APPLICATION NOTE Comparing Micron M29EW with Macronix MX29GL_E 1. Introduction Macronix offers MX29GL_E high performance parallel flash in densities from 32Mb to 512Mb. MX29GL_E and Micron® M29EW devices have similar features, performance, and command codes, but there are some differences as indicated in blue text below. This application note explains how to accommodate those differences when migrating from Micron® M29EW devices to equivalent Macronix MX29GL_E parallel flash products from densities of 32Mb to 64Mb. The information in this document is based on datasheets listed in Section 11. Newer versions of the datasheets may override the contents of this document. 2. Features Both flash device families have similar features and functions as shown in Table 2-1. The primary feature difference is the I/O voltage range. Table 2-1: Feature Comparison Type / Function VCC Voltage Range I/O Voltage Range Bus Width Sector Uniform Size Top/Bottom Page Read Buffer Size Write Buffer Size WP# Pin Uniform Function Top/Bottom Software Protected Mode OTP Security Region Blank Check Command*5 Manufacture ID Uniform 32Mb Top/Bottom Device ID Uniform 64Mb Top/Bottom Package Macronix MX29GL_E 2.7V ~ 3.6V 2.7V ~ 3.6V*1 x16 / x8 64KB 8KB, 64KB 8Words / 16Bytes 16Words / 32Bytes Highest/Lowest address sector Top/Bottom two address sector Password (64bits) Solid Protection*3 128Words / 256Bytes C2h 227E/221D/2200 227E/221A/2200 (2201: Top) 227E/220C/2201 227E/2210/2200 (2201: Top) 56-TSOP (14x20mm) 64-LFBGA (11x13mm) 48-TSOP (12x20mm) 48-LFBGA (6x8mm) Micron® M29EW 2.7V ~ 3.6V 1.65V ~ 3.6V*2 x16 / x8 64KB 8KB, 64KB 8Words / 16Bytes 256Words / 256Bytes*4 Highest/Lowest address sector Top/Bottom two address sector Password (64bits) Non-volatile Protection*3 128Words / 256Bytes Yes 89h 227E/221D/2200 227E/221A/2200 (2201: Top) 227E/220C/2201 227E/2210/2200 (2201: Top) 56-TSOP (14x20mm) 64-LFBGA (11x13mm) 48-TSOP (12x20mm) 48-LFBGA (6x8mm) Note: 1. Macronix offers VI/O = Vcc = 2.7 ~ 3.6V 2. Micron® offers VI/O = 1.65 ~ Vcc, Vcc = 2.7 ~ 3.6V 3. Solid Protection is same function as Non-volatile Protection, which is just different naming P/N: AN0197 Ver:1, Oct. 30, 2012 APPLICATION NOTE Comparing Micron M29EW with Macronix MX29GL_E 4. Due to device limitation, Micron device in x8 mode could only offer 256Byte buffer length in write buffer 5. Micron® provides Blank Check command to determine memory cell that are programmed or over-erase. 3. Performance Table 3-1 shows MX29GL_E series and M29EW series Read/Write performance. Table 3-1: Read Function Performance (Random Read and Page Read) Read function Macronix MX29GL_E Micron® M29EW Random Read Access time 60ns (BGA package) 70ns (Taa/Tce or tAVQV/tELQV) 70ns (TSOP package) Page Access time 25ns 25ns (Tpa or tAVQV1) Table 3-2: Write Function Performance (Program and Erase) Write Function Macronix MX29GL_E *1 16 word 100us Write Buffer Program *1 time 256 word N/A Word Program time 11us Sector Erase time 0.6s 32Mb 32s Chip Erase time 64Mb 60s Write/Erase Cycles (Endurance) 100,000 Micron® M29EW 70us 284us 15us 0.5s N/A N/A 100,000 Note: 1. Write Buffer length: Maximum length is different; aligning length to 16 words to provide system compatibility. 