9.0 A High-Speed MOSFET Drivers

NCP4421, NCP4422
9.0 A High-Speed MOSFET
Drivers
The NCP4421/4422 are high current buffer/drivers capable of
driving large MOSFETs and IGBTs.
They are essentially immune to any form of upset except direct
overvoltage or over–dissipation – they cannot be latched under any
conditions within their power and voltage ratings; they are not subject
to damage or improper operation when up to 5.0 V of ground bounce is
present on their ground terminals; they can accept, without either
damage or logic upset, more than 1.0 A inductive current of either
polarity being forced back into their outputs. In addition, all terminals
are fully protected against up to 4.0 kV of electrostatic discharge.
The inputs may be driven directly from either TTL or CMOS (3.0 V
to 18 V). In addition, 300 mV of hysteresis is built into the input,
providing noise immunity and allowing the device to be driven from
slowly rising or falling waveforms.
Features
•
•
•
•
•
•
PDIP–8
P SUFFIX
CASE 626
8
1
TO–220
T SUFFIX
CASE 314D
1
Tough CMOS Construction
High Peak Output Current (9.0 A)
High Continuous Output Current (2.0 A Max)
Fast Rise and Fall Times:
– 30 ns with 4,700 pF Load
– 180 ns with 47,000 pF Load
Short Internal Delays (30 nsec Typ)
Low Output Impedance (1.4 Ω Typ)
5
PIN CONNECTIONS
8–Pin Plastic DIP
VDD 1
Applications
•
•
•
•
•
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8 VDD
INPUT 2
7 OUTPUT
NC 3
6 OUTPUT
GND 4
Line Drivers for Extra–Heavily–Loaded Lines
Pulse Generators
Driving the Largest MOSFETs and IGBTs
Local Power ON/OFF Switch
Motor and Solenoid Driver
5 GND
5–Pin TO–220
FUNCTIONAL BLOCK DIAGRAM
VDD
Tab is
common
to VDD
300 mV
OUTPUT
INPUT
INPUT
GND
VDD
GND
OUTPUT
INVERTING
NOTE: Duplicate pins must both be
connected for proper operation.
NC = No connection
NONINVERTING
4.7 V
NCP4421/NCP4422
Inverting/Noninverting
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
GND
EFFECTIVE
INPUT C = 20 pF
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
 Semiconductor Components Industries, LLC, 2002
August, 2002 – Rev. 1
1
Publication Order Number:
NCP4421/D
NCP4421, NCP4422
ABSOLUTE MAXIMUM RATINGS*
Rating
Symbol
Power Dissipation (TA 70°C)
PDIP
5–Pin TO–220
Value
Unit
W
–
730
1.6
Power Dissipation (TC 25°C)
5–Pin TO–220 (With Heat Sink)
12.5
–
W
Derating Factors (To Ambient)
PDIP
5–Pin TO–220
–
mW/°C
Thermal Impedance (To Case)
5–Pin TO–220 RθJC
–
10
°C/W
Tstg
–65 to +150
°C
Operating Temperature (Chip)
–
150
°C
Operating Temperature (Ambient)
TO–220 Version
PDIP Version
–
Lead Temperature (10 Seconds)
–
8.0
12
Storage Temperature
°C
0 to +70
–40 to +85
Supply Voltage
300
°C
VCC
20
V
Input Voltage
–
VDD +3.0 to
GND –5.0
V
Input Current (VIN VDD)
–
50
mA
*Static–sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C with 4.5 V VDD 18 V unless otherwise specified.)
Characteristics
Test Conditions
Symbol
Min
Typ
Max
Unit
Logic 1 Input Voltage
–
VIH
2.4
1.8
–
V
Logic 0 Input Voltage
–
VIL
–
1.3
0.8
V
0 V VIN VDD
IIN
–10
–
10
µA
High Output Voltage
See Figure 1
VOH
VDD – 0.025
–
–
V
Low Output Voltage
See Figure 1
VOL
–
–
0.025
V
Output Resistance, High
VDD = 18 V, IO = 10 mA
RO
–
1.4
–
Ω
Output Resistance, Low
VDD = 18 V, IO = 10 mA
RO
–
0.9
1.7
Ω
VDD = 18 V
IPK
–
9.0
–
A
10 V VDD 18 V, TC = 25°
(TC4421/22 CAT only)
IDC
2.0
–
–
A
Duty Cycle 2%
Withstand Reverse Current
IREV
1500
t 300 µs
–
–
mA
Rise Time
Figure 1, CL = 10,000 pF
tR
–
60
75
nsec
Fall Time
Figure 1, CL = 10,000 pF
tF
–
60
75
nsec
Delay Time
Figure 1
tD1
–
30
60
nsec
Delay Time
Figure 1
tD2
–
33
60
nsec
Input
Input Current
Output
Peak Output Current
Continuous Output Current
Latch–Up Protection
Switching Time (Note 1)
1. Switching times guaranteed by design.
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NCP4421, NCP4422
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C with 4.5 V VDD 18 V unless otherwise specified.)
