NTND31225CZ D

NTND31225CZ
Small Signal MOSFET
20 V, Complementary 0.65 mm x 0.90 mm
x 0.4 mm XLLGA6 Package
Features
• Advanced Trench Complementary MOSFET
• Offers a Low RDS(ON) Solution in the Ultra Small
•
www.onsemi.com
0.65 mm × 0.90 mm Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•
•
•
•
V(BR)DSS
RDS(ON) MAX
ID Max
1.5 W @ 4.5 V
2.0 W @ 2.5 V
N−Channel
20 V
220 mA
3.0 W @ 1.8 V
4.5 W @ 1.5 V
Small Signal Load Switch with Level Shift
Analog Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Products
5.0 W @ −4.5 V
6.0 W @ −2.5 V
P−Channel
−20 V
−127 mA
7.0 W @ −1.8 V
10.0 W @ −1.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Drain-to-Source Voltage
NMOS
Gate-to-Source Voltage
NMOS
Symbol
Value
Unit
VDSS
20
V
PMOS
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
158
t≤5s
TA = 25°C
253
Steady
State
TA = 25°C
TA = 85°C
−91
t≤5s
TA = 25°C
−146
TA = 25°C
NMOS
G2
V
±8
ID
ID
PD
t≤5s
Pulsed Drain Current
G1
±8
Steady
State
Steady
State
mA
220
S1
NMOS
−127
MARKING DIAGRAM
LM
mW
125
IDM
PMOS
Source Current (Body Diode)
XLLGA6
Case 713AC
mA
846
PINOUT DIAGRAM
mA
200
6
−200
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
1
= Specific Device Code
= Date Code
L
M
−488
IS
D2
PMOS
mA
166
tp = 10 ms
S2
−20
VGSS
PMOS
N−Channel
Continuous Drain
Current (Note 1)
DEVICE SYMBOL
D1
TJ,
TSTG
−55 to
150
°C
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
D1
5
G2
4
S2
S1
1
G1
2
D2
3
(Bottom View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 0
1
Publication Order Number:
NTND31225CZ/D
NTND31225CZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambient (Note 2)
Steady State
t≤5s
Max
Unit
°C/W
RqJA
998
751
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq), 1 oz copper
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
FET
Test Condition
Min
Typ
Max
V(BR)DSS
N
VGS = 0 V, ID = 250 mA
20
P
VGS = 0 V, ID = −250 mA
−20
N
VGS = 0 V,
VDS = 5 V
TJ = 25°C
50
TJ = 85°C
200
VGS = 0 V,
VDS = 16 V
TJ = 25°C
100
VGS = 0 V,
VDS = −5 V
TJ = 25°C
−50
TJ = 85°C
−200
VGS = 0 V,
VDS = −16 V
TJ = 25°C
−100
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
P
Gate-to-Source Leakage Current
IGSS
V
N
VGS = 0 V, VDS = ±5 V
±100
P
VGS = 0 V, VDS = ±5 V
±100
N
VGS = VDS, ID = 250 mA
0.4
1.0
P
VGS = VDS, ID = −250 mA
−0.4
−1.0
N
VGS = 4.5 V, ID = 100 mA
0.8
1.5
VGS = 2.5 V, ID = 50 mA
1.1
2.0
VGS = 1.8 V, ID = 20 mA
1.4
3.0
VGS = 1.5 V, ID = 10 mA
1.8
4.5
VGS = −4.5 V, ID = −100 mA
2.1
5.0
VGS = −2.5 V, ID = −50 mA
2.7
6.0
VGS = −1.8 V, ID = −20 mA
3.6
7.0
VGS = −1.5 V, ID = −10 mA
4.2
10.0
N
VDS = 5 V, ID = 125 mA
0.48
P
VDS = −5 V, ID = −125 mA
0.35
nA
nA
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-Source On Resistance
VGS(TH)
RDS(ON)
P
Forward Transconductance
Forward Diode Voltage
gFS
VSD
V
W
S
N
VGS = 0 V, IS = 10 mA
0.6
1.0
P
VGS = 0 V, IS = −10 mA
−0.6
−1.0
V
3. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NTND31225CZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
