PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew 31 22 160 45 0.3 ± 20 210 25 4.5 5.0 -55 to + 175 Units A W W/°C V mJ A mJ V/ns 300 (1.6mm from case ) 10 lbfin (1.1Nm) °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Typ. Max. Units 3.3 65 °C/W 11/13/03 IRFIZ44NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 2.0 17 Typ. 0.055 7.3 69 47 60 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance 4.5 LS Internal Source Inductance 7.5 Ciss Coss Crss C Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance 1300 410 150 12 V(BR)DSS ∆V(BR)DSS/∆TJ IGSS Max. Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA 0.024 Ω VGS = 10V, ID = 17A 4.0 V VDS = VGS, ID = 250µA S VDS = 25V, ID = 25A 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 65 ID = 25A 12 nC VDS = 44V 27 VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 25A ns RG = 12Ω RD = 1.1Ω, See Fig. 10 Between lead, 6mm (0.25in.) nH G from package and center of die contact VGS = 0V V DS = 25V pF = 1.0MHz, See Fig. 5 = 1.0MHz D S Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 31 showing the A G integral reverse 160 p-n junction diode. S 1.3 V TJ = 25°C, IS = 17A, VGS = 0V 65 98 ns TJ = 25°C, IF = 25A 160 240 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. VDD = 25V, starting TJ = 25°C, L = 470µH t=60s, =60Hz ISD ≤ 25A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, Uses IRFZ44N data and test conditions max. junction temperature. ( See fig. 11 ) RG = 25Ω, IAS = 25A. (See Figure 12) T J ≤ 175°C IRFIZ44NPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 100 4.5V 10 20µs PULSE WIDTH TTCJ = 25°C 1 0.1 1 10 100 A 4.5V 10 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25°C TJ = 175°C 10 V DS = 25V 20µs PULSE WIDTH 4 5 6 7 8 9 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 A 100 Fig 2. Typical Output Characteristics 1000 1 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 20µs PULSE WIDTH TCT=J 175°C 1 0.1 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 10 A I D = 41A 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature IRFIZ44NPbF C, Capacitance (pF) 2000 Ciss 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V GS , Gate-to-Source Voltage (V) 2500 I D = 25A 16 1500 12 Coss 1000 Crss 500 0 1 10 100 A 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 VDS , Drain-to-Source Voltage (V) 20 30 40 50 60 70 A Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) V DS = 44V V DS = 28V 100 TJ = 175°C TJ = 25°C 10 VGS = 0V 1 0.5 1.0 1.5 2.0 2.5 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 3.0 100 10µs 100µs 10 1ms TC = 25°C TJ = 175°C Single Pulse 1 1 10ms 10 A 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area IRFIZ44NPbF RD VDS 35 VGS I D , Drain Current (A) 30 D.U.T. RG 25 + -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 15 VDS 10 90% 5 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 IRFIZ44NPbF D.U.T. RG + V - DD IAS 10 V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD EAS , Single Pulse Avalanche Energy (mJ) L VDS 500 TOP BOTTOM 400 300 200 100 0 VDD = 25V 25 VDS ID 10A 18A 25A 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit A 175 IRFIZ44NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ISD * IRFIZ44NPbF TO-220 Full-Pak Package Outline TO-220 Full-Pak Part Marking Information E X AMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 199 9 IN T H E AS S E MB L Y L INE "K " Note: "P" in assembly line position indicates "Lead-Free" IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T N U MB E R IR F I840G 924 K 34 32 DAT E CODE YE AR 9 = 1999 WE E K 24 L INE K Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/