NCP4421, NCP4422 9.0 A High-Speed MOSFET Drivers The NCP4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over–dissipation – they cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5.0 V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1.0 A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4.0 kV of electrostatic discharge. The inputs may be driven directly from either TTL or CMOS (3.0 V to 18 V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. Features • • • • • • PDIP–8 P SUFFIX CASE 626 8 1 TO–220 T SUFFIX CASE 314D 1 Tough CMOS Construction High Peak Output Current (9.0 A) High Continuous Output Current (2.0 A Max) Fast Rise and Fall Times: – 30 ns with 4,700 pF Load – 180 ns with 47,000 pF Load Short Internal Delays (30 nsec Typ) Low Output Impedance (1.4 Ω Typ) 5 PIN CONNECTIONS 8–Pin Plastic DIP VDD 1 Applications • • • • • http://onsemi.com 8 VDD INPUT 2 7 OUTPUT NC 3 6 OUTPUT GND 4 Line Drivers for Extra–Heavily–Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver 5 GND 5–Pin TO–220 FUNCTIONAL BLOCK DIAGRAM VDD Tab is common to VDD 300 mV OUTPUT INPUT INPUT GND VDD GND OUTPUT INVERTING NOTE: Duplicate pins must both be connected for proper operation. NC = No connection NONINVERTING 4.7 V NCP4421/NCP4422 Inverting/Noninverting ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. GND EFFECTIVE INPUT C = 20 pF DEVICE MARKING INFORMATION See general marking information in the device marking section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2002 August, 2002 – Rev. 1 1 Publication Order Number: NCP4421/D NCP4421, NCP4422 ABSOLUTE MAXIMUM RATINGS* Rating Symbol Power Dissipation (TA 70°C) PDIP 5–Pin TO–220 Value Unit W – 730 1.6 Power Dissipation (TC 25°C) 5–Pin TO–220 (With Heat Sink) 12.5 – W Derating Factors (To Ambient) PDIP 5–Pin TO–220 – mW/°C Thermal Impedance (To Case) 5–Pin TO–220 RθJC – 10 °C/W Tstg –65 to +150 °C Operating Temperature (Chip) – 150 °C Operating Temperature (Ambient) TO–220 Version PDIP Version – Lead Temperature (10 Seconds) – 8.0 12 Storage Temperature °C 0 to +70 –40 to +85 Supply Voltage 300 °C VCC 20 V Input Voltage – VDD +3.0 to GND –5.0 V Input Current (VIN VDD) – 50 mA *Static–sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = 25°C with 4.5 V VDD 18 V unless otherwise specified.) Characteristics Test Conditions Symbol Min Typ Max Unit Logic 1 Input Voltage – VIH 2.4 1.8 – V Logic 0 Input Voltage – VIL – 1.3 0.8 V 0 V VIN VDD IIN –10 – 10 µA High Output Voltage See Figure 1 VOH VDD – 0.025 – – V Low Output Voltage See Figure 1 VOL – – 0.025 V Output Resistance, High VDD = 18 V, IO = 10 mA RO – 1.4 – Ω Output Resistance, Low VDD = 18 V, IO = 10 mA RO – 0.9 1.7 Ω VDD = 18 V IPK – 9.0 – A 10 V VDD 18 V, TC = 25° (TC4421/22 CAT only) IDC 2.0 – – A Duty Cycle 2% Withstand Reverse Current IREV 1500 t 300 µs – – mA Rise Time Figure 1, CL = 10,000 pF tR – 60 75 nsec Fall Time Figure 1, CL = 10,000 pF tF – 60 75 nsec Delay Time Figure 1 tD1 – 30 60 nsec Delay Time Figure 1 tD2 – 33 60 nsec Input Input Current Output Peak Output Current Continuous Output Current Latch–Up Protection Switching Time (Note 1) 1. Switching times guaranteed by design. http://onsemi.com 2 