BGA7027 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Rev. 1 — 11 August 2010 Preliminary data sheet 1. Product profile 1.1 General description The BGA7027 MMIC is a one-stage amplifier, offered in a low-cost surface-mount package. It delivers 28 dBm output power at 1 dB gain compression and a superior performance up to 2700 MHz. 1.2 Features and benefits 400 MHz to 2700 MHz frequency operating range 11 dB small signal gain at 2 GHz 28 dBm output power at 1 dB gain compression Integrated active biasing External matching allows broad application optimization of the electrical performance 5 V single supply operation ESD protection at all pins 1.3 Applications Broadband CPE/MoCA WLAN/ISM/RFID Wireless infrastructure (base station, repeater, backhaul systems) Industrial applications E-metering Satellite Master Antenna TV (SMATV) 1.4 Quick reference data Table 1. Quick reference data Input and output impedances matched to 50 Ω. Typical values at: ICC = 170 mA; VCC = 5 V; Tcase = 25 °C; unless otherwise specified. Symbol Parameter Conditions [1] f frequency Gp gain power PL(1dB) output power at 1 dB gain compression f = 2140 MHz IP3O output third-order intercept point f = 2140 MHz f = 2140 MHz [1] Operation outside this range is possible but not guaranteed. [2] PL = 17 dBm per tone; spacing = 1 MHz. [2] Min Typ Max Unit 400 - 2700 MHz - 11 - dB - 28 - dBm - 43 - dBm BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 VCC(RF) [1] 2 GND [2] 3 RF_IN [1] Graphic symbol 3 1 2 3 2 sym130 1 [1] This pin is DC-coupled and requires an external DC-blocking capacitor. [2] The center metal base of the SOT89 also functions as heatsink for the power amplifier. 3. Ordering information Table 3. Ordering information Type number BGA7027 Package Name Description Version - plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89 4. Functional diagram BIAS ENABLE RF_IN BANDGAP V/I CONVERTER 3 1 VCC(RF) 2 GND 014aab020 Fig 1. BGA7027 Preliminary data sheet Functional diagram All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 2 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage - 5.7 V Pi(RF) RF input power - <tbd> dBm Tcase case temperature −40 +85 °C Tj junction temperature - 150 °C VESD electrostatic discharge voltage Human Body Model (HBM); according to JEDEC standard 22-A114E - 2000 V Charged Device Model (CDM); according to JEDEC standard 22-C101B - 500 V 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 85 °C; VCC = 5 V; ICC = 170 mA 38 K/W 7. Static characteristics Table 6. Characteristics Input and output impedances matched to 50 Ω. Typical values at Tcase = 25 °C, unless otherwise specified. Symbol Parameter Conditions VCC supply voltage ICC supply current VCC = 5.0 V Min Typ Max Unit - 5.0 - V 145 170 195 mA 8. Dynamic characteristics Table 7. Characteristics Input and output impedances matched to 50 Ω. Typical values at VCC = 5 V; Tcase = 25 °C, NXP application circuit; unless otherwise specified. Symbol Parameter f frequency Gp gain power PL(1dB) BGA7027 Preliminary data sheet Conditions output power at 1 dB gain compression Min Typ [1] Max Unit 400 f = 940 MHz [2] - - 2700 MHz 19 - f = 1960 MHz [2] dB f = 2140 MHz [2] - 12 - dB - 11 - dB f = 940 MHz - 28 - dBm f = 1960 MHz - 28 - dBm f = 2140 MHz - 28 - dBm All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 3 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 7. Characteristics …continued Input and output impedances matched to 50 Ω. Typical values at VCC = 5 V; Tcase = 25 °C, NXP application circuit; unless otherwise specified. Symbol Parameter IP3O NF Conditions output