STTA1212D TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 12A VRRM 1200V trr (typ) 50 ns VF (max) 2.0 V K FEATURES AND BENEFITS A K ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY. TO-220AC DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode operations. They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current Value Unit 1200 V 30 A IFRM Repetitive peak forward current tp = 5 µs F = 5kHz square 160 A IFSM Surge non repetitive forward current tp = 10ms sinusoidal 100 A Tstg Storage temperature range - 65 to + 150 °C 150 °C Tj Maximum operating junction temperature TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 5B 1/8 STTA1212D THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Test conditions Value Unit 1.9 °C/W Junction to case thermal resistance Conduction power dissipation IF(AV) = 12A δ =0.5 Tc= 95°C 29.2 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tc= 89°C 32.1 W STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR ** Parameter Forward voltage drop IF =12A Reverse leakage current Vto Threshold voltage Rd Dynamic resistance Test pulses : Test conditions VR =0.8 x VRRM Min Typ Max Unit Tj = 25°C Tj = 125°C 1.35 2.2 2.0 V V Tj = 25°C Tj = 125°C 0.8 100 5.0 µA mA 1.57 V 36 mΩ Max Unit Ip < 3.IF(AV) Tj = 125°C * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr IRM S factor Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Min Tj = 25°C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125°C VR = 600V dIF/dt = -96 A/µs dIF/dt = -500 A/µs Typ ns 50 100 IF =12A A 18 30 Tj = 125°C VR = 600V IF = 12A dIF/dt = -500 A/µs / 1.2 TURN-ON SWITCHING Symbol t fr VFp 2/8 Parameter Forward recovery time Peak forward voltage Test conditions Min Typ Unit ns Tj = 25°C IF =12 A, dIF/dt = 96 A/µs measured at 1.1 × VFmax Tj = 25°C IF =12A, dIF/dt = 96 A/µs IF =40A, dIF/dt = 500 A/µs Max 900 V 30 40 STTA1212D Fig. 1: Conductionlosses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). P1(W) IFM(A) 30 δ = 0.1 δ = 0.2 100.0 δ = 0.5 Tj=125°C 25 δ=1 20 10.0 15 10 1.0 5 IF(av) (A) 0 0 2 4 6 8 VFM(V) 10 12 0.1 0.0 14 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) Zth(j-c)/Rth(j-c) 1.0 50 0.8 40 VR=600V Tj=125°C IF=IF(av) IF=2*IF(av) 30 0.6 δ = 0.5 0.4 0.2 20 δ = 0.2 IF=0.5*IF(av) 10 δ = 0.1 tp(s) Single pulse 0.0 1E-4 1E-3 dIF/dt(A/µs) 1E-2 1E-1 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 0 200 300 400 500 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). S factor trr(ns) 500 450 400 350 300 250 200 150 100 50 0 100 1.40 VR=600V Tj=125°C VR=600V Tj=125°C IF<2*IF(av) IF=2*IF(av) 1.20 IF=IF(av) 1.00 IF=0.5*IF(av) dIF/dt(A/µs) 0 100 200 300 dIF/dt(A/µs) 400 500 0.80 0 100 200 300 400 500 3/8 STTA1212D Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 1.1 70 IF=IF(av) Tj=125°C 60 S factor 1.0 50 40 0.9 30 IRM 20 0.8 10 dIF/dt(A/µs) Tj(°C) 0.7 25 50 0 75 100 125 Fig. 9: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 600 VFR=1.1*VF max. IF=IF(av) Tj=125°C 500 400 300 200 dIF/dt(A/µs) 100 4/8 0 100 200 300 400 500 0 100 200 300 400 500 STTA1212D APPLICATION DATA The 1200V TURBOSWITCH series has been designed to provide the lowest overall power losses in all high frequency or high pulsed current operations. In such applications (Fig A to D),the way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 CONDUCTION LOSSES in the diode REVERSE LOSSES in the diode Watts SWITCHING LOSSES in the diode SWITCHING LOSSES in the tansistor due to the diode Fig. A : ”FREEWHEEL” MODE. SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL VR tp T F = 1/T δ = tp/T LOAD 5/8 STTA1212D Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE. PWM tp T F = 1/T δ = tp/T Fig. D : RECTIFIER DIODE. STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS Conduction losses : I P1 = Vt0 . IF(AV) + Rd . IF2(RMS) IF Reverse losses : Rd P2 = VR . IR . (1 - δ) VR V IR 6/8 V to VF STTA1212D APPLICATION DATA (Cont’d) Fig. F: TURN-OFF CHARACTERISTICS Turn-on losses : (in the transistor, due to the diode) V IL VR × IRM 2 × ( 3 + 2 × S ) × F 6 x dIF ⁄ dt VR × IRM × IL × ( S + 2 ) × F + 2 x dIF ⁄ dt TRANSISTOR I P5 = t I dI F /dt DIODE Turn-off losses (in the diode) : ta tb V t P3 = dI R /dt I RM VR × IRM 2 × S × F 6 x dIF ⁄ dt VR trr = ta + tb I dI F /dt = VR /L S = tb / ta RECTIFIER OPERATION Turn-off losses : (with non negligible serial inductance) ta tb V t IRM dI R /dt VR P3’ = VR × IRM 2 × S × F + 6 x dIF ⁄ dt L × IRM 2 × F 2 P3,P3’ and P5 are suitable for powerMOSFET and IGBT trr = ta + tb S = tb/ta Fig. G: TURN-ON CHARACTERISTICS IF I Fmax dI F /dt 0 t VF Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F V Fp VF 1.1V F 0 tfr t 7/8 STTA1212D PACKAGE DATA TO-220AC (JEDEC outline) DIMENSIONS REF. H2 L5 L7 ØI L6 L2 D L9 F1 L4 M F E G Inches Min. Max. Min. Max. A C 4.40 1.23 4.60 1.32 0.173 0.048 0.181 0.051 D 2.40 2.72 0.094 0.107 E F 0.49 0.61 0.70 0.88 0.019 0.024 0.027 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 L4 16.40 typ. 13.00 14.00 0.645 typ. 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 L7 15.25 6.20 15.75 6.60 0.600 0.244 0.620 0.259 L9 3.50 3.93 0.137 0.154 A C Millimeters M Diam. I 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 Ordering type Marking Package Weight Base qty Delivery mode STTA1212D STTA1212D TO-220AC 1.86g 50 Tube Cooling method: by conduction (C) Recommended torque value: 0.55 N.m. Maximum torque value: 0.70 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8