AN11595 BGU8M1UK LTE LNA evaluation board Rev. 2 — 22 February 2015 Application note Document information Info Content Keywords BGU8M1UK, LTE, LNA Abstract This document explains the BGU8M1UK LTE LNA evaluation board Ordering info Board-number: OM7898 12NC: 9340 691 58598 Contact information For more information, please visit: http://www.nxp.com AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB Revision history Rev Date Description 2 1 Performance BGU8M1UK for mid + high band added First publication 20150222 20141106 Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 2 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 1. Introduction NXP Semiconductors’ BGU8M1UK LTE LNA Evaluation Board is designed to evaluate the performance of the LTE LNA using: NXP Semiconductors’ BGU8M1UK LTE Low Noise Amplifier A matching inductor A decoupling capacitor NXP Semiconductors’ BGU8M1UK is a low-noise amplifier for LTE receiver applications in a extremely small wafer level chip scale package (WLCSP) 0.65 x 0.44 x 0.2 mm; 6 solder bumps; 0.22 mm bump pitch. The BGU8M1UK features gain of 16 dB and a noise figure of 0.8 dB at a current consumption of 4.3 mA. Its superior linearity performance removes interference and noise from co-habitation cellular transmitters, while retaining sensitivity. The LNA and components occupy a total area of approximately 4 mm2. In this document, the application diagram, board layout, bill of materials, and typical results are given, as well as some explanations on LTE related performance parameters like input third-order intercept point IIP3, gain compression and noise. Fig 1. AN11595 Application note BGU8x1UK LTE LNA evaluation board (used for BGU8L1UK, BGU8M1UK and BGU8H1UK) All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 3 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 2. General description Modern cellular phones have multiple radio systems, so problems like co-habitation are quite common. Since the LTE diversity antenna needs to be placed far from the main antenna to ensure the efficiency of the channel, a low noise amplifier close to the antenna is used to compensate the track-losses (and SAW-filter losses when applicable) on the printed circuit board. A LTE receiver implemented in a mobile phone requires a low current consumption and low Noise Figure. All the different transmit signals that are active in smart phones and tablets can cause problems like inter-modulation and compression. Therefore also a high linearity is required. 3. BGU8M1UK LTE LNA evaluation board The BGU8M1UK LNA evaluation board simplifies the RF evaluation of the BGU8M1UK LTE LNA applied in a LTE front-end, often used in mobile cell phones. The evaluation board enables testing of the device RF performance and requires no additional support circuitry. The board is fully assembled with the BGU8L1UK including the input series inductor (L1) and DC blocking capacitor (C2) as well as a decoupling capacitor (C1) for the supply voltage. The board is supplied with two SMA connectors for input and output connection to RF test equipment. The BGU8M1UKcan operate from a 1.5 V to 3.1 V single supply and consumes typical 4.3 mA. 3.1 Application Circuit The circuit diagram of the evaluation board is shown in Fig 2. With jumper JU1 the enable input can be connected to Vcc. Fig 2. AN11595 Application note Circuit diagram of the BGU8x1UK LNA evaluation board (used for BGU8L1UK, BGU8M1UK and BGU8H1UK) All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 4 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 3.2 PCB Layout Fig 3. Printed-Circuit Board layout of the BGU8x1UK LNA evaluation board (used for BGU8L1UK, BGU8M1UK and BGU8H1UK) A good PCB layout is an essential part of an RF circuit design. The LNA evaluation board of the BGU8M1UK can serve as a guideline for laying out a board using the BGU8M1UK. Use controlled impedance lines for all high frequency inputs and outputs. Bypass Vcc with decoupling capacitors, preferably located as close as possible to the device. An option can be to skip the input series capacitor (C2) when a SAW filter is used in front of AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 5 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB the LNA, since most of the SAW filters will block the DC-current. For long bias lines it may be necessary to add decoupling capacitors along the line further away from the device. Proper grounding of the GND pins is also essential for good RF performance. Either connect the GND pins directly to the ground plane or through vias, or do both, which is recommended. The material that has been used for the evaluation board is FR4 using the stack shown in Fig 4. 