BGA7124 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Rev. 3 — 9 September 2010 Product data sheet 1. Product profile 1.1 General description The BGA7124 MMIC is a one-stage amplifier, available in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and superior performance up to 2700 MHz. Its power saving features include easy quiescent current adjustment enabling class-AB operation and logic-level shutdown control to reduce the supply current to 4 μA. 1.2 Features and benefits 400 MHz to 2700 MHz frequency operating range 16 dB small signal gain at 2 GHz 25 dBm output power at 1 dB gain compression Integrated active biasing External matching allows broad application optimization of the electrical performance 3.3 V or 5 V single supply operation All pins ESD protected 1.3 Applications Wireless infrastructure (base station, repeater, backhaul systems) Broadband CPE/MoCA Industrial applications E-metering Satellite Master Antenna TV (SMATV) WLAN/ISM/RFID 1.4 Quick reference data Table 1. Quick reference data Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V; ICC = 130 mA; Tcase = 25 °C; unless otherwise specified. Symbol Parameter Conditions ICC supply current f frequency Gp power gain f = 2140 MHz PL(1dB) output power at 1 dB gain compression f = 2140 MHz IP3O output third-order intercept point VCC = 5.0 V f = 2140 MHz Min Typ Max Unit [1] 50 - 170 mA [2] 400 - 2700 MHz 14.5 16 [3] 17.5 dB 23.5 24.5 - dBm 34.5 37.5 - dBm [1] The supply current is adjustable; see Section 8.1 “Supply current adjustment”. [2] Operation outside this range is possible but not guaranteed. [3] PL = 11 dBm per tone; spacing = 1 MHz. BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 2. Pinning information 2.1 Pinning terminal 1 index area n.c. 1 VCC(RF) 2 8 ICQ_ADJ 7 RF_IN 6 SHDN 5 VCC(BIAS) BGA7124 VCC(RF) 3 n.c. 4 GND PAD 014aab046 Transparent top view Fig 1. HVSON8 package pin configuration 2.2 Pin description Table 2. Pin description Symbol Pin Description n.c. 1, 4 not connected VCC(RF) 2, 3 RF output for the power amplifier and DC supply input for the RF transistor collector [1] VCC(BIAS) 5 bias supply voltage [2] SHDN 6 shutdown control function enabled/disabled RF_IN 7 RF input for the power amplifier [1] ICQ_ADJ 8 quiescent collector current adjustment controlled by an external resistor GND GND pad RF and DC ground[3] [1] This pin is DC-coupled and requires an external DC-blocking capacitor. [2] RF decoupled. [3] The center metal base of the SOT908-1 also functions as heatsink for the power amplifier. 3. Ordering information Table 3. Ordering information Type number Package BGA7124 BGA7124 Product data sheet Name Description Version HVSON8 plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 × 3 × 0.85 mm SOT908-1 All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 2 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 4. Functional diagram VCC SHDN 6 INPUT MATCH VCC(BIAS) ICQ_ADJ 5 8 BIAS ENABLE BANDGAP R2 V/I CONVERTER R1 RF_OUT 2, 3 VCC(RF) RF_IN 7 OUTPUT MATCH GND 014aab047 Fig 2. Functional diagram 5. Shutdown control Table 4. Mode Shutdown control settings Mode description Function description Pin SHDN Vctrl(sd) (V) Ictrl(sd) (μA) Min Max Min Max Idle medium power MMIC fully off; minimal supply current shutdown control enabled 0 0 0.7 - 2 TX medium power MMIC transmit mode shutdown control disabled 1 2.5 VCC(BIAS) - 9 BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 3 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 6. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit RF supply voltage [1] - 6.0 V VCC(BIAS) bias supply voltage [1] - 6.0 V ICC supply current 50 200 mA 0.0 VCC(BIAS) V - 20 dBm VCC(RF) Parameter Conditions [1][2] [3] Vctrl(sd) shutdown control voltage Pi(RF) RF input power Tcase case temperature −40 +85 °C Tj junction temperature - 150 °C VESD electrostatic discharge voltage Human Body Model (HBM); According JEDEC standard 22-A114E - 2000 V Charged Device Model (CDM); According JEDEC standard 22-C101B - 500 V [1] See Figure 3 for safe operating area. [2] The supply current is adjustable; see Section 8.1 “Supply current adjustment”. [3] If Vctrl(sd) exceeds VCC(BIAS), the internal ESD circuit can be damaged. To prevent this, it is recommended that the Ictrl(sd) is limited to 20 mA. If the SHDN function is not used, the SHDN pin should be connected to the VCC(BIAS) pin. 014aab048 250 ICC (mA) 200 150 100 50 2 3 4 5 6 7 VCC(RF) (V) Exceeding the safe operating area limits may cause serious damage to the product. The impact on ICC due to the spread of the external ICQ resistor (R2) should be taken into account. The product-spread on ICC should be taken into account (see Section 8 “Static characteristics”). Fig 3. BGA7124 Product data sheet BGA7124 DC safe operating area All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 4 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 7. Thermal characteristics Table 6. Symbol Rth(j-mb) [1] Thermal characteristics Parameter Conditions Typ Max Unit thermal resistance from junction to mounting base Tcase = 85 °C; VCC = 5 V; ICC = 130 mA [1] 32 - K/W defined as thermal resistance from junction to GND paddle. 