APPLICATION NOTE Replacing Micron 28F128M29EW with Macronix MX29GL128F 1. Introduction Macronix offers MX29GL_F high performance parallel flash in densities from 128Mb to 1Gb. MX29GL_F and Micron® M29EW devices have similar features, performance, and command codes, but there are some differences as indicated in blue text below. This application note explains how to accommodate those differences when migrating from Micron® 28F128M29EW devices to equivalent Macronix MX29GL128F parallel flash products. The information in this document is based on datasheets listed in Section 11. Newer versions of the datasheets may override the contents of this document. 2. Features Both flash device families have similar features and functions as shown in Table 2-1. Table 2-1: Feature Comparison Type / Function Macronix MX29GL128F VCC Voltage Range 2.7V ~ 3.6V 2.7V ~ 3.6V (H/L type*1) I/O Voltage Range 1.65V ~ 3.6V (U/D type*2) Bus Width x16 / x8 Sector Size 128KB Page Read Buffer Size 8Words / 16Bytes Write Buffer Size 32Words / 64Bytes Highest/Lowest address WP# pin function sector Password (64bits) Software Protected Mode Solid Protection*3 OTP Security Region 128Words / 256Bytes Blank Check Command*5 Manufacture ID C2h Device ID 227E/2221/2201 56-TSOP (14x20mm) Package 64-LFBGA (11x13mm) Micron 28F128M29EW 2.7V ~ 3.6V 1.65V ~ 3.6V x16 / x8 128KB 8Words / 16Bytes 256Words / 256Bytes*4 Highest/Lowest address sector Password (64bits) Non-volatile Protection*3 128Words / 256Bytes Yes 89h 227E/2221/2201 56-TSOP (14x20mm) 64-LFBGA (11x13mm) Note: 1. 1 Macronix offers ‘H/L’ type H type is “VI/O = Vcc = 2.7 ~ 3.6V, highest address sector protected.” L type is “VI/O = Vcc = 2.7 ~ 3.6V, lowest address sector protected.” ® 2. Macronix ‘U/D’ is same as Micron default part number. ® U type / Micron device is “VI/O = 1.65 ~ Vcc, Vcc = 2.7 ~ 3.6V, highest address sector protected.” P/N: AN0195 1 Rev:1, Oct. 30, 2012 APPLICATION NOTE Replacing Micron 28F128M29EW with Macronix MX29GL128F ® D type / Micron device is “VI/O = 1.65 ~ Vcc, Vcc = 2.7 ~ 3.6V, lowest address sector protected.” 3. Solid Protection is same function as Non-volatile Protection, which is just different naming ® 4. Micron write buffer is 256-Bytes in x8 mode and 256-Words in x16 mode. ® 5. Micron provides Blank Check command to determine memory cell that are programmed or over-erase. 3. Performance Table 3-1 shows MX29GL128F series and 28F128M29EW series Read/Write performance. Table 3-1: Read Function Performance (Random Read and Page Read) Read function Macronix MX29GL128F Micron 28F128M29EW 90ns (H/L type) 60ns (BGA package) Random Read Access time (Taa/Tce or tAVQV/tELQV) 110ns (U/D type) 70ns (TSOP package) *1 25ns (H/L type ) Page Access time 25ns (Tpa or tAVQV1) 30ns (U/D type) Note: ® 1. Random Read Access time: Macronix performance is VIO voltage dependent, and Micron is package dependent. 2. System needs to align read speed for replacement. 3. Align ‘wait state’ setting of the controller or SoC, if speed is critical factor in system. Table 3-2: Write Function Performance (Program and Erase) Write Function Macronix MX29GL128F Micron 28F128M29EW *1 Write Buffer 32 word (typ) 120us 85us Program time 256 word*1 (typ) N/A 284us Word Program Time (typ) 11us 15us Sector Erase typ 0.6s 0.5s Time max 5s 4s Chip Erase time (typ) 64s N/A Write/Erase Cycles (Endurance) 100,000 100,000 Note: 1. The maximum buffer sizes of the Macronix and Micron devices are different. Using only to 32-words of the buffer and aligning the write buffer addresses on a 32-Word page boundary provides system compatibility. P/N: AN0195 