Characteristics
Test Conditions
Symbol
Min
Typ
Max
Unit
VIN = 3.0 V
VIN = 0 V
IS
–
–
0.2
55
1.5
150
mA
µA
–
VDD
4.5
–
18
V
Logic 1 Input Voltage
–
VIH
2.4
–
–
V
Logic 0 Input Voltage
–
VIL
–
–
0.8
V
0 V VIN VDD
IIN
–10
–
10
µA
Power Supply
Power Supply Current
Operating Input Voltage
Input
Input Current
ELECTRICAL CHARACTERISTICS (Measured over operating temperature range with 4.5 V VS 18 V unless otherwise specified.)
Characteristics
Test Conditions
Symbol
Min
Typ
Max
Unit
Logic 1 Input Voltage
–
VIH
2.4
–
–
V
Logic 0 Input Voltage
–
VIL
–
–
0.8
V
0 V VIN VDD
IIN
–10
–
10
µA
See Figure 1
VOH
VDD – 0.025
–
–
V
Input
Input Current
Output
High Output Voltage
Low Output Voltage
See Figure 1
VOL
–
–
0.025
V
Output Resistance, High
VDD = 18 V, IO = 10 mA
RO
–
2.4
3.6
W
Output Resistance, Low
VDD = 18 V, IO = 10 mA
RO
–
1.8
2.7
W
Rise Time
Figure 1, CL = 10,000 pF
tR
–
60
120
nsec
Fall Time
Switching Time (Note 1)
Figure 1, CL = 10,000 pF
tF
–
60
120
nsec
Delay Time
Figure 1
tD1
–
50
80
nsec
Delay Time
Figure 1
tD2
–
65
80
nsec
VIN = 3.0 V
VIN = 0 V
IS
–
–
0.45
0.06
3.0
0.2
mA
–
VDD
4.5
–
18
V
Power Supply
Power Supply Current
Operating Input Voltage
1. Switching times guaranteed by design.
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NCP4421, NCP4422
VDD = 18 V
+5 V
1 µF
90%
INPUT
1
8
10%
0V
0.1 µF
0.1 µF
+18 V
tD1
tF
tD2
tR
90%
OUTPUT
INPUT
2
6
7
10%
0V
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10 nS
CL = 2500 pF
NCP4421
4
OUTPUT
5
Figure 1. Switching Time Test Circuit
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4
10%
90%
NCP4421, NCP4422
TYPICAL ELECTRICAL CHARACTERISTICS
220
180
200
160
22000 pF
180
22000 pF
140
120
140
120
tFALL (ns)
tRISE (ns)
160
10000 pF
100
80
80
10000 pF
60
4700 pF
60
100
4700 pF
40
40
1000 pF
20
20
0
1000 pF
6
4
8
12
10
14
0
18
16
4
6
8
10
12
14
VDD
Figure 2. Rise Time vs. Supply Voltage
Figure 3. Fall Time vs. Supply Voltage
300
5V
5V
250
250
10 V
10 V
200
tFALL (ns)
tRISE (ns)
200
150
15 V
150
15 V
100
100
50
50
0
100
1k
10 k
0
100
100 k
1k
10 k
100 k
CLOAD (pF)
CLOAD (pF)
Figure 4. Rise Time vs. Capacitive Load
Figure 5. Fall Time vs. Capacitive Load
50
90
CLOAD = 10000 pF
VDD = 15 V
CLOAD = 1000 pF
45
TIME (ns)
70
TIME (ns)
18
VDD
300
80
16
60
tRISE
40
tD2
35
50
tD1
40
30
tFALL
25
30
–40
0
40
80
120
4
6
8
10
12
14
16
TA (°C)
VDD
Figure 6. Rise and Fall Times vs. Temperature
Figure 7. Propagation Delay vs. Supply
Voltage
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18
NCP4421, NCP4422
TYPICAL ELECTRICAL CHARACTERISTICS
220
180
200
160
47000 pF
2 MHz
180
63.2 kHz
140
160
10000 pF
120
ISUPPLY (mA)
ISUPPLY (mA)
22000 pF
140
120
100
1.125 MHz
100
80
20 kHz
632 kHz
60
80
0.1 µF
60
4700 pF
40
40
200 kHz
20
20
0
100
1k
10 k
470 pF
0
10
100 k
100
1k
CLOAD (pF)
FREQUENCY (kHz)
Figure 8. Supply Current vs. Capacitive Load
(VDD = 18 V)
Figure 9. Supply Current vs. Frequency
(VDD = 18 V)
180
180
22000 pF
63.2 kHz
160
160
140
120
120
4700 pF
100
47000 pF
ISUPPLY (mA)
ISUPPLY (mA)
10000 pF
140
2 MHz
100
20 kHz
80
60
1.125 MHz
40
632 kHz
40
20
200 kHz
20
0
100
1k
10 k
60
0.1 µF
470 pF
0
10
100 k
100
1k
CLOAD (pF)
FREQUENCY (kHz)
Figure 10. Supply Current vs. Capacitive Load
(VDD = 12 V)
Figure 11. Supply Current vs. Frequency
(VDD = 12 V)
100
120
47000 pF
200 kHz
90
100
80
70
63.2 kHz
60
50
40
22000 pF
4700 pF
ISUPPLY (mA)
ISUPPLY (mA)
80
20 kHz
2 MHz
632 kHz
30
20
10000 pF
80
60
0.1 µF
40
20
10
0
100
470 pF
1k
10 k
100 k
0
10
100
1k
CLOAD (pF)
FREQUENCY (kHz)
Figure 12. Supply Current vs. Capacitive Load
(VDD = 6 V)
Figure 13. Supply Current vs. Frequency
(VDD = 6 V)
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NCP4421, NCP4422
TYPICAL ELECTRICAL CHARACTERISTICS
120
50
110
VDD = 10 V
CLOAD = 10000 pF
45
40
TIME (ns)
TIME (ns)
100
90
80
70
60
tD2
50
40
30
20
tD2
35
tD1
30
tD1
10
0
1
2
25
3
4
5
6
7
8
9
20
–60
10
20
0
40
60
80
100 120
TA (°C)
Figure 14. Propagation Delay vs. Input Amplitude
Figure 15. Propagation Delay vs. Temperature
103
VDD = 18 V
IQUIESCENT (µA)
NOTE: The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss in a
single transition, divide the stated value by 2.