8. Static characteristics Table 7. Characteristics Input and output impedances matched to 50 Ω, pin SHDN = HIGH (shutdown disabled). Typical values at VCC = 3.3 V or VCC = 5 V; Tcase = 25 °C; unless otherwise specified. Symbol Parameter ICC Conditions supply current Min Typ Max Unit [1] 50 - 200 mA R1 = 0 Ω; R2 = 1330 Ω [2] 115 130 145 mA R1 = 2.2 Ω; R2 = 1070 Ω [2] 135 160 185 mA [1] 50 - 170 mA R1 = 0 Ω; R2 = 1960 Ω [2] 110 130 150 mA R1 = 2.2 Ω; R2 = 1650 Ω [2] 125 150 175 mA - 4 6 μA VCC = 3.3 V VCC = 5.0 V during shutdown; pin SHDN = LOW (shutdown enabled) [1] The supply current is adjustable; see Section 8.1 “Supply current adjustment”. [2] See Section 12 “Application information”. 8.1 Supply current adjustment The supply current can be adjusted by changing the value of external ICQ resistor (R2); (see Figure 4). BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 5 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 014aab049 170 014aab050 200 ICC (mA) ICC (mA) 170 130 140 VCC = 5 V; R1 = 0 VCC = 3.3 V; R1 = 0 110 90 80 50 1.6 2.0 2.4 2.8 3.2 3.6 50 0.9 4.0 4.4 R2 (kΩ) a. 5 V supply voltage. Fig 4. 1.4 1.9 2.4 2.9 3.4 R2 (kΩ) b. 3.3 V supply voltage Supply current as a function of the value of R2 9. Dynamic characteristics Table 8. Characteristics at VCC = 5 V Input and output impedances matched to 50 Ω, pin SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V; ICC = 130 mA; Tcase = 25 °C; see Section 12 “Application information”; unless otherwise specified. Symbol Parameter f frequency Gp power gain Conditions Min Typ Max Unit 400 - 2700 MHz f = 940 MHz - 22.7 - dB f = 1960 MHz - 16.4 - dB 14.5 16.0 17.5 dB - 14.2 - dB [1] for small signals f = 2140 MHz f = 2445 MHz PL(1dB) output power at 1 dB gain compression [2] f = 940 MHz - 25.0 - dBm f = 1960 MHz - 24.5 - dBm f = 2140 MHz IP3O NF output third-order intercept point noise figure BGA7124 Product data sheet 23.5 24.5 - dBm f = 2445 MHz [2] - 23.5 - dBm f = 940 MHz [3] - 38.5 - dBm f = 1960 MHz [3] - 38.0 - dBm f = 2140 MHz [3] 34.5 37.5 - dBm f = 2445 MHz [2][3] - 36.0 - dBm f = 940 MHz [4] - 5.2 - dB f = 1960 MHz [4] - 4.6 - dB f = 2140 MHz [4] - 4.8 6.5 dB f = 2445 MHz [2][4] - 5.4 - dB All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 6 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Table 8. Characteristics at VCC = 5 V …continued Input and output impedances matched to 50 Ω, pin SHDN = HIGH (shutdown disabled). Typical values at VCC = 5 V; ICC = 130 mA; Tcase = 25 °C; see Section 12 “Application information”; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit RLin input return loss f = 940 MHz - −15 - dB f = 1960 MHz - −11 - dB f = 2140 MHz - −17 - dB - −13 - dB f = 940 MHz - −8 - dB f = 1960 MHz - −12 - dB f = 2140 MHz - −15 - dB - −25 - dB f = 2445 MHz RLout output return loss f = 2445 MHz [1] Operation outside this range is possible but not guaranteed. [2] ICC = 150 mA; see Section 12 “Application information”. [3] PL = 11 dBm per tone; spacing = 1 MHz. [4] Defined at Pi = −40 dBm; small signal conditions. BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 [2] [2] © NXP B.V. 2010. All rights reserved. 7 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Table 9. Characteristics at VCC = 3.3 V Input and output impedances matched to 50 Ω, pin SHDN = HIGH (shutdown disabled). Typical values at VCC = 3.3 V; ICC = 130 mA; Tcase = 25 °C, see Section 12 “Application information”; unless otherwise specified. Symbol Parameter f frequency Gp power gain Conditions [1] f = 2445 MHz IP3O output third-order intercept point noise figure - 22.5 - dB - 13.8 - dB - 23.5 - dBm - 22.0 - dBm f = 940 MHz - 36.4 - dBm [2][3] - 35.2 - dBm [4] - 5.5 - dB [2][4] - 5.5 - dB - −15 - dB f = 940 MHz output return loss [2] f = 940 MHz f = 2445 MHz [1] Operation outside this range is possible but not guaranteed. [2] ICC = 160 mA; see Section 12 “Application information”. [3] PL= 11 dBm per tone; spacing = 1 MHz. [4] Defined at Pi = −40 dBm; small signal conditions. Product data sheet MHz [3] f = 940 MHz input return loss BGA7124 Unit 2700 [2] f = 2445 MHz RLout Max - f = 2445 MHz f = 2445 MHz RLin [2] output power at 1 dB gain compression f = 940 MHz f = 2445 MHz NF Typ 400 for small signals f = 940 MHz PL(1dB) Min All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 [2] - −10 - dB - −9 - dB - −25 - dB © NXP B.V. 2010. All rights reserved. 