BB (hex) SPI 3/4 3B (hex) SPI/QPI 3/4 EB (hex) SPI 3/4 6B (hex) SPI/QPI 3/4 ED (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 5th byte ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 Dummy* Dummy* Dummy* Dummy* Dummy* Dummy* Data Cycles Action n bytes read out until CS# goes high Command (byte) PP (page program) n bytes read n bytes read n bytes read Quad I/O read n bytes read n bytes read out until CS# out by 2 x I/O out by Dual for bottom out by Quad out (Double goes high until CS# goes output until 128Mb with 6 output until Transfer Rate) high CS# goes high dummy cycles CS# goes high by 4xI/O until CS# goes high Mode SPI/QPI 4PP (quad page program) SPI SPI/QPI BE 32K (block erase 32KB) SPI/QPI Address Bytes 3/4 3/4 3/4 3/4 3/4 0 1st byte 02 (hex) 38 (hex) 20 (hex) 52 (hex) D8 (hex) 60 or C7 (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 SE (sector erase) BE (block erase 64KB) SPI/QPI CE (chip erase) SPI/QPI 5th byte Data Cycles Action 1-256 1-256 to program the quad input to to erase the to erase the selected page program the selected sector selected 32K selected page block to erase the to erase whole selected block chip * Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register. Notes 2: Please note the address cycles above are based on 3-byte address mode. After enter 4-byte address mode by EN4B command, the address cycles will be increased to 4byte. P/N: PM2244 20 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Table 6. Read/Write Array Commands (4 Byte Address Command Set) Command (byte) READ4B FAST READ4B 2READ4B DREAD4B 4READ4B QREAD4B Mode Address Bytes SPI 4 SPI 4 SPI 4 SPI 4 SPI/QPI 4 SPI 4 4DTRD4B (Quad I/O DT Read) SPI/QPI 4 1st byte 13 (hex) 0C (hex) BC (hex) 3C (hex) EC (hex) 6C (hex) EE (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 5th byte ADD4 6th byte ADD4 ADD4 ADD4 ADD4 ADD4 ADD4 Dummy* Dummy* Dummy* Dummy* Dummy* Dummy* Data Cycles Action n bytes read read data byte read data byte read data byte Read data byte read data byte Read data by by by 2 x I/O with by Dual Output by 4 x I/O with byte by Quad out (Double 4 byte address 4 byte address 4 byte address with 4 byte 4 byte address Output with 4 Transfer Rate) address byte address by 4xI/O until CS# goes high SPI 4 BE4B (block erase 64KB) SPI/QPI 4 BE32K4B (block erase 32KB) SPI/QPI 4 SE4B (Sector erase 4KB) SPI/QPI 4 12 (hex) 3E (hex) DC (hex) 5C (hex) 21 (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 ADD3 5th byte ADD4 ADD4 ADD4 ADD4 ADD4 Command (byte) PP4B 4PP4B Mode Address Bytes SPI/QPI 4 1st byte 6th byte Data Cycles Action P/N: PM2244 1-256 1-256 to erase the to erase the to erase the to program the Quad input to selected page program the selected (64KB) selected (32KB) selected (4KB) block with block with sector with with 4byte selected page with 4byte 4byte address 4byte address 4byte address address address 21 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Table 7. Register/Setting Commands Mode SPI/QPI SPI/QPI SPI/QPI RDCR (read configuration register) SPI/QPI 1st byte 06 (hex) 04 (hex) 05 (hex) 15 (hex) Command (byte) WREN WRDI (write enable) (write disable) RDSR (read status register) WRSR RDEAR WREAR (write status/ (read extended (write extended configuration address address register) register) register) SPI/QPI SPI/QPI SPI/QPI 01 (hex) 2nd byte Values 3rd byte Values C8 (hex) C5 (hex) 4th byte 5th byte Data Cycles sets the (WEL) resets the to read out the to read out the write enable (WEL) write values of the values of the latch bit enable latch bit status register configuration register 1-2 to write new values of the status/ configuration register Command (byte) WPSEL (Write Protect Selection) EQIO (Enable QPI) RSTQIO (Reset QPI) EN4B (enter 4-byte mode) EX4B (exit 4-byte mode) Mode 1st byte SPI 68 (hex) SPI 35 (hex) QPI F5 (hex) SPI/QPI B7 (hex) SPI/QPI E9 (hex) to enter and enable individal block protect mode Entering the QPI mode DP (Deep power down) SPI/QPI B9 (hex) RDP (Release from deep power down) SPI/QPI AB (hex) Action 1 read extended write extended address address register register PGM/ERS Suspend (Suspends Program/ Erase) SPI/QPI B0 (hex) PGM/ERS Resume (Resumes Program/ Erase) SPI/QPI 30 (hex) 2nd byte 3rd byte 4th byte 5th byte Data Cycles Action Command (byte) Mode 1st byte Exiting the QPI to enter 4-byte to exit 4-byte mode mode and set mode and clear 4BYTE bit as 4BYTE bit to "1" be "0" SBL (Set Burst Length) SPI/QPI C0 (hex) RDFBR WRFBR ESFBR (read fast boot (write fast boot (erase fast register) register) boot register) SPI SPI SPI 16(hex) 17(hex) 18(hex) 2nd byte 3rd byte 4th byte 5th byte Data Cycles Action P/N: PM2244 1-4 enters deep power down mode release from deep power down mode 4 to set Burst length 22 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Table 8. ID/Security Commands REMS RDID RES (read electronic QPIID (read identific- (read electronic manufacturer & (QPI ID Read) ation) ID) device ID) Mode SPI SPI/QPI SPI QPI Address Bytes 0 0 0 0 1st byte 9F (hex) AB (hex) 90 (hex) AF (hex) Command (byte) 2nd byte x 3rd byte x 4th byte x RDSCUR WRSCUR (read security (write security register) register) Mode SPI/QPI SPI/QPI Address Bytes 0 0 1st byte 2B (hex) 2F (hex) EXSO (exit secured OTP) SPI/QPI 3 5A (hex) SPI/QPI 0 B1 (hex) SPI/QPI 0 C1 (hex) to enter the secured OTP mode to exit the secured OTP mode x ADD2 ADD1 ADD3 ID in QPI interface Dummy (8) Read SFDP mode GBLK (gang block lock) SPI 0 GBULK (gang block unlock) SPI 0 WRLR (write Lock register) SPI 0 RDLR (read Lock register) SPI 0 WRSPB (SPB bit program) SPI 4 7E (hex) 98 (hex) 2C (hex) 2D (hex) E3 (hex) output the outputs JEDEC to read out ID: 1-byte 1-byte Device Manufacturer Manufacturer ID ID & Device ID ID & 2-byte Device ID Command (byte) ENSO (enter secured OTP) ADD1 5th byte Action RDSFDP 2nd byte ADD1 3rd byte ADD2 4th byte ADD3 5th byte ADD4 Data Cycles Action 2 to read value to set the lockof security down bit as register "1" (once lockdown, cannot be updated) whole chip write protect whole chip unprotect Mode Address Bytes ESSPB (all SPB bit erase) SPI 0 RDSPB (read SPB status) SPI 4 WRDPB (write DPB register) SPI 4 RDDPB (read DPB register) SPI 4 1st byte E4 (hex) E2 (hex) E1 (hex) E0 (hex) Command (byte) 2nd byte ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 5th byte ADD4 ADD4 ADD4 Data Cycles 1 1 1 2 Action P/N: PM2244 23 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Table 9. Reset Commands Mode SPI/QPI SPI/QPI RST (Reset Memory) SPI/QPI 1st byte 00 (hex) 66 (hex) 99 (hex) Command (byte) NOP RSTEN (No Operation) (Reset Enable) 2nd byte 3rd byte 4th byte 5th byte Action Note 1: ADD=00H will output the manufacturer ID first and ADD=01H will output device ID first. Note 2: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hidden mode. Note 3: Before executing RST command, RSTEN command must be executed. If there is any other command to interfere, the reset operation will be disabled. Note 4: The number in parentheses after "ADD" or "Data" stands for how many clock cycles it has. For example, "Data(8)" represents there are 8 clock cycles for the data in. Please note the number after "ADD" are based on 3-byte address mode, for 4-byte address mode, which will be increased. P/N: PM2244 24 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 9. REGISTER DESCRIPTION 9-1. Status Register The definition of the status register bits is as below: WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status register cycle. WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/ erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the device will not accept program/erase/write status register instruction. The program/erase command will be ignored if it is applied to a protected memory area. To ensure both WIP bit & WEL bit are both set to 0 and available for next program/erase/operations, WIP bit needs to be confirm to be 0 before polling WEL bit. After WIP bit confirmed, WEL bit needs to be confirm to be 0. BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area (as defined in Table 3) of the device to against the program/erase instruction without hardware protection mode being set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR) instruction to be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector Erase (SE), Block Erase 32KB (BE32K), Block Erase (BE) and Chip Erase (CE) instructions (only if Block Protect bits (BP3:BP0) set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is un-protected. QE bit. The Quad Enable (QE) bit, non-volatile bit, while it is "0" (factory default), it performs non-Quad and WP#, RESET# are enable. While QE is "1", it performs Quad I/O mode and WP#, RESET# are disabled. In the other word, if the system goes into four I/O mode (QE=1), the feature of HPM and RESET will be disabled. SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, is operated together with Write Protection (WP#/SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and WP#/SIO2 pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is no longer accepted for execution and the SRWD bit and Block Protect bits (BP3, BP2, BP1, BP0) are read only. The SRWD bit defaults to be "0". Status Register bit7 SRWD (status register write protect) bit6 QE (Quad Enable) bit5 BP3 (level of protected block) bit4 BP2 (level of protected block) 1=Quad 1=status Enable register write (note 1) (note 1) 0=not Quad disable Enable Non-volatile Non-volatile Non-volatile Non-volatile bit bit bit bit Note 1: see the "Table 3. Protected Area Sizes". P/N: PM2244 bit3 BP1 (level of protected block) bit2 BP0 (level of protected block) (note 1) (note 1) Non-volatile bit Non-volatile bit 25 bit1 bit0 WEL WIP (write enable (write in latch) progress bit) 1=write 1=write enable operation 0=not write 0=not in write enable operation volatile bit volatile bit REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 9-2. Configuration Register The Configuration Register is able to change the default status of Flash memory. Flash memory will be configured after the CR bit is set. ODS bit The output driver strength (ODS2, ODS1, ODS0) bits are volatile bits, which indicate the output driver level (as defined in Output Driver Strength Table) of the device. The Output Driver Strength is defaulted as 30 Ohms when delivered from factory. To write the ODS bits requires the Write Status Register (WRSR) instruction to be executed. TB bit The Top/Bottom (TB) bit is a non-volatile OTP bit. The Top/Bottom (TB) bit is used to configure the Block Protect area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as “0”, which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory device. To write the TB bits requires the Write Status Register (WRSR) instruction to be executed. PBE bit The Preamble Bit Enable (PBE) bit is a volatile bit. It is used to enable or disable the preamble bit data pattern output on dummy cycles. The PBE bit is defaulted as “0”, which means preamble bit is disabled. When it is set as “1”, the preamble bit will be enabled, and inputted into dummy cycles. To write the PBE bits requires the Write Status Register (WRSR) instruction to be executed. 4BYTE Indicator bit By writing EN4B instruction, the 4BYTE bit may be set as "1" to access the address length of 32-bit for memory area of higher density (large than 128Mb). The default state is "0" as the 24-bit address mode. The 4BYTE bit may be cleared by power-off or writing EX4B instruction to reset the state to be "0". Configuration Register bit7 DC1 (Dummy cycle 1) bit6 DC0 (Dummy cycle 0) (note 2) (note 2) volatile bit volatile bit bit5 4 BYTE 0=3-byte address mode 1=4-byte address mode (Default=0) volatile bit bit4 bit3 bit2 bit1 bit0 PBE TB ODS 2 ODS 1 ODS 0 (Preamble bit (top/bottom (output driver (output driver (output driver Enable) selected) strength) strength) strength) 0=Disable 1=Enable 0=Top area protect 1=Bottom area protect (Default=0) (note 1) (note 1) (note 1) OTP volatile bit volatile bit volatile bit volatile bit Note 1: see "Output Driver Strength Table" Note 2: see "Dummy Cycle and Frequency Table (MHz)" P/N: PM2244 26 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Output Driver Strength Table ODS2 0 0 0 0 1 1 1 1 ODS1 0 0 1 1 0 0 1 1 ODS0 0 1 0 1 0 1 0 1 Description 146 Ohms 76 Ohms 52 Ohms 41 Ohms 34 Ohms 30 Ohms 26 Ohms 24 Ohms (Default) Note Impedance at VCC/2 (Typical) Dummy Cycle and Frequency Table (MHz) DC[1:0] 00 (default) 01 10 11 DC[1:0] 00 (default) 01 10 11 DC[1:0] 00 (default) 01 10 11 P/N: PM2244 Numbers of Dummy clock cycles 8 6 8 10 Numbers of Dummy clock cycles 4 6 8 10 Numbers of Dummy clock cycles 6 4 8 10 Fast Read Dual Output Fast Read Quad Output Fast Read 133 133 133 166 133 133 133 166 133 104 133 166 Dual IO Fast Read 84 104 133 166 Quad IO Fast Read Quad I/O DTR Read 84 70 104 133 52 42 66 100 27 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 9-3. Security Register The definition of the Security Register bits is as below: Write Protection Selection bit. Please reference to "Write Protection Selection bit" Erase Fail bit. The Erase Fail bit shows the status of last Erase operation. The bit will be set to "1" if the erase operation failed or the erase region was protected. It will be automatically cleared to "0" if the next erase operation succeeds. Please note that it will not interrupt or stop any operation in the flash memory. Program Fail bit. The Program Fail bit shows the status of the last Program operation. The bit will be set to "1" if the program operation failed or the program region was protected. It will be automatically cleared to "0" if the next program operation succeeds. Please note that it will not interrupt or stop any operation in the flash memory. Erase Suspend bit. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is cleared to "0" after erase operation resumes. Program Suspend bit. Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB is cleared to "0" after program operation resumes. Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory or not. When it is "0", it indicates non-factory lock; "1" indicates factory-lock. Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the Secured OTP area cannot be updated any more. While it is in secured OTP mode, main array access is not allowed. Table 10. Security Register Definition bit7 bit6 bit5 bit4 WPSEL E_FAIL P_FAIL Reserved 0=normal WP mode 1=individual mode (default=0) 0=normal Erase succeed 1=indicate Erase failed (default=0) 0=normal Program succeed 1=indicate Program failed (default=0) - 0=Erase is not suspended 1= Erase suspended (default=0) Non-volatile bit (OTP) Volatile bit Volatile bit Volatile bit Volatile bit P/N: PM2244 bit3 bit2 ESB PSB (Erase (Program Suspend bit) Suspend bit) 28 bit1 bit0 LDSO Secured OTP (indicate if indicator bit lock-down) 0 = not lock0=Program down 0 = nonis not 1 = lock-down factory suspended (cannot lock 1= Program program/ 1 = factory suspended erase lock (default=0) OTP) Non-volatile Non-volatile Volatile bit bit bit (OTP) (OTP) REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10. COMMAND DESCRIPTION 10-1.Write Enable (WREN) The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP/ PP4B, 4PP/4PP4B, SE/SE4B, BE32K/BE32K4B, BE/BE4B, CE, and WRSR, which are intended to change the device content WEL bit should be set every time after the WREN instruction setting the WEL bit. The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in SPI mode. Figure 12. Write Enable (WREN) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 SCLK Mode 0 Command SI 06h High-Z SO Figure 13. Write Enable (WREN) Sequence (QPI Mode) CS# 0 Mode 3 1 SCLK Mode 0 Command 06h SIO[3:0] P/N: PM2244 29 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-2.Write Disable (WRDI) The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit. The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in SPI mode. The WEL bit is reset by following situations: - Power-up - Reset# pin driven low - WRDI command completion - WRSR command completion - PP/PP4B command completion - 4PP/4PP4B command completion - SE/SE4B command completion - BE32K/BE32K4B command completion - BE/BE4B command completion - CE command completion - PGM/ERS Suspend command completion - Softreset command completion - WRSCUR command completion - WPSEL command completion - GBLK command completion - GBULK command completion - WREAR command completion - WRLR command completion - WRSPB command completion - ESSPB command completion - WRDPB command completion - WRFBR command completion - ESFBR command completion Figure 14. Write Disable (WRDI) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 SCLK Mode 0 SI SO P/N: PM2244 Command 04h High-Z 30 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 15. Write Disable (WRDI) Sequence (QPI Mode) CS# 0 Mode 3 1 SCLK Mode 0 Command 04h SIO[3:0] 10-3.Read Identification (RDID) The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix Manufacturer ID and Device ID are listed as "Table 11. ID Definitions". The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out on SO→ to end RDID operation can drive CS# to high at any time during data out. While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby stage. Figure 16. Read Identification (RDID) Sequence (SPI mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 13 14 15 16 17 18 28 29 30 31 SCLK Mode 0 Command SI 9Fh Manufacturer Identification SO High-Z 7 6 5 2 MSB P/N: PM2244 1 Device Identification 0 15 14 13 3 2 1 0 MSB 31 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-4.Release from Deep Power-down (RDP), Read Electronic Signature (RES) The Release from Deep Power-down (RDP) instruction is completed by driving Chip Select (CS#) High. When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip Select (CS#) must remain High for at least tRES2(max), as specified in "Table 23. AC CHARACTERISTICS". Once in the Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The RDP instruction is only for releasing from Deep Power Down Mode. Reset# pin goes low will release the Flash from deep power down mode. RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as Table 11 ID Definitions. This is not the same as RDID instruction. It is not recommended to use for new design. For new design, please use RDID instruction. Even in Deep power-down mode, the RDP and RES are also allowed to be executed, only except the device is in progress of program/erase/write cycle; there's no effect on the current program/erase/write cycle in progress. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously in Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in Deep Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute instruction. Figure 17. Read Electronic Signature (RES) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 SCLK Mode 0 Command SI ABh tRES2 3 Dummy Bytes 23 22 21 3 2 1 0 MSB SO Electronic Signature Out High-Z 7 6 5 4 3 2 1 0 MSB Deep Power-down Mode P/N: PM2244 32 Stand-by Mode REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 18. Read Electronic Signature (RES) Sequence (QPI Mode) CS# MODE 3 0 1 2 3 4 5 6 7 SCLK MODE 0 3 Dummy Bytes Command SIO[3:0] X ABh X X X X X H0 L0 MSB LSB Data In Data Out Stand-by Mode Deep Power-down Mode Figure 19. Release from Deep Power-down (RDP) Sequence (SPI Mode) CS# 0 Mode 3 1 2 3 4 5 6 tRES1 7 SCLK Mode 0 Command SI ABh High-Z SO Deep Power-down Mode Stand-by Mode Figure 20. Release from Deep Power-down (RDP) Sequence (QPI Mode) CS# Mode 3 tRES1 0 1 SCLK Mode 0 Command SIO[3:0] ABh Deep Power-down Mode P/N: PM2244 33 Stand-by Mode REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-5.Read Electronic Manufacturer ID & Device ID (REMS) The REMS instruction returns both the JEDEC assigned manufacturer ID and the device ID. The Device ID values are listed in Table 11 of ID Definitions. The REMS instruction is initiated by driving the CS# pin low and sending the instruction code "90h" followed by two dummy bytes and one address byte (A7~A0). After which the manufacturer ID for Macronix (C2h) and the device ID are shifted out on the falling edge of SCLK with the most significant bit (MSB) first. If the address byte is 00h, the manufacturer ID will be output first, followed by the device ID. If the address byte is 01h, then the device ID will be output first, followed by the manufacturer ID. While CS# is low, the manufacturer and device IDs can be read continuously, alternating from one to the other. The instruction is completed by driving CS# high. Figure 21. Read Electronic Manufacturer & Device ID (REMS) Sequence (SPI Mode only) CS# SCLK Mode 3 0 1 2 Mode 0 3 4 5 6 7 8 Command SI 9 10 2 Dummy Bytes 15 14 13 90h 3 2 1 0 High-Z SO CS# 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK ADD (1) SI 7 6 5 4 3 2 1 0 Manufacturer ID SO 7 6 5 4 3 2 1 Device ID 0 7 6 5 4 3 2 MSB MSB 1 0 7 MSB Notes: (1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first. P/N: PM2244 34 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-6.QPI ID Read (QPIID) User can execute this QPIID Read instruction to identify the Device ID and Manufacturer ID. The sequence of issue QPIID instruction is CS# goes low→sending QPI ID instruction→Data out on SO→CS# goes high. Most significant bit (MSB) first. After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer ID, memory type, and device ID data byte will be output continuously, until the CS# goes high. Table 11. ID Definitions Command Type RDID 9Fh RES ABh REMS 90h QPIID AFh P/N: PM2244 MX25U51245G Manufactory ID C2 Manufactory ID C2 Manufactory ID C2 Memory type 25 Electronic ID 3A Device ID 3A Memory type 25 35 Memory density 3A Memory density 3A REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-7.Read Status Register (RDSR) The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before sending a new instruction when a program, erase, or write status register operation is in progress. The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data out on SO. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Figure 22. Read Status Register (RDSR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command 05h SI SO Status Register Out High-Z 7 6 5 4 3 2 1 Status Register Out 0 7 6 5 4 3 2 1 0 7 MSB MSB Figure 23. Read Status Register (RDSR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 N SCLK Mode 0 SIO[3:0] 05h H0 L0 H0 L0 H0 L0 H0 L0 MSB LSB Status Byte Status Byte Status Byte P/N: PM2244 36 Status Byte REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-8.Read Configuration Register (RDCR) The RDCR instruction is for reading Configuration Register Bits. The Read Configuration Register can be read at any time (even in program/erase/write configuration register condition). It is recommended to check the Write in Progress (WIP) bit before sending a new instruction when a program, erase, or write configuration register operation is in progress. The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Configuration Register data out on SO. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Figure 24. Read Configuration Register (RDCR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command 15h SI SO Configuration register Out High-Z 7 6 5 4 3 2 1 0 Configuration register Out 7 6 5 4 3 2 1 0 7 MSB MSB Figure 25. Read Configuration Register (RDCR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 N SCLK Mode 0 SIO[3:0] 15h H0 L0 H0 L0 H0 L0 H0 L0 MSB LSB Config. Byte Config. Byte Config. Byte P/N: PM2244 37 Config. Byte REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows: Figure 26. Program/Erase flow with read array data start WREN command RDSR command* WEL=1? No Yes Program/erase command Write program data/address (Write erase address) RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0], QE, and SRWD data Read array data (same address of PGM/ERS) No Verify OK? Yes Program/erase successfully Program/erase another block? No Program/erase fail Yes * Issue RDSR to check BP[3:0]. * If WPSEL = 1, issue RDSPB and RDDPB to check the block status. Program/erase completed P/N: PM2244 38 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 27. Program/Erase flow without read array data (read P_FAIL/E_FAIL flag) start WREN command RDSR command* WEL=1? No Yes Program/erase command Write program data/address (Write erase address) RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0], QE, and SRWD data RDSCUR command Yes P_FAIL/E_FAIL =1 ? No Program/erase fail Program/erase successfully Program/erase another block? No Yes * Issue RDSR to check BP[3:0]. * If WPSEL = 1, issue RDSPB and RDDPB to check the block status. Program/erase completed P/N: PM2244 39 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-9.Write Status Register (WRSR) The WRSR instruction is for changing the values of Status Register Bits and Configuration Register Bits. Before sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1, BP0) bits to define the protected area of memory (as shown in Table 3). The WRSR also can set or reset the Quad enable (QE) bit and set or reset the Status Register Write Disable (SRWD) bit in accordance with Write Protection (WP#/ SIO2) pin signal, but has no effect on bit1(WEL) and bit0 (WIP) of the status register. The WRSR instruction cannot be executed once the Hardware Protected Mode (HPM) is entered. The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register data on SI→CS# goes high. The CS# must go high exactly at the 8 bits or 16 bits data boundary; otherwise, the instruction will be rejected and not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress. The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL) bit is reset. Figure 28. Write Status Register (WRSR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Mode 0 SI SO command 01h Status Register In 7 6 4 5 Configuration Register In 2 3 0 15 14 13 12 11 10 9 1 8 MSB High-Z Note : The CS# must go high exactly at 8 bits or 16 bits data boundary to completed the write register command. Figure 29. Write Status Register (WRSR) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 Mode 3 SCLK Mode 0 Mode 0 SR in Command SIO[3:0] P/N: PM2244 01h H0 40 L0 CR in H1 L1 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Software Protected Mode (SPM): - When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0 and T/B bit, is at software protected mode (SPM). - When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0 and T/B bit, is at software protected mode (SPM) Note: If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously been set. It is rejected to write the Status Register and not be executed. Hardware Protected Mode (HPM): - When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2, BP1, BP0 and T/B bit and hardware protected mode by the WP#/SIO2 to against data modification. Note: To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered. If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only can use software protected mode via BP3, BP2, BP1, BP0 and T/B bit. If the system enter QPI or set QE=1, the feature of HPM will be disabled. Table 12. Protection Modes Mode Software protection mode (SPM) Hardware protection mode (HPM) Status register condition WP# and SRWD bit status Memory Status register can be written in (WEL bit is set to "1") and the SRWD, BP0-BP3 bits can be changed WP#=1 and SRWD bit=0, or WP#=0 and SRWD bit=0, or WP#=1 and SRWD=1 The protected area cannot be program or erase. The SRWD, BP0-BP3 of status register bits cannot be changed WP#=0, SRWD bit=1 The protected area cannot be program or erase. Note: 1. As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in Table 3. P/N: PM2244 41 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 30. WRSR flow start WREN command RDSR command WEL=1? No Yes WRSR command Write status register data RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0], QE, and SRWD data Verify OK? No Yes WRSR successfully P/N: PM2244 WRSR fail 42 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 31. WP# Setup Timing and Hold Timing during WRSR when SRWD=1 WP# tSHWL tWHSL CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK 01h SI SO High-Z Note: WP# must be kept high until the embedded operation finish. P/N: PM2244 43 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-10. Enter 4-byte mode (EN4B) The EN4B instruction enables accessing the address length of 32-bit for the memory area of higher density (larger than 128Mb). The device default is in 24-bit address mode; after sending out the EN4B instruction, the bit5 (4BYTE bit) of security register will be automatically set to "1" to indicate the 4-byte address mode has been enabled. Once the 4-byte address mode is enabled, the address length becomes 32-bit instead of the default 24-bit. There are three methods to exit the 4-byte mode: writing exit 4-byte mode (EX4B) instruction, Reset or power-off. All instructions are accepted normally, and just the address bit is changed from 24-bit to 32-bit. The following command don't support 4bye address: RDSFDP, RES and REMS. The sequence of issuing EN4B instruction is: CS# goes low → sending EN4B instruction to enter 4-byte mode( automatically set 4BYTE bit as "1") → CS# goes high. 10-11.Exit 4-byte mode (EX4B) The EX4B instruction is executed to exit the 4-byte address mode and return to the default 3-bytes address mode. After sending out the EX4B instruction, the bit5 (4BYTE bit) of Configuration register will be cleared to be "0" to indicate the exit of the 4-byte address mode. Once exiting the 4-byte address mode, the address length will return to 24-bit. The sequence of issuing EX4B instruction is: CS# goes low → sending EX4B instruction to exit 4-byte mode (automatically clear the 4BYTE bit to be "0") → CS# goes high. P/N: PM2244 44 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-12. Read Data Bytes (READ) The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been reached. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing READ instruction is: CS# goes low→sending READ instruction code→ 3-byte or 4-byte address on SI→ data out on SO→to end READ operation can use CS# to high at any time during data out. Figure 32. Read Data Bytes (READ) Sequence (SPI Mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK Mode 0 SI command 03h 24-Bit Address (Note) 23 22 21 3 2 1 0 MSB SO Data Out 1 High-Z 7 6 5 4 3 2 Data Out 2 1 0 7 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2244 45 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-13. Read Data Bytes at Higher Speed (FAST_READ) The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when the highest address has been reached. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B) Mode section. Read on SPI Mode The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ instruction code→ 3-byte or 4-byte address on SI→ 8 dummy cycles (default)→ data out on SO→ to end FAST_ READ operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 33. Read at Higher Speed (FAST_READ) Sequence (SPI Mode) CS# SCLK Mode 3 0 1 2 Mode 0 3 5 6 7 8 9 10 Command SI SO 4 28 29 30 31 24-Bit Address (Note) 23 22 21 0Bh 3 2 1 0 High-Z CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Configurable Dummy Cycle SI 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 SO 7 6 5 4 3 2 1 0 7 MSB MSB 6 5 4 3 2 1 0 7 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2244 46 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-14. Dual Output Read Mode (DREAD) The DREAD instruction enable double throughput of Serial Flash in read mode. The address is latched on rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single DREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing DREAD instruction, the following data out will perform as 2-bit instead of previous 1-bit. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing DREAD instruction is: CS# goes low→ sending DREAD instruction→3-byte or 4-byte address on SIO0→ 8 dummy cycles (default) on SIO0→ data out interleave on SIO1 & SIO0→ to end DREAD operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 34. Dual Read Mode Sequence CS# 0 1 2 3 4 5 6 7 8 … Command SI/SIO0 SO/SIO1 30 31 32 9 SCLK 3B … 24 ADD Cycle A23 A22 … 39 40 41 42 43 44 45 A1 A0 High Impedance Configurable Dummy Cycle Data Out 1 Data Out 2 D6 D4 D2 D0 D6 D4 D7 D5 D3 D1 D7 D5 Notes: 1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address cycles will be increased. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2244 47 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-15. 2 x I/O Read Mode (2READ) The 2READ instruction enable double throughput of Serial Flash in read mode. The address is latched on rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 3-byte or 4-byte address interleave on SIO1 & SIO0→ 4 dummy cycles (default) on SIO1 & SIO0→ data out interleave on SIO1 & SIO0→ to end 2READ operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 35. 2 x I/O Read Mode Sequence (SPI Mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 Mode 3 17 18 19 20 21 22 23 24 25 26 27 28 29 30 SCLK Mode 0 Command SI/SIO0 SO/SIO1 BBh 12 ADD Cycles (Note) Configurable Dummy Cycle Data Out 1 Mode 0 Data Out 2 A22 A20 A18 A4 A2 A0 D6 D4 D2 D0 D6 D4 D2 D0 A23 A21 A19 A5 A3 A1 D7 D5 D3 D1 D7 D5 D3 D1 Notes: 1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address cycles will be increased. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2244 48 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-16. Quad Read Mode (QREAD) The QREAD instruction enable quad throughput of Serial Flash in read mode. The address is latched on rising edge of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fQ. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single QREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing QREAD instruction, the following data out will perform as 4-bit instead of previous 1-bit. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing QREAD instruction is: CS# goes low→ sending QREAD instruction → 3-byte or 4-byte address on SI → 8 dummy cycle (Default) → data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end QREAD operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 36. Quad Read Mode Sequence CS# 0 1 2 3 4 5 6 7 8 … Command SIO0 SIO1 SIO2 SIO3 29 30 31 32 33 9 SCLK 6B … 24 ADD Cycles A23 A22 … High Impedance 38 39 40 41 42 A2 A1 A0 Configurable dummy cycles Data Data Data Out 1 Out 2 Out 3 D4 D0 D4 D0 D4 D5 D1 D5 D1 D5 High Impedance D6 D2 D6 D2 D6 High Impedance D7 D3 D7 D3 D7 Notes: 1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address cycles will be increased. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2244 49 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-17. 4 x I/O Read Mode (4READ) The 4READ instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fQ. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following address/dummy/data out will perform as 4-bit instead of previous 1-bit. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte mode, please refer to the enter 4-byte mode (EN4B) Mode section. 4 x I/O Read on SPI Mode (4READ) The sequence of issuing 4READ instruction is: CS# goes low→ sending 4READ instruction→ 3-byte or 4-byte address interleave on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles (Default) →data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ operation can use CS# to high at any time during data out. 4 x I/O Read on QPI Mode (4READ) The 4READ instruction also support on QPI command mode. The sequence of issuing 4READ instruction QPI mode is: CS# goes low→ sending 4READ instruction→ 3-byte or 4-byte address interleave on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles (Default) →data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. P/N: PM2244 50 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 37. 4 x I/O Read Mode Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 Mode 3 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SCLK Mode 0 Command 6 ADD Cycles Data Out 1 Performance enhance indicator (Note 1) Data Out 2 Data Out 3 Mode 0 Configurable Dummy Cycle (Note 3) EA/EBh A20 A16 A12 A8 A4 A0 P4 P0 D4 D0 D4 D0 D4 D0 SIO1 A21 A17 A13 A9 A5 A1 P5 P1 D5 D1 D5 D1 D5 D1 SIO2 A22 A18 A14 A10 A6 A2 P6 P2 D6 D2 D6 D2 D6 D2 SIO3 A23 A19 A15 A11 A7 A3 P7 P3 D7 D3 D7 D3 D7 D3 SIO0 Notes: 1. Hi-impedance is inhibited for the two clock cycles. 2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited. 3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. 4. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. Figure 38. 4 x I/O Read Mode Sequence (QPI Mode) CS# MODE 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 MODE 3 SCLK MODE 0 SIO[3:0] MODE 0 EBh Data In A20A23 A16A19 A12A15 A8A11 24-bit Address (Note) A4A7 A0A3 X X X X Configurable Dummy Cycle X X H0 L0 H1 L1 H2 L2 H3 L3 MSB Data Out Notes: 1. Please note the above address cycles are base on 3-byte address mode, for 4-byte address mode, the address cycles will be increased. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2244 51 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-18. 4 x I/O Double Transfer Rate Read Mode (4DTRD) The 4DTRD instruction enables Double Transfer Rate throughput on quad I/O of Serial Flash in read mode. A Quad Enable (QE) bit of status Register must be set to "1" before sending the 4DTRD instruction. The address (interleave on 4 I/O pins) is latched on both rising and falling edge of SCLK, and data (interleave on 4 I/O pins) shift out on both rising and falling edge of SCLK. The 8-bit address can be latched-in at one clock, and 8-bit data can be read out at one clock, which means four bits at rising edge of clock, the other four bits at falling edge of clock. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single 4DTRD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 4DTRD instruction, the following address/ dummy/data out will perform as 8-bit instead of previous 1-bit. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. While Program/Erase/Write Status Register cycle is in progress, 4DTRD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. P/N: PM2244 52 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 39. Fast Quad I/O DT Read (4DTRD) Sequence (SPI Mode) CS# Mode 3 0 7 SCLK 8 9 10 11 16 … Mode 0 17 18 … Command Performance Enhance Indicator 3 ADD Cycles Configurable Dummy Cycle A20 A16 … A4 A0 P4 P0 D4 D0 D4 D0 D4 SIO1 A21 A17 … A5 A1 P5 P1 D5 D1 D5 D1 D5 SIO2 A22 A18 … A6 A2 P6 P2 D6 D2 D6 D2 D6 SIO3 A23 A19 … A7 A3 P7 P3 D7 D3 D7 D3 D7 SIO0 EDh Notes: 1. Hi-impedance is inhibited for this clock cycle. 2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) will result in entering the performance enhance mode. 3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register. 4. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. Figure 40. Fast Quad I/O DT Read (4DTRD) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 11 10 SCLK 12 … Mode 0 Command 3 ADD Cycles Performance Enhance Indicator Configurable Dummy Cycle SIO[3:0] EDh A20 | A23 A16 | A19 A12 | A15 A8 | A11 A4 | A7 A0 | A3 P1 P0 H0 L0 H1 L1 H2 Notes: 1. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. 2.Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register. P/N: PM2244 53 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-19. Preamble Bit The Preamble Bit data pattern supports system/memory controller to determine valid window of data output more easily and improve data capture reliability while the flash memory is running in high frequency. Preamble Bit data pattern can be enabled or disabled by setting the bit4 of Configuration register (Preamble bit Enable bit). Once the CR<4> is set, the preamble bit is inputted into dummy cycles. Enabling preamble bit will not affect the function of enhance mode bit. In Dummy cycles, performance enhance mode bit still operates with the same function. Preamble bit will output after performance enhance mode bit. The preamble bit is a fixed 8-bit data pattern (00110100). While dummy cycle number reaches 10, the complete 8 bits will start to output right after the performance enhance mode bit. While dummy cycle is not sufficient of 10 cycles, the rest of the preamble bits will be cut. For example, 8 dummy cycles will cause 6 preamble bits to output, and 6 dummy cycles will cause 4 preamble bits to output. Figure 41. SDR 1I/O (10DC) CS# SCK … … Dummy cycle Command cycle SI CMD Address cycle An … Preamble bits A0 SO 7 6 5 4 3 2 1 0 D7 D6 D7 D6 … Figure 42. SDR 1I/O (8DC) CS# SCK … … Dummy cycle Command cycle SI SO P/N: PM2244 CMD Address cycle An … Preamble bits A0 7 54 6 5 4 3 2 D5 D4 … REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 43. SDR 2I/O (10DC) CS# SCK … … Dummy cycle Command cycle SIO0 CMD SIO1 Address cycle Toggle bits Preamble bits A(n-1) … A0 7 6 5 4 3 2 1 0 D6 D4 D2 D0 An … A1 7 6 5 4 3 2 1 0 D7 D5 D3 D1 … … Figure 44. SDR 2I/O (8DC) CS# SCK … … Dummy cycle Command cycle SIO0 SIO1 P/N: PM2244 CMD Address cycle Toggle bits Preamble bits A(n-1) … A0 7 6 5 4 3 2 D6 D4 D2 D0 An … A1 7 6 5 4 3 2 D7 D5 D3 D1 55 … … REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 45. SDR 4I/O (10DC) CS# SCK … … Dummy cycle Command cycle Toggle bits Address cycle Preamble bits A(n-3) … A0 7 6 5 4 3 2 1 0 D4 D0 SIO1 A(n-2) … A1 7 6 5 4 3 2 1 0 D5 D1 SIO2 A(n-1) … A2 7 6 5 4 3 2 1 0 D6 D2 … SIO3 An … A3 7 6 5 4 3 2 1 0 D7 D3 … SIO0 CMD … … Figure 46. SDR 4I/O (8DC) CS# SCK … … Dummy cycle Command cycle Address cycle Toggle bits Preamble bits A(n-3) … A0 7 6 5 4 3 2 D4 D0 SIO1 A(n-2) … A1 7 6 5 4 3 2 D5 D1 SIO2 A(n-1) … A2 7 6 5 4 3 2 D6 D2 SIO3 An … A3 7 6 5 4 3 2 D7 D3 SIO0 P/N: PM2244 CMD 56 … … … … REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 47. DTR4IO (DC=6) CS# SCK … … Dummy cycle Command cycle SIO0 Address cycle CMD Toggle Bits Learning pattern … A0 7 6 5 4 3 2 1 0 D4 D0 D4 D0 D4 D0 D4 D0 … … A1 7 6 5 4 3 2 1 0 D5 D1 D5 D1 D5 D1 D5 D1 … … A2 7 6 5 4 3 2 1 0 D6 D2 D6 D2 D6 D2 D6 D2 … … A3 7 6 5 4 3 2 1 0 D7 D3 D7 D3 D7 D3 D7 D3 … A(n-3) SIO1 A(n-2) SIO2 A(n-1) SIO3 An P/N: PM2244 57 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-20. 4 Byte Address Command Set The operation of 4-byte address command set was very similar to original 3-byte address command set. The only different is all the 4-byte command set request 4-byte address (A31-A0) followed by instruction code. The command set support 4-byte address including: READ4B, Fast_Read4B, DREAD4B, 2READ4B, QREAD4B, 4READ4B, 4DTRD4B, PP4B, 4PP4B, SE4B, BE32K4B, BE4B. Please note that it is not necessary to issue EN4B command before issuing any of 4-byte command set. Figure 48. Read Data Bytes using 4 Byte Address Sequence (READ4B) CS# 0 1 2 3 4 5 6 7 8 36 37 38 39 40 41 42 43 44 45 46 47 9 10 SCLK Command 32-bit address 31 30 29 13h SI 3 2 1 0 MSB Data Out 1 High Impedance SO 7 6 5 4 Data Out 2 2 3 1 0 7 MSB Figure 49. Read Data Bytes at Higher Speed using 4 Byte Address Sequence (FASTREAD4B) CS# 0 1 2 3 4 5 6 7 8 9 10 36 37 38 39 SCLK Command 32-bit address 31 30 29 0Ch SI 3 2 1 0 High Impedance SO CS# 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 SCLK Configurable Dummy cycles SI 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 SO 7 6 5 4 MSB 3 2 1 0 7 6 MSB 5 4 3 2 1 0 7 MSB Note: 1.Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2244 58 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 50. 2 x I/O Fast Read using 4 Byte Address Sequence (2READ4B) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Mode 3 SCLK Mode 0 BCh SI/SIO0 SO/SIO1 Data Out 1 Configurable Dummy Cycle 16 ADD Cycles Command Data Out 2 A30 A28 A26 A4 A2 A0 D6 D4 D2 D0 D6 D4 D2 D0 A31 A29 A27 A5 A3 A1 D7 D5 D3 D1 D7 D5 D3 D1 Mode 0 Note: 1.Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. Figure 51. 