20um Cu 0.2mm FR4 critical 20um Cu 0.8mm FR4 only for mechanical rigidity of PCB 20um Cu (1) Material supplier is ISOLA DURAVER; εr = 4.6-4.9: T Fig 4. AN11595 Application note Stack of the PCB material All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 6 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 4. Bill of materials Table 1. BOM of the BGU8M1UK LTE LNA evaluation board Designator Description Footprint Value Supplier Name/type E BGU8M1UK 0.65 x 0.44 x 0.2mm3, NXP Comment WLCSP 0.22mm pitch PCB 20 x 35mm BGU8M1UK LTE LNA EV Kit C1 Capacitor 0402 1uF Murata GRM1555 Decoupling C2 Capacitor 0402 1nF Murata GRM1555 DC block L1 Inductor 0402 4.7nH Murata LQW15 Input matching X1, X2 SMA RD connector - - Johnson, End launch SMA RF input/ RF output X3 DC header - - Molex, PCB header, Right Angle, 1 row, 3 way 90121-0763 Bias connector X4 JUMPER - - Molex, PCB header, Vertical, 1 row, 3 way 90120-0763 Connect Ven to Vcc or separate Ven voltage 142-0701-841 Stage JU1 JUMPER 4.1 BGU8M1UK NXP Semiconductors’ BGU8M1UK LTE low noise amplifier is designed for the LTE frequency band. The integrated biasing circuit is temperature stabilized, which keeps the current constant over temperature. It also enables the superior linearity performance of the BGU8M1UK. The BGU8M1UK is also equipped with an enable function that allows it to be controlled via a logic signal. In disabled mode it consumes less than1 μA. The output of the BGU8M1UK is internally matched between 1805 MHz and 2200 MHz, whereas only one series inductor at the input is needed to achieve the best RF performance. The output is AC coupled via an integrated capacitor. It requires only three external components to build a LTE LNA having the following advantages: Low noise System optimized gain High linearity under jamming 0.65 x 0.44 x 0.2, 0.22mm pitch: WLCSP Low current consumption Short power settling time 4.2 Series inductor The evaluation board is supplied with Murata LQW15 series inductor of 4.7 nH. This is a wire wound type of inductor with high quality factor (Q) and low series resistance (Rs). This type of inductor is recommended in order to achieve the best noise performance. AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 7 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB High Q inductors from other suppliers can be used. If it is decided to use other low cost inductors with lower Q and higher Rs the noise performance will degrade. AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 8 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 5. Required Equipment In order to measure the evaluation board the following is necessary: DC Power Supply op to 30 mA at 1.5 V to 3.1 V Two RF signal generators capable of generating RF signals at the LTE operating frequency of 1805 MHz to 2200 MHz. An RF spectrum analyzer that covers at least the operating frequency of 1805 MHz to 2200 MHz as well as a few of the harmonics. Up to 6 GHz should be sufficient. Amp meter to measure the supply current (optional) A network analyzer for measuring gain, return loss and reverse isolation Noise figure analyzer and noise source (can also be done with a RF spectrum analyzer) Directional coupler Proper RF cables 6. Connections and setup The BGU8M1UK LTE LNA evaluation board is fully assembled and tested (see Fig 5). Please follow the steps below for a step-by-step guide to operate the LNA evaluation board and testing the device functions. 