Freescale Semiconductor Technical Data Document Number: MMA25312B Rev. 0, 9/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMA25312BT1 High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable for applications with frequencies from 2300 to 2700 MHz using simple external matching components with a 3 to 5 volt supply. 2300--2700 MHz, 26 dB 31 dBm InGaP HBT Features • Frequency: 2300--2700 MHz • P1dB: 31 dBm @ 2500 MHz • Power Gain: 26 dB @ 2500 MHz • OIP3: 40 dBm @ 2500 MHz • Active Bias Control (On--chip) • Single 3 to 5 Volt Supply • Single--ended Power Detector • Cost--effective QFN Surface Mount Package • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel. Table 1. Typical CW Performance (1) CASE 2131--01 QFN 3×3 PLASTIC Table 2. Maximum Ratings Characteristic Symbol 2300 MHz 2500 MHz 2700 MHz Unit Small--Signal Gain (S21) Gp 26 26 24.5 dB Input Return Loss (S11) IRL --14 --12 --12 dB Output Return Loss (S22) ORL --11 --13 --15 dB Power Output @ 1dB Compression P1dB 30 31 29.8 dBm Rating Symbol Value Unit Supply Voltage VCC 6 V Supply Current ICC 550 mA RF Input Power Pin 30 dBm Storage Temperature Range Tstg --65 to +150 °C Junction Temperature (2) TJ 150 °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25°C, 50 ohm system, CW Application Circuit Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 91°C, VCC1 = VCC2 = VBIAS = 5 Vdc Symbol Value (3) Unit RθJC 92 °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMA25312BT1 1 Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 2500 MHz, TA = 25°C, 50 ohm system, in Freescale CW Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 24.5 26 — dB Input Return Loss (S11) IRL — --12 — dB Output Return Loss (S22) ORL — --13 — dB Power Output @ 1dB Compression P1dB — 31 — dBm Third Order Output Intercept Point, Two--Tone CW OIP3 — 40 — dBm Noise Figure NF — 3.8 — dB Supply Current (1) ICQ 110 124 138 mA Supply Voltage (1) VCC — 5 — V Table 5. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22--A114) 2 Machine Model (per EIA/JESD 22--A115) A Charge Device Model (per JESD 22--C101) IV Table 6. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 °C 1. For reliable operation, the junction temperature should not exceed 150°C. VBA2 VBA1 VCC1 VCC1 VBA2 VCC1 VCC1 RFout BIAS CIRCUIT RFout VBIAS VCC2 12 11 10 VBA1 1 9 RFout VBIAS 2 8 RFout RFin 3 7 VCC2 4 5 6 N.C. N.C. PDET RFin PDET Figure 1. Functional Block Diagram Figure 2. Pin Connections MMA25312BT1 2 RF Device Data Freescale Semiconductor, Inc. VBIAS VCC1 L2 C1 R2 R1 12 1 Z2 11 C2 C7 10 9 BIAS CIRCUIT C5 Z1 8 2 RF OUTPUT C13 C11 RF INPUT 7 3 C8 DETECTOR 4 5 VCC2 L3 C14 6 PDET C9 Z1 Z2 0.140″ x 0.030″ Microstrip 0.073″ x 0.030″ Microstrip Figure 3. MMA25312BT1 Test Circuit Schematic — 2500 MHz, 5 Volt Operation Table 7. MMA25312BT1 Test Circuit Component Designations and Values — 2500 MHz, 5 Volt Operation Part Description C1, C2 1 μF Chip Capacitors C3, C4, C6, C10, C12, C15 Components Not Placed C5, C9 C7 Part Number Manufacturer GRM155R61A105KE15 Murata 100 pF Chip Capacitors GRM1555C1H101JA01 Murata 8.2 pF Chip Capacitor 04023J8R2BBS AVX C8, C13 22 pF Chip Capacitors 04023J22R0BBS AVX C11 1.5 pF Chip Capacitor 04023J1R5BBS AVX C14 4.7 μF Chip Capacitor GRM188R60J475KE19D Murata L2 1.2 nH Chip Inductor LL1608-FH1N2S TOKO L3 22 nH Chip Inductor LL1608-FH22N0S TOKO R1 430 Ω, 1/16 W Chip Resistor RC0402JR-07430RL Yageo R2 1.6 kΩ, 1/16 W Chip Resistor RC0402JR-071K60L Yageo R3 Component Not Placed PCB 0.014″, εr = 3.7 FR408 Isola Note: Component numbers C3, C4, C6, C10, C12, C15 and R3 are labeled on board but not placed. Note: Component L1 intentionally omitted. MMA25312BT1 RF Device Data Freescale Semiconductor, Inc. 3 VCC1 VBIAS(1) C2 C1 R3* C3* L2 R1 RFIN C6* C4* R2 RFOUT C7 C5 C12* C11 C13 C8 C10* C9 C14 L3 C15* QFN 3x3--12N Rev. 0 VCC2 VDECT (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C3*, C4*, C6*, C10*, C12*, C15* and R3* are labeled on board but not placed. Figure 4. MMA25312BT1 Test Circuit Component Layout — 2500 MHz, 5 Volt Operation Table 7. MMA25312BT1 