2. All Values provided in Table 3-2 are “typical” values. 3-1. Write Buffer length alignment The Write Buffer sizes are different between the two device families and software modification is necessary to adjust for the difference. The Macronix MX29GL320E and MX29GL640E Write Buffer size is 32-Words. Micron’s Write Buffer size is 256-Bytes in x8 mode and 256-Words in x16 mode. There are two suggested methods for adapting to the difference in Write Buffer sizes: (i) Use a maximum Write Buffer length of 16-Words for both devices. (ii) Read the maximum Write Buffer length from the CFI table and adjust the algorithm to use this length. The Write Buffer length parameter is located at offset address 2Ah (word mode) of the CFI table. Regardless which method is adopted, the Write Buffer addresses need to fall within a 16-Word page boundary when using the Macronix device. P/N: AN0197 Ver:1, Oct. 30, 2012 APPLICATION NOTE Comparing Micron M29EW with Macronix MX29GL_E 4. DC Characteristics Comparison There are minor differences in DC characteristics. Table 4-1: Read / Write Current DC Characteristic Condition typ Read Current max typ Page Read Current max Deep Power Down typ typ Standby Current max typ Write Current max Macronix MX29GL_E 30mA @ 5MHz 50mA @ 5MHz 2mA @ 10MHz 10mA @ 10MHz 10uA 30uA 100uA 26mA 30mA Micron® M29EW 20mA @ 5MHz 25mA @ 5MHz 12mA @ 13MHz 16mA @ 13MHz N/A 35uA 120uA 35mA 50mA Generally, both have similar input and output voltage ranges, but there are some differences, which are highlighted in blue in Table 4-2 below. The major difference is Very High Voltage range (for accelerated programming) which may damage the flash device if the maximum level is exceeded. Table 4-2: Input / Output Voltage DC Characteristic Condition Very High Voltage Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage min max min max max min Table 4-3: Absolute Maximum Ratings Parameter Condition Storage Temperature no Bias Storage Temperature with Bias min VCC Voltage Range max min Input/Output Voltage Range max Program Voltage max P/N: AN0197 Macronix MX29GL_E Micron® M29EW 9.5V ~ 10.5V -0.1V 0.3VI/O 0.7VI/O VI/O+0.3V 0.45V 0.85VI/O 11.5V ~ 12.5V -0.5V 0.8V 2.0V VI/O+0.5V 0.2V VI/O – 0.2V Macronix MX29GL_E -65C to +150C -65C to +125C -0.5V 4V -0.5V VCC+0.5V 10.5V Micron® M29EW -65C to +125C -40C to +85C -2V 5.6V -0.6V VCC+0.6V 14.5V Ver:1, Oct. 30, 2012 APPLICATION NOTE Comparing Micron M29EW with Macronix MX29GL_E 5. Hardware Consideration The Macronix device has a similar footprint with the Micron® device. The TSOP56 and LFBGA64 in uniform sector, and TSOP48 and LFBGA48 in Top/Bottom boot sector configurations are shown below. 56-TSOP (14x20mm) NC NC A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# A21 WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 NC RFU NC RFU A16 A15 BYTE# A14 GND A13 Q15/A-1 A12 Q7 A11 Q14 A10 Q6 A9 Q13 A8 Q5 A19 Q12 A20 Q4 WE# VCC RESET# Q11 A21 Q3 WP#/Vpp Q10 RY/BY# Q2 A18 Q9 A17 Q1 A7 Q8 A6 Q0 A5 OE# A4 GND A3 CE# A2 A0 A1 NC RFU VI/O RFU 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 MX29GL_E Macronix GND (Pin 52, Pin 33) = Micron VSS ( Pin 52, Pin 33) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Reserve for Future Use 28 Reserve