Microwave RF Power Products Catalog ( 8.2 MB )

Power Matters.
RF & Microwave Diode and Transistor Products
Microsemi RFIS Integrated Solutions
RF & Microwave Diode and Transistor Products
Within this short form catalog are the combined product selection guides for Microsemi RF Integrated
Solutions (RFIS) business unit RF & microwave diodes and power transistors. RFIS diode products are
primarily designed, manufactured, and tested at our Lowell Massachusetts facility and the power transistors
are primarily designed, manufactured, and tested at our Santa Clara California facility. For sales and technical
assistance consult our website, manufacturer’s representative or distributor in your area, or contact the
appropriate organization directly:
Diode Products:
Power Transistor Products:
Microsemi Corporation
Microsemi Corporation
RF Integrated Solutions
RF Integrated Solutions
75 Technology Drive
3000 Oakmead Village Drive
Lowell, MA 01851-5293
Santa Clara, CA 95051-0808
+1.978.442.5600
+1.408.986.8031
+1.978.937.3748
+1.408.986.8120
www.microsemi.com
email: [email protected]
2
Table of Contents
Diode Products
Power Transistor Products
Overview: Diode Products
4
About RF & Microwave Power Transistor Products
26-27
PIN Diodes Selection Guide
5
GaN & SiC & SiC Wide Band Gap
28
Power Handling Reference
6
Pulsed High Power Pallets
29
GC4200 Series: Small Signal/High Speed Switching
7
Pulsed Primary Radar
GC4400 Series: Large Signal Switching/Attenuator
7
Avionics32-33
GC4700 Series: Limiter PIN Diodes
8
High Reliability Transistorsb
34-35
GC4800 Series: Planar Beam Lead PIN’s
8
HF/VHF/UHF Communications
36-37
GC4900 Series: Mesa Beam Lead PINs
8
Broadcast / TV
SM Ceramic MELF PINs
9
Microwave38
RoHS and MRI Models
9
General Purpose & Small Signal
39
30-31
38
Monolithic Microwave Surface Mount PIN Diodes
10
Linear Class A & AB
40
MRI PIN Diode Selector Guide
11
Bias Devices
40
Power PIN Diodes for Switching and Attenuation
12
Transistor Case Styles
Schottky Diodes Selector Guide
13
Enhanced Performance Surface Mount Products
14
Varactor Performance Guide
15
Tuning Varactor Selector Guide
16
MMSM Varactor Diodes
17
GaAs Varactor Diodes
18
Gunn Diodes
19
Comb Generators
20
Surface Mount Limiter
20
Pin Diode Limiter Assemblies
21
Switch Components
22
RF, Microwave & mmWave Packages
41-42
23-25
3
RF & Microwave Diode and Control Components
Microsemi’s RF diode and control component operations, located in Lowell, Massachusetts, brings over
30 years experience in manufacturing of high reliability
RF and microwave products. We supply a full range
of Silicon and Gallium Arsenide diodes, including PIN
and limiter diodes, tuning and multiplier varactors,
noise diodes, Schottky-barrier diodes, MNS chip
capacitors and Gunn Diodes. We are able to leverage
these best in class products in our solid state control
components and sensor products. Our extensive
product base allows us to support frequencies from
100 Hz through millimeter wave.
With high volume wafer fabrication now in place to
meet the competitive needs of our growing commercial and medical customer base, Microsemi’s Lowell
facility can deliver more cost-effective components
faster than ever for our longstanding military customers as well.
From our closely controlled RF/microwave diode
inventory we can match characteristics precisely to
maintain consistent component performance levels
over the full life of your system designs.
Our Lowell operation builds RF and microwave PIN
diode switches, limiters, comb generators, attenuators, phase shifters, and detectors in frequency ranges
to 40 GHz. All can be hermetically sealed to meet the
most stringent military or space requirements and can
be combined to include several functions in a single
high reliability package. Typical of these integrated
packages are switch/limiters, limiter/detectors, switch
matrices and switched filters..
Integrated packages can provide higher performance
benefits at lower cost than by designing with individual components. To assure the engineering expertise
that will attain your desired performance levels,
Microsemi only provides assemblies where we can
control the high-risk components. In that way, we’re
able to develop custom packaging that meets your
most demanding specifications.
4
In addition, we are continuing to develop low cost
surface mount PIN and Limiter solutions which offer
performance more often associated with expensive
chip and wire bonding assemblies. They are available
in several reflow friendly configurations which allow the
customer new opportunities for economical designs.
Microsemi also can offer a significant number of existing configurations to minimize your NRE and provides
many customers with microwave components no
longer available from their original suppliers. Our
extensive library of products and designs gives us the
ability to respond quickly with solutions to meet your
needs, quickly and cost effectively.
PIN Diodes
• Microsemi has a wide variety of GaAs and Silicon PIN diodes to suit your requirements
• From ultra-low Cj, Beam Lead PIN diodes for broadband switching to high power PIN diodes
• Designed for low frequency, low intermod switching and attenuation
PIN Diode Selection Guide
HIGH SPEED MICROWAVE SWITCHING: Chips & Beam Leaded
Typical Cj
(@Vpt)
(pF)
0.01
0.03
0.06
0.1
0.2
0.50
0.75
Max
Freq
(GHz)
40
24
18
12
8
4
2
40V
50V
MP6250
GC4946
MPP4203
70V/75V
100V
GC4270
GC4271
GC4272
GC4273
GC4275
GC4801
GC4210
GC4211
GC4212
GC4213
GC4215
250V
Outline
MP61001
GaAs Chip
Beam Leads / GaAs Flip Chip
Chips
Chips
GC4220
GC4221
GC4222
GC4223
GC4225
Chips / MMSMTM
Chips
Chips
HIGH SPEED MICROWAVE SWITCHING: Packaged
Typical CT
(@Vpt)
(pF)
0.02
0.03
0.06
0.1
0.2
0.50
0.75
1.2
Max
Freq
(GHz)
40
24
18
12
8
4
2
1
25V
40V/50V
70V/75V
100V
200V/250V
Pkg Type
MP61001
Flip Chip GaAs
Ceramic GaAs
Ceramic / GaAs
MP6250
MPP4203
MPP4204
MP61004
GC4270 GC4210
GC4220
GMP4201 GMP4211 GC4221
GMP4202 GMP4212 GC4222
GC4273 GMP4215 GMP4235
GC4275 GC4215
GC4225
Ceramic / MMSMTM
Ceramic / GigaMite
Ceramic / GigaMite / EPSM
Ceramic / GigaMite / EPSM
Ceramic / GigaMite / EPSM
MED - HIGH POWER RF SWITCHING & ATTENUATION: CHIPS
Max Freq
(GHz)
Typical Cj
(@Vpt)
(pF)
18
12
8
4
2
1
0.5
0.1
0.2
0.5
1
2
4.0
100V
300V
GC4410
GC4411
GC4412
GC4413
GC4430
GC4431
GC4432
GC4433
500V
750V
GC4490
GC4491
GC4492
GC4493
GC4494
1500V
Outline
GC4600
GC4601
Chips
Chips
Chips
Chips
Chips
Chips
MED - HIGH POWER RF SWITCHING & ATTENUATION: Packaged
Max Freq
(GHz)
12
8
4
2
1
0.5
Typical CT
(@Vpt)
(pF)
0.2
0.5
1
2
4.0
100V
300V
GC4410 GC4430
GC4411 GC4431
GC4413 GC4433
UM4301
500V
SM0502
SM0509
600V
750V
1000V
1500V
2000V
Pkg Type
GC4490
Ceramic
UM6006 GC4491
Ceramic
UM6606 GC4493
GC4600
Ceramic/MELF/Leaded/Stud
UM4306
UM4310 GC4601
Ceramic/MELF/Leaded/Stud
HUM2010 HUM2015 HUM2020 Ceramic/MELF/Leaded/Stud
5
PIN Diodes
PIN Diode Power Handling
Typical PIN Diode Power Handling (CW)
Frequency Band (GHz)
0.1-0.5
0.5-1.0
0.5-1.0
HUM
PIN Family
Series
UM
/
HUM
PIN Family
GC4600
Series
Series
Typ. Junction
4 pF
Capacitance
Typ. Junction
4 pF
2 pF
Capacitance Incident Power
OK
Incident Power +60 dBm
1.0-2.0
UM /
GC4600
UM /
Series
GC4600
GC4700
Series
2 pF
0.1-0.5
+60 dBm
+50OK
dBm
OK
MARGINAL
1 pF
1.0-2.0
2.04.0
Frequency
Band
(GHz)
UM4.0
/
GC4400
2.04.0-12
GC4600
GC4200
GC4400
GC4400
GC4700
GC4700
GC4200
GC4200
Series
Series
GC4700
GC4700
Series
Series
1 pF
0.5 pF
0.5 pF
0.2 pF
MARGINAL
NO
NO
OK
NO
MARGINAL
NO
MARGINAL
NO
4.0-12
GC4400
12-18
GC4200
GC4200
GC4700
GC4700
Series
GC4900
Series
0.2 pF
0.1 pF
18-40
> 40
GC4200
18-40
GC4700
GC4900
GC4800
/
Series
GaAs
MP
Series
0.1 pF
12-18
> 40
GC4800 /
GaAs MP
Series
GaAs
MP
Series
GaAs MP
Series
0.05 pF
< 0.05 pF
0.05 pF
< 0.05 pF
NO
NO
NO
NO
NO
NO
NO
NO
NO
NO
NO
NO
NO
NO
NO
NO
+50 dBm
+40OK
dBm
OKOK
MARGINAL
OK
MARGINAL
OK
NO
OK
+40 dBm
+30OK
dBm
OKOK
OK
OK
OK
OK
MARGINAL
OK
NO
MARGINAL
+30 dBm
+20OK
dBm
OKOK
OK
OK
OK
OK
OK
OK
+20 dBm
+10OK
dBm
OKOK
OK
OK
OK
OK
OK
OK
OK
OK
OK
OK
+10 dBm
OK
OK
OK
OK
OK
OK
OK
NO
OK
NO
NO
MARGINAL
MARGINAL
OK
OK
MARGINAL
MARGINAL
NO
OK
NO
MARGINAL
OK
MARGINAL
OK
OK
Packaging for Power Handling
Packaging
for Power
Handling
Packaging
for Power
Handling
Package Type
Package Type
Ceramic
MELF
MMSM
Giga Mite
EPSM
Stripline
Glass Axial
Plastic
6
Lp
Ceramic
MELF
Excellent
Lp
Cp
Excellent
Good
Excellent
Very
Good
Fair
MMSM
Good
Very
Very Good
Giga Mite
Good
EPSM
Good
Very Good
Good
Good
Stripline
Good
Good
Fair
Glass
Axial
Good
Good
Poor
Plastic
Fair
Good
Poor
Fair
Cp
Rs
Excellent
Fair
Excellent
Thermal
Performance
Rs
Cost
Thermal
Max
(θP)
Performance
Cost
Frequency
(θP)
(GHz)
Excellent
Excellent
High
Excellent
Very
Good
Moderate
Excellent
High
18
Excellent
Very Good
Very
Good
Good
Moderate
Good
Good
Very
Good
Good
Good
Good
Good
Good
Good
Fair
Good
Good
Good
Good
Very
Good
Good
Good
Good
Fair
Fair
Poor
Low
Very
Good
Good
Low
Fair
Moderate
Poor
Moderate
Poor
Moderate
Fair
Poor
Low
2Low
Max
Comments
Hermetic
Frequency
(GHz)
Comments
Hermetic
Most products available
18
Yes
Only select PIN diodes available
Yes
Most products
available
Yes2
Yes8
8Low
No6
Moderate
6
No6
Moderate
6
No8
Moderate
1.5No
8
Yes or
Low
1.5
Yes2
2
No
Only select
diodes
available
select
PINs and varactors
No PINOnly
Only select
andselect
varactors
Only
PINs, varactors and Schottkys
No PINs
Most
products
available
No PINs,
Only select
varactors
and
Schottkys
Most products available
Yesproducts
or No available
Most
Only select PINs, varactors, and Schottkys
Yes
Most products
available
Only
select PINs,
varactors, and Schottkys
No PINs,
Only select
varactors,
and Schottkys
Only select PINs, varactors, and Schottkys
PIN Diodes
GC4200
Series/SmallSignal/High
Signal/High
Speed
Switching
GC4200 Series/Small
Speed
Switching
Chip
Electrical
Specifications:
T
25˚C
Chip Electrical Specifications:ATA 25°C
JUNCTION
BREAKDOWN
CAPACITANCE
VOLTAGE
MODEL
¹
VB @ 10uA
NUMBER
CJ @-10V
(MIN)(V)
(MAX) (pF)
GC4270
GC4271
GC4272
GC4273
GC4274
GC4275
GC4210
GC4211
GC4212
GC4213
GC4214
GC4215
GC4220
GC4221
GC4222
GC4223
GC4224
GC4225
70
70
70
70
70
70
100
100
100
100
100
100
250
250
250
250
250
250
0.06
0.1
0.2
0.3
0.4
0.5
0.06
0.1
0.2
0.3
0.4
0.5
0.06
0.1
0.2
0.3
0.4
0.5
SERIES
RESISTENCE²
(Rs @20mA, 1
GHz)
(MAX) (Ohms)
CARRIER
LIFETIME
TL
(IR=6 mA,
IF=10 mA)
(Typ) (nS)
THERMAL
RESISTANCE
(MAX) (˚C/W)
1.5
1
0.8
0.7
0.6
0.5
1.5
1
0.75
0.6
0.5
0.35
2.5
2
1.5
1
0.8
0.6
100
100
100
100
100
100
200
200
200
200
200
200
500
500
500
500
500
500
80
70
70
60
50
40
80
70
70
60
50
40
80
70
70
60
50
40
GC4400 Series/Large Signal Switching/Attenuator
Chip Electrical Specifications: TA 25°C
MODEL
NUMBER
GC4410
GC4411
GC4412
GC4413
GC4430
GC4431
GC4432
GC4433
GC4490
GC4491
GC4492
GC4493
GC4494
GC4495
CARRIER
LIFETIME
BREAKDOWN
JUNCTION
THERMAL
SERIES RESISTENCE²
TL
VOLTAGE
CAPACITANCE ¹
RESISTANCE
(Rs @100mA, 100 MHz)
VB @ 10uA
CJ @-50V
(IR=6 mA, IF=10
(MAX) (˚C/W)
(MAX) (Ohms)
(MIN)(V)
(MAX) (pF)
mA)
(Typ) (uS)
100
100
100
100
300
300
300
300
750
750
750
750
750
750
0.1
0.25
0.5
0.75
0.1
0.25
0.5
0.75
0.1
0.25
0.5
0.75
1.3
2.5
0.6
0.5
0.4
0.3
1.5
1.2
1
0.8
1.5
1.2
1
0.8
0.35
0.3
0.4
0.6
0.8
1.2
0.6
1.2
1.5
2
1
2
3
4
5
6
40
25
20
10
40
30
20
10
30
25
20
10
7
5
Notes:
1.Capacitance is measured at 1 MHz and -10 volts.
2.Resistance is measured using transmission loss techniques.
3.These devices are not available in all case styles. Please consult the factory for specific package styles offered
7
PIN Diodes
GC4700 Series/Large Signal Switching/Attenuator
Chip Electrical Specifications: TA 25°C
BREAKDOWN
VOLTAGE
MODEL
VB @ 10uA
NUMBER
(MIN)(V)
GC4701
GC4702
GC4711
GC4712
GC4713
GC4721
GC4722
GC4723
GC4731
GC4732
GC4741
GC4742
GC4750 3
JUNCTION
CAPACITANCE
CJ @ 0V
(Typ) (pF)
JUNCTION
CAPACITANCE
CJ @ -6V
(Max) (pF)
JUNCTION
CAPACITANCE
CJ @ -50V
(Max) (pF)
SERIES
RESISTENCE²
(Rs @10mA, 1
GHz)
(MAX) (Ohms)
0.2
0.5
0.2
0.5
0.7
0.2
0.6
0.8
0.12
0.2
0.12
0.2
0.15
0.3
0.15
0.3
0.5
0.15
0.3
0.5
0.1
0.15
0.1
0.15
1.5
1.2
1.5
1.2
1
1.5
1
0.5
20
1.5
2
1.5
0.25
1.5
1.2
1.5
1.2
1
1.5
1
0.5
20
1.5
2
1.5
3.0 @50mA
20
20
45
45
45
120
120
120
15
15
30
30
250
CARRIER
LIFETIME
THERMAL
TL
RESISTANCE
(IR=6 mA,
(Typ) (˚C/W)
IF=10 mA)
(Typ) (uS)
5
20
10
12
10
15
15
10
20
6
50
1.2
50
0.5
100
0.3
5
30
5
20
7
20
7
15
300
4
Notes: 1. Pulse length 1 microsecond. 2. As measure in style 30 package. 3. Supplied as -002 style, dual mesa.
GC4800 Series Planar Beam Lead PINs
GC4800
Series/Planar
Beam Lead PINs
Electrical Specifications:
TA 25˚C
Electrical Specifications: TA 25°C
MODEL
NUMBER
GC4800A – 14
GC4801 – 14
GC4802 – 14
GC4810 - 16
SERIES
SERIES
BREAKDOWN
CAPACITANCE¹ CAPACITANCE¹ RESISTENCE1 RESISTENCE1
VOLTAGE
CT @-50V
CT @-10V
(Rs @20mA)
(Rs @50mA)
VB @ 10uA
(Typ/Max) (pF) (Typ/Max) (pF)
(Typ/Max)
(Typ/Max)
(MIN)(V)
(Ohms)
(Ohms)
80
80
100
150
0.016 / 0.020
0.020
-0.018 / 0.020
0.060 / 0.070
0.025 / 0.035
4.5 / 6.5
3.5 / 4.0
2.2 / 3.0
3.0 / 4.0
CARRIER
LIFETIME
TL
(IR=6 mA,
IF=10 mA)
(Typ) (uS)
150
150
150
300
SWITCHING
SPEED
TS
(Max) (nS)
30
30
30
50
Notes:
Notes: 1. RS and CT are determined using Loss and Isolation measurements at F = 2.2 GHz.
