NCP4420, NCP4429 6 A High-Speed MOSFET Drivers MARKING DIAGRAM 8 SO–8 D SUFFIX CASE 751 8 1 Latch–Up Protected: Will Withstand 1.5 A Reverse Output Current Logic Input Will Withstand Negative Swing Up to 5 V ESD Protected (4 kV) Matched Rise and Fall Times (25 nsec) High Peak Output Current (6 A Peak) Wide Operating Range (4.5 V to 18 V) High Capacitive Load Drive (10,000 pF) Short Delay Time (55 nsec Typ) Logic High Input, any Voltage (2.4 V to VDD) Low Supply Current with Logic “1’’ Input (450 µA) Low Output Impedance (2.5 Ω) Output Voltage Swing to within 25 mV of Ground or VDD Temperature Range –40°C to +85°C 8 1 1 x YY, Y WW X Z CO August, 2002 – Rev. 1 = Device Number (0 or 9) = Year = Work Week = Assembly ID Code = Subcontractor ID Code = Country of Orgin PIN CONNECTIONS 8–Pin SOIC VDD 1 INPUT 2 NC 3 GND 4 8 VDD 7 OUTPUT 6 OUTPUT 5 GND (Top View) Switch–Mode Power Supplies Motor Controls Pulse Transformer Driver Class D Switching Amplifiers Semiconductor Components Industries, LLC, 2002 NCP442x YYWWXZ CO PDIP–8 P SUFFIX CASE 626 Applications • • • • NCP 442x YWWXZ 1 8 Features • • • • • • • • • • • • • http://onsemi.com NCP4420D NCP4429D The NCP4420/NCP4429 are 6 A (peak), single output, MOSFET drivers. The NCP4429 is an inverting driver while the NCP4420 is a non–inverting driver. These drivers are fabricated in CMOS for lower power and more efficient operation versus bipolar drivers. Both drivers have TTL–compatible inputs, which can be driven as high as VDD + 0.3 V or as low as –5 V without upset or damage to the device. This eliminates the need for external level shifting circuitry and its associated cost and size. The output swing is rail–to–rail ensuring better drive voltage margin, especially during power up/power down sequencing. Propagational delay time is only 55 nsec (typ.) and the output rise and fall times are only 25 nsec (typ.) into 2500 pF across the useable power supply range. Unlike other drivers, the NCP4420/NCP4429 are virtually latch–up proof. They can replace three or more discrete components saving PCB area, costs and improving overall system reliability. ORDERING INFORMATION 1 Device Package Shipping NCP4420DR2 Non–Inverting SO–8 2500 Tape & Reel NCP4429DR2 Inverting SO–8 2500 Tape & Reel NCP4420P Non–Inverting PDIP–8 50 Units/Rail NCP4429P Inverting PDIP–8 50 Units/Rail Publication Order Number: NCP4420/D NCP4420, NCP4429 FUNCTIONAL BLOCK DIAGRAM VDD 500 µA NCP4429 300 mV OUTPUT INPUT 4.7 V NCP4420 GND EFFECTIVE INPUT C = 38 pF ABSOLUTE MAXIMUM RATINGS* Rating Value Unit +20 V –5.0 to VDD V Input Current (VIN VDD) 50 mA Power Dissipation, TA 70°C SOIC PDIP 470 730 Derating Factors (To Ambient) SOIC PDIP 4.0 8.0 Supply Voltage Input Voltage mW mW/°C Storage Temperature Range, Tstg Operating Temperature (Chip) Operating Temperature Range (Ambient), TA Lead Temperature (Soldering, 10 sec) –65 to +150 °C +150 °C –40 to +85 °C +300 °C *Static–sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under “Absolute Maximum Ratings’’ may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = +25°C with 4.5 V VDD 18 V, unless otherwise specified.) Characteristic Symbol Test Conditions Min Typ Max Unit Logic 1 High Input Voltage VIH – 2.4 1.8 – V Logic 0 Low Input Voltage VIL – – 1.3 0.8 V VIN (Max) – –5.0 – VDD +0.3 V IIN 0 V VIN VDD –10 – 10 µA High Output Voltage VOH See Figure 1 VDD –0.025 – – V Low Output Voltage VOL See Figure 1 – – 0.025 V Output Resistance, High ROH IOUT = 10 mA, VDD = 18 V – 2.1 2.8 Ω Output Resistance, Low ROL IOUT = 10 mA, VDD = 18 V – 1.5 2.5 Ω Input Input Voltage Range Input Current Output http://onsemi.com 2 NCP4420, NCP4429 Characteristic Symbol Test Conditions Min Typ Max Unit Peak Output Current IPK VDD = 18 V (See Figure 5) – 6.0 – A Latch–Up Protection Withstand Reverse Current IREV Duty Cycle 2% t 300 µs 1.5 – – A tR Figure 1, CL = 2500 pF – 25 35 nsec Fall Time tF Figure 1, CL = 2500 pF – 25 35 nsec Delay Time 1 tD1 Figure 1 – 55 75 nsec Delay Time 2 tD2 Figure 1 – 55 75 nsec IS VIN = 3.0 V VIN = 0 V – – 0.45 55 1.5 150 mA µA VDD – 4.5 – 18 V Output Switching Time (Note 1) Rise Time Power Supply Power Supply Current Operating Input Voltage 