MX25UM51245G MX25UM51245G 1.8V 512M-BIT [x 1/x 8] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY Key Features • Protocol Support - Single I/O and Octa I/O • Support DTR (Double Transfer Rate) Mode • Support clock frequency up to 200MHz REV. 1.0, MAR. 22, 2016 MX25UM51245G Contents 1. FEATURES............................................................................................................................................................... 5 2. GENERAL DESCRIPTION...................................................................................................................................... 7 Table 1. Operating Frequency Comparison.................................................................................................7 3. PIN CONFIGURATIONS .......................................................................................................................................... 8 Table 2. PIN DESCRIPTION........................................................................................................................8 4. BLOCK DIAGRAM.................................................................................................................................................... 9 5. MEMORY ORGANIZATION.................................................................................................................................... 10 6. DATA PROTECTION............................................................................................................................................... 11 6-1. Block lock protection................................................................................................................................. 12 Table 3. Protected Area Sizes....................................................................................................................12 6-2. Additional 8K-bit secured OTP ................................................................................................................. 13 Table 4. Secured OTP Definition................................................................................................................13 7. DEVICE OPERATION............................................................................................................................................. 14 8. COMMAND SET..................................................................................................................................................... 16 8-1. SPI Command Set.................................................................................................................................... 16 Table 5. Read/Write Array Commands (SPI - 3 Byte Address Command Set)..........................................16 Table 6. Read/Write Array Commands (SPI - 4 Byte Address Command Set)..........................................16 Table 7. Setting Commands (SPI)..............................................................................................................17 Table 8. Reset Commands (SPI)................................................................................................................17 Table 9. Register Commands (SPI)............................................................................................................18 8-2. OPI Command Set.................................................................................................................................... 19 Table 10. Read/Write Array Commands (OPI)...........................................................................................19 Table 11. Setting Commands (OPI)............................................................................................................20 Table 12. Reset Commands (OPI).............................................................................................................20 Table 13. Register Commands (OPI).........................................................................................................21 9. REGISTER DESCRIPTION..................................................................................................................................... 23 9-1. 9-2. 9-3. 9-4. Status Register......................................................................................................................................... 23 Configuration Register.............................................................................................................................. 24 Configuration Register 2........................................................................................................................... 25 Security Register...................................................................................................................................... 27 Table 14. Security Register Definition........................................................................................................27 10. COMMAND DESCRIPTION.................................................................................................................................. 28 10-1. Write Enable (WREN)............................................................................................................................... 28 10-2. Write Disable (WRDI)................................................................................................................................ 29 10-3. Read Identification (RDID)........................................................................................................................ 30 Table 15. ID Definitions .............................................................................................................................30 10-4. Read Status Register (RDSR).................................................................................................................. 31 10-5. Read Configuration Register (RDCR)....................................................................................................... 34 10-6. Write Status Register (WRSR) / Write Configuration Register (WRCR)................................................... 35 10-7. Read Configuration Register 2 (RDCR2).................................................................................................. 38 P/N: PM2183 2 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-8.Write Configuration Register 2 (WRCR2).................................................................................................. 39 10-9. Read Security Register (RDSCUR).......................................................................................................... 40 10-10.Write Security Register (WRSCUR).......................................................................................................... 41 10-11. Read Data Bytes (READ/READ3B/READ4B).......................................................................................... 42 10-12.Read Data Bytes at Higher Speed (FAST_READ/FAST_READ3B/FAST_READ4B).............................. 43 10-13.OCTA Read Mode (8READ)..................................................................................................................... 44 10-14.OCTA DTR Read Mode (8DTRD)............................................................................................................. 45 10-15.Preamble Bit............................................................................................................................................. 46 10-16.Burst Read................................................................................................................................................ 47 10-17.Fast Boot.................................................................................................................................................. 48 10-18.Sector Erase (SE/SE3B/SE4B)................................................................................................................ 53 10-19.Block Erase (BE/BE3B/BE4B).................................................................................................................. 54 10-20.Chip Erase (CE)........................................................................................................................................ 55 10-21.Page Program (PP/PP3B/PP4B).............................................................................................................. 56 10-22.Deep Power-down (DP)............................................................................................................................ 58 10-23.Release from Deep Power-down (RDP)................................................................................................... 59 10-24.Enter Secured OTP (ENSO)..................................................................................................................... 60 10-25.Exit Secured OTP (EXSO)........................................................................................................................ 60 10-26.Write Protection Selection (WPSEL)......................................................................................................... 61 10-27.Individual Sector Protection...................................................................................................................... 62 10-28.Program Suspend and Erase Suspend.................................................................................................... 72 Table 16. Acceptable Commands During Suspend...................................................................................73 10-29.Program Resume and Erase Resume...................................................................................................... 74 10-30.No Operation (NOP)................................................................................................................................. 75 10-31.Software Reset (Reset-Enable (RSTEN) and Reset (RST)).................................................................... 75 11. Serial Flash Discoverable Parameter (SFDP)................................................................................................... 77 11-1. Read SFDP Mode (RDSFDP)................................................................................................................... 77 Table 17. Signature and Parameter Identification Data Values (TBD).......................................................78 12. RESET.................................................................................................................................................................. 79 Table 18. Reset Timing-(Standby)..............................................................................................................79 Table 19. Reset Timing-(Other Operation).................................................................................................79 13. POWER-ON STATE.............................................................................................................................................. 80 14. ELECTRICAL SPECIFICATIONS......................................................................................................................... 81 Table 20. ABSOLUTE MAXIMUM RATINGS.............................................................................................81 Table 21. CAPACITANCE TA = 25°C, f = 1.0 MHz.....................................................................................81 Table 22. DC CHARACTERISTICS...........................................................................................................83 Table 23. AC CHARACTERISTICS............................................................................................................84 15. OPERATING CONDITIONS.................................................................................................................................. 86 Table 24. Power-Up/Down Voltage and Timing .........................................................................................88 15-1. INITIAL DELIVERY STATE....................................................................................................................... 88 P/N: PM2183 3 REV. 1.0, MAR. 22, 2016 MX25UM51245G 16. ERASE AND PROGRAMMING PERFORMANCE............................................................................................... 89 17. DATA RETENTION............................................................................................................................................... 89 18. LATCH-UP CHARACTERISTICS......................................................................................................................... 89 19. ORDERING INFORMATION................................................................................................................................. 90 20. PART NAME DESCRIPTION................................................................................................................................ 91 21. PACKAGE INFORMATION................................................................................................................................... 