PD - 9.1403A
IRFIZ44N
HEXFET® Power MOSFET
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Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.024Ω
G
ID = 31A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
31
22
160
45
0.3
± 20
210
25
4.5
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
3.3
65
°C/W
8/25/97
IRFIZ44N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.055
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.3
69
47
60
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
1300
410
150
12
V(BR)DSS
∆V(BR)DSS/∆TJ
I GSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.024
Ω
VGS = 10V, ID = 17A
4.0
V
VDS = VGS, I D = 250µA
–––
S
VDS = 25V, ID = 25A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
V GS = 20V
nA
-100
VGS = -20V
65
ID = 25A
12
nC VDS = 44V
27
VGS = 10V, See Fig. 6 and 13
–––
VDD = 28V
–––
I D = 25A
ns
–––
RG = 12Ω
–––
RD = 1.1Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
V
DS = 25V
pF
–––
ƒ = 1.0MHz, See Fig. 5
–––
ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
t on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
31
––– –––
showing the
A
G
integral reverse
––– ––– 160
p-n junction diode.
S
––– ––– 1.3
V
TJ = 25°C, IS = 17A, VGS = 0V
––– 65
98
ns
TJ = 25°C, IF = 25A
––– 160 240
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 470µH
t=60s, ƒ=60Hz
RG = 25Ω, IAS = 25A. (See Figure 12)
ISD ≤ 25A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRFZ44N data and test conditions
IRFIZ44N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
I , D ra in -to -S o u rc e C u rre n t (A )
D
100
4.5 V
10
2 0µ s PU LSE W ID TH
TTCJ = 2 5°C
1
0.1
1
10
100
4 .5V
10
20 µs PU L SE W ID TH
T CT=J 175 °C
1
A
0.1
100
Fig 1. Typical Output Characteristics
2.5
R D S (o n ) , D ra in -to -S o u rc e O n R e sis ta n c e
(N o rm a liz e d )
TJ = 2 5 °C
TJ = 1 7 5 °C
10
V DS = 2 5V
2 0 µ s P U LS E W ID T H
1
4
5
6
7
8
9
V G S , G ate-t o-S ou rce V olt age (V )
Fig 3. Typical Transfer Characteristics
10
A
100
Fig 2. Typical Output Characteristics
1000
100
1
V D S , Drain-to-Source V oltage (V)
V D S , D rain-to-S ource V oltage (V )
I D , D r ain- to-S ourc e C u rre nt (A )
–––
I , D ra in -to -S o u rce C u rre n t (A )
D
TOP
10
A
I D = 41 A
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFIZ44N
C , C a p a c ita n c e (p F )
2000
V GS
C is s
C rs s
C os s
C iss
=
=
=
=
20
0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd
V G S , G a te -to -S o u rce V o lta g e (V )
2500
I D = 2 5A
V DS = 4 4V
V DS = 2 8V
16
1500
12
C os s
1000
C rss
500
0
10
4
FO R TES T C IR CU IT
SEE FIG U R E 13
0
A
1
8
100
0
10
V D S , Drain-to-Source V oltage (V)
30
40
50
60
A
70
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
O PER ATION IN TH IS AR EA L IMITED
BY R DS (on)
I D , D rain C urre nt (A )
I S D , R e v e rse D ra in C u rre n t (A )
20
100
TJ = 175 °C
TJ = 25°C
10
VG S = 0 V
1
0.5
1.0
1.5
2.0
2.5
V S D , Source-to-D rain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
3.0
100
1 0µs
100µ s
10
1 ms
10m s
T C = 2 5°C
T J = 1 75 °C
Sing le P ulse
1
A
1
10
100
VD S , D rain-to-Source Voltage (V )
Fig 8. Maximum Safe Operating Area
IRFIZ44N
RD
VDS
35
VGS
30
D.U.T.
RG
+
I D , Drain Current (A)
- VDD
25
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
15
VDS
10
90%
5
0
25
50
75
100
125
T C , Case Temperature
150
175
( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJC )
10
D = 0.50
1
Thermal Response
0.20
0.10
0.05
PDM
0.1
0.01
0.00001
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRFIZ44N
L
VDS
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
500
TO P
B OTTO M
400
ID
10 A
1 8A
25 A
300
200
100
VD D = 2 5V
0
25
50
A
75
100
125
150
175
VDS
Starting T J , Junction Temperature (°C)
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
QG
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFIZ44N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFIZ44N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417 )
10.40 (.409 )
ø
3 .40 (.1 33)
3 .10 (.1 23)
4.80 (.189 )
4.60 (.181 )
-A3.7 0 (.145)
3.2 0 (.126)
16 .0 0 (.630)
15 .8 0 (.622)
2.80 (.110)
2.60 (.102)
L EA D AS SIGN M EN T S
1 - GA T E
2 - D R AIN
3 - SO U R C E
7.10 (.280 )
6.70 (.263 )
1.15 (.045)
M IN .
NO T ES :
1 D IM E N SION IN G & T O LER AN C IN G
PE R A N SI Y1 4.5M , 1982
1
2
3
2 C O N T R OLL IN G D IM EN SION : IN C H .
3.30 (.130)
3.10 (.122)
-B -
13 .7 0 (.540)
13 .5 0 (.530)
C
A
1.40 (.05 5)
3X
1.05 (.04 2)
0.90 (.035 )
3X 0.70 (.028 )
0.25 (.010)
3X
M
A M
0.48 (.019 )
0.44 (.017 )
2.85 (.1 12)
2.65 (.1 04)
B
2 .5 4 (.100)
2X
D
B
M IN IM U M C R E EP AG E
D IST A N C E B ET W E EN
A -B -C -D = 4.80 (.189 )
Part Marking Information
TO-220 Fullpak
E XAM
: S
T HIS
N IRF
I840G
E X AM
PLE PLE
: T HI
IS AISN AIRF
1010
SE LY
MBLY
W ITW
H ITH
A S SAS
E MB
CODE
E401
LO TLOT
CO DE
9B 1M
A
IN TE R NA T ION A L
INT ER NAT IONA L
R EC T IF IER
IRIRF
F 1010
RE CTIF IER
I840G
LO GO
9246
P A RT NU M BE R
A
PA RT NU MBE R
LOGO
9 24 5
9BE 401 1M
A SAS
S EM
B LY
SE MBLY
LOLOT
T CO
DE E
COD
D A TE C OD E
ATEW )CODE
(YDYW
W )A R
Y(YYW
Y = YE
AR
WYY
W == YE
WE
EK
W W = W E EK
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http://www.irf.com/
Data and specifications subject to change without notice.
8/97