MPS6717 One Watt Amplifier Transistor NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 80 Vdc Collector −Base Voltage VCBO 80 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE 1 EMITTER 1 2 TO−92 (TO−226) CASE 29−10 STYLE 1 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W MPS 6717 AYWW G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPS6717 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPS6717 MPS6717G MPS6717RLRA MPS6717RLRAG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 2 1 Package Shipping † TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000/Tape & Reel TO−92 (Pb−Free) 2000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPS6717/D MPS6717 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 − Vdc Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 80 − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) ICBO − 0.1 mAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO − 10 mAdc 80 50 − 250 OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 250 mAdc, VCE = 1.0 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 250 mAdc, IB = 10 mAdc) VCE(sat) − 0.5 Vdc Base −Emitter On Voltage (IC = 250 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.2 Vdc Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb − 30 pF Small−Signal Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz) hfe 2.5 25 − SMALL− SIGNAL CHARACTERISTICS 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. hFE , DC CURRENT GAIN 400 TJ = 125°C VCE = 1.0 V 200 25°C −55°C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 2 50 70 100 200 300 500 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) MPS6717 1.0 1.0 TJ = 25°C TJ = 25°C 0.8 IC = 10 mA 0.6 50 mA 100 mA 250 mA V, VOLTAGE (VOLTS) 0.8 500 mA 0.4 0.2 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.05 0.1 0.2 1.0 0.5 2.0 5.0 IB, BASE CURRENT (mA) 10 20 0 0.5 50 1.0 2.0 Figure 2. Collector Saturation Region 20 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 500 Figure 3. “On” Voltages 80 θ VB, TEMPERATURE COEFFICIENT (mV/°C) −0.8 TJ = 25°C 60 C, CAPACITANCE (pF) −1.2 −1.6 qVB for VBE −2.0 −2.4 40 Cibo 20 10 8.0 6.0 −2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 Cobo 4.0 0.1 500 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Base−Emitter Temperature Coefficient 50 100 Figure 5. Capacitance 300 200 VCE = 2.0 V TJ = 25°C IC, COLLECTOR CURRENT (mA) f, T CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 200 100 70 50 DUTY CYCLE ≤ 10% 2k 1.0 ms 1k 100 ms 500 TA = 25°C 200 dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 10 1.0 200 Figure 6. Current−Gain — Bandwidth Product TC = 25°C 1.0 s dc MPS6717 2.0 5.0 10 20 60 80 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area http://onsemi.com 3 MPS6717 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−10 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. A B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X−X N INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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