92 22. REVISION HISTORY ............................................................................................................................................ 94 P/N: PM2183 4 REV. 1.0, MAR. 22, 2016 MX25UM51245G 1.8V 512M-BIT [x 1/x 8] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY 1. FEATURES GENERAL • Supports Serial Peripheral Interface -- Mode 0 • Single Power Supply Operation - 1.65 to 2.0 volt for read, erase, and program operations • 512Mb: 536,870,912 x 1 bit structure or 67,108,846 x 8 bits (Octa I/O mode) structure • Protocol Support - Single I/O and Octa I/O - Support DTR (Double Transfer Rate) Mode • Latch-up protected to 100mA from -1V to Vcc +1V • Fast frequency support - Support clock frequency up to - Single I/O mode: 133MHz - Octa I/O mode: 200MHz - Configurable dummy cycle number for OPI read operation • Octa Peripheral Interface (OPI) available • Equal Sectors with 4K byte each, or Equal Blocks with 64K byte each - Any Block can be erased individually • Programming : - 256byte page buffer - Octa Input/Output page program to enhance program performance • Typical 100,000 erase/program cycles • 20 years data retention SOFTWARE FEATURES • Input Data Format - SPI: 1-byte command code - OPI: 2-byte command code • Advanced Security Features - Block lock protection The BP0-BP3 and T/B status bits define the size of the area to be protected against program and erase instructions - Individual Sector Protection (Solid Protect) • Additional 8K bit security OTP - Features unique identifier - Factory locked identifiable, and customer lockable • Command Reset • Program/Erase Suspend and Resume operation • Electronic Identification - JEDEC 1-byte manufacturer ID and 2-byte device ID • Support Serial Flash Discoverable Parameters (SFDP) mode P/N: PM2183 5 REV. 1.0, MAR. 22, 2016 MX25UM51245G HARDWARE FEATURES • SCLK Input - Serial clock input • SIO0 - SIO7 - Serial Data Input or Serial Data Output • DQS - Data strobe signal • RESET# - Hardware Reset pin • PACKAGE - 24-Ball BGA (5x5 ball array) - 16-Pin SOP -All devices are RoHS Compliant and Halogen Free. P/N: PM2183 6 REV. 1.0, MAR. 22, 2016 MX25UM51245G 2. GENERAL DESCRIPTION MX25UM51245G is 512Mb bits Serial NOR Flash memory, which is configured as 67,108,864 x 8 internally. MX25UM51245G feature a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input. The MX25UM51245G MXSMIO® (Serial Multi I/O) provides sequential read operation on whole chip. After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256 bytes) basis, or word basis. Erase command is executed on sector (4K-byte), or block (64K-byte), or whole chip basis. To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read command can be issued to detect completion status of a program or erase operation via WIP bit. When the device is not in operation and CS# is high, it is put in standby mode. The MX25UM51245G utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after 100,000 program and erase cycles. Table 1. Operating Frequency Comparison Numbers of Dummy Cycle 24-BGA 16-SOP 6 8 10 12 14 16 18 20 Octa I/O STR (MHz) 66 84 104 104 133 166 166 200* Octa I/O DTR (MHz) 66 84 104 104 133 166 166 200* Octa I/O STR (MHz) 66 84 104 104 133 133 133 133* Octa I/O DTR (MHz) 66 84 104 104 133 133 133 133* Notes: * means default status P/N: PM2183 7 REV. 1.0, MAR. 22, 2016 MX25UM51245G 3. PIN CONFIGURATIONS 16-PIN SOP (300mil) SIO3 VCC RESET# SIO7 SIO5 GND CS# SO/SIO1 1 2 3 4 5 6 7 8 Table 2. PIN DESCRIPTION 16 15 14 13 12 11 10 9 SYMBOL CS# SCLK RESET# DQS SCLK SI/SIO0 SIO4 DQS SIO6 VCC GND SIO2 SI/SIO0 SO/SIO1 24-BALL BGA (5x5 ball array) 1 2 3 4 5 SIO2-SIO7 VCC VCCQ GND VSSQ DNU NC A B C D E P/N: PM2183 NC NC RESET# DNU NC SCLK GND VCC NC VSSQ CS# DQS SIO2 NC VCCQ SIO1 SIO0 SIO3 SIO4 SIO7 SIO6 SIO5 VCCQ VSSQ DESCRIPTION Chip Select Clock Input Hardware Reset Pin Active lowNote 1 Data Strobe Signal Serial Data Input (for 1 x I/O)/ Serial Data Input & Output (for 8 x I/O read mode) Serial Data Output (for 1 x I/O)/ Serial Data Input & Output (for 8 x I/O read mode) Serial Data Input & Output (for 8 x I/O read mode) 1.8V Power Supply 1.8V Buffer Power Supply Ground IO Ground Supply Do not use No Connection Notes: 1. RESET# pin has internal pull up. 8 REV. 1.0, MAR. 22, 2016 MX25UM51245G 4. BLOCK DIAGRAM X-Decoder Address Generator SI/SIO0 SO/SIO1 SIO2 SIO3 SIO4 SIO5 SIO6 SIO7 RESET# CS# DQS SCLK Memory Array Y-Decoder Data Register Sense Amplifier SRAM Buffer Mode Logic State Machine HV Generator Clock Generator Output Buffer P/N: PM2183 9 REV. 1.0, MAR. 22, 2016 MX25UM51245G 5. MEMORY ORGANIZATION Address Range 3FFF000h … … 16383 3FF8FFFh 3FF7000h 3FF7FFFh 3FF0000h 3FF0FFFh 16367 3FEF000h 3FEFFFFh … 16360 3FE8000h 3FE8FFFh 16359 3FE7000h 3FE7FFFh … 3FE0000h 3FE0FFFh 16351 3FDF000h 3FDFFFFh … 16344 3FD8000h 3FD8FFFh 16343 3FD7000h 3FD7FFFh 16336 … … … 16352 … 1021 … … … 16368 … 1022 … 3FF8000h 16375 … 16376 … 1023 3FFFFFFh … Sector … Block(64K-byte) 3FD0000h 3FD0FFFh ∼ … 0028FFFh 027000h 0027FFFh 0020FFFh 001F000h 001FFFFh … 0018000h 0018FFFh 23 0017000h 0017FFFh P/N: PM2183 … … 24 000FFFFh 0008000h 0008FFFh 7 0007000h 0007FFFh … 8 … … 0010FFFh 000F000h … 0010000h 15 … 16 … 0 … 0020000h 31 … 32 … 1 … 0028000h 39 … 40 … 2 002FFFFh … 002F000h … 47 0 0000000h 0000FFFh 10 REV. 1.0, MAR. 22, 2016 MX25UM51245G 6. DATA PROTECTION During power transition, there may be some false system level signals which result in inadvertent erasure or programming. The device is designed to protect itself from these accidental write cycles. The state machine will be reset as standby mode automatically during power up. In addition, the control register architecture of the device constrains that the memory contents can only be changed after specific command sequences have completed successfully. In the following, there are several features to protect the system from the accidental write cycles during VCC powerup and power-down or from system noise. • Valid command length (SPI Mode) or command/command# combination (OPI Mode) will be check. • Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before other command to change data. • Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from writing all commands except Release from deep power down mode command (RDP), and softreset command. P/N: PM2183 11 REV. 1.0, MAR. 22, 2016 MX25UM51245G 6-1. Block lock protection - The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0 and T/B) bits to allow part of memory to be protected as read only. The protected area definition is shown as Table 3 Protected Area Sizes, the protected areas are more flexible which may protect various area by setting value of BP0-BP3 bits. Table 3. Protected Area Sizes Protected Area Sizes (T/B bit = 0) Status bit BP3 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 BP2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 BP1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 BP0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 Protect Level 512Mb 0 (none) 1 (1 block, protected block 1023rd) 2 (2 blocks, protected block 1022nd~1023rd) 3 (4 blocks, protected block 1020th~1023rd) 4 (8 blocks, protected block 1016th~1023rd) 5 (16 blocks, protected block 1008th~1023rd) 6 (32 blocks, protected block 992nd~1023rd) 7 (64 blocks, protected block 960th~1023rd) 8 (128 blocks, protected block 896th~1023rd) 9 (256 blocks, protected block 768th~1023rd) 10 (512 blocks, protected block 512th~1023rd) 11 (1024 blocks, protected all) 12 (1024 blocks, protected all) 13 (1024 blocks, protected all) 14 (1024 blocks, protected all) 15 (1024 blocks, protected all) Protected Area Sizes (T/B bit = 1) Status bit BP3 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 P/N: PM2183 BP2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 BP1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 Protect Level BP0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 512Mb 0 (none) 1 (1 block, protected block 0th) 2 (2 blocks, protected block 0th~1st) 3 (4 blocks, protected block 0th~3rd) 4 (8 blocks, protected block 0th~7th) 5 (16 blocks, protected block 0th~15th) 6 (32 blocks, protected block 0th~31st) 7 (64 blocks, protected block 0th~63rd) 8 (128 blocks, protected block 0th~127th) 9 (256 blocks, protected block 0th~255th) 10 (512 blocks, protected block 0th~511th) 11 (1024 blocks, protected all) 12 (1024 blocks, protected all) 13 (1024 blocks, protected all) 14 (1024 blocks, protected all) 15 (1024 blocks, protected all) 12 REV. 1.0, MAR. 22, 2016 MX25UM51245G 6-2. Additional 8K-bit secured OTP The secured OTP for unique identifier: to provide 8K-bit one-time program area for setting device unique serial number. Which may be set by factory or system customer. - Security register bit 0 indicates whether the chip is locked by factory or not. - To program the 8K-bit secured OTP by entering secured OTP mode (with Enter Security OTP command), and going through normal program procedure, and then exiting secured OTP mode by writing Exit Security OTP command. - Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register) command to set customer lock-down bit1 as "1". Please refer to "Table 14. Security Register Definition" for security register bit definition and "Table 4. Secured OTP Definition" for address range definition. - Note: Once lock-down by factory or customer, the corresponding range cannot be changed any more. While in secured OTP mode, array access is not allowed. Table 4. Secured OTP Definition Address range Size Lock-down xxx000~xxx1FF 4096-bit Determined by Customer xxx200~xxx3FF 4096-bit Determined by Factory P/N: PM2183 13 REV. 1.0, MAR. 22, 2016 MX25UM51245G 7. DEVICE OPERATION 1. Before a command is issued, status register should be checked to ensure device is ready for the intended operation. 2. When incorrect command# sequence is inputted to this device, this device becomes standby mode and keeps the standby mode until next CS# falling edge. In standby mode, SO pin of this device should be High-Z. 3. When correct command# sequence is inputted to this device, this device becomes active mode and keeps the active mode until next CS# rising edge. 4. When device under STR mode, input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK. When device under DTR mode, input data is latched on the both rising and falling edge of Serial Clock (SCLK) and data shifts out on both rising and falling edge of SCLK. 5.While a Write Status Register, Program or Erase operation is in progress, access to the memory array is neglected and not affect the current operation of Write Status Register, Program, Erase. Figure 1. Input Timing (STR mode) tSHSL CS# tCHSL tSLCH tCHSH tSHCH SCLK tDVCH tCHCL tCHDX tCLCH LSB MSB SIO Figure 2. Input Timing (DTR mode) tSHSL CS# tCHSL tSLCH tSHCH tCLSH SCLK tDVCH tCHDX SIO P/N: PM2183 tCHCL tCLDX tDVCL MSB tCLCH LSB 14 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 3. Output Timing (STR mode) CS# tCH SCLK tCLQV tCLQX tCL tCLQV tSHQZ tCLQX LSB SIO Figure 4. Output Timing (DTR mode) SCLK tCHQV DQS tCLQV tQSV tDQSQ tDQSQ tQH tQH SIO[7:0] P/N: PM2183 15 REV. 1.0, MAR. 22, 2016 MX25UM51245G 8. COMMAND SET 8-1. SPI Command Set Table 5. Read/Write Array Commands (SPI - 3 Byte Address Command Set) Command (byte) READ3B (normal read) FAST_READ3B (fast read data) PP3B (page program) SE3B (sector erase) Address Bytes 1st byte 3 03 (hex) 3 0B (hex) 3 02 (hex) 3 20 (hex) BE3B (block erase 64KB) 3 D8 (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 ADD3 to erase the selected sector to erase the selected block 5th byte 60 or C7 (hex) Dummy(8) Data Cycles Action CE (chip erase) 1-256 n bytes read out until CS# goes high n bytes read out until CS# goes high to program the selected page to erase whole chip Table 6. Read/Write Array Commands (SPI - 4 Byte Address Command Set) Address Bytes 4 4 4 4 BE4B (block erase 64KB) 4 1st byte 13 (hex) 0C (hex) 12 (hex) 21 (hex) DC (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 ADD3 5th byte ADD4 ADD4 ADD4 ADD4 ADD4 1-256 to program the selected page to erase the selected sector to erase the selected block Command (byte) READ4B (normal read) 6th byte FAST_READ4B (fast read data) P/N: PM2183 SE4B (sector erase) Dummy(8) Data Cycles Action PP4B (page program) n bytes read out until CS# goes high n bytes read out until CS# goes high 16 REV. 1.0, MAR. 22, 2016 MX25UM51245G Table 7. Setting Commands (SPI) Command (byte) WREN (write enable) WRDI (write disable) 1st byte 06 (hex) 04 (hex) PGM/ERS Suspend PGM/ERS Resume (Suspends Program/ (Resumes Program/ Erase) Erase) B0 (hex) 30 (hex) DP (Deep power down) B9 (hex) 2nd byte 3rd byte 4th byte 5th byte Data Cycles sets the (WEL) write resets the (WEL) enable latch bit write enable latch bit enters deep power down mode Action Command (byte) 1st byte RDP (Release from deep power down) AB (hex) SBL (Set Burst Length) C0 (hex) ENSO (enter secured OTP) B1 (hex) EXSO (exit secured OTP) C1 (hex) to enter the 8K-bit secured OTP mode to exit the 8K-bit secured OTP mode 2nd byte 3rd byte 4th byte 5th byte Data Cycles Action 1 release from deep power down mode to set Burst length Table 8. Reset Commands (SPI) Command (byte) 1st byte NOP (No Operation) 00 (hex) RSTEN (Reset Enable) 66 (hex)(Note 2) RST (Reset Memory) 99 (hex)(Note 2) 2nd byte 3rd