4 I/O Fast Read using 4 Byte Address sequence (4READ4B) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Mode 3 SCLK Mode 0 Command 8 ADD Cycles Performance enhance indicator Data Out 1 Data Out 2 Data Out 3 Mode 0 Configurable Dummy Cycle SIO0 ECh A28 A24 A20 A16 A12 A8 A4 A0 P4 P0 D4 D0 D4 D0 D4 D0 SIO1 A29 A25 A21 A17 A13 A9 A5 A1 P5 P1 D5 D1 D5 D1 D5 D1 SIO2 A30 A26 A22 A18 A14 A10 A6 A2 P6 P2 D6 D2 D6 D2 D6 D2 SIO3 A31 A27 A23 A19 A15 A11 A7 A3 P7 P3 D7 D3 D7 D3 D7 D3 Note: 1.Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2244 59 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 52. Fast Quad I/O DT Read (4DTRD4B) Sequence (SPI Mode) CS# Mode 3 0 7 SCLK 8 9 10 11 12 17 … Mode 0 18 19 … Command Performance Enhance Indicator 4 ADD Cycles Configurable Dummy Cycle A28 A24 … A4 A0 P4 P0 D4 D0 D4 D0 D4 SIO1 A29 A25 … A5 A1 P5 P1 D5 D1 D5 D1 D5 SIO2 A30 A26 … A6 A2 P6 P2 D6 D2 D6 D2 D6 SIO3 A31 A27 … A7 A3 P7 P3 D7 D3 D7 D3 D7 SIO0 EEh Note: 1.Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. Figure 53. Fast Quad I/O DT Read (4DTRD4B) Sequence (QPI Mode) CS# Mode 3 0 1 2 4 3 5 6 12 11 SCLK 13 … Mode 0 Command 4 ADD Cycles Performance Enhance Indicator Configurable Dummy Cycle SIO[3:0] EEh A28 | A31 A24 | A27 A20 | A23 A16 | A19 A12 | A15 A8 | A11 A4 | A7 A0 | A3 P1 P0 H0 L0 H1 L1 H2 Note: 1.Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. P/N: PM2244 60 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 54. Sector Erase (SE4B) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 9 SCLK Mode 0 32-Bit Address Command SI 31 30 21h 2 1 0 MSB Figure 55. Block Erase 32KB (BE32K4B) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 37 38 39 SCLK Mode 0 Command SI 32-Bit Address 2 31 30 5Ch 1 0 MSB Figure 56. Block Erase (BE4B) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 37 38 39 SCLK Mode 0 SI Command 32-Bit Address 31 30 DCh 2 1 0 MSB P/N: PM2244 61 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 57. Page Program (PP4B) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 36 37 38 39 40 41 42 43 44 45 46 47 SCLK 1 0 7 6 5 3 2 1 0 2087 2 2086 3 2085 31 30 29 12h SI Data Byte 1 32-Bit Address 2084 Command 2083 Mode 0 4 1 0 MSB MSB 2082 2081 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 2080 CS# SCLK Data Byte 2 7 SI 6 5 4 3 Data Byte 3 2 1 0 MSB 7 6 5 4 3 2 Data Byte 256 1 0 MSB 7 6 5 4 3 2 MSB Figure 58. 4 x I/O Page Program (4PP4B) Sequence (SPI Mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Mode 0 Data Data Data Data Byte 2 Byte 3 Byte 4 Byte 4 8 Address cycle A0 4 0 4 0 4 0 4 0 SIO1 A29 A25 A21 A17 A13 A9 A5 A1 5 1 5 1 5 1 5 1 SIO2 A30 A26 A22 A18 A14 A10 A6 A2 6 2 6 2 6 2 6 2 SIO3 A31 A27 A23 A19 A15 A11 A7 A3 7 3 7 3 7 3 7 3 SIO0 P/N: PM2244 Command 3Eh A28 A24 A20 A16 A12 A8 A4 62 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-21. Performance Enhance Mode The device could waive the command cycle bits if the two cycle bits after address cycle toggles. Performance enhance mode is supported in both SPI and QPI mode. In QPI mode, “EBh” "ECh" "EDh" "EEh" and SPI “EBh” "ECh" "EDh" "EEh" commands support enhance mode. The performance enhance mode is not supported in dual I/O mode. To enter performance-enhancing mode, P[7:4] must be toggling with P[3:0]; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh can make this mode continue and skip the next 4READ instruction. To leave enhance mode, P[7:4] is no longer toggling with P[3:0]; likewise P[7:0]=FFh, 00h, AAh or 55h along with CS# is afterwards raised and then lowered. Issuing ”FFh” data cycle can also exit enhance mode. The system then will leave performance enhance mode and return to normal operation. After entering enhance mode, following CS# go high, the device will stay in the read mode and treat CS# go low of the first clock as address instead of command cycle. Another sequence of issuing 4READ instruction especially useful in random access is : CS# goes low→sending 4 READ instruction→3-bytes or 4-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 →performance enhance toggling bit P[7:0]→ 4 dummy cycles (Default) →data out still CS# goes high → CS# goes low (reduce 4 Read instruction) → 3-bytes or 4-bytes random access address. P/N: PM2244 63 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 59. 4 x I/O Read Performance Enhance Mode Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 n SCLK Mode 0 Data Out 2 Data Out n A20 A16 A12 A8 A4 A0 P4 P0 D4 D0 D4 D0 D4 D0 SIO1 A21 A17 A13 A9 A5 A1 P5 P1 D5 D1 D5 D1 D5 D1 SIO2 A22 A18 A14 A10 A6 A2 P6 P2 D6 D2 D6 D2 D6 D2 SIO3 A23 A19 A15 A11 A7 A3 P7 P3 D7 D3 D7 D3 D7 D3 Command 6 ADD Cycles (Note 2) Data Out 1 Performance enhance indicator (Note 1) Configurable Dummy Cycle (Note 2) EBh SIO0 CS# n+1 ........... n+7 ...... n+9 ........... n+13 ........... Mode 3 SCLK 6 ADD Cycles (Note 2) Performance enhance indicator (Note 1) Data Out 1 Data Out 2 Data Out n Mode 0 Configurable Dummy Cycle (Note 2) SIO0 A20 A16 A12 A8 A4 A0 P4 P0 D4 D0 D4 D0 D4 D0 SIO1 A21 A17 A13 A9 A5 A1 P5 P1 D5 D1 D5 D1 D5 D1 SIO2 A22 A18 A14 A10 A6 A2 P6 P2 D6 D2 D6 D2 D6 D2 SIO3 A23 A19 A15 A11 A7 A3 P7 P3 D7 D3 D7 D3 D7 D3 Notes: 1. If not using performance enhance recommend to keep 1 or 0 in performance enhance indicator. Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF. 2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. 3. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2244 64 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 60. 4 x I/O Read Performance Enhance Mode Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 A20A23 A16A19 A12A15 5 6 7 A4A7 A0A3 8 9 10 11 12 13 14 15 16 17 H0 L0 H1 L1 SCLK Mode 0 SIO[3:0] EBh A8A11 X X X X MSB LSB MSB LSB P(7:4) P(3:0) Data In Data Out performance enhance indicator Configurable Dummy Cycle (Note 1) CS# n+1 ............. SCLK Mode 0 SIO[3:0] A20A23 A16A19 A12A15 A8A11 A4A7 A0A3 X X X 6 Address cycles (Note) X H0 L0 H1 L1 MSB LSB MSB LSB P(7:4) P(3:0) Data Out performance enhance indicator Configurable Dummy Cycle (Note 1) Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. 2. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. 3. Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF. P/N: PM2244 65 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 61. 4 x I/O DT Read Performance Enhance Mode Sequence (SPI Mode) CS# Mode 3 SCLK Mode 0 0 7 8 9 10 11 16 … 17 18 … Command n … Performance Enhance Indicator 3 ADD Cycles Configurable Dummy Cycle A20 A16 … A4 A0 P4 P0 D4 D0 D4 D0 … D4 D0 SIO1 A21 A17 … A5 A1 P5 P1 D5 D1 D5 D1 … D5 D1 SIO2 A22 A18 … A6 A2 P6 P2 D6 D2 D6 D2 … D6 D2 SIO3 A23 A19 … A7 A3 P7 P3 D7 D3 D7 D3 … D7 D3 SIO0 EDh CS# n+1 …… n+4 Mode 3 SCLK … 3 ADD Cycles Mode 0 Performance Enhance Indicator Configurable Dummy Cycle SIO0 A20 A16 … A4 A0 P4 P0 D4 D0 D4 D0 SIO1 A21 A17 … A5 A1 P5 P1 D5 D1 D5 D1 SIO2 A22 A18 … A6 A2 P6 P2 D6 D2 D6 D2 SIO3 A23 A19 … A7 A3 P7 P3 D7 D3 D7 D3 Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. 2. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. 3. Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF. P/N: PM2244 66 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 62. 4 x I/O DT Read Performance Enhance Mode Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 10 SCLK 11 12 … Mode 0 Command 3 ADD Cycles n … Performance Enhance Indicator Configurable Dummy Cycle SIO[3:0] A20 | A23 EDh A16 | A19 A12 | A15 A8 | A11 A0 | A3 A4 | A7 P1 P0 H0 L0 H1 L1 … Hn Ln CS# … n+1 … n+4 SCLK Mode 3 … 3 ADD Cycles Mode 0 Performance Enhance Indicator Configurable Dummy Cycle SIO[3:0] A20 | A23 A16 | A19 A12 | A15 A8 | A11 A4 | A7 A0 | A3 P1 P0 H0 L0 H1 L1 Notes: 1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit7 (DC0 & DC1) setting in configuration register. 2. Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. 3. Reset the performance enhance mode, if P1=P0, ex: AA, 00, FF. P/N: PM2244 67 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-22. Burst Read To set the Burst length, following command operation is required to issue command: “C0h” in the first Byte (8-clocks), following 4 clocks defining wrap around enable with “0h” and disable with“1h”. The next 4 clocks are to define wrap around depth. Their definitions are as the following table: Data 00h 01h 02h 03h 1xh Wrap Around Yes Yes Yes Yes No Wrap Depth 8-byte 16-byte 32-byte 64-byte X The wrap around unit is defined within the 256Byte page, with random initial address. It is defined as “wrap-around mode disable” for the default state of the device. To exit wrap around, it is required to issue another “C0h” command in which data=‘1xh”. Otherwise, wrap around status will be retained until power down or reset command. To change wrap around depth, it is requried to issue another “C0h” command in which data=“0xh”. QPI “EBh” "ECh" and SPI “EBh” "ECh" support wrap around feature after wrap around is enabled. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Figure 63. SPI Mode CS# Mode 3 0 1 2 3 4 5 6 7 8 9 D7 D6 10 11 12 13 14 15 SCLK Mode 0 SIO C0h D5 D4 D3 D2 D1 D0 Figure 64. QPI Mode CS# Mode 3 0 1 2 3 SCLK Mode 0 SIO[3:0] C0h H0 MSB L0 LSB Note: MSB=Most Significant Bit LSB=Least Significant Bit P/N: PM2244 68 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-23. Fast Boot The Fast Boot Feature provides the ability to automatically execute read operation after power on cycle or reset without any read instruction. A Fast Boot Register is provided on this device. It can enable the Fast Boot function and also define the number of delay cycles and start address (where boot code being transferred). Instruction WRFBR (write fast boot register) and ESFBR (erase fast boot register) can be used for the status configuration or alternation of the Fast Boot Register bit. RDFBR (read fast boot register) can be used to verify the program state of the Fast Boot Register. The default number of delay cycles is 13 cycles, and there is a 16bytes boundary address for the start of boot code access. When CS# starts to go low, data begins to output from default address after the delay cycles (default as 13 cycles). After CS# returns to go high, the device will go back to standard SPI mode and user can start to input command. In the fast boot data out process from CS# goes low to CS# goes high, a minimum of one byte must be output. Once Fast Boot feature has been enabled, the device will automatically start a read operation after power on cycle, reset command, or hardware reset operation. The fast Boot feature can support Single I/O and Quad I/O interface. If the QE bit of Status Register is “0”, the data is output by Single I/O interface. If the QE bit of Status Register is set to “1”, the data is output by Quad I/O interface. Fast Boot Register (FBR) Bits 31 to 4 Description FBSA (FastBoot Start Address) 3 x 2 to 1 FBSD (FastBoot Start Delay Cycle) 0 FBE (FastBoot Enable) Bit Status Default State 16 bytes boundary address for the start of boot FFFFFFF code access. 1 00: 7 delay cycles 01: 9 delay cycles 10: 11 delay cycles 11: 13 delay cycles 0=FastBoot is enabled. 1=FastBoot is not enabled. Type NonVolatile NonVolatile 11 NonVolatile 1 NonVolatile Note: If FBSD = 11, the maximum clock frequency is 133 MHz If FBSD = 10, the maximum clock frequency is 104 MHz If FBSD = 01, the maximum clock frequency is 84 MHz If FBSD = 00, the maximum clock frequency is 70 MHz P/N: PM2244 69 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 65. Fast Boot Sequence (QE=0) CS# Mode 3 0 - - - - - - n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 n+9 n+10 n+11n+12n+13n+14n+15 n SCLK Mode 0 Delay Cycles Don’t care or High Impedance SI Data Out 1 High Impedance SO 7 6 5 4 3 Data Out 2 2 1 0 MSB 7 6 5 4 3 2 MSB 1 0 7 MSB Note: If FBSD = 11, delay cycles is 13 and n is 12. If FBSD = 10, delay cycles is 11 and n is 10. If FBSD = 01, delay cycles is 9 and n is 8. If FBSD = 00, delay cycles is 7 and n is 6. Figure 66. Fast Boot Sequence (QE=1) CS# Mode 3 0 - - - - - - - n n+1 n+2 n+3 n+5 n+6 n+7 n+8 n+9 SCLK Mode 0 SIO0 SIO1 SIO2 SIO3 Delay Cycles Data Data Out 1 Out 2 High Impedance High Impedance High Impedance High Impedance Data Out 3 Data Out 4 4 0 4 0 4 0 4 0 4 5 1 5 1 5 1 5 1 5 6 2 6 2 6 2 6 2 6 7 3 7 3 7 3 7 3 7 MSB Note: If FBSD = 11, delay cycles is 13 and n is 12. If FBSD = 10, delay cycles is 11 and n is 10. If FBSD = 01, delay cycles is 9 and n is 8. If FBSD = 00, delay cycles is 7 and n is 6. P/N: PM2244 70 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 67. Read Fast Boot Register (RDFBR) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 37 38 39 40 41 SCLK Mode 0 Command SI 16h Data Out 1 High-Z SO 7 6 Data Out 2 5 26 25 24 7 6 MSB MSB Figure 68. Write Fast Boot Register (WRFBR) Sequence CS# 0 Mode 3 1 2 3 4 5 6 7 8 9 10 37 38 39 SCLK Mode 0 Command SI Fast Boot Register 17h 7 6 5 26 25 24 MSB High-Z SO Figure 69. Erase Fast Boot Register (ESFBR) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 SCLK Mode 0 SI SO P/N: PM2244 Command 18h High-Z 71 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-24. Sector Erase (SE) The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the Sector Erase (SE). Any address of the sector (Please refer to "5. MEMORY ORGANIZATION") is a valid address for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of the address byte been latched-in); otherwise, the instruction will be rejected and not executed. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. Address bits [Am-A12] (Am is the most significant address) select the sector address. To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing SE instruction is: CS# goes low→ sending SE instruction code→ 3-byte or 4-byte address on SI→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets 1 during the tSE timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Sector Erase (SE) instruction will not be executed on the block. Figure 70. Sector Erase (SE) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Mode 0 24-Bit Address (Note) Command SI 20h A23 A22 A2 A1 A0 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. Figure 71. Sector Erase (SE) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 A4A7 A0A3 SCLK Mode 0 24-Bit Address (Note) Command SIO[3:0] 20h A20- A16- A12- A8A23 A19 A15 A11 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2244 72 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-25. Block Erase (BE32K) The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used for 32K-byte block erase operation. A Write Enable (WREN) instruction be executed to set the Write Enable Latch (WEL) bit before sending the Block Erase (BE32K). Any address of the block (Please refer to "5. MEMORY ORGANIZATION") is a valid address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed. Address bits [Am-A15] (Am is the most significant address) select the 32KB block address. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing BE32K instruction is: CS# goes low→ sending BE32K instruction code→ 3-byte or 4-byte address on SI→CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while during the Block Erase cycle is in progress. The WIP sets during the tBE32K timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Block Erase (BE32K) instruction will not be executed on the block. Figure 72. Block Erase 32KB (BE32K) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Mode 0 Command SI 24-Bit Address (Note) 52h A23 A22 A2 A1 A0 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. Figure 73. Block Erase 32KB (BE32K) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 A4A7 A0A3 SCLK Mode 0 24-Bit Address (Note) Command SIO[3:0] 52h A20- A16- A12A23 A19 A15 A8A11 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2244 73 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-26. Block Erase (BE) The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used for 64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Block Erase (BE). Any address of the block (Please refer to "5. MEMORY ORGANIZATION") is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 3-byte or 4-byte address on SI→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Block Erase (BE) instruction will not be executed on the block. Figure 74. Block Erase (BE) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 29 30 31 SCLK Mode 0 Command SI 24-Bit Address (Note) D8h A23 A22 A2 A1 A0 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. Figure 75. Block Erase (BE) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 A4A7 A0A3 SCLK Mode 0 24-Bit Address (Note) Command SIO[3:0] D8h A20- A16- A12- A8A23 A19 A15 A11 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2244 74 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-27. Chip Erase (CE) The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS# must go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed. The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. When the chip is under "Block protect (BP) Mode" (WPSEL=0). The Chip Erase (CE) instruction will not be executed, if one (or more) sector is protected by BP3-BP0 bits. It will be only executed when BP3-BP0 all set to "0". When the chip is under "Advances Sector Protect Mode" (WPSEL=1). The Chip Erase (CE) instruction will be executed on unprotected block. The protected Block will be skipped. If one (or more) 4K byte sector was protected in top or bottom 64K byte block, the protected block will also skip the chip erase command. Figure 76. Chip Erase (CE) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 SCLK Mode 0 Command SI 60h or C7h Figure 77. Chip Erase (CE) Sequence (QPI Mode) CS# Mode 3 0 1 SCLK Mode 0 SIO[3:0] P/N: PM2244 Command 60h or C7h 75 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-28. Page Program (PP) The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The device programs only the last 256 data bytes sent to the device. If the entire 256 data bytes are going to be programmed, A7-A0 (The eight least significant address bits) should be set to 0. The last address byte (the 8 least significant address bits, A7-A0) should be set to 0 for 256 bytes page program. If A7-A0 are not all zero, transmitted data that exceed page length are programmed from the starting address (24-bit address that last 8 bit are all 0) of currently selected page. If the data bytes sent to the device exceeds 256, the last 256 data byte is programmed at the request page and previous data will be disregarded. If the data bytes sent to the device has not exceeded 256, the data will be programmed at the request address of the page. There will be no effort on the other data bytes of the same page. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte or 4-byte address on SI→ at least 1-byte on data on SI→ CS# goes high. The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be executed. The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Page Program (PP) instruction will not be executed. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. P/N: PM2244 76 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 78. Page Program (PP) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 SCLK 1 0 7 6 5 3 2 1 0 2079 2 2078 3 2077 23 22 21 02h SI Data Byte 1 24-Bit Address (Note) 2076 Command 2075 Mode 0 4 1 0 MSB MSB 2074 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2073 2072 CS# SCLK Data Byte 2 7 SI 6 5 4 3 2 Data Byte 3 1 MSB 0 7 6 5 4 3 2 Data Byte 256 1 7 0 MSB 6 5 4 3 2 MSB Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. Figure 79. Page Program (PP) Sequence (QPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 H0 L0 SCLK Mode 0 Command SIO[3:0] 02h Data In 24-Bit Address (Note) A20A23 A16A19 A12A15 A8A11 A4A7 A0A3 H1 L1 H2 L2 H3 L3 Data Byte Data Byte Data Byte Data Byte 1 2 3 4 H255 L255 ...... Data Byte 256 Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2244 77 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-29. 4 x I/O Page Program (4PP) The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to "1" before sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1, SIO2, and SIO3 as address and data input, which can improve programmer performance and the effectiveness of application. The other function descriptions are as same as standard page program. The default read mode is 3-byte address, to access higher address (4-byte address) which requires to enter the 4-byte address read mode or to define EAR bit. To enter the 4-byte address mode, please refer to the enter 4-byte mode (EN4B) Mode section. The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 3-byte or 4-byte address on SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high. If the page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Quad Page Program (4PP) instruction will not be executed. Figure 80. 4 x I/O Page Program (4PP) Sequence (SPI Mode only) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 SCLK Mode 0 Command Data Data Data Data Byte 1 Byte 2 Byte 3 Byte 4 6 Address cycle A0 4 0 4 0 4 0 4 0 SIO1 A21 A17 A13 A9 A5 A1 5 1 5 1 5 1 5 1 SIO2 A22 A18 A14 A10 A6 A2 6 2 6 2 6 2 6 2 SIO3 A23 A19 A15 A11 A7 A3 7 3 7 3 7 3 7 3 SIO0 38h A20 A16 A12 A8 A4 Note: Please note the address cycles above are based on 3-byte address mode. For 4-byte address mode, the address cycles will be increased. P/N: PM2244 78 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-30. Deep Power-down (DP) The Deep Power-down (DP) instruction is for setting the device to minimum power consumption (the standby current is reduced from ISB1 to ISB2). The Deep Power-down mode requires the Deep Power-down (DP) instruction to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase instruction are ignored. When CS# goes high, it's only in deep power-down mode not standby mode. It's different from Standby mode. The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP) and Read Electronic Signature (RES) instruction and softreset command. (those instructions allow the ID being reading out). When Power-down, or software reset command the deep power-down mode automatically stops, and when power-up, the device automatically is in standby mode. For DP instruction the CS# must go high exactly at the byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed. As soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode. Figure 81. Deep Power-down (DP) Sequence (SPI Mode) CS# 0 Mode 3 1 2 3 4 5 6 tDP 7 SCLK Mode 0 Command B9h SI Stand-by Mode Deep Power-down Mode Figure 82. Deep Power-down (DP) Sequence (QPI Mode) CS# Mode 3 0 1 tDP SCLK Mode 0 Command SIO[3:0] B9h Stand-by Mode P/N: PM2244 79 Deep Power-down Mode REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-31. Enter Secured OTP (ENSO) The ENSO instruction is for entering the additional 8K-bit secured OTP mode. While device is in secured OTPmode, main array access is not available. The additional 8K-bit secured OTP is independent from main array and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated again once it is lock-down. The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP mode→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. Please note that after issuing ENSO command user can only access secure OTP region with standard read or program procedure. Furthermore, once security OTP is lock down, only read related commands are valid. 10-32. Exit Secured OTP (EXSO) The EXSO instruction is for exiting the secured OTP mode. The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP mode→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. 10-33. Read Security Register (RDSCUR) The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read at any time (even in program/erase/write status register/write security register condition) and continuously. The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register data out on SO→ CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. 10-34. Write Security Register (WRSCUR) The WRSCUR instruction is for changing the values of Security Register Bits. The WREN (Write Enable) instruction is required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO bit) for customer to lock-down the Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area cannot be updated any more. The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed. P/N: PM2244 80 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-35. Write Protection Selection (WPSEL) There are two write protection methods provided on this device, (1) Block Lock (BP) protection mode (2) Advanced Sector protection mode. If WPSEL=0, flash is under BP protection mode. If WPSEL=1, flash is under Advanced Sector protection mode. The default value of WPSEL is “0”. WPSEL command can be used to set WPSEL=1. Please note that WPSEL is an OTP bit. Once WPSEL is set to 1, there is no chance to recovery WPSEL back to “0”. If the flash is put on BP mode, the Advanced Sector protection mode is disabled. Contrarily, if flash is on the Advanced Sector protection mode, the BP mode is disabled. Every time after the system is powered-on, and the Security Register bit 7 is checked to be WPSEL=1, all the blocks or sectors will be write protected by Dynamic Protected Bit (DPB) in default. User may only unlock the blocks or sectors via GBULK instruction. Program or erase functions can only be operated after the Unlock instruction is conducted. When WPSEL = 0: Block Lock (BP) protection mode, Array is protected by BP3~BP0 and BP bits are protected by “SRWD=1 and WP#=0”, where SRWD is bit 7 of status register that can be set by WRSR command. When WPSEL =1: Advanced Sector protection mode, Blocks are individually protected by their own SPB or DPB lock bits which are set to “1” after power up. When the system accepts and executes WPSEL instruction, the bit 7 in security register will be set. It will activate WRLR, RDLR, WRSPB, ESSPB, WRDPB, RDDPB, GBLK, GBULK etc instructions to conduct block lock protection and replace the original Software Protect Mode (SPM) use (BP3~BP0) indicated block methods. Under the Advanced Sector protection mode (WPSEL=1), hardware protection is performed by driving WP#=0. Once WP#=0 all array blocks/sectors are protected regardless of the contents of SPB or DPB lock bits. The sequence of issuing WPSEL instruction is: CS# goes low → sending WPSEL instruction to enter the individual block protect mode → CS# goes high. Write Protection Selection Start (Default in BP Mode) WPSEL=1 Set WPSEL Bit Individual Sector Protection P/N: PM2244 WPSEL=0 Block Protection (BP) 81 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 83. WPSEL Flow start WREN command RDSCUR command Yes WPSEL=1? No WPSEL disable, block protected by BP[3:0] WPSEL command RDSR command WIP=0? No Yes RDSCUR command WPSEL=1? No Yes WPSEL set successfully WPSEL set fail WPSEL enable. Block protected by Advance Sector Protection P/N: PM2244 82 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-36. Advanced Sector Protection There are two ways to implement software Advanced Sector Protection on this device. Through these two protection methods, user can disable or enable the programming or erasing operation to any individual sector or all sectors. There is a non-volatile (SPB) and volatile (DPB) protection bit related to the single sector in main flash array. Each of the sectors is protected from programming or erasing operation when the bit is set. The figure below helps describing an overview of these methods. The device is default to the Solid mode when shipped from factory. The detail algorithm of advanced sector protection is shown as follows: Figure 84. Advanced Sector Protection Overview Start Set SPB Lock Bit ? SPBLKDN# = 0 SPB Lock bit locked All SPB can not be changeable SPBLKDN# = 1 SPB Lock bit Unlocked SPB is changeable SPB Access Register (SPB) Dynamic Protect Bit Register (DPB) DPB=1 sector protect Sector Array SPB=1 Write Protect SPB=0 Write Unprotect DPB=0 sector unprotect P/N: PM2244 DPB 0 SA 0 SPB 0 DPB 1 SA 1 SPB 1 DPB 2 SA 2 SPB 2 : : : : : : DPB N-1 SA N-1 SPB N-1 DPB N SA N SPB N 83 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-36-1. Lock Register The Lock Register is a 16-bit one-time programmable register. Lock Register bit [6] is SPB Lock Down Bit (SPBLKDN#) which is an unique bit assigned to control all SPB bit status. When SPBLKDN is 1, SPB can be changed. When it is locked as 0, all SPB can not be changed anymore, and SPBLKDN bit itself can not be altered anymore, either. The Lock Register is programmed using the WRLR (Write Lock Register) command. A WREN command must be executed to set the WEL bit before sending the WRLR command. Lock Register Bits Field Name Function Type Default State 15 to 7 RFU Reserved OTP 1 6 SPBLKDN# SPB Lock Down OTP 1 5 to 0 RFU Reserved OTP 1 Description Reserved for Future Use 1 = SPB changeable 0 = freeze SPB Reserved for Future Use Figure 85. Read Lock Register (RDLR) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Mode 0 command 2Dh SI Register Out High-Z SO 7 6 5 4 3 2 Register Out 1 0 15 14 13 12 11 10 9 7 8 MSB MSB Figure 86. Write Lock Register (WRLR) Sequence (SPI Mode) CS# Mode 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK Mode 0 SI SO P/N: PM2244 Command 2Ch High-Z Lock Register In 7 6 5 4 3 2 1 0 15 14 13 12 11 10 9 8 MSB 84 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-36-2. Solid Protection Bits The Solid write Protection bit (SPB) is a nonvolatile bit with