for Future Use M29EW 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 Reserve for Future Use 30 29 RFU RFU A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 RFU VCCQ Macronix VI/O pin ( Pin 29) = Micron VCCQ (Pin 29) 64-LFBGA (11x13mm) MX29GL_E M29EW 8 NC NC NC VIO GND NC NC NC 8 RFU RFU RFU VCC Q VSS RFU RFU RFU 7 A13 A12 A14 A15 A16 BYTE # Q15/A -1 GND 7 A13 A12 A14 A15 A16 BYTE # Q15/A -1 VSS 6 A9 A8 A10 A11 Q7 Q14 Q13 Q6 6 A9 A8 A10 A11 D7 D14 D13 D6 5 WE# RESET# A21 A19 Q5 Q12 VCC Q4 5 WE# RESET# A21 A19 D5 D12 VCC D4 4 RY/ BY# WP#/ ACC A18 A20 Q2 Q10 Q11 Q3 4 RY/ BY# WP#/ Vpp A18 A20 D2 D10 D11 D3 3 A7 A17 A6 A5 Q0 Q8 Q9 Q1 3 A7 A17 A6 A5 D0 D8 D9 D1 2 A3 A4 A2 A1 A0 CE# OE# GND 2 A3 A4 A2 A1 A0 CE# OE# VSS 1 NC NC NC NC NC VIO NC NC 1 RFU RFU RFU RFU RFU VCC Q RFU RFU A B C D E F G H A B C D E F G H P/N: AN0197 Ver:1, Oct. 30, 2012 APPLICATION NOTE Comparing Micron M29EW with Macronix MX29GL_E 48-TSOP (12x20mm) A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# A21 WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 NC on MX29GL320E 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 43 42 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 MX29GL_E A16 A15 BYTE# A14 GND A13 Q15/A-1 A12 Q7 A11 Q14 A10 Q6 A9 Q13 A8 Q5 A19 Q12 A20 Q4 WE# VCC RESET# Q11 A21 Q3 WP#/Vpp Q10 RY/BY# Q2 A18 Q9 A17 Q1 A7 Q8 A6 Q0 A5 OE# A4 GND A3 CE# A2 A0 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 RFU on JR28F032M29EW 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 43 42 42 41 40 39 38 37 36 35 34 33 32 31 30 29 27 28 26 25 M29EW A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 Macronix GND (Pin 46, Pin 27) = Micron VSS ( Pin 46, Pin 27) 48-LFBGA (6x8mm) MX29GL_E M29EW 6 A13 A12 A14 A15 A16 BYTE # Q15/A -1 GND 7 A13 A12 A14 A15 A16 BYTE # Q15/A -1 VSS 5 A9 A8 A10 A11 Q7 Q14 Q13 Q6 6 A9 A8 A10 A11 D7 D14 D13 D6 4 WE# RESET# A21 A19 Q5 Q12 VCC Q4 5 WE# RESET# A21 A19 D5 D12 VCC D4 3 RY/ BY# WP#/ ACC A18 A20 Q2 Q10 Q11 Q3 4 RY/ BY# WP#/ Vpp A18 A20 D2 D10 D11 D3 2 A7 A17 A6 A5 Q0 Q8 Q9 Q1 3 A7 A17 A6 A5 D0 D8 D9 D1 1 A3 A4 A2 A1 A0 CE# OE# GND 2 A3 A4 A2 A1 A0 CE# OE# VSS D E F G H E F G H A B C C4: NC on MX29GL320E P/N: AN0197 A B C D C4: RFU on PZ28F064M29EW Ver:1, Oct. 30, 2012 APPLICATION NOTE Comparing Micron M29EW with Macronix MX29GL_E 6. Software Considerations Basic command sets and write status checking methods are similar between both flash families. The algorithm descriptions may be slightly different, but the concepts are the same. 6-1 Basic Commands Basic Command Table of MX29GL_E and M29EW 555h Write to Buffer 555h Chip Erase 555h Sector Erase 555h Program/Erase Suspend XXX Program/Erase Resume XXX AAh AAh AAh AAh B0h 30h Addr 2AAh 2AAh 2AAh 2AAh Data 55h 55h 55h 55h Addr 555h SA*1 555h 555h Data A0h 25h 80h 80h Addr Addr SA 555h 555h Data Data N-1*2 AAh AAh Addr WA*3 2AAh 2AAh Data WD*4 55h 55h Addr WBL*5 555h SA Data WD 10h 30h Command 1st Bus Cycle 2nd Bus Cycle 3rd Bus Cycle 4th Bus Cycle 5th Bus Cycle 6th Bus Cycle Read Reset Program Addr Addr XXX Data Data F0h Note: 1. SA: Sector Address 2. N-1: Word Count 3. WA: Write Address 4. WD: Write Data 5. WBL: Write Buffer Location 6.2 Unique Commands There are several functions which can be used on the Micron device, which are not available on the Macronix flash. 