byte 4th byte 5th byte Action P/N: PM2183 17 REV. 1.0, MAR. 22, 2016 MX25UM51245G Table 9. Register Commands (SPI) Command (byte) RDID (read identification) RDSFDP RDSR (read status register) 1st byte 9F (hex) 5A (hex) 05 (hex) 2nd byte RDCR (read configuration register) 15 (hex) WRSR (write status/ configuration register) 01 (hex) ADD1 RDCR 2 (read configuration register 2) 71 (hex) WRCR2 (Write configuration register 2 ) 72 (hex) ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD4 ADD4 1 1 WRLR (write Lock register) RDLR (read Lock register) 2C (hex) 2D (hex) 1 1 5th byte Data Cycles Action outputs JEDEC ID: 1-byte Manufacturer ID & 2-byte Device ID Read SFDP mode 1 1 to read out the to read out the values of the values of the status register configuration register RDFBR WRFBR ESFBR (read fast boot (write fast boot (erase fast register) register) boot register) Address Bytes 16 (hex) 17 (hex) Command (byte) 1st byte 1-2 to write new values of the status/ configuration register RDSCUR WRSCUR (read security (write security register) register) 18 (hex) 2B (hex) 2F (hex) 2nd byte 3rd byte 4th byte 5th byte 1-4 4 Data Cycles to read value to set the lockof security down bit as register "1" (once lockdown, cannot be updated) Action Address Bytes WRSPB (SPB bit program) 4 ESSPB (all SPB bit erase) 0 RDSPB (read SPB status) 4 WRDPB (write DPB register) 4 1st byte E3 (hex) E4 (hex) E2 (hex) E1 (hex) E0 (hex) 2nd byte ADD1 ADD1 ADD1 ADD1 3rd byte ADD2 ADD2 ADD2 ADD2 4th byte ADD3 ADD3 ADD3 ADD3 5th byte ADD4 ADD4 ADD4 ADD4 1 1 1 Command (byte) Data Cycles RDDPB WPSEL GBLK (read DPB (Write Protect (gang block register) Selection) lock) 4 0 68 (hex) 7E (hex) to enter and whole chip enable write protect individal block protect mode Action GBULK (gang block unlock) 0 98 (hex) whole chip unprotect Note 1: It is not recommended to adopt any other code/address not in the command definition table, which will potentially enter the hidden mode. Note 2: Before executing RST command, RSTEN command must be executed. If there is any other command to interfere, the reset operation will be disabled. Note 3: The number in parentheses after "ADD" or "Data" stands for how many clock cycles it has. For example, "Data(8)" represents there are 8 clock cycles for the data in. P/N: PM2183 18 REV. 1.0, MAR. 22, 2016 MX25UM51245G 8-2. OPI Command Set Table 10. Read/Write Array Commands (OPI) Command (byte) 1st byte 8READ (Octa IO Read) EC (hex) 8DTRD (Octa IO DT Read) EE (hex) RDID (read identification) 9F (hex) 2nd byte 13 (hex) 11 (hex) 60 (hex) A5 (hex) 3rd byte ADD1 ADD1 00h ADD1 4th byte ADD2 ADD2 00h ADD2 5th byte ADD3 ADD3 00h ADD3 6th byte ADD4 7th byte Dummy(Note 4) Data Cycles Octa I/O STR read Action ADD4 (Note 6) 00h Dummy(Note 4) RDSFDP 5A (hex) ADD4 Dummy(20) 3 (Note 8) Octa I/O DTR read outputs JEDEC ID: 1-byte Manufacturer ID & 2-byte Device ID Read SFDP mode Command (byte) 1st byte PP (page program) 12 (hex) SE (sector erase) 21 (hex) BE (block erase 64KB) DC (hex) CE (chip erase) 60 or C7 (hex) 2nd byte ED (hex) DE (hex) 23 (hex) 9F or 38 (hex) 3rd byte ADD1 ADD1 ADD1 4th byte ADD2 ADD2 ADD2 5th byte ADD3 ADD3 ADD3 6th byte ADD4(Note 6) ADD4 ADD4 7th byte Data Cycles Action P/N: PM2183 1-256 to program the selected page to erase the selected to erase the selected to erase whole chip sector block 19 REV. 1.0, MAR. 22, 2016 MX25UM51245G Table 11. Setting Commands (OPI) Command (byte) WREN (write enable) PGM/ERS Suspend PGM/ERS Resume (Suspends Program/ (Resumes Program/ Erase) Erase) B0 (hex) 30 (hex) WRDI (write disable) 1st byte 06 (hex) 04 (hex) 2nd byte F9 (hex) FB (hex) 4F (hex) CF (hex) DP (Deep power down) B9 (hex) 46 (hex) 3rd byte 4th byte 5th byte 6th byte 7th byte sets the (WEL) write resets the (WEL) enable latch bit write enable latch bit enters deep power down mode Data Cycles Command (byte) 1st byte RDP (Release from deep power down) AB (hex) SBL (Set Burst Length) C0 (hex) ENSO (enter secured OTP) B1 (hex) EXSO (exit secured OTP) C1 (hex) 2nd byte 54 (hex) 3F (hex) 4E (hex) 3E (hex) to enter the 8K-bit secured OTP mode to exit the 8K-bit secured OTP mode 3rd byte 00h 4th byte 00h 5th byte 00h 6th byte 00h 7th byte 1 Data Cycles release from deep power down mode to set Burst length Table 12. Reset Commands (OPI) Command (byte) 1st byte NOP (No Operation) 00 (hex) RSTEN (Reset Enable) 66 (hex)(Note 2) RST (Reset Memory) 99 (hex)(Note 2) 2nd byte FF (hex) 99 (hex) 66 (hex) 3rd byte 4th byte 5th byte 6th byte Data Cycles P/N: PM2183 20 REV. 1.0, MAR. 22, 2016 MX25UM51245G Table 13. Register Commands (OPI) Command (byte) RDSR (read status register) RDCR WRCR (write (read WRSR (write configuration configuration status register) register) register) 15 (hex) 01 (hex) 01 (hex) RDCR2 (read configuration register 2) 71 (hex) WRCR2 (Write configuration register 2 ) 72 (hex) RDFBR (read fast boot register) 1st byte 05 (hex) 2nd byte FA (hex) EA (hex) FE (hex) FE (hex) 8E (hex) 8D (hex) E9 (hex) 16 (hex) 3rd byte 00h 00h 00h 00h ADD1 ADD1 00h 4th byte 00h 00h 00h 00h ADD2 ADD2 00h 5th byte 00h 00h 00h 00h ADD3 ADD3 00h 00h 01h ADD4 ADD4 6th byte 00h 01h 7th byte Dummy(Note 5) Dummy(Note 5) Data bytes Action Command (byte) 1st byte 1 1 1 1 to read out the to read out the to write new to write new values of the values of the values of the values of the status register configuration status register configuration register register WRFBR ESFBR (write fast boot (erase fast register) boot register) 17 (hex) 18 (hex) E7 (hex) 00h Dummy(Note 5) RDSCUR WRSCUR (read security (write security register) register) 2B (hex) 2F (hex) 1 1-4(Note 8) WRLR (write Lock register) 2C (hex) RDLR (read Lock register) 2D (hex) WRSPB (SPB bit program) E3 (hex) D3 (hex) D2 (hex) 1C (hex) E8 (hex) 3rd byte 00h 00h 00h 00h ADD1 4th byte 00h 00h 00h 00h ADD2 5th byte 00h 00h 00h 00h ADD3 6th byte 00h 00h 00h 00h Dummy(Note 5) ADD4 1 1 Dummy 7th byte D0 (hex) 1 2nd byte Data bytes D4 (hex) Dummy(Note 5) (Note 5) 4 to read value to set the lockof security down bit as register "1" (once lockdown, cannot be updated) Action RDSPB (read SPB status) WRDPB (write DPB register) RDDPB (read DPB register) E4 (hex) E2 (hex) E1 (hex) E0 (hex) WPSEL (Write Protection Selection) 68 (hex) 1B (hex) 1D (hex) 1E (hex) 1F (hex) 97 (hex) Command (byte) ESSPB (all SPB bit erase) 1st byte 2nd byte 3rd byte ADD1 ADD1 ADD1 4th byte ADD2 ADD2 ADD2 5th byte ADD3 ADD3 ADD3 6th byte ADD4 ADD4 ADD4 7th byte Dummy(Note 4) Data bytes 1 GBULK (gang block unlock) 7E (hex) 98 (hex) 81 (hex) 67 (hex) Dummy(Note 4) 1 1 to enter and whole chip enable individal write protect block protect mode Action P/N: PM2183 GBLK (gang block lock) 21 whole chip unprotect REV. 1.0, MAR. 22, 2016 MX25UM51245G Note 1: It is not recommended to adopt any other code/address not in the command definition table, which will potentially enter the hidden mode. Note 2: Before executing RST command, RSTEN command must be executed. If there is any other command to interfere, the reset operation will be disabled. Note 3: The number in parentheses after "ADD" or "Data" stands for how many clock cycles it has. For example, "Data(8)" represents there are 8 clock cycles for the data in. Note 4: See dummy cycle and frequency table. Note 5: 4 dummy cycles in both STR/DTR. Note 6: The starting address must be even byte (A0 must be 0) in DTR OPI mode. Note 7: The address data must be 00h. Note 8: Data bytes are always output in STR. P/N: PM2183 22 REV. 1.0, MAR. 22, 2016 MX25UM51245G 9. REGISTER DESCRIPTION 9-1. Status Register The definition of the status register bits is as below: WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status register cycle. WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/ erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the device will not accept program/erase/write status register instruction. The program/erase command will be ignored if it is applied to a protected memory area. To ensure both WIP bit & WEL bit are both set to 0 and available for next program/erase/operations, WIP bit needs to be confirm to be 0 before polling WEL bit. After WIP bit confirmed, WEL bit needs to be confirm to be 0. BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area (as defined in Table 3) of the device to against the program/erase instruction without hardware protection mode being set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR) instruction to be executed. Those bits define the protected area of the memory to against Page Program (PP/PP3B/PP4B), Sector Erase (SE/SE3B/SE4B), Block Erase (BE/BE3B/BE4B) and Chip Erase (CE) instructions (only if Block Protect bits (BP3:BP0) set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is unprotected. Status Register bit7 Reserved bit6 Reserved bit5 BP3 (level of protected block) bit4 BP2 (level of protected block) bit3 BP1 (level of protected block) bit2 BP0 (level of protected block) Reserved Reserved (note 1) (note 1) (note 1) (note 1) Reserved Reserved Non-volatile bit Non-volatile bit Non-volatile bit Non-volatile bit bit1 bit0 WEL WIP (write enable (write in latch) progress bit) 1=write 1=write enable operation 0=not write 0=not in write enable operation volatile bit volatile bit Note 1: see the Table 3 "Protected Area Size". P/N: PM2183 23 REV. 1.0, MAR. 22, 2016 MX25UM51245G 9-2. Configuration Register The Configuration Register is able to change the default status of Flash memory. Flash memory will be configured after the CR bit is set. ODS bit The output driver strength (ODS2, ODS1, ODS0) bits are volatile bits, which indicate the output driver level (as defined in "Output Driver Strength Table") of the device. The Output Driver Strength is defaulted as 30 Ohms when delivered from factory. To write the ODS bits requires the Write Status Register (WRSR) instruction to be executed. TB bit The Top/Bottom (TB) bit is a non-volatile bit. The Top/Bottom (TB) bit is used to configure the Block Protect area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as “0”, which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory device. To write the TB bits requires the Write Status Register (WRSR) instruction to be executed. PBE bit The Preamble Bit Enable (PBE) bit is a volatile bit. It is used to enable or disable the preamble bit data pattern output on dummy cycles. The PBE bit is defaulted as “0”, which means preamble bit is disabled. When it is set as “1”, the preamble bit will be enabled, and inputted into dummy cycles. To write the PBE bits requires the Write Status Register (WRSR) instruction to be executed. Configuration Register bit7 bit6 bit5 Reserved Reserved Reserved x x x x x x bit4 bit3 bit2 bit1 bit0 PBE TB ODS 2 ODS 1 ODS 0 (Preamble bit (top/bottom (output driver (output driver (output driver Enable) selected) strength) strength) strength) 0=Top area 0=Disable protect 1=Bottom (Note 1) (Note 1) (Note 1) 1=Enable area protect (Default=0) volatile bit OTP volatile bit volatile bit volatile bit Note 1: see "Output Driver Strength Table" Output Driver Strength Table ODS2 0 0 0 0 1 1 1 1 P/N: PM2183 ODS1 0 0 1 1 0 0 1 1 ODS0 0 1 0 1 0 1 0 1 Description 146 Ohms 76 Ohms 52 Ohms 41 Ohms 34 Ohms 30 Ohms 26 Ohms 24 Ohms (Default) 24 Note Impedance at VCC/2 (Typical) REV. 1.0, MAR. 22, 2016 MX25UM51245G 9-3. Configuration Register 2 Address 00000000h 00000200h Bit Bit 7-2 Symbol x Description Reserved Bit 1 DOPI (1) DTR OPI Enable Bit 0 SOPI (1) STR OPI Enable Bit 7-4 Bit 3-2 x x Bit 1 DOS Bit 0 00000300h 00000500h 40000000h Reserved Reserved DQS on STR mode DQSPRC DTR DQS pre-cycle Bit 7-3 x Bit 2-0 DC Bit 7 Bit 6-5 Bit 4 Bit 3-1 x x x x Reserved Dummy cycle Reserved Reserved Reserved Reserved Preamable pattern Bit 0 PPTSEL selection Bit 7-4 x Reserved Bit 3 x Reserved Bit 2 x Reserved DEFDOPI# Enable DOPI after Bit 1 (1,2) power on reset DEFSOPI# Enable SOPI after Bit 0 (1,2) power on reset Define Reserved 00= SPI 01= STR OPI enable 10= DTR OPI enable 11= inhibit Reserved Reserved 0= Disable 1= Enable 0= 0 cycle 1= 1 cycle Reserved Refer to "Dummy Cycle and Frequency Table (MHz)" Reserved refer to "9-3-2. Preamable Pattern Select Bit Table" Reserved Reserved 00= inhibit 01= default DTR OPI mode 10= default STR OPI mode 11= default SPI mode Default x x x x Type x Volatile Bit Volatile Bit x x Volatile Bit Volatile Bit x Volatile Bit x x x x Volatile Bit x x x 1 OTP 1 OTP 0 0 x x 0 0 x 000 x x x x 0 Notes: 1. The default status of DOPI and SOPI reflect the DEFDOPI# and DEFSOPI# setting. For example, if DEFDOPI#/DEFSOPI# are 01, DOPI and SOPI value will change to 10 after next power on and default status of the device will be DTR OPI. 2. The default DEFDOPI# status depends on the device model selection. P/N: PM2183 25 REV. 1.0, MAR. 22, 2016 MX25UM51245G 9-3-1. Dummy Cycle and Frequency Table (MHz) DC [2:0] Numbers of Dummy Cycle 000(Default) 001 010 011 100 101 110 111 20 18 16 14 12 10 8 6 24-BGA Octa I/O STR Octa I/O DTR (MHz) (MHz) 200 200 166 166 166 166 133 133 104 104 104 104 84 84 66 66 9-3-2. Preamable Pattern Select Bit Table All SIOs (Except SIO3) Bit 0= 0 0011 0100 1001 1010 Bit 0= 1 0101 0101 0101 0101 P/N: PM2183 26 16-SOP Octa I/O STR Octa I/O DTR (MHz) (MHz) 133 133 133 133 133 133 133 133 104 104 104 104 84 84 66 66 SIO3 0011 0101 0001 0100 0101 0101 0101 0101 REV. 1.0, MAR. 22, 2016 MX25UM51245G 9-4. Security Register The definition of the Security Register bits is as below: Erase Fail bit. The Erase Fail bit is a status flag, which shows the status of last Erase operation. It will be set to "1", if the erase operation fails or the erase region is protected. It will be set to "0", if the last operation is successful. Please note that it will not interrupt or stop any operation in the flash memory. Program Fail bit. The Program Fail bit is a status flag, which shows the status of last Program operation. It will be set to "1", if the program operation fails or the program region is protected. It will be set to "0", if the last operation is successful. Please note that it will not interrupt or stop any operation in the flash memory. Erase Suspend bit. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is cleared to "0" after erase operation resumes. Program Suspend bit. Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB is cleared to "0" after program operation resumes. Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory or not. When it is "0", it indicates non-factory lock; "1" indicates factory-lock. Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 8K-bit Secured OTP area cannot be updated any more. While it is in 8K-bit secured OTP mode, main array access is not allowed. Table 14. Security Register Definition bit7 bit6 bit5 bit4 WPSEL E_FAIL P_FAIL Reserved 0=normal WP mode 1=individual mode (default=0) 0=normal Erase succeed 1=indicate Erase failed (default=0) 0=normal Program succeed 1=indicate Program failed (default=0) - 0=Erase is not suspended 1= Erase suspended (default=0) Non-volatile bit (OTP) Volatile bit Volatile bit - Volatile bit P/N: PM2183 bit3 bit2 ESB PSB (Erase (Program Suspend bit) Suspend bit) 27 bit1 bit0 LDSO Secured OTP (indicate if indicator bit lock-down) 0 = not lock0=Program down 0 = nonis not 1 = lock-down factory suspended (cannot lock 1= Program program/ 1 = factory suspended erase lock (default=0) OTP) Non-volatile Non-volatile Volatile bit bit bit (OTP) (Read only) REV. 1.0, MAR. 22, 2016 MX25UM51245G 10. COMMAND DESCRIPTION 10-1.Write Enable (WREN) The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP/ PP3B/PP4B, SE/SE3B/SE4B, BE/BE3B/BE4B, CE, WRSR, WRCR2, SBL, WRFBR, ESFBR, WRSCUR, WRLR, WSPB and ESSPB which are intended to change the device content WEL bit should be set every time after the WREN instruction setting the WEL bit. The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high. Figure 5. Write Enable (WREN) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 SCLK Command SI 06h High-Z SO Figure 6. Write Enable (WREN) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 06h F9h Figure 7. Write Enable (WREN) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2183 06h 28 F9h REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-2.Write Disable (WRDI) The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit. The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high. The WEL bit is reset by following situations: - Power-up - Reset# pin driven low - WRDI command completion - WRSR/WRCR/WRCR2 command completion - PP/PP3B/PP4B command completion - SE/SE3B/SE4B/BE/BE3B/BE4B/CE command completion - SBL command completion - PGM/ERS Suspend command completion - Softreset command completion - WRSCUR command completion - WRFBR/ESFBR command completion - WRLR/WSPB/ESSPB command completion - GBLK/GBULK command completion Figure 8. Write Disable (WRDI) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 SCLK Command SI 04h High-Z SO Figure 9. Write Disable (WRDI) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 04h FBh Figure 10. Write Disable (WRDI) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2183 04h 29 FBh REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-3.Read Identification (RDID) The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix Manufacturer ID and Device ID are listed as Table 15 ID Definitions. The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out on SO→ to end RDID operation can drive CS# to high at any time during data out. While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby stage. Table 15. ID Definitions RDID 9Fh Manufactory ID Memory type Memory density C2 80 3A Figure 11. Read Identification (RDID) Sequence (SPI mode) CS# 0 1 2 3 4 5 6 7 8 9 10 13 14 15 16 17 18 28 29 30 31 SCLK Command SI 9Fh Manufacturer Identification High-Z SO 7 6 5 2 1 MSB Device Identification 0 15 14 13 3 2 1 0 MSB Figure 12. Read Identification (RDID) Sequence (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 9Fh 60h 00 00 00 MID 00 Address Type Density Dummy Figure 13. Read Identification (RDID) Sequence (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 9Fh 60h 00 00 00 MID 00 Address P/N: PM2183 Type Density Dummy 30 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-4.Read Status Register (RDSR) The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before sending a new instruction when a program, erase, or write status register operation is in progress. The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data out on SO. Figure 14. Read Status Register (RDSR) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK command 05h SI Status Register Out High-Z SO 7 6 5 4 3 2 1 Status Register Out 0 7 6 5 4 3 2 1 0 7 MSB MSB Figure 15. Read Status Register (RDSR) Sequence (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 05h FAh 00 00 00 SR 00 Address SR Dummy Figure 16. Read Status Register (RDSR) Sequence (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 05h FAh 00 00 00 00 SR Address P/N: PM2183 SR Dummy 31 REV. 1.0, MAR. 22, 2016 MX25UM51245G For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows: Figure 17. Program/Erase flow with read array data start WREN command RDSR command* WEL=1? No Yes Program/erase command Write program data/address (Write erase address) RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0] Read array data (same address of PGM/ERS) No Verify OK? Yes Program/erase successfully Program/erase another block? Program/erase fail Yes * Issue RDSR to check BP[3:0]. No Program/erase completed P/N: PM2183 32 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 18. Program/Erase flow without read array data (read P_FAIL/E_FAIL flag) start WREN command RDSR command* WEL=1? No Yes Program/erase command Write program data/address (Write erase address) RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0] RDSCUR command Yes P_FAIL/E_FAIL =1 ? No Program/erase fail Program/erase successfully Program/erase another block? No Yes * Issue RDSR to check BP[3:0]. Program/erase completed P/N: PM2183 33 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-5.Read Configuration Register (RDCR) The RDCR instruction is for reading Configuration Register Bits. The Read Configuration Register can be read at any time (even in program/erase/write configuration register condition). The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Configuration Register data out on SO. Figure 19. Read Configuration Register (RDCR) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK command 15h SI Configuration register Out High-Z SO 7 6 5 4 3 2 1 0 Configuration register Out 7 6 5 4 3 2 1 0 7 MSB MSB Figure 20. Read Configuration Register (RDCR) (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 15h 00 EAh 00 00 01 CR Address CR Dummy Figure 21. Read Configuration Register (RDCR) (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 15h EAh 00 00 00 01 CR Address P/N: PM2183 CR Dummy 34 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-6.Write Status Register (WRSR) / Write Configuration Register (WRCR) The WRSR instruction is for changing the values of Status Register Bits and Configuration Register Bits. Before sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1, BP0) bits to define the protected area of memory (as shown in "Table 3. Protected Area Sizes"). The WRSR also can set or reset the Status Register Write Disable (SRWD) bit, but has no effect on bit1(WEL) and bit0 (WIP) of the status register. In SPI, CS# must go high exactly at the 8 bits or 16 bits data boundary; In DOPI, CS# must go high while clock is low; otherwise, the instruction will be rejected and not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress. The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL) bit is reset. Figure 22. Write Status Register (WRSR) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 SCLK command SI SO 01h High-Z Status Register In 7 6 5 4 3 2 Configuration Register In 1 0 15 14 13 12 11 10 9 8 MSB Note : The CS# must go high exactly at 8 bits or 16 bits data boundary to completed the write register command. P/N: PM2183 35 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 23. Write Status Register (WRSR) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 01h FEh 00 00 00 00 SR Figure 24. Write Status Register (WRSR) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] 01h 00 FEh 00 00 SR 00 Note: CS# must go high while SCLK is low. Figure 25. Write Configuration Register (WRCR) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 01h FEh 00 00 00 01 CR Figure 26. Write Configuration Register (WRCR) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] 01h FEh 00 00 00 01 CR Note: CS# must go high while SCLK is low. P/N: PM2183 36 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 27. WRSR flow start WREN command RDSR command WEL=1? No Yes WRSR command Write status register data RDSR command WIP=0? No Yes RDSR command Read WEL=0, BP[3:0] Verify OK? No Yes WRSR successfully P/N: PM2183 WRSR fail 37 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-7.Read Configuration Register 2 (RDCR2) The RDCR2 instruction is for reading Configuration Register 2. The Read Configuration Register 2 command would be rejected while Internal write operation is in progress (WIP=1). The sequence of issuing RDCR2 instruction is: CS# goes low→ sending RDCR2 instruction code→ Sending 4 byte address → Configuration Register 2 data out on SO. Figure 28. Read Configuration Register 2 (RDCR2) Sequence (SPI Mode) CS# SCLK command Address * 31 30 29 71h SI 3 2 1 0 MSB CR2 High-Z SO 7 6 5 4 3 CR2 2 1 0 7 MSB Note: * See "9-3. Configuration Register 2" for defining address . Figure 29. Read Configuration Register 2 (RDCR2) Sequence (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 71h 8Eh A[31:24] A[23:16] A[15:8] CR2 A[7:0] Address * CR2 Dummy Note: * See "9-3. Configuration Register 2" for defining address . Figure 30. Read Configuration Register 2 (RDCR2) (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 71h CR2 8Eh A[31:24] A[23:16] A[15:8] A[7:0] Address * CR2 Dummy Note: * See "9-3. Configuration Register 2" for defining address . P/N: PM2183 38 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-8.Write Configuration Register 2 (WRCR2) The WRCR2 instruction is for changing the values of Configuration Register 2. Before sending WRCR2 instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in advance. In SPI, CS# must go high exactly at the 8 bits data boundary; In DOPI, CS# must go high while clock is low; otherwise, the instruction will be rejected and not executed, and the Write Enable Latch (WEL) bit is reset. Figure 31. Write Configuration Register 2 (WRCR2) Sequence (SPI Mode) CS# SCLK Command 31 30 29 72h SI CR2 Address * 3 2 1 0 7 6 5 4 3 2 1 0 MSB MSB Note 1: * See "9-3. Configuration Register 2" for defining address . Figure 32. Write Configuration Register 2 (WRCR2) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 72h 8Dh A[31:24] A[23:16] A[15:8] A[7:0] CR2 Address * Note 1: * See "9-3. Configuration Register 2" for defining address . Figure 33. Write Configuration Register 2 (WRCR2) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] 72h 8Dh A[31:24] A[23:16] A[15:8] A[7:0] CR2 Address * Note 1 : * See "9-3. Configuration Register 2" for defining address. Note 2 : CS# must go high while SCLK is low P/N: PM2183 39 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-9.Read Security Register (RDSCUR) The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read at any time (even in program/erase/write status register/write security register condition) and continuously. The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register data out on SO→ CS# goes high. Figure 34. Read Security Register (RDSCUR) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK command 2Bh SI Security register Out High-Z SO 7 6 5 4 3 2 1 Security register Out 0 7 6 5 4 3 2 1 0 7 MSB MSB Figure 35. Read Security Register (RDSCUR) Sequence (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 2Bh D4h 00 00 00 Security Register 00 Address Security Register Dummy Figure 36. Read Security Register (RDSCUR) Sequence (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 2Bh D4h 00 00 00 Security Register 00 Address P/N: PM2183 Security Register Dummy 40 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-10. Write Security Register (WRSCUR) The WRSCUR instruction sets the LDSO bit of the Security Register. The WREN (Write Enable) instruction is required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO bit) for customer to lock-down the 8K-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area cannot be updated any more. The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high. The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed. Figure 37. Write Security Register (WRSCUR) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 SCLK Command SI 2Fh High-Z SO Figure 38. Write Security Register (WRSCUR) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 2Fh D0h Figure 39. Write Security Register (WRSCUR) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2183 2Fh 41 D0h REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-11.Read Data Bytes (READ/READ3B/READ4B) The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on the falling edge of SCLK at a maximum frequency fR. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single READ/READ3B/ READ4B instruction. The address counter rolls over to 0 when the highest address has been reached. The sequence of issuing READ/READ3B/READ4B instruction is: CS# goes low→sending READ/READ3B/READ4B instruction code→ 3-byte or 4-byte address on SI→ data out on SO→to end READ/READ3B/READ4B operation can use CS# to high at any time during data out. Figure 40. Read Data Bytes (READ/READ3B/READ4B) Sequence (SPI Mode only) CS# SCLK Command SI 03h/13h (Note) 24/32-Bit Address (Note) 31 30 29 3 2 1 0 MSB SO Data Out 1 High-Z 7 6 5 4 3 2 Data Out 2 1 0 7 MSB Note: The number of address cycles are based on different address mode. In 3-Byte command operation, it is 24-bit. In 4-Byte command operation, it is 32-bit. P/N: PM2183 42 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-12. Read Data Bytes at Higher Speed (FAST_READ/FAST_READ3B/FAST_READ4B) The FAST_READ/FAST_READ3B/FAST_READ4B instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single FAST_READ/FAST_READ3B/FAST_READ4B instruction. The address counter rolls over to 0 when the highest address has been reached. The sequence of issuing FAST_READ/FAST_READ3B/FAST_READ4B instruction is: CS# goes low→ sending FAST_READ/FAST_READ3B/FAST_READ4B instruction code→ 3-byte or 4-byte address on SI→ 8 dummy cycles → data out on SO→ to end FAST_READ/FAST_READ3B/FAST_READ4B operation can use CS# to high at any time during data out. While Program/Erase/Write Status Register cycle is in progress, FAST_READ/FAST_READ3B/FAST_READ4B instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 41. Read at Higher Speed (FAST_READ/FAST_READ3B/FAST_READ4B) Sequence (SPI Mode only) CS# SCLK Command SI 24/32-Bit Address (Note) 0Bh/0Ch (Note) 31 30 29 3 2 1 0 High-Z SO CS# SCLK Dummy Cycle SI 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 SO 7 6 5 4 3 2 1 0 7 MSB MSB 6 5 4 3 2 1 0 7 MSB Note: The number of address cycles are based on different address mode. In 3-Byte command operation, it is 24-bit. In 4-Byte command operation, it is 32-bit. P/N: PM2183 43 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-13. OCTA Read Mode (8READ) The 8READ instruction enable Octa throughput of Serial NOR Flash in read mode. An OPI Enable bit of Configuration Register 2 must be set to "1" before sending the STR Octa READ instruction. While Program/Erase/Write Status Register cycle is in progress, 8READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. Figure 42. OCTA Read Mode Sequence (STR-OPI Mode) ≈ ≈ CS# SCLK ECh 13h A[31:24] A[23:16] A[15:8] ≈ Pre-drive SIO[7:0] A[7:0] Address P/N: PM2183 D0 D1 D2 D3 Dummy 44 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-14. OCTA DTR Read Mode (8DTRD) The 8DTRD instruction enable DTR Octa throughput of Serial NOR Flash in read mode. An DOPI Enable bit of Configuration Register 2 must be set to "1" before sending the DTR Octa READ instruction. While Program/Erase/Write Status Register cycle is in progress, 8DTRD instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle. In DTR Octa READ mode, the starting address must be even byte (A0=0). Figure 43. OCTA Read Mode Sequence (DTR-OPI Mode) ≈ CS# ≈ SCLK EEh ≈ SIO[7:0] ≈ DQS 11h A[31:24]A[23:16] A[15:8] A[7:0] D1 D0 D3 D2 Dummy Address word unit word unit Figure 44. OCTA Read Mode Sequence (DTR-OPI Mode) with DQS pre-cycle enabled (CR2 DQSPRC=1) ≈ CS# ≈ SCLK EEh ≈ SIO[7:0] ≈ DQS 11h A[31:24]A[23:16] A[15:8] A[7:0] D1 D0 D3 D2 Dummy Address word unit word unit P/N: PM2183 45 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-15. Preamble Bit The Preamble Bit data pattern supports system/memory controller to determine the valid windows of data output more easily and improve data capture reliability while the flash memory is running in high frequency. The preamble bit is designed as a 16-bit data pattern, which can be enabled or disabled by setting the bit4 of Configuration register (Preamble bit Enable bit). Once CR<4> is set, the preamble bit is inputted into dummy cycles. Two different patterns are selectable by setting CR<2> PSB (Pattern Select Bit), and please refer to "9-3. Configuration Register 2" for details. Once Preamble Bit feature is enabled, the preamble bit pattern will be output after a pre-driven signal. When the device is under OPI mode, all SIO pins except SIO3 will output the same learning pattern. The signal on SIO3 will be different from other I/O pins in case PSB=0. In OPI, when dummy cycle number reaches 20, the complete 16 bits will start to output right after the pre-driven signal. When dummy cycle number is not sufficient of 16 cycles, the rest of the preamble bits will be cut off. In DOPI, when dummy cycles number reaches 12, the complete 16 bits will start to output right after the pre-driven signal. Figure 45. Preamble Bit data pattern Output Sequence (STR-OPI Mode) CS# SCLK Preamble Bits Pre-drive SIO[7:0] ECh 13h A[31:24] A[23:16] A[15:8] A[7:0] P0 Address P1 P2 P3 D[7:0] D[7:0] Dummy Note: 8 dummy cycle example. Figure 46. Preamble Bit data pattern Output Sequence (DTR-OPI Mode) CS# SCLK DQS Preamble Bits Pre-drive SIO[7:0] EEh 11h A A A [31:24] [23:16] [15:8] A [7:0] P0 Address P1 P2 P3 D[7:0] D[7:0] D[7:0] D[7:0] Dummy Note: 6 dummy cycle example. P/N: PM2183 46 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-16. Burst Read To set the Burst length, following command operation is required to issue command: “C0h” in the first Byte, following clock defining wrap around register value. Their definitions are as the following table: Data Wrap Around Wrap Depth 00h Reserved Reserved 01h Yes 16-byte 02h Yes 32-byte 03h Yes 64-byte 1xh No X The wrap around unit is defined within the 256Byte page, with random initial address. It is defined as “wrap-around mode disable” for the default state of the device. To exit wrap around, it is required to issue another “C0h” command in which data=‘1xh”. Otherwise, wrap around status will be retained until power down or reset command. To change wrap around depth, it is requried to issue another “C0h” command in which data=“0xh”. Burst read is supported only in OPI mode after wrap around is enable. Burst read does not support DOPI. The device is default without Burst read. Figure 47. Set Burst Length (SPI Mode) CS# 0 1 2 3 4 5 6 7 8 9 D7 D6 10 11 12 13 14 15 SCLK SIO C0h D5 D4 D3 D2 D1 D0 Figure 48. Set Burst Length (STR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2183 C0h 3Fh 00 00 47 00 00 SBL REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-17. Fast Boot The Fast Boot Feature provides the ability to automatically execute read operation after power on cycle or reset without any read instruction. A Fast Boot Register is provided on this device. It can enable the Fast Boot function and also define the number of delay cycles and start address (where boot code being transferred). Instruction WRFBR (write fast boot register) and ESFBR (erase fast boot register) can be used for the status configuration or alternation of the Fast Boot Register bit. RDFBR (read fast boot register) can be used to verify the program state of the Fast Boot Register. The default number of delay cycles is 21 cycles in OPI/DOPI; while the number of delay cycles is 13 in SPI and there is a 16bytes boundary address for the start of boot code access. When CS# starts to go low, data begins to output from default address after the delay cycles. After CS# returns to go high, the device will go back to standard SPI/OPI/DOPI mode and user can start to input command. In the fast boot data out process from CS# goes low to CS# goes high, a minimum of one byte must be output. Once Fast Boot feature has been enabled, the device will automatically start a read operation after power on cycle, reset command, or hardware reset operation. Fast Boot Register (FBR) Bits Description FBSA (FastBoot Start Address) 31 to 4 3 Reserved 2 to 1 FBSD (FastBoot Start Delay Cycle) 0 FBE (FastBoot Enable) Bit Status Default State 16 bytes boundary address for the start of boot FFFFFFF code access. 1 00: 11 delay cycles 01: 15 delay cycles 10: 17 delay cycles 11: 21 delay cycles 0=FastBoot is enabled. 1=FastBoot is not enabled. Type NonVolatile NonVolatile 11 NonVolatile 1 NonVolatile Figure 49. Fast Boot Sequence (SPI Mode) CS# 0 - - - - - - n n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 n+9 n+10 n+11n+12n+13n+14n+15 SCLK Delay Cycles SI Don’t care or High Impedance Data Out 1 SO High Impedance 7 6 5 4 MSB 3 2 Data Out 2 1 0 7 MSB 6 5 4 3 2 1 0 7 MSB Note: The delay cycle is always 13 in SPI mode. P/N: PM2183 48 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 50. Fast Boot Sequence (STR-OPI Mode) ≈ CS# 1 ≈ 0 SCLK n-1 n n+1 n+2 n+3 Pre-drive ≈ SIO[7:0] D0 D1 D2 D3 Delay Cycles Note: If FBSD = 11, delay cycles is 21 and n is 20. If FBSD = 10, delay cycles is 17 and n is 16. If FBSD = 01, delay cycles is 15 and n is 14. If FBSD = 00, delay cycles is 11 and n is 10. 0 SCLK DQS 1 n-2 n-1 n n+1 ≈ CS# ≈ ≈ Figure 51. Fast Boot Sequence (DTR-OPI Mode) ≈ Pre-drive SIO[7:0] D1 D0 D3 D2 Delay Cycles Note: If FBSD = 11, delay cycles is 21 and n is 21. If FBSD = 10, delay cycles is 17 and n is 17. If FBSD = 01, delay cycles is 15 and n is 15. If FBSD = 00, delay cycles is 11 and n is 11. P/N: PM2183 49 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 52. Read Fast Boot Register (RDFBR) Sequence CS# 0 1 2 3 4 5 6 7 8 9 10 37 38 39 40 41 SCLK Command SI 16h Data Out 1 High-Z SO 7 6 5 Data Out 2 26 25 24 7 6 MSB MSB Figure 53. Read Fast Boot Register (RDFBR) Sequence (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 16h E9h 00 00 00 00 FBR1 Address FBR2 Dummy Figure 54. Read Fast Boot Register (RDFBR) Sequence (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 16h E9h 00 00 00 00 FBR1 Address P/N: PM2183 FBR2 Dummy 50 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 55. Write Fast Boot Register (WRFBR) Sequence CS# 0 1 2 3 4 5 6 7 8 37 38 39 9 10 SCLK Command SI Fast Boot Register 17h 7 6 26 25 24 5 MSB SO High-Z Figure 56. Write Fast Boot Register (WRFBR) Sequence (STR-OPI Mode) SCLK SIO[7:0] 17h E8h 00 00 00 00 FBR1 ≈ ≈ ≈ ≈ CS# FBR4 Figure 57. Write Fast Boot Register (WRFBR) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2183 17h E8h 00 00 00 51 00 FBR1 FBR2 FBR3 FBR4 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 58. Erase Fast Boot Register (ESFBR) Sequence CS# 0 1 2 3 4 5 6 7 SCLK Command SI 18h High-Z SO Figure 59. Erase Fast Boot Register (ESFBR) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 18h E7h Figure 60. Erase Fast Boot Register (ESFBR) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2183 18h 52 E7h REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-18. Sector Erase (SE/SE3B/SE4B) The Sector Erase (SE/SE3B/SE4B) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the Sector Erase (SE/SE3B/SE4B). Any address of the sector (Please refer to "5. MEMORY ORGANIZATION") is a valid address for Sector Erase (SE/SE3B/SE4B) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of the address byte been latched-in); otherwise, the instruction will be rejected and not executed. The sequence of issuing SE/SE3B/SE4B instruction is: CS# goes low→ sending SE/SE3B/SE4B instruction code→ 3-byte or 4-byte address → CS# goes high. The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets 1 during the tSE timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the Block is protected by BP bits (Block Protect Mode), the Sector Erase (SE/SE3B/SE4B) instruction will not be executed on the block. Figure 61. Sector Erase (SE/SE3B/SE4B) Sequence (SPI Mode) CS# SCLK 24/32-Bit Address (Note) Command SI 20h/21h (Note) 31 30 2 1 0 MSB Note: The number of address cycles are based on different address mode. In 3-Byte command operation, it is 24-bit. In 4-Byte command operation, it is 32-bit. Figure 62. Sector Erase (SE) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 21h DEh A[31:24] A[23:16] A[15:8] A[7:0] Figure 63. Sector Erase (SE) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2183 21h A A A DEh [31:24] [23:16] [15:8] 53 A [7:0] REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-19. Block Erase (BE/BE3B/BE4B) The Block Erase (BE/BE3B/BE4B) instruction is for erasing the data of the chosen block to be "1". The instruction is used for 64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Block Erase (BE/BE3B/BE4B). Any address of the block (Please refer to "5. MEMORY ORGANIZATION") is a valid address for Block Erase (BE/BE3B/BE4B) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed. The sequence of issuing BE/BE3B/BE4B instruction is: CS# goes low→ sending BE/BE3B/BE4B instruction code→ 3-byte or 4-byte address → CS# goes high. The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the Block is protected by BP bits (Block Protect Mode), the Block Erase (BE/BE3B/BE4B) instruction will not be executed on the block. Figure 64. Block Erase (BE/BE3B/BE4B) Sequence (SPI Mode) CS# SCLK 24/32-Bit Address (Note) Command SI D8h/DCh (Note) 31 30 2 1 0 MSB Note: The number of address cycles are based on different address mode. In 3-Byte command operation, it is 24-bit. In 4-Byte command operation, it is 32-bit. Figure 65. Block Erase (BE) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] DCh 23h A[31:24] A[23:16] A[15:8] A[7:0] Figure 66. Block Erase (BE) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2183 DCh 23h A A A [31:24] [23:16] [15:8] 54 A [7:0] REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-20. Chip Erase (CE) The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS# must go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed. The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high. The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. When the chip is under "Block protect (BP) Mode". The Chip Erase (CE) instruction will not be executed, if one (or more) sector is protected by BP3-BP0 bits. It will be only executed when BP3-BP0 all set to "0". Figure 67. Chip Erase (CE) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 7 SCLK Command SI 60h or C7h Figure 68. Chip Erase (CE) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 60h or C7h 9Fh or 38h Figure 69. Chip Erase (CE) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2183 60h or C7h 55 9Fh or 38h REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-21. Page Program (PP/PP3B/PP4B) The Page Program (PP/PP3B/PP4B) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending each Page Program (PP/ PP3B/PP4B) command. The device programs only the last 256 data bytes sent to the device. The last address byte (the 8 least significant address bits, A7-A0) should be set to 0 for 256 bytes page program. If A7-A0 are not all zero, transmitted data that exceed page length are programmed from the starting address (32-bit address that last 8 bit are all 0) of currently selected page. If the data bytes sent to the device exceeds 256, the last 256 data byte is programmed at the request page and previous data will be disregarded. If the data bytes sent to the device has not exceeded 256, the data will be programmed at the request address of the page. There will be no effort on the other data bytes of the same page. In DTR OPI, the starting address given must be even address (A0=0) and data byte number must be even. The sequence of issuing PP/PP3B/PP4B instruction is: CS# goes low→ sending PP/PP3B/PP4B instruction code→ 3-byte or 4-byte address → at least 1-byte on data in SPI and STR OPI; at least two bytes in DOPI→ CS# goes high. The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte boundary in SPI (the latest eighth bit of data being latched in), CS# must go high while SCLK is low in DOPI, otherwise the instruction will be rejected and will not be executed. The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the page is protected by BP bits (Block Protect Mode), the Page Program (PP/PP3B/PP4B) instruction will not be executed. Figure 70. Page Program (PP/PP3B/PP4B) Sequence (SPI Mode) CS# SCLK Command 24/32-Bit Address (Note) 31 30 29 02h/12h (Note) SI 3 2 Data Byte 1 1 0 7 6 5 4 3 2 1 0 MSB MSB CS# SCLK Data Byte 2 SI 7 6 MSB 5 4 3 2 Data Byte 3 1 0 7 6 5 4 MSB 3 2 Data Byte 256 1 0 7 6 5 4 3 2 1 0 MSB Note: The number of address cycles are based on different address mode. In 3-Byte command operation, it is 24-bit. In 4-Byte command operation, it is 32-bit. P/N: PM2183 56 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 71. Page Program (PP) Sequence (STR-OPI Mode) tCHSH ≈ CS# tSLCH 12h EDh A[31:24] A[23:16] A[15:8] A[7:0] D0 D1 ≈≈ SIO[7:0] ≈ SCLK D254 D255 Figure 72. Page Program (PP) Sequence (DTR-OPI Mode) tCLSH tSLCH SCLK SIO[7:0] 12h A A A EDh [31:24] [23:16] [15:8] A [7:0] D1 D0 word unit ≈ ≈ ≈ ≈ CS# D255 D254 word unit Note: CS# must go high while SCLK is low. P/N: PM2183 57 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-22. Deep Power-down (DP) The Deep Power-down (DP) instruction is for setting the device to minimum power consumption (the standby current is reduced from ISB1 to ISB2). The Deep Power-down mode requires the Deep Power-down (DP) instruction to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase instruction are ignored. When CS# goes high, it's only in deep power-down mode not standby mode. It's different from Standby mode. The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→CS# goes high. Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP) and Read Electronic Signature (RES) instruction and softreset command. (those instructions allow the ID being reading out). When Power-down, or software reset command the deep power-down mode automatically stops, and when power-up, the device automatically is in standby mode. For DP instruction the CS# must go high exactly at the byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed. As soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode. Figure 73. Deep Power-down (DP) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 tDP 7 SCLK Command B9h SI Stand-by Mode Deep Power-down Mode Figure 74. Deep Power-down (DP) Sequence (STR-OPI Mode) CS# tDP SCLK SIO[7:0] B9h 46h Stand-by Mode Deep Power-down Mode Figure 75. Deep Power-down (DP) Sequence (DTR-OPI Mode) CS# tDP SCLK SIO[7:0] B9h 46h Stand-by Mode Deep Power-down Mode P/N: PM2183 58 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-23. Release from Deep Power-down (RDP) The Release from Deep Power-down (RDP) instruction is completed by driving Chip Select (CS#) High. When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES1, and Chip Select (CS#) must remain High for at least tRES1(max), as specified in Table 23 AC Characteristics. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The RDP instruction is only for releasing from Deep Power Down Mode. Reset# pin goes low will release the Flash from deep power down mode. Even in Deep power-down mode, the RDP is also allowed to be executed, only except the device is in progress of program/erase/write cycle; there's no effect on the current program/erase/write cycle in progress. Figure 76. Release from Deep Power-down (RDP) Sequence (SPI Mode) CS# 0 1 2 3 4 5 6 tRES1 7 SCLK Command SI SO ABh High-Z Deep Power-down Mode Stand-by Mode Figure 77. Release from Deep Power-down (RDP) Sequence (STR-OPI Mode) CS# tRES1 SCLK SIO[7:0] 54h ABh Deep Power-down Mode Stand-by Mode Figure 78. Release from Deep Power-down (RDP) Sequence (DTR-OPI Mode) CS# tRES1 SCLK SIO[7:0] ABh 54h Deep Power-down Mode Stand-by Mode P/N: PM2183 59 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-24. Enter Secured OTP (ENSO) The ENSO instruction is for entering the additional 8K-bit secured OTP mode. While device is in 8K-bit secured OTP mode, main array access is not available. The additional 8K-bit secured OTP is independent from main array and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated again once it is lock-down. The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP mode→ CS# goes high. Please note that after issuing ENSO command user can only access secure OTP region with standard read or program procedure. Furthermore, once security OTP is lock down, only read related commands are valid. 10-25. Exit Secured OTP (EXSO) The EXSO instruction is for exiting the additional 8K-bit secured OTP mode. The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP mode→ CS# goes high. P/N: PM2183 60 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-26. Write Protection Selection (WPSEL) There are two write protection methods provided on this device, (1) Block Lock (BP) protection mode (2) Advanced Sector protection mode. If WPSEL=0, flash is under BP protection mode. If WPSEL=1, flash is under Advanced Sector protection mode. The default value of WPSEL is “0”. WPSEL command can be used to set WPSEL=1. Please note that WPSEL is an OTP bit. Once WPSEL is set to 1, there is no chance to recovery WPSEL back to “0”. If the flash is put on BP mode, the Advanced Sector protection mode is disabled. Contrarily, if flash is on the Advanced Sector protection mode, the BP mode is disabled. Every time after the system is powered-on, and the Security Register bit 7 is checked to be WPSEL=1, all the blocks or sectors will be write protected by Dynamic Protected Bit (DPB) in default. User may only unlock the blocks or sectors via GBULK instruction. Program or erase functions can only be operated after the Unlock instruction is conducted. When WPSEL = 0: Block Lock (BP) protection mode, Array is protected by BP3~BP0 and BP bits are protected by “SRWD=1 and WP#=0”, where SRWD is bit 7 of status register that can be set by WRSR command. When WPSEL =1: Advanced Sector protection mode, Blocks are individually protected by their own SPB or DPB lock bits which are set to “1” after power up. When the system accepts and executes WPSEL instruction, the bit 7 in security register will be set. It will activate WRLR, RDLR, WRSPB, ESSPB, WRDPB, RDDPB, GBLK, GBULK etc instructions to conduct block lock protection and replace the original Software Protect Mode (SPM) use (BP3~BP0) indicated block methods. Under the Advanced Sector protection mode (WPSEL=1), hardware protection is performed by driving WP#=0. Once WP#=0 all array blocks/sectors are protected regardless of the contents of SPB or DPB lock bits. The sequence of issuing WPSEL instruction is: CS# goes low → sending WPSEL instruction to enter the individual block protect mode → CS# goes high. Write Protection Selection Start (Default in BP Mode) WPSEL=1 Set WPSEL Bit Advanced Sector Protection Solid Protection P/N: PM2183 WPSEL=0 Block Protection (BP) Dynamic Protection 61 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-27. Individual Sector Protection There is a non-volatile (SPB) protection bit related to the single sector in main flash array. Each of the sectors is protected from programming or erasing operation when the bit is set. The figure below helps describing an overview of these methods. The device is default to the Solid mode when shipped from factory. The detail algorithm of advanced sector protection is shown as follows: Figure 79. Individual Sector Protection Overview Start Set SPB Lock Bit ? SPBLKDN# = 0 SPB Lock bit locked All SPB can not be changeable SPBLKDN# = 1 SPB Lock bit Unlocked SPB is changeable SPB Access Register (SPB) Dynamic Protect Bit Register (DPB) DPB=1 sector protect Sector Array SPB=1 Write Protect SPB=0 Write Unprotect DPB=0 sector unprotect P/N: PM2183 DPB 0 SA 0 SPB 0 DPB 1 SA 1 SPB 1 DPB 2 SA 2 SPB 2 : : : : : : DPB N-1 SA N-1 SPB N-1 DPB N SA N SPB N 62 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-27-1. Lock Register The Lock Register is a 8-bit one-time programmable register. Lock Register bit [6] is SPB Lock Down Bit (SPBLKDN) which is an unique bit assigned to control all SPB bit status. When SPBLKDN is 1, SPB can be changed. When it is locked as 0, all SPB can not be changed anymore, and SPBLKDN bit itself can not be altered anymore, either. The Lock Register is programmed using the WRLR (Write Lock Register) command. A WREN command must be executed to set the WEL bit before sending the WRLR command. Lock Register Bits Field Name Function Type Default State 7 RFU Reserved OTP 1 6 SPBLKDN# SPB Lock Down OTP 1 5 to 0 RFU Reserved OTP 1 Description Reserved for Future Use 1 = SPB changeable 0 = freeze SPB Reserved for Future Use Figure 80. Read Lock Register (RDLR) Sequence CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK command 2Dh SI Register Out High-Z SO 7 6 5 4 3 2 1 0 7 MSB Figure 81. Read Lock Register (RDLR) Sequence (STR-OPI Mode) CS# SCLK Pre-drive SIO[7:0] 2Dh D2h 00 00 00 Address P/N: PM2183 LR 00 LR Dummy 63 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 82. Read Lock Register (RDLR) Sequence (DTR-OPI Mode) CS# SCLK DQS Pre-drive SIO[7:0] 2Dh D2h 00 00 00 00 LR Address LR Dummy Figure 83. Write Lock Register (WRLR) Sequence CS# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCLK Command SI Lock Register In 2Ch 7 6 5 4 3 2 1 0 MSB High-Z SO Figure 84. Write Lock Register (WRLR) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] 2Ch D3h 00 00 00 00 LR Figure 85. Write Lock Register (WRLR) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] 2Ch D3h 00 00 00 00 LR Note: CS# must go high while SCLK is low. P/N: PM2183 64 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-27-2. Solid Protection Bits The Solid Protection Bits (SPBs) are nonvolatile bits for enabling or disabling write-protection to sectors and blocks. The SPB bits have the same endurance as the Flash memory. An SPB is assigned to each 4KB sector in the bottom and top 64KB of memory and to each 64KB block in