8 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 9.1 Scattering parameters Table 10. Scattering parameters at 5 V, MMIC only VCC = 5 V; ICC = 130 mA; Tcase = 25 °C. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) 400 0.85 161.56 22.94 82.35 0.01 17.02 0.46 −156.50 500 0.90 159.44 11.82 82.58 0.01 27.08 0.63 176.13 600 0.90 152.15 9.98 73.86 0.01 24.10 0.64 169.61 700 0.89 145.75 8.59 66.00 0.01 21.41 0.64 164.34 800 0.88 139.33 7.55 58.86 0.02 18.47 0.65 159.29 900 0.87 133.19 6.74 51.66 0.02 14.00 0.65 154.44 1000 0.87 127.07 6.14 45.11 0.02 11.25 0.65 149.58 1100 0.87 120.67 5.61 38.20 0.02 7.99 0.65 144.25 1200 0.87 114.18 5.19 31.60 0.02 4.20 0.64 139.60 1300 0.86 107.68 4.82 25.08 0.02 0.31 0.64 134.85 1400 0.86 100.86 4.51 18.49 0.02 −4.01 0.63 130.13 1500 0.86 94.14 4.23 11.74 0.02 −8.65 0.63 125.02 1600 0.86 87.48 3.99 5.25 0.03 −13.15 0.63 120.13 1700 0.86 80.83 3.77 −1.50 0.03 −18.16 0.62 114.98 1800 0.86 74.14 3.56 −8.13 0.03 −23.28 0.62 109.78 1900 0.86 67.39 3.37 −14.94 0.03 −28.54 0.62 104.46 2000 0.86 60.70 3.19 −21.68 0.03 −33.68 0.63 99.01 2100 0.86 53.97 3.02 −28.68 0.03 −39.37 0.63 93.58 2200 0.86 47.78 2.85 −35.14 0.03 −44.84 0.63 88.17 2300 0.86 41.57 2.69 −41.70 0.03 −50.27 0.64 83.06 2400 0.86 35.43 2.54 −48.11 0.03 −55.62 0.64 78.10 2500 0.86 29.74 2.39 −54.19 0.04 −60.71 0.65 73.31 2600 0.86 24.79 2.27 −60.06 0.04 −65.48 0.65 68.64 2700 0.85 19.58 2.15 −66.14 0.04 −70.66 0.66 64.16 BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 9 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Table 11. Scattering parameters at 3.3 V, MMIC only VCC = 3.3 V; ICC = 130 mA; Tcase = 25 °C. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) 400 0.84 161.94 21.25 73.81 0.01 17.66 0.57 −154.41 500 0.91 159.25 11.56 79.01 0.01 28.15 0.65 178.05 600 0.90 151.98 9.67 70.71 0.01 24.80 0.66 171.32 700 0.90 145.57 8.29 63.37 0.01 21.89 0.66 165.59 800 0.89 139.18 7.26 56.54 0.02 19.04 0.66 160.37 900 0.88 132.87 6.48 49.74 0.02 15.35 0.66 155.28 1000 0.88 126.78 5.90 43.30 0.02 11.89 0.66 150.23 1100 0.87 120.46 5.39 36.53 0.02 8.33 0.66 144.88 1200 0.87 113.94 4.97 30.05 0.02 4.50 0.65 140.03 1300 0.87 107.48 4.62 23.62 0.02 0.35 0.65 135.35 1400 0.87 100.69 4.32 17.15 0.02 −3.92 0.64 130.48 1500 0.86 93.93 4.05 10.48 0.02 −8.62 0.64 125.46 1600 0.86 87.28 3.81 4.05 0.03 −13.28 0.64 120.31 1700 0.86 80.71 3.61 −2.66 0.03 −18.26 0.64 115.13 1800 0.86 74.00 3.40 −9.21 0.03 −23.51 0.64 109.99 1900 0.86 67.27 3.22 −15.97 0.03 −28.87 0.63 104.66 2000 0.86 60.64 3.05 −22.71 0.03 −34.22 0.64 99.36 2100 0.86 53.84 2.89 −29.68 0.03 −39.95 0.64 93.93 2200 0.86 47.60 2.72 −36.12 0.03 −45.44 0.64 88.55 2300 0.86 41.43 2.57 −42.66 0.03 −51.06 0.65 83.38 2400 0.86 35.35 2.42 −49.01 0.04 −56.53 0.65 78.44 2500 0.85 29.64 2.28 −55.12 0.04 −61.72 0.66 73.56 2600 0.85 24.72 2.16 −60.91 0.04 −66.76 0.66 68.80 2700 0.85 19.59 2.04 −66.91 0.04 −71.84 0.67 64.30 10. Reliability information Table 12. Reliability Life test Conditions HTOL Intrinsic failure rate According JESD85; confidence level 60 %; Tj = 55 °C; activation energy = 0.7 eV; acceleration factor determined according Arrhenius 4 11. Moisture sensitivity Table 13. BGA7124 Product data sheet Moisture sensitivity level Test methodology Class JESD-22-A113 1 All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 10 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 12. Application information 12.1 5 V applications 12.1.1 920 MHz to 960 MHz C8 R1 J3 VCC C10 C7 C9 L2 VCC(BIAS) 50 Ω MSL1 C1 MSL2 MSL3 J1 VCC(RF) RF_IN MSL4 L1 MSL5 MSL6 MSL7 C6 50 Ω MSL8 J2 RF_OUT C2 C3 C4 BGA7124 ICQ_ADJ C5 SHDN R2 014aab051 enable See Table 14 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm. Fig 5. 5 V/130 mA application schematic; 920 MHz to 960 MHz 014aab052 30 PL(1dB) (dBm) 014aab053 28 Gp (dB) 28 26 (1) (2) 26 (1) 24 (2) (3) 24 (3) 22 22 20 20 0.92 0.93 0.94 0.95 18 0.92 0.96 0.93 f (GHz) (1) Tcase = −40 °C. (2) Tcase = 25 °C. (2) Tcase = 25 °C. (3) Tcase = 85 °C. (3) Tcase = 85 °C. Output power at 1 dB gain compression as a function of frequency BGA7124 Product data sheet 0.95 0.96 f (GHz) (1) Tcase = −40 °C. Fig 6. 