MMBV105GLT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com • Controlled and Uniform Tuning Ratio • Pb−Free Package is Available 3 Cathode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit VR 30 Vdc Forward Current IF 200 mAdc Device Dissipation @ TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Junction Temperature TJ +125 °C Storage Temperature Range Tstg −55 to +150 °C Reverse Voltage 1 Anode 3 1 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. SOT−23 (TO−236) CASE 318 STYLE 8 MARKING DIAGRAM M4EM G G 1 M4E = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBV105GLT1 MMBV105GLT1G Package Shipping † SOT−23 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 4 1 Publication Order Number: MMBV105GLT1/D MMBV105GLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)R 30 − Vdc IR − 50 nAdc Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 28 Vdc) CT VR = 25 Vdc, f = 1.0 MHz pF Device Type MMBV105GLT1 Q VR = 3.0 Vdc f = 50 MHz CR C3/C25 f = 1.0 MHz Min Max Typ Min Max 1.5 2.8 250 4.0 6.5 TYPICAL CHARACTERISTICS 20 1000 Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 f = 1.0 MHz TA = 25°C 4.0 VR = 3 Vdc TA = 25°C 100 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 10 20 30 10 100 VR, REVERSE VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT , DIODE CAPACITANCE (NORMALIZED) CT , DIODE CAPACITANCE (pF) 18 1.04 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 −75 −50 −25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance http://onsemi.com 2 +100 +125 1000 MMBV105GLT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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