A•sec
–20
INPUT (V)
10–6
10–7
10–8
0
6
10
8
12
14
16
INPUT = 1
102
INPUT = 0
–60 –40
18
–20
0
20
40
60
80
100 120
VDD
TJ (°C)
Figure 16. Crossover Energy vs. Supply Voltage
Figure 17. Quiescent Supply Current vs.
Temperature
6
5.5
6
5.5
5
5
4.5
4.5
TJ = 150°C
4
RDS(ON) (Ω)
RDS(ON) (Ω)
–40
3.5
3
2.5
2
4
3.5
3
TJ = 150°C
2.5
2
TA = 25°C
1.5
1.5
1
1
0.5
0.5
4
6
8
10
12
14
16
18
TA = 25°C
4
6
8
10
12
14
16
VDD (V)
VDD (V)
Figure 18. High–State Output Resistance vs.
Supply Voltage
Figure 19. Low–State Output Resistance vs.
Supply Voltage
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18
NCP4421, NCP4422
MARKING DIAGRAMS
NCP442x
9914XY
CO
x
X
Y
CO
NCP442x
9914XY
CO
= 1 or 2
= Assembly ID Code
= Year
= Country of Origin
ORDERING INFORMATION
Device
Package
Temperature Range
Shipping
NCP4421T
5–Pin TO–220
0°C to + 70°C
50 Units/Rail
NCP4421P
8–Pin PDIP
–40°C to + 85°C
50 Units/Rail
NCP4422T
5–Pin TO–220
0°C to + 70°C
50 Units/Rail
NCP4422P
8–Pin PDIP
–40°C to + 85°C
50 Units/Rail
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NCP4421, NCP4422
Notes
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NCP4421, NCP4422
Notes
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NCP4421, NCP4422
PACKAGE DIMENSIONS
PDIP
P SUFFIX
CASE 626–05
ISSUE K
8
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
5
–B–
1
4
DIM
A
B
C
D
F
G
H
J
K
L
M
N
F
–A–
NOTE 2
L
C
J
–T–
MILLIMETERS
MIN
MAX
9.40
10.16
6.10
6.60
3.94
4.45
0.38
0.51
1.02
1.78
2.54 BSC
0.76
1.27
0.20
0.30
2.92
3.43
7.62 BSC
--10
0.76
1.01
INCHES
MIN
MAX
0.370
0.400
0.240
0.260
0.155
0.175
0.015
0.020
0.040
0.070
0.100 BSC
0.030
0.050
0.008
0.012
0.115
0.135
0.300 BSC
--10
0.030
0.040
N
SEATING
PLANE
D
M
K
G
H
0.13 (0.005)
M
T A
M
B
M
TO–220
T SUFFIX
CASE 314D–04
ISSUE E
–T–
–Q–
SEATING
PLANE
C
B
E
A
U
L
J
H
G
D
DIM
A
B
C
D
E
G
H
J
K
L
Q
U
1234 5
K
5 PL
0.356 (0.014)
M
T Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION D DOES NOT INCLUDE
INTERCONNECT BAR (DAMBAR) PROTRUSION.
DIMENSION D INCLUDING PROTRUSION SHALL
NOT EXCEED 10.92 (0.043) MAXIMUM.
M
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11
INCHES
MIN
MAX
0.572
0.613
0.390
0.415
0.170
0.180
0.025
0.038
0.048
0.055
0.067 BSC
0.087
0.112
0.015
0.025
0.990
1.045
0.320
0.365
0.140
0.153
0.105
0.117
MILLIMETERS
MIN
MAX
14.529 15.570
9.906 10.541
4.318
4.572
0.635
0.965
1.219
1.397
1.702 BSC
2.210
2.845
0.381
0.635
25.146 26.543
8.128
9.271
3.556
3.886
2.667
2.972
NCP4421, NCP4422
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
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NCP4421/D