1214GN-120E/EL/EP Datasheet 120W L-Band Radar GaN Power Transistor and Pallet Amplifier 120W L-Band Radar GaN Power Transistor and Pallet Amplifier Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. 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All other trademarks and service marks are the property of their respective owners. 2 120W L-Band Radar GaN Power Transistor and Pallet Amplifier Revision History 1.1 Revision 1.0 Revision 1.0 was the first publication of this document. 3 120W L-Band Radar GaN Power Transistor and Pallet Amplifier Contents Revision History.............................................................................................................................. 3 1.1 Revision 1.0 ................................................................................................................................................ 3 2 Product Overview .................................................................................................................... 7 2.1 Applications ............................................................................................................................................... 7 2.1.1 Key Features ................................................................................................................................ 8 3 Electrical Specifications ............................................................................................................ 9 3.1 Absolute Maximum Ratings ....................................................................................................................... 9 3.2 Electrical Characteristics at 25 °C ............................................................................................................... 9 3.3 Functional Characteristics at 25 °C ............................................................................................................ 9 3.4 Typical Broadband Performance Data (300 µS, 10% Pulsing) .................................................................. 10 3.5 Critical Performance at PIN = 4 W (34 dBm) ............................................................................................. 11 4 Transistor Impedance Information......................................................................................... 12 5 Transistor Test Information .................................................................................................... 13 6 Package Outline and Pin Information .................................................................................... 14 6.1 55-QQ Common Source Package Dimensions and Pin Information......................................................... 14 6.2 55-QQP Common Source Package Dimensions and Pin Information ...................................................... 15 6.3 Overall Pallet Dimensions ........................................................................................................................ 16 4 120W L-Band Radar GaN Power Transistor and Pallet Amplifier List of Figures Figure 1 Case Outline 55-QQ Common Source (0.160" × 0.550")................................................................................ 7 Figure 2 Case Outline 55-QQP Common Source (0.160" × 0.230").............................................................................. 7 Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150") ................................................................................. 7 Figure 4 Typical Broadband Performance Data Graphs ............................................................................................. 10 Figure 5 Impedance Definition................................................................................................................................... 12 Figure 6 55-QQ Package Dimensions and Pin Information ........................................................................................ 14 Figure 7 55-QQP Package Dimensions and Pin Information ...................................................................................... 15 Figure 8 Pallet Package Dimensions .......................................................................................................................... 16 5 120W L-Band Radar GaN Power Transistor and Pallet Amplifier List of Tables Table 1 Absolute Maximum Ratings ............................................................................................................................ 9 Table 2 Typical Electrical Characteristics at 25 °C ........................................................................................................ 9 Table 3 Typical Functional Characteristics at 25 °C...................................................................................................... 9 Table 4 Typical Broadband Performance Data (300 µS, 10% Pulsing) ....................................................................... 10 Table 5 Critical Performance at PIN = 4 W (34 dBm) .................................................................................................. 11 Table 6 55-QQ Package Dimensions .......................................................................................................................... 14 Table 7 55-QQP Package Dimensions ........................................................................................................................ 15 6 120W L-Band Radar GaN Power Transistor and Pallet Amplifier 2 Product Overview The 1214GN-120E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output power under 300 μS pulse width and 10% long term duty cycle pulsing across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is available in two package types, as well as mounted on a compact footprint 50Ω IN/OUT pallet, and is specifically designed for L-band pulsed primary radar applications. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. Export Classification: EAR-99. Figure 1 Case Outline 55-QQ Common Source (0.160" × 0.550") Figure 2 Case Outline 55-QQP Common Source (0.160" × 0.230") Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150") 2.1 Applications The 1214GN-120E and 1214GN-120EL transistors and the 1214GN-120EP pallet are specifically designed for L-band pulsed primary radar applications. 7 120W L-Band Radar GaN Power Transistor and Pallet Amplifier 2.1.1 Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: • 1200–1400 MHz, 120 W pulsed output power, 300 µS 10% pulsing • Common source, Class AB, 50 V bias voltage • High efficiency: >60% typical across the frequency band • Extremely compact size • High power gain: >16.8 dB • Excellent gain flatness • Ideal for radar, L-Band avionics, communications, and industrial applications • Utilizes all-gold metallization and eutectic die attach for highest reliability • 50 Ω IN/OUT lumped element, very small footprint, plug-and-play pallets available 8 120W L-Band Radar GaN Power Transistor and Pallet Amplifier 3 Electrical Specifications 3.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings at 25 °C unless otherwise specified. Table 1 Absolute Maximum Ratings Rating Units Maximum power dissipation Device dissipation at 25 °C 265 W Maximum voltage and current Drain-Source voltage (VDSS) 125 V Gate-Source voltage (VGS) –8 to 0 V Storage temperature (TSTG) –55 to 125 °C Operating junction temperature 200 °C Maximum temperatures 3.2 Value Electrical Characteristics at 25 °C The following table shows the typical electrical characteristics at 25 °C Table 2 Typical Electrical Characteristics at 25 °C Symbol Characteristics Test Conditions Min Typ POUT Output power PIN = 2.5 W, Freq = 1200, 1300, 1400 MHz 120 130 W GP Power gain PIN = 2.5 W, Freq = 1200, 1300, 1400 MHz 16.8 17.16 dB ȠD Drain efficiency PIN = 2.5 W, Freq = 1200, 1300, 1400 MHz 57 65 % Dr Droop PIN = 2.5 W, Freq = 1200, 1300, 1400 MHz VSWR-T Load mismatch tolerance PIN = 2.5 W, Freq = 1500 MHz, 100 µS-10% 5:1 ӨJC Junction-Case thermal resistance 300 µS, 10% duty cycle 1.25 °C/W Max Units 0.15 Max 0.6 Units dB Bias Condition: VDD = 50 V, IDQ = 30 mA constant current (VGS = –2.0 to –4.5 V typical) 3.3 Functional Characteristics at 25 °C Table 3 Typical Functional Characteristics at 25 °C Symbol Characteristic Test Conditions Min Typ ID(Off) Drain leakage current VGS = –8 V, VD = 125 V 12 mA IG(Off) Gate leakage current VGS = –8 V, VD = 0 V 4 mA 9 120W L-Band Radar GaN Power Transistor and Pallet Amplifier 3.4 Typical Broadband Performance Data (300 µS, 10% Pulsing) Table 4 Typical Broadband Performance Data (300 µS, 10% Pulsing) Frequency PIN (W) POUT (W) ID (mA) IRL (dB) ȠD (%) GP (dB) Droop (dB) 1200 MHz 2.5 146 477 –7.0 65 17.65 0.15 1300 MHz 2.5 141 440 –10.0 69 17.50 0.15 1400 MHz 2.5 141 400 –8.5 76 17.50 0.14 Figure 4 Typical Broadband Performance Data Graphs 10 120W L-Band Radar GaN Power Transistor and Pallet Amplifier 3.5 Critical Performance at PIN = 4 W (34 dBm) Table 5 Critical Performance at PIN = 4 W (34 dBm) Freq (GHz) Test Condition POUT (W) GP (dB) ȠD (%) Droop (dB) 1.2 300 µS – 10% 146 17.65 65 0.15 1.2 1 mS – 10% 144 17.60 66 0.25 1.2 3 mS – 30% 135 17.30 61 0.60 1.3 300 µS – 10% 141 17.50 69 0.15 1.3 1 mS – 10% 144 17.60 70 0.25 1.3 3 mS – 30% 143 17.60 67 0.40 1.4 300 µS – 10% 141 17.50 76 0.15 1.4 1 mS – 10% 138 17.40 75 0.25 1.4 3 mS – 30% 144 17.60 74 0.40 11 120W L-Band Radar GaN Power Transistor and Pallet Amplifier 4 Transistor Impedance Information The following diagram shows the transistor impedance information for 1214GN-120E/EL/EP. Figure 5 Impedance Definition Output Matching Network D Input Matching Network G S ZLOAD 50 Ω ZSOURCE 50 Ω Note: ZSOURCE is looking into the input circuit ZLOAD is looking into the output circuit For information about source and load impedances for 1214GN-120E/EL/EP, contact your Microsemi representative. 12 120W L-Band Radar GaN Power Transistor and Pallet Amplifier 5 Transistor Test Information For the latest transistor test information for 1214GN-120E/EL/EP, contact your Microsemi representative. 13 120W L-Band Radar GaN Power Transistor and Pallet Amplifier 6 Package Outline and Pin Information The 1214GN-120E transistor is available in the 55-QQP case outline and the 1214GN-120EL transistor is available in the 55-QQP case outline. The 1214GN-120EP is available in the 90-1214GN120EP pallet outline. All three products are configured for common source operation. 6.1 55-QQ Common Source Package Dimensions and Pin Information Figure 6 55-QQ Package Dimensions and Pin Information Pin 1: Drain, Pin 2: Source, Pin 3: Gate Table 6 55-QQ Package Dimensions Dim Millimeters Tol (mm) Inches Tol (in.) A 13.970 0.250 0.550 0.010 B 4.570 0.250 0.160 0.010 C 3.860 0.330 0.152 0.013 D 1.270 0.130 0.050 0.005 E 1.020 0.130 0.040 0.005 F 1.700 0.130 0.067 0.005 G 0.130 0.025 0.005 0.001 H 8.130 0.250 0.320 0.010 I 45° 5° 45° 5° J 5.080 0.250 0.200 0.010 K 2.54 DIA 0.130 0.100 DIA 0.005 L 1.270 0.130 0.050 0.005 M 9.530 0.130 0.375 0.005 14 120W L-Band Radar GaN Power Transistor and Pallet Amplifier 6.2 55-QQP Common Source Package Dimensions and Pin Information Figure 7 55-QQP Package Dimensions and Pin Information Pin 1: Drain, Pin 2: Source, Pin 3: Gate Table 7 55-QQP Package Dimensions Dim Millimeters Tol (mm) Inches Tol (in.) A 5.840 0.250 0.230 0.010 B 4.060 0.250 0.160 0.010 C 3.170 0.050 0.125 0.002 D 1.270 0.130 0.050 0.005 E 1.020 0.130 0.040 0.005 F 1.570 0.130 0.062 0.005 G 0.130 0.020 0.005 0.001 H 8.120 0.250 0.320 0.010 I 45° 5° 45° 5° J 5.080 0.250 0.200 0.010 K 1.400 0.130 0.055 0.005 15 120W L-Band Radar GaN Power Transistor and Pallet Amplifier 6.3 Overall Pallet Dimensions Figure 8 Pallet Package Dimensions Dimensions 1.200" × 0.600" × 0.150" 16