1 - RS and CT are determined using Loss and Isolation measurements at F = 2.2 GHz.
GC4900 Series/Mesa Beam Lead PINs
GC4900Series
MESA Beam Lead PINs
Electrical
Specifications:
TA 25°C
DC PERFORMANCE
MODEL
NUMBER
BREAKDOWN
VOLTAGE
VB @ 10uA
(MIN)(V)
CAPACITANCE
CT @-10V
(Typ/Max) (pF)
GC4902 - 12
GC4903 - 12
GC4941 - 12
GC4942 - 12
GC4943 - 12
GC4944 - 12
GC4945 - 12
GC4946 - 12
100
100
50
50
50
50
50
50
0.025
0.030
0.060
0.040
0.030
0.025
0.022
0.020
SERIES
RESISTENCE
(Rs @10mA,
F=2.2GHz)
(Max) (Ohms)
1.5
2
3
3.5
5.5
6.5
RF PERFORMANCE TYP
CARRIER
SERIES
LIFETIME
RESISTENCE
TL
(Rs @50mA,
(IR=6 mA, IF=10
F=2.2GHz)
mA)
(Max) (Ohms)
(Typ) (uS)
3
80
2.5
80
50
45
40
35
40
40
Notes: 1. Insertion loss and Isolation are test at F = 2.2 GHz using transmission loss techniques.
8
1
Isol (dB)
@VR=10V
F=2.2 GHZ
IL (dB)
IF=10mA
F=2.2 GHZ
22
26
27.5
29
30.5
32
0.14
0.17
0.27
0.3
0.45
0.51
PIN Diodes
SM SERIES CERAMIC MELF PINS
ELECTRICAL SPECIFICATIONS at 25°C
VOLTAGE
CASE
RATING
SM
Series
Ceramic
MELF
PINs
SM Series
Ceramic
MELF PINs
PART NO.
STYLE
IR < 10µa
Electrical Specifications atSUGGESTED
TA = 25˚C
Electrical Specifications: TA 25°C
VR
PART
NUMBER
TOTAL
BREAKDOWN
M1
500 1
VOLTAGE
CAPACITANCE
VB @ 10uA
CT @ -50V
SM0504
M1
500
(MIN)(V)
(Max) (pF)
CASESM0502
STYLE
SUGGESTED
TOTAL
CAPACITANCE
F = 1 MHz
VR=50V
pF (MAX)
SERIES
0.50
RESISTENCE²
(Rs @100mA)
0.60
(MAX) (Ohms)
SERIES
RESISTANCE
If=100mA
F=100MHz
OHM (MAX)
SERIES
0.70
RESISTENCE²
(Rs @200mA)
0.60
(MAX) (Ohms)
SERIES
CARRIER
TYPICAL
RESISTANCE
LIFETIME
THERMAL
If=200mA
If=10mA µSEC RESISTANCE
F=100MHz
(TYP)
°C/W
OHM (TYP)
TL
0.55 THERMAL
1.0
(IR=6 mA
RESISTANCE
IF=10 mA)
0.45 (Typ) (˚C/W)
1.5
(Typ) (uS)
SM0508
M1
500
0.90
0.40
M1
500
0.50
0.70
0.55
1.00.25
M1
500
0.60
0.60
0.45
1.50.20
SM0509
M1
500
1.20
0.35
M1
500
0.90
0.40
0.25
2.0
SM0511
M1
500
1.25
0.30
M1
500
1.20
0.35
0.20
2.50.15
M1
500
1.25
0.30
0.15
3.00.12
SM0512
M1
500
1.50
0.25
M1
500
1.50
0.25
0.12
3.5
SM0812
M1
700
1.30
0.40
0.25
M1
700
1.30
0.40
0.25
4.0
M1
700
1.30
0.35
0.20
4.50.20
SM1001
M1
700
1.30
0.35
M1
50
1.20
.75 @ 50mA
0.20
4.0
SM1002
M1
50
1.20
.75 @50mA
0.20
M1
35
1.2 @ 20V
.50 @ 10mA
0.10
0.6
SM1003measured M1
35
1.2 @ 20V
.50at@F=100
10mA
0.10
Notes: 1. Total Capacitance
at F=1 MHz.
2. Series Resistance
measured
MHz.
SM0502
SM0504
SM0508
SM0509
SM0511
SM0512
SM0812
SM1001
SM1002
SM1003
35
20
15
15
15
15
15
15
15
25
35
20
2.0
15
2.5
15
3.0
15
3.5
15
4.0
15
4.5
15
4.0
15
0.6
25
RoHS and MRI Models
RoHS
and MRI Models
RoHS Compliant PN
SMX0502 – M1
SMX0504 – M1
SMX0508 – M1
SMX0509 – M1
SMX0511 – M1
SMX0512 – M1
SMX1002 – M1
SMX1003 – M1
Non-Mag. / RoHS PN
SMX0502MR – M1
SMX0504MR – M1
SMX0508MR – M1
SMX0509MR – M1
SMX0511MR – M1
SMX0512MR – M1
SMX1002MR – M1
SMX1003MR – M1
M1
+ ‘Non Magnetic’ refers to any products that are designed with low and ultra low
magnetic materials for use in MRI systems
++ RoHS versions are supplied with a matte tin finish.
DIM
INCHES
MIN
MAX
0.080
0.095
B
0.115
0.135
C
0.008
0.030
A
Microsemi
Base Model
SM0502 – M1
SM0504 – M1
SM0508 – M1
SM0509 – M1
SM0511 – M1
SM0512 – M1
SM1002 – M1
SM1003 – M1
R
9
Monolithic Microwave
Monolithic Microwave Surface Mount
(MMSM) PIN Diodes
This series of surface mount PIN diodes utilize new and unique monolithic MMSM
technology. The technology is a package/device integration accomplished at the
wafer fabrication level. Since the cathode and anode interconnections utilize precision
photolithographic techniques rather than wire bonds, parasitic package inductance is tightly
controlled. The package parasitics provide smooth non-resonant functionality through
12GHz.
Key Features
Applications Benefits
• Tape and Reeled for Automatic Assembly
• 2.4 GHz PCS communications
• Low Series Inductance (<0.2nH typical)
• 5.7 GHz Wireless LANS
• Low Parasitic Capacitance (0.06 pf typical)
• Solid State Switches, Attenuators, Limiters
• Meets All Commercial Qualification Requirements
• Phase Shifters
• 0204 Outline
• Widest bandwidth of any commercial surface mounted devices
• Low thermal resistance
• Ultra tight parametric distribution
Electrical Specifications: TA 25°C
PART
NUMBER
TOTAL
BREAKDOWN
SERIES
SERIES
SERIES
VOLTAGE
CAPACITANCE1 RESISTENCE² RESISTENCE² RESISTENCE²
OUTLINE
VB @ 10uA
(Rs @0.01mA)
(Rs @1mA)
(Rs @10mA)
CT @ -10V
(Typ) (Ohms)
(Ohms)
(Max) (Ohms)
(Min)(V)
(Max) (pF)
MPP4201
MPP4202
MPP4203
MPP4204
MPP4205
MPP4206
MPL4700
MPL4701
206
206
206
206
206
206
206
206
70
50
50
25
70
200
25
15
MPL4702
406
50B
0.2
0.15
0.1
0.15
0.15
0.15
0.15
Notes:
1. Total Capacitance measured at F=1 MHz.
2. Series Resistance measured at F=100 MHz.
10
250
7-16
5 (Typ)
2
12
TL
(IR=6 mA
IF=10 mA)
(Typ) (nS)
APPLICATION
2.0
2.5A
150
50
50
20
150
500
20
10
Attenuator
MRI
High Isolation Switch
High Speed Switch
Attenuator
Attenuator/Switch
Receiver Protection
Receiver Protection
2
30
Anti-parallel Pair
MRI Surface Coil Detune
2
5
2.5
A
MRI Applications Matrix
MRI - APPLICATIONS MATRIX FOR RF PIN DIODES
MRI - APPLICATIONS MATRIX FOR RF PIN DIODES
VOLUME / BIRD CAGE COILS – Switching Diodes
Volume/Bird
Cage Coils—Switching Diodes
VOLUME
/ BIRD CAGE
COILS – Switching
Diodes
(End
ring resonant
/ anti-resonant
Switching
Diodes)
(End ring resonant / anti-resonant Switching Diodes)
(End ring resonant/anti-resonant Switching Diodes)
Model #
VBR
Model #
HUM2015
HUM2015
HUM2020
HUM2020
VBR
1500
1500
2000
2000
CT(pF)
CT(pF)
3.5
Wi (um)
Wi275
(um)
3.5
3.5
275
275
τ(µs) Rs(Ω)1 @IF(mA)
τ(µs)
20 Rs(Ω)
0.1 1 @IF(mA)
500
20
20
0.1
0.1
500
500
Application
Application
Switching
Switching
Switching
SURFACE COILS – RECEIVE ARRAY PIN Diodes
(LOOP ARRAY
OR–STRIP
ARRAY
– 4 CHANNELS
SURFACE
COILS
RECEIVE
ARRAY
PIN Diodes AND NX4 CHANNELS)
Surface
Coil—Receive
Array
PIN Diodes
(LOOP ARRAY OR STRIP ARRAY – 4 CHANNELS AND NX4 CHANNELS)
(Loop Array or Strip Array 4 Channels and NX4
Channels)
1
Model #
Model #
UMX5601
UMX5601
UM7201
UM7201
UM9701
UM9701
UM9995
UM9995
UMX5101
UMX5101
UM9989AP3
UM9989AP3
MPL4702 3
MPL4702 3
VBR
VBR
100
100
100
100
100
100
100
100
100
75
75
50
50
CT(pF)
CT(pF)
2.5
2.5
2.2
2.2
1.8
1.8
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
2
2
2
2
Wi (um)
Wi (um)
175
175
50
50
50
100
100
125
125
-----
τ(µs) Rs(Ω) @IF(mA)
τ(µs) Rs(Ω)1 @IF(mA)
5
5
1.5
1.5
1.5
2
2
0.75
0.75
0.25
0.25
0.8
0.8
0.6
0.6
50
50
100
100
10
10
100
100
2.5
2.5
0.004
0.004
0.03
0.03
0.8
0.8
2
2
2
2
50
50
100
100
10
10
Application
Application
ULTRA-Low Magnetic
Receive
Array
ULTRA-Low
Magnetic
Receive
Array
Receive Array
Receive Array
Receive
Array
ULTRA-Low Magnetic
Recieve Array
ULTRA-Low
Magnetic
Recieve Array
ULTRA-Low Magnetic
Recieve Array
ULTRA-Low
Magnetic
Recieve
Array
Low Magnetic
Recieve
Array
Low Magnetic
Low Magnetic
Recieve
Array
Recieve
Array
Low
Magnetic
Recieve Array
TRANSMIT / RECEIVE Control Boards
Transmit/Receiver Control Boards
Model #
VBR
CT(pF)
Wi (um)
UM4001
UM4301
UM7301
SMX0512MR
UM7101
UM6201
UM9415
100
100
100
500
100
100
50
3
2.2
0.7
1.5
1.2
1.1
3
175
325
325
50
100
50
175
τ(µs) Rs(Ω)1 @IF(mA)
5
6
4
3.5
2
0.6
5
0.25
1.5
3
0.35
0.6
0.4
0.75
500
100
100
100
100
100
50
T/R
T/R
T/R
T/R
T/R
T/R
T/R
Application
Control
Control
Control
Control
Control
Control
Control
RECEIVER Protection Circuits
Receiver Protection Circuits
Model #
VBR
CT(pF)
Wi (um)
UM9989
UM1089
UM7201
SMX0509MR
MPP4204
MPL4702 3
UM9415
75
75
100
500
25
50
50
1.2
1.5
2.2
1.2
0.15
1.22
3
--50
50
--175
Notes:
τ(µs) Rs(Ω)1 @IF(mA)
0.006
0.015
1.5
2.5
0.02
0.03
5
2
0.8
0.25
0.2
2
2
0.75
Notes:
1) Series Resistance (RS) is measured at 100MHz.
1. Series Resistance (RS) is measured at 100MHz.
2) Nominal Ct per Diode.
2. Nominal Ct per Diode.
3) Antiparallel Pairs
3. Anti-parallel Pairs
100
100
100
200
10
10
50
Application
Receiver Protection
Receiver Protection
Receiver Protection
Receiver Protection
Receiver Protection
Receiver Protection
Receiver Protection
11
Power PIN Diodes
POWER PIN
Forfor
Switching
and Attenuation
Power
PINDIODES
Diodes
Switching
and Attenuation
Featuring fast swithing products through High Power / Low IM products for TR switching contol
Featuring fast switching products through High Power / Low IM products for TR switching contol
Category
HIGH POWER PIN DIODE
Up to 2000V
3.4
RP
TL
RP @30V
(Min/Typ)
@100V
(Min)
(uS)
(Min)
(kOhms)
(kOhms)
200
Rs@100
mA
(Max)
(Ohms)
RoHS
Low Mag
Available
100
10 / 30
100
5 / 15
0.5
Yes
Yes
Vb
(Min)
(V)
PN
200
500
1000
2000
100
500
1000
1500
100
200
600
1000
100
200
600
1000
HUM2002
HUM2005
HUM2010
HUM2020
UMX5601
UMX5605
UMX5610
UMX5515
UM4301
UM4302
UM4306
UM4310
UM7301
UM7302
UM7306
UM7310
Vb
(Min)
(V)
PN
ULTRA LOW MAGNETING
MED Power Switching
Up to 1500V
2.6
SWITCHING / ATTENUATION
MED Power
Up to 1000V
2.2
200
6
1.5
Yes
SWITCHING / ATTENUATION
MED Power
Up to 1000V
0.7
150
4
3
Yes
CT@50V
(Typ)
(pF)
G @0V
(Max)
(uS)
TL
(Typ)
(nS)
Rs@100
mA
(Typ)
(Ohms)
1.2
40
6
2
Yes
Yes
75
UM9989
2.4
1.5
40
15
0.8
Yes
Yes
75
UM9989AP
UM9989
Category
FAST TURN ON
RECIEVER PROTECTION
ANTI PARALLEL CONFIGURATION
FAST TURN ON
RECIEVER PROTECTION
Category
SURFACE MOUNT
SWITCHING DIODE
POWER PIN DIODES
12
CT@100V CT@50V
(Typ)
(Typ)
(pF)
(pF)
CT@0V
(Typ)
(pF)
CT@50V
(Typ)
(pF)
0.75
Rp
CT@100
Rp @0V
@100V
V
(Min)
(Min)
(Max)
(kOhms)
(pF)
(kOhms)
5
0.4
300
4
Rs@100
mA
(Typ)
(Ohms)
0.5
2
2.2
TL
(Typ)
(uS)
Yes
RoHS
Low Mag
Available
RoHS
Low Mag
Available
Yes
Yes
Yes
Vb
(Min)
(V)
PN
75
UM9989
100
200
600
1000
UM6601
UM6602
UM6606
UM6610
Schottky Diodes
Schottky Mixer Diodes
• Monolithic design for lowest parasitics
• Can be supplied as monolithic or as packaged device
• Low Conversion Loss
• Singe, T & Quad configurations available
• Suitable for applications to
26.5 GHz
• RoHS Compliant
• Excellent Noise Figure
Freq.
