ONSEMI MMVL2101T1

MMVL2101T1
Preferred Device
Silicon Tuning Diode
These devices are designed in the popular Plastic Surface Mount
Package for high volume requirements of FM Radio and TV tuning
and AFC, general frequency control and tuning applications.They
provide solid–state reliability in replacement of mechanical tuning
methods.
• High Q
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance – 10%
• Complete Typical Design Curves
• Device Marking: 4G
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30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODE
1
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR
Continuous Reverse Voltage
30
Vdc
IF
Peak Forward Current
200
mAdc
Max
Unit
2
PLASTIC
SOD–323
CASE 477
THERMAL CHARACTERISTICS
Symbol
PD
RJA
TJ, Tstg
Characteristic
Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
200
mW
1.57
mW/°C
Thermal Resistance Junction to Ambient
635
°C/W
Junction and Storage Temperature
150
°C
1
CATHODE
*FR–4 Minimum Pad
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
MMVL2101T1
SOD–323
3000 / Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2001
January, 2000 – Rev. 1
1
Publication Order Number:
MMVL2101T1/D
MMVL2101T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10 µAdc)
Symbol
Min
Typ
Max
Unit
V(BR)R
30
—
—
Vdc
IR
—
—
0.1
µAdc
TCC
—
280
—
ppm/°C
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Device
MMVL2101T1
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Min
Nom
Max
Typ
Min
Typ
Max
6.1
6.8
7.5
450
2.5
2.7
3.2
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
(CT = CC + CJ). CT is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
TCC is guaranteed by comparing CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = –65°C with CT at VR = 4.0 Vdc, f =
1.0 MHz, TA = +85°C in the following equation, which
defines TCC:
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
TCC 3. Q, FIGURE OF MERIT
– CT(–65°C)
6
CT( 85°C)
· C 10(25°C)
85 65
T
Accuracy limited by measurement of CT to ±0.1 pF.
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and
substituting in the following equations:
Q 2fC
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length 1/16”.
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2
MMVL2101T1
TYPICAL DEVICE CHARACTERISTICS
1000
C T , DIODE CAPACITANCE (pF)
500
TA = 25°C
f = 1.0 MHz
200
100
50
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
5.0
3.0
2.0
20
10
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
100
50
VR = 2.0 Vdc
1.030
I R , REVERSE CURRENT (nA)
NORMALIZED DIODE CAPACITANCE
1.040
1.020
VR = 4.0 Vdc
1.010
1.000
VR = 30 Vdc
0.990
NORMALIZED TO CT
at TA = 25°C
VR = (CURVE)
0.980
0.970
0.960
-75
-50
-25
0
+25
+50
+75
TJ, JUNCTION TEMPERATURE (°C)
TA = 125°C
20
10
5.0
2.0
1.0
0.50
TA = 75°C
0.20
0.10
TA = 25°C
0.05
+100
0.02
0.01
+125
1000
1000
Q, FIGURE OF MERIT
Q, FIGURE OF MERIT
5000
3000
2000
500
300
200
100
TA = 25°C
f = 50 MHz
2.0
10
3.0
5.0
7.0
VR, REVERSE VOLTAGE (VOLTS)
15
20
25
30
Figure 3. Reverse Current versus Reverse Bias
Voltage
5000
3000
2000
10
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
50
30
20
5.0
0
20
500
300
200
100
50
30
20
10
10
30
Figure 4. Figure of Merit versus Reverse Voltage
TA = 25°C
VR = 4.0 Vdc
20
100
30
50
70
f, FREQUENCY (MHz)
200
Figure 5. Figure of Merit versus Frequency
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3
250
MMVL2101T1
PACKAGE DIMENSIONS
SOD–323
PLASTIC PACKAGE
CASE 477–02
ISSUE A
K
A
D
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
B
DIM
A
B
C
D
E
H
J
K
E
C
J
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.60
1.80 0.063
0.071
1.15
1.35 0.045
0.053
0.80
1.00 0.031
0.039
0.25
0.40 0.010
0.016
0.15 REF
0.006 REF
0.00
0.10 0.000
0.004
0.089
0.177 0.0035 0.0070
2.30
2.70 0.091
0.106
STYLE 1:
PIN 1. CATHODE
2. ANODE
H
NOTE 3
0.63mm
0.025
1.60mm
0.063
2.85mm
0.112
0.83mm
0.033
mm inches
SOD–323
Soldering Footprint
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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4
MMVL2101T1/D