SM05T1GSeries, SZSM05T1G Transient Voltage Suppressor Diode Array SOT−23 Dual Common Anode Diodes for ESD Protection http://onsemi.com These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 1 Specification Features: SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range − 5.0 V to 24 V Peak Power − 300 Watt (8 X 20 ms) Low Leakage Flammability Rating UL 94 V−0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices* Mechanical Characteristics: CASE: Void-Free, Transfer-Molded, Thermosetting Plastic Case FINISH: Corrosion Resistant Finish, Easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications Available in 8 mm Tape and Reel Use the Device Number to Order the 7 Inch/3,000 Unit Reel Replace the “T1” with “T3” in the Device Number to Order the 13 Inch/10,000 Unit Reel *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 February, 2012 − Rev. 6 SOT−23 CASE 318 STYLE 12 1 3 2 PIN 1. CATHODE 2. CATHODE 3. ANODE MARKING DIAGRAM xxM MG G 1 xxM = Device Code xx = 05, 12, 15, 24, 36 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† SM05T1G SOT−23 (Pb−Free) 3,000/Tape & Reel SZSM05T1G SOT−23 (Pb−Free) 3,000/Tape & Reel SM12T1G SOT−23 (Pb−Free) 3,000/Tape & Reel SM15T1G SOT−23 (Pb−Free) 3,000/Tape & Reel SM24T1G SOT−23 (Pb−Free) 3,000/Tape & Reel SM36T1G SOT−23 (Pb−Free) 3,000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: SM05T1/D SM05T1G Series, SZSM05T1G MAXIMUM RATINGS Rating Peak Power Dissipation @ 20 ms (Note 1) @ TL 25C Symbol Value Ppk 300 Unit W IEC 61000−4−2 (ESD) Air Contact kV 15 8.0 IEC 61000−4−4 (EFT) 40 IEC 61000−4−5 (Lightening) Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient 12 A 225 1.8 556 mW mW/C C/W RqJA 300 2.4 417 mW mW/C C/W TJ, Tstg − 55 to +150 C TL 260 C PD RqJA Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient PD Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non−repetitive current pulse per Figure 3 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina NOTE: Other voltages may be available upon request ELECTRICAL CHARACTERISTICS UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT QVBR I IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT VC VBR VRWM Test Current Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK V IR VF IT IPP Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VBR, Breakdown Voltage VRWM Max IPP (Note 4) Typical Capacitance (pF) Max mA (Volts) (Amps) Pin 1 to 3 @ 0 Volts 6.2 7.3 1.0 9.8 17 225 13.3 15.75 1.0 19 12 95 16.7 19.6 1.0 24 10 100 1.0 26.7 31.35 1.0 43 5.0 60 1.0 40.0 46.95 1.0 60 4.0 45 Device* Device Marking SM05T1G 05M 5 10 SM12T1G 12M 12 1.0 SM15T1G 15M 15 1.0 SM24T1G 24M 24 SM36T1G 36M 36 (Volts) IT (Volts) IR @ VRWM VC @ IPP = 1 Amp (mA) Min 4. 8 20 ms pulse waveform per Figure 3 *Include SZ-prefix devices where applicable. http://onsemi.com 2 SM05T1G Series, SZSM05T1G TYPICAL CHARACTERISTICS 300 PD, POWER DISSIPATION (mW) PPP, PEAK PULSE POWER (kW) 10 1 0.1 0.01 0.1 1 100 10 tp, PULSE DURATION (ms) 250 150 100 FR−5 BOARD 50 0 1000 ALUMINA SUBSTRATE 200 0 Figure 1. Non−Repetitive Peak Pulse Power versus Pulse Time C, CAPACITANCE (pF) 70 60 50 HALF VALUE IRSM/2 @ 20 ms 40 30 tP 20 75 100 125 TEMPERATURE (C) 150 175 250 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 50 Figure 2. Steady State Power Derating Curve PEAK VALUE IRSM @ 8 ms tr 90 210 170 130 10 0 0 20 40 60 90 80 0 1 t, TIME (ms) 2 3 BIAS VOLTAGE (VOLTS) 100 90 80 70 60 50 40 30 20 10 0 0 4 Figure 4. Typical Diode Capacitance (SM05) Figure 3. 8 20 ms Pulse Waveform C, CAPACITANCE (pF) % OF PEAK PULSE CURRENT 100 25 1 5 8 BIAS VOLTAGE (VOLTS) 12 Figure 5. Typical Diode Capacitance (SM12) http://onsemi.com 3 5 SM05T1G Series, SZSM05T1G TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT−23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND SM05T1G Series Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS CPU I/O SM05T1 Series CLOCK CONTROL BUS GND SM05T1G Series http://onsemi.com 4 SM05T1G Series, SZSM05T1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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