BSC036NE7NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) VDS 75 V RDS(on),max 3.6 mW ID 100 A • Superior thermal resistance • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type BSC036NE7NS3 G Package PG-TDSON-8 Marking 036NE7NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 100 V GS=10 V, T C=100 °C 100 V GS=10 V, T A=25 °C, R thJA=50 K/W 2) 20 Unit A Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse E AS I D=50 A, R GS=25 W 260 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.0 page 1 2011-09-29 BSC036NE7NS3 G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 156 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 0.8 top - - 18 minimal footprint - - 62 6 cm2 cooling area2) - - 50 Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 75 - - Gate threshold voltage V GS(th) V DS=V GS, I D=110 µA 2,3 3,1 3,8 Zero gate voltage drain current I DSS V DS=75 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=75 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 2.9 3.6 mW Gate resistance RG - 2.7 - W Transconductance g fs 50 100 - S Rev. 2.0 |V DS|>2|I D|R DS(on)max, I D=50 A page 2 2011-09-29 BSC036NE7NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 4400 - - 990 - Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=37,5 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 48 - Turn-on delay time t d(on) - 14 - Rise time tr - 18 - Turn-off delay time t d(off) - 38 - Fall time tf - 10 - Gate to source charge Q gs - 22.1 - Gate to drain charge Q gd - 12.6 - - 21.0 - V DD=37.5 V, V GS=10 V, I D=25 A, R G=1.6 W pF ns Gate Charge Characteristics5) V DD=37,5 V, I D=50 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 63.4 - Gate plateau voltage V plateau - 5.0 - Output charge Q oss - 65 - - - 100 - - 400 - 0.9 1.2 V - 44 - ns - 64 - nC V DD=37,5 V, V GS=0 V V Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge 5) Q rr A T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=37.5 V, I F=25A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.0 page 3 2011-09-29 BSC036NE7NS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 175 120 150 100 125 100 ID [A] Ptot [W] 80 60 75 40 50 20 25 0 0 0 25 50 75 100 125 150 175 0 25 50 TC [°C] 75 100 125 150 175 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 1 limited by on-state resistance 1 µs 10 µs 0.5 102 100 µs ZthJC [K/W] ID [A] 0.2 101 1 ms 0.1 0.1 0.05 10 ms 100 0.02 DC 0.01 single pulse 10-1 0.01 10-1 100 101 102 VDS [V] Rev. 2.0 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2011-09-29 BSC036NE7NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 400 12 10 V 360 7V 10 320 5V 280 5.5 V 6V RDS(on) [mW] 8 ID [A] 240 200 6V 160 6 7V 4 120 10 V 5.5 V 80 2 40 5V 4.5 V 0 0 1 2 0 3 0 100 200 VDS [V] 300 400 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 160 160 120 120 ID [A] gfs [S] 200 80 80 40 40 150 °C 25 °C 0 0 0 2 4 6 8 40 80 120 160 200 ID [A] VGS [V] Rev. 2.0 0 page 5 2011-09-29 BSC036NE7NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 8 4 6 3 1100 µA max VGS(th) [V] RDS(on) [mW] 110 µA 4 2 typ 2 1 0 -60 -20 20 60 100 140 0 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 Ciss 103 100 150 °C IF [A] C [pF] Coss 102 10 25 °C 25°C, max Crss 150°C, max 101 1 0 15 30 45 60 75 VDS [V] Rev. 2.0 0.0 0.5 1.0 1.5 2.0 VSD [V] page 6 2011-09-29 BSC036NE7NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=50 A pulsed parameter: T j(start) parameter: V DD 100 12 40 V 10 20 V 100 °C 60 V 8 VGS [V] IAV [A] 125 °C 25 °C 10 6 4 2 0 1 0.1 1 10 100 0 1000 10 20 30 40 50 60 70 Qgate [nC] tAV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 90 V GS Qg 85 VBR(DSS) [V] 80 75 V g s(th) 70 65 Q g (th) Q sw Q gs 60 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.0 page 7 2011-09-29 BSC036NE7NS3 G PG-TDSON-8 (SuperSO8) Rev. 2.0 page 8 2011-09-29 BSC036NE7NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 2011-09-29