NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads (capacitive, resistive, or inductive) which require a low impedance driver capable of high peak currents and fast switching times. Applications such as heavily loaded clock lines, coaxial cables, or piezoelectric transducers can all be driven with the NCP4423/4424/4425. The only known limitation on loading is that the total power dissipated of the driver must be kept within the maximum power dissipation limits of the package. http://onsemi.com MARKING DIAGRAM 16 SO–16 DW SUFFIX CASE 751G 16 1 NCP442x YYWWXZ 1 Features • • • • • • • • • • High Peak Output Current (3 A) Wide Operating Range (4.5 V to 18 V) High Capacitive Load Drive Capability (1800 pF in 25 nsec) Short Delay Times (40 nsec Typ) Matched Rise/Fall Times Low Supply Current With Logic “1’’ Input (3.5 mA) With Logic “0’’ Input (350 µA) Low Output Impedance (3.5 Ω Typ) Latch–Up Protected: Will Withstand 1.5 A Reverse Current Logic Input Will Withstand Negative Swing Up to 5 V ESD Protected (4 kV) 8 NCP442x YYWWXZ CO PDIP–8 P SUFFIX CASE 626 8 1 1 x YY WW X Z CO = Device Number (3, 4, or 5) = Year = Work Week = Assembly ID Code = Subcontractor ID Code = Country of Origin ORDERING INFORMATION Device FUNCTIONAL BLOCK DIAGRAM VDD INVERTING 300 mV OUTPUT INPUT Package Shipping NCP4423DWR2 SO–16 1000 Tape & Reel NCP4424DWR2 SO–16 1000 Tape & Reel NCP4425DWR2 SO–16 1000 Tape & Reel NCP4423P PDIP–8 50 Units/Rail NCP4424P PDIP–8 50 Units/Rail NCP4425P PDIP–8 50 Units/Rail NONINVERTING 4.7 V NCP4423 DUAL INVERTING NCP4424 DUAL NONINVERTING NCP4425 ONE INV., ONE NONINV GND EFFECTIVE INPUT C = 20 pF (EACH INPUT) NOTES: 1. NCP4425 has one inverting and one noninverting driver. 2. Ground any unused driver input. Semiconductor Components Industries, LLC, 2002 August, 2002 – Rev. 2 1 Publication Order Number: NCP4423/D NCP4423, NCP4424, NCP4425 PIN CONNECTIONS 16–Pin SO Wide 4423 4424 4425 8–Pin DIP NC 1 16 NC NC NC 1 IN A 2 15 OUT A OUT A OUT A 2 NC 3 14 OUT A OUT A OUT A 3 GND 4 13 VDD VDD VDD 4 GND 5 12 VDD VDD VDD NCP4423 NCP4424 NCP4425 NC 6 11 OUT B OUT B OUT B IN B 7 10 OUT B OUT B OUT B NC 8 9 NC NC NC (Top View) NC = NO CONNECTION NOTE: Duplicate pins must both be connected for proper operation. http://onsemi.com 2 NCP4423 NCP4424 NCP4425 8 7 6 5 NCP4423, NCP4424, NCP4425 ABSOLUTE MAXIMUM RATINGS Value Unit Supply Voltage Rating +22 V Input Voltage, IN A or IN B (VDD + 0.3 V to GND – 5.0 V) –5 V +150 °C –65 to +150 °C Lead Temperature (Soldering, 10 sec) +300 °C Package Thermal Resistance SOIC, RθJA PDIP, RθJA PDIP, RθJC 155 –125 –45 Operating Temperature Range –40 to +85 °C 470 730 mW mc Maximum Chip Temperature Storage Temperature Range, Tstg °C/W Package Power Dissipation (TA 70°C) SOIC PDIP ELECTRICAL CHARACTERISTICS (TA = +25°C with 4.5 V VDD 18 V, unless otherwise specified.) Characteristic Symbol Test Conditions Min Typ Max Unit Logic 1 High Input Voltage VOH – 2.4 – – V Logic 0 Low Input Voltage VIL – – – 0.8 V Input Current IIN 0 V VIN VDD –1.0 – 1.0 µA VOH – VDD –0.025 – – V Input Output High Output Voltage Low Output Voltage VOL – – – 0.025 V Output Resistance, High ROH IOUT = 10 mA, VDD = 18 V – 2.8 5.0 Ω Output Resistance, Low ROL IOUT = 10 mA, VDD = 18 V – 3.5 5.0 Ω Peak Output Current IPK – – 3.0 – A Latch–Up Protection