the remaining memory. The factory default state of the SPB bits is “0”, which has the sector/block write-protection disabled. When an SPB is set to “1”, the associated sector or block is write-protected. Program and erase operations on the sector or block will be inhibited. SPBs can be individually set to “1” by the WRSPB command. However, the SPBs cannot be individually cleared to “0”. Issuing the ESSPB command clears all SPBs to “0”. A WREN command must be executed to set the WEL bit before sending the WRSPB or ESSPB command. The RDSPB command reads the status of the SPB of a sector or block. The RDSPB command returns 00h if the SPB is “0”, indicating write-protection is disabled. The RDSPB command returns FFh if the SPB is “1”, indicating write-protection is enabled. Note: If SPBLKDN=0, commands to set or clear the SPB bits will be ignored. SPB Register Bit Description 7 to 0 SPB (Solid Protection Bit) P/N: PM2183 Bit Status 00h = Unprotect Sector / Block FFh = Protect Sector / Block 65 Default Type 00h Non-volatile REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 86. Read SPB Status (RDSPB) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Mode 0 Command SI 32-Bit Address E2h A31 A30 A2 A1 A0 MSB Data Out High-Z SO 7 6 5 4 3 2 1 0 MSB Figure 87. Read SPB Status (RDSPB) Sequence (STR-OPI Mode) ≈ CS# ≈ SCLK E2h 1Dh A[31:24] A[23:16] A[15:8] ≈ Pre-drive SIO[7:0] A[7:0] Address SPB SPB Dummy Figure 88. Read SPB Status (RDSPB) Sequence (DTR-OPI Mode) ≈ CS# ≈ ≈ SCLK DQS Pre-drive E2h A A A 1Dh [31:24] [23:16] [15:8] A [7:0] ≈ SIO[7:0] Address P/N: PM2183 SPB SPB Dummy 66 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 89. SPB Erase (ESSPB) Sequence CS# 0 1 2 3 4 5 6 7 SCLK Command SI E4h High-Z SO Figure 90. SPB Erase (ESSPB) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] E4h 1Bh Figure 91. SPB Erase (ESSPB) Sequence (DTR-OPI Mode) CS# SCLK E4h SIO[7:0] P/N: PM2183 67 1Bh REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 92. SPB Program (WRSPB) Sequence CS# 0 1 2 3 4 5 6 7 8 37 38 39 9 SCLK Command SI 32-Bit Address E3h A31 A30 A2 A1 A0 MSB Figure 93. SPB Program (WRSPB) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] E3h 1Ch A[31:24] A[23:16] A[15:8] A[7:0] Figure 94. SPB Program (WRSPB) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] P/N: PM2183 E3h 1Ch A A A [31:24] [23:16] [15:8] 68 A [7:0] REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-27-3. Dynamic Write Protection Bits The Dynamic Protection features a volatile type protection to each individual sector. It can protect sectors from unintentional change, and is easy to disable when there are necessary changes. All DPBs are default as protected (FFh) after reset or upon power up cycle. Via setting up Dynamic Protection bit (DPB) by write DPB command (WRDPB), user can cancel the Dynamic Protection of associated sector. The Dynamic Protection only works on those unprotected sectors whose SPBs are cleared. After the DPB state is cleared to “0”, the sector can be modified if the SPB state is unprotected state. DPB Register Bit Description 7 to 0 DPB (Dynamic protected Bit) Bit Status Default 00h= DPB for the sector address unprotected FFh FFh= DPB for the sector address protected Type Volatile Figure 95. Read DPB Register (RDDPB) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Mode 0 Command SI 32-Bit Address E0h A31 A30 A2 A1 A0 MSB Data Out High-Z SO 7 6 5 4 3 2 1 0 MSB Figure 96. Read DPB Register (RDDPB) Sequence (STR-OPI Mode) ≈ CS# ≈ SCLK E0h 1Fh A[31:24] A[23:16] A[15:8] A[7:0] Address P/N: PM2183 ≈ Pre-drive SIO[7:0] DPB DPB Dummy 69 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 99. Read DPB Register (RDDPB) Sequence (DTR-OPI Mode) ≈ CS# ≈ ≈ SCLK DQS Pre-drive E0h A A A A [7:0] 1Fh [31:24] [23:16] [15:8] ≈ SIO[7:0] Address DPB DPB Dummy Figure 97. Write DPB Register (WRDPB) Sequence CS# Mode 3 0 1 2 3 4 5 6 7 8 37 38 39 40 41 42 43 44 45 46 47 9 SCLK Mode 0 Command SI Data Byte 1 32-Bit Address E1h A31 A30 7 A2 A1 A0 MSB 6 5 4 3 2 1 0 MSB Figure 98. Write DPB Register (WRDPB) Sequence (STR-OPI Mode) CS# SCLK SIO[7:0] E1h 1Eh A[31:24] A[23:16] A[15:8] A[7:0] DPB Address Figure 100. Write DPB Register (WRDPB) Sequence (DTR-OPI Mode) CS# SCLK SIO[7:0] E1h 1Eh A[31:24] A[23:16] A[15:8] A[7:0] DPB Address P/N: PM2183 70 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-27-4. Gang Block Lock/Unlock (GBLK/GBULK) These instructions are only effective after WPSEL was executed. The GBLK/GBULK instruction is a chip-based protected or unprotected operation. It can enable or disable all DPB. The WREN (Write Enable) instruction is required before issuing GBLK/GBULK instruction. The sequence of issuing GBLK/GBULK instruction is: CS# goes low → send GBLK/GBULK (7Eh/98h) instruction →CS# goes high. Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care when during SPI mode. The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed. 10-27-5. Sector Protection States Summary Table Protection Status DPB bit SPB bit 0 0 0 1 1 0 1 1 P/N: PM2183 Sector State Unprotect Protect Protect Protect 71 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-28. Program Suspend and Erase Suspend The Suspend instruction interrupts a Program or Erase operation to allow the device conduct other operations. After the device has entered the suspended state, the memory array can be read except for the page being programmed or the sector being erased. Security Register bit 2 (PSB) and bit 3 (ESB) can be read to check the suspend status. The PSB (Program Suspend Bit) sets to “1” when a program operation is suspended. The ESB (Erase Suspend Bit) sets to “1” when an erase operation is suspended. The PSB or ESB clears to “0” when the program or erase operation is resumed. When the Serial NOR Flash receives the Suspend instruction, Program Suspend Latency(tPSL) or Erase Suspend latency(tESL) is required to complete suspend operation. (Refer to "Table 23. AC CHARACTERISTICS") After the device has entered the suspended state, the WEL bit is clears to “0” and the PSB or ESB in security register is set to “1”, then the device is ready to acceptanother command. However, some commands can be executed without tPSL or tESL latency during the program/erase suspend, and can be issued at any time during the Suspend. Please refer to "Table 16. Acceptable Commands During Suspend". Figure 101. Suspend to Read Latency tPSL / tESL CS# P/N: PM2183 Suspend Command 72 Read Command REV. 1.0, MAR. 22, 2016 MX25UM51245G Table 16. Acceptable Commands During Suspend Command Name Suspend Type Command Code Commands which require tPSL/tESL delay READ 03h/13h FAST_READ 0Bh/0Ch 8READ ECh 8DTRD EEh RDSFDP 5Ah RDID 9Fh SBL C0h ENSO B1h EXSO C1h WREN 06h RESUME 30h RDLR 2Dh RDSPB E2h RDFBR 16h RDDPB E0h RDCR2 with A[31:30]=00/01 71h WRCR2 with A[31:30]=00 WRCR2 with A[31:30]=01 72h Program Suspend Erase Suspend • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • Commands not required tPSL/tESL delay WRDI 04h RDSR 05h RDCR 15h RDCR2 with A[31:30]=10 71h WRCR2 with A[31:30]=10 72h RDSCUR 2Bh RES ABh RSTEN 66h RST 99h NOP 00h P/N: PM2183 73 REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-29. Program Resume and Erase Resume The Resume instruction resumes a suspended Program or Erase operation. After the device receives the Resume instruction, the WEL and WIP bits are set to “1” and the PSB or ESB is cleared to “0”.The program or erase operation will continue until it is completed or until another Suspend instruction is received. To issue another Suspend instruction, the minimum resume-to-suspend latency (tPRS or tERS) is required. However, in order to finish the program or erase progress, a period equal to or longer than the typical timing is required. To issue other command except suspend instruction, a latency of the self-timed Page Program Cycle time (tPP) or Sector Erase (tSE) is required. The WEL and WIP bits are cleared to “0” after the Program or Erase operation is completed. Figure 102. Resume to Read Latency CS# Resume Command tSE / tBE / tPP Read Command Figure 103. Resume to Suspend Latency CS# P/N: PM2183 Resume Command tPRS / tERS 74 Suspend Command REV. 1.0, MAR. 22, 2016 MX25UM51245G 10-30. No Operation (NOP) The “No Operation” command is only able to terminate the Reset Enable (RSTEN) command and will not affect any other command. 10-31. Software Reset (Reset-Enable (RSTEN) and Reset (RST)) The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command following a Reset (RST) command. It returns the device to a standby mode. All the volatile bits and settings will be cleared then, which makes the device return to the default status as power on. To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will be invalid. If the Reset command is executed during program or erase operation, the operation will be disabled, the data under processing could be damaged or lost. The reset time is different depending on the last operation. For details, please refer to "Table 19. Reset Timing(Other Operation)" for tREADY2. P/N: PM2183 75 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 104. Software Reset Recovery Stand-by Mode 66 CS# 99 tREADY2 Mode Note: Refer to "Table 19. Reset Timing-(Other Operation)" for tREADY2. Figure 105. Reset Sequence (SPI mode) TSHSL CS# SCLK Command Command 99h 66h SIO0 Figure 106. Reset Sequence (STR-OPI mode) TSHSL CS# SCLK SIO[7:0] 66h 99h 99h 66h 99h 66h Figure 107. Reset Sequence (DTR-OPI mode) TSHSL CS# SCLK SIO[7:0] P/N: PM2183 66h 99h 76 REV. 1.0, MAR. 22, 2016 MX25UM51245G 11. Serial Flash Discoverable Parameter (SFDP) 11-1.Read SFDP Mode (RDSFDP) The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on CFI. The sequence of issuing RDSFDP instruction in SPI is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address bytes on SI pin→ send 8 dummy cycles → read SFDP code on SO→to end RDSFDP operation can use CS# to high at any time during data out. SFDP in SPI is a JEDEC standard, JESD216. The sequcn of issuing RDSFDP instruction in OPI/DOPI mode: CS# low → send RDSFDP instruction (5Ah/A5h) → send 4 address bytes on SIO pin→ send 20 dummy cycles → read SFDP code on SIO[7:0] → to end RDSFDP operation can use CS# to high at any time during data out. Figure 108. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence CS# 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 SCLK Command SI SO 24 BIT ADDRESS 23 22 21 5Ah 3 2 1 0 High-Z CS# 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 SCLK Dummy Cycle SI 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 SO 7 6 5 P/N: PM2183 4 3 2 1 0 7 MSB MSB 77 6 5 4 3 2 1 0 7 MSB REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 109. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence (STR-OPI Mode) 1 2 3 4 5 ≈ ≈ CS# 6 SCLK 26 27 28 Pre-drive A5h A[31:24] A[23:16] A[15:8] A[7:0] ≈ SIO[7:0] 5Ah Address D0 D1 D2 20 Dummy Figure 110. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence (DTR-OPI Mode) ≈ CS# 1 2 3 4 23 5Ah ≈ ≈ DQS SIO[7:0] 25 ≈ SCLK 24 A5h A[31:24]A[23:16] A[15:8] A[7:0] D1 D0 D3 D2 20 Dummy Address word unit word unit Note: Address must be low byte (A0=0) in DTR OPI. Table 17. Signature and Parameter Identification Data Values (TBD) P/N: PM2183 78 REV. 1.0, MAR. 22, 2016 MX25UM51245G 12. RESET Driving the RESET# pin low for a period of tRLRH or longer will reset the device. After reset cycle, the device is at the following states: - Standby mode - All the volatile bits such as WEL/WIP will return to the default status as power on. - All the volatile bits in CR2 will return to the default status as power on. - Fastboot read will be executed on first CS# pin goes low If the device is under programming or erasing, driving the RESET# pin low will also terminate the operation and data could be lost. During the resetting cycle, the SIO data becomes high impedance and the current will be reduced to minimum. Figure 111. RESET Timing CS# tRHSL SCLK tRH tRS RESET# tRLRH tREADY1 / tREADY2 Table 18. Reset Timing-(Standby) Symbol Parameter tRHSL Reset# high before CS# low tRS Reset# setup time tRH Reset# hold time tRLRH Reset# low pulse width tREADY1 Reset Recovery time Min. 10 15 15 10 35 Typ. Max. Unit us ns ns us us Min. 10 15 15 10 40 40 310 12 25 100 40 Typ. Max. Unit us ns ns us us us us ms ms ms ms Table 19. Reset Timing-(Other Operation) Symbol tRHSL tRS tRH tRLRH Parameter Reset# high before CS# low Reset# setup time Reset# hold time Reset# low pulse width Reset Recovery time (During instruction decoding) Reset Recovery time (for read operation) Reset Recovery time (for program operation) tREADY2 Reset Recovery time(for SE4KB operation) Reset Recovery time (for BE64K operation) Reset Recovery time (for Chip Erase operation) Reset Recovery time (for WRSR operation) P/N: PM2183 79 REV. 1.0, MAR. 22, 2016 MX25UM51245G 13. POWER-ON STATE The device is at below states when power-up: - Standby mode (please note it is not deep power-down mode) - Write Enable Latch (WEL) bit is reset The device must not be selected during power-up and power-down stage unless the VCC achieves below correct level: - VCC minimum at power-up stage and then after a delay of tVSL - GND at power-down Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level. An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and the flash device has no response to any command. For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not guaranteed. The write, erase, and program command should be sent after the below time delay: - tVSL after VCC reached VCC minimum level The device can accept read command after VCC reached VCC minimum and a time delay of tVSL. Please refer to the ""Power-up Timing"". Note: - To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommended. (generally around 0.1uF) - At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response to any command. The data corruption might occur during the stage while a write, program, erase cycle is in progress. - To stabilize the VCCQ level, the VCCQ/VSSQ rail decoupled by a suitable capacitor close to package pins is recommended. One VCCQ pin connect to one capacitor. - It is recommended VCC and VCCQ power are separated system supply with same supply voltage. P/N: PM2183 80 REV. 1.0, MAR. 22, 2016 MX25UM51245G 14. ELECTRICAL SPECIFICATIONS Table 20. ABSOLUTE MAXIMUM RATINGS RATING VALUE Ambient Operating Temperature Industrial grade -40°C to 85°C Storage Temperature -65°C to 150°C Applied Input Voltage -0.5V to VCC+0.5V Applied Output Voltage -0.5V to VCC+0.5V VCC to Ground Potential -0.5V to 2.5V NOTICE: 1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and functional operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. 