2 Rev:1, Oct. 30, 2012 APPLICATION NOTE Replacing Micron 28F128M29EW with Macronix MX29GL128F 3-1. Write Buffer Length Alignment The Write Buffer sizes are different between the two devices and software modification is necessary to adjust for the difference. Macronix MX29GL12835F Write Buffer size is 32-Words. Micron 28F128M29EW Write Buffer size is 256-Bytes in x8 mode and 256-Words in x16 mode. There are two suggested methods for adapting to the difference in Write Buffer sizes: (i) Use a maximum Write Buffer length of 32-Words for both devices. (ii) Read the maximum Write Buffer length from the CFI table and adjust the algorithm to use this length. The Write Buffer length parameter is located at offset address 2Ah (word mode) of the CFI table. Regardless which method is adopted, the Write Buffer addresses need to fall within a 32-Word page boundary when using the Macronix device. 4. DC Characteristics Comparison Table 4-1 shows that Read and Write currents are similar. Table 4-1: Read / Write Current DC Characteristic Condition typ Read Current max typ Page Read Current max typ Standby Current max typ Write Current max typ Deep Power Down P/N: AN0195 Macronix MX29GL128F Micron 28F128M29EW 20mA @ 5MHz 20mA @ 5MHz 50mA @ 5MHz 25mA @ 5MHz 2mA @ 10MHz 12mA @ 13MHz 10mA @ 10MHz 16mA @ 13MHz 30uA 50uA 100uA 120uA 26mA 35mA 30mA 50mA 10uA N/A 3 Rev:1, Oct. 30, 2012 APPLICATION NOTE Replacing Micron 28F128M29EW with Macronix MX29GL128F Generally, both have similar input and output voltage ranges as shown in Table 4-2. Table 4-2: Input / Output Voltage DC Characteristic Condition Macronix MX29GL128F Micron 28F128M29EW min 9.5V ~ 10.5V*1 -0.1V 11.5V ~ 12.5V -0.5V max 0.3VI/O 0.8V min 0.7VI/O 2.0V max VI/O+0.3V VI/O+0.5V Output Low Voltage max 0.45V 0.15VI/O Output High Voltage min 0.85VI/O VI/O – 0.2V Very High Voltage Input Low Voltage Input High Voltage Note: 1.The major difference is Very High Voltage range which may damage the flash device if the maximum level is exceeded. P/N: AN0195 4 Rev:1, Oct. 30, 2012 APPLICATION NOTE Replacing Micron 28F128M29EW with Macronix MX29GL128F 5. Hardware Consideration The Macronix device has a similar footprint with the Micron® device. Please refer to the 56-TSOP & 64-LFBGA diagrams below. 56-TSOP (14x20mm) NC A22 A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# A21 WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 MX29GL128F NC RFU NC A22 A16 A15 BYTE# A14 GND A13 Q15/A-1 A12 Q7 A11 Q14 A10 Q6 A9 Q13 A8 Q5 A19 Q12 A20 Q4 WE# VCC RESET# Q11 A21 Q3 WP#/Vpp Q10 RY/BY# Q2 A18 Q9 A17 Q1 A7 Q8 A6 Q0 A5 OE# A4 GND A3 CE# A2 A0 A1 NC RFU VI/O RFU 1 Reserve for Future Use 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Reserve for Future Use 28 Reserve for Future Use RFU RFU A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 RFU VCCQ Reserve for Future Use 56 Reserve for Future Use 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 Reserve for Future Use 30 29 28F128M29EW Macronix GND (Pin 52, Pin 33) = Micron VSS ( Pin 52, Pin 33) Macronix VI/O pin ( Pin 29) = Micron VCCQ (Pin 29) 64-LFBGA (11x13mm) MX29GL128F 28F128M29EW 8 NC A22 NC VIO GND NC NC NC 8 NC A22 RFU VCC Q VSS RFU RFU RFU 7 A13 A12 A14 A15 A16 BYTE # Q15/A -1 GND 7 A13 A12 A14 A15 A16 BYTE # Q15/A -1 VSS 6 A9 A8 A10 A11 Q7 Q14 Q13 Q6 6 A9 A8 A10 A11 D7 D14 D13 D6 5 WE# RESET# A21 A19 Q5 Q12 VCC Q4 5 WE# RESET# A21 A19 D5 D12 VCC D4 4 RY/ BY# WP#/ ACC A18 A20 Q2 Q10 Q11 Q3 4 RY/ BY# WP#/ Vpp A18 A20 D2 D10 D11 D3 3 A7 A17 A6 A5 Q0 Q8 Q9 Q1 3 A7 A17 A6 A5 D0 D8 D9 D1 2 A3 A4 A2 A1 A0 CE# OE# GND 2 A3 A4 A2 A1 A0 CE# OE# VSS 1 NC NC NC NC