Withstand Reverse Current IREV Duty Cycle 2% t 300 µs 1.5 – – A Rise Time tR Figure 1, CL = 1800 pF – 23 35 nsec Fall Time tF Figure 1, CL = 1800 pF – 25 35 nsec Delay Time 1 tD1 Figure 1, CL = 1800 pF – 33 75 nsec Delay Time 2 tD2 Figure 1, CL = 1800 pF – 38 75 nsec IS VIN = 3.0 V (Both Inputs) VIN = 0 V (Both Inputs) – – 1.5 0.15 2.5 0.25 mA Switching Time (Note 1) Power Supply Power Supply Current 1. Switching times guaranteed by design. http://onsemi.com 3 NCP4423, NCP4424, NCP4425 ELECTRICAL CHARACTERISTICS (Over operating temperature range with 4.5 V VDD 18 V, unless otherwise specified.) Characteristic Symbol Test Conditions Min Typ Max Unit Logic 1 High Input Voltage VIH – 2.4 – – V Logic 0 Low Input Voltage VIL – – – 0.8 V Input Current IIN 0 V VIN VDD –10 – 10 µA High Output Voltage VOH – VDD –0.025 – – V Low Output Voltage VOL – – – 0.025 V Output Resistance, High RO IOUT = 10 mA, VDD = 18 V – 3.7 8.0 Ω Output Resistance, Low RO IOUT = 10 mA, VDD = 18 V – 4.3 8.0 Ω Peak Output Current IPK – – 3.0 – A Latch–Up Protection Withstand Reverse Current IREV Duty Cycle 2% t 300 µsec 1.5 – – A tR Figure 1, CL = 1800 pF – 28 60 nsec Fall Time tF Figure 1, CL = 1800 pF – 32 60 nsec Delay Time 1 tD1 Figure 1, CL = 1800 pF – 32 100 nsec Delay Time 2 tD2 Figure 1, CL = 1800 pF – 38 100 nsec IS VIN = 3.0 V (Both Inputs) VIN = 0 V (Both Inputs) – – 2.0 0.2 3.5 0.3 mA Input Output Switching Time (Note 1) Rise Time Power Supply Power Supply Current 1. Switching times guaranteed by design. Test Circuit Test Circuit VDD = 16 V 1 µF WIMA MKS–2 1 µF WIMA MKS–2 0.1 µF CERAMIC 1 INPUT VDD = 16 V OUTPUT 1 INPUT OUTPUT CL = 1800 pF INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 ns CL = 1800 pF 2 16 V 90% INPUT 10% tD1 tF tD2 0V tR 90% OUTPUT 10% 10% 16 V 90% OUTPUT 0V NCP4424 (1/2 NCP4425) +5 V 90% INPUT 0V 2 INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 ns NCP4423 (1/2 NCP4425) +5 V 0.1 µF CERAMIC 10% 0V Figure 1. Inverting Driver Switching Time 90% tD1 tR 10% 90% tD2 tF 10% Figure 2. Noninverting Driver Switching Time http://onsemi.com 4 NCP4423, NCP4424, NCP4425 TYPICAL ELECTRICAL CHARACTERISTICS 100 100 4700 pF 4700 pF 80 80 3300 pF 60 t FALL (nsec) t RISE (nsec) 1000 pF 1500 pF 2200 pF 40 20 2200 pF 20 470 pF 4 6 8 10 12 14 16 0 18 6 8 10 12 14 16 VDD Figure 3. Rise Time vs. Supply Voltage Figure 4. Fall Time vs. Supply Voltage 18 100 5V 60 5V 80 t FALL (nsec) 80 t RISE (nsec) 4 VDD 100 10 V 15 V 40 60 10 V 15 V 40 20 20 0 100 1000 CLOAD (pF) 0 100 10000 1000 10000 CLOAD (pF) Figure 5. Rise Time vs. Capacitive Load Figure 6. Fall Time vs. Capacitive Load 32 100 CLOAD = 2200 pF CLOAD = 2200 pF VDD = 10 V tFALL 30 80 DELAY TIME (ns) 28 TIME (ns) 1500 pF 40 470 pF 0 1000 pF 3300 pF 60 tRISE 26 24 tRISE 22 tFALL 20 18 –55 –35 –15 tD1 60 40 tD2 20 5 25 45 65 85 105 0 125 0 TA (°C) 1 2 3 4 5 6 7 8 9 10 11 12 INPUT (V) Figure 7. Rise and Fall Times vs. Temperature Figure 8. Propagation Delay vs. Input Amplitude http://onsemi.com 5 NCP4423, NCP4424, NCP4425 TYPICAL ELECTRICAL CHARACTERISTICS 50 50 CLOAD = 2200 pF 45 CLOAD = 2200 pF 45 DELAY TIME (ns) DELAY TIME (ns) tD2 40 35 tD2 30 tD2 40 35 tD2 30 25 25 20 4 6 8 10 12 14 16 20 –55 18 –35 –15 5 VDD Figure 9. Propagation Delay Time vs. Supply Voltage 25 45 TA (°C) 65 85 105 125 105 125 Figure 