PD - 97173A IRF7855PbF Applications l Primary Side Switch in Bridge Topology in Isolated DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters l Secondary Side Synchronous Rectification Switch for 15Vout l Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS RDS(on) max ID 60V 9.4m:@VGS = 10V 12A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 60 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.7 IDM Pulsed Drain Current 97 PD @TA = 25°C c Maximum Power Dissipation Linear Derating Factor e h dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and TSTG Storage Temperature Range A 2.5 W 0.02 W/°C 9.9 -55 to + 150 V/ns °C Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) ei Typ. Max. Units ––– 20 °C/W ––– 50 Notes through are on page 8 www.irf.com 1 05/17/06 IRF7855PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 60 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS ––– ––– 72 ––– ––– 7.4 9.4 3.0 ––– 4.9 mΩ V VDS = VGS, ID = 100µA µA VDS = 60V, VGS = 0V nA VGS = 20V ––– ––– 20 ––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 V Conditions ––– VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 12A f VDS = 60V, VGS = 0V, TJ = 125°C VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units ––– ––– Conditions gfs Qg Forward Transconductance 14 S VDS = 25V, ID = 7.2A Total Gate Charge ––– 26 39 Qgs Gate-to-Source Charge ––– 6.8 ––– nC VDS = 30V Qgd Gate-to-Drain ("Miller") Charge ––– 9.6 ––– td(on) Turn-On Delay Time ––– 8.7 ––– VDD = 30V tr Rise Time ––– 13 ––– ID = 7.2A td(off) Turn-Off Delay Time ––– 16 ––– tf Fall Time ––– 12 ––– VGS = 10V Ciss Input Capacitance ––– 1560 ––– VGS = 0V Coss Output Capacitance ––– 440 ––– Crss Reverse Transfer Capacitance ––– 120 ––– Coss Output Capacitance ––– 1910 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 320 ––– VGS = 0V, VDS = 48V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 520 ––– VGS = 0V, VDS = 0V to 48V ID = 7.2A VGS = 10V ns RG = 6.2Ω f f VDS = 25V pF ƒ = 1.0MHz g Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. ––– Max. 540 Units mJ ––– 7.2 A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ISM (Body Diode) Pulsed Source Current ––– ––– 97 VSD Diode Forward Voltage ––– ––– 1.3 trr Reverse Recovery Time ––– 33 50 ns Qrr Reverse Recovery Charge ––– 38 57 nC ton Forward Turn-On Time 2 (Body Diode)c ––– ––– 2.3 Conditions MOSFET symbol A V showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 7.2A, VGS = 0V TJ = 25°C, IF = 7.2A, VDD = 25V di/dt = 100A/µs S f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF7855PbF 100 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1 0.1 4.5V 10 BOTTOM 4.5V 1 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 25°C Tj = 150°C 0.01 0.1 0.1 1 10 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 1 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V T J = 150°C 10 T J = 25°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 ID = 12A VGS = 10V 1.5 1.0 0.5 3 4 5 6 7 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF7855PbF 10000 12.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd VGS, Gate-to-Source Voltage (V) ID= 7.2A C, Capacitance (pF) Coss = Cds + Cgd Ciss 1000 Coss Crss 10.0 VDS= 48V VDS= 30V VDS= 12V 8.0 6.0 4.0 2.0 0.0 100 1 10 0 100 10 20 25 30 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 ID, Drain-to-Source Current (A) 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150°C 10 T J = 25°C 1 100µsec 10 1msec 1 0.1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 10msec 0.01 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 15 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) ISD, Reverse Drain Current (A) 5 1.2 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7855PbF 12 RD VDS ID, Drain Current (A) 10 VGS D.U.T. RG 8 + -VDD 10V 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VDS 90% 0 25 50 75 100 125 150 T A , Ambient Temperature (°C) 10% VGS Fig 9. Maximum Drain Current vs. Ambient Temperature tr td(on) t d(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 Thermal Response ( Z thJA ) 10 1 0.1 τJ 0.01 R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τ3 τ2 Ci= τi/Ri Ci= τi/Ri τ3 τA τA Ri (°C/W) τi (sec) 6.734 0.027848 27.268 1.3813 16.003 53 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 16 14 RDS(on), Drain-to -Source On Resistance (m Ω) RDS(on), Drain-to -Source On Resistance ( mΩ) IRF7855PbF T J = 125°C 12 10 T J = 25°C 8 6 Vgs = 10V 4 10 20 30 40 50 60 70 80 30 ID = 7.2A 25 20 T J = 125°C 15 10 T J = 25°C 5 0 4 90 100 ID, Drain Current (A) VCC QGS QGD Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS L VDS D.U.T RG IAS 20V I AS tp DRIVER + V - DD 0.01Ω Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 9 10 11 12 13 14 15 16 2400 VG Charge tp 8 QG VGS 1K 7 Fig 13. On-Resistance vs. Gate Voltage EAS , Single Pulse Avalanche Energy (mJ) DUT 0 6 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Drain Current L 5 A ID 0.41A 0.58A BOTTOM 7.2A TOP 2000 1600 1200 800 400 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 15c. Maximum Avalanche Energy vs. Drain Current www.irf.com IRF7855PbF SO-8 Package Details ' ,1&+(6 0,1 0$; $ $ E F ' ( %$6,& H H %$6,& + . / \ ',0 % $ + >@ ( $ ; H H $ ;E >@ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & \ >@ ;/ ;F & $ % 127(6 ',0(16,21,1*72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking (;$03/(7+,6,6$1,5)026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 www.irf.com ;;;; ) '$7(&2'(<:: 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 7 IRF7855PbF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 21mH, RG = 25Ω, IAS = 7.2A. When mounted on 1 inch square copper board, t ≤ 10 sec. Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ISD ≤ 7.2A, di/dt ≤ 650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Rθ is measured at TJ of approximately 90°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/06 8 www.irf.com