2. Specifications contained within the following tables are subject to change. 3. During voltage transitions, all pins may overshoot to VCC+1.0V or -1.0V for period up to 20ns. Figure 113. Maximum Positive Overshoot Waveform Figure 112. Maximum Negative Overshoot Waveform 20ns 0V VCC+1.0V -1.0V 2.0V 20ns Table 21. CAPACITANCE TA = 25°C, f = 1.0 MHz Symbol Parameter CIN COUT P/N: PM2183 Min. Typ. Max. Unit Input Capacitance 8 pF VIN = 0V Output Capacitance 8 pF VOUT = 0V 81 Conditions REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 114. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL Input timing reference level 0.8VCC Output timing reference level 0.7VCC AC Measurement Level 0.3VCC 0.2VCC 0.5VCC Note: Input pulse rise and fall time are <1.0ns Figure 115. OUTPUT LOADING 25K ohm DEVICE UNDER TEST CL +1.8V 25K ohm CL=30pF Including jig capacitance P/N: PM2183 82 REV. 1.0, MAR. 22, 2016 MX25UM51245G Table 22. DC CHARACTERISTICS Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V Symbol Parameter Notes Min. Typ. Max. Units Test Conditions ILI Input Load Current 1 ±2 uA VCC = VCC Max, VIN = VCC or GND ILO Output Leakage Current 1 ±2 uA VCC = VCC Max, VOUT = VCC or GND ISB1 VCC Standby Current 1 20 180 uA VIN = VCC or GND, CS# = VCC ISB2 Deep Power-down Current 3 50 uA VIN = VCC or GND, CS# = VCC 20 40 mA 100MHz 8IO STR (SIO floating) 30 45 mA 100MHz 8IO DTR (SIO floating) 30 50 mA 200MHz 8IO STR (SIO floating) 55 80 mA 200MHz 8IO DTR (SIO floating) 30 40 mA 20 40 mA ICC1 ICC2 ICC3 ICC4 ICC4 ICC5 VCC Read VCC Program Current 1,3 1 VCC Write Status Register (WRSR) Current VCC Sector Erase Current (SE) VCC Block Erase Current (BE) 1 20 40 mA 1 30 40 mA VCC Chip Erase Current (CE) 1 20 40 mA Program in Progress, CS# = VCC Program status register in progress, CS#=VCC Erase in Progress, CS#=VCC Erase in Progress, CS#=VCC Erase in Progress, CS#=VCC VIL Input Low Voltage -0.4 0.3VCC V VIH Input High Voltage 0.7VCC VCC+0.4 V VOL Output Low Voltage 0.2 V IOL=100uA VOH Output High Voltage V IOH=-100uA VCC-0.2 Notes : 1. Typical values at VCC = 1.8V, T = 25°C. These currents are valid for all product versions (package and speeds). 2. Typical value is calculated by simulation. 3. VCC current only; not include VCCQ current. P/N: PM2183 83 REV. 1.0, MAR. 22, 2016 MX25UM51245G Table 23. AC CHARACTERISTICS Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V Symbol Alt. Parameter Clock frequency for SPI commands (except Read operation) fSCLK fC Clock frequency for OPI commands fRSCLK fR Clock Frequency for READ instructions Clock Frequency for FAST READ fTSCLK tCH(1) tCL(1) tCLH Clock High Time tCL Clock Low Time tSLCH tCHSL tCSS tSHSL tCSH tDVCH tDSU tDVCH / tDVCL tCHDX tDH tCHDX / tCLDX tCHSH tCLSH tSHCH tSHQZ(2) tQSV tDIS tCLQV / tCHQV tV tCLQX tHO tDQSQ tQH P/N: PM2183 Typ. Max. 133 200 66 133 "9-3-1. Dummy Cycle and Frequency Table (MHz)" Clock Frequency for 8READ, 8DTRD tCLCH(2)/ tCHCL(2) Min. fSCLK ≤ 100MHz Clock Rise Time (peak to peak) / fSCLK ≤ 133MHz Clock Fall Time (peak to peak) fSCLK ≤ 166MHz fSCLK > 166MHz CS# Active Setup Time (relative to SCLK) CS# Not Active Hold Time (relative to SCLK) From Read to next Read CS# Deselect Time From Write/Erase/Program to Read Status Register STR ≤ 133MHz (10) Data In Setup Time STR > 133MHz DTR ≤ 100MHz DTR ≤ 133MHz Data setup time (9) (10) DTR ≤ 166MHz DTR > 166MHz STR ≤ 133MHz (10) Data In Hold Time STR > 133MHz DTR ≤ 100MHz DTR ≤ 133MHz Data hold time (9) (10) DTR ≤ 166MHz DTR > 166MHz CS# Active Hold Time (relative to STR SCLK) CS# active hold time DTR STR CS# Not Active Setup Time (relative to SCLK) DTR Output Disable Time DQS Clock transient to DQS valid time Loading: 30pF Loading: 20pF Clock transient to Output Valid Loading: 15pF Loading: 10pF Output Hold Time Loading: 10pF(10) Loading: 15pF(10) SIO valid skew related to DQS Loading: 20pF(10) Loading: 30pF(10) SIO hold time related to DQS 84 Unit MHz MHz MHz MHz MHz 0.45*T 0.45*T 0.6 0.8 1 1.2 4.5 3 10 ns ns V/ns V/ns V/ns V/ns ns ns ns 40 ns 2 1 1 0.8 0.6 0.5 2 1 1 0.8 0.6 0.5 ns ns ns ns 3 ns 3 3 3 ns ns ns ns ns 1 min(tCL,tCH)tQHS 8 5 5 5 5 5 0.4 0.6 0.8 1 ns ns ns ns REV. 1.0, MAR. 22, 2016 MX25UM51245G Symbol tQHS tDP(2) tRES1(2) tW tBP tPP(4) tSE tBE tCE tESL(6) tPSL(6) tPRS(7) tERS(8) Alt. Parameter SIO hold skew factor Loading: 10pF(10) Loading: 15pF(10) Loading: 20pF(10) Loading: 30pF(10) CS# High to Deep Power-down Mode CS# High to Standby Mode Write Status/Configuration Register Cycle Time Byte-Program Page Program Cycle Time Sector Erase Cycle Time Block Erase (64KB) Cycle Time Chip Erase Cycle Time Erase Suspend Latency Program Suspend Latency Latency between Program Resume and next Suspend Latency between Erase Resume and next Suspend Min. Typ. 25 0.15 25 220 150 0.3 0.3 100 400 Max. 0.6 0.8 1 1.2 10 30 40 60 0.75 400 2000 300 25 25 Unit ns us us ms us ms ms ms s us us us us Notes: 1. tCH + tCL must be greater than or equal to 1/ Frequency. 2. Typical values given for TA=25°C. Not 100% tested. 3. Test condition is shown as Figure 114 and Figure 115. 4. While programming consecutive bytes, Page Program instruction provides optimized timings by selecting to program the whole 256 bytes or only a few bytes between 1~256 bytes. 5. By default dummy cycle value. Please refer to the "Table 1. Operating Frequency Comparison". 6. Latency time is required to complete Erase/Program Suspend operation until WIP bit is "0". 7. For tPRS, minimum timing must be observed before issuing the next program suspend command. However, a period equal to or longer than the typical timing is required in order for the program operation to make progress. 8. For tERS, minimum timing must be observed before issuing the next erase suspend command. However, a period equal to or longer than the typical timing is required in order for the erase operation to make progress. 9. tDVCH+tCHDX>1.5ns for each SIO; tDVCL+tCLDX>1.5ns for each SIO. 10. Sampled, not 100% tested. P/N: PM2183 85 REV. 1.0, MAR. 22, 2016 MX25UM51245G 15. OPERATING CONDITIONS At Device Power-Up and Power-Down AC timing illustrated in Figure 116 and Figure 117 are for the supply voltages and the control signals at device power-up and power-down. If the timing in the figures is ignored, the device will not operate correctly. During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL. Figure 116. AC Timing at Device Power-Up VCC VCC(min) GND tVR tSHSL CS# tSLCH tCHSL tCHSH tSHCH SCLK tDVCH tCHCL tCHDX LSB IN MSB IN SI High Impedance SO Symbol tVR tCLCH Parameter VCC Rise Time Notes 1 Min. 20 Max. 500000 Unit us/V Notes : 1.Sampled, not 100% tested. 2.For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to Table 23. AC CHARACTERISTICS. P/N: PM2183 86 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 117. Power-Down Sequence During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation. VCC CS# SCLK Figure 118. Power-up Timing VCC VCC(max) Chip Selection is Not Allowed VCC(min) tVSL Device is fully accessible VWI time P/N: PM2183 87 REV. 1.0, MAR. 22, 2016 MX25UM51245G Figure 119. Power Up/Down and Voltage Drop For Power-down to Power-up operation, the VCC of flash device must below VPWD for at least tPWD timing. Please check the table below for more detail. VCC VCC (max.) Chip Select is not allowed VCC (min.) V_keep tVSL Full Device Access Allowed VWI VPWD (max.) tPWD Time Table 24. Power-Up/Down Voltage and Timing Symbol Min. tPWD Parameter VCC voltage needed to below VPWD for ensuring initialization will occur Voltage that a re-initialization is necessary if VDD drop below to VKEEP The minimum duration for ensuring initialization will occur tVSL VCC(min.) to device operation tVR VCC Rise Time VCC VWI VPWD V_keep Max. Unit 0.8 V 1.5 V 300 us 1500 us 20 500000 us/V VCC Power Supply 1.65 2.0 V Write Inhibit Voltage 1.0 1.5 V 15-1.INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains 00h (all Status Register bits are 0). DEFDOPI# in CR2 depends on shipping device model. P/N: PM2183 88 REV. 1.0, MAR. 22, 2016 MX25UM51245G 16. ERASE AND PROGRAMMING PERFORMANCE Parameter Min. Typ. (1) Max. (2) Unit 40 ms Write Status Register Cycle Time Sector Erase Cycle Time (4KB) 25 400 ms Block Erase Cycle Time (64KB) 220 2000 ms Chip Erase Cycle Time 150 300 s Byte Program Time (via page program command) 25 60 us 0.15 0.75 ms Page Program Time Erase/Program Cycle 100,000 cycles Note: 1. Typical program and erase time assumes the following conditions: 25°C, 1.8V, and checkboard pattern. 2. Under worst conditions of 1.65V. 3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming command. 4. The maximum chip programming time is evaluated under the worst conditions of 0°C, VCC=1.8V, and 100K cycle with 90% confidence level. 17. DATA RETENTION Parameter Condition Min. Data retention 55˚C 20 Max. Unit years 18. LATCH-UP CHARACTERISTICS Min. Input Voltage with respect to GND on all power pins Max. 1.5 VCCmax Input current with respect to GND on all non-power pins -100mA +100mA Test conditions are compliant to JEDEC JDESD78 standard P/N: PM2183 89 REV. 1.0, MAR. 22, 2016 MX25UM51245G 19. ORDERING INFORMATION Please contact our regional sales for the latest product selection and available form factors. PART NO. CLOCK (MHz) TEMPERATURE PACKAGE Remark MX25UM51245GXDI0A 200 -40°C to 85°C 24-Ball BGA (5x5 ball array) Default x1I/O MX25UM51245GXDI1A 200 -40°C to 85°C 24-Ball BGA (5x5 ball array) Default DTR x8I/O enable MX25UM51245GMI0A 133 -40°C to 85°C 16-SOP (300mil) Default x1I/O MX25UM51245GMI1A 133 -40°C to 85°C 16-SOP (300mil) Default DTR x8I/O enable P/N: PM2183 90 REV. 1.0, MAR. 22, 2016 MX25UM51245G 20. PART NAME DESCRIPTION MX 25 UM 51245G XD I 0A MODEL CODE: 0A: Default STR, x1 I/O enable 1A: Default DTR, x8 I/O enable TEMPERATURE RANGE: I: Industrial (-40°C to 85°C) PACKAGE: XD: 24-Ball BGA (5x5 ball array) M: 16-SOP (300mil) DENSITY & MODE: 51245G: 512Mb TYPE: UM: 1.8V Octa I/O DEVICE: 25: Serial NOR Flash P/N: PM2183 91 REV. 1.0, MAR. 22, 2016 MX25UM51245G 21. PACKAGE INFORMATION P/N: PM2183 92 REV. 1.0, MAR. 22, 2016 MX25UM51245G P/N: PM2183 93 REV. 1.0, MAR. 22, 2016 MX25UM51245G 22. REVISION HISTORY Revision No. 0.01 Description Page Date 1. Added Individual Sector Protection information P18,21,29,61-71 APR/28/2015 2. Updated parameters for DC/AC Characteristics P82-84 3. Added V_keep to Figure 119 and Table 24P87 4. Content correction All 0.02 1. Detached Automotive specs 2. Content correction ALL JUN/02/2015 P13,29,47,49,72 0.03 1. Modified "Output Driver Strength Table" P24SEP/18/2015 2. Modified "9-3. Configuration Register 2"P25 3. Added Figure 44 P45 4. Updated suspend/resume descriptions. P72-74 5. Removed USPB function All 6. Modified ICC1/tSE/tBE/tCE value P83,85,89 7. Modified "18. LATCH-UP CHARACTERISTICS"P89 8. Added Model Code P90,91 9. Added SPI - 3 Byte Address Command Set All 10. Content correction P13,15,38,47,59, P79,84,85 0.04 1. Changed document status as "PRELIMINARY". All OCT/02/2015 2. Modified ISB1/ISB2(max.) value P83 3. Modified tDVCH/tDVCL & tCHDX/tCLDX (Min.;DTR>166MHz), P84 tCLQX (Min.) value 1.0 1. Removed "PRELIMINARY" to align with the product status 2. Updated parameters for DC/AC Characteristics 3. Updated Erase and Programming Performance 4. Updated CIN & COUT value 5. Modified Figure 3 & Figure 4 6. Modified Min. VCC Power Supply from 1.7V to 1.65V 7. Updated VWI (Max.) & tVSL (Min.) spec 8. Added a statement for product ordering information 9. Added 300mil 16-SOP package 10. Content correction P/N: PM2183 94 All MAR/22/2016 P83-85 P89 P81 P15 All P88 P90 P6-8,26,90,91,93 P5,25,26,46, P71,74,82 REV. 1.0, MAR. 22, 2016 MX25UM51245G Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2015-2016. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Audio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. 95