NC VIO NC NC 1 RFU RFU RFU RFU RFU VCC Q RFU RFU A B C D E F G H A B C D E F G H P/N: AN0195 5 Rev:1, Oct. 30, 2012 APPLICATION NOTE Replacing Micron 28F128M29EW with Macronix MX29GL128F 6. Software Considerations Basic command sets and write status checking methods are similar between both flash families. The algorithm descriptions may be slightly different, but the concepts are the same. Micron does offer an additional Blank Check Setup (76h) and Blank Check Read (29h) command (to determine if a specific block is completely erased) which is not supported by Macronix flash. 6-1 Basic Command Table (Word mode) MX29GL128F and 28F128M29EW have same basic command set. The Read operation and Write command could be used directly without any modification. Table 6-1 shows the command set in Word mode. Table 6-1: Basic Command Table Read Reset Program Write to Buffer Chip Erase Sector Erase Program/Erase Suspend Program/Erase Resume Addr Addr XXX 555h 555h 555h 555h XXX XXX Data Data F0h AAh AAh AAh AAh B0h 30h Addr 2AAh 2AAh 2AAh 2AAh Data 55h 55h 55h 55h Addr 555h SA 555h 555h Data A0h 25h 80h 80h Addr Addr SA 555h 555h Data Data N-1 *2 AAh AAh *3 2AAh 2AAh *4 55h 55h WBL 555h SA WD 10h 30h Command st 1 Bus Cycle nd 2 Bus Cycle rd 3 Bus Cycle th 4 Bus Cycle th 5 Bus Cycle 6th Bus Cycle Addr Data Addr Data Note: 1. SA: Sector Address 2. N-1: Word Count 3. WA: Write Address 4. WD: Write Data 5. WBL: Write Buffer Location P/N: AN0195 *1 WA WD *5 6 Rev:1, Oct. 30, 2012 APPLICATION NOTE Replacing Micron 28F128M29EW with Macronix MX29GL128F 6-2 Write Status Checking Method When a flash program/erase operation is in progress, either the “Polling Method” or “Toggle Bit Method” may be used to monitor the operation. Both are standard algorithms in parallel flash and can be used for both device families. Polling Method: Polling method checks Q7 (data complement bit) and Q5 (time out bit) values during the program/erase operation. After the operation has finished, Q7 will output true Data. Toggle Bit Method: The toggle bit method checks the Q6 (toggle bit) value during the program/erase operation. When the operation ends, Q6 will stop toggling. Start Start Read Q7~Q0 Twice Read Q7~Q0 at valid address Q7 = Data# ? Q6 Toggle ? No No Yes No Yes No Q5 = 1 ? Q5 = 1 ? Yes Yes Read Q7~Q0 Twice Read Q7~Q0 at valid address Q7 = Data# ? No Q6 Toggle? No Yes Yes Fail P/N: AN0195 PGM/ERS fail Write Reset CMD Pass 7 PGM/ERS Complete Rev:1, Oct. 30, 2012 APPLICATION NOTE Replacing Micron 28F128M29EW with Macronix MX29GL128F 7. Manufacturer ID & Device ID Command Manufacturer IDs are different and permit software to identify the device manufacturer. The same command set is used read the different Manufacturer IDs. Device IDs are the same. Table 7-1: Manufacturer and Device ID Command Definitions Flash Vender 1st Bus Cycle (command) 2nd Bus Cycle (command) 3rd Bus Cycle (command) 4th Bus Cycle (ID output) 5th Bus Cycle (ID output) 6th Bus Cycle (ID output) Address Data Address Data Address Data Address Data Address Data Address Data Manufacturer ID MX29GL128F 28F128M29EW 555h 555h AAh AAh 2AAh 2AAh 55h 55h 555h 555h 90h 90h X00h X00h C2h 89h Device ID MX29GL128F 28F128M29EW 555h 555h AAh AAh 2AAh 2AAh 55h 55h 555h 555h 90h 90h X01h X01h 227Eh 227Eh X0Eh X0Eh 2221h 2221h X0Fh X0Fh 2201h 2201h Note. 1. Device ID can be read out after Manufacturer ID with proper address and does not need another command sequence. 