Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MML25231HT1
Rev. 0, 4/2016
Enhancement Mode pHEMT
Technology (E--pHEMT)
MML25231HT1
Low Noise Amplifier
The MML25231H is a single--stage low noise amplifier (LNA) with active
bias and high isolation for use in cellular infrastructure applications. It is
designed for a range of low noise, high linearity applications such as picocell,
femtocell, tower mounted amplifiers (TMA) and receiver front--end circuits. It
operates from a single voltage supply and is suitable for applications with
frequencies from 1000 to 4000 MHz such as CDMA, W--CDMA and LTE.
1000–4000 MHz, 15.2 dB
23 dBm, 0.36 NF
E--pHEMT LNA
Features
 Ultra Low Noise Figure: 0.39 dB @ 1900 MHz, 0.54 dB @ 2500 MHz
 High Linearity: 34.7 dBm OIP3 @ 1900 MHz, 35.2 dBm @ 2500 MHz
 Frequency: 1000–4000 MHz
 Unconditionally Stable Over Temperature
 P1dB: 22.6 dBm @ 1900 MHz, 22.5 dBm @ 2500 MHz
 Small--Signal Gain: 17.2 dB @ 1900 MHz, 15.2 dB @ 2500 MHz
 Single 5 V Supply
 Power--down Pin
 Supply Current: 60 mA (adjustable externally)
 50 Ohm Operation (some external matching required)
 Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package
Table 1. Typical Performance (1)
1750
Characteristic Symbol MHz
Table 2. Maximum Ratings
1920 2350 2600 3600
MHz MHz MHz MHz Unit
0.39
DFN 2  2
Noise Figure
NF
0.38
0.50
0.57
0.98
dB
Input Return
Loss (S11)
IRL
–12.0 –12.8 –15.1 –15.9 –10.7 dB
Output Return
Loss (S22)
ORL
–14.4 –14.4 –14.8 –15.3 –20.7 dB
Small-Signal
Gain (S21)
GP
17.8
17.2
15.6
14.8
11.7
Power Output
@ 1dB
Compression
P1dB
22.9
22.6
22.6
22.5
22.8 dBm
Third Order
Input Intercept
Point
IIP3
16.5
17.5
19.3
20.7
25.1 dBm
Third Order
Output
Intercept Point
OIP3
34.4
34.7
35.0
35.7
37.0 dBm
Rating
Symbol
Value
Unit
Supply Voltage
VDD
6
V
Supply Current
IDD
150
mA
RF Input Power
Pin
20
dBm
Storage Temperature Range
Tstg
–65 to +150
C
Junction Temperature
TJ
175
C
dB
1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit
tuned for specified frequency.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 87C, 5 Vdc, 65 mA, no RF applied
Symbol
Value (3)
Unit
RJC
134
C/W
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
 Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MML25231HT1
1
Table 4. Electrical Characteristics (VDD = 5 Vdc, 2600 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Gp
14.2
14.8
—
dB
Input Return Loss (S11)
IRL
—
–16.0
—
dB
Output Return Loss (S22)
ORL
—
–15.3
—
dB
Power Output @ 1dB Compression
P1dB
—
22.5
—
dBm
Third Order Input Intercept Point
IIP3
—
20.7
—
dBm
Reverse Isolation (S12)
Characteristic
|S12|
—
–20.9
—
dB
Noise Figure
NF
—
0.56
—
dB
Supply Current (1)
IDD
55
60
65
mA
Supply Voltage
VDD
—
5
—
V
Supply Current in Power Down Mode
IPD
—
2.8
—
mA
Logic Voltage for Power Down (2)
Input High Voltage
Input Low Voltage
VPD
1.8
0
—
—
VDD
0.4
V
Table 5. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22--A114)
1C
Machine Model (per EIA/JESD 22--A115)
A
Charge Device Model (per JESD 22--C101)
IV
Table 6. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
1
260
C
Per JESD22--A113, IPC/JEDEC J--STD--020
Table 7. Ordering Information
Device
Tape and Reel Information
MML25231HT1
Package
T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel
DFN 2  2
1. DC current measured with no RF signal applied.
2. Limits derived from device characterization.
Table 8. Functional Pin Description
Pin
Number
Pin Function
1
VBIAS
2
RFin
3
No Connection
4
No Connection
5
No Connection
6
No Connection
7
RFout/Supply Voltage
8
Power Down (Active High)
VBIAS
1
RFin
2
N.C.