0.94 Fig 7. Power gain as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 11 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 014aab054 0 014aab055 42 RLin, RLout, ISL (dB) IP3O (dBm) RLout −10 40 (1) RLin (2) (3) −20 38 ISL −30 0.92 0.93 0.94 0.95 36 0.92 0.96 0.93 0.94 0.95 0.96 f (GHz) f (GHz) Tcase = 25 °C. (1) Tcase = −40 °C. (2) Tcase = 25 °C. (3) Tcase = 85 °C. Fig 8. Input return loss, output return loss and isolation as a function of frequency Fig 9. Output third-order intercept point as a function of frequency GND GND VCC ena ble n.c. GND J3 C9 R1 C8 J1 J2 C10 MSL2 C7 MSL6 MSL7 L1 MSL1 C1 L2 MSL3 C2 C6 C4 C3 J I HGF EDCBA MSL8 C5 1 2 3 4 5 6 7 8 9 10 12 MSL4 MSL5 11 13 RF in RF out R2 014aab056 See Table 14 for a list of components. Fig 10. 5 V/130 mA application reference board; 920 MHz to 960 MHz BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 12 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Table 14. 5 V/130 mA application list of components; 920 MHz to 960 MHz See Figure 5 and Figure 10 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1, C6 capacitor 68 pF DC blocking Murata GRM1885C1H680JA01D C2, C3 capacitor 3.3 pF input match Murata GRM1885C1H3R3CZ01D C4 capacitor 3.9 pF output match Murata GRM1885C1H3R9CZ01D C5 capacitor 1.0 pF output match Murata GRM1885C1H1R0CZ01D C7 capacitor 68 pF RF decoupling Murata GRM1885C1H680JA01D C8 capacitor 100 nF DC decoupling AVX 0603YC104KAT2A C9 capacitor 10 μF DC decoupling AVX 1206ZG106ZAT2A C10 capacitor 12 pF noise decoupling Murata GRM1555C1H120JZ01D J1, J2 RF connector SMA Emerson Network Power 142-0701-841 J3 DC connector 6-pins MOLEX L1 inductor 2.2 nH output match Tyco electronics 36501J2N2JTDG L2 inductor 22 nH DC feed Tyco electronics 36501J022JTDG MSL1[1] micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match MSL2[1] micro stripline 1.14 mm × 0.8 mm × 2.95 mm input match MSL3[1] micro stripline 1.14 mm × 0.8 mm × 7.75 mm input match MSL4[1] micro stripline 1.14 mm × 0.8 mm × 23.4 mm output match MSL5[1] micro stripline 1.14 mm × 0.8 mm × 2.2 mm output match MSL6[1] micro stripline 1.14 mm × 0.8 mm × 3.15 mm output match MSL7[1] micro stripline 1.14 mm × 0.8 mm × 2.3 mm output match MSL8[1] micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match R1 resistor 0Ω R2 resistor (trimmer) 2 kΩ [1] Multicomp MC 0.063W 0603 0R bias adjustment Bourns 3214W-1-202E MSL1 to MSL8 dimensions specified as Width (W), Spacing (S) and Length (L). BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 13 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 12.1.2 1930 MHz to 1990 MHz VCC C6 R1 J3 C5 C7 L1 VCC(BIAS) 50 Ω MSL1 C1 MSL2 J1 VCC(RF) RF_IN MSL3 MSL4 MSL5 C4 MSL6 50 Ω J2 RF_OUT C2 C3 BGA7124 ICQ_ADJ SHDN R2 enable 014aab057 See Table 15 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm. Fig 11. 5 V/130 mA application schematic; 1930 MHz to 1990 MHz 014aab058 30 PL(1dB) (dBm) 014aab059 20 Gp (dB) 28 (1) 18 (2) (1) 26 16 (2) 24 (3) 14 (3) 22 20 1.93 12 1.95 1.97 1.99 10 1.93 1.95 f (GHz) (1) Tcase = −40 °C. (2) Tcase = 25 °C. (2) Tcase = 25 °C. (3) Tcase = 85 °C. (3) Tcase = 85 °C. Fig 12. Output power at 1 dB gain compression as a function of frequency Product data sheet 1.99 f (GHz) (1) Tcase = −40 °C. BGA7124 1.97 Fig 13. Power gain as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 14 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 014aab060 0 014aab061 40 RLin, RLout, ISL (dB) IP3O (dBm) (2) (1) −10 38 RLout (3) RLin −20 36 ISL −30 1.93 1.95 1.97 34 1.93 1.99 1.95 1.97 f (GHz) 1.99 f (GHz) Tcase = 25 °C. (1) Tcase = −40 °C. (2) Tcase = 25 °C. (3) Tcase = 85 °C. Fig 14. Input return loss, output return loss and isolation as a function of frequency Fig 15. Output third-order intercept point as a function of frequency GND GND VCC enable n.c. GND J3 C7 R1 C6 J1 J2 C5 MSL4 MSL5 L1 MSL1 C1 MSL2 MSL3 C2 C4 MSL6 C3 J I HGF EDCBA 1 2 3 4 5 6 7 8 9 10 12 11 13 RF in RF out R2 014aab062 See Table 15 for a list of components. Fig 16. 5 V/130 mA application reference board; 1930 MHz to 1990 MHz BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 15 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Table 15. 