the same endurances as the Flash memory. It is assigned to each sector individually. When a SPB is set to “1”, the associated sector may be protected, preventing any program or erase operation on this sector. The SPB bits are set individually by WRSPB command. However, it cannot be cleared individually. Issuing the ESSPB command will erase all SPB in the same time. To unprotect a protected sector (corresponding SPB cleared to “0”), the SPB lock bit must be unlocked first. A reset or a power-up cycle can unlock the SPB lock bit. After the SPB lock bit unlocked, the SPB status can be changed for desired settings. To lock the Solid Protection Bits after the modification has finished, the SPB Lock Bit must be set once again. To verify the programming state of the SPB for a given sector, issuing a RDSPB Command to the device is required. Note: 1. Once SPB Lock Bit is set, its program or erase command will not be executed and time-out without programming or erasing the SPB. SPB Register Bit Description 7 to 0 SPB (Solid protected Bit) P/N: PM2244 Bit Status 00h= SPB for the sector address unprotected FFh= SPB for the sector address protected 85 Default Type 00h Non-volatile REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 87. Read SPB Status (RDSPB) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Mode 0 Command SI 32-Bit Address E2h A31 A30 A2 A1 A0 MSB Data Out High-Z SO 7 6 5 4 3 2 1 0 MSB Figure 88. SPB Erase (ESSPB) Sequence CS# 1 0 Mode 3 2 3 4 5 6 7 SCLK Mode 0 Command SI E4h High-Z SO Figure 89. SPB Program (WRSPB) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 9 37 38 39 SCLK Mode 0 SI Command 32-Bit Address E3h A31 A30 A2 A1 A0 MSB P/N: PM2244 86 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-36-3. Dynamic Write Protection Bits The Dynamic Protection features a volatile type protection to each individual sector. It can protect sectors from unintentional change, and is easy to disable when there are necessary changes. All DPBs are default as protected (FFh) after reset or upon power up cycle. Via setting up Dynamic Protection bit (DPB) by write DPB command (WRDPB), user can cancel the Dynamic Protection of associated sector. The Dynamic Protection only works on those unprotected sectors whose SPBs are cleared. After the DPB state is cleared to “0”, the sector can be modified if the SPB state is unprotected state. DPB Register Bit Description 7 to 0 DPB (Dynamic protected Bit) Bit Status Default 00h= DPB for the sector address unprotected FFh FFh= DPB for the sector address protected Type Volatile Figure 90. Read DPB Register (RDDPB) Sequence CS# 0 Mode 3 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Mode 0 Command SI 32-Bit Address E0h A31 A30 A2 A1 A0 MSB Data Out High-Z SO 7 6 5 4 3 2 1 0 MSB Figure 91. Write DPB Register (WRDPB) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Mode 0 SI Command E1h A31 A30 A2 A1 A0 MSB P/N: PM2244 Data Byte 1 32-Bit Address 7 6 5 4 3 2 1 0 MSB 87 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-36-4. Gang Block Lock/Unlock (GBLK/GBULK) These instructions are only effective after WPSEL was executed. The GBLK/GBULK instruction is a chip-based protected or unprotected operation. It can enable or disable all DPB. The WREN (Write Enable) instruction is required before issuing GBLK/GBULK instruction. The sequence of issuing GBLK/GBULK instruction is: CS# goes low → send GBLK/GBULK (7Eh/98h) instruction →CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed. 10-36-5. Sector Protection States Summary Table Protection Status DPB bit SPB bit 0 0 0 1 1 0 1 1 P/N: PM2244 Sector State Unprotect Protect Protect Protect 88 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-37. Program Suspend and Erase Suspend The Suspend instruction interrupts a Program or Erase operation to allow the device conduct other operations. After the device has entered the suspended state, the memory array can be read except for the page being programmed or the sector being erased. Security Register bit 2 (PSB) and bit 3 (ESB) can be read to check the suspend status. The PSB (Program Suspend Bit) sets to “1” when a program operation is suspended. The ESB (Erase Suspend Bit) sets to “1” when an erase operation is suspended. The PSB or ESB clears to “0” when the program or erase operation is resumed. When the serial flash receives the Suspend instruction, Program Suspend Latency(tPSL) or Erase Suspend latency(tESL) is required to complete suspend operation. (Refer to "Table 23. AC CHARACTERISTICS") After the device has entered the suspended state, the WEL bit is clears to “0” and the PSB or ESB in security register is set to “1”, then the device is ready to acceptanother command. However, some commands can be executed without tPSL or tESL latency during the program/erase suspend, and can be issued at any time during the Suspend. Please refer to "Table 13. Acceptable Commands During Suspend". Figure 92. Suspend to Read Latency tPSL / tESL CS# Suspend Command Read Command 10-37-1. Erase Suspend to Program The “Erase Suspend to Program” feature allows Page Programming while an erase operation is suspended. Page Programming is permitted in any unprotected memory except within the sector of a suspended Sector Erase operation or within the block of a suspended Block Erase operation. The Write Enable (WREN) instruction must be issued before any Page Program instruction. A Page Program operation initiated within a suspended erase cannot itself be suspended and must be allowed to finish before the suspended erase can be resumed. The Status Register can be polled to determine the status of the Page Program operation. The WEL and WIP bits of the Status Register will remain “1” while the Page Program operation is in progress and will both clear to “0” when the Page Program operation completes. Figure 93. Suspend to Program Latency CS# P/N: PM2244 Suspend Command tPSL / tESL 89 Program Command REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Table 13. Acceptable Commands During Suspend Command Name Command Code Suspend Type Program Suspend Erase Suspend 03h 0Bh BBh 3Bh EBh 6Bh ECh EDh EEh 0Ch BCh 3Ch 5Ah 9Fh AFh C0h B1h C1h 06h 30h 2Dh E2h 16h E0h 35h F5h • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 04h 05h 15h 2Bh ABh 90h 66h 99h 00h • • • • • • • • • • • • • • • • • • Commands which require tPSL/tESL delay READ FAST READ 2READ DREAD 4READ QREAD 4READ4B 4DTRD 4DTRD4B FASTREAD4B 2READ4B DREAD4B RDSFDP RDID QPIID SBL ENSO EXSO WREN RESUME RDLR RDSPB RDFBR RDDPB EQIO RSTQIO Commands not required tPSL/tESL delay WRDI RDSR RDCR RDSCUR RES REMS RSTEN RST NOP P/N: PM2244 90 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-38. Program Resume and Erase Resume The Resume instruction resumes a suspended Program or Erase operation. After the device receives the Resume instruction, the WEL and WIP bits are set to “1” and the PSB or ESB is cleared to “0”.The program or erase operation will continue until it is completed or until another Suspend instruction is received. To issue another Suspend instruction, the minimum resume-to-suspend latency (tPRS or tERS) is required. However, in order to finish the program or erase progress, a period equal to or longer than the typical timing is required. To issue other command except suspend instruction, a latency of the self-timed Page Program Cycle time (tPP) or Sector Erase (tSE) is required. The WEL and WIP bits are cleared to “0” after the Program or Erase operation is completed. Note: The Resume instruction will be ignored during Performance Enhance Mode. Make sure the serial flash has exited the Performance Enhance Mode before issuing the Resume instruction. Figure 94. Resume to Read Latency CS# Resume Command tSE / tBE / tPP Read Command Figure 95. Resume to Suspend Latency CS# P/N: PM2244 Resume Command tPRS / tERS 91 Suspend Command REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 10-39. No Operation (NOP) The “No Operation” command is only able to terminate the Reset Enable (RSTEN) command and will not affect any other command. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care during SPI mode. 10-40. Software Reset (Reset-Enable (RSTEN) and Reset (RST)) The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command and Reset (RST) command. It returns the device to standby mode. All the volatile bits and settings will be cleared then, which makes the device return to the default status as power on. To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will be invalid. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. If the Reset command is executed during program or erase operation, the operation will be disabled, the data under processing could be damaged or lost. The reset time is different depending on the last operation. For details, please refer to "Table 19. Reset Timing(Other Operation)" for tREADY2. P/N: PM2244 92 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 96. Software Reset Recovery Stand-by Mode 66 CS# 99 tREADY2 Mode Note: Refer to "Table 19. Reset Timing-(Other Operation)" for tREADY2. Figure 97. Reset Sequence (SPI mode) tSHSL CS# SCLK Mode 3 Mode 3 Mode 0 Mode 0 Command Command 99h 66h SIO0 Figure 98. Reset Sequence (QPI mode) tSHSL CS# MODE 3 MODE 3 MODE 3 SCLK MODE 0 SIO[3:0] P/N: PM2244 Command MODE 0 66h Command MODE 0 99h 93 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 11. Serial Flash Discoverable Parameter (SFDP) 11-1.Read SFDP Mode (RDSFDP) The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on CFI. The sequence of issuing RDSFDP instruction is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP operation can use CS# to high at any time during data out. SFDP is a JEDEC standard, JESD216B. Figure 99. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI SO 24 BIT ADDRESS 23 22 21 5Ah 3 2 1 0 High-Z CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Cycle SI 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 SO 7 6 5 3 2 1 0 7 MSB MSB P/N: PM2244 4 94 6 5 4 3 2 1 0 7 MSB REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Table 14. Signature and Parameter Identification Data Values SFDP Table (JESD216B) below is for MX25U51245GMI0A, MX25U51245GXDI0A and MX25U51245GZ2I0A Description SFDP Signature Comment Fixed: 50444653h Add (h) DW Add Data (h/b) Data (Byte) (Bit) (Note1) (h) 00h 07:00 53h 53h 01h 15:08 46h 46h 02h 23:16 44h 44h 03h 31:24 50h 50h SFDP Minor Revision Number Start from 00h 04h 07:00 06h 06h SFDP Major Revision Number Start from 01h This number is 0-based. Therefore, 0 indicates 1 parameter header. 05h 15:08 01h 01h 06h 23:16 02h 02h 07h 31:24 FFh FFh 00h: it indicates a JEDEC specified header. 08h 07:00 00h 00h Number of Parameter Headers Unused ID number (JEDEC) Parameter Table Minor Revision Number Parameter Table Major Revision Number Parameter Table Length (in double word) Start from 00h 09h 15:08 06h 06h Start from 01h 0Ah 23:16 01h 01h How many DWORDs in the Parameter table 0Bh 31:24 10h 10h 0Ch 07:00 30h 30h Parameter Table Pointer (PTP) First address of JEDEC Flash Parameter table 0Dh 15:08 00h 00h 0Eh 23:16 00h 00h 0Fh 31:24 FFh FFh Unused P/N: PM2244 95 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G SFDP Table below is for MX25U51245GMI0A, MX25U51245GXDI0A and MX25U51245GZ2I0A Description ID number (Macronix manufacturer ID) Parameter Table Minor Revision Number Parameter Table Major Revision Number Parameter Table Length (in double word) Parameter Table Pointer (PTP) Comment it indicates Macronix manufacturer ID 10h 07:00 C2h C2h Start from 00h 11h 15:08 00h 00h Start from 01h 12h 23:16 01h 01h How many DWORDs in the Parameter table 13h 31:24 04h 04h 14h 07:00 10h 10h 15h 15:08 01h 01h 16h 23:16 00h 00h 17h 31:24 FFh FFh 4-byte Address Instruction parameter ID 18h 07:00 84h 84h Start from 00h 19h 15:08 00h 00h Start from 01h 1Ah 23:16 01h 01h How many DWORDs in the Parameter table 1Bh 31:24 02h 02h 1Ch 07:00 C0h C0h 1Dh 15:08 00h 00h 1Eh 23:16 00h 00h 1Fh 31:24 FFh FFh First address of Macronix Flash Parameter table Unused ID number (4-byte Address Instruction) Parameter Table Minor Revision Number Parameter Table Major Revision Number Parameter Table Length (in double word) Parameter Table Pointer (PTP) First address of 4-byte Address Instruction table Unused P/N: PM2244 Add (h) DW Add Data (h/b) Data (Byte) (Bit) (Note1) (h) 96 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Table 15. Parameter Table (0): JEDEC Flash Parameter Tables SFDP Table below is for MX25U51245GMI0A, MX25U51245GXDI0A and MX25U51245GZ2I0A Description Comment Block/Sector Erase sizes 00: Reserved, 01: 4KB erase, 10: Reserved, 11: not supported 4KB erase Write Granularity 0: 1Byte, 1: 64Byte or larger Write Enable Instruction Required 0: not required 1: required 00h to be written to the for Writing to Volatile Status status register Registers Add (h) DW Add Data (h/b) (Byte) (Bit) (Note1) 01b 02 1b 03 0b 30h 0: use 50h instruction 1: use 06h instruction Write Enable Instruction Select for Note: If target flash status register is Writing to Volatile Status Registers nonvolatile, then bits 3 and 4 must be set to 00b. Contains 111b and can never be Unused changed 4KB Erase Instruction 01:00 31h E5h 04 0b 07:05 111b 15:08 20h (1-1-2) Fast Read (Note2) 0=not supported 1=supported 16 1b Address Bytes Number used in addressing flash array Double Transfer Rate (DTR) Clocking 00: 3Byte only, 01: 3 or 4Byte, 10: 4Byte only, 11: Reserved 18:17 01b 0=not supported 1=supported 19 1b 20 1b 32h Data (h) 20h FBh (1-2-2) Fast Read 0=not supported 1=supported (1-4-4) Fast Read 0=not supported 1=supported 21 1b (1-1-4) Fast Read 0=not supported 1=supported 22 1b 23 1b 33h 31:24 FFh 37h:34h 31:00 1FFF FFFFh Unused Unused Flash Memory Density (1-4-4) Fast Read Number of Wait states (Note3) (1-4-4) Fast Read Number of Mode Bits (Note4) 0 0000b: Not supported; 0 0100b: 4 0 0110b: 6; 0 1000b: 8 Mode Bits: 000b: Not supported; 010b: 2 bits (1-4-4) Fast Read Instruction (1-1-4) Fast Read Number of Wait states (1-1-4) Fast Read Number of Mode Bits 39h 0 0000b: Not supported; 0 0100b: 4 0 0110b: 6; 0 1000b: 8 Mode Bits: 000b: Not supported; 010b: 2 bits (1-1-4) Fast Read Instruction P/N: PM2244 38h 3Ah 3Bh 97 04:00 0 0100b 07:05 010b 15:08 EBh 20:16 0 1000b 23:21 000b 31:24 6Bh FFh 44h EBh 08h 6Bh REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G SFDP Table below is for MX25U51245GMI0A, MX25U51245GXDI0A and MX25U51245GZ2I0A Description Comment (1-1-2) Fast Read Number of Wait states (1-1-2) Fast Read Number of Mode Bits 0 0000b: Not supported; 0 0100b: 4 0 0110b: 6; 0 1000b: 8 Mode Bits: 000b: Not supported; 