3
N.C.
4
GND
8
Power Down
7
RFout/VDD
6
N.C.
5
N.C.
(Top View)
Note: Exposed backside of the package
is DC and RF ground. N.C. can be
connected to GND.
Figure 1. Pin Connections
MML25231HT1
2
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2500 MHz
VDD
R2
POWER
DOWN
C3
R1
C5
BIAS
CIRCUIT
1
RF
INPUT
C4
8
RF
OUTPUT
L3
L2
L1
2
C6
7
C2
C1
3
N.C.
N.C.
6
4
N.C.
N.C.
5
Figure 2. MML25231HT1 Test Circuit Schematic
Table 9. MML25231HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
82 pF Chip Capacitor
GRM1555C1H820JA01
Murata
C2
9 pF Chip Capacitor
GJM1555C1H9R0CB01
Murata
C3
10 pF Chip Capacitor
GJM1555C1H100JB01
Murata
C4
0.01 F Chip Capacitor
GRM155R71E103KA01
Murata
C5
1000 pF Chip Capacitor
GRM155R71H102KA01
Murata
C6
0.4 pF Chip Capacitor
04023U0R4BBW
AVX
L1
1.0 nH Chip Inductor
0402CS--1N0XJLW
Coilcraft
L2
68 nH Chip Inductor
0402HPH--68NXGL
Coilcraft
L3
40 nH Chip Inductor
0402HP--40NXGL
Coilcraft
R1
1800 , 1/4 W Chip Resistor
RK73B2ATTD182J
KOA
R2
0 , 1.5 A Chip Resistor
CR0402--J/--000GLFCT--ND
Bourns
PCB
Rogers RO4350B, 0.010, r = 3.66
M56197
MTL
MML25231HT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM APPLICATION CIRCUIT: 2500 MHz
VDD
POWER
DOWN
R2
M56197
C3
DFN 2x2--8N
Rev. 0
R1
C5
C4
L3
C2
RFIN
C6
L1
C1
L2
RFOUT
PCB actual size: 0.75  0.86.
NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply
decoupling and grounding are employed.
Figure 3. MML25231HT1 Test Circuit Component Layout
Table 9. MML25231HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
82 pF Chip Capacitor
GRM1555C1H820JA01
Murata
C2
9 pF Chip Capacitor
GJM1555C1H9R0CB01
Murata
C3
10 pF Chip Capacitor
GJM1555C1H100JB01
Murata
C4
0.01 F Chip Capacitor
GRM155R71E103KA01
Murata
C5
1000 pF Chip Capacitor
GRM155R71H102KA01
Murata
C6
0.4 pF Chip Capacitor
04023U0R4BBW
AVX
L1
1.0 nH Chip Inductor
0402CS--1N0XJLW
Coilcraft
L2
68 nH Chip Inductor
0402HPH--68NXGL
Coilcraft
L3
40 nH Chip Inductor
0402HP--40NXGL
Coilcraft
R1
1800 , 1/4 W Chip Resistor
RK73B2ATTD182J
KOA
R2
0 , 1.5 A Chip Resistor
CR0402--J/--000GLFCT--ND
Bourns
PCB
Rogers RO4350B, 0.010, r = 3.66
M56197
MTL
(Test Circuit Component Designations and Values repeated for reference.)
MML25231HT1
4
RF Device Data
Freescale Semiconductor, Inc.
–6
35
–16
–8
30
–18
–10
25
–20
85C
–12
S12 (dB)
S11 (dB)
50 OHM TYPICAL CHARACTERISTICS: 2500 MHz
–14
–16
VDD = 5 Vdc
1500
2000
2500
3000
3500
–30
0
1000
4000
1500
2000
2500
3000
3500
f, FREQUENCY (MHz)
Figure 4. S11 versus Frequency and
Temperature
Figure 5. S12 versus Frequency and
Temperature
–12
21
20
–14
4000
85C
–40C
16
15
14
85C
S22 (dB)
–16
18
17
25C
--40C
–18
25C
–20
–22
13
12
10
1000
VDD = 5 Vdc
f, FREQUENCY (MHz)
19
S21 (dB)
15
–24
22
11
25C
20
–22
5
–28
–18
–20
1000
85C
10
–26
25C
–40C
–40C
–24
VDD = 5 Vdc
1500
2000
2500
3000
3500
4000
–26
1000
VDD = 5 Vdc
1500
2000
2500
3000
3500
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 6. S21 versus Frequency and
Temperature
Figure 7. S22 versus Frequency and
Temperature
4000
MML25231HT1
RF Device Data
Freescale Semiconductor, Inc.
