MMVL2101T1 Preferred Device Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. • High Q • Controlled and Uniform Tuning Ratio • Standard Capacitance Tolerance – 10% • Complete Typical Design Curves • Device Marking: 4G http://onsemi.com 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE 1 MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 30 Vdc IF Peak Forward Current 200 mAdc Max Unit 2 PLASTIC SOD–323 CASE 477 THERMAL CHARACTERISTICS Symbol PD RJA TJ, Tstg Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C 200 mW 1.57 mW/°C Thermal Resistance Junction to Ambient 635 °C/W Junction and Storage Temperature 150 °C 1 CATHODE *FR–4 Minimum Pad 2 ANODE ORDERING INFORMATION Device Package Shipping MMVL2101T1 SOD–323 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2000 – Rev. 1 1 Publication Order Number: MMVL2101T1/D MMVL2101T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Symbol Min Typ Max Unit V(BR)R 30 — — Vdc IR — — 0.1 µAdc TCC — 280 — ppm/°C Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MMVL2101T1 Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz TR, Tuning Ratio C2/C30 f = 1.0 MHz Min Nom Max Typ Min Typ Max 6.1 6.8 7.5 450 2.5 2.7 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = –65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85°C in the following equation, which defines TCC: 2. TR, TUNING RATIO TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. TCC 3. Q, FIGURE OF MERIT – CT(–65°C) 6 CT( 85°C) · C 10(25°C) 85 65 T Accuracy limited by measurement of CT to ±0.1 pF. Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q 2fC G (Boonton Electronics Model 33AS8 or equivalent). Use Lead Length 1/16”. http://onsemi.com 2 MMVL2101T1 TYPICAL DEVICE CHARACTERISTICS 1000 C T , DIODE CAPACITANCE (pF) 500 TA = 25°C f = 1.0 MHz 200 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 5.0 3.0 2.0 20 10 30 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance versus Reverse Voltage 100 50 VR = 2.0 Vdc 1.030 I R , REVERSE CURRENT (nA) NORMALIZED DIODE CAPACITANCE 1.040 1.020 VR = 4.0 Vdc 1.010 1.000 VR = 30 Vdc 0.990 NORMALIZED TO CT at TA = 25°C VR = (CURVE) 0.980 0.970 0.960 -75 -50 -25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (°C) TA = 125°C 20 10 5.0 2.0 1.0 0.50 TA = 75°C 0.20 0.10 TA = 25°C 0.05 +100 0.02 0.01 +125 1000 1000 Q, FIGURE OF MERIT Q, FIGURE OF MERIT 5000 3000 2000 500 300 200 100 TA = 25°C f = 50 MHz 2.0 10 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) 15 20 25 30 Figure 3. Reverse Current versus Reverse Bias Voltage 5000 3000 2000 10 1.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Normalized Diode Capacitance versus Junction Temperature 50 30 20 5.0 0 20 500 300 200 100 50 30 20 10 10 30 Figure 4. Figure of Merit versus Reverse Voltage TA = 25°C VR = 4.0 Vdc 20 100 30 50 70 f, FREQUENCY (MHz) 200 Figure 5. Figure of Merit versus Frequency http://onsemi.com 3 250 MMVL2101T1 PACKAGE DIMENSIONS SOD–323 PLASTIC PACKAGE CASE 477–02 ISSUE A K A D 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. B DIM A B C D E H J K E C J MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE H NOTE 3 0.63mm 0.025 1.60mm 0.063 2.85mm 0.112 0.83mm 0.033 mm inches SOD–323 Soldering Footprint Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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