010b: 2 bits (1-1-2) Fast Read Instruction (1-2-2) Fast Read Number of Wait states (1-2-2) Fast Read Number of Mode Bits 0 0000b: Not supported; 0 0100b: 4 0 0110b: 6; 0 1000b: 8 Mode Bits: 000b: Not supported; 010b: 2 bits 3Eh 3Fh 0=not supported 1=supported Unused (4-4-4) Fast Read 3Ch 3Dh (1-2-2) Fast Read Instruction (2-2-2) Fast Read Add (h) DW Add Data (h/b) (Byte) (Bit) (Note1) 0=not supported 1=supported 40h Unused 04:00 0 1000b 07:05 000b 15:08 3Bh 20:16 0 0100b 23:21 000b 31:24 BBh 00 0b 03:01 111b 04 1b 07:05 111b Data (h) 08h 3Bh 04h BBh FEh Unused 43h:41h 31:08 FFh FFh Unused 45h:44h 15:00 FFh FFh 20:16 0 0000b 23:21 000b 47h 31:24 FFh FFh 49h:48h 15:00 FFh FFh 20:16 0 0100b 23:21 010b 4Bh 31:24 EBh EBh 4Ch 07:00 0Ch 0Ch 4Dh 15:08 20h 20h 4Eh 23:16 0Fh 0Fh 4Fh 31:24 52h 52h 50h 07:00 10h 10h 51h 15:08 D8h D8h 52h 23:16 00h 00h 53h 31:24 FFh FFh (2-2-2) Fast Read Number of Wait states (2-2-2) Fast Read Number of Mode Bits 0 0000b: Not supported; 0 0100b: 4 0 0110b: 6; 0 1000b: 8 Mode Bits: 000b: Not supported; 010b: 2 bits (2-2-2) Fast Read Instruction Unused (4-4-4) Fast Read Number of Wait states (4-4-4) Fast Read Number of Mode Bits 0 0000b: Not supported; 0 0100b: 4 0 0110b: 6; 0 1000b: 8 Mode Bits: 000b: Not supported; 010b: 2 bits (4-4-4) Fast Read Instruction Erase Type 1 Size Sector/block size = 2^N bytes (Note5) 0Ch: 4KB; 0Fh: 32KB; 10h: 64KB Erase Type 1 Erase Instruction Erase Type 2 Size Sector/block size = 2^N bytes 00h: N/A; 0Fh: 32KB; 10h: 64KB Erase Type 2 Erase Instruction Erase Type 3 Size Sector/block size = 2^N bytes 00h: N/A; 0Fh: 32KB; 10h: 64KB Erase Type 3 Erase Instruction Erase Type 4 Size 00h: N/A, This sector type doesn't exist Erase Type 4 Erase Instruction P/N: PM2244 98 46h 4Ah 00h 44h REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G SFDP Table below is for MX25U51245GMI0A, MX25U51245GXDI0A and MX25U51245GZ2I0A Description Add (h) DW Add (Byte) (Bit) Comment Multiplier value: 0h~Fh (0~15) Multiplier from typical erase time Max. time = 2 * (Multiplier + 1) * to maximum erase time Typical Time Erase Type 1 Erase Time (Typical) EraseType 2 Erase Time (Typical) Erase Type 3 Erase Time (Typical) Erase Type 4 Erase Time (Typical) Multiplier from typical time to max time for Page or byte program Page Program Size Page Program Time (Typical) Byte Program Time, First Byte (Typical) Byte Program Time, Additional Byte (Typical) P/N: PM2244 Data (h/b) (Note1) 03:00 0011b 07:04 08 1 1101b 10:09 00b Count value: 00h~1Fh (0~31) Typical Time = (Count + 1) * Units 15:11 0 1001b Units 00: 1ms, 01: 16ms 10b: 128ms, 11b: 1s 17:16 01b 22:18 1 0001b 24:23 01b 29:25 0 0000b 31:30 00b 03:00 0001b 07:04 1000h 12:08 1 1111b 13 0b 15:14 17:16 0011b 18 1b 22:19 0000b 23 0b 54h Count value: 00h~1Fh (0~31) Typical Time = (Count + 1) * Units Units 00: 1ms, 01: 16ms 10b: 128ms, 11b: 1s 55h Count value: 00h~1Fh (0~31) Typical Time = (Count + 1) * Units Units 00: 1 ms, 01: 16 ms 10b: 128ms, 11b: 1s Count value: 00h~1Fh (0~31) Typical Time = (Count + 1) * Units Units 00: 1ms, 01: 16ms 10b: 128 ms, 11b: 1 s Multiplier value: 0h~Fh (0~15) Max. time = 2 * (Multiplier + 1) *Typical Time Page size = 2^N bytes 2^8 = 256 bytes, 8h = 1000b 56h 57h 58h Count value: 00h~1Fh (0~31) Typical Time = (Count + 1) * Units 59h Units 0: 8us, 1: 64us Count value: 0h~Fh (0~15) Typical Time = (Count + 1) * Units Units 0: 1us, 1: 8us Count value: 0h~Fh (0~15) Typical Time = (Count + 1) * Units Units 0: 1us, 1: 8us 99 5Ah Data (h) D3h 49h C5h 00h 81h DFh 04h REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G SFDP Table below is for MX25U51245GMI0A, MX25U51245GXDI0A and MX25U51245GZ2I0A Description Chip Erase Time (Typical) Reserved Prohibited Operations During Program Suspend Prohibited Operations During Erase Suspend Reserved Program Resume to Suspend Interval (Typical) Program Suspend Latency (Max.) Erase Resume to Suspend Interval (Typical) Erase Suspend Latency (Max.) Suspend / Resume supported Program Resume Instruction Program Suspend Instruction Erase Resume Instruction Erase Suspend Instruction P/N: PM2244 Comment Count value: 00h~1Fh (0~31) Typical Time = (Count + 1) * Units Units 00: 16ms, 01: 256ms 10: 4s, 11: 64s Reserved: 1b xxx0b: May not initiate a new erase anywhere xx0xb: May not initiate a new page program anywhere x1xxb: May not initiate a read in the program suspended page size 1xxxb: The erase and program restrictions in bits 1:0 are sufficient xxx0b: May not initiate a new erase anywhere xx1xb: May not initiate a page program in the erase suspended sector size xx0xb: May not initiate a page program anywhere x1xxb: May not initiate a read in the erase suspended sector size 1xxxb: The erase and program restrictions in bits 5:4 are sufficient Reserved: 1b Count value: 0h~Fh (0~15) Typical Time = (Count + 1) * 64us Count value: 00h~1Fh (0~31) Maximum Time = (Count + 1) * Units Units 00: 128ns, 01: 1us 10: 8us, 11: 64us Count value: 0h~Fh (0~15) Typical Time = (Count + 1) * 64us Count value: 00h~1Fh (0~31) Maximum Time = (Count + 1) * Units Units 00: 128ns, 01: 1us 10: 8us, 11: 64us 0= Support 1= Not supported Instruction to Resume a Program Instruction to Suspend a Program Instruction to Resume Write/Erase Instruction to Suspend Write/Erase 100 Add (h) DW Add (Byte) (Bit) 27:24 28 5Bh Data (h/b) (Note1) 0 0011b 30:29 11b 31 1b 03:00 0100b 5Ch 5Dh 5Eh 5Fh 60h 61h 62h 63h Data (h) E3h 44h 07:04 0100b 08 1b 12:09 0000b 15:13 17:16 1 1000b 19:18 01b 23:20 0000b 28:24 1 1000b 30:29 01b 31 07:00 15:08 23:16 31:24 0b 30h B0h 30h B0h 01h 07h 38h 30h B0h 30h B0h REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G SFDP Table below is for MX25U51245GMI0A, MX25U51245GXDI0A and MX25U51245GZ2I0A Description Comment Reserved Reserved: 11b Bit 2: Read WIP bit [0] by 05h Read instruction Status Register Polling Device Bit 3: Read bit 7 of Status Register Busy by 70h Read instruction (0=not supported 1=support) Bit 07:04, Reserved: 1111b Count value: 00h~1Fh (0~31) Release from Deep Power-down Maximum Time = (Count + 1) * Units Units (RDP) Delay 00: 128ns, 01: 1us (Max.) 10: 8us, 11: 64us Release from Deep Power-down Instruction to Exit Deep Power Down (RDP) Instruction Enter Deep Power Down Instruction to Enter Deep Power Instruction Down Deep Power Down Supported 0: Supported 1: Not supported Methods to exit 4-4-4 mode 4-4-4 Mode Disable Sequences xx1xb: issue F5h instruction Methods to enter 4-4-4 mode 4-4-4 Mode Enable Sequences x_x1xxb: issue instruction 35h Performance Enhance Mode, 0-4-4 Mode Supported Continuous Read, Execute in Place 0: Not supported 1: Supported xx_xxx1b: Mode Bits[7:0] = 00h will terminate this mode at the end of the current read operation. xx_xx1xb: If 3-Byte address active, input Fh on DQ0-DQ3 for 8 clocks. If 4-Byte address active, input Fh on DQ0-DQ3 for 10 0-4-4 Mode Exit Method clocks. xx_x1xxb: Reserved xx_1xxxb: Input Fh (mode bit reset) on DQ0-DQ3 for 8 clocks. x1_xxxxb: Mode Bit[7:0]≠Axh 1x_xxxxb: Reserved xxx1b: Mode Bits[7:0] = A5h Note: QE must be set prior to using this mode 0-4-4 Mode Entry Method x1xxb: Mode Bit[7:0]=Axh 1xxxb: Reserved 000b: No QE bit. Detects 1-1-4/1-4 4 reads based on instruction Quad Enable (QE) bit 010b: QE is bit 6 of Status Register. Requirements where 1=Quad Enable or 0=not Quad Enable 111b: Not Supported HOLD and RESET Disable by bit 0: Not supported 4 of Ext. Configuration Register P/N: PM2244 101 Add (h) DW Add (Byte) (Bit) 01:00 64h 65h 66h 67h 68h Data (h/b) (Note1) 11b 07:02 11 1101b 12:08 1 1101b 14:13 01b 15 22:16 23 30:24 31 1010 1011b (ABh) 1011 1001b (B9h) 0b 03:00 1010b 07:04 08 0 0100b 09 1b 69h Data (h) F7h BDh D5h 5Ch 4Ah 9Eh 15:10 10 0111b 19:16 1001h 6Ah 29h 22:20 010b 23 0b REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G SFDP Table below is for MX25U51245GMI0A, MX25U51245GXDI0A and MX25U51245GZ2I0A Description Add (h) DW Add (Byte) (Bit) Comment Reserved 6Bh xxx_xxx1b: Non-Volatile Status Register 1, powers-up to last Volatile or Non-Volatile Register written value, use instruction and Write Enable Instruction for 06h to enable write Status Register 1 x1x_xxxxb: Reserved 1xx_xxxxb: Reserved 6Ch Reserved Soft Reset and Rescue Sequence Support Exit 4-Byte Addressing P/N: PM2244 Return the device to its default power-on state x1_xxxxb: issue reset enable instruction 66h, then issue reset instruction 99h. xx_xxxx_xxx1b: issue instruction E9h to exit 4-Byte address mode (write enable instruction 06h is not required) xx_xxxx_x1xxb: 8-bit volatile extended address register used to define A[31:A24] bits. Read with instruction C8h. Write instruction is C5h, data length is 1 byte. Return to lowest memory segment by setting A[31:24] to 00h and use 3-Byte addressing. xx_xx1x_xxxxb: Hardware reset xx_x1xx_xxxxb: Software reset (see bits 13:8 in this DWORD) xx_1xxx_xxxxb: Power cycle x1_xxxx_xxxxb: Reserved 1x_xxxx_xxxxb: Reserved 102 6Dh 6Eh Data (h/b) (Note1) Data (h) 31:24 FFh FFh 06:00 111 0000b 07 1b 13:08 01 0000b 15:14 01b 23:16 1111 1001b F0h 50h F9h REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G SFDP Table below is for MX25U51245GMI0A, MX25U51245GXDI0A and MX25U51245GZ2I0A Description Enter 4-Byte Addressing P/N: PM2244 Comment xxxx_xxx1b: issue instruction B7h (preceding write enable not required) xxxx_x1xxb: 8-bit volatile extended address register used to define A[31:24] bits. Read with instruction C8h. Write instruction is C5h with 1 byte of data. Select the active 128 Mbit memory segment by setting the appropriate A[31:24] bits and use 3-Byte addressing. xx1x_xxxxb: Supports dedicated 4-Byte address instruction set. Consult vendor data sheet for the instruction set definition. 1xxx_xxxxb: Reserved 103 Add (h) DW Add (Byte) (Bit) 6Fh 31:24 Data (h/b) (Note1) Data (h) 1000 0101b 85h REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Table 16. Parameter Table (1): 4-Byte Instruction Tables SFDP Table below is for MX25U51245GMI0A, MX25U51245GXDI0A and MX25U51245GZ2I0A Description Support for (1-1-1) READ Command, Instruction=13h Support for (1-1-1) FAST_READ Command, Instruction=0Ch Support for (1-1-2) FAST_READ Command, Instruction=3Ch Support for (1-2-2) FAST_READ Command, Instruction=BCh Support for (1-1-4) FAST_READ Command, Instruction=6Ch Support for (1-4-4) FAST_READ Command, Instruction=ECh Support for (1-1-1) Page Program Command, Instruction=12h Support for (1-1-4) Page Program Command, Instruction=34h Support for (1-4-4) Page Program Command, Instruction=3Eh Support for Erase Command – Type 1 size, Instruction lookup in next Dword Support for Erase Command – Type 2 size, Instruction lookup in next Dword Support for Erase Command – Type 3 size, Instruction lookup in next Dword Support for Erase Command – Type 4 size, Instruction lookup in next Dword Support for (1-1-1) DTR_Read Command, Instruction=0Eh Support for (1-2-2) DTR_Read Command, Instruction=BEh Support for (1-4-4) DTR_Read Command, Instruction=EEh P/N: PM2244 Comment Add (h) DW Add Data (h/b) Data (Byte) (Bit) (Note1) (h) 0=not supported 1=supported 00 1b 0=not supported 1=supported 01 1b 0=not supported 1=supported 02 1b 03 1b 04 1b 0=not supported 1=supported 05 1b 0=not supported 1=supported 06 1b 0=not supported 1=supported 07 0b 0=not supported 1=supported 08 1b 0=not supported 1=supported 09 1b 0=not supported 1=supported 10 1b 11 1b 0=not supported 1=supported 12 0b 0=not supported 1=supported 13 0b 0=not supported 1=supported 14 0b 0=not supported 1=supported 15 1b 0=not supported 1=supported 0=not supported 1=supported 0=not supported 1=supported 104 C0h C1h 7Fh 8Fh REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G SFDP Table below is for MX25U51245GMI0A, MX25U51245GXDI0A and MX25U51245GZ2I0A Description Support for volatile individual sector lock Read command, Instruction=E0h Support for volatile individual sector lock Write command, Instruction=E1h Support for non-volatile individual sector lock read command, Instruction=E2h Support for non-volatile individual sector lock write command, Instruction=E3h Comment Add (h) DW Add Data (h/b) Data (Byte) (Bit) (Note1) (h) 0=not supported 1=supported 16 1b 0=not supported 1=supported 17 1b 18 1b 19 1b 23:20 1111b 0=not supported 1=supported C2h 0=not supported 1=supported FFh Reserved Reserved Reserved Reserved C3h 31:24 FFh FFh Instruction for Erase Type 1 FFh=not supported C4h 07:00 21h 21h Instruction for Erase Type 2 FFh=not supported C5h 15:08 5Ch 5Ch Instruction for Erase Type 3 FFh=not supported C6h 23:16 DCh DCh Instruction for Erase Type 4 FFh=not supported C7h 31:24 FFh FFh P/N: PM2244 105 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Table 17. Parameter Table (2): Macronix Flash Parameter Tables SFDP Table below is for MX25U51245GMI0A, MX25U51245GXDI0A and MX25U51245GZ2I0A Description Add (h) (Byte) Comment DW Add Data (h/b) (Bit) (Note1) Data (h) Vcc Supply Maximum Voltage 2000h=2.000V 2700h=2.700V 3600h=3.600V 111h:110h 07:00 15:08 00h 20h 00h 20h Vcc Supply Minimum Voltage 1650h=1.650V, 1750h=1.750V 2250h=2.250V, 2300h=2.300V 2350h=2.350V, 2650h=2.650V 2700h=2.700V 113h: 112h 23:16 31:24 50h 16h 50h 16h H/W Reset# pin 0=not supported 1=supported 00 1b H/W Hold# pin 0=not supported 1=supported 01 0b Deep Power Down Mode 0=not supported 1=supported 02 1b S/W Reset 0=not supported 1=supported 03 1b S/W Reset Instruction Reset Enable (66h) should be issued before Reset Instruction Program Suspend/Resume 0=not supported 1=supported 12 1b Erase Suspend/Resume 0=not supported 1=supported 13 1b 14 1b 15 1b 116h 23:16 C0h C0h 117h 31:24 64h 64h 115h: 114h Unused Wrap-Around Read mode 0=not supported 1=supported Wrap-Around Read mode Instruction 11:04 1001 1001b F99Dh (99h) Wrap-Around Read data length 08h:support 8B wrap-around read 16h:8B&16B 32h:8B&16B&32B 64h:8B&16B&32B&64B Individual block lock 0=not supported 1=supported 00 1b Individual block lock bit (Volatile/Nonvolatile) 0=Volatile 1=Nonvolatile 01 0b 09:02 1110 0001b (E1h) 10 0b 11 1b Individual block lock Instruction Individual block lock Volatile protect bit default protect status 0=protect 1=unprotect Secured OTP 0=not supported 1=supported Read Lock 0=not supported 1=supported 12 0b Permanent Lock 0=not supported 1=supported 13 0b Unused 15:14 11b Unused 31:16 FFh FFh 31:00 FFh FFh Unused P/N: PM2244 11Bh: 118h 11Fh: 11Ch 106 CB85h REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Note 1:h/b is hexadecimal or binary. Note 2:(x-y-z) means I/O mode nomenclature used to indicate the number of active pins used for the opcode (x), address (y), and data (z). At the present time, the only valid Read SFDP instruction modes are: (1-1-1), (2-2-2), and (4-4-4) Note 3:Wait States is required dummy clock cycles after the address bits or optional mode bits. Note 4:Mode Bits is optional control bits that follow the address bits. These bits are driven by the system controller if they are specified. (eg,read performance enhance toggling bits) Note 5:4KB=2^0Ch,32KB=2^0Fh,64KB=2^10h Note 6:All unused and undefined area data is blank FFh for SFDP Tables that are defined in Parameter Identification Header. All other areas beyond defined SFDP Table are reserved by Macronix. P/N: PM2244 107 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 12. RESET Driving the RESET# pin low for a period of tRLRH or longer will reset the device. After reset cycle, the device is at the following states: - Standby mode - All the volatile bits such as WEL/WIP/SRAM lock bit will return to the default status as power on. - 3-byte address mode If the device is under programming or erasing, driving the RESET# pin low will also terminate the operation and data could be lost. During the resetting cycle, the SO data becomes high impedance and the current will be reduced to minimum. Figure 100. RESET Timing CS# tRHSL SCLK tRH tRS RESET# tRLRH tREADY1 / tREADY2 Table 18. Reset Timing-(Power On) Symbol Parameter tRHSL Reset# high before CS# low tRS Reset# setup time tRH Reset# hold time tRLRH Reset# low pulse width tREADY1 Reset Recovery time Min. 10 15 15 10 35 Typ. Max. Unit us ns ns us us Min. 10 15 15 10 40 40 310 12 25 1000 40 Typ. Max. Unit us ns ns us us us us ms ms ms ms Table 19. Reset Timing-(Other Operation) Symbol tRHSL tRS tRH tRLRH Parameter Reset# high before CS# low Reset# setup time Reset# hold time Reset# low pulse width Reset Recovery time (During instruction decoding) Reset Recovery time (for read operation) Reset Recovery time (for program operation) tREADY2 Reset Recovery time(for SE4KB operation) Reset Recovery time (for BE64K/BE32KB operation) Reset Recovery time (for Chip Erase operation) Reset Recovery time (for WRSR operation) P/N: PM2244 108 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 13. POWER-ON STATE The device is at below states when power-up: - Standby mode (please note it is not deep power-down mode) - Write Enable Latch (WEL) bit is reset The device must not be selected during power-up and power-down stage unless the VCC achieves below correct level: - VCC minimum at power-up stage and then after a delay of tVSL - GND at power-down Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level. An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and the flash device has no response to any command. For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not guaranteed. The write, erase, and program command should be sent after the below time delay: - tVSL after VCC reached VCC minimum level The device can accept read command after VCC reached VCC minimum and a time delay of tVSL. Please refer to the "power-up timing". Note: - To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommended. (generally around 0.1uF) - At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response to any command. The data corruption might occur during the stage while a write, program, erase cycle is in progress. P/N: PM2244 109 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 14. ELECTRICAL SPECIFICATIONS Table 20. ABSOLUTE MAXIMUM RATINGS Rating Value Ambient Operating Temperature Industrial grade -40°C to 85°C Storage Temperature -65°C to 150°C Applied Input Voltage -0.5V to VCC+0.5V Applied Output Voltage -0.5V to VCC+0.5V VCC to Ground Potential -0.5V to 2.5V NOTICE: 1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. 2. Specifications contained within the following tables are subject to change. 3. During voltage transitions, all pins may overshoot to VCC+1.0V or -1.0V for period up to 20ns. Figure 102. Maximum Positive Overshoot Waveform Figure 101. Maximum Negative Overshoot Waveform 20ns 0V VCC+1.0V -1.0V 2.0V 20ns Table 21. CAPACITANCE TA = 25°C, f = 1.0 MHz Symbol Parameter CIN COUT P/N: PM2244 Min. Typ. Max. Unit Input Capacitance 8 pF VIN = 0V Output Capacitance 8 pF VOUT = 0V 110 Conditions REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 103. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL Input timing reference level 0.8VCC Output timing reference level 0.7VCC AC Measurement Level 0.3VCC 0.2VCC 0.5VCC Note: Input pulse rise and fall time are <1ns Figure 104. OUTPUT LOADING 25K ohm DEVICE UNDER TEST CL +1.8V 25K ohm CL=30pF Including jig capacitance P/N: PM2244 111 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Table 22. DC CHARACTERISTICS Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V Symbol Parameter Notes Min. Typ. Max. Units Test Conditions ILI Input Load Current 1 ±2 uA VCC = VCC Max, VIN = VCC or GND ILO Output Leakage Current 1 ±2 uA VCC = VCC Max, VOUT = VCC or GND ISB1 VCC Standby Current 1 20 180 uA VIN = VCC or GND, CS# = VCC ISB2 Deep Power-down Current 3 50 uA VIN = VCC or GND, CS# = VCC 25 35 mA f=100MHz, (DTR 4 x I/O read) SCLK=0.1VCC/0.9VCC, SO=Open 18 25 mA f=104MHz, (4 x I/O read) SCLK=0.1VCC/0.9VCC, SO=Open 13 16 mA f=84MHz, SCLK=0.1VCC/0.9VCC, SO=Open 30 40 mA 20 40 mA 1 30 40 mA Erase in Progress, CS#=VCC 1 20 40 mA Erase in Progress, CS#=VCC -0.4 0.3VCC V 0.7VCC VCC+0.4 V 0.2 V IOL = 100uA V IOH = -100uA ICC1 VCC Read (Note 3) VIL VCC Program Current (PP) VCC Write Status Register (WRSR) Current VCC Sector/Block (32K, 64K) Erase Current (SE/BE/BE32K) VCC Chip Erase Current (CE) Input Low Voltage VIH Input High Voltage VOL Output Low Voltage VOH Output High Voltage ICC2 ICC3 ICC4 ICC5 1 1 VCC-0.2 Program in Progress, CS# = VCC Program status register in progress, CS#=VCC Notes : 1. Typical values at VCC = 1.8V, T = 25°C. These currents are valid for all product versions (package and speeds). 2. Typical value is calculated by simulation. 3. Pattern = Blank P/N: PM2244 112 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Table 23. AC CHARACTERISTICS Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V Symbol fSCLK fRSCLK fTSCLK Alt. Parameter fC Clock Frequency for all commands(except Read Operation) fR Clock Frequency for READ instructions Clock Frequency for FAST READ, DREAD, 2READ, QREAD, 4READ, 4DTRD tCH(1) tCLH Clock High Time tCL(1) tCLL Clock Low Time Others (fSCLK) Normal Read (fRSCLK) Others (fSCLK) Normal Read (fRSCLK) tCLCH(2) Clock Rise Time (peak to peak) tCHCL(2) Clock Fall Time (peak to peak) tSLCH tCSS CS# Active Setup Time (relative to SCLK) tCHSL CS# Not Active Hold Time (relative to SCLK) tDVCH tDSU Data In Setup Time tCHDX tDH Data In Hold Time tCHSH CS# Active Hold Time (relative to SCLK) tSHCH CS# Not Active Setup Time (relative to SCLK) From Read to next Read tSHSL tCSH CS# Deselect Time From Write/Erase/Program to Read Status Register (2) tSHQZ tDIS Output Disable Time Loading: 30pF 24-BGA Loading: 15pF Loading: 10pF tCLQV tV Clock Low to Output Valid Loading: 30pF 16-SOP, Loading: 15pF 8-WSON Loading: 10pF tCLQX tHO Output Hold Time tWHSL(3) Write Protect Setup Time tSHWL(3) Write Protect Hold Time tDP(2) CS# High to Deep Power-down Mode CS# High to Standby Mode without Electronic Signature (2) tRES1 Read tRES2(2) CS# High to Standby Mode with Electronic Signature Read tW Write Status/Configuration Register Cycle Time tWREAW Write Extended Address Register tBP Byte-Program tPP Page Program Cycle Time tPP(5) Page Program Cycle Time (n bytes) tSE tBE32 tBE tCE Sector Erase Cycle Time Block Erase (32KB) Cycle Time Block Erase (64KB) Cycle Time Chip Erase Cycle Time P/N: PM2244 113 Min. D.C. Typ. Max. 133 66 see "Dummy Cycle and Frequency Table (MHz)" 45% x (1/ fSCLK) 7 45% x (1/ fSCLK) 7 0.1 0.1 3 4 2 2 3 3 7 30 Unit MHz MHz MHz ns ns ns ns V/ns V/ns ns ns ns ns ns ns ns ns 8 5 5 5 8 6 5 1 20 100 40 25 0.15 0.016 + 0.016* (n/16) (6) 25 150 220 150 10 ns ns ns ns ns ns ns ns ns ns us 30 us 30 40 60 0.75 us ms ns us ms 0.75 ms 200 1000 2000 300 ms ms ms s REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Symbol tESL(8) tPSL(8) tPRS(9) tERS(10) Alt. Parameter Erase Suspend Latency Program Suspend Latency Latency between Program Resume and next Suspend Latency between Erase Resume and next Suspend Min. Typ. 0.3 0.3 100 400 Max. Unit 25 us 25 us us us Notes: 1. tCH + tCL must be greater than or equal to 1/ Frequency. 2. Typical values given for TA=25°C. Not 100% tested. 3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1. 4. Test condition is shown as Figure 103 and Figure 104. 5. While programming consecutive bytes, Page Program instruction provides optimized timings by selecting to program the whole 256 bytes or only a few bytes between 1~256 bytes. 6. “n”=how many bytes to program. The number of (n/16) will be round up to next integer. In the formula, while n=1, byte program time=32us. While n=17, byte program time=48us. 7. By default dummy cycle value. Please refer to the "Table 1. Read performance Comparison". 8. Latency time is required to complete Erase/Program Suspend operation until WIP bit is "0". 9. For tPRS, minimum timing must be observed before issuing the next program suspend command. However, a period equal to or longer than the typical timing is required in order for the program operation to make progress. 10. For tERS, minimum timing must be observed before issuing the next erase suspend command. However, a period equal to or longer than the typical timing is required in order for the erase operation to make progress. P/N: PM2244 114 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 15. OPERATING CONDITIONS At Device Power-Up and Power-Down AC timing illustrated in Figure 105 and Figure 106 are for the supply voltages and the control signals at device power-up and power-down. If the timing in the figures is ignored, the device will not operate correctly. During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL. Figure 105. AC Timing at Device Power-Up VCC VCC(min) GND tVR tSHSL CS# tSLCH tCHSL tCHSH tSHCH SCLK tDVCH tCHCL tCHDX LSB IN MSB IN SI High Impedance SO Symbol tVR tCLCH Parameter VCC Rise Time Notes 1 Min. 20 Max. 500000 Unit us/V Notes : 1.Sampled, not 100% tested. 2.For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to Table 23. AC CHARACTERISTICS. P/N: PM2244 115 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 106. Power-Down Sequence During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation. VCC CS# SCLK Figure 107. Power-up Timing VCC VCC(max) Chip Selection is Not Allowed VCC(min) tVSL Device is fully accessible VWI time P/N: PM2244 116 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G Figure 108. Power Up/Down and Voltage Drop For Power-down to Power-up operation, the VCC of flash device must below VPWD for at least tPWD timing. Please check the table below for more detail. VCC VCC (max.) Chip Select is not allowed VCC (min.) V_keep tVSL Full Device Access Allowed VWI VPWD (max.) tPWD Time Table 24. Power-Up/Down Voltage and Timing Symbol tPWD Parameter VCC voltage needed to below VPWD for ensuring initialization will occur Voltage that a re-initialization is necessary if VDD drop below to VKEEP The minimum duration for ensuring initialization will occur tVSL VCC(min.) to device operation 3 tVR VCC Rise Time 20 500000 us/V VCC VCC Power Supply 1.65 2.0 V VWI Write Inhibit Voltage 1.0 1.5 V VPWD V_keep Min. Max. Unit 0.8 V 1.5 V 300 us ms 15-1.INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains 00h (all Status Register bits are 0). P/N: PM2244 117 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 16. ERASE AND PROGRAMMING PERFORMANCE Parameter Min. Typ. (1) Max. (2) Unit 40 ms Write Status Register Cycle Time Sector Erase Cycle Time (4KB) 25 200 ms Block Erase Cycle Time (32KB) 150 1000 ms Block Erase Cycle Time (64KB) 220 2000 ms Chip Erase Cycle Time 150 300 s Byte Program Time (via page program command) 25 60 us 0.15 0.75 ms Page Program Time Erase/Program Cycle 100,000 cycles Note: 1. Typical program and erase time assumes the following conditions: 25°C, 1.8V, and checkerboard pattern. 2. Under worst conditions of 85°C and 1.65V. 3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming command. 4. The maximum chip programming time is evaluated under the worst conditions of 0°C, VCC=1.8V, and 100K cycle with 90% confidence level. 17. DATA RETENTION Parameter Condition Min. Data retention 55˚C 20 Max. Unit years 18. LATCH-UP CHARACTERISTICS Min. Input Voltage with respect to GND on all power pins Max. 1.5 VCCmax Input current with respect to GND on all non-power pins -100mA +100mA Test conditions are compliant to JEDEC JDESD78 standard P/N: PM2244 118 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 19. ORDERING INFORMATION Please contact our regional sales for the latest product selection and available form factors. PART NO. TEMPERATURE PACKAGE MX25U51245GMI0A -40°C~85°C 16-SOP (300mil) MX25U51245GXDI0A -40°C~85°C 24-Ball BGA (5x5 ball array) MX25U51245GZ2I0A -40°C~85°C 8-WSON (8x6mm) P/N: PM2244 119 Remark REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 20. PART NAME DESCRIPTION MX 25 U 51245G M I 0A MODEL CODE: 0A: STR, x1 I/O enable TEMPERATURE RANGE: I: Industrial (-40°C to 85°C) PACKAGE: M: 16-SOP (300mil) XD: 24-Ball BGA (5x5 ball array) Z2: 8-WSON (8x6mm) DENSITY & MODE: 51245G: 512Mb TYPE: U: 1.8V DEVICE: 25: Serial NOR Flash P/N: PM2244 120 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 21. PACKAGE INFORMATION P/N: PM2244 121 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G P/N: PM2244 122 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G P/N: PM2244 123 REV. 0.03, MAR. 03, 2016 PRELIMINARY MX25U51245G 22. REVISION HISTORY Revision No. Description 0.01 1. Content correction 0.02 Page P13,24,30 1. Modified "Output Driver Strength Table" P27JUL/24/2015 2. Removed USPB function All 3. Updated suspend/resume descriptions. P91-93 4. Updated ISB1 & ISB2 P114 5. Modified "18. LATCH-UP CHARACTERISTICS"P120 6. Content correction P13,22,23 0.03 1. Changed Document status to "Preliminary" 2. Added 8-WSON (8x6mm) package 3. Added Ordering Information 4. Updated parameters for DC/AC Characteristics 5. Updated CIN & COUT value 6. Modified Min. VCC Power Supply from 1.7V to 1.65V 7. Updated VWI Max. spec 8. Content correction P/N: PM2244 Date MAY/22/2015 124 All MAR/03/2016 P6,8,119,120,123 P119,120 P112,113,118 P110 All P117 P8,28,34,64-67, P111,113,118 REV. 0.03, MAR. 03, 2016 MX25U51245G Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/ or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2015-2016. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Audio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. 125