5
1.6
17
35
1.4
30
16
25
1.2
Gps, POWER GAIN (dB)
NF, NOISE FIGURE (dB)
50 OHM TYPICAL CHARACTERISTICS: 2500 MHz
85C
1
0.8
25C
0.6
–40C
0.2
1000
VDD = 5 Vdc
1500
2000
25C
10
2500
3000
3500
VDD = 5 Vdc, f = 2500 MHz, CW
4000
10
12
14
16
18
20
22
f, FREQUENCY (MHz)
Pout, OUTPUT POWER (dBm)
Figure 8. Noise Figure versus Frequency
and Temperature
Figure 9. Power Gain versus Output Power
and Temperature
17
1920 MHz
16
2350 MHz
15
2600 MHz
14
13
3600 MHz
12
f
(MHz)
Temperature
()
Gain
(dB)
P1dB
(dBm)
1750
25
17.86
22.9
1750
–40
18.09
23
1750
85
17.68
22.2
1920
25
17.16
22.6
1920
–40
17.37
23
1920
85
16.98
22.25
11
2350
25
15.64
22.6
10
2350
–40
15.84
22.9
2350
85
15.47
22.2
2500
25
15.13
22.5
2500
–40
15.38
22.75
2500
85
14.96
22.18
2600
25
14.89
22.45
2600
–40
15.11
22.75
2600
85
14.74
22.3
3600
25
11.83
22.8
3600
–40
12
23
3600
85
11.67
22.4
10
12
14
24
Power Gain versus Temperature
1750 MHz
18
Gps, POWER GAIN (dB)
85C
15
14
12
0
VDD = 5 Vdc, CW
19
15
20
13
5
0.4
20
–40C
16
18
20
22
Pout, OUTPUT POWER (dBm)
Figure 10. Power Gain versus Output Power
and Frequency
24
MML25231HT1
6
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS: 2500 MHz
90
35
100
35
VDD = 5 Vdc, f = 2500 MHz, CW
25
80
85C
20
75
15
25C
70
10
65
5
3600 MHz
90
25
85
20
80
15
75
2600 MHz
2350 MHz
10 1920 MHz
70
1750 MHz
5
65
60
0
60
0
10
12
14
16
18
20
22
24
10
12
14
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 11. Drain Current versus Output Power
and Temperature
Figure 12. Drain Current versus Output Power
and Frequency
35
22
–12
35
IMD3, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
IIP3, THIRD ORDER INPUT INTERCEPT POINT
(dBm)
VDD = 5 Vdc, CW
95
30
–40C
IDD, DRAIN CURRENT (mA)
IDD, DRAIN CURRENT (mA)
30
85
–40C
30
20
85C
25
18
20
16
15
25C
14
10
12
5
VDD = 5 Vdc, f = 2500 MHz, CW
0
10
6
8
10
12
14
–18
30
–24
25
–30
85C
25C
20
–36
–40C
–42
15
–48
10
–54
5
–60
VDD = 5 Vdc, f = 2500 MHz, CW
–66
0
16
18
20
22
8
6
10
Pout, OUTPUT POWER (dBm)
Figure 13. Third Order Input Intercept Point
versus Output Power and Temperature
IIP3, THIRD ORDER INPUT INTERCEPT POINT
(dBm)
12
14
16
18
20
22
Pout, OUTPUT POWER (dBm)
Figure 14. Third Order Intermodulation Distortion
versus Output Power and Temperature
30
35
VDD = 5 Vdc, CW
27
30
3600 MHz
25
24
21
20
2350 MHz
2600 MHz
15
18
15
10
1750 MHz
1920 MHz
5
12
09
6
8
10
12
14
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Figure 15. Third Order Input Intercept Point
versus Output Power and Frequency
MML25231HT1
RF Device Data
Freescale Semiconductor, Inc.