6.2a) Micron does offer an additional Blank Check Setup (76h) and Blank Check Read (29h) command (to determine if a specific block is completely erased) which is not supported by Macronix flash. 6.2b) Micron offers Double, Quadruple, and Octuple parallel page/byte buffer programming commands (50h, 56h, 8Bh) which are not supported by Macronix. P/N: AN0197 Ver:1, Oct. 30, 2012 APPLICATION NOTE Comparing Micron M29EW with Macronix MX29GL_E 6.3 Write Status Checking Method When a flash program/erase operation is in progress, either the “Polling Method” or “Toggle Bit Method” may be used to monitor the operation. Both are standard algorithms in parallel flash and can be used for both device families. Polling Method: Polling method checks Q7 (data complement bit) and Q5 (time out bit) values during the operation. After the operation has finished, Q7 will output true Data. Toggle Bit Method: The toggle bit method checks the Q6 (toggle bit) value during writes. When the write operation ends, Q6 will stop toggling. Start Start Read Q7~Q0 at valid Read Q7~Q0 Twice No No Q6 Toggle ? Q7 = Data# ? Yes No No Q5 = 1 ? Q5 = 1 ? Yes Yes Read Q7~Q0 at valid Q7 = Data# ? Read Q7~Q0 Twice No P/N: AN0197 No Q6 Toggle? Yes Yes Fail Yes Pass PGM/ERS fail Write Reset CMD PGM/ERS Complete Ver:1, Oct. 30, 2012 APPLICATION NOTE Comparing Micron M29EW with Macronix MX29GL_E 7. Manufacturer ID & Device ID Command Manufacturer IDs are different and permits software to identify the device manufacturer, but Device IDs are the same. The same command set is used read the different Manufacturer IDs. Table 7-1: Manufacturer and Device ID Command Definitions Manufacturer ID Device ID Flash Vender MX29GL_E M29EW MX29GL_E st 1 Bus Cycle (command) 2nd Bus Cycle (command) 3rd Bus Cycle (command) 4th Bus Cycle (ID output) 5th Bus Cycle (ID output) 6th Bus Cycle (ID output) Address Data Address Data Address Data Address Data Address Data Address Data 555h AAh 2AAh 55h 555h 90h X00h C2h 555h AAh 2AAh 55h 555h 90h X00h 89h 555h AAh 2AAh 55h 555h 90h X01h 227Eh X0Eh 221D/221A(32Mb) 220C/2210(64Mb) X0Fh 2201h/2200h M29EW 555h AAh 2AAh 55h 555h 90h X01h 227Eh X0Eh 221D/221A(32Mb) 220C/2210(64Mb) X0Fh 2201h/2200h Note. 1. Device ID can be read out after Manufacturer ID with proper address and does not need another command sequence. 2. Use Reset command (F0h) to return to normal read mode. P/N: AN0197 Ver:1, Oct. 30, 2012 APPLICATION NOTE Comparing Micron M29EW with Macronix MX29GL_E 8. Power-Up Timing Macronix and Micron® power on sequences are similar, but the timing is slightly different. Check system timing to determine if a timing adjustment is needed. Table 8-1: Power-Up Timing Parameter Symbol Condition VCC Rise Time Tvr VCC Setup Time VIO Setup Time Tvcs/tVCHPH+tPHEL Tvios/tVCQHPH+tPHEL min max min min Vcc Macronix MX29GL128F 20us/V 500ms/V 500us N/A Micron 28F128M29EW N/A N/A 60us 50us Tvcs/tVCHPH + Tvr VI/O Tvios/tVCQHPH + Tvr CE P/N: AN0197 Ver:1, Oct. 30, 2012 APPLICATION NOTE Comparing Micron M29EW with Macronix MX29GL_E 9. H/W Reset# Pin Timing Macronix and Micron both offer a hardware reset function. The operation is same but