MMVL2105T1 Preferred Device Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state reliability in replacement of mechanical tuning methods. http://onsemi.com Features • • • • • 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance − 10% Complete Typical Design Curves Pb−Free Package is Available 1 CATHODE 2 ANODE 2 MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 30 Vdc Peak Forward Current IF 200 mAdc Symbol Max Unit 200 1.57 mW mW/°C RqJA 635 °C/W TJ, Tstg 150 °C 1 PLASTIC SOD−323 CASE 477 STYLE 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 Minimum Pad 4U M G G 4U = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMVL2105T1 SOD−323 3000 / Tape & Reel MMVL2105T1G SOD−323 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 1 1 Publication Order Number: MMVL2105T1/D MMVL2105T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MMVL2105T1 Symbol Min Typ Max Unit V(BR)R 30 − − Vdc IR − − 0.1 mAdc TCC − 280 − ppm/°C Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz TR, Tuning Ratio C2/C30 f = 1.0 MHz Min Nom Max Typ Min Typ Max 13.5 15 16.5 400 2.5 2.9 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85°C in the following equation, which defines TCC: 2. TR, TUNING RATIO TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. TCC + 3. Q, FIGURE OF MERIT – CT(–65°C) 6 ŤCT() 85°C) Ť · C 10(25°C) 85 ) 65 T Accuracy limited by measurement of CT to ±0.1 pF. Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q + 2pfC G (Boonton Electronics Model 33AS8 or equivalent). Use Lead Length [ 1/16”. http://onsemi.com 2 MMVL2105T1 TYPICAL DEVICE CHARACTERISTICS 1000 C T , DIODE CAPACITANCE (pF) 500 TA = 25°C f = 1.0 MHz 200 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 5.0 3.0 20 10 30 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance versus Reverse Voltage 100 50 VR = 2.0 Vdc 1.030 I R , REVERSE CURRENT (nA) NORMALIZED DIODE CAPACITANCE 1.040 1.020 VR = 4.0 Vdc 1.010 1.000 VR = 30 Vdc 0.990 NORMALIZED TO CT at TA = 25°C VR = (CURVE) 0.980 0.970 0.960 −75 −50 −25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (°C) TA = 125°C 20 10 5.0 2.0 1.0 0.50 TA = 75°C 0.20 0.10 TA = 25°C 0.05 +100 0.02 0.01 +125 Figure 2. Normalized Diode Capacitance versus Junction Temperature 25 30 1000 Q, FIGURE OF MERIT 1000 100 TA = 25°C f = 50 MHz 100 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Reverse Current versus Reverse Bias Voltage 10,000 Q, FIGURE OF MERIT 5.0 0 0.1 10 1.0 VR, REVERSE VOLTAGE (VOLTS) TA = 25°C VR = 4.0 Vdc 10 100 10 Figure 4. Figure of Merit versus Reverse Voltage 100 f, FREQUENCY (MHz) Figure 5. Figure of Merit versus Frequency http://onsemi.com 3 1000 MMVL2105T1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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