7
50 OHM TYPICAL CHARACTERISTICS: 2500 MHz
IMD3, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
–10
35
30
–20
25
–30
20
–40
15
1750 MHz
1920 MHz
–50
10
2600 MHz
2350 MHz
3600 MHz
–60
5
VDD = 5 Vdc, CW
–70
0
6
8
10
12
14
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Figure 16. Third Order Intermodulation Distortion
versus Output Power
IMD3 and IIP3 versus Temperature
f
(GHz)
Temperature
()
Pout
(dBm)
Gain
(dB)
IIP3
(dBm)
IMD3
(dBc)
1750
25
13.9
17.9
16.5
–47.0
1750
–40
14.1
18.1
16.7
–47.4
1750
85
13.7
17.7
16.0
–46.0
1920
25
14.2
17.2
17.6
–47.1
1920
–40
14.4
17.4
17.7
–47.4
1920
85
14.0
17.0
17.0
–47.9
2350
25
13.7
15.7
19.3
–48.7
2350
–40
13.9
15.9
19.6
–49.1
2350
85
13.5
15.5
19.2
–47.3
2500
25
14.2
15.2
20.0
–48.1
2500
–40
14.4
15.4
20.2
–48.5
2500
85
14.0
15.0
19.7
–47.3
2600
25
13.9
14.9
20.7
–49.5
2600
–40
14.2
15.2
20.9
–49.9
2600
85
13.8
14.8
20.4
–48.7
3600
25
13.9
11.9
25.1
–52.3
3600
–40
14.1
12.1
25.4
–52.9
3600
85
13.7
11.7
25.0
–52.0
MML25231HT1
8
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 2000 MHz
VDD
R2
POWER
DOWN
C3
R1
C5
BIAS
CIRCUIT
1
RF
INPUT
C4
8
RF
OUTPUT
L3
L2
L1
2
7
C2
C1
3
N.C.
N.C.
6
4
N.C.
N.C.
5
Figure 17. MML25231HT1 Test Circuit Schematic
Table 10. MML25231HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
82 pF Chip Capacitor
GRM1555C1H820JA01
Murata
C2
12 pF Chip Capacitor
GRM1555C1H120GA01
Murata
C3
10 pF Chip Capacitor
GJM1555C1H100JB01
Murata
C4
0.01 F Chip Capacitor
GRM155R71E103KA01
Murata
C5
1000 pF Chip Capacitor
GRM155R71H102KA01
Murata
L1
1.0 nH Chip Inductor
0402CS-1N0XJLW
Coilcraft
L2
68 nH Chip Inductor
0402HPH-68NXGL
Coilcraft
L3
40 nH Chip Inductor
0402HP-40NXGL
Coilcraft
R1
1800 , 1/4 W Chip Resistor
RK73B2ATTD182J
KOA
R2
0 , 1.5 A Chip Resistor
CR0402-J/-000GLFCT-ND
Bourns
PCB
Rogers RO4350B, 0.010, r = 3.66
M56197
MTL
MML25231HT1
RF Device Data
Freescale Semiconductor, Inc.
9
50 OHM APPLICATION CIRCUIT: 2000 MHz
VDD
POWER
DOWN
M56197
R2
C3
DFN 2x2--8N
Rev. 0
R1
C5
C4
L3
C1
L1
L2
C2
RFIN
RFOUT
PCB actual size: 0.75  0.86.
NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply
decoupling and grounding are employed.
Figure 18. MML25231HT1 Test Circuit Component Layout
Table 10. MML25231HT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
82 pF Chip Capacitor
GRM1555C1H820JA01
Murata
C2
12 pF Chip Capacitor
GRM1555C1H120GA01
Murata
C3
10 pF Chip Capacitor
GJM1555C1H100JB01
Murata
C4
0.01 F Chip Capacitor
GRM155R71E103KA01
Murata
C5
1000 pF Chip Capacitor
GRM155R71H102KA01
Murata
L1
1.0 nH Chip Inductor
0402CS-1N0XJLW
Coilcraft
L2
68 nH Chip Inductor
0402HPH-68NXGL
Coilcraft
L3
40 nH Chip Inductor
0402HP-40NXGL
Coilcraft
R1
1800 , 1/4 W Chip Resistor
RK73B2ATTD182J
KOA
R2
0 , 1.5 A Chip Resistor
CR0402-J/-000GLFCT-ND
Bourns
PCB
Rogers RO4350B, 0.010, r = 3.66
M56197
MTL
(Test Circuit Component Designations and Values repeated for reference.)