NCP4421, NCP4422 ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C with 4.5 V VDD 18 V unless otherwise specified.) Characteristics Test Conditions Symbol Min Typ Max Unit VIN = 3.0 V VIN = 0 V IS – – 0.2 55 1.5 150 mA µA – VDD 4.5 – 18 V Logic 1 Input Voltage – VIH 2.4 – – V Logic 0 Input Voltage – VIL – – 0.8 V 0 V VIN VDD IIN –10 – 10 µA Power Supply Power Supply Current Operating Input Voltage Input Input Current ELECTRICAL CHARACTERISTICS (Measured over operating temperature range with 4.5 V VS 18 V unless otherwise specified.) Characteristics Test Conditions Symbol Min Typ Max Unit Logic 1 Input Voltage – VIH 2.4 – – V Logic 0 Input Voltage – VIL – – 0.8 V 0 V VIN VDD IIN –10 – 10 µA See Figure 1 VOH VDD – 0.025 – – V Input Input Current Output High Output Voltage Low Output Voltage See Figure 1 VOL – – 0.025 V Output Resistance, High VDD = 18 V, IO = 10 mA RO – 2.4 3.6 W Output Resistance, Low VDD = 18 V, IO = 10 mA RO – 1.8 2.7 W Rise Time Figure 1, CL = 10,000 pF tR – 60 120 nsec Fall Time Switching Time (Note 1) Figure 1, CL = 10,000 pF tF – 60 120 nsec Delay Time Figure 1 tD1 – 50 80 nsec Delay Time Figure 1 tD2 – 65 80 nsec VIN = 3.0 V VIN = 0 V IS – – 0.45 0.06 3.0 0.2 mA – VDD 4.5 – 18 V Power Supply Power Supply Current Operating Input Voltage 1. Switching times guaranteed by design. http://onsemi.com 3 NCP4421, NCP4422 VDD = 18 V +5 V 1 µF 90% INPUT 1 8 10% 0V 0.1 µF 0.1 µF +18 V tD1 tF tD2 tR 90% OUTPUT INPUT 2 6 7 10% 0V INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 nS CL = 2500 pF NCP4421 4 OUTPUT 5 Figure 1. Switching Time Test Circuit http://onsemi.com 4 10% 90% NCP4421, NCP4422 TYPICAL ELECTRICAL CHARACTERISTICS 220 180 200 160 22000 pF 180 22000 pF 140 120 140 120 tFALL (ns) tRISE (ns) 160 10000 pF 100 80 80 10000 pF 60 4700 pF 60 100 4700 pF 40 40 1000 pF 20 20 0 1000 pF 6 4 8 12 10 14 0 18 16 4 6 8 10 12 14 VDD Figure 2. Rise Time vs. Supply Voltage Figure 3. Fall Time vs. Supply Voltage 300 5V 5V 250 250 10 V 10 V 200 tFALL (ns) tRISE (ns) 200 150 15 V 150 15 V 100 100 50 50 0 100 1k 10 k 0 100 100 k 1k 10 k 100 k CLOAD (pF) CLOAD (pF) Figure 4. Rise Time vs. Capacitive Load Figure 5. Fall Time vs. Capacitive Load 50 90 CLOAD = 10000 pF VDD = 15 V CLOAD = 1000 pF 45 TIME (ns) 70 TIME (ns) 18 VDD 300 80 16 60 tRISE 40 tD2 35 50 tD1 40 30 tFALL 25 30 –40 0 40 80 120 4 6 8 10 12 14 16 TA (°C) VDD Figure 6. Rise and Fall Times vs. Temperature Figure 7. Propagation Delay vs. Supply Voltage http://onsemi.com 5 18 NCP4421, NCP4422 TYPICAL ELECTRICAL CHARACTERISTICS 220 180 200 160 47000 pF 2 MHz 180 63.2 kHz 140 160 10000 pF 120 ISUPPLY (mA) ISUPPLY (mA) 22000 pF 140 120 100 1.125 MHz 100 80 20 kHz 632 kHz 60 80 0.1 µF 60 4700 pF 40 40 200 kHz 20 20 0 100 1k 10 k 470 pF 0 10 100 k 100 1k CLOAD (pF) FREQUENCY (kHz) Figure 8. Supply Current vs. Capacitive Load (VDD = 18 V) Figure 9. Supply Current vs. Frequency (VDD = 18 V) 180 180 22000 pF 63.2 kHz 160 160 140 120 120 4700 pF 100 47000 pF ISUPPLY (mA) ISUPPLY (mA) 10000 pF 140 2 MHz 100 20 kHz 80 60 1.125 MHz 40 632 kHz 40 20 200 kHz 20 0 100 1k 10 k 60 0.1 µF 470 pF 0 10 100 k 100 1k CLOAD (pF) FREQUENCY (kHz) Figure 10. Supply Current vs. Capacitive