ONSEMI 2N4124

2N4123, 2N4124
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Symbol
2N4123
2N4124
2N4123
2N4124
Emitter−Base Voltage
VCEO
VCBO
Value
Vdc
30
25
1
EMITTER
Vdc
40
30
VEBO
5.0
Vdc
Collector Current − Continuous
IC
200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
2
BASE
Unit
TO−92
CASE 29
STYLE 1
1
12
3
STRAIGHT LEAD
BULK PACK
THERMAL CHARACTERISTICS
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
412x
AYWW G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
2N4123RLRM
TO−92
2000 / Tape & Ammo
TO−92
(Pb−Free)
5000 Units / Bulk
2N4124G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 4
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N4123/D
2N4123, 2N4124
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
30
25
−
−
40
30
−
−
5.0
−
−
50
−
50
50
120
150
360
25
60
−
−
−
0.3
−
0.95
250
300
−
−
−
8.0
−
4.0
50
120
200
480
2.5
3.0
−
−
50
120
200
480
−
−
6.0
5.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IE = 0)
2N4123
2N4124
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
2N4123
2N4124
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 2.0 mAdc, VCE = 1.0 Vdc)
2N4123
2N4124
(IC = 50 mAdc, VCE = 1.0 Vdc)
hFE
2N4123
2N4124
Collector−Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
fT
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Collector−Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Ccb
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz)
2N4123
2N4124
Current Gain − High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
hfe
|hfe|
2N4123
2N4124
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz)
2N4123
2N4124
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
http://onsemi.com
2
NF
MHz
pF
pF
−
−
dB
2N4123, 2N4124
200
10
100
5.0
Cibo
3.0
ts
70
50
TIME (ns)
CAPACITANCE (pF)
7.0
td
30
tf
tr
20
Cobo
2.0
VCC = 3 V
IC/IB = 10
VEB(off) = 0.5 V
10.0
7.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
5.0
20 30 40
1.0
2.0 3.0
Figure 1. Capacitance
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 2. Switching Times
AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
(VCE = 5 Vdc, TA = 25°C)
Bandwidth = 1.0 Hz
12
14
SOURCE RESISTANCE = 200 W
IC = 1 mA
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
f = 1 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1 kW
IC = 50 mA
4
2
0
0.1
SOURCE RESISTANCE = 500 W
IC = 100 mA
0.2
0.4
1
2
4
10
f, FREQUENCY (kHz)
IC = 1 mA
12
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
20
40
0
0.1
100
Figure 3. Frequency Variations
0.2
0.4
1.0 2.0
4.0
10
20
RS, SOURCE RESISTANCE (kW)
Figure 4. Source Resistance
http://onsemi.com
3
40
100
2N4123, 2N4124
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)
100
hoe , OUTPUT ADMITTANCE (m mhos)
hfe , CURRENT GAIN
300
200
100
70
50
30
50
20
10
5
2
1
0.1
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
Figure 5. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10-4 )
10
hie , INPUT IMPEDANCE (kΩ )
5.0
10
5.0
10
Figure 6. Output Admittance
20
5.0
2.0
1.0
0.5
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
Figure 7. Input Impedance
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
Figure 8. Voltage Feedback Ratio
STATIC CHARACTERISTICS
h FE , DC CURRENT GAIN (NORMALIZED)
2.0
TJ = +125°C
1.0
VCE = 1 V
+25°C
0.7
-55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain
http://onsemi.com
4
20
30
50
70
100
200
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
2N4123, 2N4124
1.0
TJ = 25°C
0.8
IC = 1 mA
30 mA
10 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 10. Collector Saturation Region
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.2
TJ = 25°C
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
1.0
0.8
VBE @ VCE = 1 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (mA)
100
1.0
0.5
qVC for VCE(sat)
0
-55°C to +25°C
-0.5
-55°C to +25°C
-1.0
+25°C to +125°C
qVB for VBE(sat)
-1.5
-2.0
200
+25°C to +125°C
0
Figure 11. “On” Voltages
20
40
60
80 100 120 140 160
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
http://onsemi.com
5
180 200
2N4123, 2N4124
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
N
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
T
SEATING
PLANE
G
K
D
X X
J
V
1
C
N
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
--2.04
2.66
1.50
4.00
2.93
--3.43
--STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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6
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2N4123/D