third-order intercept point noise figure Min Typ Max Unit f = 940 MHz [3] - 42 - dBm f = 1960 MHz [3] - 43 - dBm f = 2140 MHz [3] - 43 - dBm f = 940 MHz - 2.5 - dB f = 1960 MHz - 3.5 - dB f = 2140 MHz RLin RLout [1] input return loss output return loss - 3.8 - dB f = 940 MHz [2] - −15 - dB f = 1960 MHz [2] - −8 - dB f = 2140 MHz [2] - −8 - dB f = 940 MHz [2] - −11 - dB f = 1960 MHz [2] - −19 - dB f = 2140 MHz [2] - −22 - dB Operation outside this range is possible but not guaranteed. [2] Defined at Pi(RF) = −40 dBm; small signal conditions. [3] PL= 17 dBm per tone; spacing = 1 MHz. 9. Scattering parameters Table 8. Scattering parameters at 5 V, MMIC only VCC = 5 V; ICC = 180 mA; Tcase = 25 °C. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) 400 0.92 178 8.03 93 0.01 49 0.76 −176 500 0.92 176 6.55 89 0.01 53 0.75 −178 600 0.92 173 5.55 85 0.02 55 0.75 179 700 0.92 171 4.80 82 0.02 56 0.75 177 800 0.92 168 4.24 79 0.02 56 0.75 175 900 0.92 165 3.80 76 0.02 56 0.75 173 1000 0.92 162 3.46 72 0.03 55 0.76 170 1100 0.92 160 3.14 69 0.03 54 0.76 167 1200 0.92 157 2.85 66 0.03 53 0.76 165 1300 0.92 154 2.61 63 0.03 52 0.76 163 1400 0.93 152 2.39 61 0.03 50 0.77 161 1500 0.93 150 2.20 58 0.03 49 0.78 160 1600 0.93 149 2.03 56 0.04 48 0.78 159 1700 0.93 148 1.88 54 0.04 47 0.79 157 1800 0.94 147 1.75 63 0.04 47 0.80 157 1900 0.94 146 1.64 51 0.04 46 0.80 157 2000 0.94 146 1.53 50 0.04 46 0.80 157 BGA7027 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 4 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 8. Scattering parameters at 5 V, MMIC only …continued VCC = 5 V; ICC = 180 mA; Tcase = 25 °C. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) 2100 0.93 146 1.45 49 0.04 46 0.81 157 2200 0.93 147 1.39 49 0.05 46 0.81 157 2300 0.93 147 1.33 48 0.05 45 0.81 158 2400 0.92 147 1.29 48 0.05 45 0.80 159 2500 0.91 147 1.26 47 0.05 45 0.80 160 2600 0.91 148 1.24 46 0.06 45 0.80 160 2700 0.89 147 1.23 45 0.06 44 0.79 161 10. Reliability information Table 9. Reliability Life test Conditions Intrinsic failure rate HTOL according to JESD85; confidence level 60 %; Tj = 55 °C; 4 activation energy = 0.7 eV; acceleration factor determined according to the Arrhenius equation 11. Moisture sensitivity Table 10. BGA7027 Preliminary data sheet Moisture sensitivity level Test methodology Class JESD-22-A113 1 All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 5 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 12. Application information 12.1 920 MHz to 960 MHz C8 R1 VCC C7 C9 L2 L1 C10 50 Ω MSL1 C1 MSL2 MSL3 C2 MSL4 C3 MSL5 VCC(RF) RF_IN MSL6 MSL7 C4 BGA7027 MSL8 C6 MSL9 50 Ω C5 001aam066 See Table 11 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm. Fig 2. 5 V application schematic; 920 MHz to 960 MHz 001aam130 32 PL(1dB) (dBm) (3) 30 (1) Gp (dB) 24 (2) 28 22 26 20 24 18 22 0.92 0.93 0.94 0.95 001aam131 26 (1) (2) (3) 16 0.92 0.96 0.93 f (GHz) (1) Tcase = 25 °C. (2) Tcase = 85 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. (3) Tcase = −40 °C. Output power at 1 dB gain compression as a function of frequency BGA7027 Preliminary data sheet 0.95 0.96 f (GHz) (1) Tcase = 25 °C. Fig 3. 0.94 Fig 4. Power gain as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 6 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam132 0 001aam133 46 IP3O (dBm) RLin, RLout, ISL (dB) 44 (1) (2) (3) (2) −10 42 (1) 40 −20 (3) 38 −30 0.92 0.93 0.94 0.95 36 0.92 0.96 0.93 0.94 0.95 f (GHz) Tcase = 25 °C. PL = 17 dBm; tone spacing = 1 MHz (1) RLin. (1) Tcase = 25 °C. (2) RLout. (2) Tcase = 85 °C. (3) ISL. (3) Tcase = −40 °C. Fig 5. 