Range
PART
NUMBER
Barrier
TOTAL
BREAKDOWN
FORWARD
CAPACITANCE VOLTAGE
VOLTAGE
CT @ 0V
VB @ 10uA
VF @ 1mA
(Max) (mV)
(Min)(V)
(Max) (pF)
Ku-Ka
GC9901
X
GC9902
ULTRA-LOW
2
C
GC9903
S
GC9904
Ku-Ka
GC9911
X
GC9912
LOW
2
C
GC9913
S
GC9914
Ku-Ka
GC9921
X
GC9922
LOW-MED
2
C
GC9923
S
GC9924
Ku-Ka
GC9931
X
GC9932
MEDIUM
3
C
GC9933
Electrical
Specifications
at TA = 25˚C
S
GC9934
Ku-Ka
GC9941
X
GC9942
JUNCTION
HIGH
Rs4 2
C
GC9943 CAPACITANCE
PART NUMBER
(Max)
S
GC9944
CJ @ 0V
(Typ) (pF)
MS8001
(Ohms)
0.12
6
GaAs
Schottky
Barrier
Diodes
MS8002
Electrical
Specifications0.1
at TA = 25˚C 6
MS8003
0.07 TA 25°C
Electrical
Specifications:
MS8004
0.06
JUNCTION
CAPACITANCE
PART NUMBER
CJ @ 0V
Flip Chip GaAs Schottky
(Typ)Diodes
(pF)
MS8001
MS8002
MS8003
MS8004
6
6
Rs 2
(Max)
(Ohms)
0.12
0.1
0.07
0.06
6
6
6
6
Rd
@ IF =
5mA
(Max)
(Ohms)
NF ssbs
Typ (dB)
0.10
0.15
0.3
0.5
0.10
0.15
0.3
0.5
0.10
0.15
0.3
0.5
0.10
0.15
0.3
0.5
0.10
0.15
Typical 0.3
NF ssbs 4
LO Freq
0.5(Typ) (dB)
310
280
270
250
360
350
340
330
440
430
410
390
540
530
520
500
650
630
620Zif
(Typ)
600
(Ohms)
(Min)(V)
9.375
5.6
16
5.6
24
6.5
36
6.5
Typical
NF ssbs 4
LO Freq
(Typ) (dB)
(GHz)
250–500
250–500
250–500
250–500
Zif
(Typ)
(Ohms)
5
5
5
5
VB @
10uA
(Min)(V)
5.6
5.6
6.5
6.5
250–500
250–500
250–500
250–500
5
5
5
5
Delta VF
(mV)
VB @
10uA
(Min)(V)
(GHz)
9.375
16
24
36
18
14
12
10
18
14
12
10
18
14
12
10
18
14
12
10
20
16
V @
12 B
10uA
10
6.5
6
5.5
5.5
6.5
6
5.5
5.5
6.5
6
5.5
5.5
6.75
6.25
5.75
5.5
7
6.25
5.75
5.75
Zif
(Typ)
(Ohms)
140
170
200
250
300
Flip
Chip
GaAs
Schottky
Barrier Diodes
Flip Chip
GaAs
Schottky
Diodes
Electrical Specifications at TA = 25˚C
Electrical Specifications: TA 25°C
Rs
@10mA
(Max)
(Ohms)
VF
@10mA
(mV)
MS8150-P2613
0.08
7
MS8151-P2613
0.06
9
Electrical Specifications at TA = 25˚C
MS8250 - P2920
0.08
7
MS8251 - P2920
0.06
9
Rs
CAPACITANCE
@10mA
CJ @ 0V
PART NUMBER
(Max)
(Max) (pF)
(Ohms)
650 - 750
600 - 800
650 - 750
600 - 800
VF
@10mA
(mV)
PART NUMBER
MS8150-P2613
MS8151-P2613
MS8250 - P2920
MS8251 - P2920
CAPACITANCE
CJ @ 0V
(Max) (pF)
0.08
0.06
0.08
0.06
7
9
7
9
650 - 750
600 - 800
650 - 750
600 - 800
na
na
10
10
Delta VF
(mV)
na
na
10
10
Description
3
3
3
3
VB @
10uA
(Min)(V)
Low Rs Flip Chip - Single
Low Ct Flip Chip - Single
Low Rs Flip Chip - Antiparallel
Low Ct Flip Chip - Antiparallel
3
3
3
3
Low Rs Flip Chip - Single
Low Ct Flip Chip - Single
Low Rs Flip Chip - Antiparallel
Low Ct Flip Chip - Antiparallel
Description
13
Enhanced Performance Surface Mount
EPSM PIN Diodes
EPSM PIN Diodes
EPSM
PIN&Diodes
for
Attenuation
for Switching
Switching &
Attenuation
For Switching and Attenuation
PART
PART
NUMBER
NUMBER
LSP1000
LSP1000
LSP1002
LSP1002
LSP1004
LSP1004
LSP1011
LSP1011
LSP1012
LSP1012
T
TLL
(I
(IRR=6
=6 mA
mA
mA)
IIF=10
F=10 mA)
(Typ)
(Typ) (nS)
(nS)
Application
Application
80 nS
nS
80
1500
1500 nS
nS
150
150 nS
nS
2000 nS
nS
2000
5
5 nS
nS
Switch
Switch
Attenuator
Attenuator
Switch
Switch
Attenuator
Attenuator
Limiter
Limiter
TOTAL
TOTAL
CAPACITANCE
CAPACITANCE
CT @
-4V
C
T @ -4V
(Max)
(Max) (pF)
(pF)
TOTAL
TOTAL
CAPACITANCE
CAPACITANCE
C
CTT @
@ -8V
-8V
(Max)
(Max) (pF)
(pF)
Q (4V/50MHz)
(4V/50MHz)
Q
min
min
12
12
9
9
6
6
4.5
4.5
3
3
1.5
1.5
0.8
0.8
0.6
0.6
0.4
0.4
6.20
6.20
4.7
4.7
3.2
3.2
2.7
2.7
1.7
1.7
1
1
0.55
0.55
0.45
0.45
0.35
0.35
400
400
500
500
600
600
750
750
900
900
1200
1200
1400
1400
1600
1600
1800
1800
BREAKDOWN
TOTAL
BREAKDOWN
TOTAL
Rs
Rs
VOLTAGE
CAPACITANCE
VOLTAGE
CAPACITANCE
@ IIF
@
F
V
@
10uA
C
@
V
B
T
R
VB @ 10uA
CT @ VR
(Max)
(Max) (Ohms)
(Ohms)
(Max)
(Min)(V)
(Max) (pF)
(pF)
(Min)(V)
35
0.28 @
@ 5V
5V
2.5 @
@ 5mA
5mA
35
0.28
2.5
100
0.32
4.0
100
0.32 @
@ 50V
50V
4.0 @
@ 100mA
100mA
35
0.75
0.6
35
0.75 @
@ 20V
20V
0.6 @
@ 10mA
10mA
200
0.35 @
@ 50V
50V
2.0 @
@ 100mA
100mA
200
0.35
2.0
20
0.35
1.8
20
0.35 @
@ 10V
10V
1.8 Ohms
Ohms @
@ 10mA
10mA
EPSM
Hyperabrupt
12V
EPSM
Super
Hyperabrupt
12V
EPSM Super
Super
Hyperabrupt
12V
Varactors for Low Voltage VCOs
Varactors forfor
Low
Voltage
VCOs VCOs
Varactors
Low
Voltage
PART
PART
NUMBER
NUMBER
KV1913A
KV1913A
KV1953A
KV1953A
KV1923A
KV1923A
KV1933A
KV1933A
KV1943A
KV1943A
KV1963A
KV1963A
KV1973A
KV1973A
KV1983A
KV1983A
KV1993A
KV1993A
TOTAL
TOTAL
TOTAL
TOTAL
CAPACITANCE
CAPACITANCE
CAPACITANCE
CAPACITANCE
CT @
@ -2.5V
-2.5V
C
T
CT @
-1.0V
C
T @ -1.0V
(Min
(Min -- Max)
Max)
(Min)
(pF)
(Min) (pF)
(pF)
(pF)
36
18
36 pF
pF
18 -- 27
27
26
13
26 pF
pF
13 -- 20
20
17
8.5
17 pF
pF
8.5 -- 13
13
13 pF
pF
6.5 -- 10
10
13
6.5
9
4.5
9 pF
pF
4.5 -- 6.5
6.5
4
2.0
4 pF
pF
2.0 -- 3.0
3.0
1.8
1.1
1.8 pF
pF
1.1 -- 1.5
1.5
1.2
0.8
1.2 pF
pF
0.8 -- 1.1
1.1
0.6 pF
pF
0.5 -- 0.8
0.8
0.6
0.5
Microwave
Hyperabrupt
22V Varactors
Microwave Hyperabrupt
22V Varactors
for Wide Bandwidth VCOs
for
Wide Bandwidth VCOs
PART
NUMBER
TOTAL
CAPACITANCE
CTT @0V
(Typ) (pF)
KV2163
KV2153
KV2143
KV2133
KV2123
KV2113
26 pF
13.5 pF
7 pF
5 pF
3 pF
2 pF
TOTAL
CAPACITANCE
CTT @ -4.0V
(Min - Max)
(pF)
8.75 - 10.80
4.45 - 5.50
2.65 - 3.30
1.75 - 2.20
1.30 - 1.65
0.85 - 1.10
TOTAL
CAPACITANCE
CTT @ -20V
(Max) (pF)
Q
(4V/50M
Hz) min
2.5
1.3
0.9
0.7
0.55
0.45
400
600
700
850
1000
1200
Microwave Abrupt
30V Varactors
Microwave
Abrupt
30Vfor
Varactors
Moderate Bandwidth, Low Noise VCOs
for Moderate Bandwidth, Low Noise VCOs
14
PART
NUMBER
CT0/CT4 (min)
TOTAL
CAPACITANCE
CTT @ -4.0V
(+ / - 10%) (pF)
CT4/CT30 (min)
Q
(4V/50M
Hz) min
GC1300
GC1301
GC1302
GC1303
GC1304
GC1305
GC1306
GC1307
GC1308
GC1309
GC1310
1.5
1.6
1.7
1.8
1.9
2
2
2.1
2.1
2.1
2.1
0.8
1.0
1.2
1.5
1.8
2.2
2.7
3.3
3.9
4.7
5.6
1.45
1.55
1.6
1.65
1.7
1.75
1.8
1.85
1.85
1.85
1.85
3900
3800
3700
3600
3500
3400
3300
3100
2700
2600
2500
Tuning Varactors
Varactor Category Performance Guide
Category
Abrupt GaAs
Abrupt Silicon
Hyperabrupt
GaAs
Hyperabrupt
Silicon
Low "S" Linear
FLTVARS
High "S" Linear
FLTVARS
Silicon
Super
Hyperabrupts
Model Number or
Family
MV20000
MV21000
GC1200; GC1300;
GC1500; 1N5400
GC1600; 1N5400
GC1700; 1N5100
MV34000;
MV30000; MV31000
MV32000
KV2100; MPV2100
GMV2100
KV2101
KV2201
KV2301
KV2401
KV2501
KV2601
KV2701
KV2801
KV3201; KV31S1
KV3901; KV38S2
Max Voltage
Typical Ratio
15V
30V
3:1
4:1
30V
4:1
45V
60V
15V
5:1
6:1
6:1
30V
11:1
Mod Sens
Linearity
Relative Q or
VCO Phase
Noise
Poor; Exponential
Best
Good
(Mid-Range)
Good - Excellent
22V
11:1
30V
11:1
Good (Mid Range)
Very Good
GC15000
22V
6:1
Excellent
Excellent
GC15000
22V
11:1
Excellent
Excellent
12V
3:1
Good
(Mid-Range)
Very Good
12V
4:1
Good (Mid-Range)
Very Good
12V
6:1
KV1905A
KV1925A
KV1935A
KV1945A
KV1965A; MPV1965
KV1975A
KV1911A-KV1991A
KV1912A-KV1932A
KV1913A-KV1993A
KV1400
KV1500
KV1600
KV1700
KV1800
Good
Very Good
(Mid-Range)
12V
13:1
Good
(Mid-Range)
Good
15
Tuning Varactors
Varactor Diode Selector Guide
Material
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
Silicon
GaAs
GaAs
GaAs
Freq. Band
Super
Hyper
Vb=12V
P/N
Series
High "S"
Linear
Vb=22V
P/N
Low "S"
Linear
Vb=22V
P/N
Hyper
Vb=22V P/N
Series
Abrupt
Vb=30V
Chip
Ceramic
Glass*
Abrupt
Vb=30V
EPSM
Abrupt
Vb=30V
SOT-23
Hyper
Chips**
VB=22V
Low
Gamma
Hyper
Chips**
VB=22V
Medium
Gamma
Hyper
Chips**
VB=22V
High
Gamma
MV32001
MV32002
MV32003
MV32004
MV32005
MV32006
MV32007
MV32008
MV32009
MV32010
MV30011
MV30012
MV30013
MV30014
MV30015
MV30016
MV30017
MV30018
MV30019
MV30020
MV31011
MV31012
MV31013
MV31014
MV31015
MV31016
MV31017
MV31018
MV31019
MV31020
MV31021
Microwave
to 40 GHz
Microwave
to 18 GHz
16
KV199x
KV198x
KV197x
KV196x
KV194x
KV193x
GC15006
GC15007
GC15008
GC15009
GC15010
GMV5007
GC15001
GC15002
GC15003
GC15004
GC15005
UHF
to 1.0 GHz
KV192x
KV195x
KV191x
GC15011
GC15012
GC15013
GC15014
GC15015
GC15016
VHF
to 250 MHz
KV1401
KV1501
N/A
N/A
HF
1 - 50 MHz
KV1601
KV1701
KV1801
N/A
N/A
MPV2100
KV211x
KV212x
KV213x
KV214x
KV215x
KV216x
GMV2114
GMV2134
GMV2154
KV2101
KV3201
KV3901
KV2801
KV2001
KV2201
KV2301
KV2401
KV2501
KV2601
KV2701
GC1500A
GC1500B
GC1500
GC1501
GC1502
GC1503
GC1504
GC1505
GC1506
GC1507
GMV1542
GC1508
GC1509
GC1510
GC1511
GC1512
GC1513
1N5441
1N5476
thru
N/A
GC1300
GC1301
GC1302
GC1303
GC1304
GC1305
GC1306
GC1307
GC1308
GC1309
GC1310
N/A
N/A
N/A
MV31022
MV31023
GC1202
GC1203
GC1204
GC1205
GC1206
GC1207
GC1208
GC1209
GC1210
GC1211
GC1212
GC1213
GC1214
GC1215
GC1216
GC1217
N/A
MV31024
MV31025
MV31026
GaAs
GaAs
GaAs
GaAs
Hyper
Hyper Flip
Chips**
Chip
VB=15V
Vb=18V
Very High Medium
Gamma
Gamma
Abrupt
Chips**
Vb=15V
Abrupt
Chips**
Vb=30V
MV34001
MV34002
MV34003
MV34004
MV34005
MV34006
MV34007
MV34008
MV34009
MV34010
MV20001
MV20002
MV20003
MV20004
MV20005
MV20006
MV20007
MV20008
MV20009
MV20010
MV21001
MV21002
MV21003
MV21004
MV21005
MV20116
MV21007
MV21008
MV21009
MV21010
MV39001
MV39002
MV39003
MMSM Varactor Diodes
Monolithic Microwave
Surface Mount (MMSM)
Varactor Diodes
This series of surface mount PIN diodes utilize new and unique monolithic
MMSM technology. The technology is a package/device integration
accomplished at the wafer fabrication level. Since the cathode and anode
interconnections utilize precision photolithographic techniques rather than
wire bonds, parasitic package inductance is tightly controlled. The package
parasitics provide smooth non-resonant functionality through 12GHz.
Key Features:
Applications/Benefits
•
•
•
•
•
• 2.4 GHz PCS • 5.7 GHz Wireless LANS
• VCO’s (Voltage Controlled Oscillator)
• Tunable Filter
• Widest bandwidth of any commercial
surface mounted devices
• Ultra tight parametric distribution
Tape and Reeled for Automatic Assembly
Low Series Inductance (<0.2nH typical)
Low Parasitic Capacitance (0.06 pf typical)
Meets All Commercial Qualification Requirements
0204 Outline
Electrical Specifications at TA = 25˚C
Electrical Specifications: TA 25°C
PART
NUMBER
MPV1965
PART
NUMBER
MPV2100
TOTAL
CAPACITANCE
Vb@10uA
CT @ -1.0V
(Min) (V)
(Min - Max)
(pF)
15
2.6-3.8
RATIO
CT 1V/CT 3V
RATIO
CT 1V/CT 6V
Q
(4V/50MHz)
(Min)
Outline
Dwg
Number
Application
1.4-2.2
2.6-3.6
1500
206
Low Voltage VCO
Outline
Dwg
Number
Application
206
Wide Bandwidth VCO
TOTAL
TOTAL
TOTAL
CAPACITANCE
Q
CAPACITANCE
Vb@10uA CAPACITANCE
CT @ -4.0V
(4V/50MHz)
CT @ 0V
CT @ -20V
(Min) (V)
(Min)
(Min - Max)
(Typ) (pF)
(Min - Max) (pF)
(pF)
22
3.25
0.9-1.5
0.2-0.5
1500
17
GaAs Varactor Diodes
Microsemi’s GaAs varactors are available as Abrupt Junction and Hyperabrupt
Junction. Our computer controlled epitaxy provide the optimal C-V
characteristics for your application. GaAs varactors feature extremely high Q
and lowest phase noise for critical applications/
Electrical Specifications: TA 25°C
15 Volt Abrupt Junction Varactors, Gamma = 0.6
TOTAL
Vb@10
RATIO
CAPACITANCE
uA
Q (4V/50MHz)
CT 0V/CT
PART NUMBER
CT @ -4.0V
(Min)
(Min)
VBR
(V)
(+ /- 10%) (pF)
MV20001
MV20002
MV20003
MV20004
MV20005
MV20006
MV20007
MV20008
MV20009
MV20010
0.3
0.4
0.5
0.6
0.8
1
1.2
1.5
1.8
2.2
2.4
2.6
2.8
2.9
3
3.1
3.2
3.3
3.4
3.4
15
15
15
15
15
15
15
15
15
15
8000
7500
7000
6500
6000
5700
5000
5000
5000
4000
30 Volt Abrupt Junction Varactors, Gamma = 0.6
PART
NUMBER
MV21001
MV21002
MV21003
MV21004
MV21005
MV21006
MV21007
MV21008
MV21009
MV21010
RATIO Vb@10
TOTAL
CT
CAPACITANCE
uA
0V/CT
CT @ -4.0V
(Min)
(V)
VBR
(+ /- 10%) (pF)
0.3
0.4
0.5
0.6
0.8
1
1.2
1.5
1.8
2.2
2.8
3.1
3.4
3.6
3.8
4
4.2
4.3
4.5
4.6
30
30
30
30
30
30
30
30
30
30
Q (4V/50MHz)
(Min)
8000
7500
7000
6500
6000
5700
5000
5000
5000
4000
Electrical
Specifications:
Electrical Specifications
at TTAA=25°C
25˚C
15 Volt Hyperabrupt Varactors - Gamma = 1.00
TOTAL
Vb@10
RATIO
CAPACITANCE
uA
Q (4V/50MHz)
CT 2V/CT
PART NUMBER
CT @ -4.0V
(Min)
(Min)
12V
(V)
(+ /- 10%) (pF)
MV30001
MV30002
MV30003
MV30004
MV30005
MV30006
MV30007
MV30008
MV30009
MV30010
0.6
1
1.2
1.5
1.8
2.2
2.5
3
3.6
4.5
2.5
3.1
3.2
3.4
3.5
3.6
3.7
3.8
3.8
3.9
15
15
15
15
15
15
15
15
15
15
4000
3000
3000
3000
3000
3000
2500
2500
2000
1500
22 Volt Hyperabrupt Varactors - Gamma = 1.00
PART
NUMBER
MV30011
MV30012
MV30013
MV30014
MV30015
MV30016
MV30017
MV30018
MV30019
MV30020
RATIO Vb@10
TOTAL
CT
CAPACITANCE
uA
CT @ -4.0V
(Min)
2V/CT
(V)
(+ /- 10%) (pF)
12V
0.6
1
1.2
1.5
1.8
2.2
2.5
3
3.6
4.5
3.1
4.1
4.3
4.8
5
5.3
5.5
5.7
5.9
6.1
22
22
22
22
22
22
22
22
22
22
Q (4V/50MHz)
(Min)
4000
3000
3000
3000
3000
3000
2500
2500
2000
1500
Electrical Specifications: TA 25°C
15 Volt Hyperabrupt Varactors - Gamma = 1.25
TOTAL
Vb@10
RATIO
CAPACITANCE
uA
Q (4V/50MHz)
CT 2V/CT
PART NUMBER
CT @ -4.0V
(Min)
(Min)
12V
(V)
(+ /- 10%) (pF)
MV31001
MV31002
MV31003
MV31004
MV31005
MV31006
MV31007
MV31008
MV31009
MV31010
0.6
1
1.2
1.5
1.8
2.2
2.5
3
3.6
4.5
3
3.7
3.9
4.2
4.4
4.6
4.7
4.8
4.9
5
15
15
15
15
15
15
15
15
15
15
4000
3000
3000
3000
3000
3000
2000
2000
2000
1500
22 Volt Hyperabrupt Varactors - Gamma = 1.25
PART
NUMBER
MV31011
MV31012
MV31013
MV31014
MV31015
MV31016
MV31017
MV31018
MV31019
MV31020
RATIO Vb@10
TOTAL
CT
CAPACITANCE
uA
CT @ -4.0V
(Min)
2V/CT
(V)
(+ /- 10%) (pF)
12V
0.5
0.7
1
1.2
1.5
1.8
2
2.2
2.7
3.3
3.2
4
5
5.4
6
6.4
6.6
6.8
7.2
7.6
22
22
22
22
22
22
22
22
22
22
Q (4V/50MHz)
(Min)
4000
4000
3000
3000
3000
3000
3000
3000
2000
2000
Additional Gamma and Capacitance values are available. Consult the factory or www.microsemi.com.
