Freescale Semiconductor Technical Data Document Number: MML25231HT1 Rev. 0, 4/2016 Enhancement Mode pHEMT Technology (E--pHEMT) MML25231HT1 Low Noise Amplifier The MML25231H is a single--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front--end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 1000 to 4000 MHz such as CDMA, W--CDMA and LTE. 1000–4000 MHz, 15.2 dB 23 dBm, 0.36 NF E--pHEMT LNA Features Ultra Low Noise Figure: 0.39 dB @ 1900 MHz, 0.54 dB @ 2500 MHz High Linearity: 34.7 dBm OIP3 @ 1900 MHz, 35.2 dBm @ 2500 MHz Frequency: 1000–4000 MHz Unconditionally Stable Over Temperature P1dB: 22.6 dBm @ 1900 MHz, 22.5 dBm @ 2500 MHz Small--Signal Gain: 17.2 dB @ 1900 MHz, 15.2 dB @ 2500 MHz Single 5 V Supply Power--down Pin Supply Current: 60 mA (adjustable externally) 50 Ohm Operation (some external matching required) Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package Table 1. Typical Performance (1) 1750 Characteristic Symbol MHz Table 2. Maximum Ratings 1920 2350 2600 3600 MHz MHz MHz MHz Unit 0.39 DFN 2 2 Noise Figure NF 0.38 0.50 0.57 0.98 dB Input Return Loss (S11) IRL –12.0 –12.8 –15.1 –15.9 –10.7 dB Output Return Loss (S22) ORL –14.4 –14.4 –14.8 –15.3 –20.7 dB Small-Signal Gain (S21) GP 17.8 17.2 15.6 14.8 11.7 Power Output @ 1dB Compression P1dB 22.9 22.6 22.6 22.5 22.8 dBm Third Order Input Intercept Point IIP3 16.5 17.5 19.3 20.7 25.1 dBm Third Order Output Intercept Point OIP3 34.4 34.7 35.0 35.7 37.0 dBm Rating Symbol Value Unit Supply Voltage VDD 6 V Supply Current IDD 150 mA RF Input Power Pin 20 dBm Storage Temperature Range Tstg –65 to +150 C Junction Temperature TJ 175 C dB 1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 87C, 5 Vdc, 65 mA, no RF applied Symbol Value (3) Unit RJC 134 C/W 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Freescale Semiconductor, Inc., 2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MML25231HT1 1 Table 4. Electrical Characteristics (VDD = 5 Vdc, 2600 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 14.2 14.8 — dB Input Return Loss (S11) IRL — –16.0 — dB Output Return Loss (S22) ORL — –15.3 — dB Power Output @ 1dB Compression P1dB — 22.5 — dBm Third Order Input Intercept Point IIP3 — 20.7 — dBm Reverse Isolation (S12) Characteristic |S12| — –20.9 — dB Noise Figure NF — 0.56 — dB Supply Current (1) IDD 55 60 65 mA Supply Voltage VDD — 5 — V Supply Current in Power Down Mode IPD — 2.8 — mA Logic Voltage for Power Down (2) Input High Voltage Input Low Voltage VPD 1.8 0 — — VDD 0.4 V Table 5. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22--A114) 1C Machine Model (per EIA/JESD 22--A115) A Charge Device Model (per JESD 22--C101) IV Table 6. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 1 260 C Per JESD22--A113, IPC/JEDEC J--STD--020 Table 7. Ordering Information Device Tape and Reel Information MML25231HT1 Package T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel DFN 2 2 1. DC current measured with no RF signal applied. 