0.96 f (GHz) Input return loss, output return loss and isolation as a function of frequency Fig 6. Output third-order intercept point as a function of frequency GND GND VCC GND GND GND J3 C9 R1 C8 J1 L2 MSL1 C10 MSL3 MSL2 MSL4 C2 C3 C1 J2 C7 MSL5 L1 MSL6 MSL7 MSL8 C5 C4 RF in C6 MSL9 RF out 001aam068 See Table 11 for a list of components. Fig 7. 5 V application reference board; 920 MHz to 960 MHz BGA7027 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 7 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 11. List of components of 920 MHz to 960 MHz, 5 V application See Figure 2 and Figure 7 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1, C6 capacitor 68 pF DC blocking Murata, GRM1885C1H680JA01D C2 capacitor 5.6 pF input match Murata, GRM1885C1H5R6CZ01D C3 capacitor 2.7 pF input match Murata, GRM1885C1H2R7CZ01D C4 capacitor 1.0 pF output match Murata, GRM1885C1H1R0CZ01D C5 capacitor 3.9 pF output match Murata, GRM1885C1H3R9CZ01D C7 capacitor 68 pF RF decoupling Murata, GRM1885C1H680JA01D C8 capacitor 100 nF LF decoupling AVX, 0603YC104KAT2A C9 capacitor 10 μF LF decoupling AVX, 1206ZG106ZAT2A C10 capacitor 68 nF IMD3 suppression Murata, GRM1888R71H683KA93D J1, J2 RF connector SMA J3 DC connector 6 pins L1 inductor 22 nH DC Feed Tyco Electronics, 36501J022JTDG L2[1] inductor 33 nH IMD3 suppression Tyco Electronics, 36501J033JTDG MSL1[2] micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match MSL2[2] micro stripline 1.14 mm × 0.8 mm × 4.3 mm input match MSL3[2] micro stripline 1.14 mm × 0.8 mm × 1.7 mm input match MSL4[2] micro stripline 1.14 mm × 0.8 mm × 4.8mm input match MSL5[2] micro stripline 1.14 mm × 0.8 mm × 2.7 mm output match MSL6[2] micro stripline 1.14 mm × 0.8 mm × 3.2 mm output match MSL7[2] micro stripline 1.14 mm × 0.8 mm × 4.0 mm output match MSL8[2] micro stripline 1.14 mm × 0.8 mm × 1.6 mm output match MSL9[2] micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match R1 resistor 0Ω Emerson Network Power, 142-0701-841 MOLEX Multicomp, MC 0.063W 0603 0R [1] Low Q inductor. [2] MSL1 to MSL9 dimensions are specified as Width (W), Spacing (S) and Length (L). BGA7027 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 8 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 12.2 1930 MHz to 1990 MHz C6 R1 VCC C5 C7 L1 50 Ω MSL1 C1 MSL2 MSL3 C8 C2 MSL4 VCC(RF) RF_IN MSL5 MSL6 C4 MSL7 50 Ω C3 BGA7027 L2 001aam069 See Table 12 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm. Fig 8. 5 V application schematic; 1930 MHz to 1990 MHz 001aam134 32 PL(1dB) (dBm) 001aam135 18 Gp (dB) 30 16 (3) 28 14 (1) (2) 26 (1) (2) (3) 12 24 10 22 1.93 1.95 1.97 1.99 8 1.93 1.95 f (GHz) (1) Tcase = 25 °C. (2) Tcase = 85 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. (3) Tcase = −40 °C. Output power at 1 dB gain compression as a function of frequency BGA7027 Preliminary data sheet 1.99 f (GHz) (1) Tcase = 25 °C. Fig 9. 1.97 Fig 10. Power gain as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 9 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam136 0 001aam137 46 (1) (2) (3) IP3O (dBm) RLin, RLout, ISL (dB) (1) 44 −10 (2) 42 (3) 40 −20 38 −30 1.93 1.95 1.97 36 1.93 1.99 1.95 1.97 f (GHz) 1.99 f (GHz) Tcase = 25 °C. PL = 17 dBm; tone spacing = 1 MHz (1) RLin. (1) Tcase = 25 °C. (2) RLout. (2) Tcase = 85 °C. (3) ISL. (3) Tcase = −40 °C. Fig 11. Input return loss, output return loss and isolation as a function of frequency Fig 12. Output third-order intercept point as a function of frequency GND GND VCC GND GND GND J3 C7 R1 C6 J1 L2 C8 MSL1 C1 J2 C5 MSL2 MSL3 C2 MSL4 L1 MSL5 MSL6 C3 RF in C4 MSL7 RF out 001aam072 See Table 12 for a list of components. Fig 13. 