NTS1045EMFS D

NTS1045EMFS,
NRVTS1045EMFS
Exceptionally Low Leakage
Trench-based Schottky
Rectifier
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Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
•
Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
5,6
1,2,3
MARKING
DIAGRAM
A
1
Typical Applications
• Switching Power Supplies including Wireless, Smartphone and
•
•
•
•
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
45 VOLTS
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TE1045
A
Y
W
ZZ
A
C
TE1045
AYWWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
ORDERING INFORMATION
Device
Package
Shipping†
NTS1045EMFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTS1045EMFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVTS1045EMFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVTS1045EMFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 0
1
Publication Order Number:
NTS1045EMFS/D
NTS1045EMFS, NRVTS1045EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
Average Rectified Forward Current
(Rated VR, TC = 166°C)
IF(AV)
10
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 162°C)
IFRM
20
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
210
A
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
−55 to +150
°C
EAS
100
mJ
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
V
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
−
2.0
°C/W
0.42
0.48
−
0.60
0.34
0.41
−
0.53
20
7.0
50
20
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 5.0 Amps, TJ = 25°C)
(iF = 10 Amps, TJ = 25°C)
vF
(iF = 5.0 Amps, TJ = 125°C)
(iF = 10 Amps, TJ = 125°C)
Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
Diode Capacitance
(Rated dc Voltage, TJ = 25°C, f = 1 MHz)
Cd
V
mA
mA
pF
300
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NTS1045EMFS, NRVTS1045EMFS
TYPICAL CHARACTERISTICS
100
iF, INSTANTANEOUS FORWARD
CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 175°C
10
TA = 150°C
TA = 125°C
TA = 25°C
1
TA = −55°C
0.1
TA = 150°C
10
TA = 125°C
TA = 25°C
1
TA = −55°C
0.1
0.1
0.2
0.3
0.4
0.6
0.5
0.7
0.8
0
0.2
0.4
0.3
0.5
0.6
0.7
0.8
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
IR, INSTANTANEOUS REVERSE CURRENT (A)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.9
1.E+00
1.E+00
1.E−01
TA = 150°C
1.E−03
TA = 125°C
TA = 175°C
1.E−01
TA = 175°C
1.E−02
TA = 150°C
TA = 125°C
1.E−02
1.E−03
1.E−04
1.E−04
1.E−05
TA = 25°C
1.E−05
TA = 25°C
1.E−06
1.E−06
0
5
10
15
20
25
35
30
40
45
0
5
15
10
20
25
30
35
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
TJ = 25°C
1000
100
1
0.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
IF(AV), AVERAGE FORWARD CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0
C, JUNCTION CAPACITANCE (pF)
TA = 175°C
10
50
20
DC
15
Square Wave
10
5
RqJC = 2.1°C/W
0
100
110
120
130
140
150
160
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
170
45
NTS1045EMFS, NRVTS1045EMFS
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
22
IPK/IAV
= 20
20
IPK/IAV = 5
IPK/IAV = 10
18
16
TJ = 175°C
14
12
10
Square Wave
8
6
dc
4
2
0
0
4
2
6
8
12
10
14
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
50% (DUTY CYCLE)
R(t) (C/W)
10
1
20%
10%
5.0%
2.0%
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
1.0
0.1
10
100
1000
PULSE TIME (s)
Figure 8. Typical Thermal Characteristics
R(t) (C/W)
10
1
50% (DUTY CYCLE)
20%
0.1
10%
5.0%
2.0%
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
1.0%
0.01
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
PULSE TIME (s)
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
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4
100
1000
NTS1045EMFS, NRVTS1045EMFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
0.10 C
SOLDERING FOOTPRINT*
SIDE VIEW
8X
DETAIL A
3X
4X
1.270
0.750
4X
b
0.10
C A B
0.05
c
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
1.000
e/2
L
0.965
1
4
1.330
K
2X
0.905
2X
0.495
E2
PIN 5
(EXPOSED PAD)
G
L1
M
4.530
3.200
0.475
2X
D2
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTS1045EMFS/D