Femtocell

Fact Sheet
Medium Power PAs and
LNAs for Femtocells
Overview
Freescale RF femtocell solutions provide high-bandwidth, high-linearity optimized MMICs
for LTE (FDD/TDD) and W-CDMA SOHO femtocell base station applications. Our MMICs
comprise linear amplifiers and low noise amplifiers. Based on InGaP HBT technology, the
linear amplifiers contain active bias networks for excellent over temperature performance and
require minimal impedance matching for ease of use over a broad frequency range. The GaAs
E-pHEMT low noise amplifiers provide excellent noise figures for optimum receiver sensitivity.
Our Comprehensive Solution
We offer complete femtocell solutions based on the QorlQ Qonverge BSC913X-based
development platform. A dual band RF module, designed by Benetel, featuring Freescale linear
amplifiers and low noise amplifiers is available (see block diagram). This module is capable of
operating over all UMTS frequency bands of interest (700–1000 MHz and 1700–2700 MHz),
features antenna port output power of 13 dBm in a 2 × 2 MIMO configuration and is designed
with a JESD207 interface to the BSC9131 reference design board. A high-performance 3G/4G
transceiver chip completes the end-to-end development system for LTE (FDD/TDD) and
W-CDMA air interfaces.
RF Module
Block
RF Module
Block Diagram
RX SAW
Diagram
MML20211H
Freescale
LNAs
MML09211H
sp2t
MMZ09312B
Duplexer
To antenna 2
Freescale
Power Amplifiers
TX SAW
MMZ25332B
LTE-FDD/
TDD and
WCDMA
Transceiver
Duplexer
sp2t
sp3t
MMZ09312B
Freescale
Power Amplifiers
TX SAW
Duplexer
To antenna 1
sp2t
Duplexer
MMZ25332B
RX SAW
MML20211H
Freescale
LNAs
MML09211H
GSM sniff
sp2t
High Performance Amplifiers
Part Number
Frequency Test Frequency
Range (MHz)
(MHz)
Small Signal
Gain (dB)
Gain
Stages
P1dB
(dBm)
OIP3
Supply
(dBm) Voltage (V)
Supply
Current (mA)
Package
MMZ09312B(1)
400–1000
900
31.7
2
29.6
42
3–5
74
QFN 3 × 3
MMA20312BV
1800–2200
2140
27.2
2
30.5
44.5
3–5
70
QFN 3 × 3
MMA20312B
1800–2200
2140
27.2
2
30.5
44.5
5
70
QFN 3 × 3
MMA25312B(1)
2300–2700
2500
26
2
31
40
3–5
124
QFN 3 × 3
MMZ25332B(1)
1800–2800
2500
26.5
2
33
48
3–5
390
QFN 3 × 3
Small Signal
Gain (dB)
Noise
Figure
(dB)
P1dB
(dBm)
Supply
Current (mA)
Package
DFN 2 × 2
(1)
On chip power detector
Low Noise Amplifiers
Part Number
Frequency Test Frequency
Range (MHz)
(MHz)
OIP3
Supply
(dBm) Voltage (V)
MML20211H
1400–2800
2140
18.6
0.65
21.3
33
5
60
MML09211H
400–1400
900
21.3
0.52
22
32.6
5
60
DFN 2 × 2
MML09212H
400–1400
900
37.5
0.52
22.8
37
5
150
QFN 3 × 3
MML20242H
1400–2800
2140
32.5
0.7
24
39.5
5
160
QFN 3 × 3
MML09231H
700–1400
900
17.2
0.36
24.5
37.4
5
55
DFN 2 × 2
Freescale offers comprehensive global in-region support to help you with your design.
Contact your local Freescale sales office or authorized Freescale distributor for additional
information and sample availability.
LTE-FDD/TDD and W-CDMA (HSPA+) Capable RF Module
For more information on the RF module or to order, visit
freescale.com/BSC913XRF
For more information on the RF low power portfolio, visit
freescale.com/RFlowpower
For more information on the QorIQ Qonverge platform, visit
freescale.com/QorIQQonverge
Freescale, the Freescale logo and QorlQ Qonverge are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off.
All other product or service names are the property of their respective owners. © 2012, 2014 Freescale Semiconductor, Inc.
Document Number: RFFEMTOCELLFS REV 1 12/2014