2. Limits derived from device characterization. Table 8. Functional Pin Description Pin Number Pin Function 1 VBIAS 2 RFin 3 No Connection 4 No Connection 5 No Connection 6 No Connection 7 RFout/Supply Voltage 8 Power Down (Active High) VBIAS 1 RFin 2 N.C. 3 N.C. 4 GND 8 Power Down 7 RFout/VDD 6 N.C. 5 N.C. (Top View) Note: Exposed backside of the package is DC and RF ground. N.C. can be connected to GND. Figure 1. Pin Connections MML25231HT1 2 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2500 MHz VDD R2 POWER DOWN C3 R1 C5 BIAS CIRCUIT 1 RF INPUT C4 8 RF OUTPUT L3 L2 L1 2 C6 7 C2 C1 3 N.C. N.C. 6 4 N.C. N.C. 5 Figure 2. MML25231HT1 Test Circuit Schematic Table 9. MML25231HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 82 pF Chip Capacitor GRM1555C1H820JA01 Murata C2 9 pF Chip Capacitor GJM1555C1H9R0CB01 Murata C3 10 pF Chip Capacitor GJM1555C1H100JB01 Murata C4 0.01 F Chip Capacitor GRM155R71E103KA01 Murata C5 1000 pF Chip Capacitor GRM155R71H102KA01 Murata C6 0.4 pF Chip Capacitor 04023U0R4BBW AVX L1 1.0 nH Chip Inductor 0402CS--1N0XJLW Coilcraft L2 68 nH Chip Inductor 0402HPH--68NXGL Coilcraft L3 40 nH Chip Inductor 0402HP--40NXGL Coilcraft R1 1800 , 1/4 W Chip Resistor RK73B2ATTD182J KOA R2 0 , 1.5 A Chip Resistor CR0402--J/--000GLFCT--ND Bourns PCB Rogers RO4350B, 0.010, r = 3.66 M56197 MTL MML25231HT1 RF Device Data Freescale Semiconductor, Inc. 3 50 OHM APPLICATION CIRCUIT: 2500 MHz VDD POWER DOWN R2 M56197 C3 DFN 2x2--8N Rev. 0 R1 C5 C4 L3 C2 RFIN C6 L1 C1 L2 RFOUT PCB actual size: 0.75 0.86. NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply decoupling and grounding are employed. Figure 3. MML25231HT1 Test Circuit Component Layout Table 9. MML25231HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 82 pF Chip Capacitor GRM1555C1H820JA01 Murata C2 9 pF Chip Capacitor GJM1555C1H9R0CB01 Murata C3 10 pF Chip Capacitor GJM1555C1H100JB01 Murata C4 0.01 F Chip Capacitor GRM155R71E103KA01 Murata C5 1000 pF Chip Capacitor GRM155R71H102KA01 Murata C6 0.4 pF Chip Capacitor 04023U0R4BBW AVX L1 1.0 nH Chip Inductor 0402CS--1N0XJLW Coilcraft L2 68 nH Chip Inductor 0402HPH--68NXGL Coilcraft L3 40 nH Chip Inductor 0402HP--40NXGL Coilcraft R1 1800 , 1/4 W Chip Resistor RK73B2ATTD182J KOA R2 0 , 1.5 A Chip Resistor CR0402--J/--000GLFCT--ND Bourns PCB Rogers RO4350B, 0.010, r = 3.66 M56197 MTL (Test Circuit Component Designations and Values repeated for reference.) MML25231HT1 4 RF Device Data Freescale Semiconductor, Inc. –6 35 –16 –8 30 –18 –10 25 –20 85C –12 S12 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS: 2500 MHz –14 –16 VDD = 5 Vdc 1500 2000 2500 3000 3500 –30 0 1000 4000 1500 2000 2500 3000 3500 f, FREQUENCY (MHz) Figure 4. S11 versus Frequency and Temperature Figure 5. S12 versus Frequency and Temperature –12 21 20 –14 4000 85C –40C 16 15 14 85C S22 (dB) –16 18 17 25C --40C –18 25C –20 –22 13 12 10 1000 VDD = 5 Vdc f, FREQUENCY (MHz) 19 S21 (dB) 15 –24 22 11 25C 20 –22 5 –28 –18 –20 1000 85C 10 –26 25C –40C –40C –24 VDD = 5 Vdc 1500 2000 2500 3000 3500 4000 –26 1000 VDD = 5 Vdc 1500 2000 2500 3000 3500 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 6. S21 versus Frequency and Temperature Figure 7. S22 versus Frequency and Temperature 4000 MML25231HT1 RF Device Data Freescale Semiconductor, Inc. 5 1.6 17 35 1.4 30 16 25 1.2 Gps, POWER GAIN (dB) NF, NOISE FIGURE (dB) 50 OHM TYPICAL CHARACTERISTICS: 2500 MHz 85C 1 0.8 25C 0.6 –40C 0.2 1000 VDD = 5 Vdc 1500 2000 25C 10 2500 3000 3500 VDD = 5 Vdc, f = 2500 MHz, CW 4000 10 12 14 16 18 20 22 f, FREQUENCY (MHz) Pout, OUTPUT POWER (dBm) Figure 8. Noise Figure versus Frequency and Temperature Figure 9. Power Gain versus Output Power and Temperature 17 1920 MHz 16 2350 MHz 15 2600 MHz 14 13 3600 MHz 12 f (MHz) Temperature () Gain (dB) P1dB (dBm) 1750 25 17.86 22.9 1750 –40 18.09 23 1750 85 17.68 22.2 1920 25 17.16 22.6 1920 –40 17.37 23 1920 85 16.98 22.25 11 2350 25 15.64 22.6 10 2350 –40 15.84 22.9 2350 85 15.47 22.2 2500 25 15.13 22.5 2500 –40 15.38 22.75 2500 85 14.96 22.18 2600 25 14.89 22.45 2600 –40 15.11 22.75 2600 85 14.74 22.3 3600 25 11.83 22.8 3600 –40 12 23 3600 85 11.67 22.4 10 12 14 24 Power Gain versus Temperature 1750 MHz 18 Gps, POWER GAIN (dB) 85C 15 14 12 0 VDD = 5 Vdc, CW 19 15 20 13 5 0.4 20 –40C 16 18 20 22 Pout, OUTPUT POWER (dBm) Figure 10. Power Gain versus Output Power and Frequency 24 MML25231HT1 6 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS: 2500 MHz 90 35 100 35 VDD = 5 Vdc, f = 2500 MHz, CW 25 80 85C 20 75 15 25C 70 10 65 5 3600 MHz 90 25 85 20 80 15 75 2600 MHz 2350 MHz 10 1920 MHz 70 1750 MHz 5 65 60 0 60 0 10 12 14 16 18 20 22 24 10 12 14 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 11. Drain Current versus Output Power and Temperature Figure 12. Drain Current versus Output Power and Frequency 35 22 –12 35 IMD3, THIRD ORDER INTERMODULATION DISTORTION (dBc) IIP3, THIRD ORDER INPUT INTERCEPT POINT (dBm) VDD = 5 Vdc, CW 95 30 –40C IDD, DRAIN CURRENT (mA) IDD, DRAIN CURRENT (mA) 30 85 –40C 30 20 85C 25 18 20 16 15 25C 14 10 12 5 VDD = 5 Vdc, f = 2500 MHz, CW 0 10 6 8 10 12 14 –18 30 –24 25 –30 85C 25C 20 –36 –40C –42 15 –48 10 –54 5 –60 VDD = 5 Vdc, f = 2500 MHz, CW –66 0 16 18 20 22 8 6 10 Pout, OUTPUT POWER (dBm) Figure 13. Third Order Input Intercept Point versus Output Power and Temperature IIP3, THIRD ORDER INPUT INTERCEPT POINT (dBm) 12 14 16 18 20 22 Pout, OUTPUT POWER (dBm) Figure 14. Third Order Intermodulation Distortion versus Output Power and Temperature 30 35 VDD = 5 Vdc, CW 27 30 3600 MHz 25 24 21 20 2350 MHz 2600 MHz 15 18 15 10 1750 MHz 1920 MHz 5 12 09 6 8 10 12 14 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Figure 15. Third Order Input Intercept Point versus Output Power and Frequency MML25231HT1 RF Device Data Freescale Semiconductor, Inc. 