the timing is slightly different. System timing may need to be adjusted for the auto algorithm and non-auto algorithm (Figure 9-1). Table 9-1: Reset# Timing H/W Timing Characteristic Macronix MX29GL_E Micron® M29EW 200ns (min) 50ns (min) 10us (min) 100ns (min) 20us (max) 25us (max) 500ns (min) 100ns (min) 500ns (max) N/A Trh or tPHEL/tPHGL (Reset# high to Read) During auto Trp1 or tPLPH * algorithm mode (Reset# pulse width) Tready1 or tPLRH (Reset# low to read or write) During non-auto Trp2 or tPLPH * algorithm mode (Reset# pulse width) Tready2 (Reset# low to read or write) * Macronix defines different reset timing between auto and non-auto algorithm; Micron defines same value in both. Trb CE#, CE#, OE# || Trh/tPHEL/tPHG WE# || RY/BY# Tr RY/BY# Tready1/tPLRH || || Reset Trp1/tPLPH Reset Tready2 Trp2/tPLPH During auto algo During non-auto algorithm rithm mode mode * Macronix defines different reset timing between auto and non-auto algorithm; Micron defines same value in both. P/N: AN0197 Ver:1, Oct. 30, 2012 APPLICATION NOTE Comparing Micron M29EW with Macronix MX29GL_E 10. Summary Macronix MX29GL_E and Micron M29EW Parallel Flash occupy the same PCB footprint and have similar commands, functions, and features. There are I/O supply voltage level differences, Power-Up/Reset timing differences, and accelerated programming voltage level differences which may need to be accommodated. The software may need to be modified to use a maximum Write Buffer size of 16-Words. In addition, the software algorithms need to ensure that Write Buffer addresses fall within a 16-Word page boundary. 11. Data Sheet Version Table 11-1 shows the datasheet versions used for comparison in this application note. For the most current, detailed Macronix specification, please refer to the Macronix Website at http://www.macronix.com Table 11-1: Datasheet Version Data sheet Location Date Issue Revision MX29GL320E MX29GL640E M29EW Website Website Website Dec. 29, 2011 Dec. 27, 2011 Apr, 2011 Rev. 1.2 Rev. 1.4 Rev. 05 12. Appendix Cross Reference Table 12-1 shows basic part number and package information for the Macronix MX29GL_F and Micron products. Table 12-1: Part Number Cross Reference Density 32Mb 64Mb Macronix Part*1 MX29GL320ETTI-70G MX29GL320EBTI-70G MX29GL320ETXEI-70G MX29GL320EBXEI-70G MX29GL640ETTI-70G MX29GL640EBTI-70G MX29GL640ETXEI-70G MX29GL640EBXEI-70G MX29GL640EHT2I-70G MX29GL640ELT2I-70G MX29GL640EHXFI-70G MX29GL640ELXFI-70G Micron® Part JR28F032M29EWT JR28F032M29EWB PZ28F032M29EWT PZ28F032M29EWB JR28F064M29EWT JR28F064M29EWB PZ28F064M29EWT PZ28F064M29EWB JS28F064M29EWH JS28F064M29EWL PC28F064M29EWH PC28F064M29EWL Package Dimension 48-TSOP 12x20mm 48-LFBGA 6x8x13mm 0.4mm ball 48-TSOP 12x20mm 48-LFBGA 6x8x13mm 0.4mm ball 56-TSOP 14x20mm 64-LFBGA 11x13x14mm 0.6mm ball Note: 1. Macronix only offers VI/O = Vcc = 2.7 ~ 3.6V option P/N: AN0197 Ver:1, Oct. 30, 2012 APPLICATION NOTE Comparing Micron M29EW with Macronix MX29GL_E Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2011~2012. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au-dio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only. For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com P/N: AN0197 Ver:1, Oct. 30, 2012