NTND31211PZ D

NTND31211PZ
Small Signal MOSFET
−20 V, −127 mA, Dual P−Channel,
0.65 mm x 0.90 mm x 0.4 mm XLLGA6
Package
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Features
• Dual P−Channel MOSFET
• Offers a Low RDS(ON) Solution in the Ultra Small
•
V(BR)DSS
0.65 mm × 0.90 mm Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
RDS(ON) MAX
ID Max
5.0 W @ −4.5 V
6.0 W @ −2.5 V
−20 V
−127 mA
7.0 W @ −1.8 V
10.0 W @ −1.5 V
Applications
•
•
•
•
P−Channel MOSFET
Small Signal Load Switch
Analog Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Products
S1
S2
G1
G2
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Symbol
Value
Unit
VDSS
−20
V
VGS
±8
V
ID
−127
mA
Steady
State
TA = 25°C
TA = 85°C
−91
t≤5s
TA = 25°C
−146
Steady
State
TA = 25°C
PD
D2
XLLGA6
Case 713AC
mW
125
PINOUT DIAGRAM
t≤5s
Pulsed Drain Current
D1
166
tp = 10 ms
IDM
−488
mA
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
−200
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
6
D1
5
G2
4
S2
S1
1
G1
2
D2
3
(Bottom View)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
MARKING DIAGRAM
KM
1
K
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 0
1
Publication Order Number:
NTND31211PZ/D
NTND31211PZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambient (Note 3)
Steady State
t≤5s
Max
Unit
°C/W
RqJA
998
751
3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = −5 V
TJ = 25°C
−50
nA
TJ = 85°C
−200
nA
VGS = 0 V,
VDS = −16 V
TJ = 25°C
−100
IGSS
VDS = 0 V, VGS = ±5.0 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
Drain-to-Source On Resistance
RDS(ON)
VGS = −4.5 V, ID = −100 mA
Gate-to-Source Leakage Current
V
±100
nA
−1.0
V
2.1
5.0
W
VGS = −2.5 V, ID = −50 mA
2.7
6.0
VGS = −1.8 V, ID = −20 mA
3.4
7.0
VGS = −1.5 V, ID = −10 mA
4.2
10.0
ON CHARACTERISTICS
−0.4
Forward Transconductance
gFS
VDS = −5.0 V, ID = −125 mA
0.35
Forward Diode Voltage
VSD
VGS = 0 V, IS = −10 mA
−0.6
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = −15 V
12.8
Output Capacitance
COSS
2.8
Reverse Transfer Capacitance
CRSS
2.0
S
−1.0
V
CAPACITANCES
pF
SWITCHING CHARACTERISTICS, VGS = 4.5 V
Turn-On Delay Time
Rise Time
td(ON)
tr
Turn-Off Delay Time
Fall Time
VGS = −4.5 V, VDD = −15 V,
ID = −200 mA, RG = 2.0 W
37
ns
71
td(OFF)
280
tf
171
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
NTND31211PZTAG
Package
Shipping†
XLLGA6
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTND31211PZ
TYPICAL CHARACTERISTICS
0.25
0.25
VGS = −2 V to −5 V
VDS = −5 V
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
−1.8 V
0.20
−1.6 V
0.15
−1.4 V
0.10
−1.2 V
0.05
0.20
0.15
0.10
TJ = 25°C
0.05
TJ = −55°C
1
2
3
4
0
5
1.0
1.5
2.0
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.0
TJ = 25°C
ID = −0.12 A
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.0
0.5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.0
TJ = 25°C
VGS = −1.5 V
4.5
4.0
VGS = −1.8 V
3.5
3.0
VGS = −2.5 V
2.5
VGS = −4.5 V
2.0
1.5
0.01 0.02 0.03 0.04 0.05
0.06 0.07 0.08 0.09 0.10
−VGS, GATE−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
1.6
1.5
1.4
TJ = 150°C
VGS = −4.5 V
ID = −0.1 A
−IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
TJ = 125°C
0
0
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
TJ = 125°C
100
TJ = 85°C
10
1
0.1
TJ = 25°C
0.01
−25
0
25
50
75
100
125
150
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTND31211PZ
TYPICAL CHARACTERISTICS
1000
25
VGS = 0 V
TJ = 25°C
f = 1 MHz
C, CAPACITANCE (pF)
20
VGS = −4.5 V
VDS = −15 V
ID = −0.2 A
td(off)
t, TIME (ns)
CISS
15
10
tf
100
tr
td(on)
COSS
5
CRSS
10
0
0
5
10
15
1
20
RG, GATE RESISTANCE (W)
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
1
VGS ≤ −4.5 V
Single Pulse
TC = 25°C
VGS = 0 V
−ID, DRAIN CURRENT (A)
0.009
0.008
0.007
TJ = 125°C
0.006
0.005
TJ = 25°C
0.004
10 ms
0.1
100 ms
1 ms
10 ms
0.01
TJ = −55°C
0.002
RqWJA(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (°C/W)
1000
0.4
0.5
0.6
0.7
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.003
0.3
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.010
−IS, SOURCE CURRENT (A)
10
0.001
0.8
0.9
1.0
0.1
1
10
100
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
Duty Cycle = 0.5
0.2
0.1
100
0.05
0.02
10
0.01
Single Pulse
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 11. Thermal Response
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4
1
10
100
1000
NTND31211PZ
PACKAGE DIMENSIONS
XLLGA6 0.90x0.65
CASE 713AC
ISSUE O
PIN ONE
REFERENCE
0.05 C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994 .
2. CONTROLLING DIMENSION: MILLIMETERS.
3. POSITIONAL TOERANCE APPLIES TO ALL
SIX LEADS.
A B
D
ÇÇ
ÇÇ
E
DIM
A
A1
b
b2
D
E
e
e1
e2
e3
e4
L
L2
0.05 C
2X
TOP VIEW
0.05 C
A
0.05 C
A1
SIDE VIEW
C
SEATING
PLANE
e1
e
e2
1
2
3
RECOMMENDED
SOLDERING FOOTPRINT*
e4
4X
L2
0.345
PITCH
e3
2X
6
L
2X
MILLIMETERS
MIN
MAX
0.340 0.440
0.000 0.050
0.200 0.300
0.080 0.180
0.900 BSC
0.650 BSC
0.295 BSC
0.340 BSC
0.300 BSC
0.208 BSC
0.158 BSC
0.215 0.315
0.115 0.215
5
4
4X
b
BOTTOM VIEW
b2
0.10
M
C A B
0.05
M
C
2X
0.300
PITCH
4X
0.300
0.300
NOTE 3
0.781
2X
0.400
1
4X
0.180
0.340
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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NTND31211PZ/D