NTS12120EMFS, NRVTS12120EMFS Very Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices • Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection LED Lighting Instrumentation • MARKING DIAGRAM A A SO−8 FLAT LEAD CASE 488AA STYLE 2 TE1212 A Y W ZZ Mechanical Characteristics: • • • • 5,6 1,2,3 1 Typical Applications • • • • • TRENCH SCHOTTKY RECTIFIERS 12 AMPERES 120 VOLTS Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements A C TE1212 AYWWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device Package Shipping† NTS12120EMFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTS12120EMFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVTS12120EMFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NRVTS12120EMFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 March, 2014 − Rev. 1 1 Publication Order Number: NTS12120EMFS/D NTS12120EMFS, NRVTS12120EMFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 120 Average Rectified Forward Current (Rated VR, TC = 165°C) IF(AV) 12 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 163°C) IFRM 24 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 200 A Storage Temperature Range Tstg −65 to +175 °C TJ −55 to +175 °C EAS 100 mJ Operating Junction Temperature Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) V ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RθJC 2.0 − °C/W Symbol Typ Max Unit 0.6 0.735 − 0.83 0.515 0.588 − 0.69 1.73 3.75 − 55 mA mA 2.4 3.87 − 30 mA mA ELECTRICAL CHARACTERISTICS Rating Instantaneous Forward Voltage (Note 1) (IF = 6 A, TJ = 25°C) (IF = 12 A, TJ = 25°C) VF (IF = 6 A, TJ = 125°C) (IF = 12 A, TJ = 125°C) Instantaneous Reverse Current (Note 1) (VR = 90 V, TJ = 25°C) (Rated dc Voltage, TJ = 25°C) IR (VR = 90 V, TJ = 125°C) (Rated dc Voltage, TJ = 125°C) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 V NTS12120EMFS, NRVTS12120EMFS TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) TA = 125°C 10 TA = 150°C 1 TA = 175°C TA = 25°C TA = −55°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 TA = −55°C 0 0.1 0.2 0.3 0.4 0.6 0.5 0.7 0.8 Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E+00 TA = 175°C 1.E−02 TA = 150°C TA = 150°C TA = 125°C 1.E−02 TA = 125°C 0.9 TA = 175°C 1.E−01 1.E−03 1.E−03 1.E−04 1.E−04 TA = 25°C 1.E−05 1.E−05 TA = 25°C 1.E−06 0 10 20 30 40 50 60 1.E−06 70 90 100 110 120 80 0 10 20 30 40 50 60 70 80 90 100 110 120 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics TJ = 25°C 1000 100 0.1 1.E−07 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 10,000 C, JUNCTION CAPACITANCE (pF) TA = 25°C TA = 175°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−01 10 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E+00 1.E−07 TA = 150°C 0.1 0.9 TA = 125°C 10 IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 1 10 100 25 RqJC = 2.0 °C/W 20 DC 15 Square Wave 10 5 0 80 90 100 110 120 130 140 150 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating http://onsemi.com 3 160 170 NTS12120EMFS, NRVTS12120EMFS TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 20 IPK/IAV = 20 18 IPK/IAV = 10 TJ = 175°C 16 14 IPK/IAV = 5 12 10 8 Square Wave 6 4 2 0 DC 0 1 2 3 4 5 6 7 9 8 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 R(t) (°C/W) 10 1 0.1 0.01 50% Duty Cycle 20% 10% 5% 2% 1% Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 1 10 100 1000 PULSE TIME (sec) Figure 8. Thermal Characteristics R(t) (°C/W) 10 1 50% Duty Cycle 20% 10% 0.1 5% 2% 1% 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case http://onsemi.com 4 NTS12120EMFS, NRVTS12120EMFS PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE H 2X 0.20 C D 2 A B D1 2X 0.20 C 3 q E 2 2 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q 4X E1 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. c A1 4 TOP VIEW C 3X e 0.10 C SEATING PLANE DETAIL A A STYLE 2: PIN 1. ANODE 2. ANODE 3. ANODE 4. NO CONNECT 5. CATHODE 0.10 C SIDE VIEW SOLDERING FOOTPRINT* DETAIL A 3X 8X 0.10 C A B 0.05 c 4X e/2 1 4 0.965 K G 0.750 1.000 L PIN 5 (EXPOSED PAD) 4X 1.270 b MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ 1.330 2X 0.905 2X E2 L1 M 0.495 4.530 3.200 0.475 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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