PD - 95147
IRFZ24NS/LPbF
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Advanced Process Technology
Surface Mount (IRFZ24NS)
Low-profile through-hole (IRFZ24NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.07Ω
G
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ24NL) is available for lowprofile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
17
12
68
3.8
45
0.30
± 20
71
10
4.5
6.8
-55 to + 175
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
3.3
40
°C/W
04/19/04
IRFZ24NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
4.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
IDSS
IGSS
Drain-to-Source Leakage Current
Typ.
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.9
34
19
27
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID =1mA
0.07
Ω
VGS =10V, ID = 10A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 10A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
20
ID = 10A
5.3
nC
VDS = 44V
7.6
VGS = 10V, See Fig. 6 and 13
–––
VDD = 28V
–––
ID = 10A
ns
–––
RG = 24Ω
–––
RD = 2.6Ω, See Fig. 10
Between lead,
nH
7.5 –––
and center of die contact
370 –––
VGS = 0V
140 –––
pF
VDS = 25V
65 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– –––
17
showing the
A
G
integral reverse
––– –––
68
p-n junction diode.
S
––– ––– 1.3
V
TJ = 25°C, IS = 10A, VGS = 0V
––– 56
83
ns
TJ = 25°C, IF = 10A
––– 120 180
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L =1.0mH
RG = 25Ω, IAS = 10A. (See Figure 12)
Pulse width ≤ 280µs; duty cycle ≤ 2%.
Uses IRFZ24N data and test conditions
ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFZ24NS/LPbF
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , D rain-to-S ource C urrent (A )
D
I , D rain-to-Source Current (A )
D
TOP
10
4.5V
20 µ s P U LS E W ID TH
T
TCJ == 25°C
2 5°C
1
0.1
1
10
100
10
4 .5V
2 0µ s P U L S E W ID T H
TTCJ == 175°C
17 5°C
1
A
0.1
Fig 1. Typical Output Characteristics
R D S (on ) , D rain -to-S ou rc e O n R es is tan c e
(N orm a liz ed)
I D , D rain-to-So urce C urren t (A )
3.0
TJ = 2 5 °C
T J = 1 7 5 °C
10
V DS = 2 5V
2 0µ s P U L S E W ID TH
5
6
7
8
9
V G S , G ate-to -So urce Voltag e (V)
Fig 3. Typical Transfer Characteristics
100
A
Fig 2. Typical Output Characteristics
100
4
10
V DS , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ourc e V oltage (V )
1
1
10
A
I D = 17 A
2.5
2.0
1.5
1.0
0.5
V G S = 1 0V
0.0
-60
-40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , J unc tion T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFZ24NS/LPbF
V GS
C is s
C rs s
C o ss
C , Capacitance (pF)
600
500
C iss
400
C oss
=
=
=
=
20
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
V G S , G ate-to-S ource V oltage (V )
700
V D S = 44 V
V D S = 28 V
16
12
300
200
I D = 10 A
C rss
100
0
1
10
100
8
4
FO R TE S T C IRC UIT
S E E FIG U R E 1 3
0
A
0
V D S , D rain-to-S ourc e V oltage (V )
8
12
16
20
A
Q G , T otal G ate C harge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
I D , D rain Current (A )
I S D , R everse Drain C urrent (A )
4
T J = 1 75 °C
TJ = 25 °C
10
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.0
100
10µ s
10
100µ s
1m s
T C = 25 °C
T J = 17 5°C
S ing le P u lse
1
1
10m s
10
100
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
A
IRFZ24NS/LPbF
RD
V DS
20
VGS
D.U.T.
RG
+
-V DD
16
I D , Drain Current (A)
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
12
Fig 10a. Switching Time Test Circuit
8
VDS
90%
4
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRFZ24NS/LPbF
L
VDS
D.U.T.
RG
+
-
VDD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S ingle Pulse Avalanc he E nergy (m J)
140
ID
4.2 A
7.2A
1 0A
TOP
120
B O T TO M
100
80
60
40
20
0
V D D = 25 V
25
50
75
100
125
A
150
175
S tarting T J , J unc tion T em perature (°C )
VDS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFZ24NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
V DD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFZ24NS/LPbF
D2Pak Package Outline
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
L OT CODE 8024
AS S E MB L E D ON WW 0 2, 2000
IN T H E AS S E MB L Y L INE "L "
IN T E R N AT IONAL
R E CT IF IE R
L OGO
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
P AR T N U MB E R
F 53 0S
AS S E MB L Y
L OT CODE
OR
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
P AR T NU MB E R
F 530S
DAT E CODE
P = DE S IGNAT E S L E AD-F R E E
P R ODU CT (OP T IONAL )
YE AR 0 = 2000
WE E K 02
A = AS S E MB L Y S IT E CODE
DAT E CODE
YE AR 0 = 2000
WE E K 02
L INE L
IRFZ24NS/LPbF
TO-262 Package Outline
TO-262 Part Marking Information
E X AM P L E :
T H IS IS AN IR L 3103 L
L OT COD E 178 9
AS S E MB L E D ON W W 19 , 199 7
IN T H E AS S E MB L Y L IN E "C"
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
IN T E R N AT ION AL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT COD E
P AR T N U MB E R
D AT E COD E
YE AR 7 = 19 97
WE E K 19
L IN E C
OR
IN T E R N AT ION AL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT COD E
P AR T N U MB E R
D AT E COD E
P = D E S IGN AT E S L E AD -F R E E
P R OD U CT (OP T ION AL )
YE AR 7 = 19 97
WE E K 19
A = AS S E MB L Y S IT E COD E
IRFZ24NS/LPbF
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 1.6 0 (.4 57 )
1 1.4 0 (.4 49 )
1 .6 5 (.0 6 5 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5.4 2 (.6 0 9 )
1 5.2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TR L
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
1 0.9 0 (.4 2 9 )
1 0.7 0 (.4 2 1 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6 .1 0 ( .6 3 4 )
1 5 .9 0 ( .6 2 6 )
F E E D D IRE CTIO N
13 .5 0 (.53 2)
12 .8 0 (.50 4)
27 .40 (1.0 79)
23 .90 (.94 1)
4
3 30 .0 0
(14.1 73)
MAX.
60.00 (2.3 62)
M IN .
NO TES :
1. C O M F O R M S T O E IA-4 18.
2. C O N TR O LL IN G D IM E N S IO N : M IL LIM E T E R .
3. D IM E N S IO N M E A SU R E D @ H U B .
4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U TE R E D G E.
26 .40 (1 .03 9)
24 .40 (.9 61 )
3
30 .40 (1.19 7)
MAX.
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/