5 V/130 mA application list of components; 1930 MHz to 1990 MHz See Figure 11 and Figure 16 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1, C4 capacitor 15 pF DC blocking Murata GRM1885C1H150JA01D C2 capacitor 2.2 pF input match Murata GRM1885C1H2R2CZ01D C3 capacitor 1.2 pF output match Murata GRM1885C1H1R2CZ01D C5 capacitor 15 pF RF decoupling Murata GRM1885C1H150JA01D C6 capacitor 100 nF DC decoupling AVX 0603YC104KAT2A C7 capacitor 10 μF DC decoupling AVX 1206ZG106ZAT2A J1, J2 RF connector SMA Emerson Network Power 142-0701-841 J3 DC connector 6-pins MOLEX L1 inductor 22 nH DC feed MSL1[1] micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match MSL2[1] micro stripline 1.14 mm × 0.8 mm × 10.8 mm input match MSL3[1] micro stripline 1.14 mm × 0.8 mm × 5.8 mm output match MSL4[1] micro stripline 1.14 mm × 0.8 mm × 2.2 mm output match MSL5[1] Tyco electronics 36501J022JTDG micro stripline 1.14 mm × 0.8 mm × 3.7 mm output match MSL6[1] micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match R1 resistor 0Ω R2 resistor (trimmer) 2 kΩ [1] Multicomp MC 0.063W 0603 0R bias adjustment Bourns 3214W-1-202E MSL1 to MSL6 dimensions specified as Width (W), Spacing (S) and Length (L). 12.1.3 2110 MHz to 2170 MHz C6 R1 J3 VCC C5 C7 L1 VCC(BIAS) 50 Ω MSL1 C1 MSL2 J1 VCC(RF) RF_IN MSL3 MSL4 MSL5 C4 MSL6 50 Ω J2 RF_OUT C2 BGA7124 ICQ_ADJ C3 SHDN R2 014aab063 enable See Table 16 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm. Fig 17. 5 V/130 mA application schematic; 2110 MHz to 2170 MHz BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 16 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 014aab064 30 PL(1dB) (dBm) 014aab065 20 Gp (dB) 28 18 (1) (2) 26 16 (1) (3) (2) 24 14 (3) 22 12 20 2.11 2.13 2.15 2.17 10 2.11 2.13 2.15 f (GHz) (1) Tcase = −40 °C. (1) Tcase = −40 °C. (2) Tcase = 25 °C. (2) Tcase = 25 °C. (3) Tcase = 85 °C. (3) Tcase = 85 °C. Fig 18. Output power at 1 dB gain compression as a function of frequency 014aab066 0 2.17 f (GHz) RLin, RLout, ISL (dB) Fig 19. Power gain as a function of frequency 014aab067 40 IP3O (dBm) −10 38 (3) RLout (2) RLin (1) −20 36 ISL −30 2.11 2.13 2.15 2.17 34 2.11 2.13 2.15 2.17 f (GHz) f (GHz) Tcase = 25 °C. (1) Tcase = −40 °C. (2) Tcase = 25 °C. (3) Tcase = 85 °C. Fig 20. Input return loss, output return loss and isolation as a function of frequency BGA7124 Product data sheet Fig 21. Output third-order intercept point as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 17 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier GND GND VCC enable n.c. GND J3 C7 R1 C6 J1 J2 C5 MSL4 MSL5 L1 MSL1 C1 MSL2 MSL3 C2 C4 MSL6 C3 J I HGF EDCBA 1 2 3 4 5 6 7 8 9 10 12 11 13 RF in RF out R2 014aab068 See Table 16 for a list of components. Fig 22. 5 V/130 mA application reference board; 2110 MHz to 2170 MHz Table 16. 5 V/130 mA application list of components; 2110 MHz to 2170 MHz See Figure 17 and Figure 22 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value C1, C4 capacitor 15 pF DC blocking Murata GRM1885C1H150JA01D C2 capacitor 2.7 pF input match Murata GRM1885C1H2R7CZ01D C3 capacitor 1.5 pF output match Murata GRM1885C1H1R5CZ01D C5 capacitor 15 pF RF decoupling Murata GRM1885C1H150JA01D C6 capacitor 100 nF DC decoupling AVX 0603YC104KAT2A C7 capacitor 10 μF DC decoupling AVX 1206ZG106ZAT2A J1, J2 RF connector SMA Emerson Network Power 142-0701-841 J3 DC connector 6-pins MOLEX L1 inductor 22 nH DC feed MSL1[1] micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match MSL2[1] micro stripline 1.14 mm × 0.8 mm × 10.8 mm input match MSL3[1] micro stripline 1.14 mm × 0.8 mm × 5.8 mm output match MSL4[1] micro stripline 1.14 mm × 0.8 mm × 2.5 mm output match MSL5[1] micro stripline 1.14 mm × 0.8 mm × 3.5 mm output match BGA7124 Product data sheet Function All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 Remarks Tyco electronics 36501J022JTDG © NXP B.V. 2010. All rights reserved. 18 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Table 16. 5 V/130 mA application list of components; 2110 MHz to 2170 MHz …continued See Figure 17 and Figure 22 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function MSL6[1] micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match R1 resistor 0Ω R2 resistor (trimmer) 2 kΩ [1] Remarks Multicomp MC 0.063W 0603 0R bias adjustment Bourns 3214W-1-202E MSL1 to MSL6 dimensions specified as Width (W), Spacing (S) and Length (L). 12.1.4 2405 MHz to 2485 MHz VCC C7 R1 J3 C6 C8 L1 VCC(BIAS) 50 Ω MSL1 C1 MSL2 VCC(RF) RF_IN J1 MSL3 MSL4 C5 50 Ω MSL5 J2 RF_OUT C2 BGA7124 ICQ_ADJ C3 C4 SHDN R2 014aab069 enable See Table 17 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm. Fig 23. 