MMBV432LT1 Preferred Device Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top−of−the−line application requiring back−to−back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT−23 plastic package for high volume, pick and place assembly requirements. http://onsemi.com Features • • • • • • • High Figure of Merit − Q = 150 (Typ) @ VR = 2.0 Vdc, f = 100 MHz Guaranteed Capacitance Range Dual Diodes − Save Space and Reduce Cost Surface Mount Package Available in 8 mm Tape and Reel Monolithic Chip Provides Improved Matching − Guaranteed ±1.0% (Max) Over Specified Tuning Range Pb−Free Package is Available DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 1 2 3 3 MAXIMUM RATINGS (Each Diode) Rating 1 Symbol Value Unit Reverse Voltage VR 14 Vdc Forward Current IF 200 mAdc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Junction Temperature TJ +125 °C Storage Temperature Range Tstg −55 to +125 °C 2 SOT−23 (TO−236) CASE 318 STYLE 9 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. M4B M G G 1 M4B = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBV432LT1 SOT−23 3,000 / Tape & Reel MMBV432LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 4 1 Publication Order Number: MMBV432LT1/D MMBV432LT1 ELECTRICAL CHARACTERISTICS (EACH DIODE) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 14 − − Vdc Reverse Voltage Leakage Current (VR = 9.0 Vdc) IR − − 100 nAdc Diode Capacitance (VR = 2.0 Vdc, f = 1.0 MHz) CT 43 − 48.1 pF Capacitance Ratio C2/C8 (f = 1.0 MHz) CR 1.5 − 2.0 − Figure of Merit (VR = 2.0 Vdc, f = 100 MHz) Q 100 150 − − Reverse Breakdown Voltage (IR = 10 mAdc) http://onsemi.com 2 MMBV432LT1 TYPICAL CHARACTERISTICS (Each Diode) 550 70 Q, FIGURE OF MERIT CT , DIODE CAPACITANCE (pF) 100 50 30 f = 1.0 MHz TA = 25°C 20 350 250 TA = 25°C f = 100 MHz 150 10 2 1 3 5 7 50 10 4 6 10 8 Figure 1. Diode Capacitance Figure 2. Figure of Merit versus Voltage CT , DIODE CAPACITANCE (NORMALIZED) VR = 2.0 Vdc TA = 25°C 500 200 100 50 20 2 VR, REVERSE VOLTAGE (VOLTS) 1000 30 50 70 100 1.06 1.04 VR = 2.0 Vdc 1.02 VR = 4.0 Vdc 1.00 0.98 f = 1.0 MHz 0.96 −75 200 300 −50 −25 0 +25 +50 +75 +100 +125 f, FREQUENCY (MHz) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Figure of Merit versus Frequency Figure 4. Diode Capacitance versus Temperature 10 TA = 125°C 5 I R , REVERSE CURRENT (nA) 20 10 0 VR, REVERSE VOLTAGE (VOLTS) 2000 Q, FIGURE OF MERIT 450 2 1 0.5 TA = 75°C 0.2 0.1 0.05 TA = 25°C 0.02 0.01 0 2 4 6 8 10 12 14 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Reverse Current versus Reverse Voltage http://onsemi.com 3 MMBV432LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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