7 50 OHM TYPICAL CHARACTERISTICS: 2500 MHz IMD3, THIRD ORDER INTERMODULATION DISTORTION (dBc) –10 35 30 –20 25 –30 20 –40 15 1750 MHz 1920 MHz –50 10 2600 MHz 2350 MHz 3600 MHz –60 5 VDD = 5 Vdc, CW –70 0 6 8 10 12 14 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Figure 16. Third Order Intermodulation Distortion versus Output Power IMD3 and IIP3 versus Temperature f (GHz) Temperature () Pout (dBm) Gain (dB) IIP3 (dBm) IMD3 (dBc) 1750 25 13.9 17.9 16.5 –47.0 1750 –40 14.1 18.1 16.7 –47.4 1750 85 13.7 17.7 16.0 –46.0 1920 25 14.2 17.2 17.6 –47.1 1920 –40 14.4 17.4 17.7 –47.4 1920 85 14.0 17.0 17.0 –47.9 2350 25 13.7 15.7 19.3 –48.7 2350 –40 13.9 15.9 19.6 –49.1 2350 85 13.5 15.5 19.2 –47.3 2500 25 14.2 15.2 20.0 –48.1 2500 –40 14.4 15.4 20.2 –48.5 2500 85 14.0 15.0 19.7 –47.3 2600 25 13.9 14.9 20.7 –49.5 2600 –40 14.2 15.2 20.9 –49.9 2600 85 13.8 14.8 20.4 –48.7 3600 25 13.9 11.9 25.1 –52.3 3600 –40 14.1 12.1 25.4 –52.9 3600 85 13.7 11.7 25.0 –52.0 MML25231HT1 8 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2000 MHz VDD R2 POWER DOWN C3 R1 C5 BIAS CIRCUIT 1 RF INPUT C4 8 RF OUTPUT L3 L2 L1 2 7 C2 C1 3 N.C. N.C. 6 4 N.C. N.C. 5 Figure 17. MML25231HT1 Test Circuit Schematic Table 10. MML25231HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 82 pF Chip Capacitor GRM1555C1H820JA01 Murata C2 12 pF Chip Capacitor GRM1555C1H120GA01 Murata C3 10 pF Chip Capacitor GJM1555C1H100JB01 Murata C4 0.01 F Chip Capacitor GRM155R71E103KA01 Murata C5 1000 pF Chip Capacitor GRM155R71H102KA01 Murata L1 1.0 nH Chip Inductor 0402CS-1N0XJLW Coilcraft L2 68 nH Chip Inductor 0402HPH-68NXGL Coilcraft L3 40 nH Chip Inductor 0402HP-40NXGL Coilcraft R1 1800 , 1/4 W Chip Resistor RK73B2ATTD182J KOA R2 0 , 1.5 A Chip Resistor CR0402-J/-000GLFCT-ND Bourns PCB Rogers RO4350B, 0.010, r = 3.66 M56197 MTL MML25231HT1 RF Device Data Freescale Semiconductor, Inc. 9 50 OHM APPLICATION CIRCUIT: 2000 MHz VDD POWER DOWN M56197 R2 C3 DFN 2x2--8N Rev. 0 R1 C5 C4 L3 C1 L1 L2 C2 RFIN RFOUT PCB actual size: 0.75 0.86. NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply decoupling and grounding are employed. Figure 18. MML25231HT1 Test Circuit Component Layout Table 10. MML25231HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 82 pF Chip Capacitor GRM1555C1H820JA01 Murata C2 12 pF Chip Capacitor GRM1555C1H120GA01 Murata C3 10 pF Chip Capacitor GJM1555C1H100JB01 Murata C4 0.01 F Chip Capacitor GRM155R71E103KA01 Murata C5 1000 pF Chip Capacitor GRM155R71H102KA01 Murata L1 1.0 nH Chip Inductor 0402CS-1N0XJLW Coilcraft L2 68 nH Chip Inductor 0402HPH-68NXGL Coilcraft L3 40 nH Chip Inductor 0402HP-40NXGL Coilcraft R1 1800 , 1/4 W Chip Resistor RK73B2ATTD182J KOA R2 0 , 1.5 A Chip Resistor CR0402-J/-000GLFCT-ND Bourns PCB Rogers RO4350B, 0.010, r = 3.66 M56197 MTL (Test Circuit Component Designations and Values repeated for reference.) MML25231HT1 10 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS: 