5 V/130 mA application schematic; 2405 MHz to 2485 MHz BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 19 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 014aab070 26 PL(1dB) (dBm) Gp (dB) (3) 24 014aab071 20 18 (2) (1) 22 16 (1) (2) 20 14 18 12 16 2.405 2.425 2.445 2.465 2.485 f (GHz) 10 2.405 (3) 2.425 (1) Tcase = −40 °C. (1) Tcase = −40 °C. (2) Tcase = 25 °C. (2) Tcase = 25 °C. (3) Tcase = 85 °C. (3) Tcase = 85 °C. Fig 24. Output power at 1 dB gain compression as a function of frequency 014aab072 0 RLin, RLout, ISL (dB) 2.445 2.465 2.485 f (GHz) Fig 25. Power gain as a function of frequency 014aab073 38 IP3O (dBm) (3) −10 36 (2) RLin (1) −20 34 ISL RLout −30 2.405 2.425 2.445 2.465 2.485 f (GHz) Tcase = 25 °C. 32 2.405 2.425 2.445 2.465 2.485 f (GHz) (1) Tcase = −40 °C. (2) Tcase = 25 °C. (3) Tcase = 85 °C. Fig 26. Input return loss, output return loss and isolation as a function of frequency BGA7124 Product data sheet Fig 27. Output third-order intercept point as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 20 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier GND GND VCC enable n.c. GND J3 C8 R1 C7 J1 J2 C6 L1 MSL1 C1 MSL2 MSL3 C2 C3 J I HGF EDCBA MSL4 C4 C5 MSL5 1 2 3 4 5 6 7 8 9 10 12 11 13 RF in RF out R2 014aab074 See Table 17 for a list of components. Fig 28. 5 V/130 mA application reference board; 2405 MHz to 2485 MHz Table 17. 5 V/130 mA application list of components; 2405 MHz to 2485 MHz See Figure 23 and Figure 28 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function C1, C5 capacitor 12 pF DC blocking Murata GRM1885C1H120JA01D C2 capacitor 2.2 pF input match Murata GRM1885C1H2R2CZ01D C3 capacitor 0.82 pF output match Murata GRM1885C1HR82CZ01D C4 capacitor 0.68 pF output match Murata GRM1885C1HR68CZ01D C6 capacitor 12 pF RF decoupling Murata GRM1885C1H120JA01D C7 capacitor 100 nF DC decoupling AVX 0603YC104KAT2A C8 capacitor 10 μF DC decoupling AVX 1206ZG106ZAT2A J1, J2 RF connector SMA Emerson Network Power 142-0701-841 J3 DC connector 6-pins MOLEX L1 inductor 22 nH DC feed MSL1[1] micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match MSL2[1] micro stripline 1.14 mm × 0.8 mm × 10.8 mm input match MSL3[1] micro stripline 1.14 mm × 0.8 mm × 7.3 mm output match MSL4[1] micro stripline 1.14 mm × 0.8 mm × 4.3 mm output match BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 Remarks Tyco electronics 36501J022JTDG © NXP B.V. 2010. All rights reserved. 21 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Table 17. 5 V/130 mA application list of components; 2405 MHz to 2485 MHz …continued See Figure 23 and Figure 28 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function MSL5[1] micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match R1 resistor 2.2 Ω R2 resistor (trimmer) 2 kΩ [1] Remarks Multicomp MC 0.063W 0603 2R2 bias adjustment Bourns 3214W-1-202E MSL1 to MSL5 dimensions specified as Width (W), Spacing (S) and Length (L). 12.2 3.3 V applications 12.2.1 920 MHz to 960 MHz C8 R1 J3 VCC C7 C9 L2 VCC(BIAS) 50 Ω MSL1 C1 MSL2 MSL3 J1 VCC(RF) RF_IN MSL4 L1 MSL5 MSL6 MSL7 C6 MSL8 50 Ω J2 RF_OUT C2 C3 BGA7124 ICQ_ADJ C4 C5 SHDN R2 enable 014aab075 See Table 18 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm. Fig 29. 3.3 V/130 mA application schematic; 920 MHz to 960 MHz BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 22 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 014aab076 30 PL(1dB) (dBm) 014aab077 28 Gp (dB) 28 26 26 24 (1) (2) (1) (2) 24 (3) 22 (3) 22 20 20 0.92 0.93 0.94 0.95 0.96 18 0.92 0.93 0.94 0.95 f (GHz) (1) Tcase = −40 °C. (1) Tcase = −40 °C. (2) Tcase = 25 °C. (2) Tcase = 25 °C. (3) Tcase = 85 °C. (3) Tcase = 85 °C. Fig 30. Output power at 1 dB gain compression as a function of frequency 014aab078 0 RLin, RLout, ISL (dB) Fig 31. Power gain as a function of frequency 014aab079 40 IP3O (dBm) RLout −10 0.96 f (GHz) 38 RLin −20 (2) 36 (3) (1) ISL −30 0.92 0.93 0.94 0.95 0.96 34 0.92 0.93 0.94 0.95 0.96 f (GHz) f (GHz) Tcase = 25 °C. (1) Tcase = −40 °C. (2) Tcase = 25 °C. (3) Tcase = 85 °C. Fig 32. Input return loss, output return loss and isolation as a function of frequency BGA7124 Product data sheet Fig 33. Output third-order intercept point as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 23 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier GND GND VCC enable n.c. GND J3 C9 R1 C8 J1 J2 MSL2 MSL4 C7 MSL6 MSL7 L2 MSL1 C1 L1 MSL3 C2 C3 C6 C4 J I HGF EDCBA MSL8 C5 1 2 3 4 5 6 7 8 9 10 12 11 13 MSL5 RF in RF out R2 014aab080 See Table 18 for a list of components. Fig 34. 3.3 V/130 mA application reference board; 920 MHz to 960 MHz Table 18. 