1. Connect the DC power supply to the Vcc and GND terminals. Set the power supply to the desired supply voltage, between 1.5 V and 3.1 V, but never exceed 3.1 V as it might damage the BGU8M1UK. 2. Jumper JU1 is connected between the Vcc terminal of the evaluation board and the Ven pin of the BGU8M1UK. 3. Connect the RF signal generator and the spectrum analyzer to the RF input and the RF output of the evaluation board, respectively. Do not turn on the RF output of the signal generator yet, set it to approximately -40 dBm output power at center frequency of the wanted LTE-ban and\ set the spectrum analyzer at the same center frequency and a reference level of 0 dBm. 4. Turn on the DC power supply and it should read approximately 4..5 mA. 5. Enable the RF output of the generator: The spectrum analyzer displays a tone around –24 dBm. 6. Instead of using a signal generator and spectrum analyzer one can also use a network analyzer in order to measure gain as well as in- and output return loss, P1dB and IP3 (see Fig 6). 7. For noise figure evaluation, either a noise figure analyzer or a spectrum analyzer with noise option can be used. The use of a 5 dB noise source, like the Agilent 364B is recommended. When measuring the noise figure of the evaluation board, any kind of adaptors, cables etc between the noise source and the evaluation board should be minimized, since this affects the noise figure (see Fig 7). AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 9 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB AN11595 Application note Fig 5. Evaluation board including its connections Fig 6. 2-Tone Setup for 50Ω LNA board tests (S-Parameters, P1dB and 2-Tone-tests) All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 10 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB Fig 7. Setup diagram for 50Ω LNA-board NF-Measurements. AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 11 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 7. Evaluation Board Tests 7.1 S-Parameters The measured S-Parameters and stability factor K are given in the figures below. For the measurements, a BGU8M1UK-LNA EVB is used ((see Fig 5). Measurements have been carried out using the setup shown in Fig 6. S21 (dB) S11 & S22 20 0 10 -5 -10 -10 -20 S21 (dB) Spar [dB] S21 [dB] 0 -15 S11 S22 -20 -30 -25 -40 -50 0.0E+00 2.0E+09 4.0E+09 6.0E+09 Freq [Hz] 8.0E+09 -30 0.0E+00 1.0E+10 5.0E+09 Freq [Hz] K-factor S12(dB) 0 10000 -10 1000 100 -30 -40 S12(dB) K-factor S12 [dB] -20 10 K 1 -50 0.1 -60 -70 0.0E+00 Fig 8. 1.0E+10 2.0E+09 4.0E+09 6.0E+09 Freq [Hz] 8.0E+09 1.0E+10 0.01 0.0E+00 2.0E+09 4.0E+09 6.0E+09 Freq [Hz] 8.0E+09 1.0E+10 BGU8M1UK S-Parameters (typical values). Vcc=2.8V, Pin=-45dBm. AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 12 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB S21 (dB) S11 & S22 19 0 -5 18 -10 Spar [dB] S21 [dB] 17 16 15 -15 -20 -25 -30 14 -35 13 1.7E+09 1.9E+09 2.1E+09 -40 1.7E+09 2.3E+09 1.9E+09 -17 1.8 -19 1.6 -21 1.4 -23 1.2 K-factor S12 [dB] 2 -25 -27 0.6 -31 0.4 -33 0.2 2.1E+09 2.3E+09 0 1.7E+09 1.9E+09 2.3E+09 Freq [Hz] Freq [Hz] Fig 9. 2.1E+09 1 0.8 -29 1.9E+09 2.3E+09 K-factor S12(dB) -15 -35 1.7E+09 2.1E+09 Freq [Hz] Freq [Hz] BGU8M1UK S-Parameters (typical values). Vcc=2.8V, Pin=-45dBm (freq. range zoomed in). AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 13 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 7.2 S-Parameters and NF performance in the min-high band The BGU8M1UK can also be used for the LTE mid-high band (between 1.8 and 2.7GHz) with some reduced gain performance beyond 2.2GHz (compared with the BGU8H1UK, which is especially designed for the high band). The input inductor L1 (see Fig 2) is not modified. The measured S-Parameters and NF-performance are given in the figures below. Fig 10. BGU8M1UK S-Parameters for the mid-high band between 1.8GHz and 2.7GHz (typical values). Vcc=2.8V, Pin=-45dBm. Fig 11. BGU8M1UK NF results for the min-high band between 1.8GHz and 2.7GHz (typical values). Vcc=2.8V. AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 14 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 7.3 1dB gain compression Strong in-band cell phone TX jammers can cause linearity problems and result in thirdorder