5 V application reference board; 1930 MHz to 1990 MHz BGA7027 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 10 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 12. List of components of 1930 MHz to 1990 MHz, 5 V application See Figure 8 and Figure 13 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1, C4 capacitor 15 pF DC blocking Murata, GRM1885C1H150JA01D C2 capacitor 2.4 pF input match Murata, GRM1885C1H2R4CZ01D C3 capacitor 2.0 pF output match Murata, GRM1885C1H2R0CZ01D C5 capacitor 15 pF RF decoupling Murata, GRM1885C1H150JA01D C6 capacitor 100 nF LF decoupling AVX, 0603YC104KAT2A C7 capacitor 10 μF LF decoupling AVX, 1206ZG106ZAT2A C8 capacitor 68 nF IMD3 suppression Murata, GRM1888R71H683KA93D J1, J2 RF connector SMA Emerson Network Power, 142-0701-841 J3 DC connector 6 pins MOLEX L1 inductor 22 nH DC Feed Tyco Electronics, 36501J022JTDG L2[1] inductor 33 nH IMD3 suppression Tyco Electronics, 36501J033JTDG MSL1[2] micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match MSL2[2] micro stripline 1.14 mm × 0.8 mm × 10.6 mm input match MSL3[2] micro stripline 1.14 mm × 0.8 mm × 1.0 mm input match MSL4[2] micro stripline 1.14 mm × 0.8 mm × 2.7 mm output match MSL5[2] micro stripline 1.14 mm × 0.8 mm × 2.0 mm output match MSL6[2] micro stripline 1.14 mm × 0.8 mm × 6.8 mm output match MSL7[2] micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match R1 resistor 0Ω Multicomp. MC 0.063W 0603 0R [1] Low Q inductor. [2] MSL1 to MSL7 dimensions are specified as Width (W), Spacing (S) and Length (L). 12.3 2110 MHz to 2170 MHz C6 R1 VCC C5 C7 L1 50 Ω MSL1 C1 MSL2 C8 VCC(RF) RF_IN C2 MSL3 BGA7027 MSL4 C4 MSL5 50 Ω C3 L2 001aam070 See Table 13 for a list of components. PCB board specification: Rogers RO4003C; Height = 0.508 mm; εr = 3.38; Copper thickness = 35 μm. Fig 14. 5 V application schematic; 2110 MHz to 2170 MHz BGA7027 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 11 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 001aam138 32 PL(1dB) (dBm) 001aam139 18 Gp (dB) 30 16 (3) 28 14 (1) (2) 26 12 24 10 22 2.11 2.13 2.15 2.17 (1) (2) (3) 8 2.11 2.13 2.15 f (GHz) (1) Tcase = 25 °C. (1) Tcase = 25 °C. (2) Tcase = 85 °C. (2) Tcase = 85 °C. (3) Tcase = −40 °C. (3) Tcase = −40 °C. Fig 15. Output power at 1 dB gain compression as a function of frequency 001aam140 0 Fig 16. Power gain as a function of frequency 001aam141 46 (1) (2) (3) IP3O (dBm) RLin, RLout, ISL (dB) 2.17 f (GHz) (1) 44 −10 42 (2) (3) 40 −20 38 −30 2.11 2.13 2.15 2.17 36 2.11 2.13 f (GHz) Tcase = 25 °C. PL = 17 dBm; tone spacing = 1 MHz (1) Tcase = 25 °C. (2) RLout. (2) Tcase = 85 °C. (3) ISL. (3) Tcase = −40 °C. Fig 17. Input return loss, output return loss and isolation as a function of frequency Preliminary data sheet 2.17 f (GHz) (1) RLin. BGA7027 2.15 Fig 18. Output third-order intercept point as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 12 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier GND GND VCC GND GND GND J3 C7 R1 C6 J1 J2 L2 C5 C8 L1 MSL1 C1 MSL4 MSL2 C4 MSL5 C3 C2 MSL3 RF in RF out 001aam071 See Table 13 for a list of components. Fig 19. 5 V application reference board; 2110 MHz to 2170 MHz BGA7027 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 13 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Table 13. List of components of 2110 MHz to 2170 MHz, 5 V application See Figure 14 and Figure 19 for component layout. Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35 μm. Component Description Value Function Remarks C1, C4 capacitor 15 pF DC blocking Murata, GRM1885C1H150JA01D C2 capacitor 2.2 pF input match Murata, GRM1885C1H2R2CZ01D C3 capacitor 2.0 pF output match Murata, GRM1885C1H1R0CZ01D C5 capacitor 15 pF RF decoupling Murata, GRM1885C1H150JA01D C6 capacitor 100 nF LF decoupling AVX, 0603YC104KAT2A C7 capacitor 10 μF LF decoupling AVX, 1206ZG106ZAT2A C8 capacitor 68 nF IMD3 suppression Murata, GRM1888R71H683KA92D J1, J2 RF connector SMA Emerson Network Power, 142-0701-841 J3 DC connector 6 pins MOLEX L1 inductor 22 nH DC Feed Tyco Electronics, 36501J022JTDG L2[1] inductor 33 nH IMD3 suppression Tyco Electronics, 36501J033JTDG MSL1[2] micro stripline 1.14 mm × 0.8 mm × 10.95 mm input match MSL2[2] micro stripline 1.14 mm × 0.8 mm × 11.3 mm input match MSL3[2] micro stripline 1.14 mm × 0.8 mm × 3.2 mm output match MSL4[2] micro stripline 1.14 mm × 0.8 mm × 8.0 mm output match MSL5[2] micro stripline 1.14 mm × 0.8 mm × 10.95 mm output match R1 resistor 0Ω Multicomp, MC 0.063W 0603 0R [1] Low Q inductor. [2] MSL1 to MSL5 dimensions are specified as Width (W), Spacing (S) and Length (L). 12.4 PCB stack through via 35 μm (1 oz.) copper + 0.3 μm gold plating RF & analog routing RO4003C, 0.51 mm (20 mil) 35 μm (1 oz.) copper RF & analog ground (1) 0.2 mm (8 mil) 35 μm (1 oz.) copper analog routing FR4, 0.15 mm (6 mil) 35 μm (1 oz.) copper RF & analog ground 014aab045 RO4003C dielectric constant εr = 3.38. Fig 20. PCB stack BGA7027 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 14 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 13. Package outline Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M B bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 OUTLINE VERSION e 3.0 e1 HE Lp w 1.5 4.25 3.75 1.2 0.8 0.13 REFERENCES IEC SOT89 JEDEC JEITA TO-243 SC-62 EUROPEAN PROJECTION ISSUE DATE 06-03-16 06-08-29 Fig 21. Package outline SOT89 BGA7027 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 15 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 14. Abbreviations Table 14. Abbreviations Acronym Description CPE Customer-Premises Equipment ESD ElectroStatic Discharge HTOL High Temperature Operating Life ISM Industrial, Scientific and Medical MMIC Monolithic Microwave Integrated Circuit RFID Radio Frequency IDentification TX Transmit W-LAN Wireless Local Area Network 15. Revision history Table 15. Revision history Document ID Release date Data sheet status Change notice Supersedes BGA7027 v.1 20100811 Preliminary data sheet - - BGA7027 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 16 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 16.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BGA7027 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 17 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BGA7027 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 August 2010 © NXP B.V. 2010. All rights reserved. 18 of 19 BGA7027 NXP Semiconductors 400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier 18. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 15 16 16.1 16.2 16.3 16.4 17 18 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3 Dynamic characteristics . . . . . . . . . . . . . . . . . . 3 Scattering parameters . . . . . . . . . . . . . . . . . . . . 4 Reliability information . . . . . . . . . . . . . . . . . . . . 5 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 6 920 MHz to 960 MHz . . . . . . . . . . . . . . . . . . . . 6 1930 MHz to 1990 MHz . . . . . . . . . . . . . . . . . . 9 2110 MHz to 2170 MHz . . . . . . . . . . . . . . . . . 11 PCB stack . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 August 2010 Document identifier: BGA7027