1. Switching times guaranteed by design. ELECTRICAL CHARACTERISTICS (Measured over operating temperature range with 4.5 V VDD 18 V, unless otherwise specified.) Characteristic Symbol Test Conditions Min Typ Max Unit Logic 1 High Input Voltage VIH – 2.4 Logic 0 Low Input Voltage VIL – – – – V – 0.8 V VIN (Max) – –5.0 – VDD +0.3 V IIN 0 V VIN VDD –10 – 10 µA VOH See Figure 1 VDD –0.025 – – V Input Input Voltage Range Input Current Output High Output Voltage Low Output Voltage VOL See Figure 1 – – 0.025 V Output Resistance, High ROH IOUT = 10 mA, VDD = 18 V – 3.0 5.0 Ω Output Resistance, Low ROL IOUT = 10 mA, VDD = 18 V – 2.3 5.0 Ω Rise Time tR Figure 1, CL = 2500 pF – 32 60 nsec Fall Time tF Figure 1, CL = 2500 pF – 34 60 nsec Delay Time 1 tD1 Figure 1 – 50 100 nsec Delay Time 2 tD2 Figure 1 – 65 100 nsec IS VIN = 3.0 V VIN = 0 V – – 0.45 60 3.0 400 mA µA VDD – 4.5 – 18 V Switching Time (Note 1) Power Supply Power Supply Current Operating Input Voltage 1. Switching times guaranteed by design. http://onsemi.com 3 NCP4420, NCP4429 VIL = 18 V +5 V 1 µF 90% INPUT 1 8 10% 0V 0.1 µF 0.1 µF +18 V tD1 tD2 tF tR 90% 90% OUTPUT INPUT 2 6 7 10% 0V 10% INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 nS CL = 2500 pF NCP4429 4 OUTPUT 5 Figure 1. Switching Time Test Circuit TYPICAL CHARACTERISTICS 120 100 100 80 CL = 10,000 pF CL = 10,000 pF TIME (ns) TIME (ns) 80 60 CL = 4700 pF 60 40 CL = 4700 pF 20 CL = 220 pF 40 CL = 220 pF 20 0 5 7 9 11 13 0 15 5 7 9 11 13 15 VDD (V) VDD (V) Figure 2. Rise Time vs. Supply Voltage Figure 3. Fall Time vs. Supply Voltage 50 100 80 CL = 2200 pF VDD = 18 V 40 60 TIME (ns) TIME (ns) VDD = 5 V 30 tFALL 20 tRISE 40 VDD = 12 V VDD = 18 V 20 10 0 –60 –20 20 60 100 10 1000 140 TA (°C) 10,000 CAPACITIVE LOAD (pF) Figure 4. Rise and Fall Times vs. Temperature Figure 5. Rise Time vs. Capacitive Load http://onsemi.com 4 NCP4420, NCP4429 TYPICAL CHARACTERISTICS 100 65 80 60 DELAY TIME (ns) TIME (ns) 60 VDD = 5 V 40 VDD = 12 V VDD = 18 V 20 55 tD2 50 45 tD1 40 10 1000 35 10000 4 6 8 10 12 14 SUPPLY VOLTAGE (V) CAPACITIVE LOAD (pF) Figure 6. Fall Time vs. Capacitive Load 18 Figure 7. Propagation Delay Time vs.Supply Voltage 50 84 VDD = 15 V SUPPLY CURRENT (mA) CL = 2200 pF VDD = 18 V 40 DELAY TIME (ns) 16 tD2 30 tD1 20 10 70 56 42 500 kHz 28 200 kHz 14 20 kHz 0 –60 0 –20 20 60 100 0 140 100 1000 CAPACITIVE LOAD (pF) TA (°C) Figure 8. Propagation Delay Time vs. Temperature 10,000 Figure 9. Supply Current vs. Capacitive Load 1000 5 18 V 100 mA 10 V 100 4 R OUT ( Ω ) SUPPLY CURRENT (mA) CL = 220 pF 5V 10 0 50 mA 10 mA 3 2 0 100 1000 FREQUENCY (kHz) 10,000 5 7 9 11 13 VDD (V) Figure 10. Supply Current vs. Frequency Figure 11. High–State Output Resistance http://onsemi.com 5 15 NCP4420, NCP4429 TYPICAL CHARACTERISTICS 2.5 200 LOAD = 2200 pF DELAY TIME (ns) R OUT ( Ω ) 160 2 100 mA 50 mA 1.5 10 mA 120 INPUT 2.4 V INPUT 3 V 80 INPUT 5 V 40 INPUT 8 V AND 10 V 1 7 9 11 13 0 15 5 6 8 7 9 VDD (V) Figure 12. Low–State Output Resistance 3 2 1 0 5 6 7 10 11 VDD (V) 12 13 14 Figure 13. Effect of Input Amplitude on Propagation Delay 4 CROSSOVER AREA (A• S) x 10–9 5 8 9 10 11 12 SUPPLY VOLTAGE (V) 13 14 Figure 14. Total nA•S Crossover* * The values on this graph represent the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2. http://onsemi.com 6 15 15 NCP4420, NCP4429 PACKAGE DIMENSIONS PDIP–8 P SUFFIX CASE 626–05 ISSUE K 8 NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 5 –B– 1 4 DIM A B C D F G H J K L M N F –A– NOTE 2 L C J –T– MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC --10 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC --10 0.030 0.040 N SEATING PLANE D M K G H 0.13 (0.005) M T A M B M SO–8 D SUFFIX CASE 751–06 ISSUE T D A 8 E 5 0.25 H 1 M B M 4 h B e X 45 A C SEATING PLANE L 0.10 A1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. C B 0.25 M C B S A S http://onsemi.com 7 DIM A A1 B C D E e H h L MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0 7 NCP4420, NCP4429 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 2–9–1 Kamimeguro, Meguro–ku, Tokyo, Japan 153–0051 Phone: 81–3–5773–3850 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 NCP4420/D