2000 MHz –6 35 –16 –7 30 –18 –8 25 –20 S12 (dB) S11 (dB) –9 –10 –11 5 –28 VDD = 5 Vdc 1500 2000 2500 3000 3500 –30 0 1000 4000 2000 2500 3000 3500 Figure 19. S11 versus Frequency Figure 20. S12 versus Frequency –14 21 20 –15 19 –16 18 17 –17 16 15 14 13 4000 –18 –19 –20 12 10 1000 1500 f, FREQUENCY (MHz) 22 11 VDD = 5 Vdc f, FREQUENCY (MHz) S22 (dB) S21 (dB) –14 1000 15 –24 10 –26 –12 –13 20 –22 –21 VDD = 5 Vdc 1500 2000 2500 3000 3500 4000 –22 1000 VDD = 5 Vdc 1500 2000 2500 3000 3500 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 21. S21 versus Frequency Figure 22. S22 versus Frequency 4000 MML25231HT1 RF Device Data Freescale Semiconductor, Inc. 11 50 OHM TYPICAL CHARACTERISTICS: 2000 MHz 20 35 1.6 Gps, POWER GAIN (dB) NF, NOISE FIGURE (dB) 1.4 1.2 1 0.8 0.6 1750 MHz 16 20 15 15 14 2350 MHz 3000 10 0 3500 4000 10 12 14 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Figure 23. Noise Figure versus Frequency Figure 24. Power Gain versus Output Power and Frequency 3600 MHz 2600 MHz 90 25 2500 MHz 85 20 80 15 75 2350 MHz 1920 MHz 1750 MHz 10 70 5 65 60 0 10 3600 MHz f, FREQUENCY (MHz) VDD = 5 Vdc, CW 95 30 IDD, DRAIN CURRENT (mA) 2500 IIP3, THIRD ORDER INPUT INTERCEPT POINT (dBm) 100 35 2000 2500 MHz 2600 MHz 12 5 11 VDD = 5 Vdc 1500 1920 MHz 13 10 0.4 0.2 1000 VDD = 5 Vdc, CW 19 30 18 25 17 12 14 16 18 20 22 24 28 35 26 30 24 25 22 3600 MHz 2500 MHz 20 20 18 15 16 2600 MHz 2350 MHz 1750 MHz 14 10 12 5 10 1920 MHz VDD = 5 Vdc, CW 08 6 8 10 12 14 16 18 20 22 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 25. Drain Current versus Output Power and Frequency Figure 26. Third Order Input Intercept Point versus Output Power and Frequency 24 IMD3, THIRD ORDER INTERMODULATION DISTORTION (dBc) –10 35 VDD = 5 Vdc, CW 30 –20 25 –30 20 –40 15 2350 MHz 1750 MHz 1920 MHz –50 10 2600 MHz –60 5 0 –70 2500 MHz 3600 MHz 6 8 10 12 14 16 18 20 22 24 Pout, OUTPUT POWER (dBm) Figure 27. Third Order Intermodulation Distortion versus Output Power and Frequency MML25231HT1 12 RF Device Data Freescale Semiconductor, Inc. 2.00 0.80 0.30 0.50 1.6 0.8 solder pad with thermal via structure. All dimensions in mm. 1.20 0.60 2.40 Figure 28. PCB Pad Layout for DFN 2 2 MD YW Figure 29. Product Marking MML25231HT1 RF Device Data Freescale Semiconductor, Inc. 13 PACKAGE DIMENSIONS MML25231HT1 14 RF Device Data Freescale Semiconductor, Inc. MML25231HT1 RF Device Data Freescale Semiconductor, Inc. 15 MML25231HT1 16 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3100: General Purpose Amplifier and MMIC Biasing Software .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Apr. 2016 Description Initial Release of Data Sheet MML25231HT1 RF Device Data Freescale Semiconductor, Inc. 17 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2016 Freescale Semiconductor, Inc. MML25231HT1 Document Number: MML25231HT1 Rev. 0, 4/2016 18 RF Device Data Freescale Semiconductor, Inc.