10. Delay Time vs. Temperature 1.4 TA = +25°C BOTH INPUTS = 1 1.2 I QUIESCENT (mA) I QUIESCENT (mA) 1 BOTH INPUTS = 0 0.1 1.0 0.8 INPUTS = 1 0.6 0.4 0.2 0.01 4 6 8 10 12 14 16 INPUTS = 0 0.0 –55 18 –35 –15 5 VDD Figure 11. Quiescent Current vs. Supply Voltage 85 14 12 12 WORST CASE @ TJ = +150°C WORST CASE @ TJ = +150°C 10 RDS(ON) ( Ω ) RDS(ON) ( Ω ) 65 Figure 12. Quiescent Current vs. Temperature 14 8 6 4 2 25 45 TA (°C) 8 6 TYP @ TA = +25°C 4 TYP @ TA = +25°C 4 10 2 VDD 10 VDD Figure 13. Output Resistance (Output High) vs. Supply Voltage Figure 14. Output Resistance (Output Low) vs. Supply Voltage 6 8 10 12 14 16 18 4 6 http://onsemi.com 6 8 12 14 16 18 NCP4423, NCP4424, NCP4425 TYPICAL ELECTRICAL CHARACTERISTICS 60 60 VDD = 18 V 63.4 kHz 40 35.5 kHz 20 kHz 30 355 kHz 20 10 1000 pF 40 ISUPPLY (mA) I SUPPLY (mA) 634 kHz 30 10,000 pF 20 100 pF 200 kHz 10 112.5 kHz 0 0 100 1000 CLOAD (pF) 10 10000 90 VDD = 12 V 80 60 ISUPPLY (mA) ISUPPLY (mA) 1000 pF 70 200 kHz 112.5 kHz 63.4 kHz 50 1.125 MHz 20 kHz 30 634 kHz 50 40 30 100 pF 10,000 pF 20 355 kHz 10 10 0 100 0 1000 CLOAD (pF) 0 10000 100 1000 FREQUENCY (kHz) Figure 17. Supply Current vs. Capacitive Load Figure 18. Supply Current vs. Frequency 120 120 4700 pF VDD = 6 V VDD = 6 V 100 100 10,000 pF 634 kHz 355 kHz 80 ISUPPLY (mA) ISUPPLY (mA) 3300 pF VDD = 12 V 80 2 MHz 60 20 1000 Figure 16. Supply Current vs. Frequency 90 40 100 FREQUENCY (kHz) Figure 15. Supply Current vs. Capacitive Load 70 3300 pF VDD = 18 V 50 50 112.5 kHz 20 kHz 60 355 kHz 40 80 60 2200 pF 1000 pF 100 pF 40 2 MHz 20 20 1.125 MHz 0 100 100 pF 1000 CLOAD (pF) 10000 0 10 Figure 19. Supply Current vs. Capacitive Load 100 FREQUENCY (kHz) 1000 Figure 20. Supply Current vs. Frequency http://onsemi.com 7 NCP4423, NCP4424, NCP4425 TYPICAL ELECTRICAL CHARACTERISTICS 10–8 8 6 4 1400 1200 MAX. POWER (mA) 16 Pin SOIC A • sec 2 10–9 8 6 4 2 1000 800 600 400 200 10–10 0 2 4 6 8 10 12 14 16 18 0 0 VIN 20 40 60 80 100 120 AMBIENT TEMPERATURE (°C) Figure 21. NCP4423 Crossover Energy Figure 22. Thermal Derating Curves NOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. Static–sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings (See page 2) may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. http://onsemi.com 8 140 NCP4423, NCP4424, NCP4425 PACKAGE DIMENSIONS PDIP–8 P SUFFIX CASE 626–05 ISSUE K 8 NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 5 –B– 1 4 DIM A B C D F G H J K L M N F –A– NOTE 2 L C J –T– MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC --10 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC --10 0.030 0.040 N SEATING PLANE D M K G H 0.13 (0.005) M T A M B M SO–16 DW SUFFIX CASE 751G–03 ISSUE B A D 9 1 8 NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INLCUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. 16X M 14X e T A S B h X 45 S L A 0.25 B B A1 H E 0.25 8X M B M 16 SEATING PLANE T C http://onsemi.com 9 DIM A A1 B C D E e H h L MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 10.15 10.45 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0 7 NCP4423, NCP4424, NCP4425 Notes http://onsemi.com 10 NCP4423, NCP4424, NCP4425 Notes http://onsemi.com 11 NCP4423, NCP4424, NCP4425 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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