18
Gunn Diodes
MG1001 - MG1060 Cathode Heat Sink
•
•
•
•
5.9-95GHz, CW designs to 500mW and pulsed designs to 10W
High reliability, low phase noise, and low 1/f noise
Transmitters and receivers, beacons, radars, radiometers, and instrumentation
Motion detectors and automotive collision avoidance
Discrete Frequency: Cathode Ground (CW EPI-Down)
Minimum
Power
(mW)
C
(5.4-6.9)
GHz
X
(8.0-12.4)
GHz
Ku
(12.4-18.0)
GHz
K
(18.0-26.5)
GHz
Ka
(18-26.5)
GHz
U
(40.0-60.0)
GHz
10
V
(60.5-85)
GHz
MG1036-M16
VOP = 4.5V @
IOP = 900mA
W
(85.0-95.0)
GHz
MG1024-M16
VOP = 4.5V @
IOP = 1100mA
MG1025-16
VOP = 4.5V @
IOP = 1000mA
20
50
MG1001-M11
VOP = 12V @
IOP = 400mA
MG1005-M11
VOP = 10V @
IOP = 400mA
MG1009-M11
VOP = 8V @
IOP = 500mA
MG1013-M16/83B
VOP = 6V @
IOP = 600mA
MG1017-M16
VOP = 4.5V @
IOP = 700mA
MG1021-M16
VOP = 4V @
IOP = 800mA
100
MG1002-M11
VOP = 12V @
IOP = 600mA
MG1006-M11
VOP = 10V @
IOP = 700mA
MG1010-M11
VOP = 8V @
IOP = 800mA
MG1014-M16/83B
VOP = 6V @
IOP = 1000mA
MG1018-M16
VOP = 4.5V @
IOP = 1100mA
MG1022-M16
VOP = 4V @
IOP = 1200mA
MG1037-M16
VOP = 5V @
IOP = 1100mA
MG1038-M16
VOP = 5V @
IOP = 1200mA
MG1023-M16
VOP = 4V @
IOP = 1600mA
150
(40-50 GHz)
MG1015-M16/83B
VOP = 6V @
IOP = 1400mA
200
250
MG1003-42
VOP = 12V @
IOP = 1100mA
MG1007-42
VOP = 10V @
IOP = 1200mA
MG1011-42
VOP = 8V @
IOP = 1200mA
MG1019-M16
VOP = 5V @
IOP = 1400mA
MG1020-M16
VOP = 5.5V @
IOP = 1600mA
MG1039-M16
VOP = 5.5V @
IOP = 1700mA
300
(26.5-35 GHz)
MG1040-M16
VOP = 5.5V @
IOP = 1800mA
350
(26.5-35 GHz)
MG1016-83B
VOP = 6V @
IOP = 1700mA
400
(18.0-23 GHz)
500
MG1004-42
VOP = 12V @
IOP = 1300mA
MG1008-42
VOP = 10V @
IOP = 1600mA
5W Pulsed
High Power
(9.3GHz)
MG1034-42
VOP = 35V @
IOP = 8A
10W Pulsed
Stacked
(9.3GHz)
MG1060-42
VOP = 70V @
IOP = 6A
MG1012-42
VOP = 8V @
IOP = 1700mA
Polarity: Anode is the cap and Cathode is the heat-sink
MG1041-MG1058 Anode Heat Sink
•
•
•
•
9.5-25Ghz, pulsed and CW designs to 30mW
High reliability, ultra low phase noise, and low 1/f noise
Transmitters and receivers, beacons, radars, radiometers, and instrumentation
Motion detectors and automotive collision avoidance
Discrete
Discrete
Frequency:
Frequency:
Anode
Anode
Ground
Ground
(CW
(CW
EPI-Up)
EPI-Up)
Minimum
Minimum
5 5
X X
10 10
MG1052-30
MG1052-30
VOPV=
= 8V
@ @
OP8V
IOP I=
= 140mA
OP140mA
MG1056-30
MG1056-30
VOPV=
= 8V
@ @
OP8V
IOP I=
= 200mA
OP200mA
20 20
K K
MG1054-30
MG1054-30
VOPV=
= 5V
@ @
OP5V
IOP I=
= 200mA
OP200mA
MG1058-30
MG1058-30
VOPV=
= 5V
@ @
OP5V
IOP I=
= 300mA
OP300mA
Polarity:
Polarity:
cathode
cathode
is the
is the
cap cap
andand
anode
anode
is the
is the
heat-sink
heat-sink
Discrete
Discrete
Frequency:
Frequency:
Anode
Anode
Ground
Ground
(Pulsed
(Pulsed
EPI-Up)
EPI-Up)
Minimum
Minimum
5 5
X X
10 10
MG1041-30
MG1041-30
VOPV=
= 9V
@ @
OP9V
IOP I=
= 110mA
OP110mA
MG1042-30
MG1042-30
VOPV=
= 9V
@ @
OP9V
IOP I=
= 140mA
OP140mA
MG1043-30
MG1043-30
= 10V
@ @
VOPV=
OP10V
= 180mA
IOP I=
OP180mA
20 20
30 30
K K
MG1044-130
MG1044-130
VOPV=
= 8V
@ @
OP8V
IOP I=
= 120mA
OP120mA
MG1045-30
MG1045-30
VOPV=
= 8V
@ @
OP8V
IOP I=
= 150mA
OP150mA
MG1046-30
MG1046-30
VOPV=
= 8V
@ @
OP8V
IOP I=
= 200mA
OP200mA
Operation
Operation
overover
a narrow
a narrow
band
band
around
around
a specific
a specific
center
center
frequency.
frequency.
Polarity:
Polarity:
cathode
cathode
is the
is the
cap cap
andand
anode
anode
is the
is the
heat-sink
heat-sink
Other
frequencies
available
upon
request.
CallCall
factory.
Other
frequencies
available
upon
request.
factory.
Pulse
width
= 1=
usec,
Duty
factor
= 1%
typ.typ.
Pulse
width
1 usec,
Duty
factor
= 1%
Operating
Operating
voltage
voltage
(VOP(V
) typ.
Operating
Operating
current
current
(IOP)(Imax.
OP) typ.
OP) max.
Alternative
Alternative
pulse
pulse
width
width
andand
dutyduty
factors
factors
can can
be specified
be specified
by customer
by customer
Note: Operation over a narrow band around a
specific center frequency. Other frequencies
available upon request. Call factory.
Operating voltage (VOP) typ. Operating current
(IOP) max. Power measured with diode inserted in
critically coupled cavity.
Specifications @ 25°C.Specifications subject to
change without notice.
19
Comb Generators
Input
Model Number
Module
Coaxial
GG770140-01
GG770340-01
GG770140-02
GG770340-02
GG770140-03
GG770340-03
GG770140-04
GG770340-04
GG770140-05
GG770340-05
GG770140-06
GG770340-06
GG770140-07
GG770340-07
Frequency
(MHz)
100
200
250
500
1000
1500
2000
Output level
Up to 4.0
(GHz)
-10
-5
-5
0
5
5
5
4.0 to 8.0
(GHz)
-20
-20
-15
-10
-5
0
0
8.0 to 12.0
(GHz)
-20
-20
-15
-10
-5
12.0 to 18.0
(GHz)
-15
-10
-10
Notes:
1. Minimum output power per line (dBm)
2. All specifications apply at 25°C with 0.5W incident RF power in a 50 ohm system (both source & load)
3. Performance above 12.0GHz is typical performance only.
4. Modular units require an external DC return at the output. Internal or RF decoupled DC returns
are available on special order.
5. VSWR is specified at 2.0:1 max (for all model numbers).
6. Modular package style is 210003; Coaxial package style is 210020
Surface Mount Limiter
Model
GG77015-01
Freq
Range
(MHz)
10 – 3000
INSERTION
CW
Power
PCW (W)
4
Peak
Power1
PP(W)
20
Ins. Loss2
IL(dB)
Typ.
0.5
VSWR2
Typ.
1.5:1
Flat Leakage3 (dBm) Typ.
1.01.51.85<= 1GHz
1.5GHz 1.85GHz 3.5GHz
15
18
20
23
FLAT LEAKAGE
INSERTION LOSS
Notes:
1. Pulse Width = 1usec, Duty Cycle = 0.001
2. P = -10dBm max
3. P = +30dBm, Pulse Width = 1usec, Duty Cycle = 0.001
4. RF Power Handling is linearly derated from full power at +25°C to zero power at +150°C
20
FLAT LEAKAGE
PIN Diode Limiter Assemblies
Standard Broadband
Modules
STANDARD Limiter
BROADBAND
LIMITER MODULES
Frequency
Range (GHz)
0.5 to 4.0
2.0 to 8.0
4.0 to 12.0
8.0 to 18.0
2.0 to 18.0
Insertion
Loss
(dB max)
0.5
0.7
0.7
0.8
0.6
0.7
0.7
1.2
1
1
1.6
1.9
1.9
2.2
2
2
2.2
VSWR
(max)
Survival
Peak
1.5:1
1.5:1
1.5:1
1.5:1
1.7:1
1.7:1
1.7:1
1.7:1
1.8:1
1.8:1
1.8:1
1.9:1
1.9:1
2.0:1
2.0:1
2.0:1
2.0:1
100
200
200
1000
100
200
200
1000
200
200
800
200
200
600
200
200
600
Power
(Watts)
CW
3
3
3
5
2
2
2
3
2
2
3
2
2
3
2
2
3
Flat
Leakage
(mW Max)
400
200
125
200
500
125
100
200
100
60
200
100
60
200
125
100
200
Model
Number
Package
Style
GG77012-01
GG77010-01
GG77011-01
GG77013-01
GG77012-02
GG77010-02
GG77011-02
GG77013-02
GG77010-03
GG77011-03
GG77013-03
GG77010-04
GG77011-04
GG77013-04
GG77010-05
GG77011-05
GG77013-05
210013
210001
210003
210003
210013
210001
210003
210003
210001
210003
210003
210001
210003
210003
210001
210003
210003
Notes:
All low level parameters specified
at -10 dBm input power
All limiter modules require an
external DC return of 1.0 ohm
or less except the GG77014-XX
Low Leakage
Limiter Modules
LOWBroadband
LEAKAGE BROADBAND
LIMITER MODULES
2.0 to 8.0
4.0 to 12.4
8.0 to 18.0
1.4
1.9
2.2
1.8:1
2.0:1
2.0:1
10
10
10
1
1
1
20
20
35
GG77014-01
GG77014-02
GG77014-03
series, which requires external
210003
210003
210003
DC blocks at both ends.
