REVISIONS LTR DESCRIPTION A B C DATE (YR-MO-DA) Add appendix A for die devices 03, 04, 05. - tmh Add case outline 8. Update boileplate. - phn Add footnote in 1.2.2. Add RHA features in 1.6 and RHA requirements throughout- phn Correct dimensions for case outline Y. Update boilerplate in according with MIL-PRF-38535 requirement. phn Correct supply voltage range from -0.5 V to 7.0 V in 1.3. - phn D E APPROVED 00-07-03 02-02-12 03-10-27 Monica L. Poelking Thomas M. Hess Thomas M. Hess 07-03-06 Thomas M. Hess 08-03-17 Thomas M. Hess REV D D D D D D D D D D D D D D D D D D SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 REV D D D D D D D D D D D D D D D D D D D D SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS REV E C E D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http://www.dscc.dla.mil Thomas M. Hess STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thomas M. Hess APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 00-04-04 REVISION LEVEL E MICROCIRCUIT, DIGITAL, CMOS, MG2RTP, GATE ARRAY, MONOLITHIC SILICON SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 1 OF 5962-00B03 52 5962-E300-08 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - Federal stock class designator \ RHA designator (see 1.2.1) 00B03 01 Q X C Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 01 02 03 04 05 MG2RTPL_M01 MG2RTPL_MB02 MG2044P MG2142P MG2270P Circuit function 202 gates available 1/ 2,799 gates available 1/ 44,000 gates available 142,000 gates available 270,000 gates available 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class M Q or V Device requirements documentation Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Certification and qualification to MIL-PRF-38535 _______ 1/ This device is no longer available. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL C SHEET 2 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter X Y Z U T M N 4 5 6 7 8 Descriptive designator See Figure 1 See Figure 1 See Figure 1 See Figure 1 See Figure 1 See Figure 1 See Figure 1 See Figure 1 See Figure 1 See Figure 1 See Figure 1 See Figure 1 Terminals Package style 40 84 68 80 84 100 132 160 196 256 352 44 Ceramic dip side braze Flatpack unformed leads Flatpack unformed leads Flatpack gull wing leads Flatpack unformed leads Flatpack gull wing leads 2/ Flatpack gull wing leads Flatpack gull wing leads Flatpack gull wing leads 2/ Flatpack unformed leads Quad flatpack with non-conductive tie bar Quad chip carrier with J lead 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings 3/ 4/ Supply voltage range (VDD) ............................................................ Input voltage range (VIN) ................................................................ Input current (IIN) Signal pin .................................................................................. Power pin .................................................................................. Output short circuit current 6/ VOUT = VDD ................................................................................ VOUT = VSS ................................................................................. Lead temperature (soldering, 10 sec) ............................................ Storage temperature ...................................................................... Maximum junction temperature (TJ) .............................................. -0.5 V to 7.0 V -0.5 V to VDD + 0.5 V 5/ -10 mA to 10 mA -50 mA to 50 mA 48 mA -36 mA 300°C 7/ -65°C to 150°C 175°C 1.4 Recommended operating conditions. Supply voltage range...................................................................... 2.7 V to 5.5 V 8/ Ambient operating temperature (TA) .............................................. -55°C to 125°C 1.5 Digital logic testing for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012)............................ As specified in the AID 1.6 Radiation features. Maximum total dose available (dose rate = 0.1 rad(Si)/s) ............. 100 Krads 9/ _____ 2/ 3/ 4/ 5/ 6/ 7/ 8/ 9/ The quad leaded chip carrier drawings in this figure show a "gullwing" lead configuration. An optional lead configuration can be specified for unformed (straight) leads in the Altered Item Drawing. The leads for this optional package style shall be protected from mechanical distortion and damage such that dimensions pertaining to relative lead/body "true position" and lead "coplanarity" are always maintained until the next higher level package attachment process is complete. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. All voltages referenced to Ground unless otherwise specified. VDD + 0.5 V shall not exceed 7.0 V. The maximum output current of any single output in short condition for a maximum duration of 1 second. Duration 10 s max at a distance not less than 1.6 mm. This gate array device is capable of being configured with VDD = 3.0 V ±10% or VDD = 5.0 V ±10%. Unless otherwise specified in the AID. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL E SHEET 3 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.3 AID requirements. All AIDs written against this SMD shall be sent to DSCC-VA. The following items shall be provided to the device manufacturer by the customer as part of an AID. 3.3.1 Terminal connections and pin assignments. 3.3.2 Package type (see 1.2.4). 3.3.3 Functional block diagram (or equivalent VHDL behavioral description). 3.3.4 Functional description terms and symbols. 3.3.5 Logic diagram (or equivalent structural VHDL description or mutually agreed to net list). 3.3.6 Pin function description. 3.3.7 Design tape # or Design document name (i.e., net list). 3.3.8 Design functional tape # or name. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 4 3.3.9 Test functional tape # or name. 3.3.10 Timing diagram(s). 3.3.11 Fault coverage measurement of manufacturing logic tests. 3.3.12 Burn-in circuit. 3.3.13 Radiation exposure circuit. 3.3.14 ESD class and voltage. 3.3.15 Device electrical performance characteristics (additions to Table I). Device electrical performance characteristics shall include dc parametric, functional, ac parameters and any other data which would be considered required by a design engineer. All electrical performance characteristics apply over the full recommended ambient operating temperature range and specified test load conditions. 3.3.16 Maximum power dissipation. Maximum power dissipation shall be in accordance with the application specific design. 3.3.17 RHA post-irradiated electrical. For RHA devices supplied to this drawing, the RHA post irradiated electrical shall be specified in the AID. 3.4 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.5 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.6 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. The AID number shall be added to the marking by the manufacturer. 3.6.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. 3.7 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.8 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.9 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.10 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.11 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 123 (see MIL-PRF-38535, appendix A). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 5 TABLE I. Electrical performance characteristics. Conditions -55°C ≤ TC ≤ +125°C Group A subgroups Device type Min Max IOH = -300 μA 1, 2, 3 All - 1.2 -0.2 V IIL VIN = GND, VDD = 5.5 V 1, 2, 3 All -5 - μA IILPU VIN = GND, VDD = 5.5V 1, 2, 3 All - 100 - μA ILLPD VIN = GND, VDD = 5.5 V 1, 2, 3 All -5 - μA IIH VIN = VDD = 5.5 V 1, 2, 3 All - 5 μA IIHPU VIN = VDD = 5.5 V 1, 2, 3 All - 5 μA IIHPD VIN = VDD = 5.5 V 1, 2, 3 All - 300 μA IOZL Outputs disabled, VOUT = GND 1, 2, 3 All -5 - μA Output leakage high current Pulldown output 2/ IOZHPD Outputs disabled, VOUT = VDD 1, 2, 3 All - 300 μA Output leakage low current IOZLPU Outputs disabled, VOUT = GND 1, 2, 3 All - 100 - μA Outputs disabled, VOUT = VDD 1, 2, 3 All - 5 μA Functional verification 1, 2, 3 All - 0.8 V 1, 2, 3 All - 0.4 V Test Input clamp voltage to GND 1/ Low level input current 2/ Low level input current, Symbol VIC 4.5 V ≤ VDD ≤ 5.5 V unless otherwise specified Limits Unit Pull-up 2/ Low level input current, Pull-down 2/ High level input current 2/ High level input current, Pull-up 2/ High level input current, Pull-down 2/ Output leakage low current 2/ Pull-up output 2/ Output leakage high current 2/ Low Level Input Voltage 1/ IOZH VIL Low level output voltage BOUT12 2/ VOL1 VDD = 5.5 V, IOL = +12 mA Low level output voltage BOUT6 2/ VOL2 VDD = 5.5 V, IOL = +6 mA 1, 2, 3 All - 0.4 V Low level output Voltage BOUT3 2/ VOL3 VDD = 5.5 V, IOL = +3 mA 1, 2, 3 All - 0.4 V High Level Output Voltage BOUT12 2/ VOH1 VDD = 4.5 V, IOH = -12 mA 1, 2, 3 All 3.9 - V High level output voltage BOUT6 2/ VOH2 VDD = 4.5 V, IOH = -6 mA 1, 2, 3 All 3.9 - V High level output voltage BOUT3 2/ VOH1 VDD = 4.5 V, IOH = -3 mA 1, 2, 3 All 3.9 - V 1, 2, 3 All 2.2 - V High level input voltage 1/ VIH Functional verification Input capacitance 3/ CI VDD = 0 V 4 All 15 pF Output capacitance 3/ CIO VDD = 0 V 4 All 15 pF See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 6 TABLE I. Electrical performance characteristics. – Continued. Conditions -55°C ≤ TC ≤ +125°C Group A subgroups Device type Min Max IOH = -300 μA 1, 2, 3 All 1.2 -0.2 V IIL VIN = GND, VDD = 3.6 V 1, 2, 3 All -1 - μA IILPU VIN = GND, VDD = 3.6V 1, 2, 3 All - 50 - μA ILLPD VIN = GND, VDD = 3.6 V 1, 2, 3 All -1 - μA IIH VIN = VDD = 3.6 V 1, 2, 3 All - 1 μA IIHPU VIN = VDD = 3.6 V 1, 2, 3 All 1 μA IIHPD VIN = VDD = 3.6 V 1, 2, 3 All - 140 μA IOZL Outputs disabled, VOUT = GND 1, 2, 