MMBD352LT1G, MMBD353LT1G, MMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes http://onsemi.com These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 1 SOT−23 (TO−236) CASE 318 2 Features • Very Low Capacitance − Less Than 1.0 pF @ Zero V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 ANODE 3 CATHODE/ANODE Compliant MMBD352LT1 STYLE 11 MAXIMUM RATINGS (EACH DIODE) Rating Continuous Reverse Voltage Symbol Value Unit VR 7.0 VCC Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 1 CATHODE 3 CATHODE/ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD RqJA PD 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1 ANODE 3 CATHODE 2 ANODE MMBD354LT1 STYLE 9 1 CATHODE ANODE 3 2 CATHODE MMBD355LT1 STYLE 12 MARKING DIAGRAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Forward Voltage (IF = 10 mAdc) VF − 0.60 V Reverse Leakage Current (Note 3) (VR = 3.0 V) (VR = 7.0 V) IR − − 0.25 10 Capacitance (VR = 0 V, f = 1.0 MHz) C − 1.0 mA pF Mxx M G G August, 2009 − Rev. 7 1 Mxx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. 3. For each individual diode while the second diode is unbiased. © Semiconductor Components Industries, LLC, 2009 2 ANODE MMBD353LT1 STYLE 19 (EACH DIODE) Rating 2 CATHODE 1 Publication Order Number: MMBD352LT1/D MMBD352LT1G, MMBD353LT1G, MMBD354LT1G, MMBD355LT1G TYPICAL CHARACTERISTICS 1.0 TA = 85°C C, CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 10 TA = -40°C 1.0 TA = 25°C 0.1 0.9 0.8 0.7 0.6 0.3 0.4 0.5 0.6 0.7 0.8 0 1.0 2.0 3.0 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Forward Voltage Figure 2. Capacitance 4.0 ORDERING INFORMATION Device Package Shipping† SOT−23 (Pb−Free) 3,000 Units / Tape & Reel SOT−23 (Pb−Free) 10,000 Units / Tape & Reel SOT−23 (Pb−Free) 3,000 Units / Tape & Reel SOT−23 (Pb−Free) 10,000 Units / Tape & Reel M6H SOT−23 (Pb−Free) 3,000 Units / Tape & Reel MJ1 SOT−23 (Pb−Free) 3,000 Units / Tape & Reel Marking MMBD352LT1G MMBD352LT3G M5G MMBD353LT1G MMBD353LT3G MMBD354LT1G MMBD355LT1G M4F †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MMBD352LT1G, MMBD353LT1G, MMBD354LT1G, MMBD355LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 L1 VIEW C MMBD352LT1 STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE MMBD353LT1 SOLDERING FOOTPRINT* STYLE 19: PIN 1. CATHODE 2. ANODE 3. CATHODE−ANODE 0.95 0.037 0.95 0.037 MMBD354LT1 STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE MMBD355LT1 2.0 0.079 STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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