FET
Test Condition
Min
Typ
Input Capacitance
CISS
N
12.3
Output Capacitance
COSS
VGS = 0 V, f = 1 MHz,
VDS = 15 V
Reverse Capacitance
CRSS
Input Capacitance
CISS
12.8
Output Capacitance
COSS
VGS = 0 V, f = 1 MHz,
VDS = −15 V
Reverse Capacitance
CRSS
Max
Unit
CAPACITANCES
pF
3.4
2.5
P
2.8
2.0
SWITCHING CHARACTERISTICS, VGS = 4.5 V
Turn-On Delay Time
Rise Time
td(ON)
N
VGS = 4.5 V, VDS = 15 V,
ID = 200 mA, RG = 2 W
tr
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
142
tf
80
td(ON)
P
VGS = −4.5 V, VDS = −15 V,
ID = −200 mA, RG = 2 W
Fall Time
ns
25.5
td(OFF)
tr
Turn-Off Delay Time
16.5
37
71
td(OFF)
280
tf
171
3. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
NTND31225CZTAG
Package
Shipping†
XLLGA6
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
3
NTND31225CZ
TYPICAL CHARACTERISTICS − P−CHANNEL
0.25
0.25
VGS = −2 V to −5 V
VDS = −5 V
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
−1.8 V
0.20
−1.6 V
0.15
−1.4 V
0.10
−1.2 V
0.05
0.20
0.15
0.10
TJ = 25°C
0.05
TJ = −55°C
1
2
3
4
0
5
1.0
1.5
2.0
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.0
TJ = 25°C
ID = −0.12 A
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.0
0.5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.0
TJ = 25°C
VGS = −1.5 V
4.5
4.0
VGS = −1.8 V
3.5
3.0
VGS = −2.5 V
2.5
VGS = −4.5 V
2.0
1.5
0.01 0.02 0.03 0.04 0.05
0.06 0.07 0.08 0.09 0.10
−VGS, GATE−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
1.6
1.5
1.4
TJ = 150°C
VGS = −4.5 V
ID = −0.1 A
−IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
TJ = 125°C
0
0
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
TJ = 125°C
100
TJ = 85°C
10
1
0.1
TJ = 25°C
0.01
−25
0
25
50
75
100
125
150
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
4
20
NTND31225CZ
TYPICAL CHARACTERISTICS − P−CHANNEL
1000
25
VGS = 0 V
TJ = 25°C
f = 1 MHz
C, CAPACITANCE (pF)
20
VGS = −4.5 V
VDS = −15 V
ID = −0.2 A
td(off)
t, TIME (ns)
CISS
15
10
tf
100
tr
td(on)
COSS
5
CRSS
10
0
0
5
10
15
1
20
RG, GATE RESISTANCE (W)
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
1
VGS ≤ −4.5 V
Single Pulse
TC = 25°C
VGS = 0 V
−ID, DRAIN CURRENT (A)
0.009
0.008
0.007
TJ = 125°C
0.006
0.005
TJ = 25°C
0.004
10 ms
0.1
100 ms
1 ms
10 ms
0.01
TJ = −55°C
0.002
RqWJA(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (°C/W)
1000
0.4
0.5
0.6
0.7
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.003
0.3
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.010
−IS, SOURCE CURRENT (A)
10
0.001
0.8
0.9
1.0
0.1
1
10
100
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
Duty Cycle = 0.5
0.2
0.1
100
0.05
0.02
10
0.01
Single Pulse
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 11. Thermal Response
www.onsemi.com
5
1
10
100
1000
NTND31225CZ
TYPICAL CHARACTERISTICS − N−CHANNEL
0.4
0.4
VDS = 5 V
VGS = 1.6 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
5 V to
1.8 V
0.3
1.4 V
0.2
1.2 V
0.1
0.3
0.2
TJ = −55°C