Test Circuit Component Designations and Values — 2500 MHz, 5 Volt Operation Part Description C1, C2 1 μF Chip Capacitors C3, C4, C6, C10, C12, C15 Components Not Placed C5, C9 C7 Part Number Manufacturer GRM155R61A105KE15 Murata 100 pF Chip Capacitors GRM1555C1H101JA01 Murata 8.2 pF Chip Capacitor 04023J8R2BBS AVX C8, C13 22 pF Chip Capacitors 04023J22R0BBS AVX C11 1.5 pF Chip Capacitor 04023J1R5BBS AVX C14 4.7 μF Chip Capacitor GRM188R60J475KE19D Murata L2 1.2 nH Chip Inductor LL1608-FH1N2S TOKO L3 22 nH Chip Inductor LL1608-FH22N0S TOKO R1 430 Ω, 1/16 W Chip Resistor RC0402JR-07430RL Yageo R2 1.6 kΩ, 1/16 W Chip Resistor RC0402JR-071K60L Yageo R3 Component Not Placed PCB 0.014″, εr = 3.7 FR408 Isola Note: Component L1 intentionally omitted. (Component Designations and Values table repeated for reference.) MMA25312BT1 4 RF Device Data Freescale Semiconductor, Inc. VBIAS VCC1 L2 C1 R2 R1 12 1 Z2 11 C2 C7 10 9 BIAS CIRCUIT C5 Z1 8 2 RF OUTPUT C13 C11 RF INPUT 7 3 C8 DETECTOR 4 5 VCC2 L3 C14 6 PDET C9 Z1 Z2 0.140″ x 0.030″ Microstrip 0.073″ x 0.030″ Microstrip Figure 5. MMA25312BT1 Test Circuit Schematic — 2500 MHz, 3.3 Volt Operation Table 8. MMA25312BT1 Test Circuit Component Designations and Values — 2500 MHz, 3.3 Volt Operation Part Description C1, C2 1 μF Chip Capacitors C3, C4, C6, C10, C12, C15 Components Not Placed C5, C9 C7 Part Number Manufacturer GRM155R61A105KE15 Murata 100 pF Chip Capacitors GRM1555C1H101JA01 Murata 8.2 pF Chip Capacitor 04023J8R2BBS AVX C8, C13 22 pF Chip Capacitors 04023J22R0BBS AVX C11 1.5 pF Chip Capacitor 04023J1R5BBS AVX C14 4.7 μF Chip Capacitor GRM188R60J475KE19D Murata L2 1.2 nH Chip Inductor LL1608-FH1N2S TOKO L3 22 nH Chip Inductor LL1608-FH22N0S TOKO R1 100 Ω, 1/16 W Chip Resistor RC0402JR-07100RL Yageo R2 470 Ω, 1/16 W Chip Resistor RC0402JR-07470RL Yageo R3 Component Not Placed PCB 0.014″, εr = 3.7 FR408 Isola Note: Component numbers C3, C4, C6, C10, C12, C15 and R3 are labeled on board but not placed. Note: Component L1 intentionally omitted. MMA25312BT1 RF Device Data Freescale Semiconductor, Inc. 5 VCC1 VBIAS(1) C2 C1 R3* C3* L2 R1 RFIN C6* C4* R2 RFOUT C7 C5 C12* C11 C13 C8 C10* C9 C14 L3 C15* QFN 3x3--12N Rev. 0 VCC2 VDECT (1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]. Note: Component numbers C3*, C4*, C6*, C10*, C12*, C15* and R3* are labeled on board but not placed. Figure 6. MMA25312BT1 Test Circuit Component Layout — 2500 MHz, 3.3 Volt Operation Table 8. MMA25312BT1 Test Circuit Component Designations and Values — 2500 MHz, 3.3 Volt Operation Part Description C1, C2 1 μF Chip Capacitors C3, C4, C6, C10, C12, C15 Components Not Placed C5, C9 C7 Part Number Manufacturer GRM155R61A105KE15 Murata 100 pF Chip Capacitors GRM1555C1H101JA01 Murata 8.2 pF Chip Capacitor 04023J8R2BBS AVX C8, C13 22 pF Chip Capacitors 04023J22R0BBS AVX C11 1.5 pF Chip Capacitor 04023J1R5BBS AVX C14 4.7 μF Chip Capacitor GRM188R60J475KE19D Murata L2 1.2 nH Chip Inductor LL1608-FH1N2S TOKO L3 22 nH Chip Inductor LL1608-FH22N0S TOKO R1 100 Ω, 1/16 W Chip Resistor RC0402JR-07100RL Yageo R2 470 Ω, 1/16 W Chip Resistor RC0402JR-07470RL Yageo R3 Component Not Placed PCB 0.014″, εr = 3.7 FR408 Isola Note: Component L1 intentionally omitted. (Component Designations and Values table repeated for reference.) MMA25312BT1 6 RF Device Data Freescale Semiconductor, Inc. 3.00 0.70 0.30 2.00 3.40 0.50 1.6 x 1.6 Solder Pad with Thermal Via Structure Figure 7. PCB Pad Layout for QFN 3×3 MA04 YWZ Figure 8. Product Marking MMA25312BT1 RF Device Data Freescale Semiconductor, Inc. 7 PACKAGE DIMENSIONS MMA25312BT1 8 RF Device Data Freescale Semiconductor, Inc. MMA25312BT1 RF Device Data Freescale Semiconductor, Inc. 9 MMA25312BT1 10 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier and MMIC Biasing Software • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Sept. 2012 Description • Initial Release of Data Sheet MMA25312BT1 RF Device Data Freescale Semiconductor, Inc. 11 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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