MURH860CTG Power Rectifier These state-of-the-art power rectifiers are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • • • • • • Ultrafast 35 Nanosecond Recovery Times 175°C Operating Junction Temperature Popular TO-220 Package Epoxy Meets UL 94 V−0 @ 0.125 in High Temperature Glass Passivated Junction High Voltage Capability to 600 V Low Leakage Specified @ 150°C Case Temperature Current Derating @ Both Case and Ambient Temperatures These are Pb−Free Devices* www.onsemi.com ULTRAFAST RECTIFIER 8.0 AMPERES, 600 VOLTS 1 2, 4 3 Mechanical Characteristics: 4 • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: TO−220AB CASE 221A 260°C Max. for 10 Seconds 1 2 MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TC = 120°C) Total Device IF(AV) 4.0 8.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 120°C) IFM 16 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A TJ, Tstg −65 to +175 °C Rating Symbol Value Unit Max. Thermal Resistance, Junction−to−Case RqJC 3.0 °C/W Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS (Per Leg) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3 MARKING DIAGRAM AY WW UH860G AKA A Y WW UH860 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device Package Shipping MURH860CTG TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 6 1 Publication Order Number: MURH860CT/D MURH860CTG ELECTRICAL CHARACTERISTICS (Per Leg) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (iF = 4.0 A, TC = 150°C) (iF = 4.0 A, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TC = 150°C) (Rated DC Voltage, TC = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) trr Value Unit V 2.5 2.8 mA 500 10 35 ns 100 50 20 TJ = 150°C 10 7 5 3 2 I R , REVERSE LEAKAGE CURRENT (μA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% 85°C 25°C 1 0.7 0.5 0.3 0.2 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 v F , INSTANTANEOUS VOLTAGE (VOLTS) 4.5 5 5 0.2 0.1 0.05 0.02 0.01 I F(AV) , AVERAGE FORWARD CURRENT (AMPS) PF(AV), AVERAGE POWER DISSIPATION (WATTS) 36 TJ = 150°C 28 24 SQUARE WAVE 16 DC 12 8 4 0 1 2 3 4 5 6 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 25°C 0.5 0 50 100 200 300 400 500 VR, REVERSE VOLTAGE (VOLTS) 600 Figure 2. Typical Reverse Leakage Current, Per Leg 40 20 100°C 2 1 Figure 1. Typical Forward Voltage, Per Leg 32 150°C 50 20 10 7 10 RATED VOLTAGE APPLIED RqJC = 3°C/W 9 8 7 6 5 SQUARE DC 4 3 2 1 0 40 60 80 100 120 140 TC, CASE TEMPERATURE (°C) 160 180 Figure 4. Typical Current Derating, Case, Per Leg Figure 3. Typical Forward Dissipation, Per Leg www.onsemi.com 2 MURH860CTG 32 28 28 Trr 24 24 20 20 Qrr 16 16 12 12 Vr = 30 V di/dt = 50 A/ms 8 8 4 0 4 0 1 2 3 4 5 6 7 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 8 C, CAPACITANCE (pF) Figure 5. Typical Recovery Characteristics 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance, Per Leg www.onsemi.com 3 100 0 Qrr , RECOVERED STORED CHARGE (nC) Trr, REVERSE RECOVERY TIME (ns) 32 MURH860CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MURH860CT/D