3 All -1 - μA Output leakage high current Pulldown output 2/ IOZHPD Outputs disabled, VOUT = VDD 1, 2, 3 All - 140 μA Output leakage low current Pull-up output 2/ IOZLPU Outputs disabled, VOUT = GND 1, 2, 3 All - 50 - μA Output leakage high current 2/ IOZH Outputs disabled, VOUT = VDD 1, 2, 3 All - 1 μA Low level input voltage LVTTL input 1/ VIL Functional verification 1, 2, 3 All - 0.8 V VDD = 3.6 V 1, 2, 3 All - 0.4 V Test Input clamp voltage to GND 1/ Low level input current 2/ Low level input current, Symbol VIC 2.7 V ≤ VDD ≤ 3.6 V unless otherwise specified Limits Unit Pull-up 2/ Low level input current, Pull-down 2/ High level input current 2/ High level input current, Pull-up 2/ High level input current, Pull-down 2/ Output leakage low current 2/ Low level output voltage BOUT12 2/ VOL1 Low level output voltage BOUT6 2/ VOL2 VDD = 3.6 V, IOL = +3 mA 1, 2, 3 All - 0.4 V Low level output voltage BOUT3 2/ VOL3 VDD = 3.6 V, IOL = +1.5 mA 1, 2, 3 All - 0.4 V High level output voltage BOUT12 2/ VOH1 VDD = 2.7 V, IOH = -4 mA 1, 2, 3 All 0.7VDD - V High level output voltage BOUT6 3/ VOH2 VDD = 2.7 V, IOH = -2 mA 1, 2, 3 All 0.7VDD - V High level output voltage BOUT3 3/ VOH3 VDD = 2.7 V, IOH = -1 mA 1, 2, 3 All 0.7VDD - V VIH Functional verification 1, 2, 3 All 2.0 - V Input capacitance 3/ CI VDD = 0 V 4 All 15 pF Output capacitance 3/ CIO VDD = 0 V 4 All 15 pF High level input voltage LVTTL input 1/ IOL = +6 mA 1/ Forcing conditions of the functional test, assure that these limits are met, but they will not be individually recorded. 2/ Read & Record measurements in accordance with MIL-PRF-38535. 3/ Tested at initial design and after major process changes, otherwise guaranteed. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 7 Case X Figure 1. Case outlines STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 8 Case Y Symbol A A1 A2 C D/E Millimeter Min Max 2.05 2.89 1.82 2.67 0.36 0.22 0.31 44.16 45.86 Dimensions Inch Symbol Min Max .081 .114 D1/E1 .072 .105 e .014 f .009 .012 L 1.738 1.806 N1/N2 Millimeter Min Max 28.96 29.46 1.270 BSC 0.46 REF 7.60 8.20 21 Inch Min Max 1.140 1.160 .050 BSC .018 REF .299 .323 21 Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 9 Case Z Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 10 Case U 1/ The quad leaded chip carrier drawings in this figure show a "gullwing" lead configuration. An optional lead configuration can be specified for unformed (straight) leads in the AID. The leads for this optional package style shall be protected from mechanical distortion and damage such that dimensions pertaining to relative lead/body "true position" and lead "coplanarity" are always maintained until the next higher level package attachment process is complete. Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 11 Case T Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 12 Case M 1/ The quad leaded chip carrier drawings in this figure show a "gullwing" lead configuration. An optional lead configuration can be specified for unformed (straight) leads in the AID. The leads for this optional package style shall be protected from mechanical distortion and damage such that dimensions pertaining to relative lead/body "true position" and lead "coplanarity" are always maintained until the next higher level package attachment process is complete. Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 13 Case N 1/ The quad leaded chip carrier drawings in this figure show a "gullwing" lead configuration. An optional lead configuration can be specified for unformed (straight) leads in the AID. The leads for this optional package style shall be protected from mechanical distortion and damage such that dimensions pertaining to relative lead/body "true position" and lead "coplanarity" are always maintained until the next higher level package attachment process is complete. Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 14 Case 4 1/ The quad leaded chip carrier drawings in this figure show a "gullwing" lead configuration. An optional lead configuration can be specified for unformed (straight) leads in the AID. The leads for this optional package style shall be protected from mechanical distortion and damage such that dimensions pertaining to relative lead/body "true position" and lead "coplanarity" are always maintained until the next higher level package attachment process is complete. Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 15 Case 5 1/ The quad leaded chip carrier drawings in this figure show a "gullwing" lead configuration. An optional lead configuration can be specified for unformed (straight) leads in the AID. The leads for this optional package style shall be protected from mechanical distortion and damage such that dimensions pertaining to relative lead/body "true position" and lead "coplanarity" are always maintained until the next higher level package attachment process is complete. Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 16 Case 6 Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 17 Case 7 Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 18 Case 8 44 LEAD QUAD CHIP CARRIER WITH J LEAD MM A INCH 2.67 A1 4.95 .105 1.65 NOM b1 0.33 .195 .065 NOM 0.56 .013 .022 b2 0.55 0.88 .022 .035 c1 0.17 0.25 .007 .010 D/E 17.14 17.78 .675 .700 D1/E1 15.74 16.76 .620 .660 e 1.27 BSC .050 BSC e2 16.00 BSC .063 BSC L 0.12 ND/NE - .005 11 11 R 0.50 1.01 .020 .040 J 0.58 - .023 - Figure 1. Case outline – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 19 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition is described in the AID. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA = +125°C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MILPRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. a. Tests shall be as specified in table II herein. b. For device class Q and V, subgroups 7 and 8 tests shall be sufficient to verify the functionality of the device as described in the AID. These tests shall have been fault graded in accordance with MIL-STD-883, test method 5012 (see 1.5 herein) or as described in the manufacturers QM plan. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 20 TABLE II. Electrical test requirements. Test requirements Subgroups Subgroups (in accordance with MIL-STD-883, method 5005, table I) (in accordance with MIL-PRF-38535, table III) Interim electrical Device Device Device class M class Q class V 1, 7, 9 1, 7, 9 1, 7, 9 parameters (see 4.2) Final electrical 1, 2, 3, 7, 8, 9, 10, 11 1/ 1, 2, 3, 7, 8, 9, 10, 11 1/ 1, 2, 3, 7, 8, 9, 10, 11 2/ 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 parameters (see 4.2) Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 Group D end-point electrical 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9 parameters (see 4.4) Group E end-point electrical parameters (see 4.4) 1/ PDA applies to subgroup 1. 2/ PDA applies to subgroups 1 and 7. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition as described in the AID. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. b. TA = +125°C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MILSTD-883. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 21 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table II herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in table II herein. c. When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019 condition “B” unless otherwise specified in the AID. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. 6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone (614) 692-0547. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DSCC-VA. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 22 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 10. SCOPE 10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QML plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. 10.2 PIN. The PIN is as shown in the following example: 5962 ⏐ ⏐ ⏐ Federal stock class designator \ ⏐ ⏐ ⏐ RHA designator (see 10.2.1) 00B03 01 ⏐ ⏐ ⏐ Device type (see 10.2.2) / V ⏐ ⏐ ⏐ Device class designator (see 10.2.3) 9 ⏐ ⏐ ⏐ Die code A ⏐ ⏐ ⏐ Die Details (see 10.2.4) \/ Drawing number 10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. 10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows: Device type 03 04 05 Generic number Circuit function MG2044P MG2142P MG2270P 44,000 gates available 142,000 gates available 270,000 gates available 10.2.3 Device class designator. Device class Device requirements documentation Q or V STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 Certification and qualification to the die requirements of MIL-PRF-38535 SIZE 5962-00B03 A REVISION LEVEL D SHEET 23 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 10.2.4.2. Die bonding pad locations and electrical functions. Die type 03 04 05 10.2.4.3. Interface materials. Die type 03 04 05 Figure number A-1 A-2 A-3 Figure number A-1 A-2 A-3 10.2.4.4. Assembly related information. Die type 03 04 05 Figure number A-1 A-2 A-3 10.3. Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details. 10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 24 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 20. APPLICABLE DOCUMENTS. 20.1 Government specifications, standards, and handbooks. Unless otherwise specified, the following specification, standard, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 20.2. Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 30. REQUIREMENTS 30.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit or function as described herein. 30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified in MIL-PRF-38535 and the manufacturer’s QM plan, for device classes Q and V and herein. 