BSC036NE7NS3 G Data Sheet (592 KB, EN)

BSC036NE7NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
• Optimized technology for synchronous rectification
• Ideal for high frequency switching and DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
VDS
75
V
RDS(on),max
3.6
mW
ID
100
A
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC036NE7NS3 G
Package
PG-TDSON-8
Marking
036NE7NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
100
V GS=10 V, T C=100 °C
100
V GS=10 V, T A=25 °C,
R thJA=50 K/W 2)
20
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 W
260
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev. 2.0
page 1
2011-09-29
BSC036NE7NS3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
156
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.5
R thJA=50 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.8
top
-
-
18
minimal footprint
-
-
62
6 cm2 cooling area2)
-
-
50
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
75
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=110 µA
2,3
3,1
3,8
Zero gate voltage drain current
I DSS
V DS=75 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=75 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=50 A
-
2.9
3.6
mW
Gate resistance
RG
-
2.7
-
W
Transconductance
g fs
50
100
-
S
Rev. 2.0
|V DS|>2|I D|R DS(on)max,
I D=50 A
page 2
2011-09-29
BSC036NE7NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
4400
-
-
990
-
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=37,5 V,
f =1 MHz
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
48
-
Turn-on delay time
t d(on)
-
14
-
Rise time
tr
-
18
-
Turn-off delay time
t d(off)
-
38
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
22.1
-
Gate to drain charge
Q gd
-
12.6
-
-
21.0
-
V DD=37.5 V,
V GS=10 V, I D=25 A,
R G=1.6 W
pF
ns
Gate Charge Characteristics5)
V DD=37,5 V, I D=50 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
63.4
-
Gate plateau voltage
V plateau
-
5.0
-
Output charge
Q oss
-
65
-
-
-
100
-
-
400
-
0.9
1.2
V
-
44
-
ns
-
64
-
nC
V DD=37,5 V, V GS=0 V
V
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
5)
Q rr
A
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=37.5 V, I F=25A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2011-09-29
BSC036NE7NS3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
175
120
150
100
125
100
ID [A]
Ptot [W]
80
60
75
40
50
20
25
0
0
0
25
50
75
100
125
150
175
0
25
50
TC [°C]
75
100
125
150
175
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
1
limited by on-state
resistance
1 µs
10 µs
0.5
102
100 µs
ZthJC [K/W]
ID [A]
0.2
101
1 ms
0.1
0.1
0.05
10 ms
100
0.02
DC
0.01
single pulse
10-1
0.01
10-1
100
101
102
VDS [V]
Rev. 2.0
0
0
0
0
0
0
1
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2011-09-29
BSC036NE7NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
12
10 V
360
7V
10
320
5V
280
5.5 V
6V
RDS(on) [mW]
8
ID [A]
240
200
6V
160
6
7V
4
120
10 V
5.5 V
80
2
40
5V
4.5 V
0
0
1
2
0
3
0
100
200
VDS [V]
300
400
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
160
160
120
120
ID [A]
gfs [S]
200
80
80
40
40
150 °C
25 °C
0
0
0
2
4
6
8
40
80
120
160
200
ID [A]
VGS [V]
Rev. 2.0
0
page 5
2011-09-29
BSC036NE7NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
8
4
6
3
1100 µA
max
VGS(th) [V]
RDS(on) [mW]
110 µA
4
2
typ
2
1
0
-60
-20
20
60
100
140
0
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
Ciss
103
100
150 °C
IF [A]
C [pF]
Coss
102
10
25 °C
25°C, max
Crss
150°C, max
101
1
0
15
30
45
60
75
VDS [V]
Rev. 2.0
0.0
0.5
1.0
1.5
2.0
VSD [V]
page 6
2011-09-29
BSC036NE7NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=50 A pulsed
parameter: T j(start)
parameter: V DD
100
12
40 V
10
20 V
100 °C
60 V
8
VGS [V]
IAV [A]
125 °C
25 °C
10
6
4
2
0
1
0.1
1
10
100
0
1000
10
20
30
40
50
60
70
Qgate [nC]
tAV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
90
V GS
Qg
85
VBR(DSS) [V]
80
75
V g s(th)
70
65
Q g (th)
Q sw
Q gs
60
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.0
page 7
2011-09-29
BSC036NE7NS3 G
PG-TDSON-8 (SuperSO8)
Rev. 2.0
page 8
2011-09-29
BSC036NE7NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
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the express written approval of Infineon Technologies, if a failure of such components can
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the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
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Rev. 2.0
page 9
2011-09-29