MML25231HT1
10
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS: 2000 MHz
–6
35
–16
–7
30
–18
–8
25
–20
S12 (dB)
S11 (dB)
–9
–10
–11
5
–28
VDD = 5 Vdc
1500
2000
2500
3000
3500
–30
0
1000
4000
2000
2500
3000
3500
Figure 19. S11 versus Frequency
Figure 20. S12 versus Frequency
–14
21
20
–15
19
–16
18
17
–17
16
15
14
13
4000
–18
–19
–20
12
10
1000
1500
f, FREQUENCY (MHz)
22
11
VDD = 5 Vdc
f, FREQUENCY (MHz)
S22 (dB)
S21 (dB)
–14
1000
15
–24
10
–26
–12
–13
20
–22
–21
VDD = 5 Vdc
1500
2000
2500
3000
3500
4000
–22
1000
VDD = 5 Vdc
1500
2000
2500
3000
3500
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 21. S21 versus Frequency
Figure 22. S22 versus Frequency
4000
MML25231HT1
RF Device Data
Freescale Semiconductor, Inc.
11
50 OHM TYPICAL CHARACTERISTICS: 2000 MHz
20
35
1.6
Gps, POWER GAIN (dB)
NF, NOISE FIGURE (dB)
1.4
1.2
1
0.8
0.6
1750 MHz
16
20
15
15
14
2350 MHz
3000
10
0
3500
4000
10
12
14
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Figure 23. Noise Figure versus Frequency
Figure 24. Power Gain versus Output Power
and Frequency
3600 MHz
2600 MHz
90
25
2500 MHz
85
20
80
15
75
2350 MHz
1920 MHz
1750 MHz
10
70
5
65
60
0
10
3600 MHz
f, FREQUENCY (MHz)
VDD = 5 Vdc, CW
95
30
IDD, DRAIN CURRENT (mA)
2500
IIP3, THIRD ORDER INPUT INTERCEPT POINT
(dBm)
100
35
2000
2500 MHz
2600 MHz
12
5
11
VDD = 5 Vdc
1500
1920 MHz
13
10
0.4
0.2
1000
VDD = 5 Vdc, CW
19
30
18
25
17
12
14
16
18
20
22
24
28
35
26
30
24
25
22
3600 MHz
2500 MHz
20
20
18
15
16
2600 MHz
2350 MHz
1750 MHz
14
10
12
5
10
1920 MHz
VDD = 5 Vdc, CW
08
6
8
10
12
14
16
18
20
22
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 25. Drain Current versus Output Power
and Frequency
Figure 26. Third Order Input Intercept Point
versus Output Power and Frequency
24
IMD3, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
–10
35
VDD = 5 Vdc, CW
30
–20
25
–30
20
–40
15
2350 MHz
1750 MHz
1920 MHz
–50
10
2600 MHz
–60
5
0
–70
2500 MHz
3600 MHz
6
8
10
12
14
16
18
20
22
24
Pout, OUTPUT POWER (dBm)
Figure 27. Third Order Intermodulation
Distortion versus Output Power and Frequency
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Freescale Semiconductor, Inc.
2.00
0.80
0.30
0.50
1.6  0.8 solder pad with
thermal via structure. All
dimensions in mm.
1.20
0.60
2.40
Figure 28. PCB Pad Layout for DFN 2  2
MD
YW
Figure 29. Product Marking
MML25231HT1
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Freescale Semiconductor, Inc.
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PACKAGE DIMENSIONS
MML25231HT1
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MML25231HT1
RF Device Data
Freescale Semiconductor, Inc.
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MML25231HT1
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PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3100: General Purpose Amplifier and MMIC Biasing
Software
 .s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Apr. 2016
Description
 Initial Release of Data Sheet
MML25231HT1
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Freescale Semiconductor, Inc.
17
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E 2016 Freescale Semiconductor, Inc.
MML25231HT1
Document Number: MML25231HT1
Rev. 0, 4/2016
18
RF Device Data
Freescale Semiconductor, Inc.