One Watt Darlington Transistors

MPSW13
One Watt Darlington
Transistor
NPN Silicon
http://onsemi.com
Features
• Pb−Free Package is Available*
COLLECTOR 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCES
30
Vdc
Collector −Base Voltage
VCBO
30
Vdc
Emitter −Base Voltage
VEBO
10
Vdc
Collector Current − Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
BASE
2
EMITTER 1
1
2
TO−92 (TO−226)
CASE 29−10
STYLE 1
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125
°C/W
Thermal Resistance, Junction−to−Case
RqJC
50
°C/W
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MPS
W13
AYWW G
G
MPSW13 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping †
MPSW13RLRA
TO−92
2,000/Tape & Reel
TO−92
(Pb−Free)
2,000/Tape & Reel
MPSW13RLRAG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 4
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPSW13/D
MPSW13
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CES
30
−
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
−
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
−
100
nAdc
5,000
10,000
−
−
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
−
1.5
Vdc
Base−Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
2.0
Vdc
fT
125
−
MHz
−
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
I C , COLLECTOR CURRENT (mA)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| • ftest.
CURRENT LIMIT
DUTY CYCLE ≤ 10%
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3.0 k
2.0 k
100 ms
1.0 ms
1.0 k
1.0 s
500
200
1.5
TA = 25°C
TC = 25°C
2.0
5.0
10
20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region − Safe Operating Area
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2
30
200 k
TJ = 125°C
h FE , DC CURRENT GAIN
100 k
70 k
50 k
25°C
30 k
20 k
10 k
7.0 k
5.0 k
−55°C
VCE = 5.0 V
3.0 k
2.0 k
5.0 7.0 10
20
50 70 100
30
200 300
500
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
MPSW13
3.0
IC =
50 mA
IC =
10 mA
2.5
1.5
1.0
0.5
0.1
0.2
0.5 1.0 2.0
q V , TEMPERATURE COEFFICIENTS (mV/° C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
5.0 7.0 10
20
30
50
200 300
70 100
500
−1.0
*APPLIES FOR IC/IB ≤ hFE/3.0
−2.0
100 200
500 1000
25°C TO 125°C
−55°C TO 25°C
−3.0
25°C TO 125°C
−4.0
qVB FOR VBE
−5.0
−6.0
−55°C TO 25°C
5.0 7.0 10
20
30
50
70 100
200 300
500
IC, COLLECTOR CURRENT (mA)
Figure 4. “ON” Voltages
Figure 5. Temperature Coefficients
4.0
20
VCE = 5.0 V
TJ = 25°C
f = 100 MHz
2.0
TJ = 25°C
C, CAPACITANCE (pF)
h FE , SMALL−SIGNAL CURRENT GAIN
50
*qVC FOR VCE(sat)
IC, COLLECTOR CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
20
Figure 3. Collector Saturation Region
1.6
0.6
5.0 10
IB, BASE CURRENT (mA)
Figure 2. DC Current Gain
0.8
TJ = 25°C
2.0
IC, COLLECTOR CURRENT (mA)
1.0
IC =
500 mA
IC =
250 mA
10
7.0
Cibo
5.0
Cobo
3.0
0.5
1.0
2.0
5.0
10
20
50
100
200
500
2.0
0.04
0.1
0.2
0.4
1.0
2.0
4.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. High Frequency Current Gain
Figure 7. Capacitance
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3
10
20
40
MPSW13
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−10
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
A
B
R
SEATING
PLANE
P
L
F
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
D
G
H
J
R
1 2 3
N C
SECTION X−X
N
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.135
−−−
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.457
0.533
0.407
0.482
1.15
1.39
2.42
2.66
0.46
0.61
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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4
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MPSW13/D