intermodulation products in the LTE frequency band. In this chapter the effects of these strong signals is shown. For the measurements, a BGU8M1UK-LNA EVB is used ((see Fig 5). Measurements have been carried out using the setup shown in Fig 6 The gain as function of input power of the DUT was measured between port RFin and RFout of the EVB at the LTE center frequencies. The figures below show the gain compression curves at LNA-board. BGU8M1UK, 65638#1 BGU8M1UK, 65638#1 P1dB, f=1960MHz 18 18 16 16 14 14 12 12 10 Vcc=1.8V 8 Vcc=2.8V Gain [dB] Gain [dB] P1dB, f=1842.5MHz 10 Vcc=1.8V 8 Vcc=2.8V Vcc=1.5V Vcc=1.5V 6 Vcc=3.1V 6 4 4 2 2 0 Vcc=3.1V 0 -30 -25 -20 -15 -10 -5 0 -30 -25 Pin [dBm] Application note -15 -10 -5 0 Pin [dBm] Fig 12. Gain versus inp. power, f=1842.5MHz (band 3) AN11595 -20 Fig 13. Gain versus input power, f=1960MHz (band 2) All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 15 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB BGU8M1UK, 65638#1 P1dB, f=2140MHz 18 16 14 Gain [dB] 12 10 Vcc=1.8V 8 Vcc=2.8V Vcc=1.5V 6 Vcc=3.1V 4 2 0 -30 -25 -20 -15 -10 -5 0 Pin [dBm] Fig 14. Gain versus input power, f=2140MHz (band 1) AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 16 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 7.1 1dB gain compression in the mid-high band The BGU8M1UK can also be used for the LTE mid-high band (between 1.8 and 2.7GHz) with some reduced gain performance beyond 2.2GHz (compared with the BGU8H1UK, which is especially designed for the high band). The input inductor L1 (see Fig 2) is not modified. The measured Gain and Pout-curves are given in the figures below. Fig 15. Gain and Pout versus inp. power, Vcc=2.8V, f=1843MHz (band 3) AN11595 Application note Fig 16. Gain and Pout versus input power, Vcc=2.8V, f=1960MHz (band 2) All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 17 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB Fig 17. Gain and Pout versus inp. power, Vcc=2.8V, f=2140MHz Fig 18. Gain and Pout versus input power, Vcc=2.8V, f=2350MHz Fig 19. Gain and Pout versus inp. power, Vcc=2.8V, f=2655MHz AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 18 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 7.2 2-Tone Test, IP3 The figures below show the spectra of the DUT caused by a 2-Tone input signal around the centre of the LTE-bands. For the measurements, a BGU8M1UK-LNA EVB is used ((see Fig 5). Measurements have been carried out using the setup shown in Fig 6. BGU8M1UK_65568#1 BGU8M1UK_65568#1 2-Tone Test, band 2 0 0 -10 -10 -20 -20 -30 -30 -40 -40 -50 Vcc=1.8V Vcc=2.8V -60 Pout [dBm] Pout [dBm] 2-Tone Test, band 3 -50 -70 -70 -80 -80 -90 -90 -100 1.83E+09 1.84E+09 1.85E+09 1.86E+09 -100 1.95E+09 1.87E+09 Vcc=1.8V Vcc=2.8V -60 1.96E+09 Freq [Hz] 1.97E+09 1.98E+09 1.99E+09 Freq [Hz] Fig 20. 2-Tone output spectrum, Pin=-15dBm, band 3 Fig 21. 2-Tone output spectrum, Pin=-15dBm, band 2 BGU8M1UK_65568#1 2-Tone Test, band 1 0 -10 -20 -30 Pout [dBm] -40 -50 Vcc=1.8V Vcc=2.8V -60 -70 -80 -90 -100 2.13E+09 2.14E+09 2.15E+09 2.16E+09 2.17E+09 Freq [Hz] Fig 22. 2-Tone output spectrum, Pin=-15dBm, band 1 AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 19 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 7.3 Enable Timing Test The following diagram shows the setup to test LNA Turn ON and Turn OFF time. Set the waveform generator to square mode and the output amplitude at 3Vrms with high output impedance. The waveform generator has adequate output current to drive the LNA therefore no extra DC power supply is required which simplifies the test setup. Set the RF signal generator output level to -20dBm between 1805 MHz and 2200 MHz and increase its level until the output DC on the oscilloscope is at 5mV on 1mV/division, the signal generator RF output level is approximately -3dBm. It is very important to keep the cables as short as possible at input and output of the LNA so the propagation delay difference on cables between the two channels is minimized. It is also critical to set the oscilloscope input impedance to 50ohm on channel 2 so the diode detector can discharge quickly to avoid a false result