StrongIRFET™ IRFB7540PbF IRFS7540PbF IRFSL7540PbF HEXFET® Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters VDSS 60V RDS(on) typ. 4.2m max 5.1m D G S ID 110A D D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant S D G S G TO-220AB IRFB7540PbF Package Type IRFB7540PbF IRFSL7540PbF TO-220 TO-262 D2-Pak Orderable Part Number IRFB7540PbF IRFSL7540PbF IRFS7540PbF IRFS7540TRLPbF ID = 65A 100 12 10 T J = 125°C 8 6 80 60 40 20 4 T J = 25°C 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 S Source 120 14 ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) IRFS7540PbF D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tube 50 Tape and Reel Left 800 S D TO-262 IRFSL7540PbF D2Pak IRFS7540PbF G Gate Base part number G www.irf.com © 2014 International Rectifier 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 6, 2014 IRFB/S/SL7540PbF Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Parameter Max. Continuous Drain Current, VGS @ 10V 110 Continuous Drain Current, VGS @ 10V 80 Pulsed Drain Current 430 Maximum Power Dissipation 160 Linear Derating Factor 1.1 VGS Gate-to-Source Voltage ± 20 TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Avalanche Characteristics 180 EAS (Thermally limited) Single Pulse Avalanche Energy 313 EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current See Fig 15, 16, 23a, 23b Repetitive Avalanche Energy EAR Thermal Resistance Symbol Parameter Typ. Max. Junction-to-Case RJC ––– 0.95 Case-to-Sink, Flat Greased Surface (TO-220) RCS 0.50 ––– Junction-to-Ambient (TO-220) RJA ––– 62 Junction-to-Ambient (PCB Mount) (D2Pak) RJA ––– 40 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Min. 60 ––– ––– ––– 2.1 ––– ––– ––– ––– ––– Units A W W/°C V °C mJ A mJ Units °C/W Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 48 ––– mV/°C Reference to 25°C, ID = 1mA 4.2 5.1 m VGS = 10V, ID = 65A 5.4 ––– VGS = 6.0V, ID = 33A ––– 3.7 V VDS = VGS, ID = 100µA ––– 1.0 VDS = 60V, VGS = 0V µA ––– 150 VDS = 60V,VGS = 0V,TJ =125°C ––– 100 VGS = 20V nA ––– -100 VGS = -20V 2.2 ––– Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 86µH, RG = 50, IAS = 65A, VGS =10V. ISD 65A, di/dt 1130A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 25A, VGS =10V. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFB/S/SL7540PbF Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg – Qgd) Turn-On Delay Time Rise Time Min. 110 ––– ––– ––– ––– ––– ––– Typ. ––– 88 22 28 60 12 76 td(off) Turn-Off Delay Time ––– 58 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– ––– ––– ––– 56 4555 415 270 ––– 430 ––– VGS = 0V, VDS = 0V to 48V ––– 550 ––– VGS = 0V, VDS = 0V to 48V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 110 ––– ––– 430 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– ––– 11 33 37 36 47 1.9 ––– ––– ––– ––– ––– ––– Coss eff.(ER) Coss eff.(TR) Max. Units Conditions ––– S VDS = 10V, ID = 65A 130 ID = 65A ––– VDS = 30V nC ––– VGS = 10V ––– ––– VDD = 30V ––– ID = 65A ns ––– RG= 2.7 VGS = 10V ––– ––– ––– ––– pF VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig.7 Diode Characteristics Symbol IS ISM 3 www.irf.com © 2014 International Rectifier A V D G S TJ = 25°C,IS = 65A,VGS = 0V V/ns TJ = 175°C,IS = 65A,VDS = 60V TJ = 25°C VDD = 51V ns TJ = 125°C IF = 65A, TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C Submit Datasheet Feedback November 6, 2014 IRFB/S/SL7540PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 10 4.5V 1 60µs PULSE WIDTH BOTTOM 4.5V 10 60µs PULSE WIDTH Tj = 25°C Tj = 175°C 0.1 1 0.1 1 10 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 10 100 1000 Fig 4. Typical Output Characteristics 2.4 100 TJ = 175°C 10 TJ = 25°C 1 V DS = 25V 60µs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics ID = 65A V GS = 10V 2.0 1.6 1.2 0.8 0.4 0.1 2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100120140160180 8.0 TJ , Junction Temperature (°C) V GS, Gate-to-Source Voltage (V) Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + Cgd, C ds SHORTED ID = 65A V GS, Gate-to-Source Voltage (V) C rss = C gd C oss = Cds + Cgd C, Capacitance (pF) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10000 Ciss Coss Crss 1000 12.0 V DS= 48V V DS= 30V 10.0 V DS= 12V 8.0 6.0 4.0 2.0 0.0 100 1 10 100 0 20 40 60 80 100 V DS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback 120 November 6, 2014 IRFB/S/SL7540PbF 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 175°C TJ = 25°C 10 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 1 DC 0.1 0.2 0.6 1.0 1.4 1.8 0.1 V SD, Source-to-Drain Voltage (V) 1 10 VDS, Drain-to-Source Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 0.8 78 Id = 1.0mA 0.7 76 0.6 74 Energy (µJ) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 10msec Tc = 25°C Tj = 175°C Single Pulse V GS = 0V 1.0 100µsec 1msec 72 70 0.5 0.4 0.3 0.2 68 0.1 0.0 66 0 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( °C ) 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage RDS(on), Drain-to -Source On Resistance ( m) 10 Fig 12. Typical Coss Stored Energy 14 12 Vgs = 5.5V Vgs = 6.0V Vgs = 7.0V Vgs = 8.0V Vgs = 10V 10 8 6 4 2 0 40 80 120 160 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFB/S/SL7540PbF Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart = 25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 65A 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2014 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback November 6, 2014 IRFB/S/SL7540PbF 12 3.5 2.5 2.0 ID = 100µA ID = 250µA 1.5 ID = 1.0mA ID = 1.0A 8 TJ = 125°C 6 4 2 1.0 0.5 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000 TJ , Temperature ( °C ) diF /dt (A/µs) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 200 12 IF = 43A V R = 51V IF = 65A V R = 51V 10 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 150 QRR (nC) 8 IRRM (A) 10 IF = 43A V R = 51V TJ = 25°C 3.0 IRRM (A) V GS(th) , Gate threshold Voltage (V) 4.0 6 100 4 50 2 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt 200 IF = 65A V R = 51V TJ = 25°C 150 QRR (nC) TJ = 125°C 100 50 0 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFB/S/SL7540PbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG IAS 20V tp + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback November 6, 2014 IRFB/S/SL7540PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM BLED O N W W 19, 2000 IN T H E A S S E M B L Y L IN E "C " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFB/S/SL7540PbF TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW19, 1997 IN THE ASSEMBLYLINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLYSITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFB/S/SL7540PbF D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFB/S/SL7540PbF D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 IRFB/S/SL7540PbF Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level Moisture Sensitivity Level TO-220 N/A 2 D Pak MSL1 TO-262 N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/6/2014 Comments Updated EAS (L =1mH) = 313mJ on page 2 Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 25A, VGS =10V”. on page 2 Updated package outline on page 9,10,11. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014