0.1
TJ = 25°C
TJ = 125°C
TJ = 25°C
0.0
0.0
1.0
2.0
3.0
4.0
0.0
5.0
0
1.6
Figure 13. Transfer Characteristics
2
5.0
TJ = 25°C
ID = 0.22 A
4.0
3.0
2.0
1.0
TJ = 25°C
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
1.2
Figure 12. On−Region Characteristics
1.0
2.0
3.0
4.0
VGS = 1.5 V
4.0
3.0
VGS = 1.8 V
2.0
VGS = 2.5 V
1.0
VGS = 4.5 V
0
0.1
0.0
5.0
0.2
0.3
0.4
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 14. On−Resistance vs. Gate−to−Source
Voltage
Figure 15. On−Resistance vs. Drain Current
and Gate Voltage
1.8
1000.00
VGS = 4.5 V
ID = 0.10 A
TJ = 150°C
100.00
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (Normalized)
0.8
VGS, GATE−TO−SOURCE VOLTAGE (V)
5.0
1.6
0.4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1.4
1.2
1.0
TJ = 125°C
10.00
TJ = 85°C
1.00
TJ = 25°C
0.10
0.8
0.6
VGS = 0 V
0.01
−50
−25
0
25
50
75
100
125
150
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 16. On−Resistance Variation with
Temperature
Figure 17. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
6
20
NTND31225CZ
TYPICAL CHARACTERISTICS − N−CHANNEL
VDS = 10 V
ID = 0.2 A, VGS = 4.5 V
TJ = 25°C
VGS = 0 V
f = 1 MHz
td(off)
100
tf
t, TIME (ns)
C, CAPACITANCE (pF)
100
Ciss
10
tr
Coss
Crss
td(on)
10
1
0
5
10
15
1
20
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RG, GATE RESISTANCE (W)
Figure 18. Capacitance Variation
Figure 19. Resistive Switching Time Variation
vs. Gate Resistance
0.20
1
ID, DRAIN CURRENT (A)
IS, SOURCE CURRENT (A)
VGS = 0 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
0.02
0.3
0.4
0.5
0.6
0.7
0.8
0.9
10 ms
0.1
100 ms
1 ms
VGS < 4.5 V
TA = 25°C
Single Pulse Response
0.01
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.001
1.0
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
Figure 21. Maximum Rated Forward Biased
Safe Operating Area
Figure 20. Diode Forward Voltage vs. Current
RqWJA(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (°C/W)
10 ms
1000
50% Duty Cycle
20%
10%
100
5%
2%
10
1%
Single Pulse
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 22. Thermal Response
www.onsemi.com
7
1
10
100
1000
NTND31225CZ
PACKAGE DIMENSIONS
XLLGA6 0.90x0.65
CASE 713AC
ISSUE O
PIN ONE
REFERENCE
0.05 C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994 .
2. CONTROLLING DIMENSION: MILLIMETERS.
3. POSITIONAL TOERANCE APPLIES TO ALL
SIX LEADS.
A B
D
ÇÇ
ÇÇ
E
DIM
A
A1
b
b2
D
E
e
e1
e2
e3
e4
L
L2
0.05 C
2X
TOP VIEW
0.05 C
A
0.05 C
A1
SIDE VIEW
C
SEATING
PLANE
e1
e
e2
1
2
3
RECOMMENDED
SOLDERING FOOTPRINT*
e4
4X
L2
0.345
PITCH
e3
2X
6
L
2X
MILLIMETERS
MIN
MAX
0.340 0.440
0.000 0.050
0.200 0.300
0.080 0.180
0.900 BSC
0.650 BSC
0.295 BSC
0.340 BSC
0.300 BSC
0.208 BSC
0.158 BSC
0.215 0.315
0.115 0.215
5
4
4X
b
BOTTOM VIEW
b2
0.10
M
C A B
0.05
M
C
2X
0.300
PITCH
4X
0.300
0.300
NOTE 3
0.781
2X
0.400
1
4X
0.180
0.340
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
8
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTND31225CZ/D