Model numbers GG77314XX incorporate DC blocking
capacitors and do not require
either ground return or external
StandardSTANDARD
Broadband
Connectorized
Limiters LIMITERS
BROADBAND
CONNECTORIZED
Frequency
Range (GHz)
0.5 to 4.0
2.0 to 8.0
4.0 to 12.0
8.0 to 18.0
2.0 to 18.0
Insertion
Loss
(dB max)
0.6
0.7
0.9
1
1
1.5
1.5
1.5
2.1
2.2
2.5
2.5
2.2
2.5
2.5
VSWR
(max)
Survival
Peak
1.5:1
1.5:1
1.5:1
1.7:1
1.7:1
1.7:1
1.8:1
1.8:1
1.8:1
1.9:1
1.9:1
2.0:1
2.0:1
2.0:1
2.0:1
200
200
1000
200
200
1000
200
200
800
200
200
600
200
200
600
Power
(Watts)
CW
3
3
5
2
2
3
2
2
3
2
2
3
2
2
3
Flat
Leakage
(mW Max)
200
100
200
125
100
200
100
60
200
100
60
200
125
100
200
DC blocks
Model
Number
Package
Style
GG77310-01
GG77311-01
GG77313-01
GG77310-02
GG77311-02
GG77313-02
GG77310-03
GG77311-03
GG77313-03
GG77310-04
GG77311-04
GG77313-04
GG77310-05
GG77311-05
GG77313-05
210019
210019
210019
210019
210019
210019
210019
210019
210019
210019
210019
210019
210019
210019
210019
1.4
2
2.5
1.4
2
2.5
1.8:1
2.0:1
2.0:1
1.8:1
2.0:1
2.0:1
10
10
10
10
10
10
1
1
1
1
1
1
20
20
35
20
20
35
GG77314-04
GG77314-05
GG77314-06
GG77314-07
GG77314-08
GG77314-09
µsec pulse width and 0.001 duty
cycle
Spike leakage is 0.2 ergs (max)
based on the assumption that
the pulse rise time of the high
power pulse is greater than 20.0
nsec. Spike leakage for the low
frequency limiters is specified at
0.1 ergs (max)
Recovery time (3 dB) for all units
expect for the GG77014-XX,
GG77314-XX and GG77315XX series is 250nSec @ 100W
pulsed input power. Series
GG77314-XX and GG77014-
Low LeakageLOW
Connectorized
Limiters
LEAKAGE CONNECTORIZED
LIMITERS
2.0 to 8.0
4.0 to 12.4
8.0 to 18.0
2.0 to 8.0
4.0 to 12.4
8.0 to 18.0
Peak power ratings apply @ 1.0
XX recovers in 500nSec at
210019
210019
210019
210032
210032
210032
rated pulsed power and
series GG77315-XX recovers
in 1.0µSec at rated pulsed
power
Limiting threshold (1 dB
compression point) is 5mW (min)
except for the GG77014-XX and
Low Frequency
Connectorized
Limiters
LOW FREQUENCY
CONNECTORIZED
LIMITERS
0.01 to 0.1
0.1 to 0.5
0.5 to 1.0
0.01 to 0.1
0.1 to 0.5
0.5 to 1.0
0.7
0.7
1
0.7
0.7
1
1.5:1
1.5:1
1.5:1
1.5:1
1.5:1
1.5:1
100
100
100
100
100
100
1
1
1
1
1
1
200
200
200
200
200
200
GG77315-01
GG77315-02
GG77315-03
GG77315-04
GG77315-05
GG77315-06
210019
210019
210019
210093
210093
210093
GG77314-XX series which is
1.0mW (min)
Leakage levels are specified at
rated peak power
21
SP5T
Switches
SP6T
ABSORPTIVE SWITCHES
Absorptive
Switches
SPST
SP2T
SP3T
SP4T
SP5T
SP6T
Model Number
Frequency
Range
GG71420-01
GG71420-02
GG71420-03
GG71420-04
GG71420-05
GG72420-01
GG72420-02
GG72420-03
GG72420-04
GG72420-05
GG73420-01
GG73420-02
GG73420-03
GG73420-04
GG73420-05
GG74420-01
GG74420-02
GG74420-03
GG74420-04
GG74420-05
GG75420-01
GG75420-02
GG75420-03
GG75420-04
GG75420-05
GG75425-01
GG75425-02
GG75425-03
GG75425-04
GG75425-05
0.5 – 4.0
2.0 – 8.0
4.0 – 12.4
8.0 – 18.0
2.0 – 18.0
0.5 – 4.0
2.0 – 8.0
4.0 – 12.4
8.0 – 18.0
2.0 – 18.0
0.5 – 4.0
2.0 – 8.0
4.0 – 12.4
8.0 – 18.0
2.0 – 18.0
0.5 – 4.0
2.0 – 8.0
4.0 – 12.4
8.0 – 18.0
2.0 – 18.0
0.5 – 4.0
2.0 – 8.0
4.0 – 12.4
8.0 – 18.0
2.0 – 18.0
0.5 – 4.0
2.0 – 8.0
4.0 – 12.4
8.0 – 18.0
2.0 – 18.0
Insertion
Loss
(dB max)
1.7
2.1
2.4
2.9
2.9
1.7
2.1
2.4
2.9
2.9
1.7
2.2
2.5
3
3
1.8
2.3
2.7
3.2
3.2
1.6
2.1
2.6
3.2
3.2
1.8
2.2
2.9
3.6
3.6
Isolation
VSWR
(dB min)
55
50
45
45
45
60
55
50
45
45
60
55
50
45
45
60
55
50
45
45
45
40
40
35
35
45
40
40
35
35
(max)
1.5:1
1.7:1
1.8:1
1.9:1
2.0:1
1.5:1
1.7:1
1.8:1
1.9:1
2.0:1
1.5:1
1.7:1
1.8:1
1.9:1
2.0:1
1.5:1
1.7:1
1.8:1
1.9:1
2.0:1
1.5:1
1.7:1
1.8:1
1.9:1
2.0:1
1.5:1
1.7:1
1.8:1
1.9:1
2.0:1
Outline
210059
210059
210059
210059
SPST
210059
210047
210047
210047
210047
210047
SP2T
210079
210079
210079
210079
210079
SP3T
210049
210049
210049
210049
210049
SP4T
210050
210050
210050
210050
210050
SP5T
210051
210051
210051
210051
210051
Reflective Switches
SPST
SP2T
SP3T
SP4T
SP5T
SP6T
22
SP6T
Notes:
1. Required D.C. Bias:
+5V and -8 to SWITCHES
-15V
REFLECTIVE
2. Switching Speed: 1usec maximum (50% TTL to 10/90% RF)
3. Only the switched arms are
matched in the isolated state
Insertion
Isolation
VSWR
Frequency
Outline
Model
Number
Loss only when one path is in the loss
4. The
common arm, J1, is matched
state
Range
(dB
max)
(dB
min)
(max)
5. DC blocks incorporated on all RF ports
GG71410-01
0.5 – 4.0
0.9
40
1.5:1
210059
GG71410-02
2.0 – 8.0
1.3
50
1.7:1
210059
GG71410-03
4.0 – 12.4
1.5
60
1.8:1
210059
GG71410-04
8.0 – 18.0
1.7
55
1.9:1
210059
GG71410-05
2.0 – 18.0
1.8
45
2.0:1
210059
GG72430-01
0.5 – 4.0
1
60
1.5:1
210047
GG72430-02
2.0 – 8.0
1.6
60
1.7:1
210047
GG72430-03
4.0 – 12.4
2.2
60
1.8:1
210047
GG72430-04
8.0 – 18.0
2.5
55
1.9:1
210047
GG72430-05
2.0 – 18.0
2.5
55
2.0:1
210047
GG73430-01
0.5 – 4.0
1.1
60
1.5:1
210079
GG73430-02
2.0 – 8.0
1.8
60
1.7:1
210079
GG73430-03
4.0 – 12.4
2.4
60
1.8:1
210079
GG73430-04
8.0 – 18.0
2.7
55
1.9:1
210079
GG73430-05
2.0 – 18.0
2.7
55
2.0:1
210079
GG74430-01
0.5 – 4.0
1.2
60
1.5:1
210049
GG74430-02
2.0 – 8.0
1.9
60
1.7:1
210049
GG74430-03
4.0 – 12.4
2.4
60
1.8:1
210049
GG74430-04
8.0 – 18.0
2.9
55
1.9:1
210049
GG74430-05
2.0 – 18.0
2.9
55
2.0:1
210049
GG75430-01
0.5 – 4.0
1.3
60
1.5:1
210050
GG75430-02
2.0 – 8.0
2.1
55
1.7:1
210050
GG75430-03
4.0 – 12.4
2.6
50
1.8:1
210050
GG75430-04
8.0 – 18.0
3.3
45
1.9:1
210050
GG75430-05
2.0 – 18.0
3.3
45
2.0:1
210050
GG75435-01
0.5 – 4.0
1.5
60
1.5:1
210051
GG75435-02
2.0 – 8.0
2.3
60
1.7:1
210051
GG75435-03
4.0 – 12.4
2.8
60
1.8:1
210051
GG75435-04
8.0 – 18.0
3.6
55
1.9:1
210051
GG75435-05
2.0 – 18.0
3.6
55
2.0:1
210051
Notes:
1. Required D.C. Bias: +5V and -8 to -15V
2. Switching Speed: 50nsec maximum (50% TTL to 10/90% RF)
3. DC blocks incorporated on all RF ports
GG74420-04
GG74420-05
GG75420-01
GG75420-02
GG75420-03
GG75420-04
GG75420-05
GG75425-01
GG75425-02
GG75425-03
GG75425-04
GG75425-05
8.0 – 18.0
2.0 – 18.0
0.5 – 4.0
2.0 – 8.0
4.0 – 12.4
8.0 – 18.0
2.0 – 18.0
0.5 – 4.0
2.0 – 8.0
4.0 – 12.4
8.0 – 18.0
2.0 – 18.0
3.2
3.2
1.6
2.1
2.6
3.2
3.2
1.8
2.2
2.9
3.6
3.6
45
45
45
40
40
35
35
45
40
40
35
35
1.9:1
2.0:1
1.5:1
1.7:1
1.8:1
1.9:1
2.0:1
1.5:1
1.7:1
1.8:1
1.9:1
2.0:1
210049
210049
210050
210050
210050
210050
210050
210051
210051
210051
210051
210051
REFLECTIVE SWITCHES
Notes:
1. Required D.C. Bias: +5V and -8 to -15V
Insertion
2. Switching
Speed: 1usec
maximumIsolation
(50% TTL toVSWR
10/90% RF)
Frequency
Outline
Model
Loss
3. Number
Only the switched
Range arms are matched in the isolated state
(dB max) (dB min)
(max)
4. The common arm, J1, is matched only when one path is in the loss state
GG71410-01
0.5 – 4.0
0.9
40
1.5:1
210059
5. DC blocks incorporated on all RF ports
GG71410-02
2.0 – 8.0
1.3
50
1.7:1
210059
GG71410-03
4.0 – 12.4
1.5
60
1.8:1
210059
GG71410-04
8.0 – 18.0
1.7
55
1.9:1
210059
GG71410-05
2.0 – 18.0
1.8
45
2.0:1
210059
GG72430-01
0.5 – 4.0
1
60
1.5:1
210047
GG72430-02
2.0 – 8.0
1.6
60
1.7:1
210047
GG72430-03
4.0 – 12.4
2.2
60
1.8:1
210047
GG72430-04
8.0 – 18.0
2.5
55
1.9:1
210047
GG72430-05
2.0 – 18.0
2.5
55
2.0:1
210047
GG73430-01
0.5 – 4.0
1.1
60
1.5:1
210079
GG73430-02
2.0 – 8.0
1.8
60
1.7:1
210079
GG73430-03
4.0 – 12.4
2.4
60
1.8:1
210079
GG73430-04
8.0 – 18.0
2.7
55
1.9:1
210079
GG73430-05
2.0 – 18.0
2.7
55
2.0:1
210079
GG74430-01
0.5 – 4.0
1.2
60
1.5:1
210049
GG74430-02
2.0 – 8.0
1.9
60
1.7:1
210049
GG74430-03
4.0 – 12.4
2.4
60
1.8:1
210049
GG74430-04
8.0 – 18.0
2.9
55
1.9:1
210049
GG74430-05
2.0 – 18.0
2.9
55
2.0:1
210049
GG75430-01
0.5 – 4.0
1.3
60
1.5:1
210050
GG75430-02
2.0 – 8.0
2.1
55
1.7:1
210050
GG75430-03
4.0 – 12.4
2.6
50
1.8:1
210050
GG75430-04
8.0 – 18.0
3.3
45
1.9:1
210050
GG75430-05
2.0 – 18.0
3.3
45
2.0:1
210050
GG75435-01
0.5 – 4.0
1.5
60
1.5:1
210051
GG75435-02
2.0 – 8.0
2.3
60
1.7:1
210051
GG75435-03
4.0 – 12.4
2.8
60
1.8:1
210051
GG75435-04
8.0 – 18.0
3.6
55
1.9:1
210051
GG75435-05
2.0 – 18.0
3.6
55
2.0:1
210051
Notes:
1. Required D.C. Bias: +5V and -8 to -15V
2. Switching Speed: 50nsec maximum (50% TTL to 10/90% RF)
3. DC blocks incorporated on all RF ports
RF, Microwave & mmWave Diode Package Styles
Microsemi Lowell offers a wide variety of package styles to meet specific design requirements.
Package selection is an important step in the design process. Designers need to be aware of parametric
trades-offs for the various package styles. Some considerations are:
•
•
•
•
•
•
•
Electrical Performance.
Thermal Requirements
Hermetic / Non Hermetic
Taped and Reeled for automatic assembly
Cost versus Performance.
RoHS compliance
Consult the factory for package selection assistance.
This catalog contains outlines for a selection of our standard package styles. However, we supply
numerous variations of these packages to suit specific application needs. Microsemi can also work
together with engineers to develop custom package solutions.
Most of our packages are supplied with a gold finish suitable for ‘Lead Free’ and Pb/Sn assembly
techniques. Some RoHS compliant packages are supplied with a Matte Tin finish.
Microsemi offers:
• Hi-Rel Hermetic Packages
• High Frequency / Broadband (Through 40 Ghz) Discrete Packages
- Chip,Beamlead & Flip Chip devices
• High Power Packages
-Stud, ASM & SM Styles
• Low Cost High Volume Packages
- SOT 23
- Gigamite (GM1)
• Broadband performance, Economically Priced “MMSM”
- Style 206
• EPSMTM (Enhance Performance Surface Mount)
- Style 150, 250 and 450 Series
• RoHS Compliant Packaging
23
Diode Packages
Packages are RoHS Compliant unless specified
Style 34
Style 79
Style 115A
Style 127A
Style 127C
Style 149
24
Diode Packages
Packages are RoHS Compliant unless specified
Style 174C
Style 206 (MMSM™)
Style 250A - 250D
Style 454
Style GM1
Style M1
25
RF & Microwave Power Transistor Products
26
Among many diverse semiconductor business units,
the Microsemi RF Integrated Solutions (RFIS) business
unit was created in 2010 to best cohesively serve
the RF, microwave, and millimeter wave products
market. Along with diode and amplifier products were
included RF and microwave power transistor products.
The Microsemi RF and microwave power transistor
products group specializes in supporting customers
in the avionics, communications, and radar markets
with full line-ups of products meeting the demanding
requirements of transmitter amplifier systems, operating
in airborne, ground based, missile, ship borne and
space environments.
The Microsemi RFIS RF and microwave power
transistor products line heritage spans more than
35 years and includes legacy CW and high pulsed
power silicon bipolar junction transistor (BJT) devices
and products originally designed by Acrian, GHz
Technology, Advanced Power Technologies, Microwave
Semiconductor Corporation, Motorola Semiconductor,
Solid State Scientific, and SGS Thompson
Microelectronics (ST). Whether an airborne IFF (Identify
Friend or Foe), ground based primary surveillance
radar, or for satellite borne communications or imaging,
in the high reliability market most RF and microwave
power amplifier transmitter systems are designed for
a product life cycle of 15 to well beyond 25 years.
Microsemi RF & microwave transistor product offerings
are unique in supporting applications throughout
the full life cycle and thereby have cultivated a long
standing relationship with major system manufacturers
worldwide. Our Santa Clara California silicon wafer
foundry and Bend Oregon silicon and silicon carbide
wafer foundries produce a very broad range of transistor
die covering the frequencies from HF through 3.5
GHz, CW and Pulsed. Our facilities are fully ISO9001
certified and supply product for commercial, defense
and space applications. Automated assembly and test
equipment assures Microsemi customers consistent
high quality products resulting in highest factory yields
achievable which is passed on to Microsemi customers
as the lowest cost of ownership. Combined with the
use of the most advanced modern equipment for
both manufacturing and test, is statistical process
control (SPC) to achieve the best continual process
improvement (CPI).
Our Mission and Goals
Our mission is to be the world leader in high power
silicon and wide band gap (WBG) RF and microwave
power transistors for avionics, communications and
radar systems. With a sustained high research and
development investment and a keen eye for accretive
acquisitions, Microsemi will continue to be the market
leader, always pushing the performance envelope by
along with the best, and most efficient power amplifier
driver transistors, continually introducing the highest
power state of the art, most rugged and reliable RF,
microwave, and millimeter wave transistor products.
Whether a die, a packaged transistor, a 50Ω input
and output plug and play transistor pallet, or a more
integrated amplifier assembly, simply: The Microsemi
goal is to provide the customer with products that meet
all specified requirements over the life of the program.
This ensures that our customers will always achieve the
optimum system performance and lowest total cost of
ownership.
27
GaN & SiC / Wide Band Gap
• VHF/UHF/L-Band SiC SIT devices deliver up to 2200W • Pulsed & CW products for primary and secondary power output under 300us pulse width and 10% duty radars & communications systems
cycle pulsing
• Wide band gap technologies allow higher voltage and • GaN on SiC transistor devices deliver greater than higher junction temperature operation: more power - 700W for L-Band pulsed avionics
less space
• For pulsed radar GaN on SiC transistor devices deliver • High Voltage GaN HEMT’s on SiC for best thermal greater than 500W at L-Band, 500W at S-Band, & dissipation
150W at C-Band
• Wide band gap GaN on SiC HEMT (high electron 2013
Short Formtransistor)
Catalog - Wide
mobility transistor) & SiC SIT (static
induction
Band Gap SiC GaN on Sic
semiconductor technologies
Pulsed Devices
Class AB
VHF 150-160 MHz
SiC SIT
Common Gate
UHF 406-450 MHz
SiC SIT
Common Gate
1030 MHz Mode-S ELM
GaN on SiC HEMT
1030/1090 MHz Mode-S ELM
GaN on SiC HEMT
Common Source
1030MHz Mode-S / TCAS / IFF
GaN on SiC HEMT
Common Source
1025-1150 MHz Air DME
GaN on SiC Class AB
Common Source
960-1215 MHz HD Data Link
GaN on SiC HEMT
Common Source
L-Band 1200-1400 MHz
GaN on SiC HEMT
Common Source
S-Band 2700-2900 MHz
GaN on SiC HEMT
Common Source
S-Band 2700-3100 MHz
GaN on SiC HEMT
Common Source
S-Band 2700-3500 MHz
GaN on SiC HEMT
Common Source
S-Band 3100-3500 MHz
GaN on SiC HEMT
Common Source
C-Band 4400-6000 MHz
GaN on SiC HEMT
Common Source
Idq
Ave1
(mA)
Pulse
Width
(μ s)
Duty
Cycle
(%)
VSWR
Load
(V)
η
Typ
(%)
9.5
125
60
500
300
10
10:1
11
55
155
270
440
5
10
10
8.5
8
8
21.5
125
125
125
125
125
65
50
50
55
55
55
75
30
100
150
125
150
1000
300
300
300
300
300
2400**
10
10
10
6
6
6.4
650
750
5
14.1
20.8
17.2
65
50
67
68
100
100
2400**
2400**
1000
17.8
17.5
50
55
100
700
12.6
19
50
60
20
100
300
300
600
650
20
100
280
500
550
150
150
270
270
400
500
500
20
100
110
110
200
220
450
35
100
0.4
2.5
4
6.3
8
11.2
0.4
2.5
6.3
8
12
10
8
16
12.6
28.2
36
35.5
0.5
8
8
7.5
12
16
36
2
8
17
16
17.5
16.8
18
17.6
17
16
16.7
18
16.6
11.76
12.7
12.7
13.3
11
11.4
11.5
16
11
11.4
11.7
12.2
11.4
11
12.4
11
50
50
65
50
65
50
50
50
50
60
50
50
60
50
60
65
50
65
50
50
50
60
60
50
50
60
60
20
110
120
170
200
380
100
70
1
9
9
12
16
36
9
7
13
10.87
10.8
11.5
11
10
10.45
10
50
50
60
60
50
50
60
60
Pout
Min
(W)
Pin
Max
(W)
Gain
Min
(dB)
Vdd
1250
160
100
500
1000
1500
2200
700
Case
Style
Part
Number
0.15
55KT-2
0150SC-1250M
10:1
10:1
10:1
5:1
10:1
3:1
2.5
0.3
0.15
0.15
0.15
0.25
55KT-FET
55KT-FET
55ST-FET
55ST-FET
55TW-FET
55KR
6.4
6.4
3:1
3:1
0.25
0.24
55KR
55KR
MDS-GN-650ELM
MDSGN-750ELMV*
10
1
3:1
0.12
55KR
1011GN-1000V*
100
20
6
3:1
0.21
55KR
DME-GN-700V
55
55
55
55
55
55
50
55
60
55
55
50
50
55
55
50
50
54
46
50
50
42
42
50
46
40
40
10
30
50
50
100
100
20
30
50
50
100
30
30
60
60
80
100
100
10
30
30
30
500
80
150
15
30
128
3000
128
128
128
128
300
3000
200
300
300
100
100
100
100
100
100
100
200
3000
200
200
200
200
200
300
300
10
30
10
10
10
10
10
30
20
10
10
10
10
10
10
10
10
10
10
30
10
10
10
10
10
10
10
3:1
3:1
3:1
3:1
3:1
3:1
5:1
3:1
3:1
3:1
3:1
5:1
5:1
3:1
3:1
3:1
3:1
3:1
5:1
3:1
5:1
5:1
3:1
3:1
3:1
5:1
5:1
6.56
1.07
0.3
0.44
0.2
0.23
5.39
1.1
0.57
0.16
0.24
0.92
1.1
0.38
0.6
0.24
0.18
0.2
4.59
1.02
0.93
1.1
0.6
0.47
0.19
2.4
1.1
55KR
55KR
55KR
55KR
55KR
55KR
55KR
55KR
55KR
55KR
55KR
55QP
55QP
55QP
55QP
55KR
55KR
55KR
55QP
55QP
55QP
55QP
55QP
55QP
55KR
55QP
55QP
0912GN-20V*
0912GN-100LV*
0912GN-300
0912GN-300V*
0912GN-600
0912GN-650V*
1214GN-20V*
1214GN-100LV*
1214GN-280LV*
1214GN-500
1214GN-550V*
2729GN-150V*
2729GN-150
2729GN-270V*
2729GN-270
2729GN-400
2729GN-500V*
2729GN-500
2731GN-20V*
2731GN-100LV*
2731GN-110V*
2731GN-110M
2731GN-200M
2731GN-220V*
2731GN-450V*
2735GN-35M
2735GN-100M
45
42
48
35
40
40
50
39
10
30
30
60
80
100
30
30
300
300
300
300
300
300
100
100
10
10
10
10
10
10
10
5
5:1
5:1
3:1
3:1
3:1
3:1
3:1
3:1
4.32
0.68
1.1
0.6
0.38
0.19
1
0.94
55QP
55QP
55QP
55QP
55QP
55KR
55QP
55QP
3135GN-20V*
3135GN-110V*
3135GN-120M
3135GN-170M
3135GN-200V*
3135GN-400V*
4450GN-100
5259GN-70
Microsemi supports customer specifications and develops custom
products. Please contact the factory for more information.