3.3 V/130 mA application list of components; 920 MHz to 960 MHz See Figure 29 and Figure 34 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1, C6 capacitor 68 pF DC blocking Murata GRM1885C1H680JA01D C2, C3 capacitor 3.3 pF input match Murata GRM1885C1H3R3CZ01D C4 capacitor 3.9 pF output match Murata GRM1885C1H3R9CZ01D C5 capacitor 1.0 pF output match Murata GRM1885C1H1R0CZ01D C7 capacitor 68 pF RF decoupling Murata GRM1885C1H680JA01D C8 capacitor 100 nF DC decoupling AVX 0603YC104KAT2A C9 capacitor 10 μF DC decoupling AVX 1206ZG106ZAT2A J1, J2 RF connector SMA Emerson Network Power 142-0701-841 J3 DC connector 6-pins MOLEX L1 inductor 2.2 nH output match Tyco electronics 36501J2N2JTDG L2 inductor 22 nH DC feed Tyco electronics 36501J022JTDG MSL1[1] micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match MSL2[1] micro stripline 1.14 mm × 0.8 mm × 2.95 mm input match MSL3[1] micro stripline 1.14 mm × 0.8 mm × 7.75 mm input match MSL4[1] micro stripline 1.14 mm × 0.8 mm × 23.4 mm output match MSL5[1] micro stripline 1.14 mm × 0.8 mm × 2.2 mm output match BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 24 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Table 18. 3.3 V/130 mA application list of components; 920 MHz to 960 MHz …continued See Figure 29 and Figure 34 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function MSL6[1] micro stripline 1.14 mm × 0.8 mm × 2.4 mm output match MSL7[1] micro stripline 1.14 mm × 0.8 mm × 2.3 mm output match MSL8[1] micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match R1 resistor 0Ω R2 resistor (trimmer) 2 kΩ [1] Remarks Multicomp MC 0.063W 0603 0R bias adjustment Bourns 3214W-1-202E MSL1 to MSL8 dimensions specified as Width (W), Spacing (S) and Length (L). 12.2.2 2405 MHz to 2485 MHz C7 R1 J3 VCC C6 C8 L1 VCC(BIAS) 50 Ω MSL1 C1 MSL2 J1 VCC(RF) RF_IN MSL3 MSL4 C5 MSL5 50 Ω J2 RF_OUT C2 BGA7124 ICQ_ADJ C3 C4 SHDN R2 enable 014aab081 See Table 19 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm Fig 35. 3.3 V/130 mA application schematic; 2405 MHz to 2485 MHz BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 25 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 014aab082 26 PL(1dB) (dBm) 014aab083 20 Gp (dB) 24 18 (3) (2) 22 16 (1) (1) (2) 20 14 (3) 18 12 16 2.405 2.425 2.445 2.465 2.485 f (GHz) 10 2.405 2.425 (1) Tcase = −40 °C. (1) Tcase = −40 °C. (2) Tcase = 25 °C. (2) Tcase = 25 °C. (3) Tcase = 85 °C. (3) Tcase = 85 °C. Fig 36. Output power at 1 dB gain compression as a function of frequency 014aab084 0 RLin, RLout, ISL (dB) 2.445 2.465 2.485 f (GHz) Fig 37. Power gain as a function of frequency 014aab085 38 IP3O (dBm) RLin −10 36 (2) −20 (1) 34 (3) ISL RLout −30 2.405 2.425 2.445 2.465 2.485 f (GHz) Tcase = 25 °C. 32 2.405 2.425 2.445 2.465 2.485 f (GHz) (1) Tcase = −40 °C. (2) Tcase = 25 °C. (3) Tcase = 85 °C. Fig 38. Input return loss, output return loss and isolation as a function of frequency BGA7124 Product data sheet Fig 39. Output third-order intercept point as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 26 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier GND GND VCC enable n.c. GND J3 C8 R1 C7 J1 J2 C6 L1 MSL1 C1 MSL2 MSL3 C2 C3 J I HGF EDCBA MSL4 C4 C5 MSL5 1 2 3 4 5 6 7 8 9 10 12 11 13 RF in RF out R2 014aab086 See Table 19 for a list of components. Fig 40. 3.3 V/130 mA application reference board; 2405 MHz to 2485 MHz Table 19. 3.3 V/130 mA application list of components; 2405 MHz to 2485 MHz See Figure 35 and Figure 40 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1, C5 capacitor 12 pF DC blocking Murata GRM1885C1H120JA01D C2 capacitor 2.2 pF input match Murata GRM1885C1H2R2CZ01D C3 capacitor 0.82 pF output match Murata GRM1885C1HR82CZ01D C4 capacitor 0.68 pF output match Murata GRM1885C1HR68CZ01D C6 capacitor 12 pF RF decoupling Murata GRM1885C1H120JA01D C7 capacitor 100 nF DC decoupling AVX 0603YC104KAT2A C8 capacitor 10 μF DC decoupling AVX 1206ZG106ZAT2A J1, J2 RF connector SMA Emerson Network Power 142-0701-841 J3 DC connector 6-pins MOLEX L1 inductor 22 nH MSL1[1] micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match MSL2[1] micro stripline 1.14 mm × 0.8 mm × 10.8 mm input match MSL3[1] micro stripline 1.14 mm × 0.8 mm × 7.3 mm output match MSL4[1] micro stripline 1.14 mm × 0.8 mm × 4.3 mm output match BGA7124 Product data sheet DC feed All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 Tyco electronics 36501J022JTDG © NXP B.V. 2010. All rights reserved. 27 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Table 19. 