on the Turn OFF time testing. Fig 23. Setup Enable Timing Test The series capacitor will influence the Ton/Toff switching time. When the default value C2=1nF is used, Ton will approximately be 9us. By reducing C2 to 100pF, Ton is reduced to approximately 4µs (see Fig 24 and Fig 25). AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 20 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB Fig 24. Results Enable Timing Test. Series capacitor C2=1nF. Ton~9µs (left) and Toff~200ns (right). Fig 25. Results Enable Timing Test. Series capacitor C2=100pF. Ton~4µs (left). AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 21 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 8. Typical LNA evaluation board results Table 2. Typical results measured on the evaluation Board. Typical LNA evaluation board results Temp = 25 °C Parameter Supply Voltage Supply Current Noise Figure Power Gain Input Return Loss Output Return Loss Reverse Isolation Input 1dB Gain Compression Output 1dB Gain Compression Input third order intercept point Output third order intercept point Power settling time Freq. [MHz] 1840 1960 2140 1840 1960 2140 1840 1960 2140 1840 1960 2140 1840 1960 2140 1840 1960 2140 1840 1960 2140 1840 1960 2140 1840 1960 2140 Symbol Vcc Icc NF Gp RLin RLout ISOrev Pi1dB Po1dB IIP3 OIP3 Ton Toff Unit 1.5 3.9 0.80 0.80 0.90 16.0 15.5 15.0 8.5 9.5 10.5 15.0 15.0 11.0 25 25 25 -12.0 -12.0 -11.0 3.0 2.5 3.0 -5.0 -5.0 -4.0 11.0 10.5 11.0 4 1 1.8 4.0 0.80 0.80 0.90 16.0 15.5 15.0 8.5 10.0 11.5 15.0 15.0 11.0 25 25 25 -8.0 -8.0 -7.0 7.0 6.5 7.0 -1.0 0.0 0.0 15.0 15.5 15.0 4 1 2.8 4.3 0.80 0.80 0.90 16.0 16.0 15.5 9.5 11.0 13.0 15.0 15.0 11.0 25 25 25 -4.0 -4.0 -3.0 11.0 11.0 11.5 1.0 2.0 3.0 17.0 18.0 18.5 4 1 3.1 4.4 0.80 0.80 0.90 16.5 16.0 15.5 9.5 11.0 13.0 15.0 15.0 11.0 25 25 25 -3.0 -3.0 -2.0 12.5 12.0 12.5 2.0 2.0 3.0 18.5 18.0 18.5 4 1 V mA dB Notes [1] dB dB dB dB dBm dBm dBm [2] dBm [2] µs µs [1] Including PCB losses [2] f = f_center_band; Delta_f=1MHz Pin_f1 = Pin_f2 = -15 dBm AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 22 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 9. Legal information 9.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 9.2 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. AN11595 Application note Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of noninfringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer. In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages. Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose. 9.3 Trademarks Notice: All referenced brands, product names, service names and trademarks are property of their respective owners. All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 23 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 10. List of figures Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6. Fig 7. Fig 8. Fig 9. Fig 10. Fig 11. Fig 12. Fig 13. Fig 14. Fig 15. Fig 16. Fig 17. Fig 18. Fig 19. Fig 20. Fig 21. Fig 22. Fig 23. BGU8x1UK LTE LNA evaluation board (used for BGU8L1UK, BGU8M1UK and BGU8H1UK) ..... 3 Circuit diagram of the BGU8x1UK LNA evaluation board (used for BGU8L1UK, BGU8M1UK and BGU8H1UK) .......................... 4 Printed-Circuit Board layout of the BGU8x1UK LNA evaluation board (used for BGU8L1UK, BGU8M1UK and BGU8H1UK) .......................... 5 Stack of the PCB material ................................. 6 Evaluation board including its connections ..... 10 2-Tone Setup for 50Ω LNA board tests (SParameters, P1dB and 2-Tone-tests) ............. 10 Setup diagram for 50Ω LNA-board NFMeasurements. ............................................... 11 BGU8M1UK S-Parameters (typical values). Vcc=2.8V, Pin=-45dBm. .................................. 12 BGU8M1UK S-Parameters (typical values). Vcc=2.8V, Pin=-45dBm (freq. range zoomed in). ........................................................................ 13 BGU8M1UK S-Parameters for the mid-high band between 1.8GHz and 2.7GHz (typical values). Vcc=2.8V, Pin=-45dBm. .................... 14 BGU8M1UK NF results for the min-high band between 1.8GHz and 2.7GHz (typical values). Vcc=2.8V. ....................................................... 