Load (VDD = 12 V) Figure 11. Supply Current vs. Frequency (VDD = 12 V) 100 120 47000 pF 200 kHz 90 100 80 70 63.2 kHz 60 50 40 22000 pF 4700 pF ISUPPLY (mA) ISUPPLY (mA) 80 20 kHz 2 MHz 632 kHz 30 20 10000 pF 80 60 0.1 µF 40 20 10 0 100 470 pF 1k 10 k 100 k 0 10 100 1k CLOAD (pF) FREQUENCY (kHz) Figure 12. Supply Current vs. Capacitive Load (VDD = 6 V) Figure 13. Supply Current vs. Frequency (VDD = 6 V) http://onsemi.com 6 NCP4421, NCP4422 TYPICAL ELECTRICAL CHARACTERISTICS 120 50 110 VDD = 10 V CLOAD = 10000 pF 45 40 TIME (ns) TIME (ns) 100 90 80 70 60 tD2 50 40 30 20 tD2 35 tD1 30 tD1 10 0 1 2 25 3 4 5 6 7 8 9 20 –60 10 20 0 40 60 80 100 120 TA (°C) Figure 14. Propagation Delay vs. Input Amplitude Figure 15. Propagation Delay vs. Temperature 103 VDD = 18 V IQUIESCENT (µA) NOTE: The values on this graph represent the loss seen by the driver during a complete cycle. For the loss in a single transition, divide the stated value by 2. A•sec –20 INPUT (V) 10–6 10–7 10–8 0 6 10 8 12 14 16 INPUT = 1 102 INPUT = 0 –60 –40 18 –20 0 20 40 60 80 100 120 VDD TJ (°C) Figure 16. Crossover Energy vs. Supply Voltage Figure 17. Quiescent Supply Current vs. Temperature 6 5.5 6 5.5 5 5 4.5 4.5 TJ = 150°C 4 RDS(ON) (Ω) RDS(ON) (Ω) –40 3.5 3 2.5 2 4 3.5 3 TJ = 150°C 2.5 2 TA = 25°C 1.5 1.5 1 1 0.5 0.5 4 6 8 10 12 14 16 18 TA = 25°C 4 6 8 10 12 14 16 VDD (V) VDD (V) Figure 18. High–State Output Resistance vs. Supply Voltage Figure 19. Low–State Output Resistance vs. Supply Voltage http://onsemi.com 7 18 NCP4421, NCP4422 MARKING DIAGRAMS NCP442x 9914XY CO x X Y CO NCP442x 9914XY CO = 1 or 2 = Assembly ID Code = Year = Country of Origin ORDERING INFORMATION Device Package Temperature Range Shipping NCP4421T 5–Pin TO–220 0°C to + 70°C 50 Units/Rail NCP4421P 8–Pin PDIP –40°C to + 85°C 50 Units/Rail NCP4422T 5–Pin TO–220 0°C to + 70°C 50 Units/Rail NCP4422P 8–Pin PDIP –40°C to + 85°C 50 Units/Rail http://onsemi.com 8 NCP4421, NCP4422 Notes http://onsemi.com 9 NCP4421, NCP4422 Notes http://onsemi.com 10 NCP4421, NCP4422 PACKAGE DIMENSIONS PDIP P SUFFIX CASE 626–05 ISSUE K 8 NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 5 –B– 1 4 DIM A B C D F G H J K L M N F –A– NOTE 2 L C J –T– MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC --10 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC --10 0.030 0.040 N SEATING PLANE D M K G H 0.13 (0.005) M T A M B M TO–220 T SUFFIX CASE 314D–04 ISSUE E –T– –Q– SEATING PLANE C B E A U L J H G D DIM A B C D E G H J K L Q U 1234 5 K 5 PL 0.356 (0.014) M T Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION D DOES NOT INCLUDE INTERCONNECT BAR (DAMBAR) PROTRUSION. DIMENSION D INCLUDING PROTRUSION SHALL NOT EXCEED 10.92 (0.043) MAXIMUM. M http://onsemi.com 11 INCHES MIN MAX 0.572 0.613 0.390 0.415 0.170 0.180 0.025 0.038 0.048 0.055 0.067 BSC 0.087 0.112 0.015 0.025 0.990 1.045 0.320 0.365 0.140 0.153 0.105 0.117 MILLIMETERS MIN MAX 14.529 15.570 9.906 10.541 4.318 4.572 0.635 0.965 1.219 1.397 1.702 BSC 2.210 2.845 0.381 0.635 25.146 26.543 8.128 9.271 3.556 3.886 2.667 2.972 NCP4421, NCP4422 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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