Silicon Tuning Diode

MMVL2105T1
Preferred Device
Silicon Tuning Diode
These devices are designed in the popular Plastic Surface Mount
Package for high volume requirements of FM Radio and TV tuning
and AFC, general frequency control and tuning applications. They
provide solid−state reliability in replacement of mechanical tuning
methods.
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Features
•
•
•
•
•
30 VOLT VOLTAGE VARIABLE
CAPACITANCE DIODE
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance − 10%
Complete Typical Design Curves
Pb−Free Package is Available
1
CATHODE
2
ANODE
2
MAXIMUM RATINGS
Symbol
Value
Unit
Continuous Reverse Voltage
Rating
VR
30
Vdc
Peak Forward Current
IF
200
mAdc
Symbol
Max
Unit
200
1.57
mW
mW/°C
RqJA
635
°C/W
TJ, Tstg
150
°C
1
PLASTIC
SOD−323
CASE 477
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
TA = 25°C (Note 1)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 Minimum Pad
4U M G
G
4U = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMVL2105T1
SOD−323 3000 / Tape & Reel
MMVL2105T1G
SOD−323 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 1
1
Publication Order Number:
MMVL2105T1/D
MMVL2105T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10 mAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Device
MMVL2105T1
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
Vdc
IR
−
−
0.1
mAdc
TCC
−
280
−
ppm/°C
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Min
Nom
Max
Typ
Min
Typ
Max
13.5
15
16.5
400
2.5
2.9
3.2
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
(CT = CC + CJ). CT is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
TCC is guaranteed by comparing CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = −65°C with CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = +85°C in the following equation,
which defines TCC:
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
TCC +
3. Q, FIGURE OF MERIT
– CT(–65°C)
6
ŤCT() 85°C)
Ť · C 10(25°C)
85 ) 65
T
Accuracy limited by measurement of CT to ±0.1 pF.
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and
substituting in the following equations:
Q + 2pfC
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length [ 1/16”.
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2
MMVL2105T1
TYPICAL DEVICE CHARACTERISTICS
1000
C T , DIODE CAPACITANCE (pF)
500
TA = 25°C
f = 1.0 MHz
200
100
50
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
2.0
5.0
3.0
20
10
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
100
50
VR = 2.0 Vdc
1.030
I R , REVERSE CURRENT (nA)
NORMALIZED DIODE CAPACITANCE
1.040
1.020
VR = 4.0 Vdc
1.010
1.000
VR = 30 Vdc
0.990
NORMALIZED TO CT
at TA = 25°C
VR = (CURVE)
0.980
0.970
0.960
−75
−50
−25
0
+25
+50
+75
TJ, JUNCTION TEMPERATURE (°C)
TA = 125°C
20
10
5.0
2.0
1.0
0.50
TA = 75°C
0.20
0.10
TA = 25°C
0.05
+100
0.02
0.01
+125
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
25
30
1000
Q, FIGURE OF MERIT
1000
100
TA = 25°C
f = 50 MHz
100
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current versus Reverse Bias
Voltage
10,000
Q, FIGURE OF MERIT
5.0
0
0.1
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
TA = 25°C
VR = 4.0 Vdc
10
100
10
Figure 4. Figure of Merit versus Reverse Voltage
100
f, FREQUENCY (MHz)
Figure 5. Figure of Merit versus Frequency
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3
1000
MMVL2105T1
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MMVL2105T1/D