1 For best efficiency GaN common source class AB transistor gate
is turned off when pulse burst is not present peak & Idq=(Idq-ave)/
(duty cycle)
28
θjc
(°C/W)
0405SC-100M
0405SC-500M
0405SC-1250M
0405SC-1500M
0405SC-2200M
1011GN-700ELM
* Consult factory for final qualification information
**32us on/ 18us off pulse burst of 48 pulses; total burst
width of 2400us
Pulsed High Power Pallets
• L&S-band pulsed radar and avionics pallets
• 50Ω In / 50Ω out plug and play
• SMA connector friendly
• Copper heatsinks for excllent heat dissipation
2013 Short Form Catalog - Wide Band Gap SiC GaN on Sic
Frequency
Band
(MHz)
Si Bipolar
Class C
L-Band 1200-1400MHz
Primary Surveillance Radar
S-Band 2700-3500MHz
Primary Surveillance Radar
1200-1400
1200-1400
1200-1400
2700-2900
2700-3100
2700-3100
(V)
η
Typ
(%)
Idq
Ave1
(mA)
Pulse
Width
(μ s)
Duty
Cycle
(%)
42
50
50
36
36
38
55
52
52
45
45
45
-------
300
300
300
300
200
200
10
10
10
10
10
10
Pout
Min
(W)
Gain
Min
(dB)
Vcc/Vdd
550
700
800
300
200
230
8.5
8.5
8.6
8
8
8.5
Part
Number
1214-550P
1214-700P
1214-800P
2729-300P
2731-200P
2731-230P
Power Solutions Modules
Microsemi RFIS – TS supplies a selected
to form a high power amplifier with minimal
list of Power Solution Modules which
design cost. The PSM units are built to
consist of a pair of transistors mounted on
order and delivered within a few weeks. The
a copper heat spreader and have terminal
photos
below show at BJT as well as a GaN
Power Solutions
Modules
impedances of 50 Ohms thereby providing
version.
Microsemi
RFIS
–
TS
supplies
a
selected
list
of
Power
Solution
Modules
which
consist of a pair of transistors mounted on a copper heat spreader
the user with a compact – ready to use
and have terminal impedances of 50 Ohms thereby providing the user with a compact – ready to use ( Plug and Play) unit that can be combined to
form a high
power
amplifier
with
minimal
The PSM units are built to order and delivered within a few weeks. The photos below show at
(Plug
and
Play)
unit
thatdesign
can cost.
be combined
BJT as well as a GaN version.
5/28/2013
1
Joe RFIS Diode-Transistor SFC May 2013 MASTER May 17.xls
1214-550P ATC Long Range Radar
1214-700P ATC Long Range Radar
1214-800P ATC Long Range Radar
1215 - 1400 MHz
1215 - 1400 MHz
1215 - 1400 MHz
SiBJT
SiBJT
SiBJT
Pout
W
550 W
700
800
2729-300P ATC Airport Surveillance
2700 - 2900 MHz
SiBJT
300
8.0
36
45
300
10
2700 - 3100 MHz
SiBJT
200
8.0
36
45
200
10
2700-3100 MHz
SiBJT
230
8.5
38
45
200
10
Model
Application
ATC Airport Surveillance
2731-200P Dual Band
ATC Airport Surveillance
2731-230P
Dual Band
Frequency Band
Technology
Pgain
dB
8.5 dB
8.5
8.6
Vcc/Vdd
Volts
42
50
50
Eff
%
55
52
52
PW
us
300
300
300
DF
%
10
10
10
29
Pulsed Primary Radar
Pulsed
Primary
Radar
• Pulsed radar products for system operating bands:
- VHF 150-160MHz
- UHF 406-450MHz
- P-Band 890-1000MHz
- L-Band 1.2-1.4GHz & 1480-1650MHz
- S-Band 2.7-3.5GHz
- C-Band 4.4-5.0GHz & 5.2-6.0GHz
• Characterized to meet the system signal format on parameters such as: rise and fall time, pulse droop, gain spread short pulse, long pulse and combinations, gain change vs. frequency and temperature, and power saturation
•Wide band gap GaN on SiC HEMT (high electron mobility transistor) & SiC SIT (static induction transistor) semiconductor technologies2
•Si bipolar traditional high reliability technology
transistor devices and products
Notes to Pulsed Radar Table:
Microsemi supports customer specifications and develops custom products.
Please contact the factory for more information.
1 For best efficiency GaN common source class AB transistor gate is turned off when pulse burst is not present peak & Idq=(Idq-ave)/(duty cycle)
2 For UHF through C-Band pulsed radar transistors: 1st two digits are low frequency band start and 2nd two digits are band end in 100’s of MHz
30
3 GN=GaN & SC=SiC in part number
Pulsed Primary Radar
Idq
1
Ave
(mA)
500
Pulse
Width
(μ s)
300
Duty
Cycle
(%)
10
VSWR
Load
(V)
125
η
Typ
(%)
60
9.6
9.7
40
40
50
50
---
250
250
11
55
155
270
440
9.5
23
33
0.35
1.2
2.5
6
5.3
12.3
20
27
40
42.7
40
50
0.4
2.5
5.5
6.3
8
12
3.5
20.5
-11.5
16
16
23
21.7
24
10
8
12.6
16
28.2
35.5
36
0.5
8
8
7.5
12
16
36
2
8
10
10
8.5
8
8
8
8.1
9.6
7.5
7
7.3
7
7.8
6.5
8
7.1
7.4
8
8.7
8.7
17
16
17
16.7
18
16.6
8
7.3
17
7.5
8
11.7
8
8.3
8.5
11.76
12.7
13.3
12.7
11
11.5
11.4
16
11
11.4
11.7
12.2
11.4
11
12.4
11
125
125
125
125
125
40
48
50
28
28
28
28
36
28
50
36
40
50
40
50
50
50
60
50
60
50
36
40
60
36
36
36
36
38
36
50
60
60
50
65
65
50
50
50
50
60
60
50
50
60
60
50
50
55
55
55
40
40
40
45
40
40
48
45
45
55
48
50
45
55
50
50
50
55
60
55
55
40
40
48
40
40
40
35
50
50
50
50
55
55
50
54
50
46
50
50
42
42
50
46
40
40
30
125
250
125
120
---------------20
30
60
50
50
100
---------30
30
60
60
80
100
100
10
30
30
30
50
80
150
15
30
20
110
120
170
200
380
100
70
1
9
9
12
16
36
9
7
13
10.87
10.8
11.5
11
10
10.45
10
50
50
60
60
50
50
60
60
45
42
48
35
40
40
50
39
Pout
Min
(W)
Pin
Max
(W)
Gain
Min
(dB)
Vcc/Vdd
(V)
550
700
800
300
200
230
-------
8.5
8.5
8.6
8
8
8.5
42
50
50
36
36
38
Pout
Min
(W)
1250
Pin
Max
(W)
160
Gain
Min
(dB)
9.5
Vcc/Vdd
UHF 400-500 MHz
Si Bipolar Class C
Common Emitter
300
500
33
54
UHF 406-450 MHz
SiC SIT Class AB
Common Gate
100
500
1000
1500
2200
60
150
300
2
6
12
30
32
55
110
140
220
270
300
370
20
100
280
280
500
550
20
110
500
65
100
110
125
150
170
150
150
270
270
400
500
500
20
100
110
110
200
220
450
35
100
Devices
VHF 150-160 MHz
SiC SIT Class AB
Common Gate
P-Band 890-1000 MHz
Si Bipolar Class C
Common Base
L-Band 1200-1400 MHz
Si Bipolar Class C
Common Base
L-Band 1200-1400 MHz
GaN on SiC HEMT Class AB
Common Source
L-Band 1480-1650 MHz
Si Bipolar Class C
Common Base
S-Band 2700-3500 MHz
Si Bipolar Class C
Common Base
S-Band 2700-2900 MHz
GaN on SiC HEMT
Common Source Class AB
S-Band 2700-3100 MHz
GaN on SiC HEMT
Common Source Class AB
S-Band 2700-3500 MHz
GaN on SiC HEMT
Common Source Class AB
S-Band 3100-3500 MHz
GaN on SiC HEMT
Common Source Class AB
C-Band 4400-6000 MHz
GaN on SiC HEMT
Common Source Class AB
50Ω Pallets
Si Bipolar - Class C
L-Band 1200-1400MHz
Primary Surveillance Radar
S-Band 2700-2900MHz
Primary Surveillance Radar
S-Band 2700-3100MHz
Primary Surveillance Radar
θjc
Case
Style
Part
3
Number
10:1
(°C/W)
0.15
55KT-2
10
10
20:1
20:1
0.2
0.15
M106
M102
300
300
300
300
300
150
150
150
CW
CW
CW
2000
5000
2000
330
5000
150
100
150
330
300
3000
300
200
300
300
200
200
400
120
200
200
100
50
100
100
100
100
100
100
100
100
200
3000
200
200
200
200
200
300
300
10
10
10
6
6
5
5
5
100
100
100
20
20
20
10
20
10
10
10
10
10
30
10
20
10
10
10
10
10
10
10
10
10
4
10
10
10
10
10
10
10
10
10
30
10
10
10
10
10
10
10
10:1
10:1
10:1
5:1
10:1
3:1
3:1
3:1
10:1
10:1
10:1
3:1
3:1
3:1
3:1
3:1
3:1
3:1
3:1
2:1
5:1
3:1
3:1
3:1
3:1
3:1
3:1
3:1
3:1
2:1
2:1
5:1
2:1
2:1
2:1
5:1
3:1
3:1
3:1
3:1
3:1
3:1
5:1
3:1
5:1
5:1
3:1
3:1
3:1
5:1
5:1
2.5
0.3
0.15
0.15
0.15
1
0.48
0.22
14
9.0
4.5
2.0
2.3
1.0
0.65
0.55
0.25
0.22
0.29
0.29
5.39
1.1
0.35
0.57
0.16
0.24
1
0.5
0.16
0.5
0.3
1.1
0.5
0.3
0.3
0.92
1.1
0.6
0.38
0.24
0.2
0.18
4.59
1.02
0.93
1.1
0.6
0.47
0.19
2.4
1.1
55KT-FET
55KT-FET
55ST-FET
55ST-FET
55TW-FET
55AW-1
55KT-1
55KT-1
55LT
55LV
55LT
55AW-1
55AW-1
55AW-1
55KT-1
55ST-1
55ST-1
55KT-1
55ST-1
55ST-1
55KR
55KR
55KR
55KR
55KR
55KR
55LV
55AW-1
55KR
55KS-1
55KS-1
55QP-1
55KS-1
55KS-1
55KS-1
55QP
55QP
55QP
55QP
55KR
55KR
55KR
55QP
55QP
55QP
55QP
55QP
55QP
55KR
55QP
55QP
0405SC-100M
0405SC-500M
0405SC-1250M
0405SC-1500M
0405SC-2200M
0910-60M
0910-150M
0910-300M
1014-2
1014-6A
1014-12
1214-30
1214-32L
1214-55
1214-110M
1214-150L
1214-220M
1214-300
1214-300M
1214-370M
1214GN-20V*
1214GN-100LV*
1214GN-280
1214GN-280LV*
1214GN-500
1214GN-550V*
1517-20M
1517-110M
1214GN-500
3134-65M
2731-100M
2731-110M
2729-125
2931-150
2729-170
2729GN-150V*
2729GN-150
2729GN-270
2729GN-270V*
2729GN-400
2729GN-500
2729GN-500V*
2731GN-20V*
2731GN-100LV*
2731GN-110V*
2731GN-110M
2731GN-200M
2731GN-220V*
2731GN-450V*
2735GN-35M
2735GN-100M
10
30
30
60
80
100
30
30
300
300
300
300
300
300
100
100
10
10
10
10
10
10
10
5
5:1
5:1
3:1
3:1
3:1
3:1
3:1
3:1
4.32
0.68
1.1
0.6
0.38
0.19
1
0.94
55QP
55QP
55QP
55QP
55QP
55KR
55QP
55QP
3135GN-20V*
3135GN-110V*
3135GN-120M
3135GN-170M
3135GN-200V*
3135GN-400V*
4450GN-100
5259GN-70
η
Typ
(%)
Idq
Ave†
(mA)
Pulse
Width
(μ s)
Duty
Cycle
(%)
VSWR
Load
55
52
52
45
45
45
-------
300
300
300
300
200
200
10
10
10
10
10
10
-------
θjc
Size
(°C/W)
(In)
-------
-------
0150SC-1250M
MS2176
MS2200
Part
Number
1214-550P
1214-700P
1214-800P
2729-300P
2731-200P
2731-230P
31
Avionics
• Highest performance output power devices for all pulsed L-Band avionics systems
• Optimal devices for: Mode-5 IFF interrogators, Mode-S ELM transponders, TACAN, DME, Data Links, TCAS
• Characterized to meet avionics system specifications on parameters such as: rise and fall time, pulse droop, gain spread multimode pulsing combinations, gain change vs. frequency and temperature, power saturation, and spectral masks
• Wide band gap GaN on SiC HEMT (high electron
mobility transistor)2
• Si bipolar traditional high reliability technology transistor devices and products
Pin
Max
(W)
Gain
Min
(dB)
1030/1090 MHz
Transponder/Interrogator
Silicon Bipolar Class C
Common Base
150
175
400
25
25
75
7.8
8.5
7.3
(V)
50
50
50
1090 MHz Transponder
Silicon Bipolar Class A
Common Emitter
0.2
0.6
0.6
2
4
35
75
95
350
450
500
500
600
700
1000
1000
1000
0.02
0.05
0.05
0.25
0.4
5.6
13
10
70
90
150
150
150
150
208
158
100
10
10.9
10.9
9
10
8
7.6
9.7
6.9
7
5.2
5.2
6
6.7
6.8
8
10
400
63
450
800
1200
70
75
150
400
500
500
800
1100
1400
60
140
500
700
100
100
150
6.5
9
20
90
70
70
100
115
170
6
15.7
70
5
1090 MHz Transponder
Silicon Bipolar Class C
Common Base
1030 MHz Interrogator
Silicon Bipolar Class C
Common Base
1090 MHz TCAS
Silicon Bipolar Class C
Common Base
1030 MHz TCAS
Silicon Bipolar Class C
Common Base
1030/1090 MHz Mode-S
Silicon Bipolar Class C
Common Base
1030/1090 MHz MODE S-ELM
Silicon Bipolar Class C
Common Base
1030 MHz Mode-S ELM
GaN on SiC HEMT Class AB
Common Source
1030/1090 MHz Mode-S ELM
GaN on SiC HEMT Class AB
Common Source
1030 MHz Mode-S/TCAS/IFF
GaN on SiC HEMT Class AB
Common Source
32
Vcc/V
dd
Pout
Min
(W)
η
Typ
(%)
Idq Pulse
Ave1 Width
(mA) (μ s)
Duty
Cycle
(%)
VSWR
Load
θjc
Case
Style
Part
Number
(°C/W)
40
40
40
----
10
10
10
1
1
1
30:1
30:1
20:1
0.3
0.45
0.2
M138
55CX-1
55CT-1
MS2393
TPR175
TPR400
18
18
18
28
28
50
50
40
50
50
50
50
50
50
50
50
50
---35
35
30
-40
40
40
35
35
35
35
43
45
50
------------------
CW
CW
CW
10
10
10
10
10
10
10
10
10
10
10
10
1
1
---1
1
1
1
1
1
1
1
1
1
1
1
1
1
30:1
30:1
30:1
-----20:1
25:1
10:1
10:1
30:1
10:1
9:1
4:1
4:1
25
35
25
10
35
2
0.8
0.6
0.12
0.1
0.1
0.06
0.08
0.06
0.08
0.08
M115
M220
M115
M220
M115
M115
M115
M210
M218
M216
55CT-1
55KT-1
M112
55KT-1
55KV-1
55SW-1
55SW-1
MS2290
MS2203
MS2204
MS2201
MS2206
MS2341
MS2361
MSC1100
MSC1350M
MSC1450M
TPR500
TPR500A
MS2473
TPR700
TPR1000
ITC1000
ITC1100
8
50
45
--
32
2
15:1
0.17
M216
6.5
9
9
10.3
9.2
10
6.5
8.5
8.5
9
9.4
9.1
10
9.5
8.5
21.5
45
45
50
50
50
50
45
50
50
50
50
52
50
50
50
65
35
45
45
35
48
40
35
45
45
40
40
45
40
50
55
70
---------------65
32
32
32
128†
32
128†
32
32
32
128†
128†
32
2400
2400††
2400††
2400††
2
1
2
1
2
1
1
2
2
1
1
2
6.4
6.4
6.4
6.4
10:1
4:1
4:1
5:1
10:1
3:1
10:1
4:1
4:1
4:1
4:1
3:1
2:1
2:1
3:1
3:1
0.06
0.09
0.02
0.8
0.86
0.5
0.15
0.12
0.12
0.12
0.02
0.025
0.5
0.15
0.15
0.25
55KT-1
55SM-1
55TU-1
55CX-1
M214
55AW-1
55KT-1
55ST-1
55SM-1
55ST-1
55TU-1
55TU-1
55AW-1
55AW
55ST-1
55KR
6.4
3:1
0.25
55KR
6.4
3:1
0.24
55KR
2
3:1
0.12
55KR
650
5
20.8
65
65
750
14.1
17.2
50
68
100 2400††
100 2400††
1000
17.8
17.5
50
55
100
32
MS2207
TCS450
TCS800
TCS1200
MDS70
MS2228
MDS150
MDS400
10500
10502
MDS800
