MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G http://onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 1 ANODE Features SOT−23 (TO−236) CASE 318 Very Low Capacitance − Less Than 1.0 pF @ Zero V Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 3 CATHODE/ANODE MMBD352LT1G STYLE 11 1 CATHODE 3 CATHODE/ANODE Continuous Reverse Voltage Symbol Value Unit VR 7.0 VCC Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Total Device Dissipation FR−5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg −55 to +150 C PD RqJA PD 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 8 1 ANODE 3 CATHODE 2 ANODE MMBD354LT1G NSVMMBD354LT1G STYLE 9 1 CATHODE ANODE 3 2 CATHODE THERMAL CHARACTERISTICS Characteristic 2 ANODE MMBD353LT1G NSVMMBD353LT1G STYLE 19 MAXIMUM RATINGS (EACH DIODE) Rating 2 CATHODE 1 MMBD355LT1G STYLE 12 MARKING DIAGRAM Mxx M G G 1 Mxx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MMBD352LT1/D MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Rating Symbol Forward Voltage (IF = 10 mAdc) VF Reverse Leakage Current (Note 3) (VR = 3.0 V) (VR = 7.0 V) IR Capacitance (VR = 0 V, f = 1.0 MHz) C Min Max − 0.60 − − 0.25 10 − 1.0 Unit V mA pF 3. For each individual diode while the second diode is unbiased. ORDERING INFORMATION Device MMBD352LT1G MMBD352LT3G MMBD353LT1G NSVMMBD353LT1G MMBD353LT3G MMBD354LT1G NSVMMBD354LT1G MMBD355LT1G Marking Package Shipping† M5G SOT−23 (Pb−Free) 3,000 Units / Tape & Reel M5G SOT−23 (Pb−Free) 10,000 Units / Tape & Reel M4F SOT−23 (Pb−Free) 3,000 Units / Tape & Reel M4F SOT−23 (Pb−Free) 3,000 Units / Tape & Reel M4F SOT−23 (Pb−Free) 10,000 Units / Tape & Reel M6H SOT−23 (Pb−Free) 3,000 Units / Tape & Reel M6H SOT−23 (Pb−Free) 3,000 Units / Tape & Reel MJ1 SOT−23 (Pb−Free) 3,000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS 1.0 TA = 85C C, CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 10 TA = -40C 1.0 TA = 25C 0.1 0.9 0.8 0.7 0.6 0.3 0.4 0.5 0.6 0.7 0.8 0 1.0 2.0 3.0 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Forward Voltage Figure 2. Capacitance http://onsemi.com 2 4.0 MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 L1 VIEW C MMBD352LT1G STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE SOLDERING FOOTPRINT MMBD353LT1G NSVMMBD353LT1G STYLE 19: PIN 1. CATHODE 2. ANODE 3. CATHODE−ANODE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 0.95 0.037 0.95 0.037 MMBD354LT1G NSVMMBD354LT1G STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE MMBD355LT1G STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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