3.3 V/130 mA application list of components; 2405 MHz to 2485 MHz …continued See Figure 35 and Figure 40 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value MSL5[1] micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match R1 resistor 2.2 Ω R2 resistor (trimmer) 2 kΩ [1] Function Remarks Multicomp MC 0.063W 0603 2R2 bias adjustment Bourns 3214W-1-202E MSL1 to MSL5 dimensions specified as Width (W), Spacing (S) and Length (L). 12.3 PCB stack through via 35 μm (1 oz.) copper + 0.3 μm gold plating RF and analog routing RO4003C, 0.51 mm (20 mil) 35 μm (1 oz.) copper RF and analog ground (1) 0.2 mm (8 mil) 35 μm (1 oz.) copper analog routing FR4, 0.15 mm (6 mil) 35 μm (1 oz.) copper RF and analog ground 014aab087 (1) Pre-pregnated RO4003Cdielectric constant εr = 3.38 Fig 41. PCB stack BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 28 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 13. Package outline HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 x 3 x 0.85 mm SOT908-1 0 1 2 mm scale X B D A E A A1 c detail X terminal 1 index area e1 terminal 1 index area e v w b 1 4 M M C C A B C y1 C y L exposed tie bar (4×) Eh exposed tie bar (4×) 8 5 Dh DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D(1) Dh E(1) Eh e e1 L v w y y1 mm 1 0.05 0.00 0.3 0.2 0.2 3.1 2.9 2.25 1.95 3.1 2.9 1.65 1.35 0.5 1.5 0.5 0.3 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT908-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-09-26 05-10-05 MO-229 Fig 42. Package outline SOT908-1 (HVSON8) BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 29 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 14. Abbreviations Table 20. Abbreviations Acronym Description CPE Customer-Premises Equipment DC Direct Current ESD ElectroStatic Discharge HTOL High Temperature Operating Life ISM Industrial, Scientific and Medical MMIC Monolithic Microwave Integrated Circuit MoCA Multimedia over Coax Alliance RFID Radio Frequency IDentification SMA SubMiniature version A TX Transmit WLAN Wireless Local Area Network 15. Revision history Table 21. Revision history Document ID Release date Data sheet status Change notice Supersedes BGA7124 v.3 20100909 Product data sheet - BGA7124 v.2 Modifications: • • • • • • Figure 5 on page 11: MSL symbols have been corrected. Figure 11 on page 14: MSL symbols have been corrected. Figure 17 on page 16: MSL symbols have been corrected. Figure 23 on page 19: MSL symbols have been corrected. Figure 29 on page 22: MSL symbols have been corrected. Figure 35 on page 25: MSL symbols have been corrected. BGA7124 v.2 20100623 Product data sheet - BGA7124 v.1 BGA7124 v.1 20100421 Product data sheet - - BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 30 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 16.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 31 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BGA7124 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 September 2010 © NXP B.V. 2010. All rights reserved. 32 of 33 BGA7124 NXP Semiconductors 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier 18. Contents 1 1.1 1.2 1.3 1.4 2 2.1 2.2 3 4 5 6 7 8 8.1 9 9.1 10 11 12 12.1 12.1.1 12.1.2 12.1.3 12.1.4 12.2 12.2.1 12.2.2 12.3 13 14 15 16 16.1 16.2 16.3 16.4 17 18 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Shutdown control . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Supply current adjustment . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Scattering parameters . . . . . . . . . . . . . . . . . . . 9 Reliability information . . . . . . . . . . . . . . . . . . . 10 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 10 Application information. . . . . . . . . . . . . . . . . . 11 5 V applications . . . . . . . . . . . . . . . . . . . . . . . 11 920 MHz to 960 MHz . . . . . . . . . . . . . . . . . . . 11 1930 MHz to 1990 MHz . . . . . . . . . . . . . . . . . 14 2110 MHz to 2170 MHz . . . . . . . . . . . . . . . . . 16 2405 MHz to 2485 MHz . . . . . . . . . . . . . . . . . 19 3.3 V applications . . . . . . . . . . . . . . . . . . . . . . 22 920 MHz to 960 MHz . . . . . . . . . . . . . . . . . . . 22 2405 MHz to 2485 MHz . . . . . . . . . . . . . . . . . 25 PCB stack . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 29 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 30 Legal information. . . . . . . . . . . . . . . . . . . . . . . 31 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 31 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Contact information. . . . . . . . . . . . . . . . . . . . . 32 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 September 2010 Document identifier: BGA7124