2. Use Reset command (F0h) to return to normal read mode. 8. Power-Up Timing Macronix and Micron® power on sequences are similar, but the timing is slightly different. Check system timing to determine if a timing adjustment is needed. Table 8-1: Power-Up Timing Parameter VCC Rise Time VCC Setup Time VIO Setup Time P/N: AN0195 Symbol Macronix Condition Tvr Tvcs/tVCHPH+tPHEL Tvios or tVIOS MX29GL128F min max min min 20us/V 500ms/V 500us N/A 8 Micron 28F128M29EW N/A N/A 60us 50us Rev:1, Oct. 30, 2012 APPLICATION NOTE Replacing Micron 28F128M29EW with Macronix MX29GL128F Vcc Tvcs/tVCHPH + tPHEL Tvr VI/O Tvios/tVCQHPH + tPHEL Tvr CE# 9. H/W Reset# Pin Timing Macronix and Micron both offer a hardware reset function. The operation is same but the timing is slightly different. System timing may need to be adjusted for the auto algorithm and non-auto algorithm (Figure 9-1). Table 9-1: Reset# Timing H/W Timing Characteristic Macronix MX29GL128F Micron 28F128M29EW Trh or tPHEL/tPHGL (Reset# high to Read) During auto Trp1 or tPLPH algorithm mode* (Reset# pulse width) Tready1 or tPLRH (Reset# low to read or write) During non-auto Trp2 or tPLPH algorithm mode* (Reset# pulse width) Tready2 (Reset# low to read or write) 200ns (min) 50ns (min) 10us (min) 100ns (min) 20us (max) 25us (max) 500ns (min) 100ns (min) 500ns (max) N/A * Macronix defines different reset timing between auto and non-auto algorithm; Micron defines same value in both. CE#, OE# || CE#, OE# Trb1 Trh/tPHEL/tPHGL WE# || RY/BY# RY/BY# Trb2 Tready1/tPLRH Reset# || || Reset# Tready2 Trp2/tPLPH Trp1/tPLPH During non-auto algorithm mode During auto algorithm mode P/N: AN0195 9 Rev:1, Oct. 30, 2012 APPLICATION NOTE Replacing Micron 28F128M29EW with Macronix MX29GL128F 10. Summary Macronix MX29GL128F and Micron® 28F128M29EW Parallel Flash have similar commands, functions, and features. Additionally, the supported package types have identical footprints and are pin compatible. The software may need to be modified to use a maximum Write Buffer size of 32-Words. In addition, the software algorithms need to ensure that Write Buffer addresses fall within a 32-Word page boundary. There are access time differences and accelerated programming voltage level differences which may also need to be accommodated. 11. Data Sheet Version Table 11-1 shows the datasheet versions used for comparison in this application note. For the most current, detailed Macronix specification, please refer to the Macronix Website at http://www.macronix.com Table 11-1: Datasheet Version Data sheet Location Date Issue Revision MX29GL128F M29EW_32mb_128mb Website Website Jun. 28, 2012 Aug 2012 Rev. 1.1 Rev. A 12. Appendix Cross Reference Table 12-1 shows basic part number and package information for the Macronix MX29GL128F and Micron® 28F128M29EW products. Table 12-1: Part Number Cross Reference Density Macronix Part Micron Part Package 128Mb MX29GL128FUT2I-11G MX29GL128FDT2I-11G MX29GL128FUXFI-11G MX29GL128FDXFI-11G MX29GL128FUXFI-11G* MX29GL128FDXFI-11G* JS28F128M29EWHF JS28F128M29EWLA PC28F128M29EWHF PC28F128M29EWLA RC28F128M29EWHF RC28F128M29EWLA 56-TSOP (lead-free) 64-LFBGA (lead-free) 64-LFBGA (leaded) Dimension 14x20mm 11x13x14mm 0.6mm ball 11x13x14mm 0.6mm ball Note: * = Macronix does not offer parts with lead. P/N: AN0195 10 Rev:1, Oct. 30, 2012 APPLICATION NOTE Replacing Micron 28F128M29EW with Macronix MX29GL128F Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom. Copyright© Macronix International Co., Ltd. 2011~2012. All rights reserved, including the trademarks and tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au-dio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification purposes only For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com P/N: AN0195 11 Rev:1, Oct. 30, 2012