30.2.1 Die physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1, A-2 and A-3. 30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in 10.2.4.2 and on figure A-1, A-2 and A-3. 30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1, A-2 and A-3. 30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1, A-2 and A-3. 30.2.5 Truth table(s). The truth table(s) shall be as defined within paragraph 3.2.3 of the body of this document. 30.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.3.13 of the body of this document. 30.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. 30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 25 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed in 10.2 herein. The certification mark shall be a “QML” or ’Q’ as required by MIL-PRF-38535. 30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. 30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. 40. verification 40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM plan shall not effect the form, fit or function as described herein. 40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer QM plan. As a minimum it shall consist of: a) Wafer lot acceptance for Class V product using the criteria defined within MIL-STD-883 method 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 test method 2010 or the alternate procedures allowed within MIL-STD-883 method 5004. 40.3 Conformance inspection. 40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table II herein. Group E tests and conditions are as specified within paragraphs 4.4.4 and 4.4.4.1. 50. DIE CARRIER 50.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. 60 NOTES 60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and logistics purposes. 60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone (614)-692-0547. 60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined within MILPRF-38535 and MIL-STD-1331. 60.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have agreed to this drawing. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 26 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 Due to the complexity of the device, a graphical representation of the pad locations is not available. This figure shall be maintained and available from the device manufacturer. See subsequent pages for a table of pad locations. Die bonding pad locations and electrical functions Die physical dimensions-. Die size: 5,400 x 5,450 microns ( with scribe line ) Die thickness: 475 microns Interface materials. Top metallization: Aluminium + Copper Backside metallization: Bare Silicon Glassivation. Type: Oxinitride Thickness: 10,000 Angstroms Substrate: Single crystal silicon Assembly related information. Substrate potential: not connected Special assembly instructions: None FIGURE A-1. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 27 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-1. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 28 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-1. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 29 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-1. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 30 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-1. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 31 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-1. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 32 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 Due to the complexity of the device, a graphical representation of the pad locations is not available. This figure shall be maintained and available from the device manufacturer. See subsequent pages for a table of pad locations. Die bonding pad locations and electrical functions Die physical dimensions-. Die size: 8,600 x 8,510 microns ( with scribe line ) Die thickness: 475 microns Interface materials. Top metallization: Aluminium + Copper Backside metallization: Bare Silicon Glassivation. Type: Oxinitride Thickness: 10,000 Angstroms Substrate: Single crystal silicon Assembly related information. Substrate potential: not connected Special assembly instructions: None FIGURE A-2. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 33 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-2. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 34 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-2. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 35 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-2. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 36 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-2. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 37 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-2. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 38 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-2. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 39 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-2. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 40 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-2. Die bonding pad locations and electrical functions – Continued STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 41 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 Due to the complexity of the device, a graphical representation of the pad locations is not available. This figure shall be maintained and available from the device manufacturer. See subsequent pages for a table of pad locations. Die bonding pad locations and electrical functions Die physical dimensions-. Die size: 11,300 x 11,610 microns ( with scribe line ) Die thickness: 475 microns Interface materials. Top metallization: Aluminium + Copper Backside metallization: Bare Silicon Glassivation. Type: Oxinitride Thickness: 10,000 Angstroms Substrate: Single crystal silicon Assembly related information. Substrate potential: not connected Special assembly instructions: None FIGURE A-3. Die bonding pad locations and electrical functions STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 42 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-3. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 43 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-3. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 44 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-3. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 45 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-3. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 46 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-3. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 47 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-3. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 48 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-3. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 49 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-3. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 50 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-3. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 51 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-00B03 FIGURE A-3. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-00B03 A REVISION LEVEL D SHEET 52 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 08-03-17 Approved sources of supply for SMD 5962-00B03 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor Similar PIN 2/ 5962-00B0303Q4C 3/ F7400 MMFW-G2044PHxxxMQ 5962-00B0303V4C 3/ F7400 SMFW-G2044PHxxxSV 5962R00B0303V4C 3/ F7400 SMFW-G2044PHxxxSR 5962-00B0303Q9A 3/ F7400 MM0-G2044PHxxxMQ 5962-00B0303V9A 3/ F7400 SM0-G2044PHxxxSV 5962-00B0303QNC 3/ F7400 MMF7-G2044PHxxxMQ 5962-00B0303VNC 3/ F7400 SMF7-G2044PHxxxSV 5962R00B0303VNC 3/ F7400 SMF7-G2044PHxxxSR 5962-00B0304Q9A 3/ F7400 MM0-G2142PHxxxMQ 5962-00B0304V9A 3/ F7400 SM0-G2142PHxxxSV 5962-00B0304Q5C 3/ F7400 MMF9-G2142PHxxxMQ 4/ MMK9-G2142PHxxxMQ 5/ 5962-00B0304V5C 3/ F7400 SMF9-G2142PHxxxSV 4/ SMK9-G2142PHxxxSV 5/ 5962R00B0304V5C 3/ F7400 SMF9-G2142PHxxxSR 4/ SMK9-G2142PHxxxSR 5/ 5962-00B0304Q4C 3/ F7400 MMFW-G2142PHxxxMQ 5962-00B0304V4C 3/ F7400 SMFW-G2142PHxxxSV 5962R00B0304V4C 3/ F7400 SMFW-G2142PHxxxSR 5962-00B0304QNC 3/ F7400 MMF7-G2142PHxxxMQ 5962-00B0304VNC 3/ F7400 SMF7-G2142PHxxxSV 5962R00B0304VNC 3/ F7400 SMF7-G2142PHxxxSR 5962-00B0304Q6C 3/ F7400 MMKZ-G2142PHxxxMQ 5962-00B0304V6C 3/ F7400 SMKZ-G2142PHxxxSV 5962R00B0304V6C 3/ F7400 SMKZ-G2142PHxxxSR Standard microcircuit drawing PIN 1/ 1/ 2/ 3/ 4/ 5/ Vendor CAGE number Vendor Similar PIN 2/ 5962-00B0305Q9A 3/ F7400 MM0-G2270PHxxxMQ 5962-00B0305V9A 3/ F7400 SM0-G2270PHxxxSV 5962-00B0305Q5C 3/ F7400 MMF9-G2270PHxxxMQ 4/ MMK9-G2270PHxxMQ 5/ 5962-00B0305V5C 3/ F7400 SMF9-G2270PHxxxSV 4/ SMK9-G2270PHxxxSV 5/ 5962R00B0305V5C 3/ F7400 SMF9-G2270PHxxxSR 4/ SMK9-G2270PHxxxSR 5/ 5962-00B0305Q4C 3/ F7400 MMFW-G2270PHxxxMQ 5962-00B0305V4C 3/ F7400 SMFW-G2270PHxxxSV 5962R00B0305V4C 3/ F7400 SMFW-G2270PHxxxSR 5962-00B0305QNC 3/ F7400 MMF7-G2270PHxxxMQ 5962-00B0305VNC 3/ F7400 SMF7-G2270PHxxxSV 5962R00B0305VNC 3/ F7400 SMF7-G2270PHxxxSR 5962-00B0305Q6C 3/ F7400 MMKZ-G2270PHxxxMQ 5962-00B0305V6C 3/ F7400 SMKZ-G2270PHxxxSV 5962R00B0305V6C 3/ F7400 SMKZ-G2270PHxxxSR 5962-00B0305Q7C 3/ F7400 MMYC-G2270PHxxxMQ 5962-00B0305V7C 3/ F7400 SMYC-G2270PHxxxSV 5962R00B0305V7C 3/ F7400 SMYC-G2270PHxxxSR The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. The “xxx” is reserved to indicate the customer specific code Due to the nature of this SMD, the standard microcircuit drawing PIN and corresponding vendor similar PIN shall be specified in the AID. For unformed leads. For formed leads. Vendor CAGE number F7400 Vendor name and address Atmel La Chantrerie 44306 Nantes Cedex3 France The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.