MDS1100
MDS1400
MDS60L
MDS140L
MDS500L
1011GN-700ELM
MDS-GN-650ELM
MDS-GN-750ELMV*
1011GN-1000V*
Avionics
960-1215 MHz DME/TACAN
Si Bipolar Class C
Common Base
1025-1150 MHz Air DME
Si Bipolar Class A CW
Common Emitter
1025-1150 MHz Air DME
Si Bipolar Class C
Common Base
1025-1150 MHz Air DME
GaN on SiC Class AB
Common Source
960-1215 MHz Data Link
Si Bipolar Class C
Common Base
960-1215 MHz TACAN
Si Bipolar Class C
Common Base
960-1215 MHz HD Data LInk
GaN on SiC HEMT Class AB
Common Source
Vcc/
Vdd
θjc
η
Typ
(%)
Idq
Ave1
(mA)
Pulse
Width
(μ s)
Duty
Cycle
(%)
VSWR
Load
25
30
45
45
--
------
10
10
10
10
CW
1
1
1
1
--
10:1
10:1
10:1
10:1
10:1
3.5
2
1.4
0.8
33
55CT-1
M105
55CT-1
55CT-1
55FW-2
0912-7
MS2321
0912-25
0912-45
1000MP
35
35
35
28
28
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
45
35
35
35
-35
-45
43
48
45
-45
--40
40
40
35
40
-40
35
-40
60
-------------------------100
20
10
10
10
10
10
-10
10
10
10
-10
10
10
10
10
10
10
10
10
10
10
10
10
20
1
1
1
1
1
1
-1
1
1
1
-1
1
1
1
1
1
1
1
1
1
1
1
1
6
10:1
20:1
20:1
20:1
20:1
10:1
-10:1
20:1
20:1
10:1
-10:1
20:1
20:1
20:1
20:1
20:1
30:1
30:1
30:1
25:1
10:1
30:1
5:1
3:1
10
10
7
5
8
2
-1
1
1
0.8
1
0.8
0.6
0.6
0.6
0.3
0.2
0.2
0.2
0.12
0.12
0.1
0.06
0.05
0.21
55FW-1
M115
55FW-1
M220
M115
55FW-1
M115
55FW-1
M220
M115
55FW-1
M115
55FW-1
M115
M105
55AY-1
M218
M218
M103
55AT-1
M112
M216
55KT-1
M112
55ST-1
55KR
1002MP
MS2202
1004MP
MS2205
SD1526-01
1015MP
MSC1015MP
1035MP
MS2553
MS2575
1075MP
MSC1075MP
1090MP
SD1536-03
SD1536-08
DME150
MSC1175M
MS2554
MS2421
DME375A
MS2441
MSC1400M
DME500
MS2472
DME800
DME-GN-700V*
28
28
36
35
36
36
35
36
35
40
50
50
50
50
50
50
50
50
50
50
50
50
65
50
65
50
45
45
40
40
40
40
40
45
45
40
40
38
38
40
38
38
45
38
40
40
55
55
55
55
55
58
--------------------10
30
50
50
100
100
6.4
10
10
6.4
10
10
6.4
7
7
20
20
10
20
20
20
10
20
10
10
10
128
3000
128
128
128
128
21
21
40
21
22
40
21
22
21
5
5
10
5
5
5
10
5
10
10
10
10
30
10
10
10
10
5:1
20:1
5:1
15:1
10:1
3:1
5:1
3:1
-10:1
30:1
-10:1
5:1
-15:1
5:1
15:1
3:1
3:1
5:1
3:1
3:1
3:1
3:1
3:1
7
3
1.8
2.2
0.8
0.8
0.75
0.5
0.57
1
0.6
0.8
0.3
0.3
0.28
0.16
0.15
0.16
0.12
0.07
6.56
1.07
0.3
0.44
0.2
0.23
M222
M222
55AT-1
M214
55AT-1
55AT-1
M218
55KT-1
M216
55LT-1
55AZ-1
M218
55AT-1
55AT-1
M214
M216
55KT-1
M216
55ST-1
55ST-1
55KR
55KR
55KR
55KR
55KR
55KR
MS2211
MS2212
JTDB25
MS2213
JTDA50
JTDB75
MS2214
JTDA150A
MS2215
TAN15
TAN75A
MS2209
TAN150
TAN250A
MS2267
MS2210
TAN300
MS2272
TAN350
TAN500
0912GN-20V*
0912GN-100LV*
0912GN-300
0912GN-300V*
0912GN-600
0912GN-650V*
Pout
Min
(W)
Pin
Max
(W)
Gain
Min
(dB)
7
15
25
45
0.6
1
1.5
3.5
7
0.05
8.5
10
8.5
8.1
10.8
(V)
50
50
50
50
18
2
2
4
4
5
15
15
35
35
35
75
75
90
90
90
150
175
250
300
375
400
400
500
550
800
700
0.3
0.25
0.5
0.5
0.55
1.5
1.5
3.5
3
3
12
13
14
13
13
25
30
60
70
85
90
90
125
150
100
12.6
10
9
9
9
9.5
10
10
10
10.6
10.7
7.8
7.6
8.1
8.4
8.4
7.8
7.6
6.2
6.3
6.4
6.5
6.5
6
5.6
9
17.4
6
15
25
30
50
75
85
145
150
15
75
90
150
250
250
300
300
350
350
500
20
100
300
300
600
650
0.7
2.3
5
5
10
15
15
25
26.7
3
12
13
30
60
40
60
60
60
70
70
0.4
2.5
4
6.3
8
11.2
9.3
8.1
7
7.8
7
7
7.5
7.6
7.5
7
8
8.4
7
6.2
8
7
7
7.6
7
9
17
16
17.5
16.8
18
17.6
Case
Style
Part
Number
(°C/W)
Microsemi supports customer specifications and develops custom products.
Please contact the factory for more information.
1 For best efficiency GaN common source class AB transistor gate is turned off
when pulse burst is not present peak & Idq=(Idq-ave)/(duty cycle)
2 “GN” in part number denotes a GaN on SiC device
† Burst of 0.5us ON/0.5us OFF x128 repeated at 6.4ms
†† Burst of 32us ON/18us OFF x 48 repeated at 24ms
*Consult factory for final qualification information
33
High Reliability Transistors
Microsemi Transistor Solutions:
Hi Rel Screening Capability and Products
Post Production Screening Tests
One hundred percent electrical screening of finished
product is performed to guarantee that products
comply with the customer supplied specification or
data sheet. One hundred percent reliability testing is
designed to remove latent failures and is also performed
on all Microsemi RF & microwave power transistor
products. These tests are designed with a “screening
by failure model” philosophy in mind. Our standard
100% processing is detailed in Table I. Standard 100%
processing complies with MIL-STD-883 and MIL-STD-750.
Application
UHF Comm
S-Band Telem
Avionics
Freq Range
Power Out (W)
100-500 MHz
50
225-400MHz
125
500-1000MHz
50
2200-2400 MHz
6
2200-2500MHz
4
2300-2400 MHz
20
1030/1090MHz
600 Pk
1030 MHz
1100 Pk
960-1215MHz
Qualification Tests
All hermetic (solder sealed) Microsemi RF & microwave
power transistor devices are capable of passing
the standard matrix of environmental testing per
MIL-STD-750. The tests stress the hermetic seal, the
lead attachment and in general assure that the devices
which pass the test matrix are inherently reliable in severe
military-type environments. The tests are outlined in
Table 2. Samples of current production, as well as samples
of any new package design, are routinely subjected to this
standard test matrix. Data exists in reliability files verifying
conformance of Microsemi transistor devices in various
packages to the environmental test sequence. This test
matrix complies with MIL-STD-750.
Application
Model
Freq Range
Class A
23003H/HS
1000-2300 MHz
0.3
23A008H/HS
1000 - 2300 MHz
0.8
UHF Radar
0405SC-1000MH
406 - 450 MHz
P-Band Radar
0709-50H
650-850 MHz
50 Pk
0709-240H
650-850 MHz
240 Pk
0709-500H
650 - 850 MHz
500 Pk
L-Band Radar
75 Pk
Power Out (W)
1000 pk
1014-6AH
1215-1400 MHz
6
1214-30H
1215-1400 MHz
30 pk
960-1215MHz
250 Pk
1214-55H
1214-1400 MHz
55 pk
960-1215MHz
350 Pk
1214-300HS
1215-1400 MHz
300 pk
2729-170H
2700-2900 MHz
170 Pk
960-1215MHz
75 pk
960-1215MHz
150 pk
S-Band Radar
Table 1
MIL-STD-750 or TS (as noted)
TEST
Notes:
1. Destructive test on line monitor of
production equipment
A) Standard Manu facturing Testing
B) Reliability Testing
C) High Reliability Screening
34
TEST METHOD
Wafer Probe -- DC
Wafer Probe Spec
SEM Wafer Inspection
MIL-STD-883
Wafer Qual
DC/RF Electrical
Level
A
B
C
JANTXV
100%
100%
100%
100%
--
--
OPT
All Wfr
All Wfr
All Wfr
-All Wfr
Die Visual
TS Specification
100%
100%
100%
100%
Die Shear
2017
Note1
Note1
Note1
Note1
Bond Strength
2037
Note1
Note1
Note1
Note1
Precap Visual
2072
AQL
100%
100%
100%
100% Electrical
TS Specification
100%
100%
100%
100%
Storage
1032
--
OPT
100%
100%
Temperature Cycling
1051 Condition D
--
OPT
100%
100%
Constant Acceleration
2006, Y1
--
OPT
100%
100%
PIND Test
2052
--
OPT
100%
100%
Gross Leak
1071.1 Condition H
100%
100%
100%
100%
Fine Leak
1071.1 Condition C
AQL
100%
100%
100%
100%
HTRB
1039 Condition A, 48 hrs
--
Burn - In
1039 Condition B
--
100%
100%
100%
100%
DC Electrical
Product Specification
100%
100%
100%
100%
RF Electrical
Product Specification
100%
100%
100%
100%
Ext Visual / Mechanical
2071
AQL
AQL
AQL
--
Final QA
TS Specification
AQL
AQL
AQL
--
Group A,B,C
Done on Request
--
--
LTPD
LTPD
High
Reliability
Transistors
Hi Rel
Screening
Table 2
MIL-STD-750
EXAMINATION OR TEST
METHOD
CONDITION
Class B LTPD
2066
Test Condition A
15
(a) Marking Permanency
2008
Test Condition B
3.2.1
4 devices ( no failures)
(b) Visual & Mechanical
2071
Test Condition B
1 device ( no failures)
(c) Bond Strength
2037
Test Condition D
15
(d) Die Shear
2017
2026
Soldering temp of
260+ 10oC
15 Leads
2036
Test Condition B2
15
Group B Tests
Subgroup 1
Physical Dimensions
Subgroup 2
Subgroup 3
Solderability
Subgroup 4
Terminal Strength
Seal
1071
(a) Fine
Condition H
(b) Gross
Condition C
Group C Tests
Subgroup 1
Thermal Shock
1011
Test Condition B
Temperature Cycling
1010
Test Condition C
Moisture Resistance
1004
Seal
1014
(a) Fine
Condition H
(b) Gross
Condition C
End Point electrical parameters
15
As Specified
Subgroup 2
Mechanical Shock
2016
Vibration Variable
2056
Constant Acceleration
2006
Seal
1071
(a) Fine
15
Condition H
(b) Gross
Condition C
End Point Electrical
parameters
As Specified
Subgroup 3
Salt Atmosphere
3 Axis
15
1041
35
HF / VHF / UHF Communications
HF Industrial/Communications
• 2-175MHz single ended or balanced transistors Si bipolar for Class AB/C operation
• 1-250W CW or Pulsed at 28V & 50V
• RF Power for FM/SSB mobile and base stations, high power amplifiers, and industrial, scientific, and medical equipment
VHF Communications
• 50-175MHz single ended or balanced transistors for
common emitter class C operation Si Bipolar
• 1-150W CW biased at 12.5V, 28V, or 50V
• AM/FM mobile and base station applications
UHF Communications
• Common emitter and common base class C single ended and balanced Si bipolar transistor
• 225-400MHz, 1.5-125W, 12.5V or 28V
• 450-512MHz, 1-45W at 12.5V
• 836-960MHz, 1-45W at 12.5V
Military Communications
• 100-500MHz, 1-125W CW, 28V, ClassA/AB/C single ended or balanced Si bipolar transistors
HF Si Bipolar Class
AB
2-30 MHz
Common Emitter
HF/VHF/UHF Si
Bipolar Class C
HF 2-50 MHz
Common Emitter
VHF 100-175 MHz
Common Emitter
36
Pout
Min
(W)
100
130
150
150
220
220
250
250
Pout
Max
(W)
7.9
8.2
6
6
13.9
11
10
10
Gain
min
(dB)
11
12
14
14
12
13
14
14
Pout
Min
(W)
20
30
75
200
250
0.75
1
1.4
1.75
2.5
3
4
10
10
10
10
15
15
20
20
Pin
Max
(W)
0.65
0.48
3.8
12
9
0.015
0.1
0.1
0.125
0.2
0.5
0.25
0.1
0.1
1
1
1
3.5
3
3
Gain
Min
(dB)
15
18
14
12
14.5
17
10
12
12
11.5
8
12
10
10
10
10
12
6.3
8.2
8.2
Vcc
(V)
12.5
28
50
50
28
50
50
50
Vcc
(V)
12.5
28
12.5
50
50
12.5
12.5
7.5
12.5
7.5
12.5
12.5
12.5
12.5
28
28
12.5
12.5
28
28
η
Typ
(%)
50
50
50
50
50
50
50
50
η
Typ
(%)
60
60
60
60
37
-50
50
50
50
50
50
--55
55
60
60
55
60
Icq
(mA)
150
150
100
100
750
150
150
150
Cob
(pF)
100
-350
300
360
4
4
6
15
19
15
20
45
45
15
15
45
10
35
35
continued next page
VSWR
Load
20:1
20:1
20:1
20:1
20:1
20:1
20:1
20:1
VSWR
Load
20:1
20:1
20:1
30:1
20:1
--20:1
-20:1
--20:1
20:1
20:1
20:1
20:1
20:1
-20:1
θjc
(°C/W)
0.6
1
0.75
0.75
0.7
0.7
0.4
0.4
θjc
(°C/W)
2.2
2.2
2.2
0.65
0.4
125
175
35
35.7
11.6
35
22
8.75
8.75
13.5
13.5
8.75
5.6
5.83
5.8
Case
Style
Part
Number
M174
M174
M174
M164
M174
M174
M177
M177
MS1051
MS1078
MS1007
MS1008
MS1076
MS1079
MS1004
MS1011
Case
Style
Part
Number
M113
M113
M174
55HX-2
M177
SO-8
TO-39
M123
TO-39
M123
TO-39
TO-39
M135
M113
M135
M113
M122
M113
M113
M135
MS1227
MS1226
MS1001
S200-50
MS1004
SRF4427
2N4427
MS1403
MRF607
MS1401
2N6255
SD1127
SD1143
SD1143-01
SD1013
SD1013-03
MS1261
SD1014-06
MS1408
MS1406
HF / VHF / UHF Communications
HF/VHF/UHF Si
Bipolar Class C
UHF 225-400 MHz
Common Emitter
UHF 100-500 MHz
Common Emitter
UHF 470 MHz
General Purpose
UHF 836-960 MHz
General Purpose
Pout
Min
(W)
30
30
30
30
30
40
40
40
40
40
60
80
100
100
100
150
3
10
10
10
25
60
70
80
100
100
100
125
50
100
2
2
3
5
5
10
10
15
15
25
1.5
45
Pin
Max
(W)
3
3
3
3
3
7
5
5
14
14
12
10
25
25
20
18
0.2
0.65
1
1
3.2
8
10
10
20
19
16
25
7
28.2
0.2
0.32
0.34
0.7
0.5
2
2.5
2.5
2.7
6
0.24
15
Gain
Min
(dB)
10
10
10
10
10
7.6
9
9
4.5
4.5
7
9
6
6
7
9.5
11.8
12
10
10
8.9
8.8
8.5
9
7
7.2
8
8.5
8.5
5.5
10
8
9.5
8.5
10
7
6
7.8
7.5
6.2
8
4.7
Vcc
(V)
13.5
12.5
12.5
28
13.5
28
13.6
13.6
12.5
12.5
28
27
28
12.5
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
-50
50
50
60
--50
--12.5
12.5
η
Typ
(%)
55
---55
60
55
-70
70
55
65
50
-60
70
60
50
60
50
50
60
50
60
60
55
55
60
55
55
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
60
--
Cob
(pF)
95
120
120
250
95
65
95
95
200
200
80
75
150
390
220
150
4.5
12
11.5
11.5
22
70
65
80
100
120
120
70
52
100
10
15
12
19
15
26
30
50
50
70
6
100
VSWR
Load
20:1
10:1
10:1
-20:1
20:1
20:1
-10:1
10:1
20:1
30:1
-10:1
30:1
20:1
30:1
-30:1
10:1
5:1
5:1
20:1
5:1
-5:1
4.5:1
-5:1
5:1
---20:1
-20:1
--20:1
20:1
-20:1
θjc
Case
Style
(°C/W)
1.2
M135
1.2
M135
1.2
M113
4.4
M135
1.2
M113
2.9
M135
1.2
M135
1.2
M113
