NHPV08S600G, NHPJ08S600G Switch Mode Power Rectifiers Features • • • • • • • http://onsemi.com Ultrafast 30 Nanosecond Recovery Time 150°C Operating Junction Temperature High Voltage Capability of 600 V Low Forward Drop Low Leakage Specified @ 125°C Case Temperature These Devices are Pb−Free and RoHS Compliant NHPJ08S600G is a Halogen Free/BFR Free Device PLANAR ULTRAFAST RECTIFIERS 8 A, 600 V 1 4 3 Mechanical Characteristics: 3 • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • 1 4 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 1 1 3 TO−220AC CASE 221B 3 TO−220 FULLPAK CASE 221AG MARKING DIAGRAMS AY WW HPV8S600G KA A Y WW G KA AYWW HPJ8S600G KA = = = = = Assembly Location Year Work Week Pb−Free Package Diode Polarity ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 April, 2014 − Rev. 3 1 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: NHPV08S600/D NHPV08S600G, NHPJ08S600G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR) TO−220AC TO−220FP IF(AV) 8 A @ TC = 130°C 8 A @ TC = 95°C A Peak Rectified Forward Current (Rated VR, Square Wave, 20 kHz) TO−220AC TO−220FP IFRM 8 A @ TC = 125°C 8 A @ TC = 85°C A IFSM 80 A TJ, Tstg −55 to +150 °C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value NHPV08S600G: Thermal Resistance Junction−to−Case (Note 1) RqJC 1.5 NHPJ08S600G: Thermal Resistance Junction−to−Case (Note 1) RqJC 4.25 Unit °C/W °C/W 1. Junction−to−Case shown as a typical value using a fixed 25°C cold plate boundary. ELECTRICAL CHARACTERISTICS Characteristic Test Conditions Symbol Typ Max Unit Instantaneous Forward Voltage (Note 2) (iF = 8 A, TC = 125°C) (iF = 8 A, TC = 25°C) vF 1.5 2.7 1.8 3.2 V Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C) iR 46 0.1 400 30 mA Reverse Recovery Time (IF = 0.5 A, Irr = 0.25 A, IR = 1 A) (IF = 1 A, dIF/dt = −50 A/ms, VR = 30 V) trr − − 30 50 ns Reverse Recovery Time Peak Reverse Recovery Current Total Reverse Recovery Charge Softness Factor (IF = 8 A, dIF/dt = −200 A/ms, TC = 25°C) trr IRM Qrr S 30 2.3 37 2 50 3 50 − ns A nC − Reverse Recovery Time Peak Reverse Recovery Current Total Reverse Recovery Charge Softness Factor (IF = 8 A, dIF/dt = −200 A/ms, TC = 125°C) trr IRM Qrr S 45 5.5 150 0.35 − − − − ns A nC − Forward Recovery Time Peak Forward Recovery Voltage (IF = 8 A, dIF/dt = 120 A/ms, TC = 25°C) tfr VFP − − 200 6 ns V 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Package Shipping† NHPV08S600G TO−220AC (Pb−Free) 50 Units / Rail NHPJ08S600G TO−220FP (Pb−Free / Halide−Free) 50 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NHPV08S600G, NHPJ08S600G TYPICAL CHARACTERISTICS IR, INSTANTANEOUS REVERSE CURRENT (mA) 1000 TA = 125°C TA = 150°C 10 TA = 25°C 1 TA = 150°C 10 TA = 125°C 1 0.1 TA = 25°C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 0 4.0 3.5 200 300 400 500 600 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Typical Reverse Characteristics C, JUNCTION CAPACITANCE (pF) 100 TJ = 25°C 10 0.1 1 10 100 1000 15 RqJC = 1.5°C/W DC Square Wave 10 5 0 60 80 100 120 140 TC, CASE TEMPERATURE (°C) Figure 3. Typical Junction Capacitance Figure 4. Current Derating TO−220AC IPK/IAV = 20 IPK/IAV = 10 25 IPK/IAV = 5 20 Square Wave 15 DC 10 5 TJ = 150°C 0 2 4 6 8 Trr, REVERSE RECOVERY TIME (ns) VR, REVERSE VOLTAGE (V) 30 0 100 10 35 35 30 30 Trr 25 25 20 20 15 15 10 10 Qrr Vr = 30 V di/dt = 50 A/ms 5 0 0 0 1 2 3 4 5 6 7 IF(AV), AVERAGE FORWARD CURRENT (A) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Forward Power Dissipation Figure 6. Typical Recovery Characteristics http://onsemi.com 3 5 8 Qrr, RECOVERED STORED CHARGE (nC) 0.1 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 100 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 NHPV08S600G, NHPJ08S600G PACKAGE DIMENSIONS TO−220 TWO−LEAD CASE 221B−04 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q F T S DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 0.89 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 TO−220 FULLPAK, 2−LEAD CASE 221AG ISSUE O A B E A P E/2 SEATING PLANE 0.14 M B A M H1 A1 4 Q D C NOTE 3 1 2 3 L L1 3X 3X b2 c b 0.25 M B A M C A2 e e1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. MILLIMETERS DIM MIN MAX A 4.30 4.70 A1 2.50 2.90 A2 2.50 2.70 b 0.54 0.84 b2 1.10 1.40 c 0.49 0.79 D 14.22 15.88 E 9.65 10.67 e 2.54 BSC e1 5.08 BSC H1 5.97 6.48 L 12.70 14.73 L1 --2.80 P 3.00 3.40 Q 2.80 3.20 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NHPV08S600/D