14 Gain versus inp. power, f=1842.5MHz (band 3) ........................................................................ 15 Gain versus input power, f=1960MHz (band 2) ........................................................................ 15 Gain versus input power, f=2140MHz (band 1) ........................................................................ 16 Gain and Pout versus inp. power, Vcc=2.8V, f=1843MHz (band 3) ....................................... 17 Gain and Pout versus input power, Vcc=2.8V, f=1960MHz (band 2) ....................................... 17 Gain and Pout versus inp. power, Vcc=2.8V, f=2140MHz ..................................................... 18 Gain and Pout versus input power, Vcc=2.8V, f=2350MHz ..................................................... 18 Gain and Pout versus inp. power, Vcc=2.8V, f=2655MHz ..................................................... 18 2-Tone output spectrum, Pin=-15dBm, band 319 2-Tone output spectrum, Pin=-15dBm, band 219 2-Tone output spectrum, Pin=-15dBm, band 119 Setup Enable Timing Test ............................... 20 AN11595 Application note Fig 24. Fig 25. Results Enable Timing Test. Series capacitor C2=1nF. Ton~9µs (left) and Toff~200ns (right). ........................................................................21 Results Enable Timing Test. Series capacitor C2=100pF. Ton~4µs (left). ..............................21 All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 24 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 11. List of tables Table 1. Table 2. BOM of the BGU8M1UK LTE LNA evaluation board ................................................................. 7 Typical results measured on the evaluation Board. ............................................................. 22 AN11595 Application note All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 February 2015 © NXP B.V. 2015. All rights reserved. 25 of 26 AN11595 NXP Semiconductors BGU8M1UK LTE LNA EVB 12. Contents 1. 2. 3. 3.1 3.2 4. 4.1 4.2 5. 6. 7. 7.1 7.2 7.3 7.1 7.2 7.3 8. 9. 9.1 9.2 9.3 10. 11. 12. Introduction ......................................................... 3 General description............................................. 4 BGU8M1UK LTE LNA evaluation board ............ 4 Application Circuit .............................................. 4 PCB Layout ........................................................ 5 Bill of materials.................................................... 7 BGU8M1UK ....................................................... 7 Series inductor ................................................... 7 Required Equipment ........................................... 9 Connections and setup ....................................... 9 Evaluation Board Tests .................................... 12 S-Parameters ................................................... 12 S-Parameters and NF performance in the minhigh band ......................................................... 14 1dB gain compression ...................................... 15 1dB gain compression in the mid-high band .... 17 2-Tone Test, IP3 .............................................. 19 Enable Timing Test .......................................... 20 Typical LNA evaluation board results ............. 22 Legal information .............................................. 23 Definitions ........................................................ 23 Disclaimers....................................................... 23 Trademarks ...................................................... 23 List of figures..................................................... 24 List of tables ...................................................... 25 Contents ............................................................. 26 Please be aware that important notices concerning this document and the product(s) described herein, have been included in the section 'Legal information'. © NXP B.V. 2015. All rights reserved. For more information, visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 February 2015 Document identifier: AN11595