IR MOSFET StrongIRFET™ IRL60S216 IRL60SL216 HEXFET® Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters VDSS 60V RDS(on) typ. 1.6m max 1.95m D G ID (Silicon Limited) 298A ID (Package Limited) 195A S D D S Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free* RoHS Compliant, Halogen-Free Base part number Package Type IRL60SL216 TO-262 S D TO-262 IRL60SL216 D Drain S Source Orderable Part Number IRL60SL216 IRL60S216 315 6 Limited By Package ID = 100A 270 5 4 TJ = 125°C 3 2 TJ = 25°C 1 225 180 135 90 45 0 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 G Gate ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m) D -Pak G D2Pak IRL60S216 Standard Pack Form Quantity Tube 50 Tape and Reel 800 2 IRL60S216 G 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature 2016-1-19 IRL60S/SL216 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Max. 298 210 195 780 375 2.5 ± 20 -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics EAS (Thermally limited) 530 Single Pulse Avalanche Energy 1045 EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current See Fig 15, 16, 23a, 23b Repetitive Avalanche Energy EAR Thermal Resistance Symbol Parameter Typ. Max. Junction-to-Case RJC ––– 0.4 Case-to-Sink, Flat Greased Surface RCS 0.50 ––– RJA Junction-to-Ambient ––– 62 TSTG Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Min. Typ. Max. 60 ––– ––– ––– 0.040 ––– ––– 1.6 1.95 ––– 1.8 2.2 1.0 ––– 2.4 ––– ––– 1.0 ––– ––– 150 ––– ––– 100 ––– ––– -100 ––– 2.0 ––– Units A W W/°C V °C mJ A mJ Units °C/W Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 2mA VGS = 10V, ID = 100A m VGS = 4.5V, ID = 50A V VDS = VGS, ID = 250µA VDS = 60 V, VGS = 0V µA VDS = 60V,VGS = 0V,TJ =125°C VGS = 20V nA VGS = -20V Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that Current imitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.107mH, RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 1100A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 46A, VGS =10V. Pulse drain current is limited to 780A by source bonding technology. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 2 2016-1-19 IRL60S/SL216 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Min. 229 ––– ––– ––– ––– ––– ––– Typ. ––– 170 53 80 90 70 180 Max. Units Conditions ––– S VDS = 10V, ID = 100A 255 ID = 100A VDS = 30V ––– nC VGS = 4.5V ––– ––– ––– VDD = 30V ––– ID = 30A ns ––– RG= 2.7 VGS = 4.5V ––– td(off) Turn-Off Delay Time ––– 190 tf Ciss Coss Fall Time Input Capacitance Output Capacitance ––– ––– ––– 120 15330 1260 Crss Reverse Transfer Capacitance ––– 890 ––– Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 1260 ––– VGS = 0V, VDS = 0V to 48V Coss eff.(TR) Output Capacitance (Time Related) ––– 1640 ––– VGS = 0V, VDS = 0V to 48V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 298 ––– ––– 780 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 dv/dt Peak Diode Recovery dv/dt ––– 9.5 ––– trr Reverse Recovery Time ––– 52 ––– Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– 54 87 97 2.9 ––– ––– ––– ––– ––– ––– VGS = 0V VDS = 25V pF ƒ = 1.0MHz, See Fig.7 Diode Characteristics Symbol IS ISM 3 A V D G S TJ = 25°C,IS =100A,VGS = 0V V/ns TJ = 175°C,IS = 100A,VDS = 60V ns TJ = 25°C VDD = 51V TJ = 125°C IF = 100A, TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C 2016-1-19 IRL60S/SL216 1000 BOTTOM V 1000 VGS 15V 10V 8.0V 6.0V 4.5V 4.0V 3.5V 3.25 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 3.25V 100 BOTTOM V VGS 15V 10V 8.0V 6.0V 4.5V 4.0V 3.5V 3.25 100 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 25°C Tj = 175°C 10 0.1 1 10 10 100 0.1 VDS, Drain-to-Source Voltage (V) 100 2.2 R DS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 4. Typical Output Characteristics 1000 100 TJ = 175°C TJ = 25°C 10 1 VDS = 25V 60µs PULSE WIDTH 0.1 ID = 100A VGS = 10V 1.8 1.4 1.0 0.6 0 2 4 6 -60 60 100 140 180 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 100000 20 Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 1000000 -20 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 VDS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Ciss 10000 Coss Crss 1000 100 ID= 100A 12 VDS = 48V VDS = 30V VDS= 12V 10 8 6 4 2 0 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 3.25V 0 50 100 150 200 250 300 350 400 450 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage 2016-1-19 IRL60S/SL216 100 TJ = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100µsec 100 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 DC 0.1 2.5 0.1 VSD , Source-to-Drain Voltage (V) 1 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 74 2.0 Id = 2.0mA 1.8 72 1.6 70 1.4 1.2 Energy (µJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V) 1msec Limited by Package 68 66 1.0 0.8 0.6 64 0.4 62 0.2 60 0.0 -60 -20 20 60 100 140 180 -10 TJ , Temperature ( °C ) 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage RDS (on), Drain-to -Source On Resistance (m ) 0 Fig 12. Typical Coss Stored Energy 4.0 VGS = 3.5V VGS = 4.0V VGS = 4.5V VGS = 5.5V VGS = 6.0V VGS = 8.0V VGS = 10V 3.5 3.0 2.5 2.0 1.5 1.0 0 50 100 150 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 2016-1-19 IRL60S/SL216 Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart = 25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 600 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 100A 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 2016-1-19 IRL60S/SL216 20 2.5 IF = 60A VR = 51V 16 TJ = 25°C TJ = 125°C 2.0 IRRM (A) VGS(th), Gate threshold Voltage (V) 3.0 1.5 1.0 ID = 250µA ID = 1.0mA ID = 1.0A 0.5 12 8 4 0.0 0 -75 -25 25 75 125 175 0 200 TJ , Temperature ( °C ) 600 800 1000 diF /dt (A/µs) Fig 18. Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 20 400 16 IF = 100A VR = 51V 350 TJ = 25°C TJ = 125°C IF = 60A VR = 51V 300 TJ = 25°C TJ = 125°C 12 QRR (nC) IRRM (A) 400 8 250 200 150 4 100 0 0 200 400 600 800 50 1000 0 200 diF /dt (A/µs) 400 600 800 1000 diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt QRR (nC) 400 350 IF = 100A VR = 51V 300 TJ = 25°C TJ = 125°C 250 200 150 100 50 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 2016-1-19 IRL60S/SL216 Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 Qgd Qgodr Fig 25b. Gate Charge Waveform 2016-1-19 IRL60S/SL216 D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L ASSEMBLY LOT CODE OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2016-1-19 IRL60S/SL216 TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW19, 1997 IN THE ASSEMBLYLINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLYSITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2016-1-19 IRL60S/SL216 D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 2016-1-19 IRL60S/SL216 Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level Moisture Sensitivity Level D2Pak MSL1 TO-262 (per JEDEC J-STD-020D††) RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 12 2016-1-19