MBR540MFS D

MBR540MFS, NRVB540MFS
SWITCHMODE
Power Rectifiers
•
•
•
•
•
•
•
These state−of−the−art devices have the following features:
Low Power Loss / High Efficiency
New Package Provides Capability of Inspection and Probe After
Board Mounting
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
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SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
40 VOLTS
5,6
1,2,3
Mechanical Characteristics:
• Case: Epoxy, Molded
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting SurfaceTemperature for Soldering Purposes:
•
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
Symbol
Value
Unit
VRRM
VRWM
VR
40
Average Rectified Forward Current
(Rated VR, TC = 165°C)
IF(AV)
5
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 165°C)
IFRM
10
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−40 to +175
°C
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
EAS
40
mJ
V
B540
A
Y
W
ZZ
A
C
B540
AYWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
150
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
June, 2013 − Rev. 0
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
© Semiconductor Components Industries, LLC, 2013
A
1
MAXIMUM RATINGS
Rating
MARKING
DIAGRAM
1
Device
Package
Shipping†
MBR540MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
MBR540MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB540MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB540MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MBR540MFS/D
MBR540MFS, NRVB540MFS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
−
4.0
°C/W
0.44
0.50
0.54
0.58
6
0.100
20
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 5 Amps, TJ = 100°C)
(iF = 5 Amps, TJ = 25°C)
vF
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 100°C)
(Rated dc Voltage, TJ = 25°C)
iR
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
V
mA
MBR540MFS, NRVB540MFS
TYPICAL CHARACTERISTICS
10
iF, INSTANTANEOUS FORWARD
CURRENT (A)
TA = 175°C
TA = 150°C
TA = 100°C
1
TA = 25°C
TA = −40°C
0.1
0.2
0.3
0.4
0.5
0.1
0.2
0.3
0.4
0.5
0.6
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
TA = 175°C
TA = 100°C
1.E−04
0.7
TA = 175°C
1.E−01
TA = 150°C
1.E−03
1.E−02
TA = 150°C
1.E−03
TA = 100°C
1.E−04
1.E−05
TA = 25°C
1.E−06
TA = 25°C
1.E−05
1.E−06
1.E−07
1.E−08
1.E−07
TA = −40°C
0
5
10
TA = −40°C
1.E−08
15
20
25
30
35
40
1.E−09
0
5
10
15
20
25
30
35
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
C, JUNCTION CAPACITANCE (pF)
0
Figure 1. Typical Instantaneous Forward
Characteristics
1.E−02
TJ = 25°C
100
0
TA = −40°C
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E−01
10
TA = 25°C
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E+00
1.E−09
1.E−10
TA = 100°C
1
0.1
0.7
0.6
TA = 175°C
TA = 150°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
0
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.1
IF(AV), AVERAGE FORWARD CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
10
10
20
40
30
10
9
RqJC = 2.4°C/W
8
DC
7
6
Square Wave
5
4
3
2
1
0
60
80
100
120
140
160
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating TO−220AB
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3
40
MBR540MFS, NRVB540MFS
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
8
IPK/IAV = 20
7
IPK/IAV = 10
TJ = 175°C
6
5
IPK/IAV = 5
4
3
Square Wave
2
1
0
DC
0
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
50% Duty Cycle
R(t) (°C/W)
20%
10 10%
5%
2%
1
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 8. Thermal Characteristics
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4
1
10
100
1000
MBR540MFS, NRVB540MFS
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P
(SO8 FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
2
A
B
D1
2X
0.20 C
2
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
4X
E1
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
q
E
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
0.10 C
SIDE VIEW
8X
SOLDERING FOOTPRINT*
DETAIL A
3X
b
0.10
C A B
0.05
c
4X
1.270
0.750
1
4
0.965
K
1.330
PIN 5
(EXPOSED PAD)
G
4X
1.000
e/2
L
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
E2
L1
2X
0.905
2X
M
0.495
4.530
3.200
0.475
D2
2X
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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MBR540MFS/D