2.2
M135
2.2
M113
2.3
M135
2
55HT-2
0.75
M174
0.65
M111
0.65
55HV-2
0.75
M174
16
55FT-2
6.4
M123
6.3
55FT-2
6.3
55FU-2
2.5
55HV-2
1.25
55HW-2
0.8
M111
0.8
55HV-2
0.7
M111
0.7
55HV-2
0.7
55JU-2
0.65
55JT-2
1.25
55JT-2
0.67
M168
35
M122
35
TO-39
35
TO-39
11.6
M122
11.6
M123
3
M122
4.7
M122
4.6
M142
4.6
M111
M111
2.5
25
Pwr Macro
1.2
M142
Part
Number
MS1504
MS1336
MS1337
SD1015
MS1505
SD1224
MS1506
MS1507
SD1018
SD1018-06
MS1329
VAM80
MS1204
MS1003
VMIL100
MS1281
UMIL3
MS1642P
UMIL10
UMIL10P
UMIL25
UMIL60
MS1511
UMIL80
MS1503
UMIL100
UMIL100A
0204-125
0105-50
MS1509
MS1402
SD1444
MS1649
MS1404
MS652S
MS1426
SD1146
MS1263
SD1429-03
SD1422
MRF557
MS1455
37
General Purpose & Small Signal
Small Signal
• Thru-hole metal cans, plastic Macro, SO-8, SOT-23 and SOT-143 • Transistors for common emitter class A operation up to 1 GHz
packages
• Device gain >10dB with NF<2.5dB at 5, 7.5, 10, 12, and 15VDC
• Applications include: PA stage for hand-held radios & low power • Applications include: gain blocks, low noise amplifiers, and amplifier driver stage
oscillators
Freq
(MHz)
100
200
200
250
250
300
300
400
500
500
500
500
500
500
500
1000
1000
Small Signal
Up to 1 GHz
Si Bipolar Class A
Common Emitter
Freq
(MHz)
1500
1200
1400
1400
1500
3000
3000
1200
1300
1400
1600
4500
4500
5000
5000
4000
6000
GNF
(MHz)
20
12
13.5
13.5
12
10
12
20
14
13
15
16
18
7
11
VCE
(V)
6
15
6
25
25
15
15
6
5
10
10
1.5
10
5
5
10
10
Ic
(mA)
5
50
1.5
50
50
40
60
1
25
14
12
3
15
30
14
15
10
NF min
(dB)
4.5
-4.5
---2.5
-2.5
5
5.5
3
2.5
1.9
2.5
1.5
2.9
Case
Style
TO-72
TO-39
SOT-23
TO-39
TO-39
TO-39
TO-39
TO-72
TO-72
TO-72
TO-72
SOT-23
TO-72
Macro T
Macro T
TO-72
SOT-23
Part
Number
2N5179
2N5109
MMBR5179LT1
MRF545
MRF544
MRF586
MRF517
2N5031
BFY90
2N6304
2N2857
BFR92ALTI
MRF914
BFR91
BFR90
MRF904
MMBR911LT1
Power Devices
• Transistors for common emitter class A, B, and C operation
• Thru-hole metal cans, plastic Macro, and SO-8 packages
up to 1 GHz
• Applications include: land mobile and RFS radios, wireless alarms, • Device gain >8dB & Pout up to 4W at 7.5V and 12V
and keyless entry
• Mobile and held and mobile predriver amplifier applications
Power Devices
Up to 1 GHz
Si Bipolar Class
A/B/C
Common Emitter
38
Freq
(MHz)
175
175
175
175
175
400
400
400
470
470
870
870
Supply
(V)
12.5
12.5
12.5
12.5
12.5
28
28
28
12.5
12.5
12.5
12.5
Pout
(W)
1
1
1.75
3
4
1
1
1
3
2
0.75
1.5
Gain
(dB)
10
17
11.5
7.8
12
10
10
10
10
8
8
8
Style
Packing
TO-39
SO-8
TO-39
TO-39
TO-39
TO-39
TO-39
SO-8
TO-39
TO-39
Pwr Macro
Pwr Macro
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
Part
Number
2N4427
SRF4427
MRF607
2N6255
SD1127
2N3866
2N3866A
MRF3866
MS1649
SD1444
MRF837
MRF557
Broadcast / TV
VHF TV Broadcast
• 50-175MHz single ended or balanced transistors for common emitter class A & AB ope
UHF TV Broadcast
• 0.5-250W Psync with 28-32V Vcc
VHF TV Broadcast
• 50-225MHz single ended or balanced Si Bipolar
• 50-175MHz single ended or balanced transistors for common emitterUHF
class
TV Broadcast
transistors for common emitter class A & AB operation
A & AB operation
• 50-225MHz single ended or balanced Si Bipolar transistors for common emitter class A
with
• 0.5-150W
• 0.5-150W Psync
Vcc of 28VPsync with Vcc of 28V • 0.5-250W Psync with 28-32V Vcc
BROADCAST / TV
Freq
VHF TV 174-225 MHz
Class A/AB
Common Emitter
UHF TV 470-860 MHz
Class A
Common Emitter
UHF TV 470-860 MHz
Class AB
Common Emitter
UHF 860-960 MHz
Class A/AB
Common Emitter
(MHz)
225
225
225
225
225
860
860
860
860
860
860
860
860
Pout
Min
(W)
14
20
20
100
200
0.5
1
2
4
8
12
20
100
Gain
Min
(dB)
14
8
7.5
11
11
10
10
10
8.5
9
8.9
8.5
8.5
(V)
28
25
28
28
32
20
20
25
25
26.5
26.5
26.5
28
860
860
860
860
860
860
860
860
960
960
0.5
1
2
4
14
25
30
150
0.9
30
9.5
10
8.5
7
8.5
9
7.5
6.5
9.5
20
20
25
25
25
25
24
28
24
MICROWAVE
Microwave
------50
45
-24
Icq
VSWR
Load
(mA)
2.5
2.5
3.5
0.2
1
0.22
0.44
0.41
0.85
1.7
1.7
2.7
0.3
IMD
Typ
(dB)
-55
-50
-50
-50
-50
-60
-60
-60
-60
-58
-52
-48
--
0.22
0.44
0.45
0.85
1.65
3.2
0.06
2x0.5
0.125
-60
-60
-60
-60
-45
-45
-60
---
----------
-----30:1
30:1
30:1
30:1
3:01
3:01
3:01
5:01
θjc
Case
Style
(°C/W)
1.5
M111
1.2
M130
1.2
M164
1.2
M168
0.45
M175
22
55FT-2
12
55FT-2
10
55FT-2
7
55FT-2
2.5
55JV-2
1.6
55JT-2
1.2
55JV-2
0.6
55RT-2
5.5
9
11
5.5
2.5
1.3
2
0.55
20
M122
M122
M122
M122
M156
M173
M142
M175
M123
M142
Part
Number
MS1277
MS1279
MS1280
MS1278
SD1485
UTV005
UTV010
UTV020
UTV040
UTV080
UTV120
UTV200
UTV8100B
MS1502
MS1512
MS1501
MS1581
MS1579
MS1582
MS1454
MS1533
SD1420-01
MS1453
• Si Bipolar Common Base Class C operation
Each deviceand
fullyglass
tested
to the specification
• All gold •metalization
passivation
for high reliability and long term operation
• Each device fully tested to the specification
Freq
2.3 GHz
Si Bipolar Class C
Common Base
η
Typ
(%)
------------55
• All
gold metalization
and
passivation for high reliability and long t
• Si Bipolar
Common
Base Class
C glass
operation
Cob
(V)
η
Typ
(%)
28
28
28
28
20
20
20
40
35
40
35
40
40
40
4
3.2
5
9.5
4
7
10
30:1
30:1
30:1
-30:1
10:1
10:1
Gain
min
(dB)
Vcc
Cob
VSWR
Load
Pout
Max
(W)
Gain
min
(dB)
Vcc
(MHz)
Pout
Min
(W)
2000
2000
2000
2000
2300
2300
2300
1
1
3
3
1.5
4
7
0.125
0.2
0.47
0.5
0.24
0.63
1.1
9.5
7
8.6
7.8
8.5
8.5
8.5
Freq
Pin
Max
(W)
Microwave
2.0 GHz
Si Bipolar Class C
Common Base
Vcc
VSWR
Load
(pF)
θjc
Case
Style
Part
Number
35
25
15
8
31
17
8.5
55BT-1
M210
55BT-1
M210
55BT-1
55BT-1
55BT-1
2001
MS3022
2003
MS2003
2301
2304
2307
θjc
Case
Style
Part
Number
(°C/W)
(MHz)
Pout
Min
(W)
(V)
η
Typ
(%)
1000 -1400 MHz
Si Bipolar Class C
Common Base
1000 - 1400
1000 - 1400
6
12
1.2
2.5
7
7.3
28
28
40
40
6.5
12
10:1
30:1
9
4.5
55LV-1
55LT-1
1014-6A
1014-12
1700-2000 MHz
Si Bipolar Class C
Common Base
2200 - 2300
2200 - 2400
2200 - 2500
2400 - 2470
1.7
6
3.5
25
0.25
1.2
0.5
4.4
8.5
7
8.5
7.5
22
22
24
24
35
40
40
49
--7
--
10:1
10:1
10:1
3:1
24
8
17
2.5
55LV-1
55LV-1
55LV-1
55AP-1
2223-1.7
2224-6L
2225-4L
2424-25
Microwave Broadband
(pF)
(°C/W)
39
Linear/Communications/Bias
Linear
• Class A driver transistors for applications from • Class A driver transistors for applications from 1MHz-2.3GHz and power levels from 0.25-20W
1MHz-2.3GHz and power levels from 0.25-20W
• Emitter balasted transistors are fully tested under bias conditions for linearity, power gain, load mismatch tolerance
2013 Short Form Catalog - Linear
2013 Short Form Catalog - Linear
Si Bipolar Class A
Common Emmiter
Si Bipolar Class A
Common
100-500Emmiter
MHz
100-500 MHz
500-1000MHz
500-1000MHz
500-1000 MHz
Internal Pre-match
500-1000 MHz
Internal Pre-match
1.0-2.0 GHz
(Operational from DC to 2.0 GHz)
1.0-2.0 GHz
(Operational from DC to 2.0 GHz)
2.0-2.3 GHz, Class A, Common Emitter (Operational from DC to 2.3 GHz)
2.0-2.3 GHz, Class A, Common Emitter (Operational from DC to 2.3 GHz)
Freq
1-500
(MHz)
Pout
Min
Pout
(W)
Min
0.5
(W)
Pin
Max
Pin
(W)
Max
0.02
(W)
Gain
min
Gain
(dB)
min
12
(dB)
1-500
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
2000
2000
2000
2000
2000
2000
2000
2000
2300
2300
2300
2300
2300
2300
2300
2300
2300
2300
2300
2300
0.5
0.5
1.5
0.5
3
1.5
6
3
6
5
20
5
20
0.11
0.5
0.11
0.8
0.5
1
0.8
1
0.3
0.5
0.3
0.8
0.5
1.7
0.8
2.5
1.7
1
2.5
1
0.02
0.08
0.2
0.08
0.5
0.2
0.95
0.5
0.95
0.5
3
0.5
3
0.012
0.1
0.012
0.15
0.1
0.2
0.15
0.2
0.03
0.07
0.03
0.14
0.07
0.34
0.14
0.6
0.34
0.16
0.6
0.16
12
9
9.5
9
9
9.5
8.5
9
8.5
10
8
10
8
9
7
9
7
7
7
7
7
10
9.5
10
9.5
9.5
7.6
9.5
6.5
7.6
10
6.5
10
Freq
(MHz)
COMMUNICATIONS LINEAR
θjc
θjc
(°C/W)
(pF)
VSWR
Load
VSWR
Load
30:1
2
3.8
2
7.3
3.8
10.8
7.3
10.8
16
40
16
40
2.5
2
2.5
2
2
5
2
5
2.5
2.4
2.5
3
2.4
4.8
3
6.5
4.8
3.4
6.5
3.4
30:1
30:1
30:1
30:1
6:1
30:1
10:1
6:1
10:1
30:1
30:1
30:1
30:1
20:1
30:1
20:1
6:01
30:1
15:1
6:01
15:1
9:1
6:1
9:1
10:1
6:1
6:1
10:1
10:1
6:1
30:1
10:1
30:1
Vcc
Icq
Cob
Vcc
(V)
Icq
(pF)
Cob
(pF)
12.5
(V)
0.25
(pF)
12.5
20
20
20
20
20
20
20
20
20
20
20
20
18
20
18
20
20
18
20
18
15
20
15
20
20
20
20
20
20
15
20
15
0.25
0.14
0.22
0.14
0.44
0.22
0.88
0.44
0.88
1
2.8
1
2.8
0.05
0.14
0.05
0.18
0.14
0.22
0.18
0.22
0.1
0.12
0.1
0.14
0.12
0.27
0.14
0.42
0.27
0.2
0.42
0.2
33
(°C/W)
Case
Style
Case
Style
55AZ-2
Part
Number
Part
Number
MPA201
33
33
29
33
12.5
29
8.3
12.5
8.3
7
1.5
7
1.5
45
33
45
33
33
17
33
17
45
35
45
35
35
16
35
11
16
30
11
30
55AZ-2
55ET-2
55FT-2
55ET-2
55FT-2
55FT-2
55FT-2
55FT-2
55FT-2
55CT-2
55AT-2
55CT-2
55AT-2
M210
55ET-2
M210
55EU-2
55ET-2
M210
55EU-2
M210
55BT-2
55BT-2
55BT-2
55BT-2
55BT-2
55BT-2
55BT-2
55BT-2
55BT-2
55BT-2
55BT-2
55BT-2
MPA201
1A5
10A015
1A5
10A030
10A015
10A060
10A030
10A060
10AM05
10AM20
10AM05
10AM20
MSC80064
2A5
MSC80064
2A8
2A5
MS3011
2A8
MS3011
23A003
23A005
23A003
23A008
23A005
23A017
23A008
23A025
23A017
80143
23A025
80143
• Broadband, high power class AB linear transistor
• Broadband,
power
class AB
linear transistor
power
output coveringhigh
the full
500-1000MHz
range
Communications
Linear•• Highest
Broadband, high power class AB linear transistor
COMMUNICATIONS LINEAR
Freq
Si Bipolar Class AB
Common Emitter
Si Bipolar Class AB
Common Emitter
500-1000 MHz
Freq
(MHz)
500-1000 MHz
1000
1000
(MHz)
• Highest
Pout
Min
Pout
(W)
Min
50
(W)
50
power
output covering
full 500-1000MHz
• Highest
powertheoutput
covering range
the full
VSWR
Pin
Gain
Vcc
Icq
η
Load
Max
min
Typ
VSWR
Pin
Gain
Vcc
Icq
η
(W)
(dB)
(V)
(pF)
(%)
Load
Max
min
Typ
10
7
28
0.1
50
30:1
(W)
(dB)
(V)
(pF)
(%)
10
7
28
BIAS DEVICES
Bias Devices
• Designed for use in the biasing of high power 5/26/2013
silicon transistors
•5/26/2013
Feature excellent thermal tracking to provide the highest performance over the entire operating temperature range
40
Bias
Current
(A)
0.35
0.35
1
TO 0.35
1
0.35
0.35
500-1000MHz range
θjc
θjc
(°C/W)
1.4
(°C/W)
Case
Style
Case
Style
55AV-2
Part
Number
Part
Number
0510-50A
• Designed
for use 30:1
in the biasing
power silicon
transistors
0.1
50
1.4 of high
55AV-2
0510-50A
• Feature excellent thermal tracking to provide the highest performance
over the entire operating temperature range
Resistance
Case
Style
Part
Number
(Ohm)
1
55FV
BYI-1
1 Diode-Transistor
55GV SFCBYI-1F
RFIS
May 2013 MASTER WBG May 25.xls
1
55GU
Z0-28F
RFIS Diode-Transistor SFC May 2013 MASTER WBG May 25.xls
1
55FU
BYI-1Z
1
55LU
Case Styles
55AP
55AR
55AT
55AV
55AW
55AY
55AZ
55BT
55CT
55CX
55ET
55FT
55FU
55FW
55HT
55HV
55HW
55HX
55JT
55JU
55JV
55KT
55KS
55KV
55LT
55LU
55LV
55QM
55QX
55QZ
55RT
55SM
55ST
55SW
55TU
41
Case Styles
M102
M103
M105
M106
M111
M112
M113
M115
M122
M123
M138
M142
M156
M130
M135
M164
M168
M173
M174
M175
M177
M198
M208
M210
M214
M216
M218
M220
M222
Macro T
Macro X
Power Macro
SO-8
42
TO-247
TO-39
TO-72
Notes
43
Diode Products:
Power Transistor Products:
Microsemi Corporation
Microsemi Corporation
RF Integrated Solutions
RF Integrated Solutions
75 Technology Drive
3000 Oakmead Village Drive
Lowell, MA 01851-5293
Santa Clara, CA 95051-0808
+1.978.442.5600
+1.408.986.8031
+1.978.937.3748
+1.408.986.8120
www.microsemi.com
email: [email protected]
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo, CA 92656 USA
Within the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Fax: +1 (949) 215-4996
email: [email protected]
www.microsemi.com
44
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system
solutions for communications, defense & security, aerospace and industrial markets. Products include
high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs,
SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete
components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and
midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo,
Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.
©2013 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks
and service marks are the property of their respective owners.
MS4-009-13